WO2018150449A1 - Module à semi-conducteurs et son procédé de production, dispositif d'entraînement équipé du module à semi-conducteurs et dispositif de direction assistée électrique - Google Patents

Module à semi-conducteurs et son procédé de production, dispositif d'entraînement équipé du module à semi-conducteurs et dispositif de direction assistée électrique Download PDF

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Publication number
WO2018150449A1
WO2018150449A1 PCT/JP2017/005281 JP2017005281W WO2018150449A1 WO 2018150449 A1 WO2018150449 A1 WO 2018150449A1 JP 2017005281 W JP2017005281 W JP 2017005281W WO 2018150449 A1 WO2018150449 A1 WO 2018150449A1
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Prior art keywords
lead frame
semiconductor module
layer
power semiconductor
semiconductor element
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PCT/JP2017/005281
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English (en)
Japanese (ja)
Inventor
康寛 川井
清水　康博
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日本精工株式会社
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Application filed by 日本精工株式会社 filed Critical 日本精工株式会社
Priority to PCT/JP2017/005281 priority Critical patent/WO2018150449A1/fr
Publication of WO2018150449A1 publication Critical patent/WO2018150449A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to a semiconductor module and a method for manufacturing the same, a drive device including the semiconductor module, and an electric power steering device.
  • a semiconductor chip (hereinafter also referred to as “power semiconductor element” in the present specification) is mounted on a ceramic substrate provided with a dielectric plate mounted on a heat sink, and silicone is contained in the case. Some are sealed with gel (see, for example, Patent Document 1).
  • a solid insulator such as an epoxy resin is disposed at the peripheral edge of the conductor plate in the ceramic substrate, and the case is placed on the heat sink so as to surround four sides of the ceramic substrate.
  • a semiconductor module in which a power semiconductor element (transistor chip) mounted on a circuit board or a lead frame is transfer-molded using an epoxy-based curable resin and sealed. Yes.
  • a shunt resistor that functions as a current detection means for detecting a current value is provided on the same plane of the lead frame separately from a power semiconductor element (transistor chip) provided on the lead frame.
  • a power semiconductor element transistor chip
  • a semiconductor module fixed with screws via a thermal interface material (hereinafter also referred to as TIM) is used (see FIG. 29).
  • the TIM fills a small gap or unevenness between a device that generates heat and a heat sink (such as a housing), and plays an important role in efficiently transferring heat to the heat sink.
  • heat dissipation performance by TIM is maintained by pressing with the axial force of a screw using grease or a sheet (see, for example, Patent Documents 3 and 4).
  • the above-described configuration is a configuration for satisfying the heat dissipation and insulation required for the semiconductor module, but on the other hand, the number of components increases and the size of the semiconductor module increases. Further, in the semiconductor module, it is required to efficiently release (heat radiate) the heat generated by the semiconductor chip (power semiconductor element).
  • the present invention can further reduce the size of the semiconductor module compared to the prior art, and can efficiently dissipate the heat of the semiconductor element, a method for manufacturing the semiconductor module, a drive device including the semiconductor module, and an electric power steering device The purpose is to provide.
  • the lead frame has a multilayer structure, and the power semiconductor element adopts a structure mounted on each layer. It came.
  • the present inventor has focused on the structure of a semiconductor module in which a power semiconductor element mounted on a circuit board or a lead frame is transfer molded and sealed using a curable resin of an epoxy-based material.
  • the present inventor has discovered a new structure and has come up with the present invention.
  • the present inventor has come to know that a structure in which a part of the bus bar is configured by a shunt resistor is adopted in the bus bar that plays a role of wiring in the semiconductor module in order to solve such a problem.
  • the lead frame has a multilayer structure, A power structure in which power semiconductor elements are alternately mounted and stacked on the lead frame, It is a structure in which a part of another lead frame is directly soldered to the upper surface electrode of the power semiconductor element and three-dimensional wiring is performed.
  • the power semiconductor elements are stacked and three-dimensionally wired, so that the projected area of the power semiconductor elements can be suppressed, and the same circuit configuration can be achieved while reducing the size of the conventional power module. be able to. Further, the wiring can be shortened (required length can be shortened), and the direct current resistance of the wiring member can be suppressed, which is advantageous in terms of circuit loss.
  • the upper power semiconductor element is mounted and laminated at a position offset from the periphery of the gate wiring in the lower layer power semiconductor element of the multilayer structure.
  • a notch for gate wiring is provided in a part of the upper lead frame of the power semiconductor element.
  • the lead frame is exposed to the outside from the surface of the mold constituting the semiconductor module. In such a case, the heat dissipation performance of the semiconductor module is improved.
  • the present invention relates to a semiconductor module,
  • the lead frame of the internal wiring material has a two-layered three-dimensional wiring structure, Power semiconductor elements and the two layers of lead frames are alternately stacked,
  • a part of the second-layer lead frame is a lead-out portion having a heat-radiating surface to the outside, which is led to the heat-dissipating surface of the first-layer lead frame.
  • the semiconductor module according to the present invention has a two-layered three-dimensional wiring structure, the wiring distance between power semiconductor elements in each layer can be shortened, and further, the connection bus bar between power semiconductors and the mounting space can be reduced. Therefore, it is possible to reduce the size of the power module.
  • the lead portion of the second layer lead frame has a shape that widens toward the heat dissipation surface of the second layer lead frame. In this case, the heat dissipation performance improves as the heat dissipation area increases.
  • the power semiconductor element disposed between the first-layer lead frame and the second-layer lead frame is connected to the first-layer lead frame and the second-layer lead via a solder layer. It may be electrically connected to the lead frame.
  • solder thickness of the power semiconductor element of the first layer can be controlled by appropriately changing the height of the lead-out portion with reference to the heat radiation surface of the lead-out portion of the second-layer lead frame. According to this, it is possible to suppress the variation in the solder thickness due to the deviation of the center of gravity in the second layer lead frame.
