CN106898633A - 发光二极管显示器及其制作方法 - Google Patents

发光二极管显示器及其制作方法 Download PDF

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CN106898633A
CN106898633A CN201710104790.1A CN201710104790A CN106898633A CN 106898633 A CN106898633 A CN 106898633A CN 201710104790 A CN201710104790 A CN 201710104790A CN 106898633 A CN106898633 A CN 106898633A
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韩佰祥
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TCL Huaxing Photoelectric Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种发光二极管显示器及其制作方法。本发明的发光二极管显示器的制作方法,通过设置阳极接触层,增大了发光二极管的第二阳极与TFT背板的第一阳极的接触面积,保证所述第二阳极与第一阳极之间接触良好,避免了由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题,使得发光二极管的发光性能稳定,提升发光二极管显示器的显示品质;进一步的,本发明采用喷墨打印方法形成阳极接触层与阴极隔离层,制程简单,生产成本低。本发明的发光二极管显示器,通过设置阳极接触层,使得发光二极管的发光性能稳定,具有较好的显示品质。

Description

发光二极管显示器及其制作方法
技术领域
本发明涉及显示技术领域,尤其涉及一种发光二极管显示器及其制作方法。
背景技术
随着科技的进步,市面上已发展出各式各样的显示器产品,如液晶显示器(LiquidCrystal Display,LCD)、电浆显示器(Plasma Display Panel,PDP)及发光二极管显示器(Light Emitting Diode display,LED display)等。其中,发光二极管显示器具有发光效率高、寿命长及低耗能等优点,已普遍应用于户外显示牌与大型户外广告牌,也存在于家用电视或计算机的显示器。
发光二极管显示器是一种通过控制半导体发光二极管的显示方式,用来显示文字、图形、图像、动画、行情、视频、录像信号等各种信息的显示屏幕。
发光二极管的技术进步是扩大市场需求及应用的最大推动力。最初,发光二极管只是作为微型指示灯,在计算机、音响和录像机等高档设备中应用,随着大规模集成电路和计算机技术的不断进步,发光二极管显示器正在迅速崛起,逐渐扩展到证券行情股票机、数码相机、掌上电脑(PDA)以及手机领域。
发光二极管显示器集微电子技术、计算机技术、信息处理于一体,以其色彩鲜艳、动态范围广、亮度高、清晰度高、工作电压低、功耗小、寿命长、耐冲击、色彩艳丽和工作稳定可靠等优点,成为最具优势的新一代显示媒体,发光二极管显示器已广泛应用于大型广场、商业广告、体育场馆、信息传播、新闻发布、证券交易等,可以满足不同环境的需要。
图1为现有的发光二极管显示器的结构示意图,如图1所示,所述发光二极管显示器包括衬底基板100、设于所述衬底基板100上的薄膜晶体管(TFT)层200、设于所述TFT层200上的第一平坦层300、设于所述第一平坦层300上的第一阳极400、设于所述第一阳极400与第一平坦层300上的第二平坦层500、设于所述第二平坦层500上且暴露出所述第一阳极400的第一过孔510、设于所述第一过孔510内的发光二极管600、设于所述第一过孔510内位于所述发光二极管600周围且位于所述第一阳极400上的阴极隔离层720、以及设于所述阴极隔离层720、发光二极管600及第二平坦层500上的第一阴极730;
所述发光二极管600包括发光灯体610以及分别连接于所述发光灯体610两端的第二阳极620与第二阴极630,所述第二阳极620与所述第一阳极400相连接,所述第二阴极630与所述第一阴极730相接触,并且所述第一阳极400与所述第一阴极730之间通过所述阴极隔离层720隔离开。
通常,上述发光二极管显示器的制作方法包括:
步骤1’、提供TFT背板800与发光二极管600;
所述TFT背板800包括衬底基板100、设于所述衬底基板100上的TFT层200、设于所述TFT层200上的第一平坦层300、设于所述第一平坦层300上的第一阳极400、设于所述第一阳极400与第一平坦层300上的第二平坦层500、及设于所述第二平坦层500上且暴露出所述第一阳极400的第一过孔510;
所述发光二极管600包括发光灯体610以及分别连接于所述发光灯体610两端的第二阳极620与第二阴极630;
