WO2018166428A1 - 一种量子点固态膜及其制备方法与量子点发光二极管 - Google Patents
一种量子点固态膜及其制备方法与量子点发光二极管 Download PDFInfo
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- WO2018166428A1 WO2018166428A1 PCT/CN2018/078777 CN2018078777W WO2018166428A1 WO 2018166428 A1 WO2018166428 A1 WO 2018166428A1 CN 2018078777 W CN2018078777 W CN 2018078777W WO 2018166428 A1 WO2018166428 A1 WO 2018166428A1
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- quantum dot
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- metal
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 209
- 238000000034 method Methods 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 76
- 239000002070 nanowire Substances 0.000 claims abstract description 60
- 239000002243 precursor Substances 0.000 claims abstract description 41
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 239000003607 modifier Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000007787 solid Substances 0.000 claims description 119
- 239000000243 solution Substances 0.000 claims description 51
- 239000002105 nanoparticle Substances 0.000 claims description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 9
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 6
- -1 3-aminobutyl Chemical group 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 3
- UAHAMNBFDHWCPU-UHFFFAOYSA-N 3-tributoxysilylpropan-1-amine Chemical compound CCCCO[Si](CCCN)(OCCCC)OCCCC UAHAMNBFDHWCPU-UHFFFAOYSA-N 0.000 claims description 3
- XUZVALKTSQQLCH-UHFFFAOYSA-N 3-tripropoxysilylpropan-1-amine Chemical compound CCCO[Si](CCCN)(OCCC)OCCC XUZVALKTSQQLCH-UHFFFAOYSA-N 0.000 claims description 3
- JZQUFXTZHWQLPU-UHFFFAOYSA-N 4-tributoxysilylbutan-2-amine Chemical compound CCCCO[Si](CCC(C)N)(OCCCC)OCCCC JZQUFXTZHWQLPU-UHFFFAOYSA-N 0.000 claims description 3
- BHTZPJXABISXPB-UHFFFAOYSA-N 4-triethoxysilylbutan-2-amine Chemical compound CCO[Si](OCC)(OCC)CCC(C)N BHTZPJXABISXPB-UHFFFAOYSA-N 0.000 claims description 3
- 101710134784 Agnoprotein Proteins 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229930003268 Vitamin C Natural products 0.000 claims description 3
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 claims description 3
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 claims description 3
- 235000019154 vitamin C Nutrition 0.000 claims description 3
- 239000011718 vitamin C Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 2
- UCSBCWBHZLSFGC-UHFFFAOYSA-N tributoxysilane Chemical compound CCCCO[SiH](OCCCC)OCCCC UCSBCWBHZLSFGC-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 32
- 239000010931 gold Substances 0.000 description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 18
- 239000011701 zinc Substances 0.000 description 16
- 238000002360 preparation method Methods 0.000 description 14
- 239000010949 copper Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 5
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 5
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 5
- 239000005642 Oleic acid Substances 0.000 description 5
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 5
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 229910021389 graphene Inorganic materials 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- LMJXSOYPAOSIPZ-UHFFFAOYSA-N 4-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=C(S)C=C1 LMJXSOYPAOSIPZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- LGDCSNDMFFFSHY-UHFFFAOYSA-N 4-butyl-n,n-diphenylaniline Polymers C1=CC(CCCC)=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 LGDCSNDMFFFSHY-UHFFFAOYSA-N 0.000 description 2
- ONPDPADPZNBIDE-UHFFFAOYSA-N 4-tripropoxysilylbutan-2-amine Chemical compound CCCO[Si](CCC(C)N)(OCCC)OCCC ONPDPADPZNBIDE-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 229910016001 MoSe Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- CCCMONHAUSKTEQ-UHFFFAOYSA-N octadecene Natural products CCCCCCCCCCCCCCCCC=C CCCMONHAUSKTEQ-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000001509 sodium citrate Substances 0.000 description 2
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- AWXGSYPUMWKTBR-UHFFFAOYSA-N 4-carbazol-9-yl-n,n-bis(4-carbazol-9-ylphenyl)aniline Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(N(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 AWXGSYPUMWKTBR-UHFFFAOYSA-N 0.000 description 1
- 125000003184 C60 fullerene group Chemical group 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000837344 Homo sapiens T-cell leukemia translocation-altered gene protein Proteins 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 102100028692 T-cell leukemia translocation-altered gene protein Human genes 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- ZTSAVNXIUHXYOY-CVBJKYQLSA-L cadmium(2+);(z)-octadec-9-enoate Chemical compound [Cd+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O ZTSAVNXIUHXYOY-CVBJKYQLSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000002110 nanocone Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- ATGUVEKSASEFFO-UHFFFAOYSA-N p-aminodiphenylamine Chemical compound C1=CC(N)=CC=C1NC1=CC=CC=C1 ATGUVEKSASEFFO-UHFFFAOYSA-N 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- LPEBYPDZMWMCLZ-CVBJKYQLSA-L zinc;(z)-octadec-9-enoate Chemical compound [Zn+2].CCCCCCCC\C=C/CCCCCCCC([O-])=O.CCCCCCCC\C=C/CCCCCCCC([O-])=O LPEBYPDZMWMCLZ-CVBJKYQLSA-L 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Definitions
- the invention relates to the technical field of light-emitting diodes, in particular to a quantum dot solid film, a preparation method thereof and a quantum dot light-emitting diode.
- Quantum dots is a hot field in this century, especially for luminescent quantum dots because of its adjustable band gap, good color purity, and good stability.
- quantum dot display is expected to become the next generation of new display technology.
- the preparation of quantum dot films and the assembly of quantum dot devices are very important.
- the problem of charge injection balance is involved, and the injection of electrons and holes is not balanced. It will affect the luminous efficiency and life of the entire device.
- the electron injection balance of the quantum dot solid film it is generally used to adjust the energy level barrier of the electron transport layer and the change of the ligand length on the surface of the quantum dot. However, these still cannot effectively and quickly transfer the charge.
- the object of the present invention is to provide a quantum dot solid film, a preparation method thereof and a quantum dot light emitting diode, aiming at solving the problem that the existing quantum dot solid film cannot efficiently and efficiently transfer charges.
