WO2018150556A1 - 電子装置及び接続子 - Google Patents

電子装置及び接続子 Download PDF

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Publication number
WO2018150556A1
WO2018150556A1 PCT/JP2017/006026 JP2017006026W WO2018150556A1 WO 2018150556 A1 WO2018150556 A1 WO 2018150556A1 JP 2017006026 W JP2017006026 W JP 2017006026W WO 2018150556 A1 WO2018150556 A1 WO 2018150556A1
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WO
WIPO (PCT)
Prior art keywords
conductive adhesive
base end
electronic device
electronic element
front surface
Prior art date
Application number
PCT/JP2017/006026
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English (en)
French (fr)
Inventor
宗一郎 梅田
雄司 森永
Original Assignee
新電元工業株式会社
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Filing date
Publication date
Application filed by 新電元工業株式会社 filed Critical 新電元工業株式会社
Priority to US16/466,619 priority Critical patent/US10896868B2/en
Priority to PCT/JP2017/006026 priority patent/WO2018150556A1/ja
Priority to CN201780084126.3A priority patent/CN110199387B/zh
Priority to KR1020197025457A priority patent/KR20190108163A/ko
Priority to JP2018506352A priority patent/JP6474939B2/ja
Priority to EP17896779.0A priority patent/EP3584831A4/en
Publication of WO2018150556A1 publication Critical patent/WO2018150556A1/ja

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    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73221Strap and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73263Layer and strap connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/8434Bonding interfaces of the connector
    • H01L2224/84345Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848Bonding techniques
    • H01L2224/84801Soldering or alloying
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • H01L23/49513Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3512Cracking

Definitions

  • the present invention relates to an electronic device and a connector.
  • the present invention provides a balance while ensuring the thickness of the conductive adhesive on the head portion side even when the head portion of the connector sinks into the conductive adhesive.
  • a highly reliable electronic device that can prevent the breakage of the terminal and a connector used in such an electronic device are provided.
  • An electronic device includes: A sealing part; An electronic element provided in the sealing portion; A first terminal protruding outward from the sealing portion; A connector having a head portion connected to the front surface of the electronic element via a conductive adhesive and a base end portion connected to the first terminal via a conductor layer; With The head portion has one first convex portion protruding toward the electronic element side, The first protrusion sinks into the conductive adhesive, contacts the front surface of the electronic element with a point; The base end portion has a plurality of protrusions or support surfaces.
  • the base end is connected to the conductor layer via a conductive adhesive
  • the base end portion may include the support surface and a recess provided on a periphery of the support surface.
  • the base end portion has a bent portion that bends and extends to the front surface side,
  • the concave portion may extend to the front side at least up to the bent portion.
  • the head portion has a second convex portion protruding toward the electronic element side,
  • the first convex portion may protrude from the second convex portion toward the electronic element.
  • the proximal end has the support surface;
  • the first direction is a straight line connecting the width direction center of the base end portion and the width direction center of the head portion
  • the length of the support surface along the first direction is the second convexity.
  • the length of the portion may be shorter than the length along the first direction.
  • the first convex portion may be positioned at the center in the width direction of the head portion.
  • the first convex portion is located on the base side thereof, and a straight portion having a vertical cross-sectional shape that is a straight line; You may have.
  • a connector according to an example of the present invention is: A connector used in an electronic device having a sealing portion, an electronic element provided in the sealing portion, and a first terminal protruding outward from the sealing portion, A head portion connected to the front surface of the electronic element via a conductive adhesive; A proximal end connected to the first terminal via a conductor layer; With The head portion has one first convex portion protruding toward the electronic element side, The first convex portion sinks with respect to the conductive adhesive, and comes into contact with the front surface of the electronic element with a point, The base end portion has a plurality of protrusions that contact the conductor layer or a support surface that contacts the conductor layer.
  • the present invention even if the head portion sinks into the conductive adhesive due to the weight of the connector, one first convex portion that contacts the front surface of the electronic element with a point is provided.
  • the base end portion has a plurality of protrusions or support surfaces. For this reason, it is possible to provide a highly reliable electronic device that can prevent the balance from being lost while securing the thickness of the conductive adhesive on the head portion side, and a connector used in such an electronic device.
  • FIG. 1 is a perspective view of a semiconductor device according to the first embodiment of the present invention.
  • FIG. 2 is a perspective view showing an aspect in which the sealing portion is removed in the semiconductor device according to the first embodiment of the present invention.
  • FIG. 3 is an enlarged side view of the vicinity of the connector in FIG.
  • FIG. 4 is a side view showing the connector used in the first embodiment of the present invention.
  • FIG. 5 is a bottom view showing the connector used in the first embodiment of the present invention.
  • FIG. 6 is a side view showing one aspect of the first convex portion used in the first embodiment of the present invention.
  • FIG. 7 is a side view showing another aspect of the first convex portion used in the first embodiment of the present invention.
