WO2018212171A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2018212171A1
WO2018212171A1 PCT/JP2018/018738 JP2018018738W WO2018212171A1 WO 2018212171 A1 WO2018212171 A1 WO 2018212171A1 JP 2018018738 W JP2018018738 W JP 2018018738W WO 2018212171 A1 WO2018212171 A1 WO 2018212171A1
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Prior art keywords
protective film
laminated structure
semiconductor chip
test piece
substrate
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PCT/JP2018/018738
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English (en)
French (fr)
Japanese (ja)
Inventor
正憲 山岸
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リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to CN201880031800.6A priority Critical patent/CN110622302B/zh
Priority to JP2018548936A priority patent/JP6438181B1/ja
Priority to KR1020197033559A priority patent/KR102387943B1/ko
Publication of WO2018212171A1 publication Critical patent/WO2018212171A1/ja
Priority to PH12019502541A priority patent/PH12019502541A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Definitions

  • the present invention relates to a semiconductor device and a manufacturing method thereof.
  • This application claims priority on May 17, 2017 based on Japanese Patent Application No. 2017-097994 for which it applied to Japan, and uses the content here.
  • a projecting electrode (hereinafter referred to as eutectic solder, high temperature solder, gold, etc.) is formed as a semiconductor chip on a connection pad portion thereof.
  • eutectic solder high temperature solder, gold, etc.
  • these are referred to as “bumps”, and the bumps are brought into contact with the corresponding terminal portions on the chip mounting substrate by a so-called face-down method so as to be melted / diffused.
  • a flip chip mounting method for bonding is adopted.
  • Bumps are formed on the circuit surface of the semiconductor chip used in this mounting method.
  • a resin film may be formed on the circuit surface (in other words, the bump forming surface) or the back surface opposite to the circuit surface of this semiconductor chip depending on the purpose (see Patent Documents 1 to 3). ).
  • the above-described semiconductor chip can be obtained by dicing a semiconductor wafer having bumps formed on its circuit surface into individual pieces. Then, the surface of the semiconductor wafer opposite to the circuit surface (bump forming surface) may be ground.
  • a curable resin film is applied to the bump forming surface, and this film is cured to form a protective film on the bump forming surface. May form.
  • the back surface opposite to the circuit surface (bump forming surface) of the semiconductor chip may be exposed. Therefore, when a semiconductor wafer with bumps formed on the circuit surface is diced, or when a semiconductor device obtained by dicing is packaged and a semiconductor device is manufactured, cracks are prevented from occurring in the semiconductor chip. Therefore, a resin film made of an organic material may be formed as a protective film on the back surface of the semiconductor chip.
  • Such a semiconductor chip having the above-described protective film as a resin film is widely used in the manufacturing process of a semiconductor device, and is particularly important.
  • a semiconductor chip provided with a protective film is placed under a high temperature condition or a low temperature condition while being bonded to a substrate. And may be exposed to severe temperature conditions. In that case, due to such a change in temperature, the bonding state between the semiconductor chip provided with the protective film and the substrate may be destroyed. Therefore, it is desirable for a semiconductor chip provided with a protective film to be maintained in a stable state with respect to the substrate even under conditions where the temperature change is severe. However, it is not certain whether the semiconductor chips described in Patent Documents 1 to 3 have such stability.
  • an object of the present invention is to provide a semiconductor device in which the bonding of a semiconductor chip provided with a protective film to a substrate is maintained in a stable state even under conditions where the temperature change is severe, and a method for manufacturing the same.
  • a method of manufacturing a semiconductor device At least a first protective film is provided on the first surface of the semiconductor chip having bumps, or a second protective film is provided on the second surface of the semiconductor chip opposite to the first surface.
  • the first protective film is formed such that the upper part of the bump protrudes through the first protective film,
  • the first protective film or the second protective film has a shear strength ratio of 1.05 to 2 when the shear strength ratio and fracture risk factor of the laminated structure are measured by the following method, and the fracture risk factor is A protective film having a characteristic of ⁇ 0.9 to 0.9, A method for manufacturing a semiconductor device.
  • a test piece of the multilayer structure in which the substrate is a copper substrate is manufactured, the copper substrate in the test piece of the multilayer structure is fixed, and a semiconductor chip with a protective film in the test piece of the multilayer structure Then, a force is applied in a direction parallel to the surface of the copper substrate, and the force when the bonding state between the semiconductor chip with a protective film and the copper substrate is broken is applied to the shear strength (N )age, Except that the first protective film and the second protective film are not provided, a comparative test piece having the same structure as the test piece of the laminated structure is produced, and the force is applied in the same manner as the test piece of the laminated structure.
  • a semiconductor device including a laminated structure in which a semiconductor chip with a protective film having a bump is bonded to a substrate via the bump,
  • the semiconductor chip with a protective film includes at least a first protective film on a first surface of the semiconductor chip having bumps, or a second protective film on a second surface of the semiconductor chip opposite to the first surface.
  • the first protective film has a shear strength ratio of 1.05 to 2 when the shear strength ratio and fracture risk factor of the laminated structure are measured by the following method, and the fracture risk factor is
  • a semiconductor device which is a protective film having a characteristic of -0.9 to 0.9.
  • a test piece of the multilayer structure in which the substrate is a copper substrate is manufactured, the copper substrate in the test piece of the multilayer structure is fixed, and a semiconductor chip with a protective film in the test piece of the multilayer structure Then, a force is applied in a direction parallel to the surface of the copper substrate, and the force when the bonding state between the semiconductor chip with a protective film and the copper substrate is broken is applied to the shear strength (N )age, Except that the first protective film and the second protective film are not provided, a comparative test piece having the same structure as the test piece of the laminated structure is produced, and the force is applied in the same manner as the test piece of the laminated structure.
  • a semiconductor device in which the bonding of a semiconductor chip provided with a protective film to a substrate is maintained in a stable state and a method for manufacturing the same even under conditions where temperature change is severe.
  • a semiconductor device manufacturing method includes at least a first protective film on a first surface having bumps of a semiconductor chip, or the first surface of a semiconductor chip.
  • a step of manufacturing a semiconductor chip with a protective film, which is provided with a second protective film on the second surface on the opposite side to (abbreviated as “semiconductor chip with protective film manufacturing step” in this specification);
  • a step of producing a laminated structure in which the semiconductor chip with a protective film is bonded to a substrate via a bump in this specification, it may be abbreviated as a “laminated structure producing step”),
  • the semiconductor chip with a protective film includes the first protective film, the upper part of the bump protrudes through the first protective film.
  • the first protective film or the second protective film has a shear strength ratio of 1.05 to 2 when the shear strength ratio and fracture risk factor of the laminated structure are measured, and the fracture risk factor is ⁇ It is a protective film having a characteristic of 0.9 to 0.9.
  • ⁇ Shear strength ratio of laminated structure> A test piece of the multilayer structure in which the substrate is a copper substrate is manufactured, the copper substrate in the test piece of the multilayer structure is fixed, and a semiconductor chip with a protective film in the test piece of the multilayer structure Then, a force is applied in a direction parallel to the surface of the copper substrate (that is, the upper surface of the copper substrate when the copper substrate is placed on a flat surface), and the semiconductor chip with the protective film and the copper substrate are joined.
  • a laminated structure (also referred to as a comparative test piece) is prepared, and a force is applied in the same manner as the laminated test piece, and the bonding state between the semiconductor chip and the copper substrate of the comparative test piece is destroyed.
  • Force is the comparative shear strength (N) of the comparative laminated structure Occasionally, the value of the shear strength of the laminate structure] / [comparative shear strength of the comparative laminate structures, and shear strength ratio of the laminated structure.
  • the expansion and contraction parameter difference DerutaP1myuemu 2 determined that, then, [the expansion contraction parameter P of the substrate of the test piece] - [substrate, the total value of the expansion and contraction parameters P of all the specimens other than the first protective film and second protective film
  • the value of ⁇ P1 / ⁇ P0 when the expansion / shrinkage reference parameter difference ⁇ P0 ⁇ m 2 that is the value of] is obtained is taken as the risk of fracture of the laminated structure.
  • the stacked structure satisfies both the above-described shear strength ratio and breakage risk factor conditions.
  • the semiconductor device obtained by the manufacturing method of the present invention is not particularly limited as long as it includes the laminated structure.
  • the semiconductor chip with a protective film produced in the process of producing the semiconductor chip with a protective film in the manufacturing method includes one or both of the first protective film and the second protective film. That is, the semiconductor chip with a protective film includes a first protective film and may not include a second protective film, or may include a second protective film and may not include a first protective film. Both the first protective film and the second protective film may be provided.
  • the first protective film is a film formed on the first surface (in other words, the circuit surface or bump forming surface of the semiconductor chip) having the bumps of the semiconductor chip, and is a resin film (a curable resin layer described later). .
  • the first protective film protects the bumps and the first surface of the semiconductor chip.
  • the second protective film is a film formed on the second surface opposite to the first surface of the semiconductor chip (in other words, the back surface of the semiconductor chip), and is a resin film (a curable resin layer described later). is there.
  • the second protective film is used when the semiconductor wafer having the bump formed on the circuit surface is diced to produce the semiconductor chip described above or until the semiconductor chip obtained by dicing is packaged to manufacture the semiconductor device. In the meantime, the generation of cracks in the semiconductor chip is prevented.
  • the laminated structure produced by the manufacturing method will be described first.
  • FIG. 1 is a cross-sectional view schematically showing one embodiment of the stacked structure manufactured by the manufacturing method.
  • the drawings used in the following description may show the main parts in an enlarged manner for the sake of convenience, and the dimensional ratios and the like of the respective components are the same as the actual ones. Not necessarily.
  • the laminated structure 1 shown here includes a semiconductor chip 10 with a protective film and a substrate 14.
  • the semiconductor chip 10 with a protective film includes a first protective film 12 on the first surface 11 a of the semiconductor chip 11 and a second protective film 13 on the second surface 11 b of the semiconductor chip 11.
  • the semiconductor chip 11 has a plurality of aligned bumps 111 on its first surface 11a.
  • the first protective film 12 covers the first surface 11a of the semiconductor chip 11 and the region of the surface 111a of the bump 111 on the side close to the first surface 11a of the semiconductor chip 11, and covers these covered regions.
  • the upper portion 1110 of the bump 111 that is, the top portion of the bump 111 far from the first surface 11 a of the semiconductor chip 11 and the vicinity thereof penetrate the first protective film 12 and the surface (exposed surface) of the first protective film 12. ). Then, the surface 14a of the substrate 14 facing the semiconductor chip 10 with the protective film (which may be referred to as “first surface” of the substrate in this specification) 14a, and the above-described protruding portion of the bump 111 (for example, the top portion) ) Are in contact with each other, and the substrate 14 and the semiconductor chip 10 with the protective film are electrically connected. As described above, the laminated structure 1 is configured by bonding the semiconductor chip 10 with the protective film to the substrate 14 via the bumps 111.
  • the shear strength of the laminated structure 1 when the substrate 14 is a copper substrate means that the substrate 14 is fixed and the substrate is fixed to the semiconductor chip 10 with the protective film.
  • a force is applied in a direction parallel to the surface of the substrate 14 (that is, the upper surface of the substrate when the substrate is placed on a flat surface, for example, the first surface 14a), and the semiconductor chip 10 with a protective film and the substrate 14 are This means the force applied to the semiconductor chip 10 with the protective film when the bonded state is broken.
  • the semiconductor chip 11 is preferably included in a region to which the force is applied, for example, the force is applied only to the semiconductor chip 11.
  • FIG. 2 is a cross-sectional view schematically showing an example of a comparative laminated structure according to the manufacturing method.
  • reference numeral 9 is attached to indicate a comparative laminated structure. 2 and subsequent figures, the same components as those shown in FIG. 1 are denoted by the same reference numerals as those in FIG.
  • the comparative shear strength (N) of the comparative multilayer structure 9 is the same as that of the multilayer structure 1, that is, the substrate 14 is fixed and the substrate 14 is fixed to the semiconductor chip 11.
