WO2018152894A1 - 发光二极管显示器及其制作方法 - Google Patents

发光二极管显示器及其制作方法 Download PDF

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WO2018152894A1
WO2018152894A1 PCT/CN2017/076779 CN2017076779W WO2018152894A1 WO 2018152894 A1 WO2018152894 A1 WO 2018152894A1 CN 2017076779 W CN2017076779 W CN 2017076779W WO 2018152894 A1 WO2018152894 A1 WO 2018152894A1
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layer
anode
light emitting
emitting diode
disposed
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French (fr)
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韩佰祥
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/519,838 priority Critical patent/US10249602B2/en
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    • H—ELECTRICITY
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
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    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H10K59/1275—Electrical connections of the two substrates
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a light emitting diode display and a method of fabricating the same.
  • LED display Light Emitting Diode display
  • LCD Liquid Crystal Display
  • PDP Plasma Display Panel
  • LED display Light Emitting Diode display
  • the LED display has the advantages of high luminous efficiency, long life and low energy consumption, and has been widely applied to outdoor display cards and large outdoor billboards, and also exists in home television or computer displays.
  • the LED display is a display screen for displaying various information such as text, graphics, images, animations, quotes, videos, and video signals by controlling the display mode of the semiconductor light-emitting diodes.
  • LEDs were only used as miniature indicators, and they were used in high-end equipment such as computers, audio and video recorders. With the continuous advancement of large-scale integrated circuits and computer technology, LED displays are rapidly emerging and gradually expanding into stock market stock machines. Digital cameras, PDAs, and mobile phones.
  • LED display integrates microelectronic technology, computer technology and information processing, with its bright color, wide dynamic range, high brightness, high definition, low working voltage, low power consumption, long life, impact resistance, colorful and working.
  • the advantages of stability and reliability have become the most advantageous next-generation display media.
  • LED display has been widely used in large squares, commercials, stadiums, information dissemination, news release, securities trading, etc., to meet the needs of different environments.
  • the light emitting diode display includes a base substrate 100, a thin film transistor (TFT) layer 200 disposed on the base substrate 100, and a first planar layer 300 on the TFT layer 200, a first anode 400 disposed on the first planar layer 300, and a second planar layer 500 disposed on the first anode 400 and the first planar layer 300 a first via 510 disposed on the second planar layer 500 and exposing the first anode 400, and a light emitting diode 600 disposed in the first via 510, disposed in the first via 510 is located around the light emitting diode 600 and located on the first anode 400 a cathode isolation layer 720, and a first cathode 730 disposed on the cathode isolation layer 720, the light emitting diode 600 and the second planar layer 500;
  • TFT thin film transistor
  • the light emitting diode 600 includes a light emitting body 610 and a second anode 620 and a second cathode 630 respectively connected to the two ends of the light emitting body 610.
  • the second anode 620 is connected to the first anode 400.
  • the second cathode 630 is in contact with the first cathode 730, and the first anode 400 and the first cathode 730 are separated by the cathode isolation layer 720.
  • the manufacturing method of the above LED display comprises:
  • Step 1' providing a TFT backplane 800 and a light emitting diode 600;
  • the TFT backplane 800 includes a base substrate 100, a TFT layer 200 disposed on the base substrate 100, a first planar layer 300 disposed on the TFT layer 200, and a first planar layer 300. a first anode 400, a second planar layer 500 disposed on the first anode 400 and the first planar layer 300, and a second planar layer 500 disposed on the second planar layer 500 and exposing the first anode 400 First via 510;
  • the light emitting diode 600 includes a light emitting lamp body 610 and a second anode 620 and a second cathode 630 respectively connected to the two ends of the light emitting lamp body 610;
  • Step 2 ′ transferring the LED 600 into the first via 510 of the TFT backplane 800, and soldering the second anode 620 of the LED 600 to the TFT backplane 800
  • the first anodes 400 are connected together;
  • Step 3' forming a cathode isolation layer 720 around the light emitting diode 600 and located on the first anode 400 in the first via 510 of the TFT backplane 800;
  • Step 4' forming a first cathode 730 on the cathode isolation layer 720, the light emitting diode 600, and the second planar layer 500, the first cathode 730 being in contact with the second cathode 630.
  • the soldering is not good.
  • the case where the second anode 620 is in poor contact with the first anode 400 causes the light emission of the light emitting diode 600 to be affected.
  • Step 3 of the method for fabricating the above-mentioned LED display generally adopts an organic material coating process in combination with a yellow light process to form a cathode isolation layer 720.
  • the yellow light process requires a photomask, thereby increasing the cost of the mask and causing production cost. high.
  • An object of the present invention is to provide a method for fabricating a light-emitting diode display, which can avoid the problem of poor contact between the second anode and the first anode due to poor soldering, so that the light-emitting performance of the light-emitting diode is stable, and the display quality of the LED display is improved.
  • Another object of the present invention is to provide a light-emitting diode display, which has stable light-emitting performance and good display quality.