  • FIG. 8 is a bottom view showing a modification of the head portion.
  • FIG. 1 is a perspective view of a semiconductor device according to the first embodiment of the present invention.
  • FIG. 2 is a perspective view showing an aspect in which the sealing portion is removed in the semiconductor device according to the
  • FIG. 9 is a bottom view showing another modified example of the head portion.
  • FIG. 10 is a bottom view showing a modification of the connector used in the first embodiment of the present invention.
  • FIG. 11 is a side view showing an aspect in which the first convex portion of the connector used in the first embodiment of the present invention sinks into the conductive adhesive and contacts the semiconductor element.
  • FIG. 12 is a side view showing a mode in which the first convex portion of the connector used in the modification of the first embodiment of the present invention sinks into the conductive adhesive and contacts the semiconductor element.
  • FIG. 13 is a bottom view showing the base end portion of the connector used in the second embodiment of the present invention.
  • the semiconductor device which is an example of the electronic device of the present embodiment includes a substrate 5 made of, for example, an insulating material, and a conductor layer 70 made of copper or the like provided on the substrate 5. May be. A heat sink 79 (see FIG. 3) made of copper or the like may be provided on the back surface of the substrate 5.
  • the semiconductor device includes a sealing portion 90 (see FIG. 1) made of a sealing resin, a semiconductor element 95 provided in the sealing portion 90, and outward from the sealing portion 90. You may have the 1st main terminal 11 which protrudes, and the 2nd main terminal 12 which protrudes outward from the sealing part 90.
  • FIG. As shown in FIG. 3, the semiconductor device includes a head layer 40 connected to the front surface of a semiconductor element 95 via a conductive adhesive 75 such as solder and the first main terminal 11 via a conductor layer 70. You may have the connector 51 which has the base end part 45 connected.
  • a semiconductor device is used as an electronic device and a semiconductor element 95 is used as an electronic element.
  • the present invention is not limited to this, and the semiconductor device is not necessarily “semiconductor”.
  • the second main terminal 12 is connected to the conductor layer 70, and the second main terminal 12 is connected to the back surface of the semiconductor element 95 via the conductor layer 70.
  • a resist (not shown) for preventing the conductive adhesive such as solder from flowing out may be provided on the periphery of the connection portion of the second main terminal 12 with the conductor layer 70.
  • the back surface of the semiconductor element 95 and the conductor layer 70 may be connected via a conductive adhesive such as solder.
  • the head portion 40 has one first convex portion 41 that protrudes toward the semiconductor element 95 side.
  • the 1st convex part 41 sinks with respect to the conductive adhesive 75, and contacts the front surface of the semiconductor element 95 with a point (refer FIG.11 and FIG.12).
  • the base end portion 45 may have a support surface 46 that contacts the conductor layer 70 or is provided on the conductive adhesive 75 on the conductor layer 70.
  • the “point” in the present embodiment may have a certain area, and the first convex portion 41 is in contact with the front surface of the semiconductor element 95 at a point. This means that the portion of the semiconductor element 95 closest to the front surface is in contact with the front surface of the semiconductor element 95.
  • a front surface side sensing terminal 13 (hereinafter referred to as “front surface side sensing terminal 13”) that protrudes outward from the sealing portion 90 and is used for source side sensing. Is provided. In the present embodiment, the description will be given using the first main terminal 11 through which the main current flows as the first terminal and the front surface side sensing terminal 13 through which the main current flows as the second terminal. There is no limit. A mode in which the main current does not flow to the first terminal can be adopted, or a mode in which the second terminal is not used for sensing can be used.
  • the front surface side sensing terminal 13 is electrically connected to the base end portion 45 by a wire or the like (not shown).
  • the base end portion 45 may have a support surface 46 and a recess 47 provided on the periphery of the support surface 46.
  • the recess 47 may be provided so as to surround the entire support surface 46, but as shown in FIG. 5, the recess 47 is formed so as to continuously surround the three sides on the base end side of the support surface 46. Also good. Further, the recess 47 may be formed so as to surround the support surface 46 intermittently instead of continuously.
  • the base end portion 45 may have a bent portion 48 that bends and extends to the front surface side (the upper side in FIG. 3). The recess 47 may extend to the front side along a bent portion 48 extending from the support surface 46 to the front side.
  • a conductive adhesive can be provided along the recessed part 47 provided in the bending part 48. This is beneficial in that it facilitates the formation of ferrets.
  • the head portion 40 may have a second convex portion 42 protruding toward the semiconductor element 95, or may have a second convex portion 42 as shown in FIG. 10. It does not have to be. Although only one each of the first convex portion 41 and the second convex portion 42 may be provided, as shown in FIGS. 8 and 9, the first convex portion 41 and the second convex portion 42 A plurality of each may be provided. Moreover, as shown in FIG.8 and FIG.9, the aspect by which the 1st convex part 41 is not provided in one part among the several 2nd convex parts 42 provided may be sufficient.
