WO2018112997A1 - Goa电路结构 - Google Patents

Goa电路结构 Download PDF

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Publication number
WO2018112997A1
WO2018112997A1 PCT/CN2016/112257 CN2016112257W WO2018112997A1 WO 2018112997 A1 WO2018112997 A1 WO 2018112997A1 CN 2016112257 W CN2016112257 W CN 2016112257W WO 2018112997 A1 WO2018112997 A1 WO 2018112997A1
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Prior art keywords
goa circuit
flexible substrate
circuit structure
tft
layer
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Ceased
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PCT/CN2016/112257
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English (en)
French (fr)
Inventor
王刚
陈黎暄
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/503,707 priority Critical patent/US10359656B2/en
Publication of WO2018112997A1 publication Critical patent/WO2018112997A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3648—Control of matrices with row and column drivers using an active matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/42—Arrangements for providing conduction through an insulating substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • G09G2300/043—Compensation electrodes or other additional electrodes in matrix displays related to distortions or compensation signals, e.g. for modifying TFT threshold voltage in column driver

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a GOA circuit structure.
  • LCD Liquid crystal display
  • PDAs personal digital assistants
  • digital cameras computer screens or laptop screens, etc.
  • liquid crystal displays which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to fill liquid crystal molecules between a Thin Film Transistor Array Substrate (TFT Array Substrate) and a Color Filter (CF), and apply driving on the two substrates.
  • TFT Array Substrate Thin Film Transistor Array Substrate
  • CF Color Filter
  • AMLCD Active Matrix Liquid Crystal Display
  • AMLCD Active Matrix Liquid Crystal Display
  • TFT Thin Film Transistor
  • the gate of the TFT Connected to a scan line extending in a horizontal direction, a drain connected to a data line extending in a vertical direction, and a source connected to a corresponding pixel electrode. If a sufficient positive voltage is applied to a certain scanning line in the horizontal direction, all the TFTs connected to the scanning line are turned on, and the data signal voltage loaded on the data line is written into the pixel electrode to control different liquid crystals. The transparency then achieves the effect of controlling color.
  • TFT Thin Film Transistor
  • the driving of the horizontal scanning line of the active matrix liquid crystal display is initially completed by an external integrated circuit (IC), and the external IC can control the stepwise charging and discharging of the horizontal scanning lines of each level.
  • GOA technology Gate Driver on Array
  • the driving circuit of the horizontal scanning line can be fabricated on the substrate around the display area by using an array process of the liquid crystal display panel, so that it can replace the external IC to complete the horizontal scanning line.
  • Drive GOA technology can reduce the bonding process of external ICs, have the opportunity to increase production capacity and reduce product cost, and can make LCD panels more suitable for making narrow-frame display products.
  • the resolution of the display is also getting higher and higher.
  • the higher the resolution of the display the more GOA circuit stages need to be set, and the required wiring area is also required.
  • the implementation of the ultra-narrow bezel or no-border display of the display panel causes the GOA circuit to lose its advantage in producing a narrow-frame display product.
  • the object of the present invention is to provide a GOA circuit structure, which can reduce the wiring area occupied by the GOA circuit, shorten the edge non-display area width of the liquid crystal display, and realize borderless or ultra-narrow bezel display.
  • the present invention provides a GOA circuit structure including: a flexible substrate, a first TFT layer disposed on a front surface of the flexible substrate, a second TFT layer disposed on a back surface of the flexible substrate, and respectively disposed through The plurality of via holes of the flexible substrate are electrically connected to the plurality of traces of the first TFT layer and the second TFT layer, respectively.
  • the material of the flexible substrate is polyimide, polyethylene terephthalate, cyclic olefin copolymer, or polyether sulfone resin.
  • the flexible substrate has a thickness of 10 to 300 microns.