  • the second-layer lead frame in the semiconductor module is formed with a protruding portion that protrudes in a direction different from the thickness direction of the lead-out portion of the second-layer lead frame.
  • the two-layer structure makes the internal structure more complicated and the adhesion to the epoxy resin is more important than the single-layer structure.
  • the adhesion to the epoxy resin is improved and reliability (under high humidity environment) In this case, the reliability of the penetration of moisture into the mold and the cracking of the mold due to repeated thermal strain can be improved.
  • the protruding portion can be formed by a processed portion such as a protrusion or a crushed shape.
  • the lead-out portion of the second layer lead frame is made of a metal capable of storing transient heat generated by a power semiconductor element connected to the second layer lead frame. If it is made of a metal having good heat transfer properties, heat can be temporarily stored and quickly dissipated.
  • the present invention provides a semiconductor module, A part of the bus bar functioning as the wiring in the semiconductor module is composed of a shunt resistor for motor current detection, The shunt resistor for each phase is integrated into one bus bar.
  • an area for mounting the shunt resistor on the lead frame is secured separately from the power semiconductor element (transistor chip), and a wiring space from the power semiconductor element to the lead frame is secured.
  • the semiconductor module of the present invention it is sufficient to secure the wiring space of the bus bar integrated with the shunt resistor. For this reason, the size of the lead frame can be reduced, and the power module can be downsized.
  • the shunt resistor is preferably a rectangular plate.
  • both ends of the shunt resistor in the bus bar are flat.
  • the present invention provides a semiconductor module
  • the lead frame of the internal wiring material is a structure connected to the housing by a thermal interface material having adhesiveness
  • the semiconductor module is fixed to the housing.
  • Such a semiconductor module may have a resin-molded mold, and a spacer made of a convex portion may be formed on the surface of the mold to which the thermal interface material is applied.
  • the spacer made of a convex portion keeps the TIM at a constant thickness so that the gap between the surface of the mold and the housing is constant, and the strength of the adhesive force and the heat radiation performance exhibited by the TIM are maintained. Further, by appropriately changing the height of the convex portion, the gap between the semiconductor module and the housing can be managed to take insulation measures.
  • the convex portions are formed at least at three locations.
  • the drive device according to the present invention includes the semiconductor module as described above.
  • the electric power steering device according to the present invention is provided with the drive device as described above.
  • the present invention provides a semiconductor module
  • the lead frame has a multilayer structure, A wiring structure in which power semiconductor elements and the lead frames are alternately stacked,
  • the semiconductor module has a structure in which one lead frame is soldered to the lower surface electrode of the power semiconductor element and the other lead frame is soldered to the upper surface electrode, and three-dimensional wiring is performed.
  • the drive device includes a plurality of semiconductor modules as described above.
  • the electric power steering device according to the present invention is provided with the drive device as described above.
  • the present invention provides a method for manufacturing a semiconductor module,
  • the lead frame has a multilayer structure, Power semiconductor elements are alternately mounted on the lead frame and stacked, A part of another lead frame is directly soldered to the upper surface electrode of the power semiconductor element to form a three-dimensional wiring structure.
  • the present invention provides a method for manufacturing a semiconductor module,
  • the lead frame of the internal wiring material has a two-layered three-dimensional wiring structure,
  • the power semiconductor element and the two layers of lead frames are alternately stacked,
  • a part of the second-layer lead frame is used as a lead-out portion having a heat-radiating surface to the outside, which is led to the heat-dissipating surface of the first-layer lead frame.
  • the present invention provides a method for manufacturing a semiconductor module, A part of the bus bar functioning as wiring in the semiconductor module is configured with a shunt resistor for detecting motor current, The shunt resistor for each phase is integrated into one bus bar.
  • the present invention it is possible to further reduce the size as compared with the prior art, and to efficiently dissipate the heat of the semiconductor element.
  • FIG. 6 is a plan view showing gate wiring by a lead frame in a semiconductor module having a two-layer lead frame structure.
  • FIG. 3 is a side view of the semiconductor module shown in FIG. 2. It is a top view which shows about the gate wiring by a wire in the semiconductor module which is a 2 layer lead frame structure. It is a side view of the semiconductor module shown in FIG. It is sectional drawing which shows the outline of the structural example of the semiconductor module which is a 3 layer lead frame structure.
  • FIG. 5 is a plan view showing gate wiring by a lead frame in a semiconductor module having a three-layer lead frame structure. It is a side view of the semiconductor module shown in FIG.
  • FIG. 6 is a cross-sectional view showing a configuration example of a semiconductor module having a two-layer lead frame structure and achieving high heat dissipation of a lead-out portion.
  • FIG. 3 is a cross-sectional view showing a configuration example of a semiconductor module having a two-layer lead frame structure in which adhesion between a lead-out portion and an epoxy resin is improved.
  • It is sectional drawing which shows an example of a structure of the semiconductor module which concerns on 3rd Embodiment of this invention.
  • It is a perspective view which shows an example of a bus bar.
  • FIG. 1 It is a figure which shows an example (5th form of a lead frame) of the cross-section of a semiconductor module. It is a figure which expands and shows the reverse-gradient part (warping shape part) of the side surface of a lead frame. It is a figure which shows the time series data of thermal resistance increase at the time of changing the thickness of a lead frame. It is a figure which shows the time series data of the thermal resistance comparison at the time of changing the thickness of a lead frame. It is a figure which shows the outline of the cross-sectional structure of the conventional semiconductor module for reference.
  • FIGS. 1 to 9 a preferred embodiment of a semiconductor module according to the present invention will be described in detail with reference to the drawings (see FIGS. 1 to 9).
  • components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.
  • a semiconductor module (power module) 1 having an inverter circuit (not shown) for driving a motor 50 includes a power semiconductor element (semiconductor chip) 2, a lead frame 3, solder 5, and a resin mold 6. .
