WO2017209357A1 - Bidirectional conductive pin, bidirectional conductive pattern module and method for preparing same - Google Patents

Bidirectional conductive pin, bidirectional conductive pattern module and method for preparing same Download PDF

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Publication number
WO2017209357A1
WO2017209357A1 PCT/KR2016/012421 KR2016012421W WO2017209357A1 WO 2017209357 A1 WO2017209357 A1 WO 2017209357A1 KR 2016012421 W KR2016012421 W KR 2016012421W WO 2017209357 A1 WO2017209357 A1 WO 2017209357A1
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WO
WIPO (PCT)
Prior art keywords
pattern
upper contact
lower contact
contact portion
bidirectional conductive
Prior art date
Application number
PCT/KR2016/012421
Other languages
French (fr)
Korean (ko)
Inventor
문해중
이지형
이은주
Original Assignee
주식회사 이노글로벌
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160134778A external-priority patent/KR20170137592A/en
Application filed by 주식회사 이노글로벌 filed Critical 주식회사 이노글로벌
Priority to CN201680001638.4A priority Critical patent/CN108283014A/en
Publication of WO2017209357A1 publication Critical patent/WO2017209357A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer

Definitions

  • the present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module, and a method of manufacturing the same, and more particularly, to a bidirectional conductive pin, a bidirectional conductive pattern module, and a fabrication thereof, which can compensate for a disadvantage of a pogo-pin type semiconductor test socket. It is about a method.
  • the semiconductor device After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor.
  • the positive test of the semiconductor device is performed by inserting a semiconductor test socket (or a contactor or a connector) formed between the semiconductor device and the test circuit board so as to be in electrical contact with a terminal of the semiconductor device.
  • the semiconductor test socket is also used in a burn-in test process during the manufacturing process of the semiconductor device, in addition to the final positive inspection of the semiconductor device.
  • the conventional Pogo-pin type semiconductor test socket has a limitation in manufacturing a semiconductor test socket for testing a semiconductor device to be integrated.
  • 1 to 3 are diagrams showing an example of a conventional Pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.
  • a conventional semiconductor test socket 100 includes a housing 110 having a through hole 111 formed in a vertical direction at a position corresponding to a terminal 131 of a semiconductor device 130; Pogo-pin 120 mounted in the through hole 111 of the housing 110 to electrically connect the terminal 131 of the semiconductor device 130 and the pad 141 of the test device 140. Is done.
  • the configuration of the pogo-pin (120) (pogo-pin) (120) is used as a pogo-pin (Pogo-pin) body, the barrel 124 having a cylindrical shape with an empty inside, and formed on the lower side of the barrel 124
  • the semiconductor device may be connected to a contact tip 123, a spring 122 connected to the contact tip 123 inside the barrel 124 and contracting and expanding a motion, and a spring 122 connected to the contact tip 123.
  • 130 is composed of a contact pin 121 to perform the vertical movement in accordance with the contact.
  • the spring 122 is contracted and expanded while absorbing the mechanical shock transmitted to the contact pin 121 and the contact tip 123, the terminal 131 of the semiconductor device 130 and the pad of the test device 140 141 is electrically connected to check whether there is an electrical defect.
  • the conventional Pogo-pin type semiconductor test socket as described above uses a physical spring to maintain elasticity in the vertical direction, inserts the spring and the pin into the barrel, and Since the process has to be inserted into the through-hole of the housing again, the process is complicated and the manufacturing cost increases due to the complexity of the process.
  • the physical configuration itself for the implementation of the electrical contact structure having elasticity in the vertical direction has a limit to implement the fine pitch, and the situation has already reached the limit to apply to the integrated semiconductor device in recent years.
  • the limited technology forms a perforated pattern in a vertical direction on a silicon main body made of an elastic silicon material, and then conductive powder inside the perforated pattern. It is a PCR socket type semiconductor test socket that fills the conductive pattern to form a conductive pattern.
  • the PCR-type semiconductor test socket also has a problem due to structural limitations of the PCR-type semiconductor test socket, such as a problem of shortening of life due to separation of conductive powder filled therein.
  • the present invention has been made to solve the above problems, to compensate for the shortcomings of the pogo-pin type and PCR-type semiconductor test socket, bi-directional conductivity that can replace the pogo-pin type semiconductor test socket
  • An object of the present invention is to provide a pin, a bidirectional conductive pattern module, and a method of manufacturing the same.
  • the conductive thin plate is formed by winding in the vertical shape in the axial direction, and the upper contact portion to elastically support during contact in the upper direction, and the thin plate having conductivity
  • a lower contact part formed by winding in a vertical shape with an axis in the vertical direction and supporting elastically when contacted in a lower direction, and at least one connection part electrically connecting the upper contact part and the lower contact part; Achieved by a bidirectional conductive pin.
  • the upper contact portion, the lower contact portion and the connecting portion may be formed together by winding a base pattern formed by patterning a conductive thin plate in a winding shape along the vertical direction.
  • the pin body may further include an insulating pin body having an elasticity formed between the upper contact portion and the lower contact portion to be accommodated therein.
  • the apparatus may further include at least one internal support part extending downward from the upper contact part, the lower end of which is spaced apart from the lower contact part by a predetermined distance.
  • the inner curled portion of the upper contact portion may protrude in an upward direction than the outer curled portion and may be formed stepped outward in the radial direction.
  • the inner contact portion of the lower contact portion may protrude in a lower direction than the outer curl portion to be stepped outward in the radial direction.
  • connection part may be formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  • the above object is, according to another embodiment of the present invention, in the bidirectional conductive pattern module, the insulating body and the inside of the insulating body in a state spaced apart from each other in the horizontal direction, each of the upper and lower portions of the insulating body A plurality of bidirectional conductive pins exposed on the top and bottom surfaces of the substrate;
  • Each of the bidirectional conductive pins is formed by winding a thin conductive sheet in an up-and-down direction in an axial spring shape to support elastically upon contact in an upward direction, and a thin conductive plate is axially in the vertical direction.
  • the bidirectional conductive pattern module characterized in that it comprises a lower contact portion which is formed in the form and is elastically supported during contact in the lower direction, and at least one connection portion that electrically connects the upper contact portion and the lower contact portion. do.
  • the upper contact portion, the lower contact portion and the connecting portion may be formed together by winding a base pattern formed by patterning a conductive thin plate in a winding shape along the vertical direction.
  • the apparatus may further include at least one internal support part extending downward from the upper contact part, the lower end of which is spaced apart from the lower contact part by a predetermined distance.
  • the inner curled portion of the upper contact portion may protrude in an upward direction than the outer curled portion and may be formed stepped outward in the radial direction.
  • the inner curled portion of the lower contact portion may protrude in a lower direction than the outer curled portion and may be stepped outward in the radial direction.
  • connection part may be formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  • the above object is, according to another embodiment of the present invention, in the method of manufacturing a bidirectional conductive pattern module, (a) by patterning a thin plate having conductivity, and a plurality of upper contact patterns spaced apart from each other in the horizontal direction, and up and down A base having a plurality of lower contact patterns spaced apart from the plurality of upper contact patterns in the horizontal direction and spaced apart from each other in the horizontal direction, and at least one connection pattern connecting the upper contact patterns and the lower contact patterns at mutually corresponding positions; Forming a pattern; (b) plating the base pattern; (c) connecting the plurality of upper contact portions, the plurality of lower contact portions, and the corresponding upper contact portion and the lower contact portion by rolling the shaft in the up-down direction such that each of the upper contact pattern and each of the lower contact patterns has a winding shape. It is also achieved by a method of manufacturing a bidirectional conductive pattern module comprising the step of forming a connecting portion.
  • connection pattern may be formed in a diagonal direction to connect the upper contact pattern and the lower contact pattern corresponding to each other.
  • the upper contact pattern and the lower contact pattern corresponding to each other in the step (c) may be formed around the same axis in an up and down direction so that the upper contact part and the lower contact part are formed at a position corresponding to the up and down direction.
  • step (a) at least one inner support pattern protruding from the upper contact pattern in the direction of the lower contact pattern is formed together with a thin plate having conductivity in the patterning process;
  • the inner support pattern may form an inner support part extending downward from the upper contact part through the step (c).
  • the upper contact pattern may have a different width in the vertical direction or may be stepped in the horizontal direction, such that the inner curled portion of the upper contact portion protrudes upward from the outer curled portion to step radially outwardly. Can be formed.
  • the lower contact pattern is formed in a different width in the vertical direction or stepped in the horizontal direction, so that the inner curled portion of the lower contact portion protrudes in a lower direction than the outer curled portion to step outward in the radial direction Can be formed.
  • connection pattern may be formed to have a predetermined width in the horizontal direction so that the connection part may support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  • the step of manufacturing the bidirectional conductive pattern module according to the manufacturing method of the bidirectional conductive pattern module, and the bidirectional conductive pattern module is also achieved by the method of manufacturing a bi-directional conductive pin comprising the step of cutting the insulating body of the upper and lower direction, but the interconnected one by one of the upper contact, the lower contact and the connecting unit to form a plurality of bi-directional conductive pins. .