  • the support surface 46 When the straight line connecting the center in the width direction (vertical direction in FIG. 5) of the base end portion 45 and the center in the width direction of the head portion 40 is the first direction (left and right direction in FIG. 5), the support surface 46 The length along the first direction may be shorter than the length along the first direction of the second convex portion 42 (see FIG. 5).
  • the first convex portion 41 may be positioned at the center in the width direction of the head portion 40.
  • the first main terminal 11 and the second main terminal 12 may be power terminals through which a large capacity current (for example, 200 A to 300 A or more) flows.
  • a large capacity current for example, 200 A to 300 A or more
  • the connector 51 is likely to sink into the conductive adhesive 75.
  • the second main terminal 12, the front surface side sensing terminal 13, the back surface side sensing terminal 14, and the control terminal 15 protrude from the outside from one side surface of the sealing portion 90, and are sealed.
  • the first main terminal 11 protrudes outward from the other side surface of the portion 90.
  • the first main terminal 11, the second main terminal 12, the front surface side sensing terminal 13, the back surface side sensing terminal 14, and the control terminal 15 are bent to the front surface side, and are provided on the front surface side. 5 is connected.
  • the control board 5 is used for controlling the semiconductor element 95.
  • the structure in the sealing portion 90 of the semiconductor device may be line symmetric.
  • each of the first main terminal 11, the second main terminal 12, the front surface side sensing terminal 13, the back surface side sensing terminal 14, the control terminal 15, and the conductor layer 70 is axisymmetric with respect to an arbitrary straight line. It may be arranged as follows. In FIG. 2, the wire 19 is also shown.
  • the head portion 40 sinks into the conductive adhesive 75 due to the weight of the connector 51, one point that contacts the front surface of the semiconductor element 95 with a point.
  • the first convex portion 41 is provided, and the base end portion 45 has a support surface 46. For this reason, it is possible to prevent the balance from being lost while securing the thickness of the conductive adhesive 75 on the head portion 40 side.
  • the conductive adhesive 75 is positioned at a location where the first convex portion 41 is not provided. This is advantageous in that the head portion 40 can be more securely fixed to the semiconductor element 95 by the conductive adhesive 75.
  • the base end portion 45 can contact the conductor layer 70 at the support surface 46 or can float in a well-balanced manner on the conductive adhesive 75 (before being cured). When the support surface 46 is in contact with the conductor layer 70, the balance of the connector 51 can be more reliably prevented from being lost. On the other hand, when the support surface 46 floats on the conductive adhesive 75, the base end portion 45 and the conductor layer 70 can be more reliably bonded when the conductive adhesive 75 is hardened.
  • the base end portion 45 is connected to the conductor layer 70 via a conductive adhesive 75 such as solder
  • the base end portion 45 is provided on the support surface 46 and the periphery of the support surface 46 as shown in FIG.
  • the conductive adhesive 75 can be put into the recess 47, and a fillet (for example, a solder ferret) by the conductive adhesive 75 can be easily formed. For this reason, it can prevent that the quantity of the conductive adhesive 75 becomes inadequate and a crack etc. enter after the conductive adhesive 75 hardens
  • the base end portion 45 and the conductor layer 70 can be bonded by the conductive adhesive 75 by providing such a recess 47.
  • the concave portion 47 extends to the front side along the bent portion 48.
  • the head portion 40 has a second convex portion 42 that protrudes toward the semiconductor element 95, and the first convex portion 41 protrudes from the second convex portion 42 toward the semiconductor element 95 side.
  • the thickness of the conductive adhesive 75 such as solder can be increased to a certain degree at a location where the first convex portion 41 is not provided, and the first convex portion 41 and the second convex portion 42 are further provided. It is possible to further increase the thickness of the conductive adhesive 75 at a portion that is not.
  • the first convex portion 41 is used.
  • the conductive adhesive 75 having an appropriate thickness can be provided between the head portion 40 and the front surface of the semiconductor element 95. it can.
  • variety of a current path is securable by making the width
  • the amount of the conductive adhesive 75 that can be applied to the front surface of the semiconductor element 95 and the size of the head portion 40 that can be placed on the front surface of the semiconductor element 95 are restrictions on the amount of the conductive adhesive 75 that can be applied to the front surface of the semiconductor element 95 and the size of the head portion 40 that can be placed on the front surface of the semiconductor element 95.
  • the second convex portion 42 having a size (in the in-plane direction) of the conductive adhesive 75 and a necessary contact area, an appropriate contact area with the conductive adhesive 75 can be secured.
  • the amount of the conductive adhesive 75 can be made appropriate.
  • the size of the base end portion 45 is reduced. Can be small. Further, the length along the first direction is shorter than the second convex portion 42 but is longer than the first convex portion 41 so that the balance is not lost by the support surface 46. be able to.
  • the head portion 40 can be prevented from being tilted in the width direction.