  • a force (N) is applied in a direction parallel to the surface of the substrate (that is, the upper surface of the substrate when the substrate is placed on a flat surface, for example, the first surface 14a), and the semiconductor chip 11 and the substrate 14 are joined. It means the force (N) applied to the semiconductor chip 11 when the state is destroyed.
  • the laminated structure is a value of [shear strength (N) of the laminated structure 1] / [comparative shear strength (N) of the comparative laminated structure 9].
  • the shear strength ratio of the body 1 is 1.05 to 2.
  • the fracture risk factor of the laminated structure 1 will be described.
  • a test piece having a width of 5 mm and a length of 20 mm when viewed from above and viewed in plan is prepared.
  • the thickness of the test piece of each layer is the same as the thickness of each layer in the laminated structure 1.
  • an expansion / contraction parameter P ⁇ m 2 which is a value of [expansion / shrinkage amount ES ( ⁇ m) of test piece] ⁇ [thickness of test piece ( ⁇ m)] is obtained for each test piece.
  • the expansion / contraction parameter difference ⁇ P 1 ⁇ m 2 is expressed as [Expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the substrate 14] ⁇ ([Expansion / contraction parameter of the test piece of the semiconductor chip 11 is calculated by P ( ⁇ m 2)] + [expansion contraction parameter P of the specimen of the first protective film 12 ( ⁇ m 2)] + [expansion contraction parameter P of the test piece of the second protective layer 13 ( ⁇ m 2)]) .
  • expansion / contraction reference parameter difference ⁇ P0 which is a value of More specifically, in the case of the laminated structure 1, the expansion / contraction reference parameter difference ⁇ P 0 ⁇ m 2 is [expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the substrate 14] ⁇ [expansion / contraction parameter of the test piece of the semiconductor chip 11]. P ( ⁇ m 2 )].
  • the risk of fracture of the laminated structure 1, which is a value of ⁇ P1 / ⁇ P0, is ⁇ 0.9 to 0.9.
  • FIG. 3 is a cross-sectional view schematically showing another embodiment of the laminated structure produced by the manufacturing method.
  • the laminated structure 2 shown here is the same as the laminated structure 1 shown in FIG. 1 except that the second protective film 13 is not provided.
  • the laminated structure 2 is configured by bonding a semiconductor chip 20 with a protective film to a substrate 14 through bumps 111 thereof.
  • the laminated structure is a value of [shear strength (N) of the laminated structure 2] / [comparative shear strength (N) of the comparative laminated structure 9].
  • the shear strength ratio of the body 2 is 1.05 to 2.
  • the risk of rupture of the laminated structure 2 that is a value of ⁇ P1 / ⁇ P0 is ⁇ 0.9 to 0.9.
  • the expansion / contraction parameter difference ⁇ P1 ⁇ m 2 is [expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the substrate 14] ⁇ ([expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the semiconductor chip 11]]. + [Expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the first protective film 12])).
  • the expansion / contraction standard parameter difference ⁇ P 0 ⁇ m 2 is the same as in the case of the laminated structure 1 [expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the substrate 14] ⁇ [semiconductor chip 11 It is calculated from the expansion / contraction parameter P ( ⁇ m 2 )] of the test piece.
  • FIG. 4 is a cross-sectional view schematically showing still another embodiment of the laminated structure manufactured by the manufacturing method.
  • the laminated structure 3 shown here is the same as the laminated structure 1 shown in FIG. 1 except that the first protective film 12 is not provided.
  • the laminated structure 3 is configured by bonding a semiconductor chip 30 with a protective film to the substrate 14 via the bumps 111.
  • the laminated structure is a value of [shear strength (N) of the laminated structure 3] / [comparative shear strength (N) of the laminated structure 9 for comparison].
  • the shear strength ratio of the body 3 is 1.05 to 2.
  • the expansion / contraction parameter difference ⁇ P1 ⁇ m 2 is [expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the substrate 14] ⁇ ([expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the semiconductor chip 11]]. + [Expansion / shrinkage parameter P ( ⁇ m 2 ) of the test piece of the second protective film 13])).
  • the expansion / contraction standard parameter difference ⁇ P 0 ⁇ m 2 is the same as in the case of the laminated structure 1 [expansion / contraction parameter P ( ⁇ m 2 ) of the test piece of the substrate 14] ⁇ [semiconductor chip 11 It is calculated from the expansion / contraction parameter P ( ⁇ m 2 )] of the test piece.
  • the laminated structure produced by the manufacturing method is not limited to that shown in FIGS. 1 and 3 to 4, and within the range not impairing the effects of the present invention, the laminated structure shown in FIGS.
  • the configuration of the part may be changed, deleted, or added.
  • the laminated structure may include a layer other than the semiconductor chip 11, the first protective film 12, the second protective film 13, and the substrate 14.
  • the other layers are not particularly limited and can be arbitrarily selected according to the purpose.
  • Preferred examples of the other layers include intermediate layers (first intermediate layer and second intermediate layer) described later.
  • the other layer may be composed of one layer (single layer), or may be composed of two or more layers.
  • these layers may be the same as or different from each other, and the combination of these layers is not particularly limited as long as the effects of the present invention are not impaired.
  • a plurality of layers may be the same or different from each other” means “all layers may be the same or all layers. May be different, and only some of the layers may be the same ”, and“ a plurality of layers are different from each other ”means that“ at least one of the constituent material and thickness of each layer is different from each other ” "Means.
  • the laminated structure may include the other layer on any of a semiconductor chip with a protective film (for example, the semiconductor chip with protective film 10, 20, or 30) and a substrate (for example, the substrate 14).
  • a protective film for example, the semiconductor chip with protective film 10, 20, or 30
  • a substrate for example, the substrate 14
  • the other layer is provided in direct contact with any part of the semiconductor chip with a protective film. .
  • test pieces of the other layers are handled as “all test pieces other than the substrate”.
  • test pieces of the other layers are handled as “all test pieces other than the substrate, the first protective film, and the second protective film”.
  • the shear strength ratio of the laminated structure is 1.05 to 2, preferably 1.1 to 1.65, and more preferably 1.15 to 1.3. Since the shear strength ratio is equal to or higher than the lower limit value, the laminated structure in the semiconductor device is maintained in a stable bonding state with respect to the substrate of the semiconductor chip with a protective film even under conditions where the temperature change is severe. Becomes higher. On the other hand, since the shear strength ratio is less than or equal to the upper limit value, it is avoided that the bonding force of the semiconductor chip with a protective film to the substrate is excessively strong, for example, the reliability of the semiconductor device is further improved, Fabrication of the semiconductor device (the laminated structure) is easier.
  • the shear strength ratio of the laminated structure can be adjusted by adjusting the shear strength of the laminated structure.
  • the shear strength of the laminated structure can be adjusted, for example, by adjusting the hardness (curing degree) of the first protective film or the second protective film, and the hardness of the first protective film or the second protective film is It can be adjusted by these constituent materials, thicknesses, and the like. For example, by improving the hardness of the first protective film or the second protective film, the force (shearing force) applied to the semiconductor chip with the protective film is better dispersed in these protective films, and as a result, It is presumed that the shear strength of the laminated structure is improved.
  • the risk of breakage of the laminated structure is ⁇ 0.9 to 0.9, ⁇ 0.8 to 0.8, and ⁇ 0.5 to 0.5. Also good.
  • the fracture risk factor is within such a range, even in a condition where the temperature change is severe, in the stacked structure in the semiconductor device, the bonding of the semiconductor chip with a protective film to the substrate is maintained in a stable state. Increases effectiveness.
  • the fracture risk factor is ⁇ 0.9 or more, the bump on the first surface side portion (root portion) of the semiconductor chip and the top portion on the opposite side of the first surface side and the vicinity thereof Damage is further suppressed.
  • the semiconductor chip is less likely to expand and contract than the substrate when the temperature changes (the substrate is more likely to expand and contract than the semiconductor chip).
  • the semiconductor chip with the protective film is more likely to expand and contract the substrate when the temperature changes than the single semiconductor chip. Easy to follow. Therefore, the effect of this invention is acquired because a fracture risk factor exists in the said range.
  • substrate is not specifically limited, According to the objective, it can select arbitrarily.
  • the constituent material of the substrate include metals such as copper, gold, and aluminum; resins such as polyimide and epoxy resin; ceramics such as aluminum oxide and glass.
  • the constituent material of the substrate may be only one type, or two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • a substrate having two or more constituent materials a substrate made of a polymer alloy using two or more resins in combination, a substrate made of a material using a resin component such as a glass epoxy resin and a non-resin component in combination, and the like can be given. It is done. However, these are examples.
  • the thickness of the substrate is not particularly limited, but is preferably 10 to 3000 ⁇ m, more preferably 100 to 2000 ⁇ m, and particularly preferably 500 to 1000 ⁇ m.
  • the effect of this invention becomes higher because the thickness of a board
  • the thickness of the first protective film is not particularly limited, but is preferably 1 to 100 ⁇ m, more preferably 5 to 75 ⁇ m, and particularly preferably 5 to 50 ⁇ m.
  • the thickness of the first protective film is equal to or greater than the lower limit, the first surface of the semiconductor chip, the surface having the bumps of the semiconductor wafer (circuit surface or bump forming surface), and the bumps of the semiconductor chip and the semiconductor wafer, The protective ability of the first protective film becomes higher.
  • the thickness of the first protective film is equal to or less than the upper limit value, an excessive thickness is suppressed.
  • the surface having the bumps is the first as in the case of the semiconductor chip having bumps on the surface.
  • the surface opposite to the first surface in other words, the back surface of the semiconductor wafer may be referred to as the second surface.
  • the thickness of the second protective film is not particularly limited, but is preferably 1 to 100 ⁇ m, more preferably 5 to 75 ⁇ m, and particularly preferably 5 to 50 ⁇ m.
  • the thickness of the second protective film is equal to or more than the lower limit value, the protective ability of the second protective film for the semiconductor chip is further increased.
  • the thickness of the second protective film is equal to or less than the upper limit value, an excessive thickness is suppressed.
  • the thickness of the semiconductor chip is not particularly limited, but is preferably 20 to 1000 ⁇ m, more preferably 40 to 500 ⁇ m, and may be 100 to 300 ⁇ m, for example. The effect of this invention becomes higher because the thickness of a semiconductor chip is in such a range.
  • the thickness of the semiconductor chip means “the thickness of the portion excluding the bumps of the semiconductor chip” unless otherwise specified. That is, the thickness of the semiconductor chip does not include the height of bumps described later.
  • positioning form of the bump in a semiconductor chip can be selected arbitrarily according to the objective, and are not specifically limited.
  • the height of the bump is not particularly limited, but is preferably 120 to 300 ⁇ m, more preferably 150 to 270 ⁇ m, and particularly preferably 180 to 240 ⁇ m.
  • the function of the bump can be further improved.
  • the height of the bump is not more than the above upper limit value, the curable resin film on the upper part of the bump when the curable resin film for forming the first protective film is attached to the first surface of the semiconductor wafer. The effect of suppressing the remaining is further increased.
  • the “bump height” means the height of the bump at the highest position from the first surface of the semiconductor wafer or semiconductor chip.
  • the width of the bump is not particularly limited, but is preferably 170 to 350 ⁇ m, more preferably 200 to 320 ⁇ m, and particularly preferably 230 to 290 ⁇ m.
  • the bump width is equal to or greater than the lower limit, the function of the bump can be further improved.
  • the width of the bump is equal to or less than the upper limit value, when the curable resin film for forming the first protective film is attached to the first surface of the semiconductor wafer, The effect of suppressing the remaining becomes higher.
  • the “bump width” refers to a distance between two different points on the bump surface when the bump is viewed from a direction perpendicular to the first surface of the semiconductor wafer or semiconductor chip. It means the maximum value of the line segment obtained by connecting with a straight line.
