WO2017215549A1 - 一种有机电致发光化合物及其应用 - Google Patents
一种有机电致发光化合物及其应用 Download PDFInfo
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- WO2017215549A1 WO2017215549A1 PCT/CN2017/087892 CN2017087892W WO2017215549A1 WO 2017215549 A1 WO2017215549 A1 WO 2017215549A1 CN 2017087892 W CN2017087892 W CN 2017087892W WO 2017215549 A1 WO2017215549 A1 WO 2017215549A1
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Classifications
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- C07C211/43—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
- C07C211/57—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton
- C07C211/61—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings being part of condensed ring systems of the carbon skeleton with at least one of the condensed ring systems formed by three or more rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
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Definitions
- the present invention relates to the field of semiconductor technology, and in particular to the synthesis of a fluorescent compound and the use as a light-emitting layer material on an organic light emitting diode.
- OLED Organic Light Emission Diodes
- OLED display technology has been applied in the fields of smart phones, tablet computers, etc., and will further expand to large-size applications such as television.
- the luminous efficiency and service life of the OLED device need to be further improved.
- the OLED light-emitting device is like a sandwich structure, including an electrode material film layer and an organic functional material sandwiched between different electrode film layers, and various functional materials are superposed on each other according to the purpose to form an OLED light-emitting device.
- As a current device when a voltage is applied to the electrodes of both ends of the OLED light-emitting device, and positive and negative charges are applied to the organic layer functional material film layer by the electric field, the positive and negative charges are further recombined in the light-emitting layer, that is, OLED electroluminescence is generated.
- Research on improving the performance of OLED light-emitting devices includes: reducing the driving voltage of the device, improving the luminous efficiency of the device, and improving the service life of the device.
- it is not only necessary to innovate from the structure and fabrication process of OLED devices, but also to continuously research and innovate OLED photoelectric functional materials, and to create functional materials with higher performance OLEDs.
- the OLED photoelectric functional materials applied to the OLED device can be divided into two categories, namely, a charge injection transmission material and a luminescent material, and further, the charge injection transmission material can be further divided into an electron injection transmission material and a hole injection transmission material.
- the luminescent material can also be divided into a host luminescent material and a dopant material.
- various organic functional materials are required to have good photoelectric characteristics. For example, as a charge transport material, it is required to have good carrier mobility, high glass transition temperature, etc., as a material of the light-emitting layer. The material is required to have good fluorescence quantum efficiency, material evaporation stability, appropriate HOMO/LUMO energy level, and the like.
- the OLED photoelectric functional material film layer constituting the OLED device includes at least two layers or more, and the industrially applied OLED device structure includes a hole injection layer, a hole transport layer, a light emitting layer, an electron injection layer and the like, and also That is to say, the photoelectric functional material applied to the OLED device includes at least a hole injecting material, a hole transporting material, a luminescent material, an electron injecting material, etc., and the material type and the collocation form are rich and diverse.
- the optoelectronic functional materials used have strong selectivity, and the performance of the same materials in different structural devices may be completely different.
- the Applicant has provided an organic electroluminescent compound and its use.
- the OLED device prepared by using the compound of the present invention as a host material or a doping material of the light-emitting layer has good external quantum efficiency, material stability and color purity, and can meet the requirements of panel manufacturers.
- R 1 and R 2 are each independently represented by a triarylamine group or a nitrogen-containing polyheterocyclic heterocyclic aromatic group; and R 1 and R 2 are the same or different;
- R 3 - R 10 are each independently represented by hydrogen, an alkyl group having 1 to 6 carbon atoms, a heteroalkyl group, a substituted or unsubstituted aryl group, a heteroaryl group, and the adjacent two groups may be bonded.
- An aryl ring or a heteroaryl ring having 4 to 6 carbon atoms is formed, and at least one hydrogen present on the formed ring may be substituted with an alkyl group, an aryl group or a heteroaryl group.
- R 1 and R 2 can be represented by the general formula (2):
- R 3 and R 4 each independently represent a substituted or unsubstituted phenyl group, a pyridyl group, a diphenyl group, a terphenyl group, a fluorenyl group, a phenanthryl group, a triazinyl group, a pyrimidinyl group, and a quinamic group.
- oxazolyl oxazolyl
- benzoxazolyl dibenzothiophenyl, acridinyl, anthracene
- R 3 , R 4 cannot be naphthyl or trimethoxyphenyl, and cannot be phenyl at the same time; R 3 and R 4 are the same Or different.
- R 1 and R 2 can be represented by the general formula (3):
- X 1 is an oxygen atom, a sulfur atom, a selenium atom, a C 1-10 linear or branched alkyl-substituted alkylene group, an aryl-substituted alkylene group, an alkyl group or an aryl group.
- One of the amine groups is an oxygen atom, a sulfur atom, a selenium atom, a C 1-10 linear or branched alkyl-substituted alkylene group, an aryl-substituted alkylene group, an alkyl group or an aryl group.
