WO2018051719A1 - Appareil onduleur et compresseur électrique de véhicule équipé de celui-ci - Google Patents

Appareil onduleur et compresseur électrique de véhicule équipé de celui-ci Download PDF

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Publication number
WO2018051719A1
WO2018051719A1 PCT/JP2017/029582 JP2017029582W WO2018051719A1 WO 2018051719 A1 WO2018051719 A1 WO 2018051719A1 JP 2017029582 W JP2017029582 W JP 2017029582W WO 2018051719 A1 WO2018051719 A1 WO 2018051719A1
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Prior art keywords
power semiconductor
loss
semiconductor element
junction temperature
calculation unit
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PCT/JP2017/029582
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English (en)
Japanese (ja)
Inventor
順貴 川田
大輔 廣野
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サンデン・オートモーティブコンポーネント株式会社
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Priority to DE112017004631.9T priority Critical patent/DE112017004631T5/de
Priority to CN201780055588.2A priority patent/CN109831931A/zh
Publication of WO2018051719A1 publication Critical patent/WO2018051719A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H02M1/327—Means for protecting converters other than automatic disconnection against abnormal temperatures
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H02M7/53875—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current with analogue control of three-phase output
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/539—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency
    • H02M7/5395—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters with automatic control of output wave form or frequency by pulse-width modulation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
    • H02P29/60—Controlling or determining the temperature of the motor or of the drive
    • H02P29/68—Controlling or determining the temperature of the motor or of the drive based on the temperature of a drive component or a semiconductor component

Definitions

  • the present invention relates to an inverter device that operates a motor of an electric compressor, for example, and a vehicle electric compressor including the same.
  • an electric compressor is used as a refrigerant compressor.
  • This electric compressor drives a compression element by a motor fed from a vehicle battery, and this motor is operated by an inverter device.
  • This type of inverter device controls the energization of each phase of the motor by switching a power semiconductor element (IGBT, MOSFET, etc.) having a bridge configuration.
  • IGBT power semiconductor element
  • MOSFET MOSFET
  • This junction temperature is the temperature of the chip inside the power semiconductor element (surface temperature of the IGBT chip, MOSFET chip, and FWD chip), and the temperature of the substrate on which the power semiconductor element is mounted (near the power semiconductor element).
  • the temperature rise value corresponding to the amount of heat generated by the loss consisting of the switching loss and steady loss (conduction loss or conduction loss) of the power semiconductor element is detected by the temperature sensor (temperature detector). It is obtained by adding (for example, refer patent document 1).
  • FIG. 5 is a diagram for explaining a conventional protection method based on the junction temperature.
  • the vertical axis indicates the phase current value of the inverter circuit composed of power semiconductor elements in a bridge configuration
  • the horizontal axis detects the temperature of the substrate on which the power semiconductor elements are mounted (the temperature in the vicinity of the power semiconductor elements).
  • the detected value of the temperature sensor The broken line shown in FIG. 5 indicates that the current is cut off when the phase current reaches the predetermined value Asstop until the detection value of the temperature sensor rises to T1, and the detection value of the temperature sensor rises from T1 to T2.
  • the protection threshold value for performing the blocking with a value smaller than the predetermined value Asstop (the oblique line in the broken line in FIG.
  • this protection threshold value is as follows. That is, assuming that the voltage (HV voltage) applied from the vehicle battery (HV power supply for the vehicle) is a maximum value (for example, 300 V), the applied voltage (HV voltage) is based on the characteristics of the power semiconductor element. ) And the phase current value, the loss (heat generation amount) of the power semiconductor element is calculated, and the temperature rise value is calculated in advance from this loss (the relationship between the phase current and the temperature rise value is determined by the maximum applied voltage). It is obtained in advance as a value).
  • the protection threshold value (broken line) in FIG. 5 is shown. Conventionally, based on the protection threshold value shown in FIG. 5, for example, until the detected value of the temperature sensor at that time reaches T1, the power semiconductor element that cuts off the current when the phase current value rises to Asstop. Had done protection.