  • the first layer is 3A with 3 added to the reference numeral 3A
  • the second layer is 3B with 3 added to the reference numeral 3B
  • the third layer Represents 3 as C by adding C to 3. The same applies to the gate lead frame 4 described later.
  • the power semiconductor element 2 is a MOSFET and indicates a Si or SiC bare chip (bare die) state. Since the power semiconductor element 2 has a structure in which current flows in the thickness direction, it has a structure having electrodes on the upper and lower surfaces of the bare chip, and wiring is performed by wire bonding using solder, curable conductive paste, aluminum, or gold wire.
  • the “upper surface” and “lower surface” in this specification are based on the lead frame 3, and even if the semiconductor module 1 is arranged upside down, there is no change in the vertical positional relationship.
  • the lead frame 3 is a component that supports the power semiconductor element 2 fixed on the lead frame 3 and is connected to external wiring, and is formed into an arbitrary pattern shape by press molding in order to perform a desired circuit operation.
  • the semiconductor module 1 according to the present embodiment has a multilayer structure including a plurality of lead frames 3.
  • the power semiconductor elements 2 are mounted in a state of being alternately stacked on the lead frame 3 (3A). Further, the gate electrode (upper surface electrode) 2G of the power semiconductor element 2 has a three-dimensional wiring structure in which a part of the lead frame 3 (3B) of another layer is directly soldered.
  • the gate electrode (upper surface electrode) 2G of the power semiconductor element 2 has a three-dimensional wiring structure in which a part of the lead frame 3 (3B) of another layer is directly soldered.
  • FIG. 1 shows a semiconductor module 1 having a two-layer structure.
  • the lowermost layer is a lead frame 3A, on which solder 5, power semiconductor element 2 (2A), solder 5, second-layer lead frame 3B, solder 5, and power semiconductor element 2 (2B) are alternately stacked and mounted. To do.
  • the signal wiring of the power semiconductor element 2 for example, the gate signal wiring of the FET will be described.
  • the signal lead frame 3 ⁇ / b> E connected to the outside is connected to the gate electrode 2 ⁇ / b> G of the power semiconductor element 2 ⁇ / b> A by the wire 7.
  • the source electrode 2S of the power semiconductor element 2A is connected to the second-layer lead frame 3B by soldering, and the drain electrode (lower surface electrode) of the power semiconductor element 2A is connected to the first-layer lead frame 3A by soldering. Further, a part of the lead frame 3B of the second layer is cut out to form a cutout portion 8N, and wire bonding is performed.
  • 2 to 5 represent the first layer power semiconductor element 2A and the first layer lead frame 3A.
  • the power semiconductor element 2B in the second layer (upper layer) is mounted at a position offset with respect to the power semiconductor element 2A in the first layer (lower layer), and is connected to the outside from the gate electrode of the power semiconductor element 2B using the wire 7.
  • the first layer (lower layer) power semiconductor element 2A is connected to the connected first layer signal lead frame 3E and from the source electrode 2S of the power semiconductor element 2B to the other second layer lead frame 3D. It is preferable to mount the second layer (upper layer) power semiconductor element 2B at a position offset from the periphery of the gate wiring in FIG.
  • the drain electrode (lower surface electrode) of the power semiconductor element 2B in the second layer (upper layer) is connected to the second layer lead frame 3B by soldering.
  • a structure in which a part of the second-layer lead frame 3B (second-layer gate lead frame 4B) is soldered to the gate electrode 2G may be employed.
  • the portion to be soldered to the gate electrode 2G may be a part of the first lead frame 3A.
  • the tip shape of a part of the second-layer gate lead frame 4B or the first-layer lead frame 3A connected to the gate electrode 2G avoids contact with the source electrode on the same surface (ie, electrical short). Therefore, it is desirable that the size is smaller than the gate electrode size.
  • a part of the second-layer lead frame 3B is cut out to form a cut-out portion 8N, and the second-layer gate lead frame 4B and the gate electrode 2G are soldered.
  • the power semiconductor element 2B in the second layer (upper layer) is mounted at a position offset with respect to the power semiconductor element 2A in the first layer (lower layer), and is connected to the outside from the gate electrode of the power semiconductor element 2B using the wire 7.
  • the first layer (lower layer) power semiconductor element 2A is connected to the connected first layer signal lead frame 3E and from the source electrode 2S of the power semiconductor element 2B to the other second layer lead frame 3D. It is preferable to mount the second layer (upper layer) power semiconductor element 2B at a position offset from the periphery of the gate wiring in FIG.
  • the drain electrode (lower surface electrode) of the power semiconductor element 2B in the second layer (upper layer) is connected to the second layer lead frame 3B by soldering.
  • the power semiconductor element 2 and the lead frame 3 (3A, 3B) are sealed by transfer molding using an epoxy-based thermosetting resin, and the semiconductor module (power module) 1 is completed.
  • the wiring of the source electrode (upper surface electrode) 2S of the second-layer power semiconductor element 2 (2B) needs to be performed by wire bonding as shown in FIG.
  • the wiring volume can be increased as compared with the wire, and the improvement of the heat radiation characteristic is expected.
  • a part of the surface of the lead frame 3A of the first layer (for example, one side near the end) and a part of the surface of the lead frame 3C of the third layer (for example, near the end)
  • One or both of one side may be molded so as to be exposed to the outside. In such a case, it is possible to radiate heat from one side or both sides of the semiconductor module (power module) 1 to the outside.
  • FIG. 9 shows another embodiment of the two-layer structure semiconductor module 1.
  • FIG. 10 shows an example of a cross section of the two-layer structure semiconductor module 1.
  • FIG. 11 is an exploded perspective view for explaining the two systems of the semiconductor module 1.
  • the power semiconductor element 2C on the high potential side in the inverter circuit and the power semiconductor element 2E for use as a motor cutoff relay assuming a failure are mounted on the first layer lead frame 3P, and the low potential of the inverter circuit is mounted on the second layer lead frame 3Q.