- R 1 and R 2 can be represented by the formula (4) or the formula (5):
- R 1 and R 2 are independently selected from hydrogen or a structure represented by the formula (6):
- a is X 2 and X 3 are each an oxygen atom, a sulfur atom, a selenium atom, a C 1-10 linear or branched alkyl substituted alkylene group, an aryl substituted alkylene group, an alkyl group or an aryl substituted amine group.
- R 3 to R 10 are each independently represented as:
- the specific structure of the organic electroluminescent compound is:
- the compound described above is characterized in that the compound is applied as an emissive layer host material or a doping material to an organic electroluminescent diode.
- the Applicant provides an organic electroluminescent device containing the organic electroluminescent compound, which is applied as an emissive layer host material or a doping material to an organic electroluminescent diode.
- the compound of the invention can be applied to the fabrication of OLED light-emitting devices, and good device performance can be obtained.
- the compound is used as a separate light-emitting layer material of an OLED light-emitting device or a light-emitting layer doping material, the luminous efficiency and power of the device can be obtained. Both efficiency and external quantum efficiency are greatly improved; device color purity is significantly improved, and device lifetime is improved.
- the compound of the invention has good application effects in OLED light-emitting devices and has good industrialization prospects.
- the present invention has a structure in which a CC bond on a dibenzoheptene is bonded to a ruthenium as a core, and the compound is modified by a different substituent on the amine group, and the molecule of the structure has a strong spatial stereoscopic effect and can It effectively reduces the aggregation effect between molecules and inhibits the degree of crystallization of materials.
- This kind of material is used in organic light-emitting diodes, which can effectively improve device efficiency and lifetime.
- Figure 1 is a schematic illustration of an OLED device made from a compound of the present invention.
- 1, is a transparent substrate layer
- 2 is an ITO anode layer
- 3 is a hole injection layer
- 4 is a hole transport layer
- 5 is a light-emitting layer
- 6. is an electron transport layer
- 7 is an electron.
- the injection layer, 8, is a cathode reflective electrode layer.
- Elemental analysis structure (Molecular Formula C 59 H 52 N 2 ): Theory C, 89.81; H, 6.64; N, 3.55;
- Elemental analysis structure (Molecular formula C 69 H 52 N 2 O 2 ): Theory C, 88.05; H, 5.57; N, 2.98; O, 3.40;
- Elemental analysis structure (molecular formula C65H50N4): theoretical value C, 88; H, 5.68; N, 6.32;
- Elemental analysis structure (Molecular Formula C 73 H 60 N 2 ): Theory C, 90.83; H, 6.27; N, 2.90;
- Elemental analysis structure (Molecular formula C 81 H 62 N 4 O 2 ): Theory C, 86.6; H, 5.56; N, 4.99; O, 2.85;
- Elemental analysis structure (molecular formula C 69 H 52 N 2 S 2 ): Theory C, 85.15; H, 5.39; N, 2.88; S, 6.59;
- Elemental analysis structure (Molecular Formula C 75 H 52 N 2 ): Theory C, 91.43; H, 5.73; N, 2.84;
- Elemental analysis structure (molecular formula C 81 H 60 N 2 O 2 ): Theory C, 88.98; H, 5.53; N, 2.56; O, 2.93;
- Elemental analysis structure (Molecular Formula C 77 H 68 N 2 ): Theory C, 90.55; H, 6.71; N, 2.74;
- Elemental analysis structure (Molecular Formula C 59 H 52 N 2 ): Theory C, 89.81; H, 6.64; N, 3.55;
- Elemental analysis structure (Molecular Formula C 59 H 52 N 2 ): Theory C, 89.81; H, 6.64; N, 3.55;
- Elemental analysis structure (Molecular Formula C 59 H 52 N 2 ): Theory C, 89.81; H, 6.64; N, 3.55;
- Elemental analysis structure (Molecular formula C 69 H 52 N 2 O 2 ): Theory C, 88.05; H, 5.57; N, 2.98; O, 3.40;
- Elemental analysis structure (Molecular Formula C 75 H 48 N 2 O 2 ): Theory C, 89.26; H, 4.79; N, 2.78; O, 3.17;
- Elemental analysis structure (molecular formula C 65 H 50 N 4 ): theoretical C, 88; H, 5.68; N, 6.32;
- Elemental analysis structure (Molecular Formula C 57 H 44 N 2 ): Theory C, 90.44; H, 5.68; N, 3.70;
- Elemental analysis structure (Molecular Formula C 63 H 36 N 2 O 2 ): Theory C, 88.71; H, 4.25; N, 3.25; O, 3.75;
- Elemental analysis structure (molecular formula C 63 H 36 N 2 O 4 ): Theory C, 85.50; H, 4.10; N, 3.17; O, 7.23;
- Elemental analysis structure (Molecular Formula C 81 H 58 N 4 ): Theory C, 89.47; H, 5.38; N, 5.15;
- Elemental analysis structure (molecular formula C 75 H 60 N 2 O 2 ): Theory C, 88.20; H, 5.92; N, 2.74; O, 3.13;
- Elemental analysis structure (molecular formula C 63 H 60 N 2 ): Theory C, 89.53; H, 7.16; N, 3.31;
- Elemental analysis structure (molecular formula C 73 H 54 N 2 O 2 ): theoretical value C, 88.45; H, 5.49; N, 2.83; O, 3.23
- Elemental analysis structure (molecular formula C 71 H 52 N 4 O 2 ): theoretical value C, 85.86; H, 5.28; N, 5.64; O, 3.32
- Elemental analysis structure (molecular formula C 55 H 40 N 2 S 2 ): theoretical value C, 83.30; H, 5.08; N, 3.53; S, 8.09
- Example 25 Comparative Examples 1 to 24
- the comparative examples 1 to 24 of the present invention have the same manufacturing process, and the same substrate material and electrode material are used, and the film thickness of the electrode material is also uniform, and the difference is Some adjustments were made to some of the materials used in the device to compare the performance of devices made using the compounds described herein.