- a method for preparing a quantum dot solid film comprising:
- the metal nanoparticle seed solution is provided, and the metal nanoparticle seed solution is deposited on the surface modifier-modified quantum dot solid material film by a solution method to obtain a quantum dot material solid film with a metal nanoparticle seed adsorbed on the surface;
- a precursor of the metal nanowire is provided, and the quantum dot material solid film adsorbed with a layer of metal nanoparticle seeds is immersed in a precursor of the metal nanowire to grow the metal nanowire to obtain the quantum dot solid film.
- the method for preparing a quantum dot solid film comprising:
- the quantum dots are formulated into a quantum dot solution, and then the quantum dot solution is deposited on the substrate and dried to form a solid film of quantum dot material;
- the surface modifier is formulated into a surface modifier solution, and the prepared solid film of the quantum dot material is immersed in the surface modifier solution, and then dried and washed to obtain a solid film of the quantum dot material modified by the surface modifier;
- the metal nanoparticle seed is formulated into a metal nanoparticle seed solution, and then the metal nanoparticle seed solution is deposited on the surface modifier-modified quantum dot solid material film by a solution method, and dried to obtain a surface coated with a metal nanoparticle seed.
- Quantum dot material solid film Quantum dot material solid film
- a quantum dot material solid film having a surface of a metal nanoparticle seed adsorbed on the surface is immersed in a precursor of the metal nanowire to grow the metal nanowire to obtain the quantum dot solid film.
- the method for preparing a quantum dot solid film wherein the quantum dots in the quantum dot solution are binary phase quantum dots, ternary phase quantum dots, and quaternary phase quantum dots.
- the method for preparing a quantum dot solid film wherein the binary phase quantum dots are one or more of CdS, CdSe, CdTe, InP, AgS, PbS, PbSe, and HgS; and the ternary phase quantum dots are Zn X One or more of Cd 1-X S, Cu X In 1-X S, Zn X Cd 1-X Se, Zn X Se 1-X S, Zn X Cd 1-X Te, PbSe X S 1-X
- the quaternary phase quantum dots are Zn X Cd 1-X S/ZnSe, Cu X In 1-X S/ZnS, Zn X Cd 1-X Se/ZnS, CuInSeS, Zn X Cd 1-X Te/ZnS, One or more of PbSe X S 1-X /ZnS.
- the method for preparing a quantum dot solid film wherein the surface modifier is (3-aminoethyl)triethoxysilane, (3-aminopropyl)triethoxysilane, (3-aminobutyl) Triethoxysilane, (3-aminoethyl)tripropoxysilane, (3-aminopropyl)tripropoxysilane, (3-aminobutyl)tripropoxysilane, (3- One or more of aminoethyl) tributoxysilane, (3-aminopropyl) tributoxysilane, (3-aminobutyl) tributoxysilane.
- the surface modifier is (3-aminoethyl)triethoxysilane, (3-aminopropyl)triethoxysilane, (3-aminobutyl) Triethoxysilane, (3-aminoethyl)tripropoxysilane, (3-aminoprop
- the method for preparing a quantum dot solid film wherein the metal nanoparticle seed is one of Au nanoparticles, Ag nanoparticles, and Cu nanoparticles.
- the method for preparing a quantum dot solid film wherein the precursor of the metal nanowire is one of a precursor of Au nanowires, a precursor of Ag nanowires, and a precursor of Cu nanowires.
- the method for preparing a quantum dot solid film wherein the precursor of the Au nanowire comprises H 2 O, CH 3 OH, HAuCl 4 , vitamin C and MBA; the precursor of the Ag nanowire comprises H 2 O , MEG, AgNO 3 and PVP; the precursor of the Cu nanowire comprises NaOH, CuNO 3 , ethylenediamine and hydrazine hydrate.
- a quantum dot solid film wherein the quantum dot solid film comprises a quantum dot material solid film, and a surface of the quantum dot material solid film is grown with a layer of metal nanowires.
- a quantum dot light emitting diode wherein the quantum dot light emitting diode comprises a cathode and an anode, and a quantum dot solid film according to the present invention is disposed between the cathode and the anode.
- the quantum dot light emitting diode includes an anode, a hole injection layer, a hole transport layer, a quantum dot solid film, an electron transport layer, and a cathode which are sequentially laminated and bonded.
- the present invention firstly prepares a quantum dot into a solid film of a quantum dot material, and uses a surface modifier to modify a solid film of the quantum dot material, and then deposits the metal nanoparticle seed on the solid film of the modified quantum dot material. Finally, the quantum dot solid film adsorbed with the metal nanoparticle seeds is placed in the precursor of the metal nanowire to grow the metal nanowire, and finally a solid film of the quantum dot material with a layer of metal nanowires is obtained, thereby obtaining the quantum dot. Solid film. QLED devices can be further fabricated using this quantum dot solid film. The quantum dot material solid film obtained by this method and having a layer of metal nanowires can efficiently transfer the charge and also improve the overall performance of the device.
- FIG. 1 is a flow chart of a preferred embodiment of a method for preparing a quantum dot solid film of the present invention.
- FIG. 2 is a schematic view showing a process of preparing a quantum dot solid film according to an embodiment of the present invention.
- the present invention provides a quantum dot solid film, a method for preparing the same, and a quantum dot light emitting diode.
- the present invention will be further described in detail below in order to make the objects, technical solutions and effects of the present invention more clear and clear. It is understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
- FIG. 1 is a flow chart of a preferred embodiment of a method for preparing a quantum dot solid film according to the present invention, as shown in the drawing, which includes:
- Step S100 providing a quantum dot solution, preparing a quantum dot material solid film on the substrate;
- step S100 the quantum dots are dried and weighed and dissolved in a solvent such as toluene or chloroform to prepare a quantum dot solution, wherein the concentration of the quantum dot solution is 1 to 50 mg/mL, and the preferred concentration is 15 mg/mL. Then, the prepared quantum dot solution is deposited on a substrate (such as ITO glass) by a solution method, and dried to prepare a solid film of a quantum dot material.