  • the first convex portion 41 is used in a mode in which the head portion 40 sinks into the conductive adhesive 75 due to the weight of the connector 51 and the first convex portion 41 and the front surface of the semiconductor element 95 are in contact with each other.
  • the head portion 40 is inclined in the width direction around the center.
  • the first convex portion 41 is located on the root side, the straight section 41 a having a straight longitudinal section, and the distal section of the straight section 41 a, having a longitudinal section.
  • the diameter in hemispherical part 41b can be made small.
  • the front surface of the element 95 can be brought into contact.
  • the conductive adhesive 75 when a mode in which the linear portion 41 a has a tapered shape with a width narrowing toward the tip, the conductive adhesive 75 can be increased on the tip side. For this reason, it is possible to prevent the occurrence of problems such as cracks in the conductive adhesive 75 when cured on the tip side close to the semiconductor element 95. Further, since the amount of the conductive adhesive 75 can be gradually increased toward the distal end side, the conductive adhesive 75 can be positioned evenly and reliably around the first convex portion 41. Therefore, even if the head portion 40 sinks into the conductive adhesive 75 due to the weight of the connector 51 and the first convex portion 41 and the front surface of the semiconductor element 95 are in contact with each other, the head The possibility that the portion 40 is inclined can be reduced.
  • the linear part 41a may be cylindrical.
  • the base end portion 45 of the connector 51 has been described using the support surface 46 that contacts the conductor layer 70.
  • the base end portion 45 of the connector 51 has a plurality of protruding portions 49 that contact the conductor layer 70.
  • the head portion 40 sinks into the conductive adhesive 75 due to the weight of the connector 51, it contacts the front surface of the semiconductor element 95 with a point.
  • One first convex portion 41 is provided, and the base end portion 45 has a plurality of protruding portions 49 that contact the conductor layer 70. For this reason, it is possible to prevent the balance from being lost while securing the thickness of the conductive adhesive 75 on the head portion 40 side.
  • the number of the protrusion parts 49 should just be two or more.