- Table 1 The structures of the devices obtained in Comparative Examples 1 to 24 and Example 25 are shown in Table 1; the performance test results of the obtained devices are shown in Table 2.
- the transparent substrate layer 1 is made of a transparent material such as glass.
- the transparent ITO anode layer 2 (having a film thickness of 150 nm) was washed, that is, washed with alkali, washed with pure water, dried, and then subjected to ultraviolet-ozone washing to remove organic residues on the surface of the transparent ITO.
- HAT-CN was deposited by a vacuum vapor deposition apparatus to a film thickness of 10 nm, and this organic material was used as the hole injection layer 3.
- TCTA 4,4',4"-tris(carbazol-9-yl)triphenylamine
- the light emitting layer 5 of the OLED light emitting device is formed, and the structure thereof includes the material CBP [4,4'-bis(9-carbazole)biphenyl] used as the host material of the OLED light emitting layer 5 as a host material.
- CBP 4,4'-bis(9-carbazole)biphenyl
- MQAB has a doping ratio of 5% by weight
- the light-emitting layer 5 has a film thickness of 25 nm.
- the vacuum evaporation electron-transporting layer material was continued to be Alq 3 (8-hydroxyquinoline aluminum).
- the vacuum evaporation film thickness of this material was 30 nm, and this layer was the electron transport layer 6.
- a lithium fluoride (LiF) layer having a film thickness of 1 nm was formed by a vacuum evaporation apparatus, and this layer was an electron injection layer 7.
- an aluminum (Al) layer having a film thickness of 80 nm was formed by a vacuum deposition apparatus, and this layer was used as the cathode reflective electrode layer 8.
- the material structure of each layer is as follows:
- the anode and the cathode are connected by a known driving circuit, and the luminous efficiency, luminescent color, external quantum efficiency, and device lifetime of the device (LT90: luminance is attenuated to 90% of the initial luminance) are measured.
- LT90 luminance is attenuated to 90% of the initial luminance
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 1.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 2.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 3.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 4.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 5.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 6.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 7.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 8.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 9.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 10.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 11.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 2.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 13.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 14.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 15.
- This comparative example is different from Example 21 in that the CBP in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 16.
- This comparative example is different from Example 21 in that the CBP in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 17.
- This comparative example is different from Example 21 in that the CBP in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 18.
- This comparative example is different from Example 21 in that the CBP in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 19.
- This comparative example is different from Example 21 in that the CBP in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 20.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 21.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 22.
- This comparative example is different from Example 21 in that the MQAB in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 23.
- This comparative example is different from Example 21 in that the CBP in the light-emitting layer 5 of the OLED light-emitting device was changed to the material prepared in Example 24.
- Example 25 1.0 Light blue 1.0 1.0 Comparative example 1 2.5 blue 1.8 2.0 Comparative example 2 2.6 blue 1.9 2.0 Comparative example 3 2.8 Sky blue 2.3 2.6 Comparative example 4 2.4 Dark blue 1.8 1.9 Comparative Example 5 3.0 Blue green 2.6 3.2 Comparative Example 6 2.4 Sky blue 2.1 1.9 Comparative Example 7 3.1 Blue green 2.8 3.5 Comparative Example 8 2.75 blue 2.15 2.45 Comparative Example 9 2.6 blue 1.8 2.5 Comparative Example 10 2.45 Dark blue 1.85 2.1 Comparative Example 11 2.85 blue 2.15 2.50 Comparative Example 12 3.05 Sky blue 2.70 2.80 Comparative Example 13 2.95 Sky blue 2.65 3.0 Comparative Example 14 2.40 blue 2.0 2.55 Comparative Example 15 2.45 Dark blue 2.40 2.05 Comparative Example 16 1.54 blue 1.51 1.88 Comparative Example 17 1.60 blue 1.40 2.01 Comparative Example 18 1.72 blue 1.41 1.85 Comparative Example 19 1.65 blue 1.50 1.72 Comparative Example 20 1.50 blue 1.35 1.79 Comparative Example 21 2.41 Sky blue 2.35 2.51 Comparative Example 22 2.50 blue 2.