  • the side power semiconductor element 2F is mounted.
  • a part of the second-layer lead frame 3Q is soldered to the plurality of power semiconductor elements 2C and 2E on the first-layer lead frame 3P, and wiring between the power semiconductor elements is performed.
  • the second-layer lead frame 3Q shown in FIG. 10 has a T-shaped cross section, but as long as it can be wired to the plurality of power semiconductor elements 2C and 2E on the first-layer lead frame 3P, Absent.
  • the source electrode (upper surface electrode) 2S of the power semiconductor element 2F on the second-layer lead frame 3Q is wired by the low potential side of the first-layer lead frame 3P, that is, the ground side, and the bus bar 9.
  • the bus bar 9 is wired to a plurality of power semiconductor elements 2F on the lower potential side, and has a more efficient structure than wiring between the power semiconductor elements 2F on the lower potential side and the ground.
  • an Nch-MOSFET having a gate and a source on the same surface has been described as an example.
  • the present invention can also be implemented with a Pch-MOSFET.
  • a part of the bus bar 9 may be a shunt resistor for current detection.
  • each low-potential side power semiconductor element 2 is arranged between the ground and a method in which one shunt resistor is arranged between the ground where the low-potential side wiring of each low-potential side power semiconductor element 2 joins. is there.
  • the signal input part of the power semiconductor element 2 is wired to the signal lead frame 3 provided in one side direction using the wire 7 and is epoxy-molded to complete the semiconductor module (power module) 1.
  • illustration of the mold outer shape is omitted in FIGS.
  • reference numeral 14 denotes a control board
  • reference numeral 16 denotes a noise countermeasure capacitor and coil
  • reference numeral 18 denotes a junction box.
  • the junction box 18 serves as a power source, a sensor, and a communication connector, and also serves as a case for components such as the control board 16 and the semiconductor module 1.
  • the semiconductor module 1 of the present embodiment suppresses the projected area of the power semiconductor element 2 by stacking the power semiconductor elements 2 and three-dimensionally wiring them. For this reason, even when it is set as the same circuit structure as the past, it can be reduced in size compared with the conventional power module. In addition, since the length of the wiring can be made shorter than before, the direct current resistance of the wiring member can be suppressed and the circuit loss can be reduced.
  • Such a semiconductor module 1 can be used in various industrial machines such as the electric power steering device 100 (see FIG. 12), various driving devices, and a vehicle in which these are mounted.
  • the electric power steering apparatus 100 illustrated in FIG. 12 is of a column type, for example.
  • symbol H is a steering wheel
  • symbol 10a is a steering input shaft
  • symbol 10b is a steering output shaft
  • symbol 11 is a rack and pinion motion conversion mechanism
  • symbol 13 is a worm reduction mechanism
  • symbol 20 is a housing
  • symbol 21 is
  • Reference numeral 30 denotes a steering shaft
  • reference numerals 40 and 41 denote universal joints
  • reference numeral 42 denotes a connecting member.
  • the semiconductor module 1 described above can be manufactured as follows. That is, a plurality of lead frames 3 have a multi-layer structure, and power semiconductor elements 2 are alternately mounted on the lead frame 3 and stacked, and another lead frame (that is, an upper electrode) 2G of the power semiconductor elements 2 is provided. A part of the lead frame 3 different from the lead frame 3 on which the power semiconductor element 2 is mounted is directly soldered to form a structure for three-dimensional wiring. Based on the above procedure, the semiconductor module 1 having a structure in which the projected area of the power semiconductor element 2 is suppressed can be obtained.
  • a semiconductor module (power module) 1 having an inverter circuit (not shown) for driving the motor 50 includes a power semiconductor element (semiconductor chip) 2, a lead frame 3, solder 5, a resin mold 6, a bus bar 7, and the like. It is configured.
  • the power semiconductor element 2 is a MOSFET, for example, and refers to a Si or SiC bare chip (bare die). Since this power semiconductor element 2 has a structure in which current flows in the thickness direction, it has a structure having electrodes on the upper and lower surfaces of the bare chip, and is wired by wire bonding using solder 5, curable conductive paste, aluminum or gold wire. .
  • the “upper surface” and “lower surface” in this specification are based on the lead frame 3, and even if the semiconductor module 1 is arranged upside down, there is no change in the vertical positional relationship.
  • the lead frame 3 is a component (internal wiring material) that supports the power semiconductor element 2 fixed on the lead frame 3 and is connected to external wiring, and has an arbitrary pattern shape by press molding to perform a desired circuit operation. Formed.
  • the lead frame 3 has a two-layered three-dimensional wiring structure (see FIG. 13).
  • the lead frame for the first layer is denoted by reference numeral 31
  • the lead frame for the second layer is denoted by reference numeral 32.
  • the power semiconductor element 2 is mounted in a state of being alternately stacked on the two-layer lead frame 3 (31, 32).
  • the first power semiconductor element (two) is denoted by reference numeral 21, and the first and second power semiconductor elements are denoted by reference numeral 22.
  • the lowermost layer is the first lead frame 31, and the solder 5, the first power semiconductor element 21, the solder 5, the second lead frame 32, the solder 5, and the second power semiconductor element 22 are arranged on the first lead frame 31. Laminated.
  • the first-layer power semiconductor element 21 is interposed between the first-layer lead frame 31 and the second-layer lead frame 32.
  • the power semiconductor element 22 in the second layer is wired to the first lead frame 31 by soldering using the bus bar 7. Thereafter, the power semiconductor element 2 and the lead frame 3 are sealed to form a mold 6 by transfer molding using an epoxy thermosetting resin, and the semiconductor module 1 is completed.
  • One side of the first-layer lead frame 31 (the side on which the power semiconductor element 2 is not mounted) has a structure that is molded so as to have a heat radiating surface 31S exposed to the outside. As a result, a part of the semiconductor module 1 becomes a heat radiable surface and can be radiated to the outside.