  • the protrusions 49 are provided symmetrically or point-symmetrically with respect to a straight line (straight line extending in the first direction) passing through the center of the base end portion 45 in the width direction. May be. Even when a large number of protrusions 49 are provided, the protrusions 49 are symmetrical or point-symmetric with respect to a straight line (straight line extending in the first direction) passing through the center of the base end portion 45 in the width direction. It may be provided.
  • First terminal (first main terminal) 13 Second terminal (front side sensing terminal) 40 Head part 41 First convex part 42 Second convex part 45 Base end part 46 Support surface 47 Concave part 49 Protruding part 70 Conductive layer 75 Conductive adhesive 90 Sealing part 95 Semiconductor element (electronic element)

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Abstract

電子装置は、封止部90と、前記封止部90内に設けられた電子素子95と、前記封止部90から外方に突出する第一端子と、前記電子素子95のおもて面に導電性接着剤75を介して接続されるヘッド部40及び前記第一端子に導体層70を介して接続される基端部45を有する接続子51と、を有している。前記ヘッド部40は、前記電子素子95側に突出する一つの第一凸部41を有している。前記第一凸部41は、前記導電性接着剤75に対して沈み込み、前記電子素子95の前記おもて面に点で接触している。前記基端部45は、前記導体層70に接触する複数の突出部49又は前記導体層70に接触する支持面46を有している。

Description

電子装置及び接続子
 本発明は、電子装置及び接続子に関する。
 従来から、半導体素子を基板の導体層上に載置し、当該半導体素子のおもて面と端子とをはんだ等の導電性接着剤を介して接続子で接続することが知られている(特開2015-12065号)。大容量の電流を半導体装置内に流す場合には接続子の大きさが大きくなる。このように大きな接続子を用いた場合には、導電性接着剤に対して接続子が沈み込み、ヘッド部側で接続子と半導体素子とが接触することがあるが、信頼性を高めるためには、はんだ等の導電性接着剤の厚みを確保する必要がある。
 本発明は、このような点に鑑み、接続子のヘッド部が導電性接着剤に対して沈み込むような場合であっても、ヘッド部側での導電性接着剤の厚みを確保しつつバランスを崩すことを防止できる信頼性の高い電子装置と、このような電子装置に用いられる接続子を提供する。
 本発明の一例による電子装置は、
 封止部と、
 前記封止部内に設けられた電子素子と、
 前記封止部から外方に突出する第一端子と、
 前記電子素子のおもて面に導電性接着剤を介して接続されるヘッド部及び前記第一端子に導体層を介して接続される基端部を有する接続子と、
 を備え、
 前記ヘッド部が、前記電子素子側に突出する一つの第一凸部を有し、
 前記第一凸部が、前記導電性接着剤に対して沈み込み、前記電子素子の前記おもて面に点で接触し、
 前記基端部が、複数の突出部又は支持面を有する。
 本発明の一例による電子装置において、
 前記基端部は、前記導体層に導電性接着剤を介して接続され、
 前記基端部は、前記支持面と、前記支持面の周縁に設けられた凹部と、を有してもよい。
 本発明の一例による電子装置において、
 前記基端部は、おもて面側に曲がって延びた屈曲部を有し、
 前記凹部は、少なくとも前記屈曲部までおもて面側に延びてもよい。
 本発明の一例による電子装置において、
 前記ヘッド部は、前記電子素子側に突出する第二凸部を有し、
 前記第一凸部は、前記第二凸部から前記電子素子側に突出してもよい。
 本発明の一例による電子装置において、
 前記基端部は前記支持面を有し、
 前記基端部の幅方向の中心と前記ヘッド部の幅方向の中心とを結んだ直線を第一方向とした場合に、前記支持面の前記第一方向に沿った長さは前記第二凸部の前記第一方向に沿った長さよりも短くてもよい。
 本発明の一例による電子装置において、
 前記第一凸部は、前記ヘッド部の幅方向の中心に位置付けられてもよい。
 本発明の一例による電子装置において、
 前記第一凸部は、その根元側に位置し、縦断面形状が直線となった直線部と、前記直線部の先端側に位置し、縦断面形状が半球又は円弧となった半球形状部と、を有してもよい。
 本発明の一例による接続子は、
 封止部と、前記封止部内に設けられた電子素子と、前記封止部から外方に突出する第一端子と、を有する電子装置に用いられる接続子であって、
 前記電子素子のおもて面に導電性接着剤を介して接続されるヘッド部と、
 前記第一端子に導体層を介して接続される基端部と、
 を備え、
 前記ヘッド部は、前記電子素子側に突出する一つの第一凸部を有し、
 前記第一凸部は、前記導電性接着剤に対して沈み込み、前記電子素子の前記おもて面に点で接触するようになっており、
 前記基端部は、前記導体層に接触する複数の突出部又は前記導体層に接触する支持面を有する。
 本発明によれば、接続子の重さによってヘッド部が導電性接着剤に対して沈み込む場合であっても、電子素子のおもて面に点で接触する一つの第一凸部が設けられ、かつ、基端部が複数の突出部又は支持面を有している。このため、ヘッド部側での導電性接着剤の厚みを確保しつつバランスを崩すことを防止できる信頼性の高い電子装置と、このような電子装置に用いられる接続子を提供できる。