  • the present invention first provides a method for fabricating an LED display, comprising the following steps:
  • Step 1 Providing a TFT backplane and a light emitting diode
  • the TFT backplane includes a base substrate, a TFT layer disposed on the base substrate, a first planar layer disposed on the TFT layer, and a first anode disposed on the first planar layer. a second planar layer on the first anode and the first planar layer, and a first via hole disposed on the second planar layer and exposing at least a portion of the first anode;
  • the light emitting diode comprises a light emitting lamp body and a second anode and a second cathode respectively connected to the two ends of the light emitting lamp body;
  • Step 2 transferring the light emitting diode into a first via of the TFT backplane, and connecting a second anode of the LED to a first anode of the TFT backplane;
  • Step 3 forming an anode contact layer around the light emitting diode and located on the first anode in a first via hole of the TFT backplane; the anode contact layer is in contact with the second anode, and Not in contact with the second cathode;
  • Step 4 forming a cathode isolation layer around the light emitting diode and located on the anode contact layer in the first via hole of the TFT backplane;
  • Step 5 Form a first cathode on the cathode isolation layer, the light emitting diode and the second flat layer, and the first cathode is in contact with the second cathode.
  • the TFT layer includes a gate electrode disposed on the substrate substrate, a gate protection layer disposed on the gate and the substrate, an active layer disposed on the gate protection layer, and An etch stop layer on the active layer and the gate protection layer, and a source and a drain provided on the etch stop layer, wherein the etch stop layer is respectively provided corresponding to the active layer a second via hole at both ends, wherein the source and the drain are respectively in contact with both ends of the active layer through the second via hole;
  • a third via is disposed on the first planar layer, and the first anode is in contact with the drain through the third via.
  • the second anode of the LED is connected to the first anode of the TFT backplane by soldering.
  • the step 3 forms the anode contact layer by inkjet printing; the material of the anode contact layer comprises one or more of nano silver and nano copper.
  • the step 4 forms the cathode isolation layer by inkjet printing; the material of the cathode isolation layer is an organic insulating material.
  • the step 5 is performed by vapor deposition to form the first cathode; the first anode is a reflective electrode; The first cathode is a transparent electrode.
  • the present invention also provides a light emitting diode display comprising a substrate, a TFT layer disposed on the substrate, a first planar layer disposed on the TFT layer, and a first planar layer disposed on the first planar layer a first anode, a second planar layer disposed on the first anode and the first planar layer, and a first via disposed on the second planar layer and exposing at least a portion of the first anode a light emitting diode disposed in the first via hole, an anode contact layer disposed around the light emitting diode and located on the first anode in the first via hole, and disposed in the first via hole a cathode isolation layer around the light emitting diode and located on the anode contact layer, and a first cathode disposed on the cathode isolation layer, the light emitting diode and the second planar layer;
  • the light emitting diode includes a light emitting lamp body and a second anode and a second cathode respectively connected to two ends of the light emitting lamp body, the second anode is connected to the first anode, and the second cathode is connected to the first cathode a cathode contact;
  • the anode contact layer is in contact with the second anode and is not in contact with the second cathode, and the anode contact layer and the first cathode are separated by the cathode isolation layer.
  • the TFT layer includes a gate electrode disposed on the substrate substrate, a gate protection layer disposed on the gate and the substrate, an active layer disposed on the gate protection layer, and An etch stop layer on the active layer and the gate protection layer, and a source and a drain provided on the etch stop layer, wherein the etch stop layer is respectively provided corresponding to the active layer a second via hole at both ends, wherein the source and the drain are respectively in contact with both ends of the active layer through the second via hole;
  • a third via is disposed on the first planar layer, and the first anode is in contact with the drain through the third via.
  • the material of the anode contact layer comprises one or more of nano silver and nano copper; the material of the cathode isolation layer is an organic insulating material.
  • the first anode is a reflective electrode; the first cathode is a transparent electrode.
  • the invention also provides a method for manufacturing a light emitting diode display, comprising the following steps:
  • Step 1 Providing a TFT backplane and a light emitting diode
  • the TFT backplane includes a base substrate, a TFT layer disposed on the base substrate, a first planar layer disposed on the TFT layer, and a first anode disposed on the first planar layer. a second planar layer on the first anode and the first planar layer, and a first via hole disposed on the second planar layer and exposing at least a portion of the first anode;
  • the light emitting diode comprises a light emitting lamp body and a second anode and a second cathode respectively connected to the two ends of the light emitting lamp body;
  • Step 2 transferring the light emitting diode into a first via of the TFT backplane, and connecting a second anode of the LED to a first anode of the TFT backplane;
  • Step 3 forming an anode contact layer around the light emitting diode and located on the first anode in a first via hole of the TFT backplane; the anode contact layer is in contact with the second anode, and Not in contact with the second cathode;
  • Step 4 forming a cathode isolation layer around the light emitting diode and located on the anode contact layer in the first via hole of the TFT backplane;
  • Step 5 forming a first cathode on the cathode isolation layer, the light emitting diode and the second flat layer, the first cathode being in contact with the second cathode;
  • the TFT layer includes a gate electrode disposed on the substrate substrate, a gate protection layer disposed on the gate and the substrate, an active layer disposed on the gate protection layer, An etch stop layer disposed on the active layer and the gate protection layer, and a source and a drain disposed on the etch stop layer, wherein the etch stop layer is respectively provided corresponding to the a second via at both ends of the source layer, wherein the source and the drain are respectively in contact with both ends of the active layer through the second via;
  • a third via is disposed on the first planar layer, and the first anode is in contact with the drain through the third via;
  • the second anode of the light emitting diode is connected to the first anode of the TFT back plate by soldering.