  • the drain electrode is a lower surface electrode and the source electrode is an upper surface electrode, so that the wiring from the upper arm to the lower arm MOSFET is connected to the upper surface of the upper arm MOSFET.
  • a wiring can be formed from a certain source electrode to the drain electrode on the lower surface of the lower arm FET through the second-layer lead frame 32. Further, the wiring from the second layer lead frame 32 to the source electrode on the upper surface of the motor cutoff MOSFET can be simultaneously performed.
  • a part of the second-layer lead frame 32 is led out to the heat radiation surface 31S of the first-layer lead frame 31, and serves as a lead-out portion 32H having a heat radiation surface 32S to the outside (see FIG. 13).
  • the lead 32H can dissipate heat from the power semiconductor element 22 mounted on the second layer. Furthermore, as shown in FIG. 14, by expanding the shape of the lead-out portion 32H in the stacking direction of the lead frame 3, the area of the heat radiating surface 32S is increased, and the heat dissipation is improved.
  • the lead-out part 32H is made of a metal having good thermal conductivity, for example, copper, and can function as a heat capacity for temporarily storing a certain amount of heat while functioning as a heat dissipation path.
  • the heat radiating surface 32S of the lead-out portion 32H is formed so as to be flush with the heat radiating surface 31S of the first layer lead frame 31.
  • the thickness of the solder 5 in the first-layer power semiconductor element 21 can be controlled by adjusting the lead-out portion height A with reference to the heat radiating surface 32S.
  • the second-layer lead frame during soldering 32 sinks in the direction of the heat radiating surface 32S due to its own weight, and the solder thickness of the power semiconductor element 21 in the first layer is naturally determined according to the height A of the second layer with respect to the heat radiating surface 32S. Become.
  • the second-layer lead frame 32 has a T-shaped cross-sectional shape as shown in the figure and can be symmetric so that the center of gravity can be stabilized and the wiring distance can be made equal. You can also plan.
  • the internal structure becomes complicated due to the two-layer structure of the semiconductor module 1, and the adhesion with the epoxy resin is more important than the single-layer structure. Therefore, by providing the protruding portion 32T made of a protrusion, a crushed shape, or the like on a part of the lead-out portion 32H, an anchor effect with an epoxy resin as a molding material can be generated, and the adhesion reliability can be improved.
  • the protruding portion 32T protrudes in a direction different from the thickness direction (the direction of the height A) of the lead-out portion 32H of the second-layer lead frame 32, for example, a direction orthogonal thereto.
  • a similar protrusion 32T may be formed in a portion other than the lead-out portion 32H of the second layer lead frame 32 (see FIG. 15).
  • the semiconductor module 1 according to the present embodiment has the same circuit configuration because the power semiconductor elements 2 (21, 22) are stacked and the three-dimensional wiring can suppress the projected area of the power semiconductor elements 2 (21, 22) and the bus bar. However, it can be made smaller than conventional power modules.
  • Such a semiconductor module 1 can be used in various industrial machines such as the electric power steering device 100 (see FIG. 12), various driving devices, and a vehicle in which these are mounted.
  • the electric power steering apparatus 100 illustrated in FIG. 12 is of a column type, for example.
  • symbol H is a steering wheel
  • symbol 10a is a steering input shaft
  • symbol 10b is a steering output shaft
  • symbol 11 is a rack and pinion motion conversion mechanism
  • symbol 13 is a worm reduction mechanism
  • symbol 20 is a housing
  • symbol 21 is
  • Reference numeral 30 denotes a steering shaft
  • reference numerals 40 and 41 denote universal joints
  • reference numeral 42 denotes a connecting member.
  • the semiconductor module 1 described above can be manufactured as follows. That is, the lead frame 3 (31, 32) as the internal wiring material has a two-layered three-dimensional wiring structure, and the power semiconductor element 2 (21, 22) and the two layers of the lead frame 3 (31, 32) are alternately stacked.
  • the bus 5 is connected with the solder 5 in an electrically connected state, and the mold 6 is formed by sealing the power semiconductor element 2 and the lead frame 3 by transfer molding using an epoxy thermosetting resin.
  • the second-layer lead frame 32 includes a lead frame that is a lead-out portion 32H having a part led to the heat radiation surface 31S of the first layer lead frame 31 and having the heat radiation surface 32S to the outside. adopt.
  • the semiconductor module 1 is configured as a power module having an inverter circuit (not shown) for driving the motor 50.
  • the semiconductor module 1 of the present embodiment includes a power semiconductor element 2, a lead frame 3, solder 5, a mold 6, wires 7, a bus bar 8, and a shunt resistor 92 (see FIG. 16).
  • the power semiconductor element 2 is, for example, a MOSFET, and is made of a bare chip (bare die) of Si, SiC, or GaN. Since this power semiconductor element 2 has a structure in which current flows in the thickness direction, it has a structure having electrodes on the upper and lower surfaces of the bare chip, and is wired by wire bonding using solder 5, curable conductive paste, aluminum or gold wire. .
  • the “upper surface” and “lower surface” in this specification are based on the lead frame 3, and even if the semiconductor module 1 is arranged upside down, there is no change in the vertical positional relationship.
  • the lead frame 3 is a component that supports the power semiconductor element 2 fixed on the lead frame 3 and is connected to external wiring, and is formed into an arbitrary pattern shape by press molding in order to perform a desired circuit operation.
  • the bus bar 8 is formed in a three-pronged shape corresponding to the three-phase inverter (see FIG. 17), and is disposed on the current detection path in the inverter circuit.
  • a part of the bus bar 8 of the present embodiment is configured by a shunt resistor 92.
  • the shunt resistor 92 of each phase in the three-phase inverter is integrated into one bus bar 8 (see FIG. 17).
  • the portion 8A at both ends of the shunt resistor 92 in the bus bar 8 has a structure having flat portions (see FIG. 17). This facilitates wiring by wire bonding at both ends of the shunt resistor 92.