- the above data are all implemented as 25 standard devices.
- the device obtained in Example 25 has a luminous efficiency of 3.6 cd/A at an emission luminance of 1000 cd/m 2 and an external quantum efficiency of 3.0%.
- the driving lifetime (light emission luminance is 90% of initial brightness) is 30 hours
- the compounds of the present invention are applicable to OLED light-emitting device fabrication, and good device performance can be obtained.
- the luminous efficiency and external quantum efficiency of the device are greatly improved; at the same time, the device lifetime is greatly improved.
- the compound of the invention has good application effects in OLED light-emitting devices and has good industrialization prospects.
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Abstract
本发明公开了一种有机电致发光化合物及其应用,该化合物的结构式如通式(1)所示。该种材料具有良好的荧光量子效率和电致发光效率,易形成非晶型薄膜,具有良好的热稳定性,因此该类材料可做为有机电致发光器件中发光层主体或掺杂材料使用。
Description
本发明涉及半导体技术领域,尤其是涉及一种荧光化合物的合成,以及作为发光层材料在有机发光二极管上的应用。
有机电致发光(OLED:Organic Light Emission Diodes)器件技术既可以用来制造新型显示产品,也可以用于制作新型照明产品,有望替代现有的液晶显示和荧光灯照明,应用前景十分广泛。
当前,OLED显示技术已经在智能手机,平板电脑等领域获得应用,进一步还将向电视等大尺寸应用领域扩展。但是,和实际的产品应用要求相比,OLED器件的发光效率,使用寿命等性能还需要进一步提升。
OLED发光器件犹如三明治的结构,包括电极材料膜层,以及夹在不同电极膜层之间的有机功能材料,各种不同功能材料根据用途相互叠加在一起共同组成OLED发光器件。作为电流器件,当对OLED发光器件的两端电极施加电压,并通过电场作用有机层功能材料膜层中正负电荷,正负电荷进一步在发光层中复合,即产生OLED电致发光。
对于OLED发光器件提高性能的研究包括:降低器件的驱动电压,提高器件的发光效率,提高器件的使用寿命等。为了实现OLED器件的性能的不断提升,不但需要从OLED器件结构和制作工艺的创新,更需要OLED光电功能材料不断研究和创新,创制出更高性能OLED的功能材料。
应用于OLED器件的OLED光电功能材料从用途上可划分为两大类,即电荷注入传输材料和发光材料,进一步,还可将电荷注入传输材料分为电子注入传输材料和空穴注入传输材料,还可以将发光材料分为主体发光材料和掺杂材料。为了制作高性能的OLED发光器件,要求各种有机功能材料具备良好的光电特性,譬如,作为电荷传输材料,要求具有良好的载流子迁移率,高玻璃化转化温度等,作为发光层的材料要求材料具有良好的荧光量子效率、材料蒸镀稳定性、适当的HOMO/LUMO能阶等。
构成OLED器件的OLED光电功能材料膜层至少包括两层以上结构,产业上应用的OLED器件结构,则包括空穴注入层、空穴传输层、发光层、电子注入层等多种膜层,也就是说应用于OLED器件的光电功能材料至少包含空穴注入材料,空穴传输材料,发光材料,电子注入材料等,材料类型和搭配形式具有丰富性和多样性的特点。另外,对于不同结构的OLED器件搭配而言,所使用的光电功能材料具有较强的选择性,相同的材料在不同结构器件中的性能表现,也可能完全迥异。
目前,荧光材料研究方面已经取得了长足的发展,能够满足产业化的需求;但是其效率、寿命方面依然存在不足,不易达到全彩RGB的要求。因而,具有高效率、长寿命的荧光材料的研究和开发一直是产业化的热点。
因此,针对当前OLED显示照明产业的实际需求而言,荧光材料的发展还远远不够,落后于面板制造企业的要求,作为材料企业开发更高性能的有机功能荧光材料显得尤为重要。
发明内容
针对现有技术存在的上述问题,本申请人提供了一种有机电致发光化合物及其应用。本发明化合物作为发光层主体材料或者掺杂材料制作出的OLED器件具有良好的外量子效率、材料稳定性以及色纯度,能够满足面板制造企业的要求。
本发明的技术方案如下:
一种有机电致发光化合物,其特征在于所述化合物的结构如通式(1)所示:
通式(1)中,R1、R2分别独立地表示为三芳香胺基团或者含氮的多元杂环芳香基团;R1、R2相同或者不同;
R3-R10分别独立地表示为氢、碳原子数为1-6的烷基、杂烷基、取代或者未
取代的芳基、杂芳基,且相邻的两个基团可以键结形成碳原子数为4-6的芳基环或者杂芳基环,且形成的环上至少存在一个氢可以被烷基、芳基、杂芳基取代。
优选的,所述通式(1)中R1、R2均可采用通式(2)表示:
通式(2)中,R3、R4分别独立地表示取代或未取代的苯基、吡啶基、二联苯基、三联苯基、蒽基、菲基、三嗪基、嘧啶基、喹啉基、二苯并呋喃基、9,9-二甲基芴基、9,9-二苯基芴基、咔唑基、苯并咔唑基、二苯并噻吩基、丫啶基、吲哚并咔唑基、吩噁嗪基、噻噁嗪基中的一种;且R3、R4不能为萘基、三甲氧基苯基,且不能同时为苯基;R3、R4相同或者不同。
优选的,所述通式(1)中R1、R2均可采用通式(3)表示:
通式(3)中,X1为氧原子、硫原子、硒原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的胺基中的一种。
优选的,所述通式(1)中R1、R2均可采用通式(4)或通式(5)表示:
其中,R1、R2分别独立的选取氢或通式(6)所示结构:
a为X2、X3分别为氧原子、硫原子、硒原子、C1-10直链或支链烷基取代的亚烷基、芳基取代的亚烷基、烷基或芳基取代的胺基中的一种;a与CL1-CL2键、CL2-CL3键、CL3-CL4键、CL4-CL5键、CL‘1-CL’2键、CL‘2-CL’
3键、CL‘3-CL’4键或CL‘4-CL’5键连接。
优选的,所述通式(1)中R3-R10分别独立地表示为:
优选的,所述有机电致发光化合物具体结构为:
上面所述化合物,其特征在于所述化合物作为发光层主体材料或者掺杂材料应用于有机电致发光二极管。
本申请人提供了一种含有所述有机电致发光化合物的有机电致发光器件,所述化合物作为发光层主体材料或者掺杂材料应用于有机电致发光二极管。
本发明有益的技术效果在于:
本发明所述化合物可应用于OLED发光器件制作,并且可以获得良好的器件表现,所述化合物作为OLED发光器件的独立的发光层材料、或者发光层掺杂材料使用时,器件的发光效率,功率效率和外量子效率均得到很大改善;器件色纯度得到明显改善,器件寿命得到提升。本发明所述化合物在OLED发光器件中具有良好的应用效果,具有良好的产业化前景。
本发明以二苯并庚烯上的C-C键与芴连接所形成的结构为核心,并且通过胺基上不同的取代基对化合物进行修饰,该类结构的分子具有较强的空间立体作用,能够有效降低分子间的聚集效应,抑制材料的结晶程度,该类材料运用于有机发光二极管中,可以有效提高器件效率和寿命。