  • the connecting portion is wound together wound in the circumferential direction It has elastic restoring force in the vertical direction, so that one bidirectional conductive pin can be realized in the vertical direction.
  • the main part of the main spring is first contacted and then sequentially contacted to the outside to allow more stable contact and stable restoration when the contact is removed. do.
  • the manufacturing method can be simplified and the manufacturing cost can be significantly reduced.
  • a semiconductor test in which a plurality of conductive patterns are formed in a horizontal direction and a depth direction by manufacturing a bidirectional conductive pattern module having a plurality of bidirectional conductive pins formed in a horizontal direction by simultaneously manufacturing a plurality of patterns in the horizontal direction and placing them in a depth direction. It is also possible to manufacture a socket for use.
  • 1 to 3 are diagrams for explaining a conventional Pogo-pin type semiconductor test socket
  • FIG. 5 and 6 are views for explaining a manufacturing method of a bidirectional conductive pin and a bidirectional conductive pattern module according to the present invention
  • the present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module and a method of manufacturing the same.
  • the bidirectional conductive pin according to the present invention is formed by winding a thin conductive plate in an up-and-down direction in an axial direction, and an upper contact part elastically supporting the contact in the upper direction, and a thin conductive plate is in the vertical direction. It is characterized in that it comprises a lower contact portion which is formed in a winding form and elastically supports when contacting in the lower direction, and at least one connecting portion electrically connecting the upper contact portion and the lower contact portion.
  • the bidirectional conductive pin 10 according to the present invention includes an upper contact 11, a lower contact 12, and a connection 13.
  • the bidirectional conductive pin 10 according to the present invention may further include a pin body 14.
  • Bi-directional conductive pin 10 is produced using a base pattern 100a formed through the patterning of a thin plate having conductivity, for example, a metal thin plate.
  • the base pattern 100a includes an upper contact pattern 11a, a lower contact pattern 12a, and at least one connection pattern 13a connecting them.
  • the upper contact pattern 11a and the lower contact pattern 12a of the base pattern 100a are dried two or more times with the axis (Axis, hereinafter equal) up and down, as shown in FIG. 4C.
  • the upper contact portion 11 and the lower contact portion 12 of the bidirectional conductive pin 10 according to the present invention can be formed.
  • connection pattern 13a is in the diagonal direction between the upper contact pattern 11a and the lower contact pattern 12a and the lower contact with the upper contact pattern 11a.
  • the pattern 12a is formed to be connected to each other, the upper contact pattern 11a and the lower contact pattern 12a are rolled together to form the upper contact portion 11 and the lower contact portion 12 in a winding shape, and thus It has a twisted shape as shown in (b).
  • the terminal of the inspection circuit board contacts the lower contact portion 12 from the lower direction to the upper direction
  • the terminal of the inspection circuit board is sequentially contacted from the inner portion to the outer portion of the winding shape to elastically support the contact in the lower direction.
  • the connecting portion 13 electrically connects the upper contact portion 11 and the lower contact portion 12, so that the upper contact portion 11, the connecting portion 13, and the lower contact portion 12 form one conductive line in the vertical direction. It becomes possible to use for the inspection of a semiconductor element by doing so.
  • the pin body 14 is formed between the upper contact portion 11 and the lower contact portion 12 so that the connecting portion 13 is accommodated therein to support the upper contact portion 11 and the lower contact portion 12.
  • the pin body 14 is made of an insulating material having elasticity, for example, a silicon material.
  • a thin metal plate is prepared and the metal thin plate is patterned to form a base pattern 100a as shown in FIG. 5A.
  • the metal thin plate may be provided with a material having conductivity, but the conductivity may be formed through a plating process to be described later, and the conductivity of the metal thin plate may not be essential.
  • the material of the metal sheet may be formed of copper or a copper alloy, for example BeCu.
  • an etching method or a stamping method is applied as an example of the metal thin plate patterning method.
  • the base pattern 100a formed through the patterning process of the thin metal plate may include a plurality of upper contact patterns 11a, a plurality of lower contact patterns 12a, and corresponding upper portions.
  • the connection pattern 13a connects the contact pattern 11a and the lower contact pattern 12a.
  • the configuration of one upper contact pattern 11a, lower contact pattern 12a, and a connection pattern 13a connecting the same is as shown in FIG. 4A, and is shown in FIG. 5A.
  • the connection pattern 13a has a shape that is curved in the horizontal direction.
  • the plurality of upper contact patterns 11a are formed to be spaced apart from each other in the horizontal direction.
  • the plurality of lower contact patterns 12a are formed to be spaced apart from each other in the horizontal direction while being spaced apart from the upper contact pattern 11a in the vertical direction.
  • the base pattern 100a may be configured to simultaneously perform subsequent operations using the plurality of upper contact patterns 11a, the plurality of lower contact patterns 12a, and the connection pattern 13a, respectively. And an upper support pattern 121 connected to the upper connection pattern 123, and a lower support pattern 122 connected to each of the lower contact patterns 12a and the lower connection pattern 124.
  • the plating process is performed to improve the conductivity of the base pattern 100a.
  • the nickel plating and gold plating are sequentially performed.
  • the upper and lower directions are rolled around the axis such that each of the upper contact patterns 11a and each of the lower contact patterns 12a have a winding shape.
  • the upper contact portion 11, the lower contact portion 12 and the connecting portion 13 are formed, respectively.
  • the connection part 13 is formed in a twisted shape in which the connection pattern 13a is rolled together.
  • the upper contact pattern 11a and the lower contact pattern 12a corresponding to each other may be rolled about the same axis in the vertical direction to form the upper contact portion 11 and the lower contact portion 12 at positions corresponding to the vertical direction.
  • the upper contact portion 11 when the upper contact portion 11, the lower contact portion 12 and the connecting portion 13 is formed, as shown in (c) of FIG. 5, the upper surface of each upper contact portion 11, and The insulating body 110 is formed such that the lower surface of the lower contact portion 12 is exposed in the upper direction and the lower direction.
  • the insulating main body 110 is formed such that the connecting portion 13 can be accommodated therein to the extent that the lower portion of the upper contact portion 11 and the upper portion of the lower contact portion 12 are covered. Yes.
  • the base pattern 100a illustrated in FIG. 5B may be installed in a mold, and then the liquid silicone may be injected and then cured to form the insulating body 110.
  • the upper surface of the upper contact portion 11 and the lower surface of the lower contact portion 12 are exposed to the outside of the insulating body 110, the remaining portion of the upper contact portion 11, of the lower contact portion 12
  • the remaining part and the connection part 13 are positioned inside the insulating body 110.
  • the upper connection pattern 123 and the lower connection pattern through laser cutting or the like along the cutting lines C1 and C2 shown in FIG.
  • the bidirectional conductive pattern module 100 as shown in FIG. 6A can be manufactured.
  • the bidirectional conductive pattern modules 100 and 100 are spaced apart from each other in the transverse direction inside the insulating bodies 110 and 110, respectively. Is formed. At this time.
  • the upper contact portion 11, the lower contact portion 12, and the connection portion 13 of the honeycomb constitute one bidirectional conductive pin 10 and form one conductive line in the vertical direction.
  • the semiconductor test socket having the plurality of conductive patterns in the horizontal direction and the depth direction can be configured.
  • one bidirectional conductive pin 10 as shown in FIG. 6B can be manufactured.
  • One bidirectional conductive pin 10 manufactured as described above may replace the existing pogo pin.
  • FIGS. 7 to 11 illustrate examples of various types of base patterns 100a.
  • the technical idea according to the present invention is as described above, and various modifications and other modifications of the base pattern 100a illustrated in FIGS. 7 to 11 are also included in the technical idea of the present invention. That is, those skilled in the art will be able to manufacture the base pattern 100a according to various modifications within the scope of the technical idea of the present invention in addition to the embodiments illustrated in the present invention.
  • FIG. 10 illustrates an example in which the upper contact portion 11 and the lower contact portion 12 are changed in shape according to the shape of the upper contact pattern 11a and the lower contact pattern 12a.
  • the inner support pattern 15a when the inner support pattern 15a is formed from the upper contact pattern 11a to the lower side, the insulating main body 110 or the pin body 14 is formed in FIG. 11.
  • the inner support 15 is formed as shown in (b).
  • the inner support pattern 15a may be formed together in the patterning process of the metal sheet in the exaggeration of the formation of the base pattern 100a through the patterning of the metal sheet.
  • the bidirectional conductive pin 10 ′ includes an upper contact 11 ′, a lower contact 12 ′ and a connection 13 ′.
  • the bidirectional conductive pin 10 ′ may include an internal support 15 ′ and a pin body 14.