  • Such a bus bar 8 is made of copper or copper alloy having high conductivity.
  • the shunt resistor 92 is made of a material such as Cu—Ni or Cu—Mn.
  • the shunt resistor 92 is adjusted in cross-sectional area and length so as to have an arbitrary resistance value, and the shape is determined. In this regard, it is preferable that the shunt resistor 92 has a rectangular plate shape in plan view (see FIGS. 16 and 17). A part of the shunt resistor 92 and a part of the bus bar 8 are integrated by welding or brazing.
  • the integrated bus bar 8 is mounted by soldering between the upper electrode of the power semiconductor element and the lead frame 3 having the GND potential (see FIG. 16).
  • the current is detected based on the voltage across the shunt resistor 92.
  • wiring can be performed from both end portions near the shunt resistor 92 of the bus bar 8 to a lead frame terminal connected to an external control board (not shown) (see FIG. 16). ).
  • the power semiconductor element 2 mounted on the lead frame 3 is sealed with a mold 6 by transfer molding using a curable resin of an epoxy material, and the semiconductor module 1 is completed.
  • the semiconductor module 1 of the present embodiment described above it is only necessary to secure a wiring space of the bus bar 8 in which the shunt resistor 92 is integrated.
  • the shunt resistor is provided separately from the power semiconductor element. There is no need to secure an area for mounting on top, and there is no need to secure a wiring space from the power semiconductor element to the lead frame. For this reason, the size of the lead frame 3 can be suppressed (miniaturized), and thus the semiconductor module 1 can be miniaturized.
  • Such a semiconductor module 1 can be used in various industrial machines such as the electric power steering device 100 (see FIG. 12), various driving devices, and a vehicle in which these are mounted.
  • the electric power steering apparatus 100 illustrated in FIG. 12 is of a column type, for example.
  • symbol H is a steering wheel
  • symbol 10a is a steering input shaft
  • symbol 10b is a steering output shaft
  • symbol 11 is a rack and pinion motion conversion mechanism
  • symbol 13 is a worm reduction mechanism
  • symbol 20 is a housing
  • symbol 21 is
  • Reference numeral 30 denotes a steering shaft
  • reference numerals 40 and 41 denote universal joints
  • reference numeral 42 denotes a connecting member.
  • a semiconductor module (power module) 1 having an inverter circuit (not shown) for driving the motor 50 includes a power semiconductor element (also simply referred to as a semiconductor element in this specification) 2, a lead frame 3, solder 5, and resin. It consists of a mold 6 or the like.
  • the power semiconductor element 2 is, for example, a MOSFET, and indicates a Si, SiC, or GaN bare chip (bare die) state. Since this power semiconductor element 2 has a structure in which current flows in the thickness direction, it has a structure having electrodes on the upper and lower surfaces of the bare chip, and is wired by wire bonding using solder 5, curable conductive paste, aluminum or gold wire. .
  • the “upper surface” and “lower surface” in this specification are based on the lead frame 3, and even if the semiconductor module 1 is arranged upside down, there is no change in the vertical positional relationship.
  • the lead frame 3 is a component (internal wiring material) that supports the power semiconductor element 2 fixed on the lead frame 3 and is connected to external wiring, and has an arbitrary pattern shape by press molding to perform a desired circuit operation. Formed.
  • the lead frame 3 of the present embodiment has an inverted T-shaped cross section, and a part of the lead frame 3 protrudes outside the mold 6 (see FIG. 18).
  • the semiconductor module 1 is fixed to the housing 10 via the TIM 4 (see FIG. 18).
  • the TIM 4 is a member that fills a small gap or unevenness between a device that generates heat (the power semiconductor element 2) and the heat sink and efficiently transfers heat to the heat sink.
  • the TIM 4 in the present embodiment includes the lead frame 3 and the housing 10. The heat generated by the power semiconductor element 2 is transmitted to the housing 10 via the solder 5 and the lead frame 3 (see FIG. 18).
  • the TIM 4 of this embodiment has adhesiveness, and keeps the lead frame 3 and the housing 10 in a close contact state.
  • a two-component curable resin having heat conductivity, a one-component curable resin, a resin-based adhesive film (for example, a paste adhesive, a compound material, an epoxy film, etc.) can be used. It can be used by applying to the surface.
  • the lead frame 3 does not need to be fixed to the housing 10 with screws.
  • the mold 6 is formed so as to seal the power semiconductor element 2 and the lead frame 3 by transfer molding using an epoxy thermosetting resin (see FIG. 18).
  • the convex part 61 which functions as a spacer is formed in the surface to which the above-mentioned TIM4 is applied in the mold 6 (see FIG. 18).
  • the convex portion 61 makes the gap (gap) between the surface of the mold 6 and the housing 10 constant, and makes the thickness of the TIM 4 uniform.
  • TIM4 demonstrates the adhesive force and heat dissipation performance according to the said thickness. Therefore, by appropriately changing the height of the convex portion 61, it is possible to adjust the adhesive force and the heat dissipation performance, and also to manage the size of the gap between the semiconductor module 1 and the housing 10 to appropriately insulate. Measures can be taken.
  • the convex portion 61 is formed with a convex shape as a part of the contact surface with the housing 10 at the time of molding, and the height of the convex portion 61 is 50 [ ⁇ m] for each TIM 4 to be used. It is changed to ⁇ 200 [ ⁇ m], and has a configuration of two or more points having a stable installation surface from the size of the semiconductor module 1 and the contact area with the housing 10.
  • three convex portions 61 (see FIG. 19) arranged so as to unambiguously define a gap between the surface of the mold 6 and the housing 10 are substantially rectangular. Further, there are four convex portions 61 (see FIG. 20) arranged at the four corners of the mold 6.