  • this protection threshold is the maximum value of the applied voltage (HV voltage), that is, the worst-case protection threshold, when the applied voltage (HV voltage) is low, the current is applied at a stage where it is not necessary to perform protection. There was a drawback of blocking.
  • the phase current is assumed to be a sine wave, and the loss is calculated from an average value of a relatively long period.
  • the applied voltage is modulated, the waveform of the phase current is not an ideal sine wave, but includes ripples and harmonic components. For this reason, even if the average value is not known, there is an instantaneous situation where the temperature limit of the power semiconductor element is exceeded. In the past, this could not be accurately determined and protected.
  • the present invention has been made to solve the conventional technical problems, and an inverter device capable of protecting a power semiconductor element with high accuracy from an instantaneous temperature rise and a vehicle using the same An object is to provide an electric compressor.
  • An inverter device of the present invention includes an inverter circuit having a power semiconductor element having a bridge configuration and an inverter control unit having a PWM control unit for driving the power semiconductor element, and is provided in the vicinity of the power semiconductor element.
  • a temperature detector for detecting the temperature and a phase current detector for detecting the phase current of the inverter circuit are provided.
  • the inverter control unit is a power semiconductor element based on at least one phase current detected by the phase current detector and the applied voltage. Add the temperature rise value obtained from the loss of the power semiconductor element calculated by the loss calculation section to the temperature detected by the loss detector and the temperature detector that calculates the loss of the power, and calculate the junction temperature of the power semiconductor element.
  • a junction temperature estimation calculation unit for estimation, and for each PWM carrier period in the PWM control unit, the loss calculation unit of the power semiconductor element The junction temperature of the power semiconductor element is estimated by the junction temperature estimation calculation unit, and the junction temperature of the power semiconductor element for each PWM carrier period estimated by the junction temperature estimation calculation unit exceeds a predetermined value. In this case, a predetermined protection operation is performed.
  • the inverter device according to a second aspect of the invention is characterized in that, in the above invention, the PWM carrier cycle is sufficiently smaller than the frequency of the phase current of the inverter circuit and sufficiently shorter than the thermal time constant of the power semiconductor element.
  • the loss calculation unit calculates the loss of the power semiconductor element from the switching loss and the steady loss of the power semiconductor element, and the junction temperature estimation calculation unit calculates the loss.
  • the temperature rise value is calculated by multiplying the loss of the power semiconductor element calculated by the unit by the thermal resistance value of the power semiconductor element.
  • the loss calculation unit calculates the loss of the power semiconductor element of each phase of the bridge configuration from the phase current and applied voltage of each phase of the inverter circuit, and performs inverter control. The unit performs a protection operation based on a junction temperature of the highest power semiconductor element.
  • an inverter device according to any of the above-mentioned inventions, wherein the power semiconductor element is a composite of a semiconductor switching element and a free wheel diode, and the loss calculation unit calculates the loss of the semiconductor switching element and the free wheel diode
  • the junction temperature estimation calculation unit estimates the junction temperature of the semiconductor switching element and the junction temperature of the free-wheeling diode.
  • the inverter control unit limits the current flowing through the inverter circuit when the junction temperature of the power semiconductor element exceeds the first predetermined value, and the junction temperature is When the second predetermined value higher than the first predetermined value is exceeded, the current flowing through the inverter circuit is cut off.
  • a vehicle electric compressor including a motor that is operated by the inverter device according to each of the above inventions, and is mounted on the vehicle.
  • an inverter device including an inverter circuit having a power semiconductor element having a bridge configuration and an inverter control unit having a PWM control unit for driving the power semiconductor element
  • the temperature in the vicinity of the power semiconductor element is increased.
  • a temperature detector to detect and a phase current detector to detect the phase current of the inverter circuit, and the inverter control unit detects the power semiconductor element from at least one phase current detected by the phase current detector and the applied voltage. Add the temperature rise value obtained from the loss of the power semiconductor element calculated by the loss calculation section to the temperature detected by the loss detector and the temperature detector that calculates the loss of the power, and calculate the junction temperature of the power semiconductor element.