  • the invention provides a method for fabricating an LED display.
  • an anode contact layer By providing an anode contact layer, the contact area between the second anode of the LED and the first anode of the TFT backplane is increased to ensure the The contact between the two anodes and the first anode is good, and the problem that the second anode is in poor contact with the first anode due to the weak soldering is avoided, so that the light-emitting performance of the light-emitting diode is stabilized, and the display quality of the LED display is improved; further, The invention adopts an inkjet printing method to form an anode contact layer and a cathode isolation layer, which has simple process and low production cost.
  • the LED display provided by the invention has stable illuminating performance and good display quality by providing an anode contact layer.
  • FIG. 1 is a schematic structural view of a conventional light emitting diode display
  • FIG. 2 is a flow chart of a method of fabricating an LED display of the present invention
  • step 1 is a schematic diagram of step 1 of a method of fabricating an LED display of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an LED display of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an LED display of the present invention.
  • step 4 is a schematic diagram of step 4 of a method of fabricating an LED display of the present invention.
  • FIG. 7 is a schematic view showing a step 5 of a method for fabricating an LED display of the present invention and a schematic structural view of the LED display of the present invention.
  • the present invention first provides a method for fabricating an LED display, comprising the following steps:
  • Step 1 as shown in Figure 3, providing a TFT backplane 80 and a light emitting diode 60;
  • the TFT backplane 80 includes a base substrate 10, a TFT layer 20 disposed on the base substrate 10, a first planar layer 30 disposed on the TFT layer 20, and the first planar layer 30. a first anode 40, a second planar layer 50 disposed on the first anode 40 and the first planar layer 30, and a second planar layer 50 disposed on the second planar layer 50 and exposing the first anode 40 a portion of the first via 51;
  • the light emitting diode 60 includes a light emitting lamp body 61 and a second anode 62 and a second cathode 63 respectively connected to the two ends of the light emitting lamp body 61.
  • the first anode 40 is a reflective electrode.
  • the material of the first anode 40 is metal.
  • the material of the first anode 40 includes one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr).
  • Mo molybdenum
  • Al aluminum
  • Cu copper
  • Ti titanium
  • Cr chromium
  • the TFT layer 20 includes a gate electrode 21 disposed on the substrate substrate 10, a gate protection layer 22 disposed on the gate electrode 21 and the substrate substrate 10, and the gate protection layer An active layer 23 on the layer 22, an etch stop layer 24 disposed on the active layer 23 and the gate protection layer 22, and a source 25 and a drain 26 disposed on the etch stop layer 24.
  • a second via 242 corresponding to each end of the active layer 23 is disposed on the etch stop layer 24, and the source 25 and the drain 26 pass through the second via 242 and the active Both ends of layer 23 are in contact;
  • a third via 33 is disposed on the first planar layer 30, and the first anode 40 is in contact with the drain 26 through the third via 33.
  • Step 2 As shown in FIG. 4, the light emitting diode 60 is transferred into the first via 51 of the TFT backplane 80, and the second anode 62 of the LED 60 is backed by the TFT. The first anodes 40 of the plates 80 are joined together.
  • the second anode 62 of the light emitting diode 60 is connected to the first anode 40 of the TFT back plate 80 by soldering.
  • Step 3 as shown in FIG. 5, an anode contact layer 71 located around the light emitting diode 60 and located on the first anode 40 is formed in the first via 51 of the TFT backplane 80; the anode contact Layer 71 is in contact with said second anode 62 and is not in contact with said second cathode 63.
  • the contact area of the second anode 62 of the light emitting diode 60 with the first anode 40 of the TFT backing plate 80 is increased, and the second anode 62 and the first anode 40 are secured.
  • the good contact between the two anodes 62 and the first anode 40 due to the weak soldering is avoided, so that the light-emitting performance of the light-emitting diode 60 is stabilized, and the display quality of the light-emitting diode display is improved.
  • the step 3 forms the anode contact layer 71 by inkjet printing.
  • the material of the anode contact layer 71 includes one or more of nano silver and nano copper.
  • Step 4 as shown in FIG. 6, a cathode isolation layer 72 located around the light emitting diode 60 and on the anode contact layer 71 is formed in the first via 51 of the TFT backplane 80.