  • such a convex part 61 may be comprised integrally with the mold 6 at the time of resin molding, and may be comprised by attaching another member after shaping
  • the screw will loosen due to the creep phenomenon of the resin part of the mold and the heat dissipation performance will deteriorate, the screw fixing part will be placed near the semiconductor element, and the lead frame will be routed around the semiconductor
  • the semiconductor module 1 of the present embodiment does not have such a problem. That is, a structure that solves the above problems by selecting a material that has high adhesiveness, high heat conductivity, insulation, heat resistance, and stress resistance by performing pressurization, heat fixing, etc. Can be realized.
  • the lead frame 3 can be fixed to the housing 10 without screwing, the area required for providing screw holes and the like is omitted. It is possible to reduce the size. Further, if the semiconductor module 1 is fixed and radiated by using the TIM 4, it is possible to obtain a device having a uniform radiating structure while suppressing the number of parts. Furthermore, according to the present embodiment, since the miniaturized semiconductor module 1 is configured to be bonded and fixed, the semiconductor module 1 can be disposed anywhere in the housing 10, and the ease of layout and the degree of freedom are improved.
  • Such a semiconductor module 1 can be used in various industrial machines such as the electric power steering device 100 (see FIG. 12), various driving devices, and a vehicle in which these are mounted.
  • the electric power steering apparatus 100 illustrated in FIG. 12 is of a column type, for example.
  • symbol H is a steering wheel
  • symbol 10a is a steering input shaft
  • symbol 10b is a steering output shaft
  • symbol 11 is a rack and pinion motion conversion mechanism
  • symbol 13 is a worm reduction mechanism
  • symbol 20 is a housing
  • symbol 21 is
  • Reference numeral 30 denotes a steering shaft
  • reference numerals 40 and 41 denote universal joints
  • reference numeral 42 denotes a connecting member.
  • a semiconductor module (power module) 1 having an inverter circuit (not shown) for driving the motor 50 includes a power semiconductor element (also simply referred to as a semiconductor element in this specification) 2, a lead frame 3, solder 5, and resin. It consists of a mold 6 and screws 94.
  • the power semiconductor element 2 is, for example, a MOSFET, and indicates a Si, SiC, or GaN bare chip (bare die) state. Since this power semiconductor element 2 has a structure in which current flows in the thickness direction, it has a structure having electrodes on the upper and lower surfaces of the bare chip, and is wired by wire bonding using solder 5, curable conductive paste, aluminum or gold wire. .
  • the “upper surface” and “lower surface” in this specification are based on the lead frame 3, and even if the semiconductor module 1 is arranged upside down, there is no change in the vertical positional relationship.
  • the lead frame 3 is a component (internal wiring material) that supports the power semiconductor element 2 fixed on the lead frame 3 and is connected to external wiring, and has an arbitrary pattern shape by press molding to perform a desired circuit operation. Formed. Both ends of the lead frame 3 of the present embodiment protrude to the outside of the mold 6 and are bent upward (the side where the semiconductor element 2 is present when viewed from the lead frame 3) (see FIG. 21).
  • the semiconductor module 1 is fixed to the housing 10 via a TIM (thermal interface material) 4 (see FIG. 21).
  • the TIM (thermal interface material) 4 is a member that fills small gaps and irregularities between the heat generating device (power semiconductor element 2) and the heat sink and efficiently transfers heat to the heat sink.
  • the TIM 4 in this embodiment is a lead.
  • the heat generated by the power semiconductor element 2 is interposed between the frame 3 and the housing 10 and is transmitted to the housing 10 through the solder 5 and the lead frame 3 (see FIG. 21).
  • the mold 6 is formed so as to seal the power semiconductor element 2 and the lead frame 3 by transfer molding using an epoxy thermosetting resin (see FIG. 21).
  • the screw 94 screws the molded mold 6 and the housing 10 and keeps the lead frame 3 and the TIM 4 and the TIM 4 and the housing 10 in close contact with each other.
  • the lead frame 3 is configured such that the thickness thereof changes in the middle (see FIG. 22 and the like). 1 is formed so that at least a region including the power semiconductor element 2 is thicker than other portions in the vicinity of the heating element, that is, the power semiconductor element 2 in the semiconductor module 1 (see FIG. 22 and the like). . Thereby, measures against transient heat caused by heat generation of the power semiconductor element 2 and improvement of mold adhesion can be achieved.
  • a convex portion 3s is formed on the surface of the lead frame 3 opposite to the side facing the mold 6, that is, the surface facing the housing 10 side. (See FIG. 21). In this case, heat can be efficiently transferred to the TIM 4 via the convex portion 3s, and the heat dissipation performance is improved.
  • a convex portion 3t is formed on the lead frame 3 on the side facing the mold 6, and the lead frame 3 is so-called convex (see FIG. 22).
  • the contact area of the lead frame 3 with the mold 6 can be increased, and the adhesion with the mold 6 can be improved.
  • the convex portion 3s is formed on the surface of the lead frame 3 facing the housing 10 side, and the convex portion 3t is formed on the side facing the mold 6 ( (See FIG. 23).
  • the lead frame 3 has the advantages of the first and second embodiments described above.
  • a convex portion 3t is formed on the lead frame 3, and the side surface 3u of the convex portion 3t has a reverse gradient (see FIG. 24).
  • the lead frame 3 has a wedge shape or a reverse taper shape that is wider toward the top, so that the adhesion performance with the mold 6 is further improved and is difficult to come off.
  • all the side surfaces 3u of the convex portion 3t may have a reverse gradient, or a part of the side surface 3u may have a partial reverse gradient.
  • an angle formed by the side surface 3u of the convex portion 3t and the surface of the lead frame 3 is A (see FIG. 26).
  • the angle A in the portion where the side surface C has an inverse slope (curved shape portion) is less than 90 °.
  • the convex portion 3s is formed on the surface of the lead frame 3 facing the housing 10, the convex portion 3t is formed on the side facing the mold 6, and the convex portion 3t.
  • the side surface 3u has a reverse slope (see FIG. 25).
  • the lead frame 3 has the advantages of the third and fourth embodiments described above.