  • the power semiconductor element can be protected with high accuracy even from a temperature rise.
  • the loss calculation section calculates the loss of the power semiconductor element from the switching loss and the steady loss of the power semiconductor element as in the invention of claim 3, and the junction temperature estimation calculation section calculates the loss calculation section. If the temperature rise value is calculated by multiplying the loss of the power semiconductor element by the thermal resistance value of the power semiconductor element, the instantaneous value of the junction temperature of the power semiconductor element is accurately calculated and estimated. Will be able to.
  • the loss calculation unit calculates the loss of the power semiconductor element of each phase of the bridge configuration from the phase current and applied voltage of each phase of the inverter circuit, and the inverter control unit calculates the highest power.
  • the protection operation is executed based on the junction temperature of the semiconductor element for power, the power semiconductor element in the phase where the temperature rises most rapidly can be safely and accurately protected.
  • the loss calculation unit calculates the loss of the semiconductor switching element and the free-wheeling diode, If the temperature estimation calculation unit estimates the junction temperature of the semiconductor switching element and the junction temperature of the free-wheeling diode, the temperature estimation calculation unit can protect the power semiconductor element having the free-wheeling diode without any trouble.
  • the inverter control unit limits the current flowing through the inverter circuit when the junction temperature of the power semiconductor element exceeds the first predetermined value, and the junction temperature is less than the first predetermined value.
  • the high second predetermined value is exceeded, by interrupting the current flowing through the inverter circuit, it is possible to avoid unnecessary current interruption while reliably protecting the power semiconductor element. It becomes.
  • a very effective overheat protection can be implement
  • FIG. 2 It is a schematic sectional drawing of the electric compressor for vehicles of one Example to which the inverter apparatus of this invention is applied. It is an electric circuit diagram of the inverter apparatus of one Example of this invention. It is a figure which shows the switching control of the inverter apparatus of FIG. 2, the loss of a semiconductor switching element and a free-wheeling diode, and the estimated value of junction temperature. It is a figure which shows the flow of estimation calculation of the junction temperature which the inverter control part of FIG. 2 performs. It is a figure explaining the conventional protection system by junction temperature.
  • FIG. 1 shows a schematic sectional view of a vehicular electric compressor 1 to which the present invention is applied.
  • the electric compressor 1 according to the embodiment constitutes a part of a refrigerant circuit of an air conditioner that air-conditions the interior of a vehicle (not shown), and is mounted in an engine room of the vehicle.
  • the electric compressor 1 includes a motor 3 in a housing 2 and a scroll-type compression element 6 driven by a rotating shaft 4 of the motor 3.
  • An inverter device 7 of the present invention is further attached to the housing 2, and the motor 3 is operated by the inverter device 7 to drive the compression element 6.
  • FIG. 2 shows an electric circuit diagram of the inverter device 7.
  • the inverter device 7 includes a control board 11 on which an inverter circuit 8 and a smoothing capacitor 9 are mounted, and an inverter control unit 12 configured by a microcomputer (processor).
  • the positive DC bus 13 of the inverter circuit 8 is connected to the + terminal of a vehicle battery (HV power supply for vehicle) B (not shown), and the negative DC bus 14 is connected to the negative terminal of the battery B.
  • the smoothing capacitor 9 is connected between the two DC buses 13 and 14 of the inverter circuit 8.
  • the inverter circuit 8 changes the switching state of the plurality of power semiconductor elements constituting the bridge, converts the direct current applied from the battery B into alternating current, and supplies the alternating current to the motor 3. Specifically, three power semiconductor elements 16U, 16V, and 16W constituting the upper phase of the bridge and three power semiconductor elements 17U, 17V, and 17W constituting the lower phase of the bridge are provided. Each of the power semiconductor elements 16U, 16V, 16W and 17U, 17V, 17W is a composite of a semiconductor switching element 18 and a freewheeling diode 19 connected in reverse parallel thereto. DC power is supplied from the battery B to the buses 13 and 14.