  • the distance between adjacent bumps is not particularly limited, but is preferably 250 to 800 ⁇ m, more preferably 300 to 600 ⁇ m, and particularly preferably 350 to 500 ⁇ m.
  • the distance is not less than the lower limit value, the function of the bump can be further improved.
  • the distance is not more than the upper limit, when the curable resin film for forming the first protective film is attached to the first surface of the semiconductor wafer, the curable resin film remains on the bumps. The effect which suppresses becomes higher.
  • “distance between adjacent bumps” means the minimum distance between the surfaces of adjacent bumps. Next, the manufacturing method will be described more specifically.
  • the semiconductor chip manufacturing process with a protective film is, for example, for forming a first protective film in a semiconductor chip with a protective film having a first protective film on the first surface of the semiconductor chip.
  • the curable resin film is attached to the first surface (bump forming surface, circuit surface) of the semiconductor wafer, the curable resin film is cured to form the first protective film, and then the first protective film is formed by dicing.
  • the semiconductor wafer is solidified (divided) together with the protective film, or the semiconductor wafer is solidified (divided) together with the curable resin film by dicing, and then the curable resin film is cured to be first. It can be manufactured by forming a protective film.
  • a semiconductor chip with a protective film provided with a second protective film on the second surface of the semiconductor chip is also a semiconductor chip with a protective film provided with the first protective film on the first surface, except that the formation part of the protective film is different.
  • the second protective film a semiconductor chip with a protective film having the second protective film on the second surface can be manufactured.
  • the order of forming these protective films is not particularly limited.
  • the second protective film may be formed after forming the first protective film
  • the first protective film may be formed after forming the second protective film
  • the first protective film and the first protective film Two protective films may be formed simultaneously. More specifically, for example, one of the sticking of the curable resin film for forming the first protective film to the semiconductor wafer and the sticking of the curable resin film for forming the second protective film to the semiconductor wafer are either May be performed first and the other may be performed later or simultaneously. Further, the formation of the first protective film by curing of the curable resin film and the formation of the second protective film by curing of the curable resin film may be performed first, and the other may be performed later. You may do it at the same time.
  • the first protective film is formed using, for example, a first protective film-forming sheet that includes a first support sheet and includes a curable resin film for forming the first protective film on the first support sheet. ,It can be carried out.
  • the “curable resin film” may be referred to as a “curable resin layer”.
  • the first protective film-forming sheet When the first protective film-forming sheet is used, the first protective film-forming sheet is attached to the semiconductor wafer first through the curable resin layer (curable resin film) constituting the first protective film-forming sheet. Affix to one side. And by heating the curable resin layer after pasting, its fluidity is increased, it is spread between the bumps so as to cover the bumps, and is in close contact with the first surface of the semiconductor wafer. The bump is embedded in the curable resin layer so as to cover the surface in the vicinity of the first surface of the semiconductor wafer. Thereby, the formation of the curable resin layer on the first surface of the semiconductor wafer is completed.
  • curable resin layer curable resin film
  • the curable resin layer formed on the first surface of the semiconductor wafer or the semiconductor chip is cured by heating or irradiation with energy rays at a target timing, thereby forming a first protective film.
  • the first protective film protects the first surface of the semiconductor wafer or semiconductor chip and the bumps in close contact with them.
  • the first support sheet in the first protective film forming sheet may be removed at a suitable timing before and after curing of the curable resin layer.
  • the formation of the second protective film is, for example, a second protective film having a second support sheet and a curable resin film (curable resin layer) for forming a second protective film provided on the second support sheet. This can be done using a forming sheet.
  • the second protective film forming sheet is attached to the second surface of the semiconductor wafer via the curable resin layer (curable resin film) constituting the second protective film forming sheet. Affix to Thereby, the formation of the curable resin layer on the second surface of the semiconductor wafer is completed.
  • the second protective film is formed by curing the curable resin layer formed on the second surface of the semiconductor wafer or the semiconductor chip by heating or irradiation with energy rays at a target timing.
  • the second protective film protects the second surface of the semiconductor wafer or the semiconductor chip while being in close contact with the second surface.
  • the second support sheet in the second protective film forming sheet may be removed at a suitable timing before and after the curing of the curable resin layer.
  • a 2nd support sheet can also be used as a dicing sheet when dicing the semiconductor wafer provided with the 2nd protective film which is a curable resin layer or its hardened
  • the laminate is used as long as the laminated structure of the first support sheet and the first protective film is maintained. 1 referred to as a protective film forming sheet.
  • the laminate is used for forming the second protective film as long as the laminated structure of the second support sheet and the second protective film is maintained. This is called a sheet.
  • the configuration of the first protective film forming sheet will be described.
  • the first support sheet may be composed of one layer (single layer) or may be composed of two or more layers. When a support sheet consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited as long as the effects of the present invention are not impaired.
  • a first substrate is provided, and a first pressure-sensitive adhesive layer is laminated on the first substrate; a first substrate is provided, and the first substrate is provided on the first substrate.
  • a first intermediate layer is laminated and a first pressure-sensitive adhesive layer is laminated on the first intermediate layer; those consisting only of a first substrate; those consisting only of a release film.
  • seat for protective film formation may be replaced with the 1st adhesive layer, and may be equipped with the energy-beam hardened
  • the said 1st base material is a sheet form or a film form
  • various resin is mentioned, for example.
  • the resin include polyethylene such as low density polyethylene (may be abbreviated as LDPE), linear low density polyethylene (may be abbreviated as LLDPE), and high density polyethylene (sometimes abbreviated as HDPE); polypropylene, Polyolefins other than polyethylene such as polybutene, polybutadiene, polymethylpentene, norbornene resin; ethylene-vinyl acetate copolymer, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester copolymer, ethylene- Ethylene copolymers such as norbornene copolymers (ie, copolymers obtained using ethylene as a monomer); Vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymers (ie, vinyl chloride as a monomer) Resin obtained
  • LDPE low density polyethylene
  • polymer alloys such as a mixture of the said polyester and other resin
  • the polymer alloy of the polyester and the other resin is preferably one in which the amount of the resin other than the polyester is relatively small.
  • the resin include a crosslinked resin in which one or more of the resins exemplified so far are crosslinked; modification of an ionomer or the like using one or more of the resins exemplified so far. Resins can also be mentioned.
  • (meth) acrylic acid is a concept including both “acrylic acid” and “methacrylic acid”.
  • (meth) acrylate is a concept including both “acrylate” and “methacrylate”
  • (meth) acryloyl group Is a concept including both an “acryloyl group” and a “methacryloyl group”.
  • the resin constituting the first base material may be only one type, or two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the first substrate may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers may be the same or different from each other, and a combination of these layers Is not particularly limited.
  • the thickness of the first base material is preferably 5 to 1000 ⁇ m.
  • the “thickness of the first base material” means the thickness of the entire first base material.
  • the thickness of the first base material composed of a plurality of layers means all of the first base material. Means the total thickness of the layers.
  • the first base material contains various known additives such as a filler, a colorant, an antistatic agent, an antioxidant, an organic lubricant, a catalyst, and a softener (plasticizer) in addition to the main constituent materials such as the resin. You may do it.
  • the first substrate has an anchor coat layer on the surface thereof.
  • the surface may be modified.
  • the first substrate can be manufactured by a known method.
  • the 1st base material containing resin can be manufactured by shape
  • the release film may be a known film in this field.
  • a resin film such as polyethylene terephthalate is release-treated by silicone treatment or the like; at least one surface of the film is a release surface composed of polyolefin. And the like.
  • the thickness of the release film is preferably the same as the thickness of the first substrate.
  • the said 1st adhesive layer is a sheet form or a film form, and contains an adhesive.
  • the adhesive include adhesive resins such as acrylic resin, urethane resin, rubber resin, silicone resin, epoxy resin, polyvinyl ether, and polycarbonate, and acrylic resin is preferable.
  • the “adhesive resin” is a concept including both an adhesive resin and an adhesive resin.
  • the resin itself has an adhesive property
  • resins that exhibit tackiness when used in combination with other components such as additives, and resins that exhibit adhesiveness due to the presence of a trigger such as heat or water.
  • the first pressure-sensitive adhesive layer may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, the plurality of layers may be the same or different from each other. The combination is not particularly limited.
  • the thickness of the first pressure-sensitive adhesive layer is preferably 1 to 1000 ⁇ m.
  • the “thickness of the first pressure-sensitive adhesive layer” means the thickness of the entire first pressure-sensitive adhesive layer.
  • the thickness of the first pressure-sensitive adhesive layer composed of a plurality of layers means the first pressure-sensitive adhesive layer. Means the total thickness of all the layers that make up.
  • the first pressure-sensitive adhesive layer may be formed from an energy ray-curable pressure-sensitive adhesive, or may be formed from a non-energy ray-curable pressure-sensitive adhesive.
  • the first pressure-sensitive adhesive layer formed from the energy ray-curable pressure-sensitive adhesive can easily adjust the physical properties before and after curing.
  • “energy beam” means an electromagnetic wave or charged particle beam having energy quanta, and examples thereof include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet ray source.
  • the electron beam can be emitted by an electron beam accelerator or the like.
  • energy ray curable means a property that cures when irradiated with energy rays
  • non-energy ray curable means a property that does not cure even when irradiated with energy rays. To do.
  • the first pressure-sensitive adhesive layer can be formed from a first pressure-sensitive adhesive composition containing a pressure-sensitive adhesive.
  • a 1st adhesive layer can be formed in the target site
  • the first pressure-sensitive adhesive composition may be applied by a known method, for example, an air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, Examples include a method using various coaters such as a screen coater, a Meyer bar coater, and a kiss coater.
  • the drying conditions of the first pressure-sensitive adhesive composition are not particularly limited, but the first pressure-sensitive adhesive composition containing the solvent described later is preferably heat-dried.
  • the first pressure-sensitive adhesive composition containing the solvent is preferably dried, for example, at 70 to 130 ° C. for 10 seconds to 5 minutes.
  • the first pressure-sensitive adhesive composition containing the energy ray-curable pressure-sensitive adhesive is, for example, non-energy First pressure-sensitive adhesive composition containing a linear curable adhesive resin (I-1a) (hereinafter sometimes abbreviated as “adhesive resin (I-1a)”) and an energy ray-curable compound (I-1): energy ray curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the non-energy ray curable adhesive resin (I-1a) (hereinafter referred to as “adhesiveness”)
  • a first pressure-sensitive adhesive composition (I-2) which may be abbreviated as “resin (I-2a)”; the pressure-sensitive adhesive resin (I-2a) and an energy ray-curable low molecular weight compound; Examples thereof include the first pressure-sensitive adhesive composition (I-3).
  • the first pressure-sensitive adhesive composition examples include a non-energy ray-curable pressure-sensitive adhesive composition in addition to the energy beam-curable pressure-sensitive adhesive composition.
  • the non-energy ray curable first pressure-sensitive adhesive composition include non-energy materials such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins.
  • the first pressure-sensitive adhesive composition such as the first pressure-sensitive adhesive compositions (I-1) to (I-4) includes the pressure-sensitive adhesive and, if necessary, the components other than the pressure-sensitive adhesive. It is obtained by blending each component for constituting the composition. The order of addition at the time of blending each component is not particularly limited, and two or more components may be added simultaneously. When a solvent is used, it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or by diluting any compounding component other than the solvent in advance. You may use it by mixing a solvent with these compounding ingredients without leaving.
  • the method of mixing each component at the time of compounding is not particularly limited, from a known method such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves What is necessary is just to select suitably.
  • the temperature and time during the addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30 ° C.
  • middle layer is a sheet form or a film form, What is necessary is just to select the constituent material suitably according to the objective, and it is not specifically limited.
  • the first intermediate layer may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers may be the same or different from each other, and a combination of these layers. Is not particularly limited.
  • the thickness of the first intermediate layer may be appropriately selected according to the purpose and is not particularly limited.
  • the “thickness of the first intermediate layer” means the thickness of the entire first intermediate layer.
  • the thickness of the first intermediate layer composed of a plurality of layers means all of the first intermediate layer. Means the total thickness of the layers.