- the solution method of the present invention may be, but not limited to, spin coating, immersion pulling, printing, printing, inkjet, spray coating, roll coating, knife coating, casting, electrolytic deposition, slitting. One or more of a coating method and a strip coating method.
- the quantum dot may be one or more of a binary phase quantum dot, a ternary phase quantum dot, a quaternary phase quantum dot, and the like.
- the binary phase quantum dots may be one or more of CdS, CdSe, CdTe, InP, AgS, PbS, PbSe, HgS, etc.;
- the ternary phase quantum dots may be Zn X Cd 1-X S, Cu X One or more of In 1-X S, Zn X Cd 1-X Se, Zn X Se 1-X S, Zn X Cd 1-X Te, PbSe X S 1-X, etc.;
- quaternary phase quantum dots It may be Zn X Cd 1-X S/ZnSe, Cu X In 1-X S/ZnS, Zn X Cd 1-X Se/ZnS, CuInSeS, Zn X Cd 1-X Te/ZnS, PbSe X S 1-X One or more of
- Step S200 immersing the solid film of the quantum dot material in a surface modifier solution to obtain a solid film of a quantum dot material modified by a surface modifier;
- the surface modifying agent is dissolved in a solvent such as methanol, and stirred at room temperature to obtain a surface modifier solution.
- a solvent such as methanol
- the immersion time is 1 to 3 minutes, for example, 2 minutes
- the quantum dot solid film is taken out, and then dried once at 1000 rpm for 10 s, and then anhydrous methanol is taken out.
- the surface modification agent-modified quantum dot solid film was obtained by washing twice at 2000 rpm for 20 s.
- the surface modifier may be (3-aminoethyl)triethoxysilane, (3-aminopropyl)triethoxysilane, (3-aminobutyl)triethoxysilane, ( 3-aminoethyl)tripropoxysilane, (3-aminopropyl)tripropoxysilane, (3-aminobutyl)tripropoxysilane, (3-aminoethyl)tributyloxysilane One or more of (3-aminopropyl)tributoxysilane, (3-aminobutyl)tributoxysilane, and the like. More preferably, the surface modifier is (3-aminopropyl)triethoxysilane (APTES).
- APTES (3-aminopropyl)triethoxysilane
- Step S300 providing a metal nanoparticle seed solution, depositing the metal nanoparticle seed solution on a solid film of a surface modifier-modified quantum dot material by a solution method, and obtaining a solid film of a quantum dot material having a metal nanoparticle seed adsorbed on the surface thereof.
- Step S300 is specifically: the metal nanoparticle seed is formulated into a metal nanoparticle seed solution, and then the metal nanoparticle seed solution is deposited on the solid film of the surface modifier-modified quantum dot material by a solution method, and dried to obtain a layer adsorbed on the surface.
- Quantum dot material solid film of metal nanoparticle seeds may be, but not limited to, spin coating, immersion pulling, printing, printing, inkjet, spray coating, roll coating, knife coating, casting, electrolytic deposition, slitting.
- the metal nanoparticle seed may be one of Au nanoparticles, Ag nanoparticles, Cu nanoparticles, and the like.
- the metal nanoparticle seed is an Au nanoparticle.
- Step S400 providing a precursor of the metal nanowire, immersing the solid film of the quantum dot material adsorbed with a metal nanoparticle seed in a precursor of the metal nanowire to grow the metal nanowire, to obtain the quantum dot solid film .
- Step S400 is specifically: immersing the solid film of the quantum dot material adsorbed with a metal nanoparticle seed in a precursor liquid containing the metal nanowire, and the mixed liquid is in an inert gas protection state and continuously stirring to grow the metal nanowire.
- the growth time is 15 to 25 minutes (for example, 20 minutes), and a solid film of a quantum dot material having a layer of metal nanowires is obtained, that is, the quantum dot solid film is obtained.
- the precursor of the metal nanowire may be one of a precursor of Au nanowires, a precursor of Ag nanowires, a precursor of Cu nanowires, and the like.
- the precursor of the Au nanowire comprises deionized water (H 2 O), methanol (CH 3 OH), HAuCl 4 , vitamin C and 4-mercaptobenzoic acid (MBA); precursor of the Ag nanowire Containing deionized water (H 2 O), ethylene glycol (MEG), silver nitrate (AgNO 3 ), and polyvinylpyrrolidone (PVP);
- the precursor of the Cu nanowire includes sodium hydroxide (NaOH), copper nitrate ( CuNO 3 ), ethylenediamine and hydrazine hydrate.
- the invention also provides a quantum dot solid film, wherein the quantum dot solid film comprises a quantum dot material solid film, and the quantum dot material solid film surface is grown with a layer of metal nanowires.
- the quantum dot material solid film with a metal nanowire grown in the invention can effectively transfer the charge and also improve the overall performance of the device.
- the present invention also provides a quantum dot light emitting diode comprising a cathode and an anode, and a quantum dot solid film according to the present invention is disposed between the cathode and the anode.
- the anode, the hole injection layer, the hole transport layer, the quantum dot solid film, the electron transport layer, and the cathode as described above are laminated in this order.
- the quantum dot solid-state film of the present invention as described above is used as the quantum dot light-emitting layer, which can effectively improve the overall performance of the device.
- the anode of the present invention may be selected from one of indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), antimony doped tin oxide (ATO), and aluminum doped zinc oxide (AZO). Or a variety.
- ITO indium doped tin oxide
- FTO fluorine doped tin oxide
- ATO antimony doped tin oxide
- AZO aluminum doped zinc oxide
- the hole injection layer of the present invention may be poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid (PEDOT:PSS), copper phthalocyanine (CuPc), 2,3,5,6 -tetrafluoro-7,7',8,8'-tetracyanoquinone-dimethane (F4-TCNQ), 2,3,6,7,10,11-hexacyano-1,4,5,8, One or more of 9,12-hexaazatriphenylene (HATCN), a doped or undoped transition metal oxide, a doped or undoped metal sulfur-based compound; wherein the transition metal is oxidized
- the material may be, but not limited to, one or more of MoO 3 , VO 2 , WO 3 , CrO 3 , CuO or a mixture thereof; the metal sulfur-based compound may be, but not limited to, MoS 2 , MoSe 2 , WS 2 One or more of WSe 2 , Cu
- the hole transport layer material of the present invention may be selected from organic materials having hole transporting ability, and may be, but not limited to, poly(9,9-dioctylfluorene-CO-N-(4-butylbenzene).