  • Each of the first TFT layer and the second TFT layer includes at least one TFT, and each of the TFTs includes a gate electrode disposed on the flexible substrate, a gate insulating layer covering the gate electrode, and a gate electrode disposed on the gate electrode. a semiconductor layer on the upper gate insulating layer and a source and a drain respectively provided on the gate insulating layer in contact with both ends of the semiconductor layer.
  • the vias are in one-to-one correspondence with the number of the traces, and each of the vias is provided with a trace.
  • Each via is provided with at least two traces, and each of the same via is separated by an insulating layer.
  • the second TFT layer and the trace provided on the back surface of the flexible substrate are further covered with a protective layer.
  • the material of the protective layer is silicon oxide.
  • the plurality of via holes are formed by a laser drilling process or a chemical etching process.
  • the material of the trace is copper or graphene.
  • the present invention also provides a GOA circuit structure, comprising: a flexible substrate, a first TFT layer disposed on a front surface of the flexible substrate, a second TFT layer disposed on a back surface of the flexible substrate, and respectively passing through the flexible substrate
  • the plurality of via holes are electrically connected to the plurality of traces of the first TFT layer and the second TFT layer respectively;
  • the material of the flexible substrate is polyimide, polyethylene terephthalate, cyclic olefin copolymer, or polyether sulfone resin;
  • the flexible substrate has a thickness of 10 to 300 micrometers.
  • the present invention provides a GOA circuit structure, the GOA circuit
  • the structure is fabricated on the front and back sides of the ultra-thin flexible substrate, and the TFTs in the GOA circuit on the back side are electrically connected together by using a trace passing through the via holes through a via hole in the flexible substrate. Therefore, the wiring area occupied by the GOA circuit is reduced, so that the substrate area of the same area can carry a circuit structure of nearly twice the area, the width of the edge non-display area is greatly reduced, and the borderless or ultra-narrow bezel display of the high resolution display panel is realized.
  • FIG. 1 is a front elevational view showing a first embodiment of a GOA circuit structure of the present invention
  • FIG. 2 is a schematic rear view of a first embodiment of a GOA circuit structure of the present invention
  • FIG 3 is a cross-sectional view showing a second embodiment of the GOA circuit structure of the present invention.
  • the present invention provides a GOA circuit structure, including: a flexible substrate 1, a first TFT layer 2 disposed on the front surface of the flexible substrate 1, and a second TFT disposed on the back surface of the flexible substrate 1.
  • the layer 3 and the plurality of vias 4 provided in the flexible substrate 1 are electrically connected to the plurality of traces 5 of the first TFT layer 2 and the second TFT layer 3, respectively.
  • the transmission line 5 for transmitting different signals can be respectively arranged in the same via 4 with a plurality of traces 5 separated by an insulating layer to transmit different signals, as shown in FIG. 1 and FIG. That is, the via 4 has a multi-layer metal structure, and as shown in FIG. 3, each via 4 corresponds to one trace 5, and the traces 5 for transmitting different signals are separately arranged, that is, each The via 4 has only one metal structure.
  • a typical 4T structure GOA circuit includes: a first TFT T1, a second TFT T2, a third TFT T3, and a fourth TFT T4, wherein the first TFT T1 and the second TFT T2 are located on the front side of the flexible substrate 1. Forming the first TFT layer 2, the third TFT T3 and the fourth TFT T4 are located A second TFT layer 3 is formed on the back surface of the flexible substrate 1.
  • the flexible substrate 1 is provided with a via 4, and the via 4 is provided with two traces 5, and one trace 5 passes through the via 4
  • the drains of the first TFT T1 and the source of the fourth TFT T4 are connected together, and the other trace 5 also passes through the via 4 to source the drain of the second TFT T2 and the source of the third TFT T3.
  • the gates of the fourth and fourth TFTs T4 are connected together, and the two traces 5 are separated by an insulating layer (not shown).
  • FIG. 3 is a technical solution for separately providing a trace 5 for transmitting different signals corresponding to each of the vias 5 according to the second embodiment of the present invention.