  • the upper contact pattern 11a ′ is formed to be stepped in the horizontal direction. Accordingly, when the upper contact pattern 11a 'is rolled up in an up-and-down direction in a spring shape to form the upper contact portion 11', as shown in FIG. 12 (b), the upper contact portion 11 ' The inner curled portion projects upwards from the outer curled portion. That is, as shown in FIG. 12B, the upper contact portion 11 ′ is stepped radially outward.
  • the inner curled portion first contacts and moves downward, and the outer curled portion further contacts to make more stable contact and elastic contact. This becomes possible.
  • the upper contact pattern 11a ′ is formed to be stepped in the horizontal direction, but as in the embodiment illustrated in FIGS. 10B, 10C, and 10D. Since the upper contact pattern 11a ′ is formed to have a different width in the vertical direction, the upper contact portion 11 ′ may be formed to have a shape protruding upward toward the inner side.
  • the lower contact pattern 12a ′ may be stepped in the horizontal direction. Accordingly, when the lower contact pattern 12a 'is rolled up in an up-and-down direction to form a lower contact part 12', as shown in FIG. 12 (b), the lower contact part 12 ' The inner curled portion projects outward from the outer curled portion. That is, as shown in FIG. 12B, the lower contact portion 12 ′ is stepped radially outward.
  • the inner curled portion first contacts and moves downward, and the outer curled portion further contacts to make more stable contact and elasticity. Contact is possible.
  • the lower contact pattern 12a ′ is formed to be stepped in the horizontal direction, but as in the embodiment illustrated in FIGS. 10B, 10B, and 10D. Since the lower contact pattern 12a ′ is formed to have a different width in the vertical direction, the lower contact part 12 ′ may be formed to have a shape protruding downward toward the inner side.
  • the bidirectional conductive pin 10 ′′ according to the present invention includes an upper contact 11 ′′, a lower contact 12 ′′ and a connection 13 ′′. 13 illustrates an example in which the inner support 15 'is not provided.
  • the pin body 14 is not formed, and the connecting portion 13 ′′ is the upper contact 11 ′′ between the upper contact 11 ′′ and the lower contact 12 ′′.
  • the connection pattern 13a ′′ is formed to have a predetermined width in the horizontal direction, through which the upper contact pattern 11a ′′ and the lower contact pattern 12a ′ are formed.
  • the connection pattern 13a' ' is also dried together, and the connection part 13' 'formed by the connection pattern 13a' 'is illustrated in FIG.
  • it has a cylindrical shape to support the upper contact portion 11 '' and the lower contact portion 12 '' in the vertical direction.
  • connection portion 13 '' formed by the connection pattern 13a '' has a cylindrical shape or is provided so as to form only a part of the cylinder. It can be formed in the width of.
  • connection part 13a connection pattern
  • pin body 15 internal support
  • the present invention can be applied to the inspection of the electrical performance or burn-in test in the manufacturing process of semiconductor devices, printed circuit boards, LCD displays and the like.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

The present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module and a method for preparing same. A bidirectional conductive pin, according to the present invention, comprises: an upper contact portion which is formed by means of winding a conductive thin plate into the form of a spring with respect to a vertical axis and is for resiliently supporting upon contact from the upper part; a lower contact portion which is formed by means of winding a conductive thin plate into the form of a spring with respect to the vertical axis and is for resiliently supporting upon contact from the lower part; and at least one connecting portion which is for electrically connecting the upper contact portion and the lower contact portion. Therefore, conductive thin metal plates are patterned, spring-type upper contact portion and lower contact portion are formed by winding the patterns by means of molding and the like, and connecting portions are wound and twisted together in the circumferential direction and have a resilient restoring force in the vertical direction, and thus a vertical bidirectional conductive pin can be produced.

Description

양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법Bidirectional conductive pins, bidirectional conductive pattern modules, and a method of manufacturing the same
본 발명은 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법에 관한 것으로서, 보다 상세하게는 포고-핀 타입의 반도체 테스트 소켓이 갖는 단점을 보완할 수 있는 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법에 관한 것이다.The present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module, and a method of manufacturing the same, and more particularly, to a bidirectional conductive pin, a bidirectional conductive pattern module, and a fabrication thereof, which can compensate for a disadvantage of a pogo-pin type semiconductor test socket. It is about a method.
반도체 소자는 제조 과정을 거친 후 전기적 성능의 양불을 판단하기 위한 검사를 수행하게 된다. 반도체 소자의 양불 검사는 반도체 소자의 단자와 전기적으로 접촉될 수 있도록 형성된 반도체 테스트 소켓(또는 콘텍터 또는 커넥터)을 반도체 소자와 검사회로기판 사이에 삽입한 상태에서 검사가 수행된다. 그리고, 반도체 테스트 소켓은 반도체 소자의 최종 양불 검사 외에도 반도체 소자의 제조 과정 중 번-인(Burn-In) 테스트 과정에서도 사용되고 있다.After the semiconductor device is manufactured, the semiconductor device performs a test to determine whether the electrical performance is poor. The positive test of the semiconductor device is performed by inserting a semiconductor test socket (or a contactor or a connector) formed between the semiconductor device and the test circuit board so as to be in electrical contact with a terminal of the semiconductor device. The semiconductor test socket is also used in a burn-in test process during the manufacturing process of the semiconductor device, in addition to the final positive inspection of the semiconductor device.
반도체 소자의 집적화 기술의 발달과 소형화 추세에 따라 반도체 소자의 단자 즉, 리드의 크기 및 간격도 미세화되는 추세이고, 그에 따라 테스트 소켓의 도전 패턴 상호간의 간격도 미세하게 형성하는 방법이 요구되고 있다.With the development and miniaturization of semiconductor device integration technology, the size and spacing of terminals of semiconductor devices, that is, leads, are also miniaturized. Accordingly, there is a demand for a method of forming minute spacing between conductive patterns of test sockets.
그런데, 기존의 포고-핀(Pogo-pin) 타입의 반도체 테스트 소켓으로는 집적화되는 반도체 소자를 테스트하기 위한 반도체 테스트 소켓을 제작하는데 한계가 있었다. 도 1 내지 도 3은 한국공개특허 제10-2011-0065047호에 개시된 종래의 포고-핀(Pogo-pin) 타입의 반도체 테스트 소켓의 예를 나타낸 도면이다.However, the conventional Pogo-pin type semiconductor test socket has a limitation in manufacturing a semiconductor test socket for testing a semiconductor device to be integrated. 1 to 3 are diagrams showing an example of a conventional Pogo-pin type semiconductor test socket disclosed in Korean Patent Laid-Open No. 10-2011-0065047.
도 1 내지 도 3을 참조하여 설명하면 기존이 반도체 테스트 소켓(100)은 반도체 디바이스(130)의 단자(131)와 대응되는 위치에 상하방향으로 관통공(111)이 형성된 하우징(110)과, 하우징(110)의 관통공(111) 내에 장착되어 반도체 디바이스(130)의 단자(131) 및 테스트 장치(140)의 패드(141)를 전기적으로 연결시키는 포고-핀(Pogo-pin)(120)으로 이루어진다.1 to 3, a conventional semiconductor test socket 100 includes a housing 110 having a through hole 111 formed in a vertical direction at a position corresponding to a terminal 131 of a semiconductor device 130; Pogo-pin 120 mounted in the through hole 111 of the housing 110 to electrically connect the terminal 131 of the semiconductor device 130 and the pad 141 of the test device 140. Is done.
포고-핀(Pogo-pin)(120)의 구성은, 포고-핀(Pogo-pin) 본체로 사용되며 내부가 비어있는 원통형 형태를 가지는 배럴(124)과, 배럴(124)의 하측에 형성되는 접촉팁(123)과, 배럴(124) 내부에서 접촉팁(123)과 연결되어 수축과 팽창 운동을 하는 스프링(122) 및 접촉팁(123)과 연결된 스프링(122) 반대편에 연결되어 반도체 디바이스(130)와의 접촉에 따라 상하운동을 수행하는 접촉핀(121)으로 구성된다.The configuration of the pogo-pin (120) (pogo-pin) (120) is used as a pogo-pin (Pogo-pin) body, the barrel 124 having a cylindrical shape with an empty inside, and formed on the lower side of the barrel 124 The semiconductor device may be connected to a contact tip 123, a spring 122 connected to the contact tip 123 inside the barrel 124 and contracting and expanding a motion, and a spring 122 connected to the contact tip 123. 130 is composed of a contact pin 121 to perform the vertical movement in accordance with the contact.
이때, 스프링(122)은 수축 및 팽창을 하면서 접촉핀(121)과 접촉팁(123)에 전달되는 기계적인 충격을 흡수하면서 반도체 디바이스(130)의 단자(131)와 테스트 장치(140)의 패드(141)를 전기적으로 접속시켜 전기적인 불량여부를 검사하게 한다.At this time, the spring 122 is contracted and expanded while absorbing the mechanical shock transmitted to the contact pin 121 and the contact tip 123, the terminal 131 of the semiconductor device 130 and the pad of the test device 140 141 is electrically connected to check whether there is an electrical defect.
