WO2018124226A1 - Composition pour polissage, et procédé de polissage - Google Patents

Composition pour polissage, et procédé de polissage Download PDF

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Publication number
WO2018124226A1
WO2018124226A1 PCT/JP2017/047077 JP2017047077W WO2018124226A1 WO 2018124226 A1 WO2018124226 A1 WO 2018124226A1 JP 2017047077 W JP2017047077 W JP 2017047077W WO 2018124226 A1 WO2018124226 A1 WO 2018124226A1
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WO
WIPO (PCT)
Prior art keywords
polishing
polishing composition
mass
polyoxyalkylene
ether
Prior art date
Application number
PCT/JP2017/047077
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English (en)
Japanese (ja)
Inventor
規章 杉田
隆幸 松下
Original Assignee
ニッタ・ハース株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ニッタ・ハース株式会社 filed Critical ニッタ・ハース株式会社
Priority to JP2018559608A priority Critical patent/JP7061968B2/ja
Priority to CN201780074856.5A priority patent/CN110023449B/zh
Priority to KR1020197018210A priority patent/KR102508181B1/ko
Publication of WO2018124226A1 publication Critical patent/WO2018124226A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a polishing composition and a polishing method.
  • Polishing of a semiconductor wafer by CMP achieves high-precision smoothing and flattening by performing multi-stage polishing of three or four stages.
  • the main purpose is to reduce haze (surface haze) and minute defects.
  • the polishing composition used in the final polishing step of a semiconductor wafer generally contains a water-soluble polymer such as hydroxyethyl cellulose (HEC).
  • HEC hydroxyethyl cellulose
  • the water-soluble polymer has a role of making the surface of the semiconductor wafer hydrophilic, and suppresses damage to the semiconductor wafer due to adhesion of abrasive grains to the surface, excessive chemical etching, aggregation of abrasive grains, and the like. It is known that this can reduce haze and minute defects.
  • HEC uses cellulose, which is a natural raw material, and may contain water-insoluble impurities derived from cellulose. Therefore, in the polishing composition containing HEC, a minute defect may occur due to the influence of this impurity.
  • HEC having a molecular weight of about several hundred thousand to one million is often used.
  • Japanese Patent Application Laid-Open No. 2015-109423 describes a silicon wafer polishing composition containing 0.01 to 0.5 mass% of silica particles, a nitrogen-containing basic compound, and a water-soluble polymer.
  • the ratio of the number of oxygen atoms derived from hydroxyl groups to the number of oxygen atoms derived from polyoxyalkylene is 0.8 to 10.
  • Japanese Patent No. 4021080 discloses 0.5 to 10% by weight of a chelating compound or a salt thereof, 0.05 to 10% by weight of a partially esterified product and / or partially etherified product of a polyhydric alcohol compound, water, A polishing liquid composition containing the above is described.
  • An object of the present invention is to provide a polishing composition and a polishing method that can further reduce micro defects and haze of a polished wafer.
  • the polishing composition according to one embodiment of the present invention includes silica particles, an inorganic alkali compound, polyglycerin, and a polychain polyoxyalkylene alkyl ether.
  • the polychain alkyleneoxy ether is preferably at least one selected from polyoxyalkylene methyl glucoside and polyoxyalkylene polyglyceryl ether.
  • the inorganic alkali compound is at least one selected from an alkali metal hydroxide, an alkali metal salt, an alkaline earth metal hydroxide, and an alkaline earth metal salt. It may be.
  • a polishing method includes a step of finish polishing a silicon wafer using the above polishing composition and a foamed urethane pad having a hardness of 80 or less.
  • fine defects and haze of a polished wafer can be further reduced.
  • the present inventors conducted various studies in order to solve the above problems. As a result, the following knowledge was obtained.
  • the number of coarse particles tends to increase.
  • polyglycerin as a water-soluble polymer and containing a polychain polyoxyalkylene alkyl ether
  • the coarse particles in the polishing composition The number can be reduced.