  • the second embodiment illustrates the present embodiment.
  • a preferred TFT structure includes: a gate electrode 21 disposed on the flexible substrate 1, a gate insulating layer 22 covering the gate electrode 21, and a gate insulating layer 22 disposed on the gate electrode 21.
  • the upper semiconductor layer 23 and the source 24 and the drain 25 respectively provided on the gate insulating layer 22 in contact with both ends of the semiconductor layer 23, at this time, as shown in FIG.
  • the traces 5 of the gates 21 of the two TFTs on the front and back sides of the substrate 1 and the traces 5 connecting the drains 25 of the two TFTs on the front and back sides of the flexible substrate 1 are respectively located in different vias 4.
  • TFT structure illustrated in the second embodiment can also be applied to the first embodiment.
  • TFT of other structures can also be used, which does not affect the present invention. achieve.
  • the material of the flexible substrate 1 is an ultra-thin flexible material such as polyimide, polyethylene terephthalate, cycloolefin copolymer, or polyether sulfone resin, and the thickness of the flexible substrate 1 It is 10 to 300 microns. Since the present invention employs a double-sided circuit structure, in order to connect the circuits on both sides of the flexible substrate 1 at this time, the number of via holes 4 on the flexible substrate 1 is set according to the number of traces 5 passing through one via 4 and the actual design. There may be many, so the present invention selects the flexible substrate 1 which is greatly reduced in thickness compared with the prior art, so that the through hole 4 which meets the requirements can be ensured in the flexible substrate 1 to ensure the feasibility of the process.
  • the present invention selects the flexible substrate 1 which is greatly reduced in thickness compared with the prior art, so that the through hole 4 which meets the requirements can be ensured in the flexible substrate 1 to ensure the feasibility of the process.