步骤2’、将所述发光二极管600转移至所述TFT背板800的第一过孔510内,并且采用焊接的方式将所述发光二极管600的第二阳极620与所述TFT背板800的第一阳极400连接在一起;
步骤3’、在所述TFT背板800的第一过孔510内形成位于所述发光二极管600周围且位于所述第一阳极400上的阴极隔离层720;
步骤4’、在所述阴极隔离层720、发光二极管600及第二平坦层500上形成第一阴极730,所述第一阴极730与第二阴极630相接触。
上述发光二极管显示器的制作方法的步骤2’中,由于所述发光二极管600的第二阳极620与所述TFT背板800的第一阳极400通过焊接的方式连接在一起,容易出现焊接不牢固导致第二阳极620与第一阳极400接触不良的情况,造成发光二极管600的发光受到影响。
上述发光二极管显示器的制作方法的步骤3’通常采用有机材料涂布制程结合黄光制程形成阴极隔离层720,所述黄光制程需要采用一道光罩,因此增加了光罩成本,造成生产成本过高。
发明内容
本发明的目的在于提供一种发光二极管显示器的制作方法,能够避免由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题,使得发光二极管的发光性能稳定,提升发光二极管显示器的显示品质。
本发明的目的还在于提供一种发光二极管显示器,发光二极管的发光性能稳定,具有较好的显示品质。
为实现上述目的,本发明首先提供一种发光二极管显示器的制作方法,包括如下步骤:
步骤1、提供TFT背板与发光二极管;
所述TFT背板包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、及设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔;
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极;
步骤2、将所述发光二极管转移至所述TFT背板的第一过孔内,并且将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起;
步骤3、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述第一阳极上的阳极接触层;所述阳极接触层与所述第二阳极相接触,并且不与所述第二阴极相接触;
步骤4、在所述TFT背板的第一过孔内形成位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层;
步骤5、在所述阴极隔离层、发光二极管及第二平坦层上形成第一阴极,所述第一阴极与第二阴极相接触。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极,所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔,所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触;
所述第一平坦层上设有第三过孔,所述第一阳极通过所述第三过孔与所述漏极相接触。
所述步骤2中,采用焊接的方式将所述发光二极管的第二阳极与所述TFT背板的第一阳极连接在一起。
所述步骤3采用喷墨打印的方法形成所述阳极接触层;所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种。
所述步骤4采用喷墨打印的方法形成所述阴极隔离层;所述阴极隔离层的材料为有机绝缘材料。
所述步骤5采用蒸镀法形成所述第一阴极;所述第一阳极为反射电极;所述第一阴极为透明电极。
本发明还提供一种发光二极管显示器,包括衬底基板、设于所述衬底基板上的TFT层、设于所述TFT层上的第一平坦层、设于所述第一平坦层上的第一阳极、设于所述第一阳极与第一平坦层上的第二平坦层、设于所述第二平坦层上且暴露出所述第一阳极至少一部分的第一过孔、设于所述第一过孔内的发光二极管、设于所述第一过孔内位于所述发光二极管周围且位于所述第一阳极上的阳极接触层、设于所述第一过孔内位于所述发光二极管周围且位于所述阳极接触层上的阴极隔离层、以及设于所述阴极隔离层、发光二极管及第二平坦层上的第一阴极;
所述发光二极管包括发光灯体以及分别连接于所述发光灯体两端的第二阳极与第二阴极,所述第二阳极与所述第一阳极相连接,所述第二阴极与所述第一阴极相接触;
所述阳极接触层与所述第二阳极相接触,并且不与所述第二阴极相接触,所述阳极接触层与所述第一阴极之间通过所述阴极隔离层隔离开。
所述TFT层包括设于所述衬底基板上的栅极、设于所述栅极与衬底基板上的栅极保护层、设于所述栅极保护层上的有源层、设于所述有源层与栅极保护层上的刻蚀阻挡层、以及设于所述刻蚀阻挡层上的源极与漏极,所述刻蚀阻挡层上设有分别对应所述有源层两端的第二过孔,所述源极与漏极分别通过所述第二过孔与所述有源层的两端相接触;
所述第一平坦层上设有第三过孔,所述第一阳极通过所述第三过孔与所述漏极相接触。
所述阳极接触层的材料包括纳米银与纳米铜中的一种或多种;所述阴极隔离层的材料为有机绝缘材料。