  • middle layer can be formed from the composition for 1st intermediate
  • the first intermediate layer-forming composition is applied to the surface of the first intermediate layer and dried as necessary, or cured by irradiation with energy rays, so that the first intermediate layer is formed on the target site. Layers can be formed.
  • the composition for forming the first intermediate layer is obtained by the same method as in the case of the first pressure-sensitive adhesive composition except that the blending components are different.
  • the curable resin layer may be either a thermosetting resin layer (also referred to as a thermosetting resin film) or an energy ray curable resin layer (also referred to as an energy ray curable resin film). .
  • the curable resin layer forms a first protective film by curing.
  • the curable resin layer may be only one layer (single layer), or may be two or more layers. In the case of a plurality of layers, these layers may be the same or different from each other, and a combination of these layers. Is not particularly limited.
  • the thermosetting resin layer preferably contains, for example, a polymer component (A) and a thermosetting component (B).
  • the polymer component (A) is a component formed by a polymerization reaction of a polymerizable compound.
  • the thermosetting component (B) is a component that can undergo a curing (polymerization) reaction using heat as a reaction trigger.
  • the polymerization reaction includes a polycondensation reaction.
  • the thickness of the thermosetting resin layer is preferably 1 to 100 ⁇ m, more preferably 5 to 75 ⁇ m, and particularly preferably 5 to 50 ⁇ m.
  • the thickness of the thermosetting resin layer is equal to or more than the lower limit value, it is possible to form a first protective film with higher protection ability.
  • the thickness of the thermosetting resin layer is equal to or less than the upper limit, an excessive thickness is suppressed.
  • the thickness of the thermosetting resin layer means the thickness of the entire thermosetting resin layer.
  • the thickness of the thermosetting resin layer composed of a plurality of layers means the thermosetting resin layer. Means the total thickness of all the layers that make up.
  • the thermosetting resin layer is applied to the first surface of the semiconductor wafer and cured to form a first protective film.
  • the curing condition is such that the first protective film exhibits its function sufficiently.
  • the heating temperature during curing of the thermosetting resin layer is preferably 100 to 200 ° C., more preferably 110 to 180 ° C., and particularly preferably 120 to 170 ° C.
  • the heating time at the time of curing is preferably 0.5 to 5 hours, more preferably 0.5 to 3.5 hours, and particularly preferably 1 to 2.5 hours.
  • thermosetting resin layer can be formed from the composition for thermosetting resin layer formation containing the constituent material.
  • a thermosetting resin layer can be formed at a target site by applying a composition for forming a thermosetting resin layer on a surface on which a thermosetting resin layer is to be formed and drying the composition as necessary.
  • thermosetting resin layer-forming composition may be applied by a known method, for example, by the same method as that for the first pressure-sensitive adhesive composition described above.
  • drying conditions of the composition for thermosetting resin layer formation are not specifically limited, For example, it may be the same as the case of the above-mentioned 1st adhesive composition.
  • thermosetting resin layer forming composition (III) for example, a thermosetting resin layer forming composition (III) containing a polymer component (A) and a thermosetting component (B) (in this specification, And may be simply abbreviated as “resin layer forming composition (III)”).
  • the polymer component (A) is a polymer compound for imparting film-forming properties, flexibility and the like to the thermosetting resin layer.
  • the polymer component (A) contained in the resin layer forming composition (III) and the thermosetting resin layer may be only one type, two or more types, and when two or more types are combined, The ratio can be arbitrarily selected.
  • polymer component (A) examples include polyvinyl acetal, acrylic resin, polyester, urethane resin, acrylic urethane resin, silicone resin, rubber resin, phenoxy resin, thermosetting polyimide, and the like.
  • An acrylic resin is preferred.
  • polyvinyl acetal in a polymer component (A) a well-known thing is mentioned.
  • polyvinyl formal, polyvinyl butyral, etc. are mentioned, for example, Polyvinyl butyral is more preferable.
  • polyvinyl butyral include those having structural units represented by the following formulas (i) -1, (i) -2, and (i) -3.
  • the weight average molecular weight (Mw) of the polyvinyl acetal is preferably 5000 to 200000, and more preferably 8000 to 100,000.
  • Mw weight average molecular weight
  • the thermosetting resin layer is attached to the first surface, the thermosetting at the upper portion of the bump (the top portion of the bump and the vicinity thereof). The effect of suppressing the remaining resin layer is further increased.
  • the “weight average molecular weight” is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method unless otherwise specified.
  • the glass transition temperature (Tg) of polyvinyl acetal is preferably 40 to 80 ° C., more preferably 50 to 70 ° C.
  • Tg of the polyvinyl acetal is within such a range, the effect of suppressing the remaining of the thermosetting resin layer on the upper part of the bump is higher when the thermosetting resin layer is attached to the first surface.
  • the ratio of three or more monomers constituting polyvinyl acetal can be arbitrarily selected.
  • the weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1500,000.
  • Mw weight average molecular weight
  • the shape stability of the thermosetting resin layer time stability during storage
  • the thermosetting resin layer easily follows the uneven surface of the adherend, and between the adherend and the thermosetting resin layer. Generation of voids and the like is further suppressed.
  • the glass transition temperature (Tg) of the acrylic resin is preferably ⁇ 60 to 70 ° C., and more preferably ⁇ 30 to 50 ° C.
  • Tg of the acrylic resin is equal to or more than the lower limit value, the adhesive force between the first protective film and the first support sheet is suppressed, and the peelability of the first support sheet is improved.
  • adhesive force with the to-be-adhered body of a thermosetting resin layer and a 1st protective film improves because Tg of acrylic resin is below the said upper limit.
  • acrylic resins include polymers of one or more (meth) acrylic acid esters; in addition to (meth) acrylic acid esters, (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and Examples thereof include a copolymer obtained by copolymerizing one or more monomers selected from N-methylolacrylamide and the like.
  • Examples of the (meth) acrylic acid ester constituting the acrylic resin include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, (meth ) N-butyl acrylate, isobutyl (meth) acrylate, sec-butyl (meth) acrylate, tert-butyl (meth) acrylate, pentyl (meth) acrylate, hexyl (meth) acrylate, (meth) acrylic Heptyl acid, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n-nonyl (meth) acrylate, isononyl (meth) acrylate, decyl (meth) acrylate , Undecyl (me
  • Only one type of monomer constituting the acrylic resin may be used, or two or more types may be used, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the acrylic resin may have a functional group that can be bonded to other compounds such as a vinyl group, a (meth) acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group.
  • the functional group of the acrylic resin may be bonded to another compound via a cross-linking agent (F) described later, or may be directly bonded to another compound not via the cross-linking agent (F). .
  • F cross-linking agent
  • the acrylic resin is an acrylic resin obtained by copolymerizing at least one monomer selected from the group consisting of butyl acrylate, methyl acrylate, glycidyl methacrylate, and 2-hydroxyethyl acrylate. Is preferred.
  • thermoplastic resin other than polyvinyl acetal and acrylic resin
  • thermoplastic resin a thermoplastic resin other than polyvinyl acetal and acrylic resin
  • thermoplastic resin By using the thermoplastic resin, the peelability of the first protective film from the first support sheet is improved, and the thermosetting resin layer can easily follow the uneven surface of the adherend. Generation of voids and the like may be further suppressed between the curable resin layer.
  • the weight average molecular weight of the thermoplastic resin is preferably 1000 to 100,000, more preferably 3000 to 80,000.
  • the glass transition temperature (Tg) of the thermoplastic resin is preferably ⁇ 30 to 150 ° C., and more preferably ⁇ 20 to 120 ° C.
  • thermoplastic resin examples include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.
  • thermoplastic resin contained in the resin layer forming composition (III) and the thermosetting resin layer may be only one kind, two or more kinds, and when two or more kinds, the combination and ratio thereof are as follows: Can be arbitrarily selected.
  • the content of the polymer component (A) is based on the total mass of all components other than the solvent constituting the resin layer forming composition (III) regardless of the type of the polymer component (A) (that is, It is preferably 5 to 85% by mass (relative to the total mass of the thermosetting resin layer), more preferably 5 to 80% by mass, such as 5 to 70% by mass, 5 to 60% by mass, It may be any of 5 to 50% by mass, 5 to 40% by mass, and 5 to 30% by mass.
  • these contents in composition (III) for resin layer formation are examples.
  • the polymer component (A) may also correspond to the thermosetting component (B).
  • the resin layer forming composition (III) contains components corresponding to both the polymer component (A) and the thermosetting component (B)
  • the resin layer forming composition (III) is considered to contain a polymer component (A) and a thermosetting component (B).
  • thermosetting component (B) is a component for curing the thermosetting resin layer to form a hard first protective film.
  • the thermosetting component (B) contained in the resin layer forming composition (III) and the thermosetting resin layer may be only one type, two or more types, or a combination thereof when two or more types are used. The ratio can be arbitrarily selected.
  • thermosetting component (B) examples include epoxy thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, and silicone resins, and epoxy thermosetting resins are preferable.
  • the epoxy thermosetting resin includes an epoxy resin (B1) and a thermosetting agent (B2).
  • the epoxy-based thermosetting resin contained in the resin layer forming composition (III) and the thermosetting resin layer may be only one type, two or more types, and in the case of two or more types, a combination thereof and The ratio can be arbitrarily selected.
  • Epoxy resin (B1) examples include known ones such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, orthocresol novolac epoxy resins, dicyclopentadiene type epoxy resins, Biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenylene skeleton type epoxy resins, and the like, and bifunctional or higher functional epoxy compounds are listed.
  • an epoxy resin having an unsaturated hydrocarbon group may be used as the epoxy resin (B1).
  • An epoxy resin having an unsaturated hydrocarbon group is more compatible with an acrylic resin than an epoxy resin having no unsaturated hydrocarbon group. Therefore, the reliability of the package obtained using the 1st sheet
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds obtained by converting a part of the epoxy group of a polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group. Such a compound can be obtained, for example, by addition reaction of (meth) acrylic acid or a derivative thereof to an epoxy group. Moreover, as an epoxy resin which has an unsaturated hydrocarbon group, the compound etc. which the group which has an unsaturated hydrocarbon group directly couple
  • the unsaturated hydrocarbon group is a polymerizable unsaturated group.
  • ethenyl group also referred to as a vinyl group
  • 2-propenyl group also referred to as an allyl group
  • (meth) acryloyl group specifically referred to as an ethenyl group
  • (Meth) acrylamide groups and the like and an acryloyl group is preferred.
  • the number average molecular weight of the epoxy resin (B1) is not particularly limited, but is preferably 300 to 30000 in view of curability of the thermosetting resin layer and strength and heat resistance of the first protective film after curing. 400 to 10,000 is more preferable, and 500 to 3000 is particularly preferable.
  • the “number average molecular weight” means a number average molecular weight represented by a standard polystyrene equivalent value measured by a gel permeation chromatography (GPC) method unless otherwise specified.
  • the epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1000 g / eq, and more preferably 130 to 800 g / eq.
  • the “epoxy equivalent” means the number of grams (g / eq) of an epoxy compound containing 1 gram equivalent of an epoxy group, and can be measured according to the method of JIS K 7236: 2001.
  • the epoxy resin (B1) may be used alone or in combination of two or more, and when two or more are used in combination, their combination and ratio can be arbitrarily selected.
  • thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
  • a thermosetting agent (B2) the compound which has 2 or more of functional groups which can react with an epoxy group in 1 molecule is mentioned, for example.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, a group in which an acid group has been anhydrideized, and the like, and a phenolic hydroxyl group, an amino group, or an acid group has been anhydrideized. It is preferably a group, more preferably a phenolic hydroxyl group or an amino group.
  • thermosetting agents (B2) examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolac-type phenol resins, dicyclopentadiene-type phenol resins, and aralkyl-type phenol resins.
  • examples of the amine-based curing agent having an amino group include dicyandiamide (sometimes abbreviated as “DICY” in this specification).
