WO2018181340A1 - Composition de résine photosensible positive, film sec, article durci, carte de circuit imprimé, et élément semi-conducteur - Google Patents

Composition de résine photosensible positive, film sec, article durci, carte de circuit imprimé, et élément semi-conducteur Download PDF

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Publication number
WO2018181340A1
WO2018181340A1 PCT/JP2018/012474 JP2018012474W WO2018181340A1 WO 2018181340 A1 WO2018181340 A1 WO 2018181340A1 JP 2018012474 W JP2018012474 W JP 2018012474W WO 2018181340 A1 WO2018181340 A1 WO 2018181340A1
Authority
WO
WIPO (PCT)
Prior art keywords
photosensitive resin
resin composition
film
cured product
positive photosensitive
Prior art date
Application number
PCT/JP2018/012474
Other languages
English (en)
Japanese (ja)
Inventor
真歩 秋元
成強 許
Original Assignee
太陽ホールディングス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 太陽ホールディングス株式会社 filed Critical 太陽ホールディングス株式会社
Priority to CN201880010952.8A priority Critical patent/CN110268327B/zh
Priority to JP2019509900A priority patent/JP7134165B2/ja
Priority to KR1020197031854A priority patent/KR102522475B1/ko
Publication of WO2018181340A1 publication Critical patent/WO2018181340A1/fr

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Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22Polybenzoxazoles
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings

Definitions

  • the present invention relates to a positive photosensitive resin composition, a dry film, a cured product, a printed wiring board, and a semiconductor element.
  • the printed wiring board of the present invention is characterized by having the cured product.
  • the positive photosensitive resin composition of the present invention contains (A) a polybenzoxazole precursor.
  • A) The method of synthesizing the polybenzoxazole precursor is not particularly limited, and may be synthesized by a known method. For example, it can be obtained by reacting a dihydroxydiamine as an amine component with a dihalide of a dicarboxylic acid such as dicarboxylic acid dichloride as an acid component.
  • A is a single bond, —CH 2 —, —O—, —CO—, —S—, —SO 2 —, —NHCO—, —C (CF 3 ) 2 —, —C (CH 3 )) 2 represents a divalent group selected from the group consisting of-.
  • the number average molecular weight (Mn) of the polybenzoxazole precursor is preferably 5,000 to 100,000, and more preferably 8,000 to 50,000.
  • the number average molecular weight is a numerical value measured by GPC and converted by standard polystyrene.
  • the weight average molecular weight (Mw) of the (A) polybenzoxazole precursor is preferably 10,000 to 200,000, more preferably 16,000 to 100,000.
  • the weight average molecular weight is a numerical value measured by GPC and converted to standard polystyrene.
  • Mw / Mn is preferably from 1 to 5, and more preferably from 1 to 3.
  • One photoacid generator may be used alone, or two or more photoacid generators may be used in combination.
  • the blending amount of the (B) photoacid generator is preferably 3 to 20% by mass based on the total amount of the solid content of the composition.
  • Examples include N, N′-dimethylformamide, N-methylpyrrolidone, N-ethyl-2-pyrrolidone, N, N′-dimethylacetamide, diethylene glycol dimethyl ether, cyclopentanone, ⁇ -butyrolactone, ⁇ -acetyl- ⁇ - Examples include butyrolactone, tetramethylurea, 1,3-dimethyl-2-imidazolinone, N-cyclohexyl-2-pyrrolidone, dimethyl sulfoxide, hexamethylphosphoramide, pyridine, ⁇ -butyrolactone, and diethylene glycol monomethyl ether.
  • the coating film is exposed through a photomask having a pattern or directly.
  • the exposure light beam having a wavelength capable of activating the photoacid generator (B) and generating an acid is used.
  • the exposure light beam preferably has a maximum wavelength in the range of 350 to 450 nm.
  • the photosensitivity can be adjusted by appropriately using a sensitizer.
  • a contact aligner, mirror projection, stepper, laser direct exposure apparatus, or the like can be used as the exposure apparatus.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