- the hole transport layer material may also be selected from a hole transporting ability.
- the inorganic material may be, but not limited to, one or more of NiO, MoO 3 , VO 2 , WO 3 , CrO 3 , CuO, MoS 2 , MoSe 2 , WS 2 , WSe 2 , CuS, or a mixture thereof.
- the electron transport layer material of the present invention may be, but not limited to, n-type ZnO, TiO 2 , SnO, Ta 2 O 3 , AlZnO, ZnSnO, InSnO, Alq3, Ca, Ba, CsF, LiF, CsCO 3 One or more; preferably, the electron transport layer is n-type ZnO or n-type TiO 2 ;
- the cathode of the present invention may be, but not limited to, one or more of various conductive carbon materials, conductive metal oxide materials, and metal materials; wherein the conductive carbon material may be, but not limited to, doped or undoped One or more of carbon nanotubes, doped or undoped graphene, doped or undoped graphene oxide, C60, graphite, carbon fiber, multiple carbon, or a mixture thereof; conductive metal oxide material It may be, but not limited to, one or more of ITO, FTO, ATO, AZO, or a mixture thereof; the metal material may be, but not limited to, one of Al, Ag, Cu, Mo, Au, or an alloy thereof Or a plurality of; wherein, in the metal material, the morphology may be, but not limited to, one or more of a dense film, a nanowire, a nanosphere, a nanorod, a nanocone, a nano hollow sphere, or a mixture thereof;
- the cathode is Ag or Al.
- the present invention also provides a method for preparing a quantum dot light emitting diode as described above, which comprises:
- Step R preparing a hole injection layer on the anode containing the substrate
- Step S preparing a hole transport layer on the hole injection layer
- Step T preparing a quantum dot light-emitting layer on the hole transport layer;
- the quantum dot light-emitting layer is a quantum dot solid film as described above;
- Step U preparing an electron transport layer on the quantum dot light-emitting layer, and vapor-depositing the cathode on the electron transport layer to obtain a quantum dot light-emitting diode.
- the quantum dot light emitting diode of the present invention may be partially packaged, fully packaged, or unpackaged.
- the preparation method of the above functional layers of the present invention may be a chemical method or a physical method, wherein the physical method may be, but not limited to, a spin coating method, a spray coating method, a roll coating method, a printing method, a printing method, an inkjet method, a knife coating method, Dipping and pulling method, soaking method, casting method, slit coating method, strip coating method, thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition One or more of a method, an atomic layer deposition method, a pulsed laser deposition method; the chemical method may be, but not limited to, a chemical vapor deposition method, a continuous ion layer adsorption and reaction method, an anodization method, an electrolytic deposition method, a coprecipitation method One or more of them.
- the physical method may be, but not limited to, a spin coating method, a spray coating method,
- the present invention is not limited to the quantum dot light emitting diode of the above structure, and may further include an interface functional layer or an interface modification layer, including but not limited to an electron blocking layer, a hole blocking layer, an electrode modifying layer, and an isolation protective layer. One or more.
- the present invention is not limited to the preparation of the quantum dot light emitting diode of the above positive structure, and a quantum dot light emitting diode of an inverted structure can also be prepared.
- the inverse-structured quantum dot light emitting diode may further include an interface functional layer or an interface modification layer, including but not limited to one or more of an electron blocking layer, a hole blocking layer, an electrode modifying layer, and an isolating protective layer.
- the present invention will be described in detail below by taking a precursor of red oil-soluble quantum dots CdSe/ZnS, APTES, Au nanoparticles, and synthetic Au nanowires as an example.
- TOP trioctylphosphorus
- the Au nanoparticle prepared into a 10 mg/ml solution was spin-coated on the solid film containing the APTES-modified quantum dot material prepared in the above 2.3), and then the ruthenium film was rotated at 5000 rpm to obtain only one layer of Au nanoparticles covering the quantum. Point material on the solid film.
- a solid film of a quantum dot material containing only one layer of Au nanoparticle seeds is immersed in a precursor solution containing synthetic Au nanoparticles (60 ml of water, 1 ml of 1% hydrated HAuCl 4 ⁇ 3H 2 O, 1 ml of 1% hydration)
- the mixture of sodium citrate and 1 ml of 0.075% NaBH 4 was subjected to argon gas protection and stirred for 20 min to grow Au nanowires to obtain a solid film of quantum dot material on which Au nanowires were grown, thereby obtaining the quantum dot solid state.
- the present invention provides a quantum dot solid film, a preparation method thereof and a quantum dot light emitting diode.
- the present invention first prepares a quantum dot into a quantum dot material solid film, and uses a surface modifier to perform a quantum dot material solid film.
- metal nanoparticles such as Au nanoparticles
- the solid film of the quantum dot material adsorbed with the metal nanoparticle seeds is placed in the precursor of the metal nanowire.
- the growth of the metal nanowires is performed to finally obtain a solid film of a quantum dot material in which a layer of metal nanowires is grown, that is, the quantum dot solid film.
- Quantum dot light emitting diode (QLED) devices can be further fabricated using this quantum dot solid state film.
- the quantum dot material solid film grown by this method and having a layer of metal nanowires can rapidly charge and improve the overall performance of the device.