  • the thermosetting agent (B2) may have an unsaturated hydrocarbon group.
  • examples of the thermosetting agent (B2) having an unsaturated hydrocarbon group include compounds in which a part of the hydroxyl group of the phenol resin is substituted with a group having an unsaturated hydrocarbon group, an aromatic ring of the phenol resin, Examples thereof include compounds in which a group having a saturated hydrocarbon group is directly bonded.
  • the unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having an unsaturated hydrocarbon group described above.
  • thermosetting agent (B2) In the case of using a phenolic curing agent as the thermosetting agent (B2), the thermosetting agent (B2) has a softening point or a glass transition temperature from the viewpoint of improving the peelability of the first protective film from the first support sheet. A high one is preferred.
  • thermosetting agent (B2) for example, the number average molecular weight of the resin component such as polyfunctional phenol resin, novolac type phenol resin, dicyclopentadiene type phenol resin, aralkyl type phenol resin is preferably 300 to 30,000. 400 to 10,000 is more preferable, and 500 to 3000 is particularly preferable.
  • the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, but is preferably 60 to 500, for example.
  • thermosetting agent (B2) may be used individually by 1 type, may use 2 or more types together, and when using 2 or more types together, those combinations and ratios can be selected arbitrarily.
  • the content of the thermosetting agent (B2) is 0.1 to 500 parts by mass with respect to 100 parts by mass of the epoxy resin (B1). It is preferably 1 to 200 parts by mass, and for example, it may be 1 to 100 parts by mass, 1 to 80 parts by mass, or 1 to 60 parts by mass.
  • the content of the thermosetting agent (B2) is equal to or more than the lower limit, curing of the thermosetting resin layer is more likely to proceed.
  • the moisture absorption rate of a thermosetting resin layer is reduced because the said content of a thermosetting agent (B2) is below the said upper limit, The package obtained using the sheet
  • the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is heavy. It is preferably 50 to 1000 parts by weight, more preferably 60 to 950 parts by weight, and particularly preferably 70 to 900 parts by weight with respect to 100 parts by weight of the combined component (A).
  • the content of the thermosetting component (B) is within such a range, the adhesive force between the first protective film and the first support sheet is suppressed, and the peelability of the first support sheet is improved.
  • the resin layer forming composition (III) and the thermosetting resin layer may contain a curing accelerator (C).
  • the curing accelerator (C) is a component for adjusting the curing rate of the resin layer forming composition (III).
  • Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol; 2-methylimidazole, 2-phenylimidazole Imidazoles such as 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole (ie, one or more hydrogen atoms are hydrogen Imidazoles substituted with groups other than atoms); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (ie
  • the curing accelerator (C) contained in the resin layer forming composition (III) and the thermosetting resin layer may be only one type, two or more types, and when two or more types are combined, The ratio can be arbitrarily selected.
  • the content of the curing accelerator (C) is 100 masses of the thermosetting component (B).
  • the amount is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass with respect to parts.
  • the effect by using a hardening accelerator (C) is acquired more notably because the said content of a hardening accelerator (C) is more than the said lower limit.
  • the highly polar curing accelerator (C) is deposited in the thermosetting resin layer under high temperature and high humidity conditions. The effect of suppressing segregation by moving toward the adhesion interface with the body is enhanced, and the reliability of the package obtained using the first protective film forming sheet is further improved.
  • the resin layer forming composition (III) and the thermosetting resin layer may contain a filler (D).
  • the thermosetting resin layer contains the filler (D) the first protective film obtained by curing the thermosetting resin layer can easily adjust the thermal expansion coefficient. And the reliability of the package obtained using the sheet
  • the thermosetting resin layer contains the filler (D) the moisture absorption rate of the first protective film can be reduced or the heat dissipation can be improved.
  • the filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferred inorganic fillers include, for example, powders such as silica, alumina, talc, calcium carbonate, titanium white, bengara, silicon carbide, boron nitride; beads formed by spheroidizing these inorganic fillers; surface modification of these inorganic fillers Products; single crystal fibers of these inorganic fillers; glass fibers and the like.
  • the inorganic filler is preferably silica or alumina.
  • the resin layer forming composition (III) and the filler (D) contained in the thermosetting resin layer may be only one kind, two or more kinds, and when two or more kinds are used, combinations and ratios thereof. Can be chosen arbitrarily.
  • the average particle size of the filler (D) is not particularly limited, but is preferably 0.01 to 20 ⁇ m, more preferably 0.1 to 15 ⁇ m, and particularly preferably 0.3 to 10 ⁇ m. .
  • average particle size means the value of the particle size (D 50 ) at an integrated value of 50% in the particle size distribution curve obtained by the laser diffraction scattering method, unless otherwise specified. .
  • the content of the filler (D) (that is, the content of the filler (D) of the thermosetting resin layer) is other than the solvent of the resin layer forming composition (III). It is preferably 3 to 60% by mass, more preferably 3 to 55% by mass, based on the total mass of all components (that is, relative to the total mass of the thermosetting resin layer). Adjustment of said thermal expansion coefficient becomes easier because content of a filler (D) is such a range. Moreover, the infrared transmittance of a curable resin layer and a 1st protective film improves more because content of a filler (D) is below the said upper limit.
  • the resin layer forming composition (III) and the thermosetting resin layer may contain a coupling agent (E).
  • a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound By using a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound, the adhesion and adhesion of the thermosetting resin layer to the adherend can be improved. Further, by using the coupling agent (E), the first protective film obtained by curing the thermosetting resin layer has improved water resistance without impairing heat resistance.
  • the coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional group of the polymer component (A), the thermosetting component (B), etc., and is preferably a silane coupling agent. More preferred. Preferred examples of the silane coupling agent include 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3- (2-aminoethylamino) propyltrimethoxysilane, 3- (2-amino Ethylamino) propylmethyldiethoxysilane, 3- (phenyla
  • composition for forming the resin layer (III) and the coupling agent (E) contained in the thermosetting resin layer may be only one kind, two or more kinds, and in the case of two or more kinds, a combination thereof and The ratio can be arbitrarily selected.
  • the content of the coupling agent (E) in the resin layer forming composition (III) and the thermosetting resin layer is such that the polymer component (A) and the thermosetting component (
  • the total content of B) is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and 0.1 to 5 parts by mass with respect to 100 parts by mass. Is particularly preferred.
  • the content of the coupling agent (E) is equal to or higher than the lower limit, the dispersibility of the filler (D) in the resin and the adhesion of the thermosetting resin layer to the adherend are improved.
  • the effect by using a coupling agent (E) etc. is acquired more notably.
  • production of an outgas is suppressed more because the said content of a coupling agent (E) is below the said upper limit.
  • Cross-linking agent (F) As the polymer component (A), those having functional groups such as vinyl group, (meth) acryloyl group, amino group, hydroxyl group, carboxy group, isocyanate group and the like that can be bonded to other compounds such as the above-mentioned acrylic resin.
  • the resin layer forming composition (III) and the thermosetting resin layer may contain a crosslinking agent (F).
  • the cross-linking agent (F) is a component for cross-linking the functional group in the polymer component (A) with another compound to cross-link, and by this cross-linking, initial adhesion of the thermosetting resin layer Force and cohesion can be adjusted.
  • crosslinking agent (F) examples include organic polyvalent isocyanate compounds, organic polyvalent imine compounds, metal chelate crosslinking agents (crosslinking agents having a metal chelate structure), aziridine crosslinking agents (crosslinking agents having an aziridinyl group), and the like. Is mentioned.
  • organic polyvalent isocyanate compound examples include an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound, and an alicyclic polyvalent isocyanate compound (hereinafter, these compounds are collectively referred to as “aromatic polyvalent isocyanate compound and the like”).
  • a trimer such as the aromatic polyisocyanate compound, isocyanurate and adduct; a terminal isocyanate urethane prepolymer obtained by reacting the aromatic polyvalent isocyanate compound and the polyol compound. Etc.
  • the “adduct body” includes the aromatic polyisocyanate compound, the aliphatic polyisocyanate compound or the alicyclic polyisocyanate compound, and a low amount such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. It means a reaction product with a molecularly active hydrogen-containing compound. Examples of the adduct include a xylylene diisocyanate adduct of trimethylolpropane as described later.
  • the “terminal isocyanate urethane prepolymer” means a prepolymer having a urethane bond and an isocyanate group at the end of the molecule.
  • organic polyvalent isocyanate compound for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4 Dimethylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; trimethylol Any one of tolylene diisocyanate, hexamethylene diisocyanate and xylylene diisocyanate is added to all or some hydroxyl groups of a polyol such as propane. Or two or more compounds are added; lysine diisocyanate.
  • a polyol such as propane.
  • organic polyvalent imine compound examples include N, N′-diphenylmethane-4,4′-bis (1-aziridinecarboxamide), trimethylolpropane-tri- ⁇ -aziridinylpropionate, and tetramethylolmethane.
  • -Tri- ⁇ -aziridinylpropionate, N, N′-toluene-2,4-bis (1-aziridinecarboxamide) triethylenemelamine and the like.
  • crosslinking agent (F) When an organic polyvalent isocyanate compound is used as the crosslinking agent (F), it is preferable to use a hydroxyl group-containing polymer as the polymer component (A).
  • a cross-linked structure is formed on the thermosetting resin layer by a reaction between the crosslinking agent (F) and the polymer component (A). Easy to introduce.
  • composition for forming the resin layer (III) and the crosslinking agent (F) contained in the thermosetting resin layer may be only one kind, two or more kinds, and in the case of two or more kinds, combinations and ratios thereof. Can be chosen arbitrarily.
  • the content of the crosslinking agent (F) in the resin layer forming composition (III) is 0.01 to 100 parts by mass with respect to 100 parts by mass of the polymer component (A).
  • the amount is preferably 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.5 to 5 parts by mass.
  • the effect by using a crosslinking agent (F) is acquired more notably because the said content of a crosslinking agent (F) is more than the said lower limit.
  • the excessive use of a crosslinking agent (F) is suppressed because the said content of a crosslinking agent (F) is below the said upper limit.
  • thermosetting resin (G) The resin layer forming composition (III) and the thermosetting resin layer may contain an energy ray curable resin (G). Since the thermosetting resin layer contains the energy ray curable resin (G), the characteristics can be changed by irradiation with energy rays.
  • the energy beam curable resin (G) is obtained by polymerizing (curing) an energy beam curable compound.
  • the energy ray curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth) acryloyl group are preferable.
  • acrylate compound examples include trimethylolpropane tri (meth) acrylate, tetramethylolmethanetetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta ( Chain aliphatic skeleton-containing (meth) acrylates such as (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate; Cyclic aliphatic skeleton-containing (meth) acrylates such as cyclopentanyl di (meth) acrylate; polyalkylene glycol (meth) acrylates such as polyethylene glycol di (meth) acrylate Oligoester (meth)
  • the weight average molecular weight of the energy ray curable compound is preferably 100 to 30000, and more preferably 300 to 10000.
  • the energy ray-curable compound used for the polymerization may be only one type, or two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the energy ray curable resin (G) contained in the resin layer forming composition (III) may be only one type, or two or more types, and when there are two or more types, the combination and ratio thereof are arbitrary. You can choose.
  • the content of the energy beam curable resin (G) is based on the total mass of all components other than the solvent of the resin layer forming composition (III) (that is, It is preferably 1 to 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass (relative to the total mass of the thermosetting resin layer).
  • Photopolymerization initiator (H) When the resin layer forming composition (III) and the thermosetting resin layer contain an energy ray curable resin (G), photopolymerization is performed in order to efficiently advance the polymerization reaction of the energy ray curable resin (G). An initiator (H) may be contained.
  • Examples of the photopolymerization initiator (H) in the resin layer forming composition (III) include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl, and benzoin.