  • the cathode isolation layer 72 is an insulating material, so that the anode contact layer 71 can be isolated from the subsequently prepared first cathode 73 to prevent short circuits from being formed.
  • the step 4 forms the cathode isolation layer 72 by inkjet printing.
  • the material of the cathode isolation layer 72 is an organic insulating material.
  • the invention adopts the inkjet printing method to form the cathode isolation layer 72. Compared with the prior art, the cost of the mask is saved, the production cost is low, the process is simple, and the production efficiency is high.
  • Step 5 as shown in FIG. 7, a first cathode 73 is formed on the cathode isolation layer 72, the light emitting diode 60, and the second planar layer 50, and the first cathode 73 is in contact with the second cathode 63.
  • the first cathode 73 is formed by an evaporation method.
  • the first cathode 73 is a transparent electrode.
  • the material of the first cathode 73 is a transparent conductive metal oxide such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • the light-emitting diode display of the present invention constitutes a top-emitting light-emitting diode display, and the side of the first cathode 73 is a light-emitting surface.
  • the contact area between the second anode 62 of the LED 60 and the first anode 40 of the TFT backplane 80 is increased.
  • the contact between the second anode 62 and the first anode 40 is ensured to be good, and the problem that the second anode 62 is in poor contact with the first anode 40 due to the weak soldering is avoided, so that the light-emitting performance of the light-emitting diode 60 is stable, and the light-emitting performance is improved.
  • the display quality of the diode display; further, the present invention uses the inkjet printing method to form the anode contact layer 71 and the cathode isolation layer 72, which is simple in process and low in production cost.
  • the present invention further provides an LED display including a base substrate 10 , a TFT layer 20 disposed on the base substrate 10 , and a TFT layer disposed on the TFT layer. a first flat layer 30 on the first flat layer 30, a first anode 40 disposed on the first flat layer 30, and a second flat layer 50 disposed on the first anode 40 and the first flat layer 30.
  • the light emitting diode 60 includes a light emitting body 61 and a second anode 62 and a second cathode 63 respectively connected to the two ends of the light emitting body 61.
  • the second anode 62 is connected to the first anode 40.
  • the second cathode 63 is in contact with the first cathode 73;
  • the anode contact layer 71 is in contact with the second anode 62 and is not in contact with the second cathode 63.
  • the anode contact layer 71 and the first cathode 73 pass through the cathode isolation layer 72. Isolated.
  • the TFT layer 20 includes a gate electrode 21 disposed on the substrate substrate 10, a gate protection layer 22 disposed on the gate electrode 21 and the substrate substrate 10, and the gate protection layer An active layer 23 on the layer 22, an etch stop layer 24 disposed on the active layer 23 and the gate protection layer 22, and a source 25 and a drain 26 disposed on the etch stop layer 24.
  • a second via 242 corresponding to each end of the active layer 23 is disposed on the etch stop layer 24, and the source 25 and the drain 26 pass through the second via 242 and the active Both ends of layer 23 are in contact;
  • a third via 33 is disposed on the first planar layer 30, and the first anode 40 is in contact with the drain 26 through the third via 33.
  • the first anode 40 is a reflective electrode.
  • the material of the first anode 40 is metal.
  • the material of the first anode 40 includes one or more of molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), and chromium (Cr).
  • Mo molybdenum
  • Al aluminum
  • Cu copper
  • Ti titanium
  • Cr chromium
  • the material of the anode contact layer 71 includes one or more of nano silver and nano copper. kind.
  • the material of the cathode isolation layer 72 is an organic insulating material.
  • the first cathode 73 is a transparent electrode.
  • the material of the first cathode 73 is a transparent conductive metal oxide such as indium tin oxide (ITO).
  • ITO indium tin oxide
  • the contact area of the second anode 62 of the light-emitting diode 60 with the first anode 40 of the TFT backing plate 80 is increased, and the second anode 62 and the first anode 40 are ensured.
  • the inter-contact is good, and the problem that the second anode 62 is in poor contact with the first anode 40 due to the weak soldering is avoided, so that the light-emitting performance of the light-emitting diode 60 is stable and has a good display quality.
  • the present invention provides an LED display and a method of fabricating the same.
  • the method for fabricating the LED display of the present invention by providing an anode contact layer, the contact area between the second anode of the LED and the first anode of the TFT backplane is increased to ensure contact between the second anode and the first anode. Good, avoiding the problem that the second anode is in poor contact with the first anode due to the weak soldering, so that the light emitting performance of the light emitting diode is stable, and the display quality of the light emitting diode display is improved; further, the present invention uses the inkjet printing method to form the anode.
  • the contact layer and the cathode isolation layer have simple process and low production cost.
  • the light-emitting diode display of the present invention by providing an anode contact layer, the light-emitting performance of the light-emitting diode is stabilized, and the display quality is good.