L'invention fournit une composition de résine photosensible positive présentant d'excellentes propriétés de développement (résolution et taux de film résiduel), et une excellente aptitude à la formation de motif après durcissement, un film sec possédant une couche de résine obtenue à partir de cette composition, un article durci d'une couche de résine de cette composition ou de ce film sec, une carte de circuit imprimé possédant un article durci, et un élément semi-conducteur possédant cet article durci. Plus précisément, l'invention concerne notamment une composition de résine photosensible positive qui est caractéristique en ce qu'elle contient (A) un précurseur de polybenzoxazole, (B) un générateur de photoacide, (C) un agent de réticulation possédant un groupe hydroxyle phénolique, et (D) un agent de réticulation dépourvu de groupe hydroxyle phénolique, et possédant au moins deux groupes d'alcool méthylique.
PCT/JP2018/012474 2017-03-31 2018-03-27 Composition de résine photosensible positive, film sec, article durci, carte de circuit imprimé, et élément semi-conducteur WO2018181340A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880010952.8A CN110268327B (zh) 2017-03-31 2018-03-27 正型感光性树脂组合物、干膜、固化物、印刷电路板及半导体元件
JP2019509900A JP7134165B2 (ja) 2017-03-31 2018-03-27 ポジ型感光性樹脂組成物、ドライフィルム、硬化物、プリント配線板および半導体素子
KR1020197031854A KR102522475B1 (ko) 2017-03-31 2018-03-27 포지티브형 감광성 수지 조성물, 드라이 필름, 경화물, 프린트 배선판 및 반도체 소자

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-071754 2017-03-31
JP2017071754 2017-03-31

Publications (1)

Publication Number Publication Date
WO2018181340A1 true WO2018181340A1 (fr) 2018-10-04

Family

ID=63675944

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/012474 WO2018181340A1 (fr) 2017-03-31 2018-03-27 Composition de résine photosensible positive, film sec, article durci, carte de circuit imprimé, et élément semi-conducteur

Country Status (5)

Country Link
JP (1) JP7134165B2 (fr)
KR (1) KR102522475B1 (fr)
CN (1) CN110268327B (fr)
TW (1) TWI763815B (fr)
WO (1) WO2018181340A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015170524A1 (fr) * 2014-05-09 2015-11-12 住友ベークライト株式会社 Composition de résine photosensible, film durci, film protecteur, film isolant et dispositif électronique
JP2016145866A (ja) * 2015-02-06 2016-08-12 株式会社Adeka 感光性ソルダーレジスト組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4492749B2 (ja) 1998-10-30 2010-06-30 日立化成デュポンマイクロシステムズ株式会社 感光性重合体組成物、レリーフパターンの製造法及び電子部品
JP4815835B2 (ja) * 2005-03-30 2011-11-16 大日本印刷株式会社 感光性組成物、及びそれを用いた光学素子とその製造方法
CN103091987B (zh) * 2008-12-26 2016-11-23 日立化成株式会社 正型感光性树脂组合物、抗蚀图形的制造方法、半导体装置以及电子器件
JP5577688B2 (ja) * 2009-12-17 2014-08-27 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、それを用いた硬化膜及び電子部品
KR101910220B1 (ko) * 2011-06-15 2018-10-19 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 감광성 수지 조성물, 그 수지 조성물을 사용한 패턴 경화막의 제조 방법 및 전자 부품
KR101769190B1 (ko) * 2011-12-09 2017-08-17 아사히 가세이 이-매터리얼즈 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 반도체 장치 및 표시체 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015170524A1 (fr) * 2014-05-09 2015-11-12 住友ベークライト株式会社 Composition de résine photosensible, film durci, film protecteur, film isolant et dispositif électronique
JP2016145866A (ja) * 2015-02-06 2016-08-12 株式会社Adeka 感光性ソルダーレジスト組成物

Also Published As

Publication number Publication date
TWI763815B (zh) 2022-05-11
TW201841996A (zh) 2018-12-01
KR102522475B1 (ko) 2023-04-18
CN110268327A (zh) 2019-09-20
KR20190133228A (ko) 2019-12-02
JP7134165B2 (ja) 2022-09-09
CN110268327B (zh) 2023-04-28
JPWO2018181340A1 (ja) 2020-02-06

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