  • the upper-phase power semiconductor elements 16 U, 16 V, and 16 W and the lower-phase power semiconductor elements 17 U, 17 V, and 17 W are one-to-one. Correspondingly, they are connected in series.
  • the pair of semiconductor switching elements 18 of the power semiconductor elements 16U to 17W connected in series is referred to as a switching leg.
  • the switching leg 21U configured by a pair of the semiconductor switching element 18 of the power semiconductor element 16U and the semiconductor switching element 18 of the power semiconductor element 17U, the semiconductor switching element 18 of the power semiconductor element 16V, and the power A switching leg 21V configured by a pair of semiconductor switching elements 18 of the semiconductor element 17V, a switching leg 21W configured by a pair of the semiconductor switching elements 18 of the power semiconductor element 16W and the semiconductor switching elements 18 of the power semiconductor element 17W, There is.
  • the switching legs 21U, 21V, and 21W are connected between the positive DC bus 13 and the negative DC bus 14, respectively.
  • the intermediate points MU, MV, MW of the respective switching legs 21U, 21V, 21W are nodes for outputting the phase voltages Vu, Vv, Vw of each phase (U phase, V phase, W phase) of the output AC.
  • Each intermediate point MU, MV, MW is connected to each phase of the motor 3.
  • the semiconductor switching element 18 uses an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor switching element 18 is not limited to the IGBT and may be a MOSFET or the like.
  • a temperature sensor 22 as a temperature detector is mounted on the control board 11 in the vicinity of the power semiconductor elements 16U to 17W. In this embodiment, the temperature sensor 22 is a thermistor.
  • a shunt resistor 23 as a phase current detector is connected to the negative DC bus 14 at a position where current from the motor 3 flows.
  • the phase current detector is not limited to the shunt resistor, and may be configured with a current transformer or the like.
  • the inverter control unit 12 includes a motor control unit 26, a PWM control unit 27, a current detection unit 28, a gate driver 29, a loss calculation unit 31, a junction temperature estimation calculation unit 32, and a temperature protection unit 33. I have.
  • the HV voltage (applied voltage) of the DC bus 13 on the positive side is input to the PWM control unit 27 and the loss calculation unit 31.
  • the motor control unit 26 outputs a target waveform (modulated wave) of the three-phase sine wave applied to the motor 3 to the PWM control unit 27.
  • the PWM control unit 27 generates a duty (Duty: upper phase ON time) that is a drive signal by comparing the level of the modulated wave output from the motor control unit 26 with the level of the carrier (triangular wave). This duty is generated for each of the U-phase, V-phase, and W-phase, and is sent to the gate driver 29 that drives (ON-OFF) the gate of each semiconductor switching element 18.
  • the frequencies of the phase currents Iu, Iv, Iw, which are the rotation speeds of the motor 3 of the embodiment, are 400 Hz to 500 Hz, and the carrier cycle (hereinafter referred to as PWM carrier cycle) in the PWM control unit 27 is higher than that. It is 20 kHz which is sufficiently small (or short enough).
  • the thermal time constant of the power semiconductor elements 16U to 17W (the time taken to transmit the loss temperature rise value to the temperature sensor 22) is about 50 msec, and the PWM carrier cycle is sufficiently shorter than this thermal time constant. (Or fast enough).
  • the current detector 28 receives the voltage across the shunt resistor 23 and calculates the phase currents Iu, Iv, Iw from the resistance value of the shunt resistor 23.
  • the calculated phase currents Iu, Iv, Iw are input to the loss calculator 31.
  • the loss calculation unit 31 includes the phase currents Iu, Iv, Iw of the U-phase, V-phase, and W-phase input from the current detection unit 28 and the HV voltage (applied voltage) of the DC bus 13 on the positive side. Based on the duty input from the PWM control unit 27, the loss of each of the power semiconductor elements 16U to 17W is calculated.
  • the loss calculation unit 31 includes the switching loss of the semiconductor switching element 18 constituting each of the power semiconductor elements 16U to 17W, the steady loss (conduction loss or conduction loss), the switching loss of the freewheeling diode 19, and The steady loss (conduction loss or conduction loss) is calculated separately.