  • Benzoin compounds such as dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethane-1-one; bis ( 2,4,6-trimethylbenzoyl) phenylphosphine oxide, acylphosphine oxide compounds such as 2,4,6-trimethylbenzoyldiphenylphosphine oxide; benzylphenyl sulfide, tetramethyl Sulfide compounds such as uranium monosulfide; ⁇ -ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthate and 2,4-diethylthioxanthone Peroxide compounds; diketone compounds such as diacety
  • the photopolymerization initiator (H) contained in the resin layer forming composition (III) may be only one type, two or more types, and in the case of two or more types, the combination and ratio thereof are arbitrarily selected. it can.
  • content of a photoinitiator (H) is 100 mass parts of content of energy-beam curable resin (G).
  • the content is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass.
  • the resin layer forming composition (III) and the thermosetting resin layer may contain a colorant (I).
  • the colorant (I) is a component for imparting appropriate light transmittance to, for example, the thermosetting resin layer and the first protective film.
  • the colorant (I) may be a known one, for example, any of a dye and a pigment.
  • the dye may be any of an acid dye, a reactive dye, a direct dye, a disperse dye, a cationic dye, and the like.
  • the colorant (I) contained in the resin layer forming composition (III) and the thermosetting resin layer may be only one type, or two or more types, and in the case of two or more types, combinations and ratios thereof. Can be chosen arbitrarily.
  • the content of the colorant (I) in the resin layer forming composition (III) may be appropriately adjusted so that the visible light transmittance and the infrared transmittance of the thermosetting resin layer have desired values, and are particularly limited. Not.
  • the content of the colorant (I) depends on the type of the colorant (I) or a combination of these colorants (I) when two or more colorants (I) are used in combination. It may be adjusted as appropriate.
  • the content of the colorant (I) (that is, the content of the colorant (I) in the thermosetting resin layer) is a solvent constituting the resin layer forming composition (III).
  • the total content of all components other than is preferably 0.01 to 10% by mass.
  • the resin layer forming composition (III) and the thermosetting resin layer may contain a general-purpose additive (J) as long as the effects of the present invention are not impaired.
  • the general-purpose additive (J) may be a known one and can be arbitrarily selected according to the purpose, and is not particularly limited. Is mentioned.
  • the resin layer forming composition (III) and the general-purpose additive (J) contained in the thermosetting resin layer may be only one kind, two or more kinds, and when two or more kinds are combined, The ratio can be arbitrarily selected.
  • the contents of the resin layer forming composition (III) and the general-purpose additive (J) in the thermosetting resin layer are not particularly limited, and may be appropriately selected depending on the purpose.
  • the resin layer forming composition (III) preferably further contains a solvent.
  • the resin layer forming composition (III) containing a solvent has good handleability.
  • the solvent is not particularly limited. Preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol. Esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.
  • the solvent contained in the resin layer forming composition (III) may be only one type, or two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
  • the solvent contained in the resin layer forming composition (III) is preferably methyl ethyl ketone from the viewpoint that the components in the resin layer forming composition (III) can be more uniformly mixed.
  • the content of the solvent in the resin layer forming composition (III) is not particularly limited, and may be appropriately selected according to the type of components other than the solvent, for example.
  • thermosetting resin layer forming composition such as the resin layer forming composition (III) can be obtained by blending each component for constituting the composition.
  • the order of addition at the time of blending each component is not particularly limited, and two or more components may be added simultaneously.
  • a solvent it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or by diluting any compounding component other than the solvent in advance. You may use it by mixing a solvent with these compounding ingredients without leaving.
  • the method of mixing each component at the time of compounding is not particularly limited, from a known method such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves What is necessary is just to select suitably.
  • the temperature and time during the addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30 ° C.
  • the energy ray curable component (a) is preferably uncured, preferably tacky, and more preferably uncured and tacky.
  • energy beam and “energy beam curability” are as described above.
  • the thickness of the energy beam curable resin layer is preferably 1 to 100 ⁇ m, more preferably 5 to 75 ⁇ m, and particularly preferably 5 to 50 ⁇ m.
  • a first protective film with higher protective ability can be formed.
  • it will be suppressed that it becomes excessive thickness because the thickness of an energy-beam curable resin layer is below the said upper limit.
  • the “thickness of the energy beam curable resin layer” means the thickness of the entire energy beam curable resin layer. It means the total thickness of all layers constituting the curable resin layer.
  • the energy ray curable resin layer is applied to the first surface of the semiconductor wafer and cured to form the first protective film.
  • the curing condition is such that the first protective film exhibits its function sufficiently.
  • the degree is not particularly limited as long as it is a degree, and may be appropriately selected according to the type of the energy ray curable resin layer.
  • the illuminance of the energy beam when the energy beam curable resin layer is cured is preferably 180 to 280 mW / cm 2 .
  • the amount of energy rays during the curing is preferably 450 to 1000 mJ / cm 2 .
  • the energy ray curable resin layer can be formed from an energy ray curable resin layer forming composition containing the constituent material.
  • an energy ray curable resin layer is formed on a target site by applying a composition for forming an energy ray curable resin layer on the surface on which the energy ray curable resin layer is to be formed, and drying as necessary. it can.
  • the application of the energy ray curable resin layer forming composition may be performed by a known method, for example, by the same method as in the case of applying the first pressure-sensitive adhesive composition described above.
  • the drying conditions of the composition for forming an energy ray curable resin layer are not particularly limited, and may be the same as, for example, the case of the first pressure-sensitive adhesive composition described above.
  • the energy ray curable resin layer forming composition include, for example, an energy ray curable resin layer forming composition (IV) containing the energy ray curable component (a) (in this specification, simply “resin”). Layer forming composition (IV) ”and the like.
  • the energy ray-curable component (a) is a component that is cured by irradiation with energy rays, and is also a component for imparting film forming property, flexibility, and the like to the energy ray-curable resin layer.
  • Examples of the energy ray-curable component (a) include a polymer (a1) having an energy ray-curable group and a weight average molecular weight of 80000 to 2000000, and an energy ray-curable group and a molecular weight of 100 to 80000.
  • a compound (a2) is mentioned.
  • the polymer (a1) may be crosslinked at least partly with a crosslinking agent or may not be crosslinked.
  • Examples of the polymer (a1) include an acrylic polymer having a functional group capable of reacting with a group possessed by another compound, a group that reacts with the functional group, and energy such as an energy ray-curable double bond.
  • Examples thereof include an acrylic resin formed by a reaction of an energy ray curable compound having a linear curable group.
  • Examples of the functional group capable of reacting with the group possessed by the other compound include a hydroxyl group, a carboxy group, an amino group, and a substituted amino group (one or two hydrogen atoms of the amino group are substituted with a group other than a hydrogen atom). Group), an epoxy group, and the like.
  • the functional group is preferably a group other than a carboxy group from the viewpoint of preventing corrosion of a circuit such as a semiconductor wafer or a semiconductor chip.
  • the functional group is preferably a hydroxyl group.
  • the polymer (a1) contained in the resin layer forming composition (IV) and the energy ray curable resin layer may be only one kind, two kinds or more, and a combination thereof when they are two kinds or more. The ratio can be arbitrarily selected.
  • Examples of the energy ray curable group having the energy ray curable group and the compound (a2) having a molecular weight of 100 to 80,000 include a group containing an energy ray curable double bond.
  • Preferred examples include (meth) An acryloyl group, a vinyl group, etc. are mentioned.
  • it is a low molecular weight compound having a (meth) acryloyl group as an energy ray curable group.
  • the compound (a2) is not particularly limited as long as it satisfies the above conditions, but has a low molecular weight compound having an energy ray curable group, an epoxy resin having an energy ray curable group, and an energy ray curable group.
  • a phenol resin etc. are mentioned.
  • examples of the low molecular weight compound having an energy ray curable group include polyfunctional monomers or oligomers, and an acrylate compound having a (meth) acryloyl group is preferable.
  • the compound (a2) contained in the resin layer forming composition (IV) and the energy ray curable resin layer may be only one kind, two kinds or more, and in the case of two kinds or more, a combination thereof and The ratio can be arbitrarily selected.
  • composition for resin layer formation (IV) and the energy ray curable resin layer contain the compound (a2) as the energy ray curable component (a), the polymer having no energy ray curable group ( It is also preferable to contain b).
  • the polymer (b) may be at least partially crosslinked by a crosslinking agent, or may not be crosslinked.
  • polymer (b) having no energy ray curable group examples include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber resins, and acrylic urethane resins.
  • the polymer (b) is preferably an acrylic polymer (hereinafter sometimes abbreviated as “acrylic polymer (b-1)”).
  • the resin layer forming composition (IV) is not an energy ray curable component (a), and is not a heat ray curable component (a) or polymer (b), depending on the purpose. You may contain 1 type, or 2 or more types selected from the group which consists of a sclerosing
  • the resin layer forming composition (IV) containing the energy ray curable component and the thermosetting component the formed energy ray curable resin layer has an adhesive force to an adherend by heating. And the strength of the first protective film formed from this energy beam curable resin layer is also improved.
  • thermosetting component photopolymerization initiator, colorant, filler, coupling agent, crosslinking agent and general-purpose additive in the resin layer forming composition (IV), the resin layer forming composition (III ), A thermosetting component (B), a photopolymerization initiator (H), a colorant (I), a filler (D), a coupling agent (E), a crosslinking agent (F), and a general-purpose additive (J).
  • thermosetting component thermosetting component
  • B thermosetting component
  • H photopolymerization initiator
  • I colorant
  • filler D
  • coupling agent E
  • F crosslinking agent
  • J general-purpose additive
  • each of the thermosetting component, the photopolymerization initiator, the colorant, the filler, the coupling agent, the crosslinking agent, and the general-purpose additive may be used alone. Two or more kinds may be used in combination, and when two or more kinds are used in combination, their combination and ratio can be arbitrarily selected. If the content of the thermosetting component, photopolymerization initiator, colorant, filler, coupling agent, crosslinking agent and general-purpose additive in the resin layer forming composition (IV) is appropriately adjusted according to the purpose. Well, not particularly limited.
  • the resin layer forming composition (IV) preferably further contains a solvent since its handleability is improved by dilution.
  • the solvent contained in the resin layer forming composition (IV) include the same solvents as those in the resin layer forming composition (III).
  • the solvent contained in the resin layer forming composition (IV) may be only one kind or two or more kinds.
  • the resin layer forming composition (IV) comprises an energy ray curable component (a), and optionally a polymer (b) having no energy ray curable group, a thermosetting component, and photopolymerization. It includes at least one component selected from the group consisting of an initiator, a colorant, a filler, a coupling agent, a crosslinking agent, a general-purpose additive, and a solvent.
  • the composition for forming an energy ray curable resin layer such as the resin layer forming composition (IV) can be obtained by blending each component for constituting the composition.
  • the order of addition at the time of blending each component is not particularly limited, and two or more components may be added simultaneously.
  • a solvent it may be used by mixing the solvent with any compounding component other than the solvent and diluting the compounding component in advance, or by diluting any compounding component other than the solvent in advance. You may use it by mixing a solvent with these compounding ingredients without leaving.
  • the method of mixing each component at the time of compounding is not particularly limited, from a known method such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves What is necessary is just to select suitably.
  • the temperature and time during the addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30 ° C.
  • FIG. 5 is a cross-sectional view schematically showing an example of the first protective film-forming sheet.
  • seat 801 for protective film formation shown here uses the 1st adhesive layer laminated
  • the first support sheet includes a first substrate 811, a first adhesive layer 812 laminated on the first substrate 811, and a curable resin laminated on the first adhesive layer 812.
  • Layer (curable resin film) 82 The first support sheet 810 is a laminate of the first base material 811 and the first pressure-sensitive adhesive layer 812, and is on the one surface 810 a of the first support sheet 810, that is, the first pressure-sensitive adhesive layer 812 in the first support sheet 810.
  • a curable resin layer 82 is provided on the surface 812a on the side where the layers are stacked.
  • FIG. 6 is a cross-sectional view schematically showing another example of the first protective film forming sheet.