  • the plurality of via holes 4 may be formed by a laser drilling process or a chemical etching process.
  • the material of the trace 5 may be selected from copper, graphene, or other common metals and semiconductors having electrical conductivity.
  • the second TFT layer 3 and the traces 5 disposed on the back surface of the flexible substrate 1 are further covered with a protective layer, and the material of the protective layer may be selected from silicon oxide. (SiOx), or other oxides.
  • the present invention provides a GOA circuit structure fabricated on the front and back sides of an ultra-thin flexible substrate, and by using a via hole in the flexible substrate, using a trace that traverses the via hole
  • the front side GOA circuit and the TFT in the back GOA circuit are electrically connected together, thereby reducing the wiring area occupied by the GOA circuit, so that the substrate area of the same area can carry a circuit structure of nearly twice the area, and the edge non-display area is greatly reduced.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

公开了一种GOA电路结构，该GOA电路结构制作于超薄的柔性基板的正面与背面，并通过在柔性基板上开设过孔（4），利用穿越该过孔（4）的走线（5）将正面的GOA电路与背面的GOA电路中的TFT电性连接到一起，从而减少GOA电路占用的布线面积，使得相同面积的基板区域可以承载近乎两倍面积的电路结构，大幅降低边缘非显示区的宽度，实现高分辫率显示面板的无边框或超窄边框显示。

Description

GOA电路结构 技术领域
本发明涉及显示技术领域，尤其涉及一种GOA电路结构。
背景技术
液晶显示器(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等，在平板显示领域中占主导地位。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)与彩色滤光片基板(Color Filter，CF)之间灌入液晶分子，并在两片基板上施加驱动电压来控制液晶分子的旋转方向，以将背光模组的光线折射出来产生画面。
主动矩阵式液晶显示器(Active Matrix Liquid Crystal Display，AMLCD)是目前最常用的液晶显示器，包含多个像素，每个像素各受一个薄膜晶体管(Thin Film Transistor，TFT)的控制，该TFT的栅极连接至沿水平方向延伸的扫描线，漏极连接至沿垂直方向延伸的数据线，源极连接至对应的像素电极。如果在水平方向的某一扫描线上施加足够的正电压，则会使得连接在该条扫描线上的所有TFT打开，将数据线上所加载的数据信号电压写入像素电极中，控制不同液晶的透光度进而达到控制色彩的效果。
主动矩阵式液晶显示器水平扫描线的驱动(即栅极驱动)最初由外接的集成电路(Integrated Circuit，IC)来完成，外接的IC可以控制各级水平扫描线的逐级充电和放电。GOA技术(Gate Driver on Array)即阵列基板行驱动技术，可以运用液晶显示面板的阵列制程将水平扫描线的驱动电路制作在显示区周围的基板上，使之能替代外接IC来完成水平扫描线的驱动。GOA技术能减少外接IC的焊接(bonding)工序，有机会提升产能并降低产品成本，而且可以使液晶显示面板更适合制作窄边框的显示产品。