  • the switching loss and steady loss (conduction loss or conduction loss) of the semiconductor switching element 18 are the loss of the semiconductor switching element 18 and the amount of heat generated by the semiconductor switching element 18. Further, the switching loss and steady loss (conduction loss or conduction loss) of the freewheeling diode 19 are the losses of the freewheeling diode 19 and the amount of heat generated by the freewheeling diode 19. These are losses of the power semiconductor elements 16U to 17W.
  • the loss of each power semiconductor element 16U to 17W calculated by the loss calculation unit 31 is input to the junction temperature estimation calculation unit 32.
  • the junction temperature estimation calculation unit 32 increases the temperature obtained from the loss of each power semiconductor element 16U to 17W calculated by the loss calculation unit 31 to the temperature Tth in the vicinity of the power semiconductor elements 16U to 17W detected by the temperature sensor 22. By adding the value ⁇ T, the estimated values of the junction temperature Tji of the semiconductor switching element 18 of each power semiconductor element 16U to 17W and the junction temperature Tjd of the freewheeling diode 19 are calculated. In this case, the junction temperature estimation calculation unit 32 multiplies the loss of each power semiconductor element 16U to 17W calculated by the loss calculation unit 31 by the thermal resistance value (heat transfer coefficient) Tr of the power semiconductor elements 16U to 17W (multiplication). ) To calculate the temperature rise value ⁇ T.
  • the estimation calculation in the junction temperature estimation calculation unit 32 is expressed by the following equation (1).
  • Tji, Tjd Tth + ⁇ T (1)
  • ⁇ T loss ⁇ Tr o The calculated junction temperatures Tji and Tjd are input to the temperature protection unit 33.
  • the temperature protection unit 33 performs a predetermined protection operation based on the junction temperature Tji of the semiconductor switching element 18 of each power semiconductor element 16U to 17W and the junction temperature Tjd of the free wheel diode 19 estimated by the junction temperature estimation calculation unit 32. Execute. This protection operation is divided into two stages in the embodiment. First, the highest one of the junction temperatures Tji, Tjd of any one of the power semiconductor elements 16U to 17W exceeds the first predetermined value TS1.
  • the temperature protection unit 33 outputs a current limit signal to the motor control unit 26.
  • the motor control unit 26 adjusts the modulation wave so as to limit the current flowing through the inverter circuit 8 to a predetermined value.
  • the temperature protection unit 33 sends a current interruption signal to the motor control unit 26 when the highest one of the junction temperatures Tji, Tjd exceeds a second predetermined value TS2 higher than the first predetermined value TS1. Output.
  • the motor control unit 26 When the motor control unit 26 receives the current cut-off signal from the temperature protection unit 33, the motor control unit 26 stops the output of the modulated wave, thereby turning off the semiconductor switching elements 18 of all the power semiconductor elements 16 U to 17 W and causing the inverter circuit 8 to Cut off the flowing current.
  • the first predetermined value TS1 and the second predetermined value TS2 are values set from the temperature limits of the semiconductor switching element 18 and the free wheeling diode 19 constituting the power semiconductor elements 16U to 17W.
  • the U-phase, V-phase, and W-phase duties output from the PWM control unit 27 are shown.
  • the phase current waveform shown below the U-phase phase current Iu The fine broken line is the waveform of the V-phase phase current Iv, and the rough broken line is the waveform of the W-phase phase current Iw.
  • the IGBT loss shown below is the loss of the semiconductor switching element 18 calculated by the loss calculation unit 31.
  • the solid line is the loss of the U-phase power semiconductor element 16U, the semiconductor switching element 18 of the 17U, and the fine broken line is the V-phase.
  • the loss of the semiconductor switching element 18 of the power semiconductor elements 16V and 17V and the rough broken line are the loss of the semiconductor switching element 18 of the W-phase power semiconductor elements 16W and 17W.
  • the diode loss shown below is the loss of the freewheeling diode 19 calculated by the loss calculating unit 31.