  • seat 802 for 1st protective film formation shown here uses what consists only of peeling films as a 1st support sheet. That is, the first protective film forming sheet 802 includes a curable resin layer (curable resin film) 82 on the release film 821. As another aspect, the first protective film forming sheet 802 includes a release film 821 and a curable resin layer (curable resin film) 82 laminated on the release film 821.
  • the first support sheet 820 is a release film 821, on one surface 820 a of the first support sheet 820, that is, one surface of the release film 821 (in this specification, it may be referred to as “first surface”).
  • a curable resin layer 82 is provided on 821a.
  • the first surface 821a of the release film 821 is preferably subjected to a release treatment (a release treatment surface).
  • seat in which a 1st support sheet consists only of a 1st base material also becomes the structure similar to what is shown in FIG. That is, in the first protective film forming sheet 802 shown in FIG. 6, what is denoted by reference numeral 821 is not the release film but the first base material is also suitable as the first protective film forming sheet.
  • the first protective film-forming sheet is the outermost layer (for example, a curable resin layer) on the side opposite to the side on which the first support sheet is provided in the first protective film-forming sheet.
  • a release film may be further provided on the surface.
  • the 1st protective film formation sheet provided with the peeling film is easy to store and handle.
  • the release film in this case may be removed when the first protective film forming sheet is used.
  • the first protective film forming sheet can be produced by sequentially laminating the above-described layers so as to have a corresponding positional relationship.
  • the method for forming each layer is as described above.
  • a first protective film-forming sheet (first film shown in FIG. 5) in which a first base material, a first pressure-sensitive adhesive layer, and a curable resin layer (curable resin film) are laminated in this order in the thickness direction.
  • 1 sheet for protective film formation etc.) can be manufactured by the method shown below. That is, a 1st adhesive layer is laminated
  • the 1st substrate, the 1st adhesive layer, the curable resin layer, and the release film are in this order by pasting together the curable resin layer on this release film with the 1st adhesive layer on the 1st substrate.
  • a first protective film forming sheet laminated in the thickness direction is obtained.
  • the release film may be removed when the first protective film forming sheet is used.
  • the above-mentioned first protective film forming sheet can also be produced by the following method. That is, a 1st adhesive layer is laminated
  • the first base material, the first pressure-sensitive adhesive layer, the curable resin layer, and the release film are in this order.
  • the first protective film-forming sheet provided with a layer other than each of the above-described layers is the above-described manufacturing method, and the stacking process of the other layer is performed so that the stacking position of the other layer is an appropriate position. It can manufacture by adding suitably and performing. For example, when the first support sheet is formed by laminating the first base material, the first intermediate layer, and the first pressure-sensitive adhesive layer in this order in the thickness direction, the first protective film forming sheet is the above-mentioned In a manufacturing method, it can manufacture by adding and laminating
  • seat which is not provided with any arbitrary layers among each above-mentioned layers can be manufactured by abbreviate
  • the first protective film-forming sheet in the case where the first support sheet is composed only of the first base material can be manufactured by omitting the step of laminating the first pressure-sensitive adhesive layer in the above-described manufacturing method.
  • Second protective film forming sheet and method for producing the same for example, the same sheet as the first protective film forming sheet described above may be used.
  • the second protective film forming sheet is not necessarily the same as the first protective film forming sheet because the required function is different from that of the first protective film forming sheet.
  • the curable resin layer in the second protective film forming sheet can be composed of the same components as in the case of the curable resin layer in the first protective film forming sheet, but the content of each component of the curable resin layer is The second protective film is preferably adjusted as appropriate so that the intended function can be sufficiently exhibited.
  • the first base material, the first intermediate layer, and the first pressure-sensitive adhesive layer in the first protective film-forming sheet are respectively the second base material, It is called a second intermediate layer and a second pressure-sensitive adhesive layer.
  • the second protective film forming sheet can be manufactured by the same method as that of the first protective film forming sheet.
  • the said laminated structure manufacturing process is produced by joining the said semiconductor chip with a protective film to a board
  • the laminated structure is a novel one.
  • a flux agent is applied to the upper surface of the bump of the semiconductor chip with a protective film, the upper portion of the bump is brought into contact with the substrate, and the bump and the substrate are heated in this state. As a result, the bumps and the substrate are joined together to produce a laminated structure.
  • the heating conditions in this case are not particularly limited, but for example, it is preferable to heat at 220 to 320 ° C. for 0.5 to 10 minutes.
  • a semiconductor device can be manufactured by the same method as the conventional method using the obtained laminated structure.
  • the laminated structure is sealed with a resin to form a semiconductor package, and a target semiconductor device can be manufactured using the semiconductor package.
  • a semiconductor device is a semiconductor device including a stacked structure in which a semiconductor chip with a protective film having a bump is bonded to a substrate through the bump, and the semiconductor with a protective film
  • the chip has at least a first protective film on the first surface having bumps of the semiconductor chip, or has a second protective film on the second surface opposite to the first surface of the semiconductor chip,
  • the semiconductor chip with a protective film includes the first protective film, in the first protective film, an upper portion of the bump protrudes through the first protective film, and the first protective film or
  • the second protective film has a shear strength ratio of 1.05 to 2 and a fracture risk factor of ⁇ 0.9 to 0 when the shear strength ratio and fracture risk factor of the laminated structure are measured by the following method.
  • a heating / cooling test was performed in which the temperature was lowered from 200 ° C. to ⁇ 70 ° C. at a rate of 5 ° C./min.
  • the amount of expansion and contraction ES ⁇ m which is the total amount of the shrinkage amount S ⁇ m of the test piece when the temperature is lowered to 65 ° C., is obtained, and further, [expansion and shrinkage amount ES of the test piece] ⁇ [thickness of the test piece]
  • An expansion / contraction parameter P ⁇ m 2 that is Next, an expansion / contraction parameter difference ⁇ P1 ⁇ m 2 which is a value of [expansion / contraction parameter P of substrate test piece] ⁇ [total value of expansion / contraction parameters P of all test pieces other than the substrate] is obtained, Next, an expansion / contraction standard parameter difference which is a value of [expansion / contraction parameter P of substrate test piece] ⁇ [total value of expansion / contraction parameters P of all test pieces other than substrate, first protective film and second protective film]
  • ⁇ P0 ⁇ m 2 The value of ⁇ P1 / ⁇ P0 is used as a risk factor for fracture of the laminated structure.
  • the semiconductor device of the present invention can have the same configuration as that of a conventional semiconductor device except that the semiconductor device includes the laminated structure.
  • (A) Polyvinyl butyral having a structural unit represented by the following formulas (i) -1, (i) -2, and (i) -3 (“ESREC BL-10” manufactured by Sekisui Chemical Co., Ltd., weight average) (Molecular weight 25000, glass transition temperature 59 ° C.).
  • (A) -2 copolymerized n-butyl acrylate (1 part by mass), methyl methacrylate (79 parts by mass), glycidyl methacrylate (5 parts by mass) and 2-hydroxyethyl acrylate (15 parts by mass).
  • An acrylic resin weight average molecular weight 370000, glass transition temperature 7 ° C.).
  • n 1 is an integer from 68 to 74.
  • Epoxy resin (B1) (B1) -1: Liquid epoxy resin (epoxy resin having a flexible skeleton introduced, “EXA 4850-150” manufactured by DIC, molecular weight 900)
  • B1) -2 Polyfunctional aromatic epoxy resin (“EPPN-502H” manufactured by Nippon Kayaku Co., Ltd.)
  • B1) -4 Bisphenol A type epoxy resin (“BPA328” manufactured by Nippon Shokubai Co., Ltd.) /
  • B2) -2 Dicyandiamide (solid dispersion type latent curing agent, “ADEKA HARDNER EH-3636AS” manufactured by ADEKA,
  • Example 1 ⁇ Manufacture of laminated structure> (Manufacture of a composition for forming a thermosetting resin layer (1))
  • Polymer component (A) -1, epoxy resin (B1) -1, epoxy resin (B1) -2, epoxy resin (B1) -3, thermosetting agent (B2) -1, and curing accelerator (C)- 1 is dissolved or dispersed in methyl ethyl ketone so that the ratio of these contents is the value shown in Table 1, and stirred at 23 ° C., so that the solid content concentration is as a composition for forming a thermosetting resin layer.
  • a resin layer forming composition (III) -1 having a content of 55% by mass was obtained.
  • the description of “-” in the column of the contained component in Table 1 means that the composition for forming a thermosetting resin layer does not contain the component.
  • all content of each component shown in Table 1 is solid content.
  • first pressure-sensitive adhesive composition (I-2) To the adhesive resin (I-2a) (100 parts by mass) obtained above, an isocyanate-based crosslinking agent (“Coronate L” manufactured by Nippon Polyurethane Co., Ltd., a tolylene diisocyanate trimer adduct of trimethylolpropane) (2 0.0 parts by mass), a photopolymerization initiator (“Irgacure 184” manufactured by Ciba Specialty Chemicals, 1-hydroxycyclohexyl phenyl ketone) (0.1 parts by mass) and 0.1 g by mass are added, and the mixture is agitated. A first pressure-sensitive adhesive composition (I-2) was obtained.
  • an isocyanate-based crosslinking agent (“Coronate L” manufactured by Nippon Polyurethane Co., Ltd., a tolylene diisocyanate trimer adduct of trimethylolpropane) (2 0.0 parts by mass)
  • a photopolymerization initiator (“
  • a first pressure-sensitive adhesive composition (I -2) was applied and dried by heating at 100 ° C. for 1 minute to form a first pressure-sensitive adhesive layer having a thickness of 10 ⁇ m.
  • the first pressure-sensitive adhesive layer on the release film and the first base material (thickness 400 ⁇ m) made of a polyurethane acrylate film are bonded together, and the first base material and the first pressure-sensitive adhesive layer are laminated,
  • the 1st support sheet provided with the peeling film on the 1st adhesive layer was obtained.
  • thermosetting resin film having a thickness of 30 ⁇ m.
  • the release film is removed from the first support sheet, and the exposed first pressure-sensitive adhesive layer and the thermosetting resin film on the release film obtained above are bonded together to form the first base material, the first The 1st sheet
  • thermosetting resin layer (2) Polymer component (A) -2, epoxy resin (B1) -3, epoxy resin (B1) -4, thermosetting agent (B2) -2, curing accelerator (C) -1, filler (D) -1 , Coupling agent (E) -1, Coupling agent (E) -2, Coupling agent (E) -3, and Coloring agent (I) -1, the proportions of which are shown in Table 1.
  • the resin layer forming composition (III)-having a solid content concentration of 55% by mass as a thermosetting resin layer forming composition is dissolved or dispersed in methyl ethyl ketone and stirred at 23 ° C. 2 was obtained.
  • the above-mentioned first pressure-sensitive adhesive composition (I-2) is applied to the release-treated surface of a release film (“SP-PET 381031” manufactured by Lintec Co., Ltd., thickness 38 ⁇ m) obtained by releasing one side of a polyethylene terephthalate film by silicone treatment.
  • the first pressure-sensitive adhesive layer was formed by coating and drying by heating.
  • the first pressure-sensitive adhesive layer on the release film and the second base material (thickness 100 ⁇ m) made of a polyolefin film are bonded together, and the second base material, the first pressure-sensitive adhesive layer and the release film are in this order, A laminate formed by laminating these in the thickness direction was produced.
  • the second pressure-sensitive adhesive is obtained by irradiating the first pressure-sensitive adhesive layer from the release film side of the obtained laminate with ultraviolet rays under the conditions of an illuminance of 230 mW / cm 2 and a light amount of 120 mJ / cm 2 and curing the ultraviolet rays.
  • an ultraviolet cured product of a first pressure-sensitive adhesive layer having a thickness of 10 ⁇ m was laminated on the second base material, and a second support sheet provided with a release film on the second pressure-sensitive adhesive layer was obtained.
  • thermosetting resin film having a thickness of 25 ⁇ m.