图1为本发明化合物制成的OLED器件的示意图。
图中:1、为透明基板层,2、为ITO阳极层,3、为空穴注入层,4、为空穴传输层,5、为发光层,6、为电子传输层,7、为电子注入层,8、为阴极反射电极层。
为了更加清楚的了解本发明的技术手段和实用目的,通过列举实施例和比较例,同时辅以图片加以说明。
实施例1(化合物01)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,4.62克(0.025M)
双(3,4-二甲基苯基)胺,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流12小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.88克白色固体,纯度(HPLC)为99.0%,收率74.6%。
元素分析结构(分子式C59H52N2):理论值C,89.81;H,6.64;N,3.55;
测试值:C,89.60;H,6.70;N,5.70。
实施例2(化合物03)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,7.53克(0.025M)中间体a,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到6.59克白色固体,纯度(HPLC)为98.4%,收率70.0%。
元素分析结构(分子式C69H52N2O2):理论值C,88.05;H,5.57;N,2.98;O,3.40;
测试值:C,87.9;H,5.70;N,3.05;O,3.35。
实施例3(化合物06)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,6.85克(0.025M)中间体b,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流16小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到6.07克白色固体,纯度(HPLC)为98.8%,收率68.5%。
元素分析结构(分子式C65H50N4):理论值C,88;H,5.68;N,6.32;
测试值:C,87.8;H,5.90;N,6.30。
实施例4(化合物07)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,7.84克(0.025M)中间体c,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流18小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.49克白色固体,纯度(HPLC)为98.2%,收率77.6%。
元素分析结构(分子式C73H60N2):理论值C,90.83;H,6.27;N,2.90;
测试值:C,90.54;H,6.60;N,2.86。
实施例5(化合物14)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,9.81克(0.025M)中间体d,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流18小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.80克白色固体,纯度(HPLC)为98.5%,收率69.5%。
元素分析结构(分子式C81H62N4O2):理论值C,86.6;H,5.56;N,4.99;O,2.85;
测试值:C,87.0;H,5.25;N,5.11;O,2.64。
实施例6(化合物09)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,7.94克(0.025M)中间体e,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流24小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.32克白色固体,纯度(HPLC)为98.4%,收率75.2%。
元素分析结构(分子式C69H52N2S2):理论值C,85.15;H,5.39;N,2.88;S,6.59;
测试值:C,84.92;H,5.60;N,2.75;O,6.73。
实施例7(化合物11)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,8.08克(0.025M)中间体f,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.49克白色固体,纯度(HPLC)为98.8%,收率76%。
元素分析结构(分子式C75H52N2):理论值C,91.43;H,5.73;N,2.84;
测试值:C,91.20;H,5.65;N,3.15。
实施例8(化合物16)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,9.84克(0.025M)中间体g,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到8.0克白色固体,纯度(HPLC)为98.53%,收率73.2%。
元素分析结构(分子式C81H60N2O2):理论值C,88.98;H,5.53;N,2.56;O,2.93;
测试值:C,89.05;H,5.60;N,2.48;O,2.87。
实施例9(化合物20)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,8.54克(0.025M)中间体h,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.83克白色固体,纯度(HPLC)为97.9%,收率76.7%。
元素分析结构(分子式C77H68N2):理论值C,90.55;H,6.71;N,2.74;
测试值:C,90.38;H,6.85;N,2.77。
实施例10(化合物33)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体B,5.63克(0.025M)中间体i,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.44克白色固体,纯度(HPLC)为98.9%,收率69%。
元素分析结构(分子式C59H52N2):理论值C,89.81;H,6.64;N,3.55;
测试值:C,90.02;H,6.45;N,3.53。
实施例11(化合物34)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体C,5.63克(0.025M)中间体i,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.50克白色固体,纯度(HPLC)为98.45%,收率69.7%。
元素分析结构(分子式C59H52N2):理论值C,89.81;H,6.64;N,3.55;
测试值:C,89.92;H,6.55;N,3.53。
实施例12(化合物35)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体D,5.63克(0.025M)中间体i,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.37克白色固体,纯度(HPLC)为98.25%,收率68.0%。