図1は、本発明の第1の実施の形態による半導体装置の斜視図である。 図2は、本発明の第1の実施の形態による半導体装置において、封止部を除去した態様を示した斜視図である。 図3は、図2において、接続子の近辺を拡大した側方図である。 図4は、本発明の第1の実施の形態で用いられる接続子を示した側方図である。 図5は、本発明の第1の実施の形態で用いられる接続子を示した底面図である。 図6は、本発明の第1の実施の形態で用いられる第一凸部の一態様を示した側方図である。 図7は、本発明の第1の実施の形態で用いられる第一凸部の別の態様を示した側方図である。 図8は、ヘッド部の一変形例を示した底面図である。 図9は、ヘッド部の別の変形例を示した底面図である。 図10は、本発明の第1の実施の形態で用いられる接続子の変形例を示した底面図である。 図11は、本発明の第1の実施の形態で用いられる接続子の第一凸部が導電性接着剤に沈み込んで半導体素子に接触する態様を示した側方図である。 図12は、本発明の第1の実施の形態の変形例で用いられる接続子の第一凸部が導電性接着剤に沈み込んで半導体素子に接触する態様を示した側方図である。 図13は、本発明の第2の実施の形態で用いられる接続子の基端部を示した底面図である。
第1の実施の形態
《構成》
 図2に示すように、本実施の形態の電子装置の一例である半導体装置は、例えば絶縁性材料からなる基板5と、基板5上に設けられ、銅等からなる導体層70と、を有してもよい。基板5の裏面には、銅等からなる放熱板79(図3参照)が設けられてもよい。図2に示すように、半導体装置は、封止樹脂等からなる封止部90(図1参照)と、封止部90内に設けられた半導体素子95と、封止部90から外方に突出する第一主端子11と、封止部90から外方に突出する第二主端子12と、を有してもよい。図3に示すように、半導体装置は、半導体素子95のおもて面にはんだ等の導電性接着剤75を介して接続されるヘッド部40及び第一主端子11に導体層70を介して接続される基端部45を有する接続子51を有してもよい。
 本実施の形態では、電子装置として半導体装置を用い、電子素子として半導体素子95を用いて説明するが、これに限られるものではなく、特に「半導体」である必要はない。
 図2に示す態様では、導体層70に第二主端子12が接続され、第二主端子12は半導体素子95の裏面と導体層70を介して接続されている。第二主端子12の導体層70との接続箇所の周縁には、はんだ等の導電性接着剤が流れ出るのを防止するためのレジスト(図示せず)が設けられてもよい。半導体素子95の裏面と導体層70とは、はんだ等の導電性接着剤を介して接続されてもよい。
 図5に示すように、ヘッド部40は、半導体素子95側に突出する一つの第一凸部41を有している。第一凸部41は、導電性接着剤75に対して沈み込み、半導体素子95のおもて面に点で接触する(図11及び図12参照)。基端部45は、導体層70に接触する又は導体層70上の導電性接着剤75に設けられる支持面46を有してもよい。なお、本実施の形態における「点」は一定の面積を有していてもよく、第一凸部41が半導体素子95のおもて面に点で接触するとは、第一凸部41のうち、最も半導体素子95のおもて面側の部分が半導体素子95のおもて面に接触することを意味している。
 図2に示す半導体素子95は、第一主端子11におもて面が電気的に接続され、第二主端子12に裏面が電気的に接続されている。本実施の形態では、封止部90から外方に突出し、ソース側のセンシングのために用いられるおもて面側のセンシング端子13(以下「おもて面側センシング端子13」という。)が設けられている。本実施の形態では、第一端子として主電流が流れる第一主端子11を用いて説明し、第二端子として主電流が流れるおもて面側センシング端子13を用いて説明するが、これに限られることはない。第一端子に主電流が流れない態様を採用することもできるし、第二端子がセンシングために用いられない態様を用いることもできる。おもて面側センシング端子13は図示しないワイヤ等によって、基端部45に電気的に接続されている。
 図4及び図5に示すように、基端部45は、支持面46と、支持面46の周縁に設けられた凹部47と、を有してもよい。凹部47は、支持面46の全体を取り囲むように設けられてもよいが、図5に示すように、支持面46のうち、基端側の3辺を連続的に取り囲むようにして形成されてもよい。また、凹部47は、支持面46を連続的にではなく断続的に取り囲むように形成されてもよい。また、基端部45はおもて面側(図3の上方側)に曲がって延びた屈曲部48を有してもよい。凹部47は、支持面46からおもて面側に延びた屈曲部48に沿っておもて面側に延びてもよい。このように凹部47が屈曲部48に沿っておもて面側に延びている態様を採用した場合には、屈曲部48に設けられた凹部47に沿って導電性接着剤を設けることができ、フェレットを形成しやすくなる点で有益である。
 ヘッド部40は、図4及び図5に示すように、半導体素子95側に突出する第二凸部42を有してもよいし、図10に示すように第二凸部42を有していなくてもよい。第一凸部41及び第二凸部42の各々が一つだけ設けられた態様となってもよいが、図8及び図9に示すように、第一凸部41及び第二凸部42の各々が複数設けられてもよい。また、図8及び図9に示すように、複数設けられた第二凸部42のうち一部では第一凸部41が設けられていない態様であってもよい。
 基端部45の幅方向(図5の上下方向)の中心とヘッド部40の幅方向の中心とを結んだ直線を第一方向(図5の左右方向)とした場合に、支持面46の第一方向に沿った長さは第二凸部42の第一方向に沿った長さよりも短くなっていてもよい(図5参照)。
 第一凸部41は、ヘッド部40の幅方向の中心に位置付けられてもよい。
 第一主端子11及び第二主端子12は、大容量の電流(例えば200A~300A以上)が流れるパワー端子であってもよい。第一主端子11及び第二主端子12がこのようなパワー端子である場合には、接続子51に流れる電流が大きくことから、接続子51の大きさが大きくなる。このため、接続子51が導電性接着剤75に沈み込んでしまうことが起こりやすい。