  • the solid line is the loss of the U-phase power semiconductor element 16U, the freewheeling diode 19 of 17U, and the fine broken line is the V-phase power.
  • the loss of the free-wheeling diode 19 of the semiconductor elements 16V and 17V and the rough broken line are the loss of the free-wheeling diode 19 of the W-phase power semiconductor elements 16W and 17W.
  • the temperature sensor temperature below it is a temperature Tth in the vicinity of the power semiconductor elements 16U to 17W detected by the temperature sensor 22.
  • the estimated IGBT junction temperature shown below is the junction temperature Tji of the semiconductor switching element 18 calculated by the junction temperature estimation calculation unit 32.
  • the solid line shows the semiconductor switching elements of the U-phase power semiconductor elements 16U and 17U. 18 is a junction temperature Tji, a fine broken line is the junction temperature Tji of the V-phase power semiconductor element 16V and 17V, and a rough broken line is the junction temperature of the W-phase power semiconductor element 16W and 17W of the semiconductor switching element 18. Tji.
  • a dashed-dotted line is an average value of junction temperature Tji.
  • the estimated diode junction temperature shown below is the junction temperature Tjd of the freewheeling diode 19 calculated by the junction temperature estimation calculating unit 32.
  • the solid line is the junction temperature of the freewheeling diode 19 of the U-phase power semiconductor elements 16U and 17U.
  • Tjd the fine broken line is the junction temperature Tjd of the V-phase power semiconductor elements 16V and 17V
  • the rough broken line is the junction temperature Tjd of the W-phase power semiconductor elements 16W and 17W.
  • a dashed-dotted line is the average value of junction temperature Tjd.
  • FIG. 4 shows the flow of estimation calculation of the junction temperature executed by the inverter control unit 12.
  • the inverter control unit 12 calculates the amount of heat generated by the semiconductor switching element 18 (IGBT) and the freewheeling diode 19 (Diode) for each PWM carrier period. That is, the loss calculation unit 31 calculates each phase (for each PWM carrier cycle obtained from the duty output from the PWM control unit 27 from the HV voltage (applied voltage) during driving and the instantaneous values of the phase currents Iu, Iv, and Iw. The losses of the power semiconductor elements 16U to 17W of the U-phase, V-phase, and W-phase upper and lower phases are calculated (step S1).
  • the loss calculating unit 31 calculates the loss of the semiconductor switching element 18 from the phase current and HV voltage (applied voltage) flowing when the upper phase semiconductor switching element 18 is ON based on the duty of each phase.
  • Switching loss and steady loss are calculated, and for the lower-phase semiconductor switching element 18, the semiconductor switching is performed from the phase current and HV voltage (applied voltage) that flow when the upper-phase semiconductor switching element 18 is OFF.
  • the loss (switching loss and steady loss) of the element 18 is calculated.
  • the loss (switching loss and steady loss) of the upper and lower phase freewheeling diodes 19 the phase current and the HV voltage (applied to the freewheeling diode 19 when the semiconductor switching element 18 which is a composite with the loss is switched off.
  • the loss (switching loss and steady loss) of the freewheeling diode 19 is calculated from the voltage). For example, taking the U phase in FIG.
  • Steady loss the loss of the freewheeling diode 19 that is a composite with it is zero
  • the loss of the freewheeling diode 19 of the lower-phase power semiconductor element 17U is calculated (and The loss of the semiconductor switching element 18 as a composite is zero).
  • the loss calculation unit 31 takes in a phase current (instantaneous value) in a half cycle of the PWM carrier cycle, performs loss calculation in the remaining half cycle, and outputs the loss calculation to the junction temperature estimation calculation unit 32.
  • each loss in FIG. 3 and the junction temperature are delayed by one cycle from the phase current.
  • the junction temperature estimation calculation unit 32 is calculated by the loss calculation unit 31 for each PWM carrier cycle, and the output power loss of the semiconductor switching elements 18 of the power semiconductor elements 16U to 17W and the loss of the freewheeling diode 19 are heated.
  • a temperature rise value ⁇ T caused by each loss is calculated (step S2).