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Abstract

提供一种发光二极管显示器及其制作方法。通过设置阳极接触层（71），增大了发光二极管的第二阳极（62）与TFT背板（80）的第一阳极（40）的接触面积，保证所述第二阳极（62）与第一阳极（40）之间接触良好，避免了由于焊接不牢固导致的第二阳极（62）与第一阳极（40）接触不良的问题，使得发光二极管（60）的发光性能稳定，提升发光二极管显示器的显示品质。进一步的，采用喷墨打印方法形成阳极接触层（71）与阴极隔离层（72），制程简单，生产成本低。采用上述方法制成的发光二极管显示器，通过设置阳极接触层（71），使得发光二极管（60）的发光性能稳定，具有较好的显示品质。

Description

发光二极管显示器及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种发光二极管显示器及其制作方法。
背景技术
随着科技的进步，市面上已发展出各式各样的显示器产品，如液晶显示器(Liquid Crystal Display，LCD)、电浆显示器(Plasma Display Panel，PDP)及发光二极管显示器(Light Emitting Diode display，LED display)等。其中，发光二极管显示器具有发光效率高、寿命长及低耗能等优点，已普遍应用于户外显示牌与大型户外广告牌，也存在于家用电视或计算机的显示器。
发光二极管显示器是一种通过控制半导体发光二极管的显示方式，用来显示文字、图形、图像、动画、行情、视频、录像信号等各种信息的显示屏幕。
发光二极管的技术进步是扩大市场需求及应用的最大推动力。最初，发光二极管只是作为微型指示灯，在计算机、音响和录像机等高档设备中应用，随着大规模集成电路和计算机技术的不断进步，发光二极管显示器正在迅速崛起，逐渐扩展到证券行情股票机、数码相机、掌上电脑(PDA)以及手机领域。
发光二极管显示器集微电子技术、计算机技术、信息处理于一体，以其色彩鲜艳、动态范围广、亮度高、清晰度高、工作电压低、功耗小、寿命长、耐冲击、色彩艳丽和工作稳定可靠等优点，成为最具优势的新一代显示媒体，发光二极管显示器已广泛应用于大型广场、商业广告、体育场馆、信息传播、新闻发布、证券交易等，可以满足不同环境的需要。
图1为现有的发光二极管显示器的结构示意图，如图1所示，所述发光二极管显示器包括衬底基板100、设于所述衬底基板100上的薄膜晶体管(TFT)层200、设于所述TFT层200上的第一平坦层300、设于所述第一平坦层300上的第一阳极400、设于所述第一阳极400与第一平坦层300上的第二平坦层500、设于所述第二平坦层500上且暴露出所述第一阳极400的第一过孔510、设于所述第一过孔510内的发光二极管600、设于所述第一过孔510内位于所述发光二极管600周围且位于所述第一阳极400上的 阴极隔离层720、以及设于所述阴极隔离层720、发光二极管600及第二平坦层500上的第一阴极730；
所述发光二极管600包括发光灯体610以及分别连接于所述发光灯体610两端的第二阳极620与第二阴极630，所述第二阳极620与所述第一阳极400相连接，所述第二阴极630与所述第一阴极730相接触，并且所述第一阳极400与所述第一阴极730之间通过所述阴极隔离层720隔离开。
通常，上述发光二极管显示器的制作方法包括：
步骤1’、提供TFT背板800与发光二极管600；
所述TFT背板800包括衬底基板100、设于所述衬底基板100上的TFT层200、设于所述TFT层200上的第一平坦层300、设于所述第一平坦层300上的第一阳极400、设于所述第一阳极400与第一平坦层300上的第二平坦层500、及设于所述第二平坦层500上且暴露出所述第一阳极400的第一过孔510；
所述发光二极管600包括发光灯体610以及分别连接于所述发光灯体610两端的第二阳极620与第二阴极630；
步骤2’、将所述发光二极管600转移至所述TFT背板800的第一过孔510内，并且采用焊接的方式将所述发光二极管600的第二阳极620与所述TFT背板800的第一阳极400连接在一起；
步骤3’、在所述TFT背板800的第一过孔510内形成位于所述发光二极管600周围且位于所述第一阳极400上的阴极隔离层720；
步骤4’、在所述阴极隔离层720、发光二极管600及第二平坦层500上形成第一阴极730，所述第一阴极730与第二阴极630相接触。
上述发光二极管显示器的制作方法的步骤2’中，由于所述发光二极管600的第二阳极620与所述TFT背板800的第一阳极400通过焊接的方式连接在一起，容易出现焊接不牢固导致第二阳极620与第一阳极400接触不良的情况，造成发光二极管600的发光受到影响。
上述发光二极管显示器的制作方法的步骤3’通常采用有机材料涂布制程结合黄光制程形成阴极隔离层720，所述黄光制程需要采用一道光罩，因此增加了光罩成本，造成生产成本过高。
发明内容
本发明的目的在于提供一种发光二极管显示器的制作方法，能够避免由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题，使得发光二极管的发光性能稳定，提升发光二极管显示器的显示品质。
本发明的目的还在于提供一种发光二极管显示器，发光二极管的发光性能稳定，具有较好的显示品质。
为实现上述目的，本发明首先提供一种发光二极管显示器的制作方法，包括如下步骤：
步骤1、提供TFT背板与发光二极管；
所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、及设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔；
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极；
步骤2、将所述发光二极管转移至所述TFT背板的第一过孔内，并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起；
步骤3、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述第一阳极上的阳极接触层；所述阳极接触层与所述第二阳极相接触，并且不与所述第二阴极相接触；
步骤4、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层；