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Abstract
本发明公开一种量子点固态膜及其制备方法与量子点发光二极管,方法包括步骤:提供量子点溶液,在基板上制备量子点材料固态膜;将所述量子点材料固态膜浸泡在表面修饰剂溶液中,得到表面修饰剂修饰的量子点材料固态膜;提供金属纳米颗粒种子溶液,将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点固态材料膜上,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜;提供金属纳米线的前驱液,将所述吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长,得到所述量子点固态膜。利用本发明方法得到的量子点固态膜能够有效快速对电荷进行传输,同时也会提高器件的整体性能。
Description
本发明涉及发光二极管技术领域,尤其涉及一种量子点固态膜及其制备方法与量子点发光二极管。
量子点(QD)作为本世纪研究比较热的领域,尤其针对发光量子点由于其带隙可调、色纯度好、稳定性好等特点。
目前量子点的应用领域也比较广泛,尤其是量子点发光二极管,量子点显示有望成为下一代的新型显示技术。然而在有关目前的量子点发光二极管显示技术中,量子点膜的制备以及量子点器件的组装非常重要,在量子点的发光二极管中会涉及到电荷注入平衡问题,电子和空穴的注入不平衡会影响整个器件的发光效率以及寿命等。调节量子点固态膜的电子注入平衡时,一般采用的是调节电子传输层的能级势垒、量子点表面的配体长度的变化。然而这些还是不能有效快速的对电荷进行传输。
因此,现有技术还有待于改进和发展。
发明内容
鉴于上述现有技术的不足,本发明的目的在于提供一种量子点固态膜及其制备方法与量子点发光二极管,旨在解决现有量子点固态膜不能有效快速对电荷进行传输的问题。
本发明的技术方案如下:
一种量子点固态膜的制备方法,其中,包括:
提供量子点溶液,在基板上制备量子点材料固态膜;
将所述量子点材料固态膜浸泡在表面修饰剂溶液中,得到表面修饰剂修饰的量子点材料固态膜;
提供金属纳米颗粒种子溶液,将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点固态材料膜上,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜;
提供金属纳米线的前驱液,将所述吸附有一层金属纳米颗粒种子的量子点材 料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长,得到所述量子点固态膜。
所述的量子点固态膜的制备方法,其中,包括:
将量子点配制成量子点溶液,然后将量子点溶液沉积于基板上,并干燥,制成量子点材料固态膜;
将表面修饰剂配制成表面修饰剂溶液,将制成的量子点材料固态膜浸泡在表面修饰剂溶液中,然后干燥、清洗,得到表面修饰剂修饰的量子点材料固态膜;
将金属纳米颗粒种子配制成金属纳米颗粒种子溶液,然后将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点固态材料膜上,并干燥,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜;
将表面吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长,得到所述量子点固态膜。
所述的量子点固态膜的制备方法,其中,所述量子点溶液中的量子点为二元相量子点、三元相量子点、四元相量子点。
所述的量子点固态膜的制备方法,其中,二元相量子点为CdS、CdSe、CdTe、InP、AgS、PbS、PbSe、HgS中的一种或多种;三元相量子点为Zn
XCd
1-XS、Cu
XIn
1-XS、Zn
XCd
1-XSe、Zn
XSe
1-XS、Zn
XCd
1-XTe、PbSe
XS
1-X中的一种或多种;四元相量子点为Zn
XCd
1-XS/ZnSe、Cu
XIn
1-XS/ZnS、Zn
XCd
1-XSe/ZnS、CuInSeS、Zn
XCd
1-XTe/ZnS、PbSe
XS
1-X/ZnS中的一种或多种。
所述的量子点固态膜的制备方法,其中,所述表面修饰剂为(3-氨乙基)三乙氧基硅烷、(3-氨丙基)三乙氧基硅烷、(3-氨丁基)三乙氧基硅烷、(3-氨乙基)三丙氧基硅烷、(3-氨丙基)三丙氧基硅烷、(3-氨丁基)三丙氧基硅烷、(3-氨乙基)三丁氧基硅烷、(3-氨丙基)三丁氧基硅烷、(3-氨丁基)三丁氧基硅烷中的一种或多种。
所述的量子点固态膜的制备方法,其中,所述金属纳米颗粒种子为Au纳米颗粒、Ag纳米颗粒、Cu纳米颗粒中的一种。
所述的量子点固态膜的制备方法,其中,金属纳米线的前驱液为Au纳米线的前驱液、Ag纳米线的前驱液、Cu纳米线的前驱液中的一种。
所述的量子点固态膜的制备方法,其中,所述Au纳米线的前驱液包含H
2O、 CH
3OH、HAuCl
4、维生素C和MBA;所述Ag纳米线的前驱液包含H
2O、MEG、AgNO
3和PVP;所述Cu纳米线的前驱液包含NaOH、CuNO
3、乙二胺和水合肼。
一种量子点固态膜,其中,所述量子点固态膜包括量子点材料固态膜,所述量子点材料固态膜表面生长有一层金属纳米线。
一种量子点发光二极管,其中,所述量子点发光二极管包括阴极和阳极,所述阴极和阳极之间设置有本发明所述的量子点固态膜。
所述的量子点发光二极管,其中,包括依次叠层结合的阳极、空穴注入层、空穴传输层、量子点固态膜、电子传输层及阴极。
有益效果:本发明是先把量子点制备成量子点材料固态膜,利用表面修饰剂对量子点材料固态膜进行修饰,然后再把金属纳米颗粒种子沉积在修饰过的量子点材料固态膜上,最后将吸附有金属纳米颗粒种子的量子点固态膜置于金属纳米线的前驱液中进行金属纳米线的生长,最终得到生长有一层金属纳米线的量子点材料固态膜,即得到所述量子点固态膜。利用此量子点固态膜可以进一步制备QLED器件。利用这种方法得到的生长有一层金属纳米线的量子点材料固态膜能够有效快速对电荷进行传输,同时也会提高器件的整体性能。
图1为本发明的一种量子点固态膜的制备方法较佳实施例的流程图。