  • the junction temperature estimation calculation unit 32 takes in the temperature Tth in the vicinity of the power semiconductor elements 16U to 17W detected by the temperature sensor 22 (step S3), and at this temperature Tth, the semiconductor switching element 18 and the free wheel diode 19 By adding the temperature increase value ⁇ T calculated from the loss (Equation 1), the estimated values of the junction temperature Tji of the semiconductor switching element 18 and the junction temperature Tjd of the free-wheeling diode 19 of each of the power semiconductor elements 16U to 17W are calculated ( Step S4). Since each junction temperature Tji, Tjd is calculated for every PWM carrier period, those estimated values are instantaneous values.
  • the calculated junction temperatures Tji and Tjd of the power semiconductor elements 16U to 17W are output to the temperature protection unit 33, and the temperature protection unit 33, as described above, outputs the semiconductor switching elements of the power semiconductor elements 16U to 17W.
  • the highest one of the junction temperature Tji of 18 and the junction temperature Tjd of the reflux diode 19 is extracted.
  • the temperature protection unit 33 outputs a current limiting signal to the motor control unit 26, and further, the second predetermined value TS1.
  • a current interruption signal is output to the motor control unit 26.
  • the motor control unit 26 limits or cuts off the current flowing through the inverter circuit 8 to a predetermined value based on the current limit signal or the current cut-off signal from the temperature protection unit 33.
  • the inverter control unit 12 calculates the loss of the power semiconductor elements 16U to 17W from the phase currents Iu, Iv, Iw detected by the shunt resistor 23 and the HV voltage (applied voltage).
  • the temperature increase value ⁇ T obtained from the loss of the power semiconductor elements 16U to 17W calculated by the loss calculation unit 31 is added to the temperature Tth detected by the calculation unit 31 and the temperature sensor 22, and the power semiconductor elements 16U to 17W
  • the calculation unit 32 estimates the junction temperature of the power semiconductor elements 16U to 17W. Since the carrier period is sufficiently smaller than the frequency of the phase current of the inverter circuit 8 and sufficiently shorter than the thermal time constant of the power semiconductor elements 16U to 17W, the power semiconductor element 16U has a high-speed period such as every PWM carrier period.
  • the instantaneous value of the junction temperature of ⁇ 17W can be estimated.
  • the junction temperature (instantaneous value) of the power semiconductor elements 16U to 17W for each PWM carrier period estimated by the junction temperature estimation calculation unit 32 exceeds a predetermined value (first predetermined value, second predetermined value).
  • a predetermined value first predetermined value, second predetermined value.
  • the loss calculating unit 31 calculates the loss of the power semiconductor elements 16U to 17W from the switching loss and the steady loss of the power semiconductor elements 16U to 17W, and the junction temperature estimation calculating unit 32 is calculated by the loss calculating unit 31.
  • the temperature rise value ⁇ T is calculated by multiplying the loss of the power semiconductor elements 16U to 17W by the thermal resistance value Tr of the power semiconductor elements, the instantaneous value of the junction temperature of the power semiconductor elements 16U to 17W is accurately calculated. And can be estimated.
  • the loss calculation unit 31 uses the phase currents Iu, Iv, Iw of each phase (U phase, V phase, W phase) and the HV voltage (applied voltage) of the inverter circuit 8 to power semiconductor elements 16U for each phase in a bridge configuration.
  • the temperature protection unit 33 performs a protection operation based on the junction temperature of the highest power semiconductor element 16U to 17W, so that the power semiconductor element 16U to 17W of the phase where the temperature rises most rapidly is calculated.
  • the loss calculation unit 31 calculates the loss of the semiconductor switching element 18 and the loss of the free wheel diode 19. Since the junction temperature estimation calculation unit 32 estimates the junction temperature Tji of the semiconductor switching element 18 and the junction temperature Tjd of the freewheeling diode 19, in the case of the power semiconductor elements 16U to 17W having the freewheeling diode 18, Can be protected without any problem. Further, when the junction temperature of the power semiconductor elements 16U to 17W exceeds the first predetermined value, the temperature protection unit 33 limits the current flowing through the inverter circuit 8, and the second temperature is higher than the first predetermined value.