  • the release film is removed from the second support sheet, the exposed second pressure-sensitive adhesive layer and the thermosetting resin film on the release film obtained above are bonded together, and the second base material, the second The 2nd protective film formation sheet which has the structure shown in FIG. 5 by which an adhesive layer, a thermosetting resin film, and a peeling film are laminated
  • a silicon wafer (diameter having a large number of bumps having a shape similar to that shown in FIG. 1, having a height of 200 ⁇ m and a width of 250 ⁇ m, and a distance between the bumps of 400 ⁇ m on the circuit surface of an 8-inch silicon wafer. 200 mm, thickness 250 ⁇ m) was prepared. And a peeling film is removed from the sheet
  • thermosetting resin film was brought into close contact with the circuit surface and the bump surface.
  • the first support sheet was removed from the thermosetting resin film.
  • the release film was removed from the second protective film-forming sheet obtained above, and the newly exposed exposed surface (second adhesive) of the thermosetting resin film was heated while heating the thermosetting resin film at 70 ° C.
  • the surface opposite to the side provided with the agent layer) was affixed to the second surface (back surface) of the silicon wafer described above.
  • the two-layered thermosetting resin film was heat-cured by heat treatment at 130 ° C. for 2 hours to form a first protective film and a second protective film.
  • the semiconductor wafer provided with the first protective film and the second protective film is diced into individual pieces by using a dicing blade, and the size is 6 cm ⁇ 6 cm.
  • a semiconductor chip with a protective film comprising a film and having a second protective film on the second surface was obtained. Subsequently, this semiconductor chip with a protective film was picked up by being separated from a laminated sheet (corresponding to a dicing sheet) of the second base material and the second pressure-sensitive adhesive layer.
  • a flux agent is applied to the surface of the bump upper portion protruding through the first protective film of the semiconductor chip with the protective film, and an organic substrate (thickness) made of glass epoxy resin is formed on the upper portion of the bump.
  • the bump and the organic substrate are heated on a heater at 300 ° C. for 1 minute to bond the semiconductor chip with a protective film to the organic substrate via the bump, thereby forming the laminated structure. Obtained.
  • the obtained laminated structure was washed to remove the fluxing agent.
  • a semiconductor chip with a protective film having a first protective film on the first surface and a second protective film on the second surface was bonded to the organic substrate via the bumps. Is.
  • the laminated structure provided with the copper substrate obtained above is subjected to a Die Shear test, thereby providing a semiconductor chip with a protective film.
  • the bonding strength between the copper substrate and the copper substrate that is, the shear strength was measured. More specifically, the shear strength was measured by the following method. That is, the laminated structure is set on the bonding strength test equipment, the copper substrate in the laminated structure is fixed, and the direction parallel to the surface of the copper substrate with respect to the semiconductor chip with the protective film in the laminated structure Added power.
  • the model number “SHR-250-9000” is used, the load cell is the model number “DS100”, the share speed is 100 ⁇ m / sec, and the share height is 5 ⁇ m.
  • Power was applied under the conditions of And the force applied when the joining state of the semiconductor chip with a protective film and a copper substrate was destroyed was read, and the value was made into the shear strength (N) of a laminated structure. For the four laminated structures, the shear strength was measured in this way, and the average value of the measured values at this time was adopted as the shear strength (N) of the laminated structure.
  • Test layers of all the layers constituting the laminated structure including the organic substrate described above, that is, the substrate (organic substrate), the first protective film, the semiconductor chip, and the second protective film were prepared. These test pieces have the same width as that of each layer constituting the laminated structure except that the width is 5 mm and the length is 20 mm, and thus the sizes (width and length) are different (that is, The thickness of each test piece is the same as the thickness of each layer constituting the laminated structure).
  • Four test pieces were prepared for each type. Next, using a thermomechanical analyzer (“TMA4000SA” manufactured by NETCH), all the test pieces were heated from ⁇ 70 ° C. to 200 ° C.
  • the laminated structure including the organic substrate described above is subjected to a temperature cycle test (may be abbreviated as TCT) according to condition C ( ⁇ 65 ° C. to 150 ° C., exposure time 10 minutes) in accordance with JEDEC STANDERD 22-A104E.
  • TCT temperature cycle test
  • condition C ⁇ 65 ° C. to 150 ° C., exposure time 10 minutes
  • JEDEC STANDERD 22-A104E The number of cycles (times) until the bonded state between the semiconductor chip with a protective film and the organic substrate was destroyed was confirmed.
  • This temperature cycle test was performed on four laminated structures, the average value of the number of cycles was determined, and the value was used as an index of reliability of the laminated structure. The results are shown in Table 2.
  • Example 2 A laminated structure was obtained in the same manner as in Example 1 except that the second protective film was not formed. In the laminated structure obtained here, a semiconductor chip with a protective film having a first protective film on the first surface and no second protective film on the second surface was bonded to the substrate via the bumps. Is. And the obtained laminated structure was evaluated by the same method as the case of Example 1. The results are shown in Table 2.
  • Example 3 As a semiconductor wafer, a silicon wafer having a thickness of 500 ⁇ m instead of 250 ⁇ m and the same as that used in Example 2 was prepared. And the laminated structure was manufactured by the same method as the case of Example 2 except the point which used this silicon wafer, and was evaluated. The results are shown in Table 2.
  • Example 4 As a semiconductor wafer, a silicon wafer having a thickness of 500 ⁇ m instead of 250 ⁇ m and the other points being the same as those used in Example 1 was prepared. Further, as shown in Table 1, except that the filler (D) -1 (230 parts by mass) was newly used, the same method as in the case of the above-described resin layer forming composition (III) -1, As the thermosetting resin layer forming composition, a resin layer forming composition (III) -3 having a solid content of 69% by mass was obtained. A laminated structure was produced and evaluated by the same method as in Example 2 except that these silicon wafer and resin layer forming composition (III) -3 were used. The results are shown in Table 2.
  • Example 5 A laminated structure was obtained in the same manner as in Example 1 except that the thickness of the second protective film was changed to 43 ⁇ m instead of 25 ⁇ m and the first protective film was not formed.
  • the laminated structure obtained here has a second protective film on the second surface and a semiconductor chip with a protective film that does not have the first protective film on the first surface is bonded to the substrate via the bumps. Is.
  • the obtained laminated structure was evaluated by the same method as the case of Example 1. The results are shown in Table 3.
  • Example 2 As a semiconductor wafer, a silicon wafer having a thickness of 500 ⁇ m instead of 250 ⁇ m and the other points being the same as those used in Example 1 was prepared. A laminated structure was obtained in the same manner as in Example 1 except that this silicon wafer was used and the first protective film was not formed. The laminated structure obtained here has a second protective film on the second surface and a semiconductor chip with a protective film that does not have the first protective film on the first surface is bonded to the substrate via the bumps. Is. And the obtained laminated structure was evaluated by the same method as the case of Example 1. The results are shown in Table 3.
  • Example 1 The same semiconductor wafer as that used in Example 1 (that is, an 8-inch silicon wafer) was used as a semiconductor wafer, and a dicing sheet was attached to the second surface (back surface). Next, in the same manner as in the first embodiment, the semiconductor wafer that is not provided with both the first protective film and the second protective film is diced into individual pieces to obtain semiconductor chips, and the semiconductor chips are picked up. did. Next, in place of the above-described semiconductor chip with a protective film, a laminated structure is formed in the same manner as in Example 1 except that a semiconductor chip that does not include both the first protective film and the second protective film is used. A body (a laminated structure for comparison) was obtained.
  • the comparative laminated structure obtained here is a semiconductor chip alone and bonded to the substrate via its bumps, and is different from the comparative laminated structure including the copper substrate described above. .
  • reliability evaluation was performed on this comparative laminated structure by the same method as in Example 1. The results are shown in Table 3.
  • the shear strength ratio of the laminated structure is 1.15 to 2.00, and the fracture risk factor is 0.83 to 0.90.
  • the number of cycles until the bonding state between the semiconductor chip with the protective film and the organic substrate is broken is 300 times or more, and the bonding of the semiconductor chip with the protective film to the substrate can be performed over a long period of time even under a temperature change condition. It was stable.
  • Comparative Example 1 the shear strength ratio of the laminated structure is less than 1.05, and the fracture risk factor is greater than 0.9, so that the bonded state between the semiconductor chip with a protective film and the organic substrate
  • the bonding of the semiconductor chip with a protective film to the substrate was unstable under the condition that the number of cycles until the breakage was small and the temperature change was severe.
  • Comparative Example 2 the number of cycles until the bonded state between the semiconductor chip with a protective film and the organic substrate is destroyed due to the shear strength ratio of the laminated structure being greater than 2 and the fracture risk factor being greater than 0.9.
  • the bonding of the semiconductor chip with the protective film to the substrate was unstable under the condition that the temperature was small and the temperature change was severe.
  • the present invention can be used for manufacturing a semiconductor chip or the like having bumps in connection pad portions used in a flip chip mounting method.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Dicing (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
PCT/JP2018/018738 2017-05-17 2018-05-15 半導体装置及びその製造方法 WO2018212171A1 (ja)

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* Cited by examiner, † Cited by third party
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CN113508167A (zh) * 2019-03-07 2021-10-15 琳得科株式会社 固晶片、及带膜状粘合剂的半导体芯片的制造方法

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
WO2021171898A1 (ja) * 2020-02-27 2021-09-02 リンテック株式会社 保護膜形成用シート、保護膜付きチップの製造方法、及び積層物
JP7151940B1 (ja) * 2021-02-03 2022-10-12 住友ベークライト株式会社 封止用樹脂組成物および半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012611A (ja) * 1998-06-26 2000-01-14 Matsushita Electric Ind Co Ltd 電子部品の実装体および電子部品の実装方法
JP2002270634A (ja) * 2001-03-08 2002-09-20 Rohm Co Ltd 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2250059B1 (ko) 1973-10-31 1976-10-01 Sefa Sa
KR100637305B1 (ko) * 2002-02-27 2006-10-23 히다치 가세고교 가부시끼가이샤 봉지용 에폭시 수지 조성물 및 이를 사용한 전자 부품 장치
JP2004134487A (ja) * 2002-10-09 2004-04-30 Toray Ind Inc 半導体装置の製造方法および半導体装置
TWI229930B (en) * 2003-06-09 2005-03-21 Advanced Semiconductor Eng Chip structure
TWI222687B (en) * 2003-08-14 2004-10-21 Advanced Semiconductor Eng Semiconductor chip with bumps and method for manufacturing the same
JP2011228637A (ja) * 2010-03-30 2011-11-10 Furukawa Electric Co Ltd:The チップ保護用フィルム
TWM422754U (en) * 2010-10-06 2012-02-11 Xintec Inc Chip structure
JP5830250B2 (ja) 2011-02-15 2015-12-09 日東電工株式会社 半導体装置の製造方法
JP2012241063A (ja) * 2011-05-17 2012-12-10 Nitto Denko Corp 半導体装置製造用の接着シート
CN102842541A (zh) 2011-06-22 2012-12-26 日东电工株式会社 层叠膜及其使用
JP6033734B2 (ja) * 2013-04-30 2016-11-30 日東電工株式会社 フィルム状接着剤、ダイシングテープ一体型フィルム状接着剤、及び、半導体装置の製造方法
JP6347657B2 (ja) * 2014-04-22 2018-06-27 デクセリアルズ株式会社 保護テープ、及びこれを用いた半導体装置の製造方法
JPWO2016027888A1 (ja) * 2014-08-22 2017-06-01 リンテック株式会社 保護膜形成用シートおよび保護膜付き半導体チップの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012611A (ja) * 1998-06-26 2000-01-14 Matsushita Electric Ind Co Ltd 電子部品の実装体および電子部品の実装方法
JP2002270634A (ja) * 2001-03-08 2002-09-20 Rohm Co Ltd 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113508167A (zh) * 2019-03-07 2021-10-15 琳得科株式会社 固晶片、及带膜状粘合剂的半导体芯片的制造方法
CN113508167B (zh) * 2019-03-07 2023-08-18 琳得科株式会社 固晶片、及带膜状粘合剂的半导体芯片的制造方法

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