그런데, 상기와 같은 기존의 포고-핀(Pogo-pin) 타입의 반도체 테스트 소켓은 상하 방향으로의 탄성을 유지하기 위해 물리적인 스프링을 사용하게 되고, 배럴 내부에 스프링과 핀을 삽입하고, 배럴을 다시 하우징의 관통공 내부에 삽입하여야 하므로 그 공정이 복잡할 뿐만 아니라 공정의 복잡성으로 인해 제조 가격이 상승하는 문제가 있다.However, the conventional Pogo-pin type semiconductor test socket as described above uses a physical spring to maintain elasticity in the vertical direction, inserts the spring and the pin into the barrel, and Since the process has to be inserted into the through-hole of the housing again, the process is complicated and the manufacturing cost increases due to the complexity of the process.
뿐만 아니라, 상하 방향으로 탄성을 갖는 전기적 접촉 구조의 구현을 위한 물리적인 구성 자체가 미세 피치를 구현하는데 한계가 있으며, 근래에 집적화된 반도체 소자에는 적용하는데 이미 한계치까지 도달해 있는 실정이다.In addition, the physical configuration itself for the implementation of the electrical contact structure having elasticity in the vertical direction has a limit to implement the fine pitch, and the situation has already reached the limit to apply to the integrated semiconductor device in recent years.
포고-핀(Pogo-pin) 타입의 반도체 소자의 한계를 극복하고자 제한된 기술이, 탄성 재질의 실리콘 소재로 제작되는 실리콘 본체 상에 수직 방향으로 타공 패턴을 형성한 후, 타공된 패턴 내부에 도전성 분말을 충진하여 도전 패턴을 형성하는 PCR 소켓 타입의 반도체 테스트 소켓이다.In order to overcome the limitations of the pogo-pin type semiconductor device, the limited technology forms a perforated pattern in a vertical direction on a silicon main body made of an elastic silicon material, and then conductive powder inside the perforated pattern. It is a PCR socket type semiconductor test socket that fills the conductive pattern to form a conductive pattern.
그러나, PCR 타입의 반도체 테스트 소켓은 내부에 충진되는 도전성 분말의 이탈로 인한 수명의 단축 문제 등과 같이 PCR 타입의 반도체 테스트 소켓의 구조적 한계로 인해 갖는 문제점 또한 가지고 있다.However, the PCR-type semiconductor test socket also has a problem due to structural limitations of the PCR-type semiconductor test socket, such as a problem of shortening of life due to separation of conductive powder filled therein.
따라서, 미세 피치의 구현이 가능하면서도 높이의 제한이나 PCR 타입의 반도체 테스트 소켓과 같은 다른 방식의 반도체 테스트 소켓이 갖는 문제점을 해소할 후 있는 다른 형태의 반도체 테스트 소켓의 개발이 요구되고 있다.Accordingly, there is a need for development of other types of semiconductor test sockets capable of realizing fine pitches, but also to solve the problems of height limitations and other types of semiconductor test sockets such as PCR type semiconductor test sockets.
이에, 본 발명은 상기와 같은 문제점을 해소하기 위해 안출된 것으로서, 포고-핀 타입과 PCR 타입의 반도체 테스트 소켓이 갖는 단점을 보완하여, 포고-핀 타입의 반도체 테스트 소켓을 대체할 수 있는 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법을 제공하는데 그 목적이 있다.Accordingly, the present invention has been made to solve the above problems, to compensate for the shortcomings of the pogo-pin type and PCR-type semiconductor test socket, bi-directional conductivity that can replace the pogo-pin type semiconductor test socket An object of the present invention is to provide a pin, a bidirectional conductive pattern module, and a method of manufacturing the same.
상기 목적은 본 발명에 따라, 양방향 도전성 핀에 있어서, 도전성을 갖는 박판이 상하 방향을 축으로 태엽 형태로 말려 형성되어 상부 방향에서의 접촉시 탄성적으로 지지하는 상부 접촉부와, 도전성을 갖는 박판이 상기 상하 방향을 축으로 태엽 형태로 말려 형성되어 하부 방향에서의 접촉시 탄성적으로 지지하는 하부 접촉부와, 상기 상부 접촉부와 상기 하부 접촉부를 전기적으로 연결하는 적어도 하나의 연결부를 포함하는 것을 특징으로 하는 양방향 도전성 핀에 의해서 달성된다.According to the present invention, in the bidirectional conductive pin, the conductive thin plate is formed by winding in the vertical shape in the axial direction, and the upper contact portion to elastically support during contact in the upper direction, and the thin plate having conductivity A lower contact part formed by winding in a vertical shape with an axis in the vertical direction and supporting elastically when contacted in a lower direction, and at least one connection part electrically connecting the upper contact part and the lower contact part; Achieved by a bidirectional conductive pin.
여기서, 상기 상부 접촉부, 상기 하부 접촉부 및 상기 연결부는 도전성을 갖는 박판의 패터닝을 통해 형성된 베이스 패턴이 상기 상하 방향을 축으로 태엽 형태로 말려 함께 형성될 수 있다.Here, the upper contact portion, the lower contact portion and the connecting portion may be formed together by winding a base pattern formed by patterning a conductive thin plate in a winding shape along the vertical direction.
또한, 상기 상부 접촉부와 상기 하부 접촉부 사이에 상기 연결부가 내부에 수용되도록 형성되는 탄성을 갖는 절연성 재질의 핀 본체를 더 포함할 수 있다.The pin body may further include an insulating pin body having an elasticity formed between the upper contact portion and the lower contact portion to be accommodated therein.
그리고, 상기 상부 접촉부로부터 하부로 연장되되 하부 말단이 상기 하부 접촉부와 소정 간격 이격되도록 형성된 적어도 하나의 내부 지지부를 더 포함할 수 있다.The apparatus may further include at least one internal support part extending downward from the upper contact part, the lower end of which is spaced apart from the lower contact part by a predetermined distance.
그리고, 상기 상부 접촉부의 내측 말린 부분은 외측 말린 부분보다 상부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성될 수 있다.In addition, the inner curled portion of the upper contact portion may protrude in an upward direction than the outer curled portion and may be formed stepped outward in the radial direction.
그리고, 상기 하부 접촉부의 내측 말린 부분은 외측 말린 부분보다 하부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성될 수 있다.The inner contact portion of the lower contact portion may protrude in a lower direction than the outer curl portion to be stepped outward in the radial direction.
또한, 상기 연결부는 가로 방향으로 소정 폭을 갖도록 형성되어 상기 상부 접촉부와 상기 하부 접촉부 사이에서 상기 상부 접촉부와 상기 하부 접촉부를 상기 상하 방향으로 지지할 수 있다.In addition, the connection part may be formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
한편, 상기 목적은 본 발명의 다른 실시 형태에 따라, 양방향 도전성 패턴 모듈에 있어서, 절연성 본체와, 가로 방향으로 상호 이격된 상태로 상기 절연성 본체 내부에 배치되고, 각각의 상부 및 하부가 상기 절연성 본체의 상부 표면 및 하부 표면에 노출되는 복수의 양방향 도전성 핀을 포함하며; 각각의 상기 양방향 도전성 핀은 도전성을 갖는 박판이 상하 방향을 축으로 태엽 형태로 말려 형성되어 상부 방향에서의 접촉시 탄성적으로 지지하는 상부 접촉부와, 도전성을 갖는 박판이 상기 상하 방향을 축으로 태엽 형태로 말려 형성되어 하부 방향에서의 접촉시 탄성적으로 지지하는 하부 접촉부와, 상기 상부 접촉부와 상기 하부 접촉부를 전기적으로 연결하는 적어도 하나의 연결부를 포함하는 것을 특징으로 하는 양방향 도전성 패턴 모듈에 의해서도 달성된다.On the other hand, the above object is, according to another embodiment of the present invention, in the bidirectional conductive pattern module, the insulating body and the inside of the insulating body in a state spaced apart from each other in the horizontal direction, each of the upper and lower portions of the insulating body A plurality of bidirectional conductive pins exposed on the top and bottom surfaces of the substrate; Each of the bidirectional conductive pins is formed by winding a thin conductive sheet in an up-and-down direction in an axial spring shape to support elastically upon contact in an upward direction, and a thin conductive plate is axially in the vertical direction. It is also achieved by the bidirectional conductive pattern module, characterized in that it comprises a lower contact portion which is formed in the form and is elastically supported during contact in the lower direction, and at least one connection portion that electrically connects the upper contact portion and the lower contact portion. do.
여기서, 상기 상부 접촉부, 상기 하부 접촉부 및 상기 연결부는 도전성을 갖는 박판의 패터닝을 통해 형성된 베이스 패턴이 상기 상하 방향을 축으로 태엽 형태로 말려 함께 형성될 수 있다.Here, the upper contact portion, the lower contact portion and the connecting portion may be formed together by winding a base pattern formed by patterning a conductive thin plate in a winding shape along the vertical direction.