 図1に示す態様では、封止部90の一方側の側面から、第二主端子12、おもて面側センシング端子13、裏面側センシング端子14及び制御端子15が外方から突出し、封止部90の他方側の側面から第一主端子11が外方に突出している。第一主端子11、第二主端子12、おもて面側センシング端子13、裏面側センシング端子14及び制御端子15はおもて面側に曲げられ、おもて面側に設けられた制御基板5と接続されるようになっている。この制御基板5は、半導体素子95を制御するために用いられるものである。
 半導体装置の封止部90内の構造は線対称となっていてもよい。一例としては、第一主端子11、第二主端子12、おもて面側センシング端子13、裏面側センシング端子14、制御端子15及び導体層70の各々が、任意の直線に対して線対称となるようにして配置されてもよい。なお、図2にはワイヤ19も示されている。
《作用・効果》
 次に、上述した構成からなる本実施の形態による作用・効果について説明する。
 本実施の形態によれば、接続子51の重さによってヘッド部40が導電性接着剤75に対して沈み込む場合であっても、半導体素子95のおもて面に点で接触する一つの第一凸部41が設けられ、かつ、基端部45が支持面46を有している。このため、ヘッド部40側での導電性接着剤75の厚みを確保しつつバランスを崩すことを防止できる。
 図5及び図10に示すように、第一凸部41が1つだけ設けられている態様を採用した場合には、第一凸部41が設けられていない箇所に導電性接着剤75を位置付けることができ、導電性接着剤75によってヘッド部40を半導体素子95に対してより確実に固定できる点で有益である。
 基端部45は、支持面46で導体層70に接触するか又は(硬化する前の)導電性接着剤75にバランスよく浮くことができる。支持面46が導体層70に接触する場合には、より確実に、接続子51のバランスが崩れることを防止できる。他方、支持面46が導電性接着剤75に浮いている場合には、導電性接着剤75が固まったときに、基端部45と導体層70とをより確実に接着できる。
 基端部45が導体層70にはんだ等の導電性接着剤75を介して接続される態様において、基端部45が、図5に示すように、支持面46と、支持面46の周縁に設けられた凹部47とを有する態様を採用した場合には、凹部47に導電性接着剤75を入れ込むことができ、導電性接着剤75によるフィレット(例えばはんだフェレット)を形成しやすくできる。このため、導電性接着剤75の量が不十分となって、導電性接着剤75が硬化した後で、ひび等が入ってしまうことを防止できる。特に支持面46が導体層70に接触するほど接続子51が重い場合には、このような凹部47を設けることで、導電性接着剤75によって基端部45と導体層70とを接着できる点で有益である。また、このような場合には、図4に示すように、凹部47が屈曲部48に沿っておもて面側に延びている態様を採用することも有益である。
 図5に示すように、ヘッド部40が半導体素子95側に突出する第二凸部42を有し、第一凸部41が第二凸部42から半導体素子95側に突出する態様を採用した場合には、第一凸部41が設けられていない箇所ではんだ等の導電性接着剤75の厚みを一定程度厚くすることができ、さらに第一凸部41及び第二凸部42が設けられていない箇所で導電性接着剤75の厚みをさらに厚くすることができる。特に接続子51の重さによってヘッド部40が導電性接着剤75に対して沈み込み、第一凸部41と半導体素子95のおもて面とが接触する態様においては、第一凸部41及び第二凸部42の厚み(高さ)を適切な値にすることで、ヘッド部40と半導体素子95のおもて面との間に適切な厚みの導電性接着剤75を設けることができる。また、第二凸部42の幅を適切な値にすることで、電流経路の幅を確保することができる。
 また、半導体素子95のおもて面に塗布できる導電性接着剤75の量や、半導体素子95のおもて面に載置できるヘッド部40の大きさに制約がある。この点、導電性接着剤75と必要な接触面積分だけの(面内方向の)大きさからなる第二凸部42を設けることで、導電性接着剤75との適切な接触面積を確保でき、導電性接着剤75の量を適切なものにすることができる。
 支持面46の第一方向に沿った長さを第二凸部42の第一方向に沿った長さよりも短くする態様を採用することで(図5参照)、基端部45の大きさを小さくすることができる。また、第一方向に沿った長さに関して、第二凸部42と比較して短くしながらも第一凸部41と比較して長くすることで、支持面46によってバランスを崩さないようにすることができる。
 第一凸部41がヘッド部40の幅方向の中心に位置付けられる態様を採用することで、ヘッド部40が幅方向で傾くことを防止できる。特に接続子51の重さによってヘッド部40が導電性接着剤75に対して沈み込み、第一凸部41と半導体素子95のおもて面とが接触する態様においては、第一凸部41を中心として幅方向でヘッド部40が傾いてしまう可能性がある。この点、この態様を採用することで、幅方向でヘッド部40が傾いてしまう可能性を低減できる。
 図6及び図7に示すように、第一凸部41が、その根元側に位置し、縦断面形状が直線となった直線部41aと、直線部41aの先端側に位置し、縦断面形状が半球又は円弧となった半球形状部41bとを有する態様を採用した場合には、半球形状部41bにおける径を小さくことができる。このため、ヘッド部40が導電性接着剤75に沈み込んで第一凸部41が半導体素子95のおもて面と接触する場合でも、より小さな面積(点)で第一凸部41と半導体素子95のおもて面とを接触させることができる。この結果、ヘッド部40と半導体素子95のおもて面との間に位置する導電性接着剤75を増やすことができ、ひいては、硬化した際に導電性接着剤75にクラックが入る等の不具合が発生することを未然に防止できる。