所述第一阳极为反射电极;所述第一阴极为透明电极。
本发明的有益效果:本发明提供的一种发光二极管显示器的制作方法,通过设置阳极接触层,增大了发光二极管的第二阳极与TFT背板的第一阳极的接触面积,保证所述第二阳极与第一阳极之间接触良好,避免了由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题,使得发光二极管的发光性能稳定,提升发光二极管显示器的显示品质;进一步的,本发明采用喷墨打印方法形成阳极接触层与阴极隔离层,制程简单,生产成本低。本发明提供的一种发光二极管显示器,通过设置阳极接触层,使得发光二极管的发光性能稳定,具有较好的显示品质。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有的发光二极管显示器的结构示意图;
图2为本发明的发光二极管显示器的制作方法的流程图;
图3为本发明的发光二极管显示器的制作方法的步骤1的示意图;
图4为本发明的发光二极管显示器的制作方法的步骤2的示意图;
图5为本发明的发光二极管显示器的制作方法的步骤3的示意图;
图6为本发明的发光二极管显示器的制作方法的步骤4的示意图;
图7为本发明的发光二极管显示器的制作方法的步骤5的示意图暨本发明的发光二极管显示器的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2,本发明首先提供一种发光二极管显示器的制作方法,包括如下步骤:
步骤1、如图3所示,提供TFT背板80与发光二极管60;
所述TFT背板80包括衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的第一平坦层30、设于所述第一平坦层30上的第一阳极40、设于所述第一阳极40与第一平坦层30上的第二平坦层50、及设于所述第二平坦层50上且暴露出所述第一阳极40至少一部分的第一过孔51;
所述发光二极管60包括发光灯体61以及分别连接于所述发光灯体61两端的第二阳极62与第二阴极63。
具体的,所述第一阳极40为反射电极。
具体的,所述第一阳极40的材料为金属。
优选的,所述第一阳极40的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
具体的,所述TFT层20包括设于所述衬底基板10上的栅极21、设于所述栅极21与衬底基板10上的栅极保护层22、设于所述栅极保护层22上的有源层23、设于所述有源层23与栅极保护层22上的刻蚀阻挡层24、以及设于所述刻蚀阻挡层24上的源极25与漏极26,所述刻蚀阻挡层24上设有分别对应所述有源层23两端的第二过孔242,所述源极25与漏极26分别通过所述第二过孔242与所述有源层23的两端相接触;
所述第一平坦层30上设有第三过孔33,所述第一阳极40通过所述第三过孔33与所述漏极26相接触。
步骤2、如图4所示,将所述发光二极管60转移至所述TFT背板80的第一过孔51内,并且将所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40连接在一起。
具体的,所述步骤2中,通过焊接的方式将所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40连接在一起。
步骤3、如图5所示,在所述TFT背板80的第一过孔51内形成位于所述发光二极管60周围且位于所述第一阳极40上的阳极接触层71;所述阳极接触层71与所述第二阳极62相接触,并且不与所述第二阴极63相接触。
通过设置阳极接触层71,增大了所述发光二极管60的第二阳极62与所述TFT背板80的第一阳极40的接触面积,保证所述第二阳极62与所述第一阳极40之间接触良好,避免了由于焊接不牢固导致的第二阳极62与第一阳极40接触不良的问题,使得发光二极管60的发光性能稳定,提升发光二极管显示器的显示品质。
具体的,所述步骤3采用喷墨打印的方法形成所述阳极接触层71。
优选的,所述阳极接触层71的材料包括纳米银与纳米铜中的一种或多种。
步骤4、如图6所示,在所述TFT背板80的第一过孔51内形成位于所述发光二极管60周围且位于所述阳极接触层71上的阴极隔离层72。
所述阴极隔离层72为绝缘材料,因此可以将所述阳极接触层71与后续制备的第一阴极73隔离开来,防止形成短路。
具体的,所述步骤4采用喷墨打印的方法形成所述阴极隔离层72。
优选的,所述阴极隔离层72的材料为有机绝缘材料。
本发明采用喷墨打印方法形成阴极隔离层72,与现有技术相比,节约了光罩成本,生产成本低,且制程简单,生产效率高。
步骤5、如图7所示,在所述阴极隔离层72、发光二极管60及第二平坦层50上形成第一阴极73,所述第一阴极73与第二阴极63相接触。
具体的,所述步骤5采用蒸镀法形成所述第一阴极73。
具体的,所述第一阴极73为透明电极。
优选的,所述第一阴极73的材料为透明导电金属氧化物,如氧化铟锡(ITO)。