步骤5、在所述阴极隔离层、发光二极管及第二平坦层上形成第一阴极，所述第一阴极与第二阴极相接触。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
所述第一平坦层上设有第三过孔，所述第一阳极通过所述第三过孔与所述漏极相接触。
所述步骤2中，采用焊接的方式将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起。
所述步骤3采用喷墨打印的方法形成所述阳极接触层；所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种。
所述步骤4采用喷墨打印的方法形成所述阴极隔离层；所述阴极隔离层的材料为有机绝缘材料。
所述步骤5采用蒸镀法形成所述第一阴极；所述第一阳极为反射电极； 所述第一阴极为透明电极。
本发明还提供一种发光二极管显示器，包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔、设于所述第一过孔内的发光二极管、设于所述第一过孔内位于所述发光二极管周围且位于所述第一阳极上的阳极接触层、设于所述第一过孔内位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层、以及设于所述阴极隔离层、发光二极管及第二平坦层上的第一阴极；
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极，所述第二阳极与所述第一阳极相连接，所述第二阴极与所述第一阴极相接触；
所述阳极接触层与所述第二阳极相接触，并且不与所述第二阴极相接触，所述阳极接触层与所述第一阴极之间通过所述阴极隔离层隔离开。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
所述第一平坦层上设有第三过孔，所述第一阳极通过所述第三过孔与所述漏极相接触。
所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种；所述阴极隔离层的材料为有机绝缘材料。
所述第一阳极为反射电极；所述第一阴极为透明电极。
本发明还提供一种发光二极管显示器的制作方法，包括如下步骤：
步骤1、提供TFT背板与发光二极管；
所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、及设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔；
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极；
步骤2、将所述发光二极管转移至所述TFT背板的第一过孔内，并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起；
步骤3、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述第一阳极上的阳极接触层；所述阳极接触层与所述第二阳极相接触，并且不与所述第二阴极相接触；
步骤4、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层；
步骤5、在所述阴极隔离层、发光二极管及第二平坦层上形成第一阴极，所述第一阴极与第二阴极相接触；
其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
所述第一平坦层上设有第三过孔，所述第一阳极通过所述第三过孔与所述漏极相接触；
其中，所述步骤2中，采用焊接的方式将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起。
本发明的有益效果：本发明提供的一种发光二极管显示器的制作方法，通过设置阳极接触层，增大了发光二极管的第二阳极与TFT背板的第一阳极的接触面积，保证所述第二阳极与第一阳极之间接触良好，避免了由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题，使得发光二极管的发光性能稳定，提升发光二极管显示器的显示品质；进一步的，本发明采用喷墨打印方法形成阳极接触层与阴极隔离层，制程简单，生产成本低。本发明提供的一种发光二极管显示器，通过设置阳极接触层，使得发光二极管的发光性能稳定，具有较好的显示品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的发光二极管显示器的结构示意图；
图2为本发明的发光二极管显示器的制作方法的流程图；
图3为本发明的发光二极管显示器的制作方法的步骤1的示意图；
图4为本发明的发光二极管显示器的制作方法的步骤2的示意图；
图5为本发明的发光二极管显示器的制作方法的步骤3的示意图；
图6为本发明的发光二极管显示器的制作方法的步骤4的示意图；
图7为本发明的发光二极管显示器的制作方法的步骤5的示意图暨本发明的发光二极管显示器的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种发光二极管显示器的制作方法，包括如下步骤：
步骤1、如图3所示，提供TFT背板80与发光二极管60；
所述TFT背板80包括衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的第一平坦层30、设于所述第一平坦层30上的第一阳极40、设于所述第一阳极40与第一平坦层30上的第二平坦层50、及设于所述第二平坦层50上且暴露出所述第一阳极40至少一部分的第一过孔51；
所述发光二极管60包括发光灯体61以及分别连接于所述发光灯体61两端的第二阳极62与第二阴极63。
具体的，所述第一阳极40为反射电极。
具体的，所述第一阳极40的材料为金属。
优选的，所述第一阳极40的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
具体的，所述TFT层20包括设于所述衬底基板10上的栅极21、设于所述栅极21与衬底基板10上的栅极保护层22、设于所述栅极保护层22上的有源层23、设于所述有源层23与栅极保护层22上的刻蚀阻挡层24、以及设于所述刻蚀阻挡层24上的源极25与漏极26，所述刻蚀阻挡层24上设有分别对应所述有源层23两端的第二过孔242，所述源极25与漏极26分别通过所述第二过孔242与所述有源层23的两端相接触；