 図7に示すように、直線部41aとして先端に向かって幅の狭くなったテーパー状となっている態様を採用した場合には、先端側で導電性接着剤75を増やすことができる。このため、半導体素子95に近い先端側において、硬化した際に導電性接着剤75にクラックが入る等の不具合が発生することを未然に防止できる。また、先端側に向かって徐々に導電性接着剤75の量を増やすことができるので、第一凸部41の周りに均等かつ確実に導電性接着剤75を位置付けることができる。このため、接続子51の重さによってヘッド部40が導電性接着剤75に対して沈み込み、第一凸部41と半導体素子95のおもて面とが接触する態様であっても、ヘッド部40が傾いてしまう可能性を低減できる。なお、図6に示すように、直線部41aは円柱形状となっていてもよい。
第2の実施の形態
 次に、本発明の第2の実施の形態について説明する。
 第1の実施の形態では、接続子51の基端部45が導体層70に接触する支持面46を有する態様を用いて説明したが、第2の実施の形態では、図13に示すように、接続子51の基端部45が導体層70に接触する複数の突出部49を有する態様となっている。
 その他の構成は、第1の実施の形態と同様である。第2の実施の形態において、第1の実施の形態と同じ又は同様の部材等については同じ符号を付し、その説明を省略する。本実施の形態でも、第1の実施の形態によって実現される効果と同様の効果を得ることができる。
 つまり、本実施の形態によれば、接続子51の重さによってヘッド部40が導電性接着剤75に対して沈み込む場合であっても、半導体素子95のおもて面に点で接触する一つの第一凸部41が設けられ、かつ、基端部45が導体層70に接触する複数の突出部49を有している。このため、ヘッド部40側での導電性接着剤75の厚みを確保しつつバランスを崩すことを防止できる。
 なお、突出部49の数は2つ以上であればよい。突出部49が2つだけの場合には、基端部45の幅方向の中心を通過する直線(第一方向で延在する直線)に対して線対称又は点対象に突出部49が設けられてもよい。また、突出部49が多数設けられている場合でも、基端部45の幅方向の中心を通過する直線(第一方向で延在する直線)に対して線対称又は点対象に突出部49が設けられてもよい。
 最後になったが、上述した各実施の形態の記載、変形例の記載及び図面の開示は、請求の範囲に記載された発明を説明するための一例に過ぎず、上述した実施の形態の記載又は図面の開示によって請求の範囲に記載された発明が限定されることはない。また、出願当初の請求項の記載はあくまでも一例であり、明細書、図面等の記載に基づき、請求項の記載を適宜変更することもできる。
11    第一端子(第一主端子)
13    第二端子(おもて面側センシング端子)
40    ヘッド部
41    第一凸部
42    第二凸部
45    基端部
46    支持面
47    凹部
49    突出部
70    導体層
75    導電性接着剤
90    封止部
95    半導体素子(電子素子)

Claims (8)

  1.  封止部と、
     前記封止部内に設けられた電子素子と、
     前記封止部から外方に突出する第一端子と、
     前記電子素子のおもて面に導電性接着剤を介して接続されるヘッド部及び前記第一端子に導体層を介して接続される基端部を有する接続子と、
     を備え、
     前記ヘッド部は、前記電子素子側に突出する一つの第一凸部を有し、
     前記第一凸部は、前記導電性接着剤に対して沈み込み、前記電子素子の前記おもて面に点で接触し、
     前記基端部は、複数の突出部又は支持面を有することを特徴とする電子装置。
  2.  前記基端部は、前記導体層に導電性接着剤を介して接続され、
     前記基端部は、前記支持面と、前記支持面の周縁に設けられた凹部と、を有することを特徴とする請求項1に記載の電子装置。
  3.  前記基端部は、おもて面側に曲がって延びた屈曲部を有し、
     前記凹部は、少なくとも前記屈曲部までおもて面側に延びていることを特徴とする請求項2に記載の電子装置。
  4.  前記ヘッド部は、前記電子素子側に突出する第二凸部を有し、
     前記第一凸部は、前記第二凸部から前記電子素子側に突出することを特徴とする請求項1乃至3のいずれか1項に記載の電子装置。
  5.  前記基端部は前記支持面を有し、
     前記基端部の幅方向の中心と前記ヘッド部の幅方向の中心とを結んだ直線を第一方向とした場合に、前記支持面の前記第一方向に沿った長さは前記第二凸部の前記第一方向に沿った長さよりも短いことを特徴とする請求項4に記載の電子装置。
  6.  前記第一凸部は、前記ヘッド部の幅方向の中心に位置付けられることを特徴とする請求項1乃至5のいずれか1項に記載の電子装置。
  7.  前記第一凸部は、その根元側に位置し、縦断面形状が直線となった直線部と、前記直線部の先端側に位置し、縦断面形状が半球又は円弧となった半球形状部と、を有することを特徴とする請求項1乃至6のいずれか1項に記載の電子装置。
  8.  封止部と、前記封止部内に設けられた電子素子と、前記封止部から外方に突出する第一端子と、を有する電子装置に用いられる接続子であって、
     前記電子素子のおもて面に導電性接着剤を介して接続されるヘッド部と、
     前記第一端子に導体層を介して接続される基端部と、
     を備え、
     前記ヘッド部は、前記電子素子側に突出する一つの第一凸部を有し、
     前記第一凸部は、前記導電性接着剤に対して沈み込み、前記電子素子の前記おもて面に点で接触するようになっており、
     前記基端部は、前記導体層に接触する複数の突出部又は前記導体層に接触する支持面を有することを特徴とする接続子。
     
PCT/JP2017/006026 2017-02-20 2017-02-20 電子装置及び接続子 WO2018150556A1 (ja)

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