在所述第一阳极40为反射电极,所述第一阴极73为透明电极的情况下,本发明的发光二极管显示器构成顶发光发光二极管显示器,所述第一阴极73一侧为出光面。
上述发光二极管显示器的制作方法,通过设置阳极接触层71,增大了发光二极管60的第二阳极62与TFT背板80的第一阳极40的接触面积,保证所述第二阳极62与第一阳极40之间接触良好,避免了由于焊接不牢固导致的第二阳极62与第一阳极40接触不良的问题,使得发光二极管60的发光性能稳定,提升发光二极管显示器的显示品质;进一步的,本发明采用喷墨打印方法形成阳极接触层71与阴极隔离层72,制程简单,生产成本低。
请参阅图7,基于上述发光二极管显示器的制作方法,本发明还提供一种发光二极管显示器,包括衬底基板10、设于所述衬底基板10上的TFT层20、设于所述TFT层20上的第一平坦层30、设于所述第一平坦层30上的第一阳极40、设于所述第一阳极40与第一平坦层30上的第二平坦层50、设于所述第二平坦层50上且暴露出所述第一阳极40至少一部分的第一过孔51、设于所述第一过孔51内的发光二极管60、设于所述第一过孔51内位于所述发光二极管60周围且位于所述第一阳极40上的阳极接触层71、设于所述第一过孔51内位于所述发光二极管60周围且位于所述阳极接触层71上的阴极隔离层72、以及设于所述阴极隔离层72、发光二极管60及第二平坦层50上的第一阴极73;
所述发光二极管60包括发光灯体61以及分别连接于所述发光灯体61两端的第二阳极62与第二阴极63,所述第二阳极62与所述第一阳极40相连接,所述第二阴极63与所述第一阴极73相接触;
所述阳极接触层71与所述第二阳极62相接触,并且不与所述第二阴极63相接触,所述阳极接触层71与所述第一阴极73之间通过所述阴极隔离层72隔离开。
具体的,所述TFT层20包括设于所述衬底基板10上的栅极21、设于所述栅极21与衬底基板10上的栅极保护层22、设于所述栅极保护层22上的有源层23、设于所述有源层23与栅极保护层22上的刻蚀阻挡层24、以及设于所述刻蚀阻挡层24上的源极25与漏极26,所述刻蚀阻挡层24上设有分别对应所述有源层23两端的第二过孔242,所述源极25与漏极26分别通过所述第二过孔242与所述有源层23的两端相接触;
所述第一平坦层30上设有第三过孔33,所述第一阳极40通过所述第三过孔33与所述漏极26相接触。
具体的,所述第一阳极40为反射电极。
具体的,所述第一阳极40的材料为金属。
优选的,所述第一阳极40的材料包括钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)、铬(Cr)中的一种或多种。
优选的,所述阳极接触层71的材料包括纳米银与纳米铜中的一种或多种。
优选的,所述阴极隔离层72的材料为有机绝缘材料。
具体的,所述第一阴极73为透明电极。
优选的,所述第一阴极73的材料为透明导电金属氧化物,如氧化铟锡(ITO)。
上述发光二极管显示器,通过设置阳极接触层71,增大了发光二极管60的第二阳极62与TFT背板80的第一阳极40的接触面积,保证所述第二阳极62与第一阳极40之间接触良好,避免了由于焊接不牢固导致的第二阳极62与第一阳极40接触不良的问题,使得发光二极管60的发光性能稳定,具有较好的显示品质。
综上所述,本发明提供一种发光二极管显示器及其制作方法。本发明的发光二极管显示器的制作方法,通过设置阳极接触层,增大了发光二极管的第二阳极与TFT背板的第一阳极的接触面积,保证所述第二阳极与第一阳极之间接触良好,避免了由于焊接不牢固导致的第二阳极与第一阳极接触不良的问题,使得发光二极管的发光性能稳定,提升发光二极管显示器的显示品质;进一步的,本发明采用喷墨打印方法形成阳极接触层与阴极隔离层,制程简单,生产成本低。本发明的发光二极管显示器,通过设置阳极接触层,使得发光二极管的发光性能稳定,具有较好的显示品质。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

1.一种发光二极管显示器的制作方法,其特征在于,包括如下步骤:
步骤1、提供TFT背板(80)与发光二极管(60);
所述TFT背板(80)包括衬底基板(10)、设于所述衬底基板(10)上的TFT层(20)、设于所述TFT层(20)上的第一平坦层(30)、设于所述第一平坦层(30)上的第一阳极(40)、设于所述第一阳极(40)与第一平坦层(30)上的第二平坦层(50)、及设于所述第二平坦层(50)上且暴露出所述第一阳极(40)至少一部分的第一过孔(51);
所述发光二极管(60)包括发光灯体(61)以及分别连接于所述发光灯体(61)两端的第二阳极(62)与第二阴极(63);
步骤2、将所述发光二极管(60)转移至所述TFT背板(80)的第一过孔(51)内,并且将所述发光二极管(60)的第二阳极(62)与所述TFT背板(80)的第一阳极(40)连接在一起;
步骤3、在所述TFT背板(80)的第一过孔(51)内形成位于所述发光二极管(60)周围且位于所述第一阳极(40)上的阳极接触层(71);所述阳极接触层(71)与所述第二阳极(62)相接触,并且不与所述第二阴极(63)相接触;