  • the protection of the wafer is enhanced, and polishing that is softer and less damaging to the wafer can be performed.
  • the final polishing of a silicon wafer is usually performed using a suede type polishing pad.
  • fine defects can be further reduced by polishing using a urethane-type polishing pad.
  • the polishing composition according to one embodiment of the present invention includes silica particles, an inorganic alkali compound, polyglycerin, and a polychain polyoxyalkylene alkyl ether.
  • Silica particles are blended in the polishing composition as abrasive grains.
  • silica particles those commonly used in this field can be used, and for example, colloidal silica, fumed silica and the like can be used.
  • the content of the silica particles is not particularly limited, but is, for example, 0.15 to 20% by mass of the entire polishing composition.
  • the lower limit of the content of silica particles is preferably 0.3% by mass, and more preferably 1.5% by mass.
  • the upper limit of the content of silica particles is preferably 15% by mass, and more preferably 10% by mass.
  • An inorganic alkali compound is chemically polished by etching the surface of the wafer.
  • the inorganic alkali compounds include alkali metal hydroxides, alkali metal salts, alkaline earth metal hydroxides, alkaline earth metal salts, and the like.
  • the inorganic alkali compound is potassium hydroxide, sodium hydroxide, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate, potassium diphosphate, sodium tetraborate / decahydrate, etc.
  • Sodium carbonate is particularly preferred.
  • the inorganic alkali compounds described above may be used alone or in combination of two or more.
  • the total content of the inorganic alkali compounds is not particularly limited, but is, for example, 0.0003 to 1.2% by mass of the entire polishing composition.
  • the lower limit of the basic compound content is preferably 0.003% by mass.
  • the upper limit of the content of the basic compound is preferably 0.6% by mass.
  • the polishing composition according to the present embodiment contains polyglycerol as a water-soluble polymer.
  • Polyglycerin forms a dispersion medium together with an inorganic alkali compound and is adsorbed on the surface of silica particles and the wafer surface.
  • polishing with the silica particles becomes soft, and polishing scratches are suppressed.
  • adhesion of polishing scratches and foreign matters is suppressed.
  • the structure of polyglycerin is not particularly limited, and examples thereof include a linear type, a branched type, and a dendrimer type.
  • the weight average molecular weight of polyglycerin is not particularly limited, but is, for example, 100 to 20000.
  • the lower limit of the weight average molecular weight of the polyglycerol is preferably 300, more preferably 500.
  • the upper limit of the weight average molecular weight of polyglycerol is preferably 10,000, and more preferably 5,000.
  • the content of polyglycerin is not particularly limited, but is, for example, 0.15 to 3% by mass of the entire polishing composition.
  • the lower limit of the polyglycerol content is preferably 0.2% by mass, and more preferably 0.3% by mass.
  • the upper limit of the content of polyglycerin is preferably 2.5% by mass, and more preferably 2.0% by mass.
  • the polishing composition according to the present embodiment contains a multi-chain polyoxyalkylene alkyl ether.
  • polyoxyalkylene alkyl ethers of multi-chain type are alkylene oxide derivatives of methyl glucoside (polyoxyalkylene methyl glucoside), polyoxyalkylene glyceryl ether, polyoxyalkylene diglyceryl ether, polyoxyalkylene polyglyceryl ether, polyoxy Alkylene pentaerythritol ether, polyoxyalkylene trimethylolpropane, polyoxypropylene sorbite, and the like.
  • examples thereof include glyceryl ether, polyoxyethylene polyglyceryl ether, polyoxypropylene polyglyceryl ether, polyoxyethylene polyoxypropylene pentaerythritol ether, polyoxyethylene polyoxypropylene trimethylolpropane, and polyoxypropylene sorbitol.
  • polyoxyalkylene methyl glucoside or polyoxyalkylene polyglyceryl ether is preferable.
  • the weight average molecular weight of the polyoxyalkylene methyl glucoside is not particularly limited, but is, for example, 100 to 10,000.
  • the lower limit of the weight average molecular weight of the polyoxyalkylene glucoside is preferably 200, more preferably 500.