所述第一平坦层30上设有第三过孔33，所述第一阳极40通过所述第三过孔33与所述漏极26相接触。
步骤2、如图4所示，将所述发光二极管60转移至所述TFT背板80的第一过孔51内，并且将所述发光二极管60的第二阳极62与所述TFT背 板80的第一阳极40连接在一起。
具体的，所述步骤2中，通过焊接的方式将所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40连接在一起。
步骤3、如图5所示，在所述TFT背板80的第一过孔51内形成位于所述发光二极管60周围且位于所述第一阳极40上的阳极接触层71；所述阳极接触层71与所述第二阳极62相接触，并且不与所述第二阴极63相接触。
通过设置阳极接触层71，增大了所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40的接触面积，保证所述第二阳极62与所述第一阳极40之间接触良好，避免了由于焊接不牢固导致的第二阳极62与第一阳极40接触不良的问题，使得发光二极管60的发光性能稳定，提升发光二极管显示器的显示品质。
具体的，所述步骤3采用喷墨打印的方法形成所述阳极接触层71。
优选的，所述阳极接触层71的材料包括纳米银与纳米铜中的一种或多种。
步骤4、如图6所示，在所述TFT背板80的第一过孔51内形成位于所述发光二极管60周围且位于所述阳极接触层71上的阴极隔离层72。
所述阴极隔离层72为绝缘材料，因此可以将所述阳极接触层71与后续制备的第一阴极73隔离开来，防止形成短路。
具体的，所述步骤4采用喷墨打印的方法形成所述阴极隔离层72。
优选的，所述阴极隔离层72的材料为有机绝缘材料。
本发明采用喷墨打印方法形成阴极隔离层72，与现有技术相比，节约了光罩成本，生产成本低，且制程简单，生产效率高。
步骤5、如图7所示，在所述阴极隔离层72、发光二极管60及第二平坦层50上形成第一阴极73，所述第一阴极73与第二阴极63相接触。
具体的，所述步骤5采用蒸镀法形成所述第一阴极73。
具体的，所述第一阴极73为透明电极。
优选的，所述第一阴极73的材料为透明导电金属氧化物，如氧化铟锡(ITO)。
在所述第一阳极40为反射电极，所述第一阴极73为透明电极的情况下，本发明的发光二极管显示器构成顶发光发光二极管显示器，所述第一阴极73一侧为出光面。
上述发光二极管显示器的制作方法，通过设置阳极接触层71，增大了发光二极管60的第二阳极62与TFT背板80的第一阳极40的接触面积， 保证所述第二阳极62与第一阳极40之间接触良好，避免了由于焊接不牢固导致的第二阳极62与第一阳极40接触不良的问题，使得发光二极管60的发光性能稳定，提升发光二极管显示器的显示品质；进一步的，本发明采用喷墨打印方法形成阳极接触层71与阴极隔离层72，制程简单，生产成本低。
请参阅图7，基于上述发光二极管显示器的制作方法，本发明还提供一种发光二极管显示器，包括衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的第一平坦层30、设于所述第一平坦层30上的第一阳极40、设于所述第一阳极40与第一平坦层30上的第二平坦层50、设于所述第二平坦层50上且暴露出所述第一阳极40至少一部分的第一过孔51、设于所述第一过孔51内的发光二极管60、设于所述第一过孔51内位于所述发光二极管60周围且位于所述第一阳极40上的阳极接触层71、设于所述第一过孔51内位于所述发光二极管60周围且位于所述阳极接触层71上的阴极隔离层72、以及设于所述阴极隔离层72、发光二极管60及第二平坦层50上的第一阴极73；
所述发光二极管60包括发光灯体61以及分别连接于所述发光灯体61两端的第二阳极62与第二阴极63，所述第二阳极62与所述第一阳极40相连接，所述第二阴极63与所述第一阴极73相接触；
所述阳极接触层71与所述第二阳极62相接触，并且不与所述第二阴极63相接触，所述阳极接触层71与所述第一阴极73之间通过所述阴极隔离层72隔离开。
具体的，所述TFT层20包括设于所述衬底基板10上的栅极21、设于所述栅极21与衬底基板10上的栅极保护层22、设于所述栅极保护层22上的有源层23、设于所述有源层23与栅极保护层22上的刻蚀阻挡层24、以及设于所述刻蚀阻挡层24上的源极25与漏极26，所述刻蚀阻挡层24上设有分别对应所述有源层23两端的第二过孔242，所述源极25与漏极26分别通过所述第二过孔242与所述有源层23的两端相接触；
所述第一平坦层30上设有第三过孔33，所述第一阳极40通过所述第三过孔33与所述漏极26相接触。
具体的，所述第一阳极40为反射电极。
具体的，所述第一阳极40的材料为金属。
优选的，所述第一阳极40的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
优选的，所述阳极接触层71的材料包括纳米银与纳米铜中的一种或多 种。
优选的，所述阴极隔离层72的材料为有机绝缘材料。
具体的，所述第一阴极73为透明电极。
优选的，所述第一阴极73的材料为透明导电金属氧化物，如氧化铟锡(ITO)。
上述发光二极管显示器，通过设置阳极接触层71，增大了发光二极管60的第二阳极62与TFT背板80的第一阳极40的接触面积，保证所述第二阳极62与第一阳极40之间接触良好，避免了由于焊接不牢固导致的第二阳极62与第一阳极40接触不良的问题，使得发光二极管60的发光性能稳定，具有较好的显示品质。
综上所述，本发明提供一种发光二极管显示器及其制作方法。本发明的发光二极管显示器的制作方法，通过设置阳极接触层，增大了发光二极管的第二阳极与TFT背板的第一阳极的接触面积，保证所述第二阳极与第一阳极之间接触良好，避免了由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题，使得发光二极管的发光性能稳定，提升发光二极管显示器的显示品质；进一步的，本发明采用喷墨打印方法形成阳极接触层与阴极隔离层，制程简单，生产成本低。本发明的发光二极管显示器，通过设置阳极接触层，使得发光二极管的发光性能稳定，具有较好的显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种发光二极管显示器的制作方法，包括如下步骤：
    步骤1、提供TFT背板与发光二极管；
    所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、及设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔；