  • various power semiconductor elements 2 are compared with the conventional structure by appropriately changing the thickness of the lead frame 3 that functions as an internal wiring material. It becomes possible to cope with the heat generation. Further, the semiconductor module 1 can be further miniaturized by arranging a heat capacity (a part of the lead frame 3 that functions as the convex portion 3s, 3t) at an appropriate position. Further, when the thickness of the lead frame 3 is locally changed, at least a part of the stepped portion is formed in a warped shape having a reverse gradient, thereby improving the adhesion with the mold 6.
  • Such a semiconductor module 1 can be used in various industrial machines such as the electric power steering device 100 (see FIG. 12), various driving devices, and a vehicle in which these are mounted.
  • the electric power steering apparatus 100 illustrated in FIG. 12 is of a column type, for example.
  • symbol H is a steering wheel
  • symbol 10a is a steering input shaft
  • symbol 10b is a steering output shaft
  • symbol 11 is a rack and pinion motion conversion mechanism
  • symbol 13 is a worm reduction mechanism
  • symbol 20 is a housing
  • symbol 21 is
  • Reference numeral 30 denotes a steering shaft
  • reference numerals 40 and 41 denote universal joints
  • reference numeral 42 denotes a connecting member.
  • At least a part of the side surface 3u of the convex portion 3t of the lead frame 3 has an inverse slope, but similarly, at least a part of the side surface of the convex portion 3s of the lead frame 3 is formed.
  • a reverse gradient may be used.
  • the lead frame 3 has an arbitrary pattern shape by press molding in order to perform a desired circuit operation, and the power semiconductor element 2 or the like by transfer molding using an epoxy thermosetting resin.
  • the lead frame 3 was sealed to obtain a power module.
  • a plurality of thicknesses of the lead frame 3 constituting the semiconductor module 1 were prepared, and the thermal resistance when the thickness was changed corresponding to the heat generated from the power semiconductor element 2 was obtained by analysis. Based on the thermal resistance of the lead frame 3 having a certain thickness as a reference, the result was expressed using the ratio when the thickness was changed.
  • the present invention is suitable for application to various industrial machines such as electric power steering, various drive devices, and semiconductor modules in vehicles equipped with these.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

La présente invention concerne un module à semi-conducteurs dans lequel : une grille de connexion (3 (31, 32)) d'un matériau de câblage interne présente une structure de câblage tridimensionnelle bicouche ; des éléments semi-conducteurs de puissance (2 (21, 22)) et les grilles de connexion bicouches (3 (31, 32)) sont stratifiés en alternance ; et une partie de la grille de connexion de seconde couche (32) s'étend vers une surface de dissipation de chaleur (31S) de la grille de connexion de première couche (31) de manière à former une partie de sortie (32H) qui présente une surface de dissipation de chaleur (32S) permettant de dissiper la chaleur vers l'extérieur.
PCT/JP2017/005281 2017-02-14 2017-02-14 Module à semi-conducteurs et son procédé de production, dispositif d'entraînement équipé du module à semi-conducteurs et dispositif de direction assistée électrique WO2018150449A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/005281 WO2018150449A1 (fr) 2017-02-14 2017-02-14 Module à semi-conducteurs et son procédé de production, dispositif d'entraînement équipé du module à semi-conducteurs et dispositif de direction assistée électrique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2017/005281 WO2018150449A1 (fr) 2017-02-14 2017-02-14 Module à semi-conducteurs et son procédé de production, dispositif d'entraînement équipé du module à semi-conducteurs et dispositif de direction assistée électrique

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026251A (ja) * 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
JP2004140068A (ja) * 2002-10-16 2004-05-13 Nissan Motor Co Ltd 積層型半導体装置およびその組み立て方法
JP2004296663A (ja) * 2003-03-26 2004-10-21 Denso Corp 半導体装置
JP2008235589A (ja) * 2007-03-20 2008-10-02 Toyota Motor Corp 半導体装置とその半導体装置をパッケージする方法
JP2009043820A (ja) * 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
JP2010283236A (ja) * 2009-06-05 2010-12-16 Renesas Electronics Corp 半導体装置
JP2014053457A (ja) * 2012-09-07 2014-03-20 Toyota Industries Corp 半導体モジュール
JP2014072316A (ja) * 2012-09-28 2014-04-21 Mitsubishi Electric Corp パワーモジュール及びこれを用いた駆動装置
JP2016014596A (ja) * 2014-07-02 2016-01-28 株式会社ジェイテクト 電流検出装置
JP2016197677A (ja) * 2015-04-06 2016-11-24 三菱電機株式会社 パワー半導体装置および車載用回転電機の駆動装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026251A (ja) * 2000-07-11 2002-01-25 Toshiba Corp 半導体装置
JP2004140068A (ja) * 2002-10-16 2004-05-13 Nissan Motor Co Ltd 積層型半導体装置およびその組み立て方法
JP2004296663A (ja) * 2003-03-26 2004-10-21 Denso Corp 半導体装置
JP2008235589A (ja) * 2007-03-20 2008-10-02 Toyota Motor Corp 半導体装置とその半導体装置をパッケージする方法
JP2009043820A (ja) * 2007-08-07 2009-02-26 Rohm Co Ltd 高効率モジュール
JP2010283236A (ja) * 2009-06-05 2010-12-16 Renesas Electronics Corp 半導体装置
JP2014053457A (ja) * 2012-09-07 2014-03-20 Toyota Industries Corp 半導体モジュール
JP2014072316A (ja) * 2012-09-28 2014-04-21 Mitsubishi Electric Corp パワーモジュール及びこれを用いた駆動装置
JP2016014596A (ja) * 2014-07-02 2016-01-28 株式会社ジェイテクト 電流検出装置
JP2016197677A (ja) * 2015-04-06 2016-11-24 三菱電機株式会社 パワー半導体装置および車載用回転電機の駆動装置

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