  • the upper limit of the weight average molecular weight of the polyoxyalkylene glucoside is preferably 5000, more preferably 1000.
  • the weight average molecular weight of the polyoxyalkylene polyglyceryl ether is not particularly limited, but is, for example, 100 to 10,000.
  • the lower limit of the weight average molecular weight of the polyoxyalkylene polyglyceryl ether is preferably 200, more preferably 300.
  • the upper limit of the weight average molecular weight of the polyoxyalkylene polyglyceryl ether is preferably 5000, and more preferably 3000.
  • the content of the multi-chain polyoxyalkylene alkyl ether (when multiple types are included, the total amount thereof; the same shall apply hereinafter) is not particularly limited, but for example 0.003 to 0.3 mass of the entire polishing composition %.
  • the lower limit of the content of the multi-chain polyoxyalkylene alkyl ether is preferably 0.005% by mass, and more preferably 0.015% by mass.
  • the upper limit of the content of the multi-chain polyoxyalkylene alkyl ether is preferably 0.25% by mass, more preferably 0.15% by mass.
  • the polishing composition according to the present embodiment may further contain a pH adjusting agent.
  • the pH of the polishing composition according to this embodiment is preferably 8.0 to 12.0.
  • polishing composition according to the present embodiment may optionally contain any compounding agent generally known in the field of polishing composition.
  • the polishing composition according to this embodiment is prepared by appropriately mixing silica particles, an inorganic alkali compound, polyglycerin, a multi-chain polyoxyalkylene alkyl ether and other compounding materials and adding water.
  • the polishing composition according to the present embodiment is produced by sequentially mixing silica particles, an inorganic alkali compound, polyglycerin, a multi-chain polyoxyalkylene alkyl ether, and other compounding materials in water.
  • means for mixing these components means commonly used in the technical field of polishing compositions such as a homogenizer and ultrasonic waves are used.
  • the polishing composition described above is used for polishing a silicon wafer after being diluted with water to an appropriate concentration.
  • the polishing composition according to the present embodiment can be particularly suitably used for finish polishing of a silicon wafer.
  • the polishing composition according to the present embodiment is suitable for polishing using a low-hardness urethane foam polishing pad.
  • a polishing composition according to the present embodiment and a low-hardness urethane foam polishing pad By using the polishing composition according to the present embodiment and a low-hardness urethane foam polishing pad, a polymer coating film having an appropriate film thickness is formed, and a balance between wafer protection and defect removal is achieved. Can keep. By making the scraping amount suitable for the film thickness, a balanced polishing action can be exhibited with low damage. In addition, by reducing the concentration of the silica particles, aggregation during polishing is suppressed and low defects can be achieved.
  • the hardness of the polishing pad is JIS-A standard hardness of 80 or less. When the hardness of the polishing pad exceeds 80, the contact area (contact area) between the wafer and the pad decreases, so that it becomes difficult to remove defects.
  • the upper limit of the hardness of the polishing pad is preferably 78, more preferably 75.
  • the lower limit of the hardness of the polishing pad is preferably 40, more preferably 50.
  • Polishing compositions of Examples 1 to 4 and Comparative Examples 1 to 12 shown in Table 1 were prepared.
  • particle diameter of “silica particles” represents the average secondary particle diameter of silica particles.
  • KOH represents potassium hydroxide
  • K 2 CO 3 represents potassium carbonate
  • NH 4 OH represents an aqueous ammonia solution.
  • PGL represents polyglycerin having a weight average molecular weight of 3000
  • HEC represents hydroxyethyl cellulose having a weight average molecular weight of 800,000.
  • polyoxyalkylene alkyl ether of the multi-chain type polyoxypropylene methyl glucoside having a weight average molecular weight of 775 was used. The balance of each polishing composition is water.