또한, 상기 상부 접촉부로부터 하부로 연장되되 하부 말단이 상기 하부 접촉부와 소정 간격 이격되도록 형성된 적어도 하나의 내부 지지부를 더 포함할 수 있다.The apparatus may further include at least one internal support part extending downward from the upper contact part, the lower end of which is spaced apart from the lower contact part by a predetermined distance.
그리고, 상기 상부 접촉부의 내측 말린 부분은 외측 말린 부분보다 상부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성될 수 있다.In addition, the inner curled portion of the upper contact portion may protrude in an upward direction than the outer curled portion and may be formed stepped outward in the radial direction.
여기서, 상기 하부 접촉부의 내측 말린 부분은 외측 말린 부분보다 하부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성될 수 있다.Here, the inner curled portion of the lower contact portion may protrude in a lower direction than the outer curled portion and may be stepped outward in the radial direction.
또한, 상기 연결부는 가로 방향으로 소정 폭을 갖도록 형성되어 상기 상부 접촉부와 상기 하부 접촉부 사이에서 상기 상부 접촉부와 상기 하부 접촉부를 상기 상하 방향으로 지지할 수 있다.In addition, the connection part may be formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
한편, 상기 목적은 본 발명의 또 다른 실시 형태에 따라, 양방향 도전성 패턴 모듈의 제조방법에 있어서, (a) 도전성을 갖는 박판을 패터닝하여, 가로 방향으로 상호 이격된 복수의 상부 접촉 패턴과, 상하 방향으로 복수의 상기 상부 접촉 패턴과 이격되고 상기 가로 방향으로 상호 이격된 복수의 하부 접촉 패턴과, 상호 대응하는 위치의 상기 상부 접촉 패턴과 상기 하부 접촉 패턴을 연결하는 적어도 하나의 연결 패턴을 갖는 베이스 패턴을 형성하는 단계와; (b) 상기 베이스 패턴을 도금하는 단계와; (c) 각각의 상기 상부 접촉 패턴과 각각의 상기 하부 접촉 패턴이 태엽 형상을 갖도록 상기 상하 방향을 축으로 말아 복수의 상부 접촉부, 복수의 하부 접촉부 및 상호 대응하는 상기 상부 접촉부와 상기 하부 접촉부를 연결하는 연결부를 형성하는 단계를 포함하는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법에 의해서도 달성된다.On the other hand, the above object is, according to another embodiment of the present invention, in the method of manufacturing a bidirectional conductive pattern module, (a) by patterning a thin plate having conductivity, and a plurality of upper contact patterns spaced apart from each other in the horizontal direction, and up and down A base having a plurality of lower contact patterns spaced apart from the plurality of upper contact patterns in the horizontal direction and spaced apart from each other in the horizontal direction, and at least one connection pattern connecting the upper contact patterns and the lower contact patterns at mutually corresponding positions; Forming a pattern; (b) plating the base pattern; (c) connecting the plurality of upper contact portions, the plurality of lower contact portions, and the corresponding upper contact portion and the lower contact portion by rolling the shaft in the up-down direction such that each of the upper contact pattern and each of the lower contact patterns has a winding shape. It is also achieved by a method of manufacturing a bidirectional conductive pattern module comprising the step of forming a connecting portion.
여기서, (d) 복수의 상기 상부 접촉부의 상부 표면과, 복수의 상기 하부 접촉부의 하부 표면이 각각 상부 방향 및 하부 방향으로 노출된 상태로 상기 연결부가 내부에 수용되도록 탄성을 갖는 절연성 재질의 절연성 본체를 형성하는 단계를 더 포함할 수 있다.Here, (d) an insulating main body of an insulating material having elasticity such that upper portions of the upper contact portions and lower surfaces of the lower contact portions are exposed in the upper direction and the lower direction, respectively, so that the connection portion is accommodated therein. It may further comprise forming a.
또한, 상기 (a) 단계에서 상기 연결 패턴은 대각선 방향으로 형성되어 상호 대응하는 상기 상부 접촉 패턴과 상기 하부 접촉 패턴을 연결할 수 있다.In addition, in the step (a), the connection pattern may be formed in a diagonal direction to connect the upper contact pattern and the lower contact pattern corresponding to each other.
그리고, 상기 (c) 단계에서 상호 대응하는 상기 상부 접촉 패턴과 상기 하부 접촉 패턴은 상하 방향으로 동일 축을 중심으로 말려 상하 방향으로 대응하는 위치에 상기 상부 접촉부와 상기 하부 접촉부가 형성될 수 있다.In addition, the upper contact pattern and the lower contact pattern corresponding to each other in the step (c) may be formed around the same axis in an up and down direction so that the upper contact part and the lower contact part are formed at a position corresponding to the up and down direction.
그리고, 상기 (a) 단계에서는 상기 상부 접촉 패턴으로부터 상기 하부 접촉 패턴 방향으로 돌출되는 적어도 하나의 내부 지지 패턴이 도전성을 갖는 박판을 패터닝 과정에서 함께 형성되며; 상기 내부 지지 패턴은 상기 (c) 단계를 통해 상기 상부 접촉부로부터 하부 방향으로 연장되는 내부 지지부를 형성할 수 있다.In the step (a), at least one inner support pattern protruding from the upper contact pattern in the direction of the lower contact pattern is formed together with a thin plate having conductivity in the patterning process; The inner support pattern may form an inner support part extending downward from the upper contact part through the step (c).
그리고, 상기 상부 접촉 패턴은 상기 상하 방향으로의 폭이 상이하게 형성되거나 상기 가로 방향으로 단차지게 형성되어, 상기 상부 접촉부의 내측 말린 부분이 외측 말린 부분보다 상부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성될 수 있다.The upper contact pattern may have a different width in the vertical direction or may be stepped in the horizontal direction, such that the inner curled portion of the upper contact portion protrudes upward from the outer curled portion to step radially outwardly. Can be formed.
또한, 상기 하부 접촉 패턴은 상기 상하 방향으로의 폭이 상이하게 형성되거나 상기 가로 방향으로 단차지게 형성되어, 상기 하부 접촉부의 내측 말린 부분이 외측 말린 부분보다 하부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성될 수 있다.In addition, the lower contact pattern is formed in a different width in the vertical direction or stepped in the horizontal direction, so that the inner curled portion of the lower contact portion protrudes in a lower direction than the outer curled portion to step outward in the radial direction Can be formed.
그리고, 상기 연결 패턴은 가로 방향으로 소정 폭을 갖도록 형성되어 상기 연결부가 상기 상부 접촉부와 상기 하부 접촉부 사이에서 상기 상부 접촉부와 상기 하부 접촉부를 상기 상하 방향으로 지지할 수 있다.The connection pattern may be formed to have a predetermined width in the horizontal direction so that the connection part may support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
한편, 상기 목적은 본 발명의 또 다른 실시 형태에 따라, 양방향 도전성 핀의 제조방법에 있어서, 상기의 양방향 도전성 패턴 모듈의 제조 방법에 따라 양방향 도전성 패턴 모듈을 제조하는 단계와, 상기 양방향 도전성 패턴 모듈의 절연성 본체를 상하 방향으로 절단하되 상호 연결된 하나씩의 상부 접촉부, 하부 접촉부 및 연결부 단위로 절단하여 복수의 양방향 도전성 핀을 형성하는 단계를 포함하는 것을 특징으로 하는 양방향 도전성 핀의 제조방법에 의해서도 달성된다.On the other hand, according to another embodiment of the present invention, in the manufacturing method of the bidirectional conductive pin, the step of manufacturing the bidirectional conductive pattern module according to the manufacturing method of the bidirectional conductive pattern module, and the bidirectional conductive pattern module It is also achieved by the method of manufacturing a bi-directional conductive pin comprising the step of cutting the insulating body of the upper and lower direction, but the interconnected one by one of the upper contact, the lower contact and the connecting unit to form a plurality of bi-directional conductive pins. .
상기와 같은 구성에 따라 본 발명에 따르면, 도전성을 갖는 금속 박판을 패터닝하고, 금형 등의 방법을 패턴을 말아 태엽 형태의 상부 접촉부 및 하부 접촉부를 형성하고, 연결부가 원주 방향으로 함께 감겨 꼬인 형태를 가져 상하 방향으로 탄성적으로 복원력을 가지게 되어 상하 방향으로 하나의 양방향 도전성 핀이 구현 가능하게 된다.According to the present invention according to the configuration as described above, by patterning the metal thin plate with conductivity, and rolled the pattern using a method such as a mold to form the upper contact portion and the lower contact portion of the winding shape, the connecting portion is wound together wound in the circumferential direction It has elastic restoring force in the vertical direction, so that one bidirectional conductive pin can be realized in the vertical direction.