元素分析结构(分子式C59H52N2):理论值C,89.81;H,6.64;N,3.55;
测试值:C,89.90;H,6.65;N,3.45。
实施例13(化合物36)
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体G,7.53克(0.025M)中间体a,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.69克白色固体,纯度(HPLC)为98.6 5%,收率75.5%。
元素分析结构(分子式C69H52N2O2):理论值C,88.05;H,5.57;N,2.98;O,3.40;
测试值:C,88.15;H,5.62;N,3.06;O,3.17。
实施例14(化合物37)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体H,8.39克(0.025M)
中间体j,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.19克白色固体,纯度(HPLC)为98.33%,收率71.2%。
元素分析结构(分子式C75H48N2O2):理论值C,89.26;H,4.79;N,2.78;O,3.17;
测试值:C,89.01;H,4.86;N,2.75;O,3.38。
实施例15(化合物38)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体C,6.86克(0.025M)中间体k,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到6.58克白色固体,纯度(HPLC)为98.53%,收率74.2%。
元素分析结构(分子式C65H50N4):理论值C,88;H,5.68;N,6.32;
测试值:C,88.11;H,5.86;N,6.03。
实施例16(化合物40)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,5.23克(0.025M)中间体吖啶,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流26小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.55克白色固体,纯度(HPLC)为98.19%,收率73.28%。
元素分析结构(分子式C57H44N2):理论值C,90.44;H,5.68;N,3.70;
测试值:C,90.27;H,5.83;N,3.90。
实施例17(化合物47)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,6.43克(0.025M)中间体l,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流30小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.99克白色固体,纯度(HPLC)为98.46%,收率70.27%。
元素分析结构(分子式C63H36N2O2):理论值C,88.71;H,4.25;N,3.25;O,3.75;
测试值:C,88.67;H,4.42;N,3.18;O,3.73。
实施例18(化合物53)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,6.83克(0.025M)中间体M,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流27小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到6.65克白色固体,纯度(HPLC)为98.27%,收率75.14%。
元素分析结构(分子式C63H36N2O4):理论值C,85.50;H,4.10;N,3.17;O,7.23;
测试值:C,85.64;H,4.20;N,3.04;O,7.12。
实施例19(化合物61)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,9.36克(0.025M)中间体n,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流29小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得
到7.52克白色固体,纯度(HPLC)为98.04%,收率69.14%。
元素分析结构(分子式C81H58N4):理论值C,89.47;H,5.38;N,5.15;
测试值:C,89.64;H,5.42;N,4.94。
实施例20(化合物62)
250ml的四口瓶,氮气保护下,加入5.0克(0.01M)中间体A,8.54克(0.025M)中间体o,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流29小时,反应完全。自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到7.42克白色固体,纯度(HPLC)为98.33%,收率72.64%。
元素分析结构(分子式C75H60N2O2):理论值C,88.20;H,5.92;N,2.74;O,3.13;
测试值:C,88.25;H,5.87;N,2.91;O,2.97。
实施例21(化合物67)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.56克(0.01M)中间体I,5.63克(0.025M)中间体i,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到5.97克白色固体,纯度(HPLC)为97.87%,收率70.7%。
元素分析结构(分子式C63H60N2):理论值C,89.53;H,7.16;N,3.31;
测试值:C,89.60;H,7.20;N,3.20。
实施例22(化合物69)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.50克(0.01M)中间体J,7.53克(0.025M)中间体a,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到6.79克白色固体,纯度(HPLC)为97.47%,收率68.5%。
元素分析结构(分子式C73H54N2O2):理论值C,88.45;H,5.49;N,2.83;O,3.23
测试值:C,88.40;H,5.56;N,2.88;O,3.16
实施例23(化合物74)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.52克(0.01M)中间体K,7.53克(0.025M)中间体a,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到6.50克白色固体,纯度(HPLC)为98.27%,收率65.5%。
元素分析结构(分子式C71H52N4O2):理论值C,85.86;H,5.28;N,5.64;O,3.32
测试值:C,85.55;H,5.34;N,5.72;O,3.39
实施例24(化合物77)
现提供该化合物的具体合成路线:
250ml的四口瓶,氮气保护下,加入5.56克(0.01M)中间体I,4.98克(0.025M)中间体p,1.15克(0.012M)叔丁醇钠,0.1克醋酸钯,0.05克CXA(正丁基二(1-金刚烷基)膦),200ml甲苯,加热回流20小时,反应完全;自然冷却,过滤,