步骤4、在所述TFT背板(80)的第一过孔(51)内形成位于所述发光二极管(60)周围且位于所述阳极接触层(71)上的阴极隔离层(72);
步骤5、在所述阴极隔离层(72)、发光二极管(60)及第二平坦层(50)上形成第一阴极(73),所述第一阴极(73)与第二阴极(63)相接触。
2.如权利要求1所述的发光二极管显示器的制作方法,其特征在于,所述TFT层(20)包括设于所述衬底基板(10)上的栅极(21)、设于所述栅极(21)与衬底基板(10)上的栅极保护层(22)、设于所述栅极保护层(22)上的有源层(23)、设于所述有源层(23)与栅极保护层(22)上的刻蚀阻挡层(24)、以及设于所述刻蚀阻挡层(24)上的源极(25)与漏极(26),所述刻蚀阻挡层(24)上设有分别对应所述有源层(23)两端的第二过孔(242),所述源极(25)与漏极(26)分别通过所述第二过孔(242)与所述有源层(23)的两端相接触;
所述第一平坦层(30)上设有第三过孔(33),所述第一阳极(40)通过所述第三过孔(33)与所述漏极(26)相接触。
3.如权利要求1所述的发光二极管显示器的制作方法,其特征在于,所述步骤2中,采用焊接的方式将所述发光二极管(60)的第二阳极(62)与所述TFT背板(80)的第一阳极(40)连接在一起。
4.如权利要求1所述的发光二极管显示器的制作方法,其特征在于,所述步骤3采用喷墨打印的方法形成所述阳极接触层(71);所述阳极接触层(71)的材料包括纳米银与纳米铜中的一种或多种。
5.如权利要求1所述的发光二极管显示器的制作方法,其特征在于,所述步骤4采用喷墨打印的方法形成所述阴极隔离层(72);所述阴极隔离层(72)的材料为有机绝缘材料。
6.如权利要求1所述的发光二极管显示器的制作方法,其特征在于,所述步骤5采用蒸镀法形成所述第一阴极(73);所述第一阳极(40)为反射电极;所述第一阴极(73)为透明电极。
7.一种发光二极管显示器,其特征在于,包括衬底基板(10)、设于所述衬底基板(10)上的TFT层(20)、设于所述TFT层(20)上的第一平坦层(30)、设于所述第一平坦层(30)上的第一阳极(40)、设于所述第一阳极(40)与第一平坦层(30)上的第二平坦层(50)、设于所述第二平坦层(50)上且暴露出所述第一阳极(40)至少一部分的第一过孔(51)、设于所述第一过孔(51)内的发光二极管(60)、设于所述第一过孔(51)内位于所述发光二极管(60)周围且位于所述第一阳极(40)上的阳极接触层(71)、设于所述第一过孔(51)内位于所述发光二极管(60)周围且位于所述阳极接触层(71)上的阴极隔离层(72)、以及设于所述阴极隔离层(72)、发光二极管(60)及第二平坦层(50)上的第一阴极(73);
所述发光二极管(60)包括发光灯体(61)以及分别连接于所述发光灯体(61)两端的第二阳极(62)与第二阴极(63),所述第二阳极(62)与所述第一阳极(40)相连接,所述第二阴极(63)与所述第一阴极(73)相接触;
所述阳极接触层(71)与所述第二阳极(62)相接触,并且不与所述第二阴极(63)相接触,所述阳极接触层(71)与所述第一阴极(73)之间通过所述阴极隔离层(72)隔离开。
8.如权利要求7所述的发光二极管显示器,其特征在于,所述TFT层(20)包括设于所述衬底基板(10)上的栅极(21)、设于所述栅极(21)与衬底基板(10)上的栅极保护层(22)、设于所述栅极保护层(22)上的有源层(23)、设于所述有源层(23)与栅极保护层(22)上的刻蚀阻挡层(24)、以及设于所述刻蚀阻挡层(24)上的源极(25)与漏极(26),所述刻蚀阻挡层(24)上设有分别对应所述有源层(23)两端的第二过孔(242),所述源极(25)与漏极(26)分别通过所述第二过孔(242)与所述有源层(23)的两端相接触;
所述第一平坦层(30)上设有第三过孔(33),所述第一阳极(40)通过所述第三过孔(33)与所述漏极(26)相接触。
9.如权利要求7所述的发光二极管显示器,其特征在于,所述阳极接触层(71)的材料包括纳米银与纳米铜中的一种或多种;所述阴极隔离层(72)的材料为有机绝缘材料。
10.如权利要求7所述的发光二极管显示器,其特征在于,所述第一阳极(40)为反射电极;所述第一阴极(73)为透明电极。
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109873001A (zh) * 2019-02-26 2019-06-11 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN110737137A (zh) * 2019-10-31 2020-01-31 厦门天马微电子有限公司 Led基板及制作方法、背光模组及显示装置
CN110853527A (zh) * 2018-08-01 2020-02-28 深圳Tcl新技术有限公司 一种透明led显示设备及其制造方法