또한, 태엽 형태의 상부 접촉부가 반도체 소자의 단자, 예를 들어 볼에 접촉할 때, 태엽 내부 부분부터 먼저 접촉하여 외부로 순차적으로 접촉되어 보다 안정적인 접촉과, 접촉이 제거될 때 안정적인 복원이 가능하게 된다.In addition, when the upper contact portion in the form of a spring comes into contact with the terminal of the semiconductor element, for example, a ball, the main part of the main spring is first contacted and then sequentially contacted to the outside to allow more stable contact and stable restoration when the contact is removed. do.
또한, 금속 박판을 에칭이나 스탬핑 방법을 이용해 패터닝하고, 금형 등으로 원통 형상으로 말아 제조함으로써, 그 제조방법이 간소화될 뿐만 아니라 제조비용 또한 현저히 감소시킬 수 있게 된다.In addition, by patterning the thin metal plate using an etching or stamping method, and rolling it into a cylindrical shape with a mold or the like, the manufacturing method can be simplified and the manufacturing cost can be significantly reduced.
또한, 가로 방향으로 복수개의 패턴을 동시에 제조하여 가로 방향으로 복수의 양방향 도전성 핀이 형성된 양방향 도전성 패턴 모듈을 제조하고, 이들을 깊이 방향으로 배치시킴으로서 가로 방향과 깊이 방향으로 복수개의 도전 패턴이 형성된 반도체 테스트용 소켓의 제조도 가능하게 된다.In addition, a semiconductor test in which a plurality of conductive patterns are formed in a horizontal direction and a depth direction by manufacturing a bidirectional conductive pattern module having a plurality of bidirectional conductive pins formed in a horizontal direction by simultaneously manufacturing a plurality of patterns in the horizontal direction and placing them in a depth direction. It is also possible to manufacture a socket for use.
도 1 내지 도 3은 종래의 포고-핀(Pogo-pin) 타입의 반도체 테스트 소켓을 설명하기 위한 도면이고,1 to 3 are diagrams for explaining a conventional Pogo-pin type semiconductor test socket,
도 4는 본 발명의 일 실시예에 따른 양방향 도전성 핀의 형성 원리를 설명하기 위한 도면이고,4 is a view for explaining the principle of formation of the bidirectional conductive pin according to an embodiment of the present invention,
도 5 및 도 6은 본 발명에 따른 양방향 도전성 핀 및 양방향 도전성 패턴 모듈의 제조 방법을 설명하기 위한 도면이고, 5 and 6 are views for explaining a manufacturing method of a bidirectional conductive pin and a bidirectional conductive pattern module according to the present invention,
도 7 내지 도 11은 본 발명에 따른 베이스 패턴의 다양한 예를 나타낸 도면이고,7 to 11 are views showing various examples of the base pattern according to the present invention,
도 12 및 도 13은 본 발명의 다른 실시예에 따른 양방향 도전성 핀의 예를 나타낸 도면이다.12 and 13 illustrate an example of a bidirectional conductive pin according to another embodiment of the present invention.
본 발명은 양방향 도전성 핀, 양방향 도전성 패턴 모듈 및 그 제조방법에 관한 것이다. 본 발명에 따른 양방향 도전성 핀은 도전성을 갖는 박판이 상하 방향을 축으로 태엽 형태로 말려 형성되어 상부 방향에서의 접촉시 탄성적으로 지지하는 상부 접촉부와, 도전성을 갖는 박판이 상기 상하 방향을 축으로 태엽 형태로 말려 형성되어 하부 방향에서의 접촉시 탄성적으로 지지하는 하부 접촉부와, 상기 상부 접촉부와 상기 하부 접촉부를 전기적으로 연결하는 적어도 하나의 연결부를 포함하는 것을 특징으로 한다.The present invention relates to a bidirectional conductive pin, a bidirectional conductive pattern module and a method of manufacturing the same. The bidirectional conductive pin according to the present invention is formed by winding a thin conductive plate in an up-and-down direction in an axial direction, and an upper contact part elastically supporting the contact in the upper direction, and a thin conductive plate is in the vertical direction. It is characterized in that it comprises a lower contact portion which is formed in a winding form and elastically supports when contacting in the lower direction, and at least one connecting portion electrically connecting the upper contact portion and the lower contact portion.
이하에서는 첨부된 도면을 참조하여 본 발명에 따른 실시예들을 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention;
도 4는 본 발명에 따른 양방향 도전성 핀(10)의 형성 원리를 설명하기 위한 도면이다. 도 4의 (b)를 참조하여 설명하면, 본 발명에 따른 양방향 도전성 핀(10)은 상부 접촉부(11), 하부 접촉부(12) 및 연결부(13)를 포함한다. 또한, 본 발명에 따른 양방향 도전성 핀(10)은 핀 본체(14)를 더 포함할 수 있다.4 is a view for explaining the principle of formation of the bidirectional conductive pin 10 according to the present invention. Referring to FIG. 4B, the bidirectional conductive pin 10 according to the present invention includes an upper contact 11, a lower contact 12, and a connection 13. In addition, the bidirectional conductive pin 10 according to the present invention may further include a pin body 14.
본 발명에 따른 양방향 도전성 핀(10), 도 4의 (a)에 도시된 바와 같이, 도전성을 갖는 박판, 예를 들어 금속 박판의 패터닝을 통해 형성되는 베이스 패턴(100a)을 이용하여 제작된다. 베이스 패턴(100a)은, 도 4의 (a)에 도시된 바와 같이, 상부 접촉 패턴(11a), 하부 접촉 패턴(12a), 그리고 이들을 연결하는 적어도 하나의 연결 패턴(13a)을 포함한다.Bi-directional conductive pin 10 according to the present invention, as shown in Fig. 4 (a), is produced using a base pattern 100a formed through the patterning of a thin plate having conductivity, for example, a metal thin plate. As illustrated in FIG. 4A, the base pattern 100a includes an upper contact pattern 11a, a lower contact pattern 12a, and at least one connection pattern 13a connecting them.
이와 같은 베이스 패턴(100a)의 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)을 상하 방향을 축(Axis, 이하 동일)으로 하여 2회 이상 말라 도 4의 (c)에 도시된 바와 같이 태엽 형태로 제작하게 되면, 본 발명에 따른 양방향 도전성 핀(10)의 상부 접촉부(11)와 하부 접촉부(12)가 형성 가능하게 된다.The upper contact pattern 11a and the lower contact pattern 12a of the base pattern 100a are dried two or more times with the axis (Axis, hereinafter equal) up and down, as shown in FIG. 4C. When manufactured in the form, the upper contact portion 11 and the lower contact portion 12 of the bidirectional conductive pin 10 according to the present invention can be formed.
여기서, 본 발명에서는 도 4의 (a)에 도시된 바와 같이, 연결 패턴(13a)이 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a) 사이에서 대각선 방향을 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)을 연결하도록 형성하게 되면, 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)이 태엽 형태로 말라 상부 접촉부(11)와 하부 접촉부(12)를 형성할 때 함께 말려, 도 4의 (b)에 도시된 바와 같은 꼬인 형상을 갖게 된다.Here, in the present invention, as shown in Fig. 4 (a), the connection pattern 13a is in the diagonal direction between the upper contact pattern 11a and the lower contact pattern 12a and the lower contact with the upper contact pattern 11a. When the pattern 12a is formed to be connected to each other, the upper contact pattern 11a and the lower contact pattern 12a are rolled together to form the upper contact portion 11 and the lower contact portion 12 in a winding shape, and thus It has a twisted shape as shown in (b).
상기와 같은 태엽 형태의 상부 접촉부(11)에 반도체 소자의 단자, 예를 들어 볼(Ball)이 상부 방향에서 하부 방향으로 접촉하게 되면, 도 4의 (c)에 도시된 바와 같이, 태엽 내부의 ① 번 부분이 볼에 먼저 접촉하여 하부 방향으로 하강하게 되고, ② 번 및 ③ 번 순으로 순차적으로 접촉하게 됨으로써, 탄성적인 접촉과, 접촉 제거 후 원상태로 복원하는 복원력을 갖게 된다. 즉, 상부 방향에서의 접촉시 탄성적으로 지지하게 된다.When the terminal of the semiconductor device, for example, the ball, contacts the upper contact portion 11 having the spring shape as described above in the downward direction, as shown in (c) of FIG. ① part first comes into contact with the ball and descends in the downward direction, and ② is sequentially contacted in the order of # and ③, thereby having elastic contact and restoring force to restore to the original state after contact removal. That is, it is elastically supported during contact in the upper direction.
마찬가지로, 하부 접촉부(12)에 검사회로기판의 단자가 하부 방향에서 상부 방향으로 접촉하게 되면, 태엽 형태의 내측 부분부터 외측 부분으로 순차적으로 접촉하게 되어 하부 방향에서의 접촉을 탄성적으로 지지하게 된다.Similarly, when the terminal of the test circuit board contacts the lower contact portion 12 from the lower direction to the upper direction, the terminal of the inspection circuit board is sequentially contacted from the inner portion to the outer portion of the winding shape to elastically support the contact in the lower direction. .