  • the polishing composition of Example 1 contained 3% by mass of colloidal silica, 0.045% by mass of potassium hydroxide, 0.45% by mass of polyglycerol, and 0.045% by mass of polyoxypropylene methylglucoside.
  • the polishing composition of Example 2 is based on the polishing composition of Example 1 and the content of polyoxypropylene methyl glucoside is 0.075% by mass.
  • the polishing composition of Example 3 contains 1.5% by mass of colloidal silica, 0.045% by mass of potassium hydroxide, 0.75% by mass of polyglycerol, and 0.060% by mass of polyoxypropylene methylglucoside. did.
  • the polishing composition of Example 4 is based on the polishing composition of Example 3 and contains potassium carbonate instead of potassium hydroxide.
  • the polishing composition of Comparative Example 1 is based on the polishing composition of Example 1 with no polyoxypropylene methyl glucoside added.
  • the polishing compositions of Comparative Examples 2 and 3 are based on the polishing composition of Comparative Example 1 and have a polyglycerin content of 0.30 mass% and 0.38 mass%, respectively.
  • the polishing compositions of Comparative Examples 4 and 5 are based on the polishing composition of Comparative Example 1 and the potassium hydroxide contents are 0.090 mass% and 0.135 mass%, respectively.
  • the polishing composition of Comparative Example 6 is obtained by changing the colloidal silica from a particle size of 65 nm to 70 nm based on the polishing composition of Comparative Example 1.
  • the polishing composition of Comparative Example 7 is obtained by changing the basic compound from potassium hydroxide to potassium carbonate based on the polishing composition of Comparative Example 1.
  • the polishing composition of Comparative Example 8 contained 10.5% by mass of colloidal silica, 0.390% by mass of aqueous ammonia, and 0.36% by mass of hydroxyethyl cellulose.
  • the polishing composition of Comparative Example 9 contained 2% by mass of colloidal silica, 0.078% by mass of an aqueous ammonia solution, and 0.34% by mass of hydroxyethyl cellulose.
  • the polishing composition of Comparative Example 10 contained 1% by mass of colloidal silica, 0.039% by mass of an aqueous ammonia solution, and 0.34% by mass of hydroxyethyl cellulose.
  • the polishing composition of Comparative Example 11 contained 0.2% by mass of colloidal silica, 0.009% by mass of an aqueous ammonia solution, and 0.34% by mass of hydroxyethyl cellulose.
  • the polishing composition of Comparative Example 12 was based on the polishing compositions of Examples 3 and 4, and contained an aqueous ammonia solution instead of an inorganic alkali compound (KOH, K 2 CO 3 ) as a basic compound. It is.
  • a 12-inch silicon wafer was polished.
  • the conductivity type of the silicon wafer was P type, and the resistivity was 0.1 ⁇ cm or more and less than 100 ⁇ cm.
  • the polished surface was a ⁇ 100> surface.
  • As the polishing apparatus an SPP800S single-side polishing apparatus manufactured by Okamoto Machine Tool Co., Ltd. was used.
  • As the polishing pad a urethane foam type polishing pad having a hardness of 73 was used.
  • the polishing composition was diluted 30 times and supplied at a supply rate of 0.6 L / min. Polishing was performed for 4 minutes with a platen rotating speed of 40 rpm, a carrier rotating speed of 39 rpm, and a polishing load of 100 gf / cm 2 .
  • the minute defects were measured using a wafer surface inspection apparatus MAGICS M5640 (Lasertec).
  • MAGICS M5640 Lasertec
  • a wafer surface inspection device LS6600 manufactured by Hitachi Engineering Co., Ltd. was used. The results are shown in Table 1 above.
  • Example 1 From the comparison between Example 1 and Comparative Example 1, it can be seen that the inclusion of a multi-chain polyoxyalkylene alkyl ether significantly reduces micro defects. Moreover, it turns out from a comparison with Example 3, 4 and the comparative example 12 that a micro defect reduces notably by using an inorganic alkali compound as a basic compound.
  • Example 1 the number of coarse particles of the polishing composition (the number of particles having a particle diameter of 0.5 ⁇ m or more) was measured.
  • the number of coarse particles AccuSize FX Nano Dual manufactured by Particle Sizing System was used. The results are shown in Table 2.