图2为本发明实施例的量子点固态膜制备过程示意图。
本发明提供一种量子点固态膜及其制备方法与量子点发光二极管,为使本发明的目的、技术方案及效果更加清楚、明确,以下对本发明进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。
图1为本发明的一种量子点固态膜的制备方法较佳实施例的流程图,如图所示,其包括:
步骤S100、提供量子点溶液,在基板上制备量子点材料固态膜;
步骤S100具体为,将量子点干燥称重后溶解于甲苯或氯仿等溶剂中,配制成量子点溶液,其中量子点溶液的浓度为1~50mg/mL,优选的浓度为15mg/mL。然后通过溶液法将配制成的量子点溶液沉积于基板(如ITO玻璃)上,并干燥,制成量子点材料固态膜。本发明所述溶液法可以为但不限于旋涂法、浸渍提拉法、 打印法、印刷法、喷墨法、喷涂法、滚涂法、刮涂法、浇铸法、电解沉积法、狭缝式涂布法、条状涂布法中的一种或多种。
优选地,所述量子点可以为二元相量子点、三元相量子点、四元相量子点等中的一种或多种。其中,二元相量子点可以为CdS、CdSe、CdTe、InP、AgS、PbS、PbSe、HgS等中的一种或多种;三元相量子点可以为Zn
XCd
1-XS、Cu
XIn
1-XS、Zn
XCd
1-XSe、Zn
XSe
1-XS、Zn
XCd
1-XTe、PbSe
XS
1-X等中的一种或多种;四元相量子点可以为Zn
XCd
1-XS/ZnSe、Cu
XIn
1-XS/ZnS、Zn
XCd
1-XSe/ZnS、CuInSeS、Zn
XCd
1-XTe/ZnS、PbSe
XS
1-X/ZnS等中的一种或多种。
步骤S200、将所述量子点材料固态膜浸泡在表面修饰剂溶液中,得到表面修饰剂修饰的量子点材料固态膜;
步骤S200具体为,将表面修饰剂溶解在甲醇等溶剂中,并室温下搅拌均匀,制成表面修饰剂溶液。将制成的量子点材料固态膜浸泡在表面修饰剂溶液中一定时间后,优选浸泡时间为1~3min,如2min,取出量子点固态膜,然后采用1000rpm10s空转一次进行干燥,再抽取无水甲醇采用2000rpm 20s清洗两次,得到表面修饰剂修饰的量子点固态膜。
优选地,所述表面修饰剂可以为(3-氨乙基)三乙氧基硅烷、(3-氨丙基)三乙氧基硅烷、(3-氨丁基)三乙氧基硅烷、(3-氨乙基)三丙氧基硅烷、(3-氨丙基)三丙氧基硅烷、(3-氨丁基)三丙氧基硅烷、(3-氨乙基)三丁氧基硅烷、(3-氨丙基)三丁氧基硅烷、(3-氨丁基)三丁氧基硅烷等中的一种或多种。更优选地,所述表面修饰剂为(3-氨丙基)三乙氧基硅烷(APTES)。
步骤S300、提供金属纳米颗粒种子溶液,将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点材料固态膜上,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜。
步骤S300具体为,将金属纳米颗粒种子配制成金属纳米颗粒种子溶液,然后将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点材料固态膜上,并干燥,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜。本发明所述溶液法可以为但不限于旋涂法、浸渍提拉法、打印法、印刷法、喷墨法、喷涂法、滚涂法、刮涂法、浇铸法、电解沉积法、狭缝式涂布法、条状涂布法中的一种或多种。
步骤S300中,所述金属纳米颗粒种子可以为Au纳米颗粒、Ag纳米颗粒、Cu纳米颗粒等中的一种。优选地,所述金属纳米颗粒种子为Au纳米颗粒。
步骤S400、提供金属纳米线的前驱液,将所述吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长,得到所述量子点固态膜。
步骤S400具体为,将所述吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在含有金属纳米线的前驱液中,混合液处于惰性气体保护并不断搅拌的状态进行金属纳米线的生长,生长时间为15~25min(如20min),得到生长有一层金属纳米线的量子点材料固态膜,即得到所述量子点固态膜。
优选地,所述金属纳米线的前驱液可以为Au纳米线的前驱液、Ag纳米线的前驱液、Cu纳米线的前驱液等中的一种。其中,所述Au纳米线的前驱液包含去离子水(H
2O)、甲醇(CH
3OH)、HAuCl
4、维生素C和4-巯基苯甲酸(MBA);所述Ag纳米线的前驱液包含去离子水(H
2O)、乙二醇(MEG)、硝酸银(AgNO
3)和聚乙烯吡咯烷酮(PVP);所述Cu纳米线的前驱液包含氢氧化钠(NaOH)、硝酸铜(CuNO
3)、乙二胺和水合肼。
本发明还提供一种量子点固态膜,其中,所述量子点固态膜包括量子点材料固态膜,所述量子点材料固态膜表面生长有一层金属纳米线。本发明生长有一层金属纳米线的量子点材料固态膜能够有效快速对电荷进行传输,同时也会提高器件的整体性能。
本发明还提供一种量子点发光二极管,所述量子点发光二极管包括阴极和阳极,所述阴极和阳极之间设置有本发明所述的量子点固态膜。
具体的,包括依次叠层结合的阳极、空穴注入层、空穴传输层、如上所述的量子点固态膜、电子传输层及阴极。在QLED器件制备过程中,采用本发明如上所述的量子点固态膜作为量子点发光层,能够有效提高器件的整体性能。
优选地,本发明所述阳极可选自铟掺杂氧化锡(ITO)、氟掺杂氧化锡(FTO)、锑掺杂氧化锡(ATO)、铝掺杂氧化锌(AZO)中的一种或多种。
优选地,本发明所述空穴注入层可以为聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸(PEDOT:PSS)、酞菁铜(CuPc)、2,3,5,6-四氟-7,7',8,8'-四氰醌-二甲烷(F4-TCNQ)、2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲(HATCN)、掺杂或非掺杂过渡金 属氧化物、掺杂或非掺杂金属硫系化合物中的一种或多种;其中,所述过渡金属氧化物可以为但不限于MoO
3、VO
2、WO
3、CrO