그리고, 연결부(13)는 상부 접촉부(11)와 하부 접촉부(12)를 전기적으로 연결시킴으로써, 상부 접촉부(11), 연결부(13) 및 하부 접촉부(12)가 상하 방향으로 하나의 도전 라인을 형성하게 됨으로써, 반도체 소자의 검사에 사용 가능하게 된다.In addition, the connecting portion 13 electrically connects the upper contact portion 11 and the lower contact portion 12, so that the upper contact portion 11, the connecting portion 13, and the lower contact portion 12 form one conductive line in the vertical direction. It becomes possible to use for the inspection of a semiconductor element by doing so.
여기서, 핀 본체(14)는 상부 접촉부(11)와 하부 접촉부(12) 사이에서 연결부(13)가 내부에 수용되도록 형성되어 상부 접촉부(11)와 하부 접촉부(12)를 지지한다. 여기서, 핀 본체(14)는 탄성을 갖는 절연성 재질, 예를 들어 실리콘 재질로 마련되는 것을 예로 한다.Here, the pin body 14 is formed between the upper contact portion 11 and the lower contact portion 12 so that the connecting portion 13 is accommodated therein to support the upper contact portion 11 and the lower contact portion 12. Here, for example, the pin body 14 is made of an insulating material having elasticity, for example, a silicon material.
이하에서는, 도 5 및 도 6을 참조하여 본 발명에 따른 양방향 도전성 패턴 모듈(100) 및 양방향 도전성 핀(10)의 제조방법에 대해 상세히 설명한다.Hereinafter, a method of manufacturing the bidirectional conductive pattern module 100 and the bidirectional conductive pin 10 according to the present invention will be described in detail with reference to FIGS. 5 and 6.
도 5 및 도 6을 참조하여 설명하면, 먼저, 금속 박판을 준비하고, 금속 박판을 패터닝 처리하여, 도 5의 (a)에 도시된 바와 같은 베이스 패턴(100a)을 형성한다. 여기서, 금속 박판은 도전성을 갖는 재질로 마련될 수 있으나, 후술할 도금 과정을 통해 도전성이 형성될 수 있는 바, 금속 박판의 도전성은 필수가 아닐 수 있다. 금속 박판의 재질은 구리 또는 구리 합금, 예를 들어 BeCu로 형성될 수 있다. 또한, 본 발명에서는 금속 박판의 패터닝 방법으로 에칭 방법이나 스탬핑 방법이 적용되는 것을 예로 한다.Referring to FIGS. 5 and 6, first, a thin metal plate is prepared and the metal thin plate is patterned to form a base pattern 100a as shown in FIG. 5A. Here, the metal thin plate may be provided with a material having conductivity, but the conductivity may be formed through a plating process to be described later, and the conductivity of the metal thin plate may not be essential. The material of the metal sheet may be formed of copper or a copper alloy, for example BeCu. In the present invention, an etching method or a stamping method is applied as an example of the metal thin plate patterning method.
도 5의 (a)를 참조하여 설명하면, 금속 박판의 패터닝 처리를 통해 형성되는 베이스 패턴(100a)은 복수의 상부 접촉 패턴(11a), 복수의 하부 접촉 패턴(12a), 그리고 상호 대응하는 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)을 연결하는 연결 패턴(13a)을 포함한다. 여기서, 하나의 상부 접촉 패턴(11a), 하부 접촉 패턴(12a) 및 이를 연결하는 연결 패턴(13a)의 구성은 도 4의 (a)에 도시된 바와 같으며, 도 5의 (a)에 도시된 실시예에서는 연결 패턴(13a)이 가로 방향으로 휜 형상을 갖는 것을 예로 하고 있다.Referring to FIG. 5A, the base pattern 100a formed through the patterning process of the thin metal plate may include a plurality of upper contact patterns 11a, a plurality of lower contact patterns 12a, and corresponding upper portions. The connection pattern 13a connects the contact pattern 11a and the lower contact pattern 12a. Here, the configuration of one upper contact pattern 11a, lower contact pattern 12a, and a connection pattern 13a connecting the same is as shown in FIG. 4A, and is shown in FIG. 5A. In the illustrated embodiment, the connection pattern 13a has a shape that is curved in the horizontal direction.
복수의 상부 접촉 패턴(11a)은 가로 방향으로 상호 이격되도록 형성된다. 그리고, 복수의 하부 접촉 패턴(12a)은 상부 접촉 패턴(11a)으로부터 상하 방향으로 이격된 상태에서 상호간에 가로 방향으로 이격되도록 형성된다. The plurality of upper contact patterns 11a are formed to be spaced apart from each other in the horizontal direction. The plurality of lower contact patterns 12a are formed to be spaced apart from each other in the horizontal direction while being spaced apart from the upper contact pattern 11a in the vertical direction.
여기서, 베이스 패턴(100a)은 복수의 상부 접촉 패턴(11a), 복수의 하부 접촉 패턴(12a), 그리고 연결 패턴(13a)을 이용한 이후의 작업이 동시에 이루어질 수 있도록 각각의 상부 접촉 패턴(11a)과 상부 연결 패턴(123)으로 연결되는 상부 지지 패턴(121)과, 각각의 하부 접촉 패턴(12a)과 하부 연결 패턴(124)으로 연결되는 하부 지지 패턴(122)을 포함할 수 있다.Here, the base pattern 100a may be configured to simultaneously perform subsequent operations using the plurality of upper contact patterns 11a, the plurality of lower contact patterns 12a, and the connection pattern 13a, respectively. And an upper support pattern 121 connected to the upper connection pattern 123, and a lower support pattern 122 connected to each of the lower contact patterns 12a and the lower connection pattern 124.
상기와 같이 베이스 패턴(100a)의 제조가 완료되면, 베이스 패턴(100a)의 도전성 향상을 위해, 도금 과정이 진행된다. 본 발명에서는 니켈 도금과 금 도금을 순차적으로 진행하는 것을 예로 한다.When the manufacturing of the base pattern 100a is completed as described above, the plating process is performed to improve the conductivity of the base pattern 100a. In the present invention, the nickel plating and gold plating are sequentially performed.
도금 과정이 완료되면, 도 4의 (c)에 도시된 바와 같이, 각각의 상부 접촉 패턴(11a)과 각각의 하부 접촉 패턴(12a)이 태엽 형상을 갖도록 상하 방향을 축으로 말아, 도 5의 (b)에 도시된 바와 같이 각각 상부 접촉부(11), 하부 접촉부(12) 및 연결부(13)를 형성한다. 여기서, 연결부(13)는 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)이 태엽 형태로 말릴 때 연결 패턴(13a)이 함께 말려 꼬인 형상으로 형성된다.When the plating process is completed, as shown in (c) of FIG. 4, the upper and lower directions are rolled around the axis such that each of the upper contact patterns 11a and each of the lower contact patterns 12a have a winding shape. As shown in (b), the upper contact portion 11, the lower contact portion 12 and the connecting portion 13 are formed, respectively. Here, when the upper contact pattern 11a and the lower contact pattern 12a are wound in a winding shape, the connection part 13 is formed in a twisted shape in which the connection pattern 13a is rolled together.
여기서, 상호 대응하는 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)은 상하 방향으로 동일 축을 중심으로 말려 상하 방향으로 대응하는 위치에 상부 접촉부(11) 및 하부 접촉부(12)가 형성 가능하게 된다.In this case, the upper contact pattern 11a and the lower contact pattern 12a corresponding to each other may be rolled about the same axis in the vertical direction to form the upper contact portion 11 and the lower contact portion 12 at positions corresponding to the vertical direction. .
상기와 같이, 상부 접촉부(11), 하부 접촉부(12) 및 연결부(13)가 형성되면, 도 5의 (c)에 도시된 바와 같이, 각각의 상부 접촉부(11)의 상부 표면과, 각각의 하부 접촉부(12)의 하부 표면이 상부 방향 및 하부 방향으로 노출된 상태가 되도록 절연성 본체(110)를 형성한다. 도 5의 (c)에서는 상부 접촉부(11)의 하부측 일부와 하부 접촉부(12)의 상부측 일부가 커버되는 정도로 연결부(13)가 내부에 수용될 수 있도록 절연성 본체(110)가 형성되는 것을 예로 한다.As described above, when the upper contact portion 11, the lower contact portion 12 and the connecting portion 13 is formed, as shown in (c) of FIG. 5, the upper surface of each upper contact portion 11, and The insulating body 110 is formed such that the lower surface of the lower contact portion 12 is exposed in the upper direction and the lower direction. In FIG. 5C, the insulating main body 110 is formed such that the connecting portion 13 can be accommodated therein to the extent that the lower portion of the upper contact portion 11 and the upper portion of the lower contact portion 12 are covered. Yes.