  • the current flowing through the inverter circuit 8 is cut off when the predetermined value is exceeded, it is possible to avoid unnecessary current interruption while reliably protecting the power semiconductor elements 16U to 17W. It becomes.
  • the electric compressor 1 for vehicles like the Example used in a high temperature environment by operating the motor 3 by the inverter apparatus 7 of this invention, it can implement
  • the junction temperatures of the power semiconductor elements 16U to 17W of the U phase, V phase, and W phase are estimated and protected.
  • the invention other than claim 4 is not limited thereto. You may make it protect by estimating the junction temperature of the power semiconductor element only for any one phase or only two phases.
  • the power semiconductor elements 16U to 17W made of the composite of the semiconductor switching element 18 (IGBT, MOSFET) and the freewheeling diode 19 have been described as examples, but the invention other than claim 5 is not limited thereto, The present invention is also effective for an inverter circuit having only a semiconductor switching element (IGBT, MOSFET) having no freewheeling diode. Furthermore, in the embodiments, the present invention has been described with an inverter device that drives a motor of an electric compressor mounted on a vehicle. However, the invention is not limited to the invention other than claim 7, and an inverter circuit having a power semiconductor element in a bridge configuration. The present invention is effective for all inverter devices using the.

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  • Power Engineering (AREA)
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Abstract

L'invention concerne un appareil onduleur qui est capable de protéger des éléments semi-conducteurs de puissance avec une précision élevée même contre une augmentation de température instantanée. Une unité de commande d'onduleur 12 calcule les pertes d'éléments semi-conducteurs de puissance 16U à 17W par une unité de calcul de perte 31 pour chaque période de porteuse de modulation d'impulsions en largeur dans une unité de commande de modulation d'impulsions en largeur 27, et estime une température de jonction des éléments semi-conducteurs de puissance par une unité de calcul d'estimation de température de jonction 32. Une unité de protection de température 33 exécute une opération de protection prescrite lorsque la température de jonction des éléments semi-conducteurs de puissance estimée par l'unité de calcul d'estimation de température de jonction pour chaque période de porteuse de modulation d'impulsions en largeur dépasse une valeur prescrite.
PCT/JP2017/029582 2016-09-14 2017-08-10 Appareil onduleur et compresseur électrique de véhicule équipé de celui-ci WO2018051719A1 (fr)

Priority Applications (2)

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DE112017004631.9T DE112017004631T5 (de) 2016-09-14 2017-08-10 Wechselrichterapparatur und elektrischer Fahrzeugkompressor, der mit derselben versehen ist
CN201780055588.2A CN109831931A (zh) 2016-09-14 2017-08-10 逆变器装置及具备该逆变器装置的车辆用电动压缩机

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JP2016-179386 2016-09-14
JP2016179386A JP2018046647A (ja) 2016-09-14 2016-09-14 インバータ装置及びそれを備えた車両用電動圧縮機

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CN113320431A (zh) * 2021-07-07 2021-08-31 西安星源博睿新能源技术有限公司 电动车辆充电模块温度保护点动态调整方法、装置及系统

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JP7472663B2 (ja) 2020-06-05 2024-04-23 富士電機株式会社 電力変換装置
JP7385538B2 (ja) 2020-07-31 2023-11-22 株式会社安川電機 電力変換装置、温度推定方法及びプログラム
WO2022045098A1 (fr) * 2020-08-25 2022-03-03 サンデン・オートモーティブコンポーネント株式会社 Dispositif d'onduleur et compresseur électrique de véhicule équipé de celui-ci

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CN109194105B (zh) * 2018-08-24 2020-04-14 珠海格力电器股份有限公司 变流器控制方法、装置、系统及变流器
CN113320431A (zh) * 2021-07-07 2021-08-31 西安星源博睿新能源技术有限公司 电动车辆充电模块温度保护点动态调整方法、装置及系统

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