WO2020077538A1 (zh) * 2018-10-16 2020-04-23 深圳市汇顶科技股份有限公司 具有薄膜晶体管器件的集成装置及其制备方法
US11527520B2 (en) 2017-12-18 2022-12-13 Lg Display Co., Ltd. Micro light emitting diode display device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200105568A (ko) * 2019-02-28 2020-09-08 삼성디스플레이 주식회사 전자 장치, 전자 장치 제조 방법, 및 발광 소자 전이 방법
CN110649177A (zh) * 2019-09-24 2020-01-03 云谷(固安)科技有限公司 显示面板的制备方法、显示面板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103872082A (zh) * 2012-12-12 2014-06-18 乐金显示有限公司 高亮度有机发光二极管显示器
CN104871231A (zh) * 2012-12-10 2015-08-26 勒克斯维科技公司 具有接地联结线的有源矩阵显示面板
CN104953044A (zh) * 2015-05-06 2015-09-30 深圳市华星光电技术有限公司 柔性oled及其制作方法
CN106206672A (zh) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 Amoled器件及其制作方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101893376B1 (ko) * 2011-06-28 2018-08-31 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
JP5798626B2 (ja) * 2011-08-03 2015-10-21 パナソニック株式会社 表示パネル装置及びその製造方法
US10622310B2 (en) * 2012-09-26 2020-04-14 Ping-Jung Yang Method for fabricating glass substrate package
CN103441138B (zh) * 2013-08-13 2016-06-22 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
KR101692351B1 (ko) 2013-11-27 2017-01-03 엘지디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
KR20160049384A (ko) * 2014-10-27 2016-05-09 삼성디스플레이 주식회사 유기 발광 표시 장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104871231A (zh) * 2012-12-10 2015-08-26 勒克斯维科技公司 具有接地联结线的有源矩阵显示面板
CN103872082A (zh) * 2012-12-12 2014-06-18 乐金显示有限公司 高亮度有机发光二极管显示器
CN104953044A (zh) * 2015-05-06 2015-09-30 深圳市华星光电技术有限公司 柔性oled及其制作方法
CN106206672A (zh) * 2016-09-09 2016-12-07 深圳市华星光电技术有限公司 Amoled器件及其制作方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11527520B2 (en) 2017-12-18 2022-12-13 Lg Display Co., Ltd. Micro light emitting diode display device
CN110853527A (zh) * 2018-08-01 2020-02-28 深圳Tcl新技术有限公司 一种透明led显示设备及其制造方法
WO2020077538A1 (zh) * 2018-10-16 2020-04-23 深圳市汇顶科技股份有限公司 具有薄膜晶体管器件的集成装置及其制备方法
CN109873001A (zh) * 2019-02-26 2019-06-11 深圳市华星光电半导体显示技术有限公司 阵列基板及其制作方法
CN110737137A (zh) * 2019-10-31 2020-01-31 厦门天马微电子有限公司 Led基板及制作方法、背光模组及显示装置

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