随着显示技术的不断发展，显示器的分辨率也越来越高，对于相同尺寸的显示器，显示器的分辨率越高，需要设置的GOA电路级数也就越多，需要的占用的布线面积也越大，显示面板边框宽度也不断增大，不利于显 示面板的超窄边框或无边框显示的实现，导致GOA电路失去了在制作窄边框的显示产品上的优势。
发明内容
本发明的目的在于提供一种GOA电路结构，能够减少GOA电路占用的布线面积，缩短液晶显示器的边缘非显示区宽度，实现无边框或超窄边框显示。
为实现上述目的，本发明提供一种GOA电路结构，包括：柔性基板、设于所述柔性基板正面的第一TFT层、设于所述柔性基板背面的第二TFT层、以及分别穿过设于柔性基板的多个过孔分别电性连接所述第一TFT层与所述第二TFT层的多条走线。
所述柔性基板的材料为聚酰亚胺、聚对苯二甲酸乙二醇酯、环烯烃共聚物、或者聚醚砜树脂。
所述柔性基板的厚度为10至300微米。
所述第一TFT层与第二TFT层均包括至少一个TFT，每一个TFT均包括设于所述柔性基板上的栅极、覆盖所述栅极的栅极绝缘层、设于所述栅极上的栅极绝缘层上的半导体层、以及设于栅极绝缘层上的分别与所述半导体层的两端相接触的源极与漏极。
所述过孔与所述走线的数量一一对应，每一个过孔中设有一条走线。
每一个过孔设有至少两条走线，同一个过孔中的各条走线通过绝缘层分隔。
所述第二TFT层以及设于所述柔性基板背面的走线上还覆盖有保护层。
所述保护层的材料为氧化硅。
述多个过孔通过激光打孔工艺、或化学腐蚀工艺制作。
所述走线的材料为铜、或石墨烯。
本发明还提供一种GOA电路结构，包括：柔性基板、设于所述柔性基板正面的第一TFT层、设于所述柔性基板背面的第二TFT层、以及分别穿过设于柔性基板的多个过孔分别电性连接所述第一TFT层与所述第二TFT层的多条走线；
其中，所述柔性基板的材料为聚酰亚胺、聚对苯二甲酸乙二醇酯、环烯烃共聚物、或者聚醚砜树脂；
其中，所述柔性基板的厚度为10至300微米。
本发明的有益效果：本发明提供了一种GOA电路结构，该GOA电路 结构制作于超薄的柔性基板的正面与背面，并通过在柔性基板上开设过孔，利用穿越所述过孔的走线将正面的GOA电路与背面的GOA电路中的TFT电性连接到一起，从而减少GOA电路占用的布线面积，使得相同面积的基板区域可以承载近乎两倍面积的电路结构，大幅降低边缘非显示区的宽度，实现高分辨率显示面板的无边框或超窄边框显示。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的GOA电路结构的第一实施例正面示意图；
图2为本发明的GOA电路结构的第一实施例背面示意图；
图3为本发明的GOA电路结构的第二实施例的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1至图3，本发明提供一种GOA电路结构，包括：柔性基板1、设于所述柔性基板1正面的第一TFT层2、设于所述柔性基板1背面的第二TFT层3、以及分别穿过设于柔性基板1的多个过孔4分别电性连接所述第一TFT层2与所述第二TFT层3的多条走线5。
需要说明的是，由于TFT的连接，往往需要多个信号的输入，也就是说所述第一TFT层2与第二TFT层3之间的连接往往需要多条走线5，用于传输不同的信号，此时该传输不同的信号的走线5既可以像图1和图2所示的那样，在同一个过孔4中设置多条由绝缘层隔开的走线5分别传输不同信号，也即过孔4中具有多层金属结构，也可以如图3所示的那样，将每一个过孔4对应一条走线5，将传输不同信号的走线5分开设置，也即每一个过孔4中仅具有一层金属结构。
具体地，请参阅图1及图2，其为本发明的第一实施例采用在同一个过孔4中设置多条由绝缘层隔开的走线5分别传输不同信号的技术方案，其为一个典型的4T结构GOA电路，其包括：第一TFT T1、第二TFT T2、第三TFT T3、以及第四TFT T4，其中第一TFT T1和第二TFT T2位于所述柔性基板1的正面形成第一TFT层2，第三TFT T3及第四TFT T4位于 所述柔性基板1的背面形成第二TFT层3，所述柔性基板1上设有一过孔4，所述过孔4中设有两条走线5，其中一条走线5穿越该过孔4将所述第一TFT T1的漏极以及第四TFT T4的源极连接到一起，另一条走线5也穿越该过孔4将所述第二TFT T2的漏极以及第三TFT T3的源极和第四TFT T4的栅极连接到一起，该两条走线5通过绝缘层隔开(未图示)。
具体地，请参阅图3，其为本发明的第二实施例采用每一个过孔4对应一条走线5传输不同信号的走线5分开设置的技术方案，所述第二实施例示意了本发明优选的一种TFT结构，包括：设于所述柔性基板1上的栅极21、覆盖所述栅极21的栅极绝缘层22、设于所述栅极21上的栅极绝缘层22上的半导体层23、以及设于栅极绝缘层22上的分别与所述半导体层23的两端相接触的源极24与漏极25，此时，如图3所示，连接所述柔性基板1正面与背面的两个TFT的栅极21的走线5和连接所述柔性基板1正面与背面的两个TFT的漏极25的走线5分别位于不同的过孔4中。