  • the inclusion of multi-chain polyoxyalkylene alkyl ether reduced the number of coarse particles by about 30%.
  • the decrease in the coarse particles is thought to be because the affinity between the particles and the dispersion medium is improved by the multi-chain polyoxyalkylene alkyl ether, and the particles are less likely to aggregate.
  • Polishing compositions of Examples 1, 3 to 16, and Comparative Examples 1, 12, and 13 shown in Table 3 were prepared.
  • the same formulation numbers were assigned the same examples and comparative examples (Examples 1, 3, and 4, Comparative Examples 1, 8, and 12).
  • NaOH sodium hydroxide
  • LiOH lithium hydroxide
  • K 4 P 2 O 7 potassium diphosphate
  • Na 2 CO 3 sodium carbonate
  • a 12-inch silicon wafer was polished using the polishing compositions of Examples and Comparative Examples described in Table 3. Polishing was performed under the same conditions as in Polishing Example 1 except that a suede type polishing pad (Supreme (registered trademark) RN-H manufactured by Nitta Haas Co., Ltd.) was used as the polishing pad. And haze was measured. Further, the number of coarse particles was measured in the same manner as in Polishing Example 1. The results are shown in Table 4.
  • the polishing of the silicon wafer is usually performed using a suede type polishing pad as in the polishing example 2.
  • the polishing composition of Comparative Example 8 Polishing Example 1 (Table 1) polished with a suede type polishing pad and Polishing Example 2 (Table) polished with a foamed urethane type pad.
  • the micro defects are reduced from 495 (Polishing Example 1) to 398 (Polishing Example 2). That is, in the conventional polishing composition, it is preferable to use a suede type polishing pad rather than a foamed urethane type pad.
  • the polishing example 1 has fewer micro defects. That is, in the polishing composition according to the present embodiment, the number of minute defects can be further reduced by polishing using a foamed urethane pad.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention fournit une composition pour polissage qui permet de réduire davantage les défauts microscopiques et le trouble d'une tranche après polissage. Cette composition pour polissage contient des particules de silice, un composé alcalin inorganique, une polyglycérine, et polyoxyalkylène alkyle éther à chaînes multiples. De préférence, le polyoxyalkylène alkyle éther à chaînes multiples consiste en au moins un élément choisi parmi un polyoxyalkylène méthyl glucoside, et un polyoxyalkylène polyglycéryléther. Le composé alcalin inorganique peut consister en au moins un élément choisi parmi un hydroxyde de métal alcalin, un sel de métal alcalin, un hydroxyde de métal alcalino-terreux et un sel de métal alcalino-terreux.
PCT/JP2017/047077 2016-12-28 2017-12-27 Composition pour polissage, et procédé de polissage WO2018124226A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018559608A JP7061968B2 (ja) 2016-12-28 2017-12-27 研磨用組成物及び研磨方法
CN201780074856.5A CN110023449B (zh) 2016-12-28 2017-12-27 研磨用组合物和研磨方法
KR1020197018210A KR102508181B1 (ko) 2016-12-28 2017-12-27 연마용 조성물 및 연마 방법

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JP2016-255136 2016-12-28
JP2016255136 2016-12-28

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WO2018124226A1 true WO2018124226A1 (fr) 2018-07-05

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JP (1) JP7061968B2 (fr)
KR (1) KR102508181B1 (fr)
CN (1) CN110023449B (fr)
TW (1) TWI753984B (fr)
WO (1) WO2018124226A1 (fr)

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JP2020107838A (ja) * 2018-12-28 2020-07-09 ニッタ・デュポン株式会社 半導体研磨用組成物
WO2021199723A1 (fr) * 2020-03-31 2021-10-07 株式会社フジミインコーポレーテッド Composition de polissage

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Publication number Priority date Publication date Assignee Title
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WO2021199723A1 (fr) * 2020-03-31 2021-10-07 株式会社フジミインコーポレーテッド Composition de polissage

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CN110023449A (zh) 2019-07-16
CN110023449B (zh) 2021-08-17
TWI753984B (zh) 2022-02-01
KR102508181B1 (ko) 2023-03-09
JPWO2018124226A1 (ja) 2019-10-31
KR20190098152A (ko) 2019-08-21
JP7061968B2 (ja) 2022-05-02
TW201831645A (zh) 2018-09-01

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