3、CuO或它们的混合物中的一种或多种;所述金属硫系化合物可以为但不限于MoS
2、MoSe
2、WS
2、WSe
2、CuS或它们的混合物中的一种或多种。
优选地,本发明所述空穴传输层材料可选自具有空穴传输能力的有机材料,可以为但不限于聚(9,9-二辛基芴-CO-N-(4-丁基苯基)二苯胺)(TFB)、聚乙烯咔唑(PVK)、聚(N,N'双(4-丁基苯基)-N,N'-双(苯基)联苯胺)(poly-TPD)、聚(9,9-二辛基芴-共-双-N,N-苯基-1,4-苯二胺)(PFB)、4,4’,4”-三(咔唑-9-基)三苯胺(TCTA)、4,4'-二(9-咔唑)联苯(CBP)、N,N’-二苯基-N,N’-二(3-甲基苯基)-1,1’-联苯-4,4’-二胺(TPD)、N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4’-二胺(NPB)、掺杂石墨烯、非掺杂石墨烯、C60或它们的混合物中的一种或多种。所述空穴传输层材料还可选自具有空穴传输能力的无机材料,可以为但不限于NiO、MoO
3、VO
2、WO
3、CrO
3、CuO、MoS
2、MoSe
2、WS
2、WSe
2、CuS或它们的混合物中的一种或多种。
优选地,本发明所述电子传输层材料可以为但不限于n型ZnO、TiO
2、SnO、Ta
2O
3、AlZnO、ZnSnO、InSnO、Alq3、Ca、Ba、CsF、LiF、CsCO
3中的一种或多种;优选地,所述电子传输层为n型ZnO或n型TiO
2;
优选地,本发明所述阴极可以为但不限于各种导电碳材料、导电金属氧化物材料、金属材料中的一种或多种;其中导电碳材料可以为但不限于掺杂或非掺杂碳纳米管、掺杂或非掺杂石墨烯、掺杂或非掺杂氧化石墨烯、C60、石墨、碳纤维、多空碳、或它们的混合物中的一种或多种;导电金属氧化物材料可以为但不限于ITO、FTO、ATO、AZO、或它们的混合物中的一种或多种;金属材料可以为但不限于Al、Ag、Cu、Mo、Au、或它们的合金中的一种或多种;其中所述金属材料中,其形态可以为但不限于致密薄膜、纳米线、纳米球、纳米棒、纳米锥、纳米空心球、或它们的混合物中的一种或多种;优选地,所述阴极为Ag或Al。
基于上述量子点发光二极管,本发明也提供一种如上所述的量子点发光二极管的制备方法,其包括:
步骤R、在含有衬底的阳极上制备空穴注入层;
步骤S、在空穴注入层上制备空穴传输层;
步骤T、在空穴传输层上制备量子点发光层;所述量子点发光层为如上所述的量子点固态膜;
步骤U、在量子点发光层上制备电子传输层,并蒸镀阴极于电子传输层上,得到量子点发光二极管。
本发明量子点发光二极管可以部分封装、全封装、或不封装。
本发明上述各功能层的制备方法可以是化学法或物理法,其中物理法可以为但不限于旋涂法、喷涂法、滚涂法、打印法、印刷法、喷墨法、刮涂法、浸渍提拉法、浸泡法、浇铸法、狭缝式涂布法、条状涂布法、热蒸发镀膜法、电子束蒸发镀膜法、磁控溅射法、多弧离子镀膜法、物理气相沉积法、原子层沉积法、脉冲激光沉积法中的一种或多种;化学法可以为但不限于化学气相沉积法、连续离子层吸附与反应法、阳极氧化法、电解沉积法、共沉淀法中的一种或多种。
需说明的是,本发明不限于上述结构的量子点发光二极管,还可进一步包括界面功能层或界面修饰层,包括但不限于电子阻挡层、空穴阻挡层、电极修饰层、隔离保护层中的一种或多种。
需说明的是,本发明不限于制备上述正型结构的量子点发光二极管,还可以制备反型结构的量子点发光二极管。且反型结构的量子点发光二极管还可进一步包括界面功能层或界面修饰层,包括但不限于电子阻挡层、空穴阻挡层、电极修饰层、隔离保护层中的一种或多种。
结合图2所示,下面以利用红色油溶性量子点CdSe/ZnS、APTES、Au纳米颗粒、合成Au纳米线的前躯体为例对本发明进行详细说明。
1、红色油溶性量子点CdSe/ZnS的制备步骤如下
1)、油酸镉{Cd(OA)
2}与油酸锌{Zn(OA)
2}前躯体的制备:
取0.8mmol的氧化镉(CdO)、6mmol的醋酸锌{Zn(Ac)
2}、8ml的油酸(OA)、15ml的十八烯(ODE)加入到三口烧瓶中,先常温排气10min后加热到170℃排气60min,然后维持在170℃。
2)硒(Se)前躯体的制备:
称取4mmol的Se加入到4ml的三辛基氧磷(TOP)中,加热到170℃维持30min,然后降温到140℃。
3)硫(S)前躯体的制备:
称4mmol的S加入到6ml的三辛基氧磷(TOP)中,加热到170℃维持30min,然后降温到140℃。
4)将1)中的混合液温度升高到300℃后,取2ml的硒(Se)前躯体快速注入到烧瓶内反应10min,然后再次抽取2ml的硫(S)源注入到反应混合液中反应30min,最终得到CdSe/ZnS红色量子点,待混合液温度冷却至室温后,通过离心分离、清洗得到红色油溶性量子点CdSe/ZnS,并对其做干燥处理,其表面的配体是油酸(OA)。
2、APTES修饰红色CdSe/ZnS量子点材料固态膜的制备:
1)将制备好的红色油溶性量子点CdSe/ZnS稀释成15mg/ml的CdSe/ZnS量子点溶液,然后采用3000rpm 30s旋涂在干净的ITO玻璃片上,接着在2000rpm20s空转两次干燥量子点材料固态膜。
2)取3mmol的APTES溶解在10ml的甲醇当中,然后室温均匀搅拌30min,备用。
3)将制备好的CdSe/ZnS量子点材料固态膜浸泡在含有APTES的甲醇溶液中2min,然后取出量子点材料固态膜,先采用1000rpm 10s空转一次进行干燥,然后再抽取100微升的无水甲醇采用2000rpm 20s进行两次清洗。
3、含有Au纳米颗粒的量子点材料固态膜的制备:
金(Au)纳米颗粒的制备:在油浴条件下,向100ml的三口烧瓶中加入60ml的水和1ml的1%(wt%)的水合HAuCl
4·3H
2O,在通氩气保护的条件下充分搅拌。过1min后,加入1ml的1%(wt%)的水合柠檬酸钠。添加1min之后,再加入1ml的0.075%(wt%)NaBH
4,将溶液不断搅拌5min,得到金纳米颗粒,得到的样品避光低温(4℃左右)保存。
将Au纳米颗粒制备成10mg/ml的溶液旋涂在上述2.3)制备的含有APTES修饰过的量子点材料固态膜上,然后进行甩膜,转速为5000rpm,得到只有一层Au纳米颗粒覆盖在量子点材料固态膜上。