可以理解的是，所述第二实施例中示意出的TFT结构同样可以应用于第一实施例中，当然根据设计需要本发明的还可以采用其他结构的TFT，这并不会影响本发明的实现。
进一步地，所述柔性基板1的材料为聚酰亚胺、聚对苯二甲酸乙二醇酯、环烯烃共聚物、或者聚醚砜树脂等超薄的柔性材料，所述柔性基板1的厚度为10至300微米。由于本发明采用双面电路结构，此时为了连接柔性基板1两面的电路，根据通过一个过孔4的走线5的数目与实际设计的情况，设置的柔性基板1上的过孔4的数目可能较多，因此本发明选用了相比于现有技术普遍采用的玻璃基板厚度大幅减小的柔性基板1，从而能够保证在柔性基板1制作出符合要求的过孔4，保证制程的可行性，以及通过过孔4的走线5的导通性。所述多个过孔4的制作可以选用激光打孔工艺、或化学腐蚀工艺等。所述走线5的材料可选择铜、石墨烯，或者其他具有导电性的常用金属和半导体。
此外，为了对柔性基板1背面的电路结构进行保护，所述第二TFT层3以及设于所述柔性基板1背面的走线5上还覆盖有保护层，该保护层的材料可选择氧化硅(SiOx)、或其他氧化物。
综上所述，本发明提供了一种GOA电路结构，该GOA电路结构制作于超薄的柔性基板的正面与背面，并通过在柔性基板上开设过孔，利用穿越所述过孔的走线将正面的GOA电路与背面的GOA电路中的TFT电性连接到一起，从而减少GOA电路占用的布线面积，使得相同面积的基板区域可以承载近乎两倍面积的电路结构，大幅降低边缘非显示区的宽度，实现 高分辨率显示面板的无边框或超窄边框显示
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (18)

  1. 一种GOA电路结构，包括：柔性基板、设于所述柔性基板正面的第一TFT层、设于所述柔性基板背面的第二TFT层、以及分别穿过设于柔性基板的多个过孔分别电性连接所述第一TFT层与所述第二TFT层的多条走线。
  2. 如权利要求1所述的GOA电路结构，其中，所述柔性基板的材料为聚酰亚胺、聚对苯二甲酸乙二醇酯、环烯烃共聚物、或者聚醚砜树脂。
  3. 如权利要求1所述的GOA电路结构，其中，所述柔性基板的厚度为10至300微米。
  4. 如权利要求1所述的GOA电路结构，其中，所述第一TFT层与第二TFT层均包括至少一个TFT，每一个TFT均包括设于所述柔性基板上的栅极、覆盖所述栅极的栅极绝缘层、设于所述栅极上的栅极绝缘层上的半导体层、以及设于栅极绝缘层上的分别与所述半导体层的两端相接触的源极与漏极。
  5. 如权利要求1所述的GOA电路结构，其中，所述过孔与所述走线的数量一一对应，每一个过孔中设有一条走线。
  6. 如权利要求1所述的GOA电路结构，其中，每一个过孔设有至少两条走线，同一个过孔中的各条走线通过绝缘层分隔。
  7. 如权利要求1所述的GOA电路结构，其中，所述第二TFT层以及设于所述柔性基板背面的走线上还覆盖有保护层。
  8. 如权利要求7所述的GOA电路结构，其中，所述保护层的材料为氧化硅。
  9. 如权利要求1所述的GOA电路结构，其中，所述多个过孔通过激光打孔工艺、或化学腐蚀工艺制作。
  10. 如权利要求1所述的GOA电路结构，其中，所述走线的材料为铜、或石墨烯。
  11. 一种GOA电路结构，包括：柔性基板、设于所述柔性基板正面的第一TFT层、设于所述柔性基板背面的第二TFT层、以及分别穿过设于柔性基板的多个过孔分别电性连接所述第一TFT层与所述第二TFT层的多条走线；
    其中，所述柔性基板的材料为聚酰亚胺、聚对苯二甲酸乙二醇酯、环烯烃共聚物、或者聚醚砜树脂；
    其中，所述柔性基板的厚度为10至300微米。
  12. 如权利要求11所述的GOA电路结构，其中，所述第一TFT层与第二TFT层均包括至少一个TFT，每一个TFT均包括设于所述柔性基板上的栅极、覆盖所述栅极的栅极绝缘层、设于所述栅极上的栅极绝缘层上的半导体层、以及设于栅极绝缘层上的分别与所述半导体层的两端相接触的源极与漏极。
  13. 如权利要求11所述的GOA电路结构，其中，所述过孔与所述走线的数量一一对应，每一个过孔中设有一条走线。
  14. 如权利要求11所述的GOA电路结构，其中，每一个过孔设有至少两条走线，同一个过孔中的各条走线通过绝缘层分隔。
  15. 如权利要求11所述的GOA电路结构，其中，所述第二TFT层以及设于所述柔性基板背面的走线上还覆盖有保护层。
  16. 如权利要求15所述的GOA电路结构，其中，所述保护层的材料为氧化硅。
  17. 如权利要求11所述的GOA电路结构，其中，所述多个过孔通过激光打孔工艺、或化学腐蚀工艺制作。
  18. 如权利要求11所述的GOA电路结构，其中，所述走线的材料为铜、或石墨烯。
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