滤液旋蒸,过硅胶柱,用甲苯:乙醇=3:1(体积比)混合溶剂打浆,重结晶后得到4.82克白色固体,纯度(HPLC)为97.51%,收率60.8%。
元素分析结构(分子式C55H40N2S2):理论值C,83.30;H,5.08;N,3.53;S,8.09
测试值:C,83.12;H,5.24;N,3.47;S,8.17。
以下通过实施例25和比较例1~24详细说明本发明合成的化合物在OLED器件上的应用效果。本发明所述比较例1~24与实施例25相比,所述器件的制作工艺完全相同,并且所采用了相同的基板材料和电极材料,电极材料的膜厚也保持一致,所不同的是对器件中所使用的部分材料进行了一些调整,对比使用了本发明所述化合物制作的器件的性能。比较例1~24与实施例25所得器件的结构如表1所示;所得器件的性能测试结果如表2所示。
实施例25
如图1所示,透明基板层1用透明材料,如玻璃。对透明的ITO阳极层2(膜厚为150nm)进行洗涤,即依次进行碱洗涤、纯水洗涤、干燥后再进行紫外线-臭氧洗涤以清除透明ITO表面的有机残留物。
在进行了上述洗涤之后的ITO阳极层2上,利用真空蒸镀装置,蒸镀HAT-CN,其膜厚为10nm,这层有机材料作为空穴注入层3使用。紧接着蒸镀60nm厚度的TCTA(4,4',4″-三(咔唑-9-基)三苯胺)作为空穴传输层4。
上述空穴传输材料蒸镀结束后,制作OLED发光器件的发光层5,其结构包括OLED发光层5所使用材料CBP【4,4'-二(9-咔唑)联苯】作为主体材料,MQAB作为掺杂材料,掺杂比例为5%重量比,发光层5膜厚为25nm。
在上述发光层5之后,继续真空蒸镀电子传输层材料为Alq3(8-羟基喹啉铝)。该材料的真空蒸镀膜厚为30nm,此层为电子传输层6。
在电子传输层6上,通过真空蒸镀装置,制作膜厚为1nm的氟化锂(LiF)层,此层为电子注入层7。
在电子注入层7上,通过真空蒸镀装置,制作膜厚为80nm的铝(Al)层,此层为阴极反射电极层8使用。各层材料结构如下所示:
如上所述地完成OLED发光器件后,用公知的驱动电路将阳极和阴极连接起来,测量器件的发光效率,发光颜色,外部量子效率以及器件寿命(LT90:亮度衰减到初始亮度的90%)。其结果显示在表2
比较例1
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例1制备得到的材料。
比较例2
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例2制备得到的材料。
比较例3
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例3制备得到的材料。
比较例4
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例4制备得到的材料。
比较例5
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例5制备得到的材料。
比较例6
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例6制备得到的材料。
比较例7
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例7制备得到的材料。
比较例8
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例8制备得到的材料。
比较例9
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例9制备得到的材料。
比较例10
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例10制备得到的材料。
比较例11
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例11制备得到的材料。
比较例12
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例2制备得到的材料。
比较例13
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例13制备得到的材料。
比较例14
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例14制备得到的材料。
比较例15
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例15制备得到的材料。
比较例16
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的CBP改变为实施例16制备得到的材料。
比较例17
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的CBP改变为实施例17制备得到的材料。
比较例18
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的CBP改变为实施例18制备得到的材料。
比较例19
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的CBP改变为实施例19制备得到的材料。
比较例20
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的CBP改变为实施例20制备得到的材料。
比较例21
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的,MQAB改变为实施例21制备得到的材料。
比较例22
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例22制备得到的材料。
比较例23
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的MQAB改变为实施例23制备得到的材料。
比较例24
本比较例与实施例21不同之处在于:OLED发光器件的发光层5中的CBP改变为实施例24制备得到的材料。
表1
器件代号 | 空穴注入层 | 空穴传输层 | 发光层 | 电子传输层 | 电子注入层 |
(厚度) | (厚度) | (厚度) | (厚度) | (厚度) | |
实施例25 | HAT-CN(10nm) | TCTA(60nm) | CBP:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例1 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物1=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例2 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物3=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例3 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物6=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例4 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物7=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例5 