生长有Au纳米线的量子点材料固态膜的制备:
将只含有一层Au纳米颗粒种子的量子点材料固态膜浸泡在含有合成Au纳米颗粒的前躯体溶液中(60ml水、1ml的1%的水合HAuCl
4·3H
2O、1ml的1% 的水合柠檬酸钠、1ml的0.075%NaBH
4)混合液处于氩气保护并且不断搅拌的状态20min进行Au纳米线的生长,得到生长有Au纳米线的量子点材料固态膜,即得到所述量子点固态膜。
综上所述,本发明提供的一种量子点固态膜及其制备方法与量子点发光二极管,本发明先把量子点制备成量子点材料固态膜,利用表面修饰剂对量子点材料固态膜进行修饰,然后再把金属纳米颗粒(如:Au纳米颗粒)沉积在修饰过的量子点材料固态膜上,最后将吸附有金属纳米颗粒种子的量子点材料固态膜置于金属纳米线的前驱液中进行金属纳米线的生长,最终得到生长有一层金属纳米线的量子点材料固态膜,即所述量子点固态膜。利用此量子点固态膜可以进一步制备量子点发光二极管(QLED)器件。利用这种方法得到的生长有一层金属纳米线的量子点材料固态膜能够对电荷进行快速,进而提高器件的整体性能。
应当理解的是,本发明的应用不限于上述的举例,对本领域普通技术人员来说,可以根据上述说明加以改进或变换,所有这些改进和变换都应属于本发明所附权利要求的保护范围。
Claims (15)
- 一种量子点固态膜的制备方法,其特征在于,包括:提供量子点溶液,在基板上制备量子点材料固态膜;将所述量子点材料固态膜浸泡在表面修饰剂溶液中,得到表面修饰剂修饰的量子点材料固态膜;提供金属纳米颗粒种子溶液,将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点材料固态膜上,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜;提供金属纳米线的前驱液,将所述吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长,得到所述量子点固态膜。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,包括:将量子点配制成量子点溶液,然后将量子点溶液沉积于基板上,并干燥,制成量子点材料固态膜;将表面修饰剂配制成表面修饰剂溶液,将制成的量子点材料固态膜浸泡在表面修饰剂溶液中,然后干燥、清洗,得到表面修饰剂修饰的量子点材料固态膜;将金属纳米颗粒种子配制成金属纳米颗粒种子溶液,然后将金属纳米颗粒种子溶液采用溶液法沉积在表面修饰剂修饰的量子点材料固态膜上,并干燥,得到表面吸附有一层金属纳米颗粒种子的量子点材料固态膜;将表面吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长,得到所述量子点固态膜。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,所述量子点溶液中的量子点为二元相量子点、三元相量子点、四元相量子点中的一种或多种。
- 根据权利要求3所述的量子点固态膜的制备方法,其特征在于,二元相量子点为CdS、CdSe、CdTe、InP、AgS、PbS、PbSe、HgS中的一种或多种;三元相量子点为Zn XCd 1-XS、Cu XIn 1-XS、Zn XCd 1-XSe、Zn XSe 1-XS、Zn XCd 1-XTe、PbSe XS 1-X中的一种或多种;四元相量子点为Zn XCd 1-XS/ZnSe、Cu XIn 1-XS/ZnS、Zn XCd 1-XSe/ZnS、CuInSeS、Zn XCd 1-XTe/ZnS、PbSe XS 1-X/ZnS中的一种或多种。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,所述量 子点溶液的浓度为1~50mg/mL。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,所述表面修饰剂为(3-氨乙基)三乙氧基硅烷、(3-氨丙基)三乙氧基硅烷、(3-氨丁基)三乙氧基硅烷、(3-氨乙基)三丙氧基硅烷、(3-氨丙基)三丙氧基硅烷、(3-氨丁基)三丙氧基硅烷、(3-氨乙基)三丁氧基硅烷、(3-氨丙基)三丁氧基硅烷、(3-氨丁基)三丁氧基硅烷中的一种或多种。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,将制成的量子点材料固态膜浸泡在表面修饰剂溶液中1~3min。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,所述金属纳米颗粒种子为Au纳米颗粒、Ag纳米颗粒、Cu纳米颗粒中的一种。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,所述金属纳米线的前驱液为Au纳米线的前驱液、Ag纳米线的前驱液、Cu纳米线的前驱液中的一种。
- 根据权利要求9所述的量子点固态膜的制备方法,其特征在于,所述Au纳米线的前驱液包含H 2O、CH 3OH、HAuCl 4、维生素C和MBA;所述Ag纳米线的前驱液包含H 2O、MEG、AgNO 3和PVP;所述Cu纳米线的前驱液包含NaOH、CuNO 3、乙二胺和水合肼。
- 根据权利要求1所述的量子点固态膜的制备方法,其特征在于,将所述吸附有一层金属纳米颗粒种子的量子点材料固态膜浸泡在金属纳米线的前驱液中进行金属纳米线的生长的时间为15~25min。
- 一种量子点固态膜,其特征在于,所述量子点固态膜包括量子点材料固态膜,所述量子点材料固态膜表面生长有一层金属纳米线。
- 根据权利要求12所述的量子点固态膜,其特征在于,所述金属纳米线为Au纳米线、Ag纳米线或Cu纳米线。
- 一种量子点发光二极管,其特征在于,所述量子点发光二极管包括阴极和阳极,所述阴极和阳极之间设置有如权利要求12-13任一项所述的量子点固态膜。
- 根据权利要求14所述的量子点发光二极管,其特征在于,包括依次叠层结合的阳极、空穴注入层、空穴传输层、量子点固态膜、电子传输层及阴极。
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