WO2018152889A1 - Procédé de préparation d'un substrat flexible - Google Patents

Procédé de préparation d'un substrat flexible Download PDF

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Publication number
WO2018152889A1
WO2018152889A1 PCT/CN2017/076599 CN2017076599W WO2018152889A1 WO 2018152889 A1 WO2018152889 A1 WO 2018152889A1 CN 2017076599 W CN2017076599 W CN 2017076599W WO 2018152889 A1 WO2018152889 A1 WO 2018152889A1
Authority
WO
WIPO (PCT)
Prior art keywords
flexible substrate
substrate
fixing material
glass substrate
edge
Prior art date
Application number
PCT/CN2017/076599
Other languages
English (en)
Chinese (zh)
Inventor
王选芸
Original Assignee
武汉华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Publication of WO2018152889A1 publication Critical patent/WO2018152889A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate

Abstract

La présente invention concerne un procédé de préparation d'un substrat flexible consistant : à former une base flexible sur un substrat en verre (S110) ; à décoller la base flexible du substrat en verre (S120) ; et à fixer des bords de la base flexible sur le substrat en verre (S130). Ledit procédé permet de libérer efficacement la contrainte de film mince générée pendant la préparation de la formation de film de la base flexible, de telle sorte que le substrat flexible préparé ne gauchit pas, améliorant ainsi la fiabilité du substrat flexible et dispositifs flexibles correspondants.
PCT/CN2017/076599 2017-02-22 2017-03-14 Procédé de préparation d'un substrat flexible WO2018152889A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710098365.6 2017-02-22
CN201710098365.6A CN106935596A (zh) 2017-02-22 2017-02-22 一种柔性基板的制备方法

Publications (1)

Publication Number Publication Date
WO2018152889A1 true WO2018152889A1 (fr) 2018-08-30

Family

ID=59423121

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/076599 WO2018152889A1 (fr) 2017-02-22 2017-03-14 Procédé de préparation d'un substrat flexible

Country Status (2)

Country Link
CN (1) CN106935596A (fr)
WO (1) WO2018152889A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109389903B (zh) * 2017-08-04 2021-01-29 京东方科技集团股份有限公司 柔性基板及其加工方法、加工系统
CN107464895A (zh) * 2017-09-19 2017-12-12 武汉华星光电半导体显示技术有限公司 柔性显示屏的制作方法
CN107610597A (zh) * 2017-10-27 2018-01-19 武汉华星光电半导体显示技术有限公司 显示面板母板及显示面板母板的切割方法
CN110828505B (zh) * 2018-07-23 2022-06-07 京东方科技集团股份有限公司 柔性面板的制作方法及制作装置
CN110473985B (zh) * 2019-08-27 2022-10-28 云谷（固安）科技有限公司 一种柔性基板、柔性显示面板及柔性基板的制作方法
CN111613580B (zh) * 2020-05-21 2023-04-18 深圳市华星光电半导体显示技术有限公司 柔性基板的制备方法及柔性基板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996698A (zh) * 2014-05-29 2014-08-20 友达光电股份有限公司 一种软性面板的制作方法
CN105493287A (zh) * 2015-09-18 2016-04-13 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
CN106098940A (zh) * 2016-08-26 2016-11-09 武汉华星光电技术有限公司 无损剥离柔性基板的方法
CN106328683A (zh) * 2016-10-11 2017-01-11 武汉华星光电技术有限公司 柔性oled显示器及其制作方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545463B (zh) * 2013-09-27 2017-02-01 Tcl集团股份有限公司 一种柔性显示器件及其制作方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103996698A (zh) * 2014-05-29 2014-08-20 友达光电股份有限公司 一种软性面板的制作方法
CN105493287A (zh) * 2015-09-18 2016-04-13 京东方科技集团股份有限公司 一种柔性显示装置的制备方法
CN106098940A (zh) * 2016-08-26 2016-11-09 武汉华星光电技术有限公司 无损剥离柔性基板的方法
CN106328683A (zh) * 2016-10-11 2017-01-11 武汉华星光电技术有限公司 柔性oled显示器及其制作方法

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Publication number Publication date
CN106935596A (zh) 2017-07-07

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