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物14=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例6 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物9=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例7 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物11=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例8 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物16=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例9 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物20=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例10 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物33=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例11 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物34=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例12 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物35=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例13 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物36=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例14 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物37=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例15 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物38=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例16 | HAT-CN(10nm) | TCTA(60nm) | 化合物40:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例17 | HAT-CN(10nm) | TCTA(60nm) | 化合物47:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例18 | HAT-CN(10nm) | TCTA(60nm) | 化合物53:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例19 | HAT-CN(10nm) | TCTA(60nm) | 化合物61:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例20 | HAT-CN(10nm) | TCTA(60nm) | 化合物62:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例21 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物47=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例22 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物35=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例23 | HAT-CN(10nm) | TCTA(60nm) | CBP:化合物61=100:5(25nm) | Alq3(30nm) | LiF 1nm |
比较例24 | HAT-CN(10nm) | TCTA(60nm) | 化合物77:MQAB=100:5(25nm) | Alq3(30nm) | LiF 1nm |
表2
器件代号 | 发光效率 | 颜色 | 外部量子效率 | 驱动寿命 |
实施例25 | 1.0 | 浅蓝 | 1.0 | 1.0 |
比较例1 | 2.5 | 蓝色 | 1.8 | 2.0 |
比较例2 | 2.6 | 蓝色 | 1.9 | 2.0 |
比较例3 | 2.8 | 天蓝 | 2.3 | 2.6 |
比较例4 | 2.4 | 深蓝 | 1.8 | 1.9 |
比较例5 | 3.0 | 蓝绿 | 2.6 | 3.2 |
比较例6 | 2.4 | 天蓝 | 2.1 | 1.9 |
比较例7 | 3.1 | 蓝绿 | 2.8 | 3.5 |
比较例8 | 2.75 | 蓝色 | 2.15 | 2.45 |
比较例9 | 2.6 | 蓝色 | 1.8 | 2.5 |
比较例10 | 2.45 | 深蓝 | 1.85 | 2.1 |
比较例11 | 2.85 | 蓝色 | 2.15 | 2.50 |
比较例12 | 3.05 | 天蓝 | 2.70 | 2.80 |
比较例13 | 2.95 | 天蓝 | 2.65 | 3.0 |
比较例14 | 2.40 | 蓝色 | 2.0 | 2.55 |
比较例15 | 2.45 | 深蓝 | 2.40 | 2.05 |
比较例16 | 1.54 | 蓝色 | 1.51 | 1.88 |
比较例17 | 1.60 | 蓝色 | 1.40 | 2.01 |
比较例18 | 1.72 | 蓝色 | 1.41 | 1.85 |
比较例19 | 1.65 | 蓝色 | 1.50 | 1.72 |
比较例20 | 1.50 | 蓝色 | 1.35 | 1.79 |
比较例21 | 2.41 | 天蓝 | 2.35 | 2.51 |
比较例22 | 2.50 | 蓝色 | 2.42 | 2.65 |
比较例23 | 2.60 | 天蓝 | 2.30 | 2.54 |
比较例24 | 1.58 | 蓝色 | 1.50 | 1.68 |
注:以上数据都是以实施25例作为标准器件,实施例25所得器件在发光亮度为1000cd/m2时,发光效率为3.6cd/A,外部量子效率为3.0%;驱动寿命(发光亮度为初始亮度的90%)为30小时
由表2的结果可以看出,本发明所述化合物可应用于OLED发光器件制作,并且可以获得良好的器件表现。器件的发光效率、外量子效率均得到很大改善;同时器件寿命提升非常明显。本发明所述化合物在OLED发光器件中具有良好的应用效果,并具有良好的产业化前景。
虽然已通过实施例和优选实施方式公开了本发明,但应理解,本发明不限于所公开的实施方式。相反,本领域技术人员应明白,其意在涵盖各种变型和类似的安排。因此,所附权利要求的范围应与最宽的解释相一致以涵盖所有这样的变型和类似的安排。
Claims (7)
- 一种含有权利要求1~6任一项所述有机电致发光化合物的有机电致发光器件,其特征在于所述化合物作为发光层主体材料或者掺杂材料应用于有机电致发光二极管。
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