    所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极；
    步骤2、将所述发光二极管转移至所述TFT背板的第一过孔内，并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起；
    步骤3、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述第一阳极上的阳极接触层；所述阳极接触层与所述第二阳极相接触，并且不与所述第二阴极相接触；
    步骤4、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层；
    步骤5、在所述阴极隔离层、发光二极管及第二平坦层上形成第一阴极，所述第一阴极与第二阴极相接触。
  2. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
    所述第一平坦层上设有第三过孔，所述第一阳极通过所述第三过孔与所述漏极相接触。
  3. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述步骤2中，采用焊接的方式将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起。
  4. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述步骤3采用喷墨打印的方法形成所述阳极接触层；所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种。
  5. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述步骤4采用喷墨打印的方法形成所述阴极隔离层；所述阴极隔离层的材料为有机绝缘材料。
  6. 如权利要求1所述的发光二极管显示器的制作方法，其中，所述步骤5采用蒸镀法形成所述第一阴极；所述第一阳极为反射电极；所述第一阴极为透明电极。
  7. 一种发光二极管显示器，包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔、设于所述第一过孔内的发光二极管、设于所述第一过孔内位于所述发光二极管周围且位于所述第一阳极上的阳极接触层、设于所述第一过孔内位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层、以及设于所述阴极隔离层、发光二极管及第二平坦层上的第一阴极；
    所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极，所述第二阳极与所述第一阳极相连接，所述第二阴极与所述第一阴极相接触；
    所述阳极接触层与所述第二阳极相接触，并且不与所述第二阴极相接触，所述阳极接触层与所述第一阴极之间通过所述阴极隔离层隔离开。
  8. 如权利要求7所述的发光二极管显示器，其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
    所述第一平坦层上设有第三过孔，所述第一阳极通过所述第三过孔与所述漏极相接触。
  9. 如权利要求7所述的发光二极管显示器，其中，所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种；所述阴极隔离层的材料为有机绝缘材料。
  10. 如权利要求7所述的发光二极管显示器，其中，所述第一阳极为反射电极；所述第一阴极为透明电极。
  11. 一种发光二极管显示器的制作方法，包括如下步骤：
    步骤1、提供TFT背板与发光二极管；
    所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、及设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔；
    所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极；
    步骤2、将所述发光二极管转移至所述TFT背板的第一过孔内，并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起；
    步骤3、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述第一阳极上的阳极接触层；所述阳极接触层与所述第二阳极相接触，并且不与所述第二阴极相接触；
    步骤4、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层；
    步骤5、在所述阴极隔离层、发光二极管及第二平坦层上形成第一阴极，所述第一阴极与第二阴极相接触；
    其中，所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极，所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔，所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触；
    所述第一平坦层上设有第三过孔，所述第一阳极通过所述第三过孔与所述漏极相接触；
    其中，所述步骤2中，采用焊接的方式将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起。
  12. 如权利要求11所述的发光二极管显示器的制作方法，其中，所述步骤3采用喷墨打印的方法形成所述阳极接触层；所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种。
  13. 如权利要求11所述的发光二极管显示器的制作方法，其中，所述步骤4采用喷墨打印的方法形成所述阴极隔离层；所述阴极隔离层的材料为有机绝缘材料。
  14. 如权利要求11所述的发光二极管显示器的制作方法，其中，所述步骤5采用蒸镀法形成所述第一阴极；所述第一阳极为反射电极；所述第一阴极为透明电极。
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