일 예로, 도 5의 (b)에 도시된 베이스 패턴(100a)을 금형에 설치한 후, 액상의 실리콘을 주입한 후 경화시켜 절연성 본체(110)를 형성할 수 있다. 이를 통해, 상부 접촉부(11)의 상부 표면과 하부 접촉부(12)의 하부 표면은 절연성 본체(110)의 외부로 노출된 상태가 되고, 상부 접촉부(11)의 나머지 부분, 하부 접촉부(12)의 나머지 부분, 그리고 연결부(13)는 절연성 본체(110)의 내부에 위치하게 된다.For example, the base pattern 100a illustrated in FIG. 5B may be installed in a mold, and then the liquid silicone may be injected and then cured to form the insulating body 110. Through this, the upper surface of the upper contact portion 11 and the lower surface of the lower contact portion 12 are exposed to the outside of the insulating body 110, the remaining portion of the upper contact portion 11, of the lower contact portion 12 The remaining part and the connection part 13 are positioned inside the insulating body 110.
상기와 같은 과정을 통해, 절연성 본체(110)가 완성되면, 도 5의 (c)에 도시된 절취선(C1, C2)을 따라 레이저 커팅 등의 방법을 통해 상부 연결 패턴(123)과 하부 연결 패턴(124)을 절단하게 되면, 도 6의 (a)에 도시된 바와 같은 양방향 도전성 패턴 모듈(100)이 제조 가능하게 된다.Through the above process, when the insulating main body 110 is completed, the upper connection pattern 123 and the lower connection pattern through laser cutting or the like along the cutting lines C1 and C2 shown in FIG. When cutting 124, the bidirectional conductive pattern module 100 as shown in FIG. 6A can be manufactured.
도 6의 (a)을 참조하여 설명하면, 양방향 도전성 패턴 모듈(100)(100)은 절연성 본체(110)(110)의 내부에 가로 방향으로 상호 이격된 상태로 복수의 양방향 도전성 핀(10)이 형성된다. 이 때. 하니씩의 상부 접촉부(11), 하부 접촉부(12), 그리고 연결부(13)가 하나의 양방향 도전성 핀(10)을 구성하게 되고, 상하 방향으로 하나의 도전 라인을 형성하게 된다.Referring to FIG. 6A, the bidirectional conductive pattern modules 100 and 100 are spaced apart from each other in the transverse direction inside the insulating bodies 110 and 110, respectively. Is formed. At this time. The upper contact portion 11, the lower contact portion 12, and the connection portion 13 of the honeycomb constitute one bidirectional conductive pin 10 and form one conductive line in the vertical direction.
그리고, 복수의 양방향 도전성 패턴 모듈(100)을 깊이 방향으로 배열시키게 되면, 가로 방향과 깊이 방향으로 복수의 도전 패턴을 갖는 반도체 테스트용 소켓을 구성할 수 있게 된다.When the plurality of bidirectional conductive pattern modules 100 are arranged in the depth direction, the semiconductor test socket having the plurality of conductive patterns in the horizontal direction and the depth direction can be configured.
또한, 도 6의 (a)에 도시된 절취선(C3)을 따라 레이저 커팅 등의 방법으로 절단하게 되면, 도 6의 (b)에 도시된 바와 같은 하나의 양방향 도전성 핀(10)의 제조가 가능하게 되는데, 절연성 본체(110) 중 상부 접촉부(11)와 하부 접촉부(12) 사이에 남은 부분이 양방향 도전성 핀(10)의 핀 본체(14)를 형성하게 된다. 이와 같이 제작된 하나의 양방향 도전성 핀(10)은 기존의 포고 핀을 대체할 수 있게 된다. In addition, by cutting along a cutting line C3 shown in FIG. 6A by laser cutting or the like, one bidirectional conductive pin 10 as shown in FIG. 6B can be manufactured. The remaining portion between the upper contact portion 11 and the lower contact portion 12 of the insulating body 110 forms the pin body 14 of the bidirectional conductive pin 10. One bidirectional conductive pin 10 manufactured as described above may replace the existing pogo pin.
도 7 내지 도 11은 다양한 형태의 베이스 패턴(100a)의 예를 나타낸 도면이다. 본 발명에 따른 기술적 사상은 상술한 바와 같으며, 도 7 내지 도 11에 도시된 베이스 패턴(100a)의 다양한 변형 예와 다른 변형 예도 본 발명의 기술적 사상에 포함된다. 즉, 당업자라면 본 발명에서 예시한 실시예들 외에 본 발명의 기술적 사상의 범위 내에서 다양한 변형 예에 따라 베이스 패턴(100a)의 제조가 가능할 것이다.7 to 11 illustrate examples of various types of base patterns 100a. The technical idea according to the present invention is as described above, and various modifications and other modifications of the base pattern 100a illustrated in FIGS. 7 to 11 are also included in the technical idea of the present invention. That is, those skilled in the art will be able to manufacture the base pattern 100a according to various modifications within the scope of the technical idea of the present invention in addition to the embodiments illustrated in the present invention.
일 예로, 도 10에는 상부 접촉 패턴(11a)과 하부 접촉 패턴(12a)의 형상에 따라 상부 접촉부(11) 및 하부 접촉부(12)의 형상이 바뀌는 예들을 도시하고 있다. 또한, 도 11의 (a)에 도시된 예에서는 상부 접촉 패턴(11a)으로부터 하부 측으로 내부 지지 패턴(15a)을 형성하는 경우, 절연성 본체(110) 또는 핀 본체(14) 내부에, 도 11의 (b)에 도시된 바와 같은 내부 지지부(15)가 형성되는 것을 예로 하고 있다. 이 때, 내부 지지 패턴(15a)은 금속 박판의 패터닝을 통해 상술한 베이스 패턴(100a)의 형성 과장에서 금속 박판의 패터닝 과정에서 함께 형성될 수 있다.For example, FIG. 10 illustrates an example in which the upper contact portion 11 and the lower contact portion 12 are changed in shape according to the shape of the upper contact pattern 11a and the lower contact pattern 12a. In addition, in the example shown in FIG. 11A, when the inner support pattern 15a is formed from the upper contact pattern 11a to the lower side, the insulating main body 110 or the pin body 14 is formed in FIG. 11. As an example, the inner support 15 is formed as shown in (b). In this case, the inner support pattern 15a may be formed together in the patterning process of the metal sheet in the exaggeration of the formation of the base pattern 100a through the patterning of the metal sheet.
이하에서는, 도 12를 참조하여 본 발명의 다른 실시예에 따른 양방향 도전성 핀(10')에 대해 설명한다.Hereinafter, a bidirectional conductive pin 10 ′ according to another embodiment of the present invention will be described with reference to FIG. 12.
도 12를 참조하여 설명하면, 본 발명에 따른 양방향 도전성 핀(10')은 상부 접촉부(11'), 하부 접촉부(12') 및 연결부(13')를 포함한다. 또한, 전술한 실시예에서와 같이 양방향 도전성 핀(10')은 내부 지지부(15') 및 핀 본체(14)를 포함할 수 있다.Referring to FIG. 12, the bidirectional conductive pin 10 ′ according to the present invention includes an upper contact 11 ′, a lower contact 12 ′ and a connection 13 ′. In addition, as in the above-described embodiment, the bidirectional conductive pin 10 ′ may include an internal support 15 ′ and a pin body 14.
여기서, 도 12에 도시된 실시예에서는, 도 12의 (a)에 도시된 바와 같이, 상부 접촉 패턴(11a')이 가로 방향으로 단차지게 형성되는 것을 예로 한다. 이에 따라, 상부 접촉 패턴(11a')이 상하 방향을 축으로 태엽 형태로 말려 상부 접촉부(11')를 형성하게 되면, 도 12의 (b)에 도시된 바와 같이, 상부 접촉부(11')의 내측 말린 부분이 외측 말린 부분보다 상부 방향으로 돌출된다. 즉, 도 12의 (b)에 도시된 바와 같이, 상부 접촉부(11')가 반경 방향 외측으로 단차지게 형성된다.Here, in the embodiment shown in FIG. 12, as shown in FIG. 12A, the upper contact pattern 11a ′ is formed to be stepped in the horizontal direction. Accordingly, when the upper contact pattern 11a 'is rolled up in an up-and-down direction in a spring shape to form the upper contact portion 11', as shown in FIG. 12 (b), the upper contact portion 11 ' The inner curled portion projects upwards from the outer curled portion. That is, as shown in FIG. 12B, the upper contact portion 11 ′ is stepped radially outward.
이에 따라, 상부 접촉부(11')의 상부 표면으로 반도체 소자의 단자가 접촉하게 되면, 내측 말린 부분이 먼저 접촉하여 하부 방향으로 이동하게 되고, 추가적으로 외측 말린 부분이 접촉되어 보다 안정적인 접촉과 탄성적인 접촉이 가능하게 된다.Accordingly, when the terminals of the semiconductor element come into contact with the upper surface of the upper contact portion 11 ′, the inner curled portion first contacts and moves downward, and the outer curled portion further contacts to make more stable contact and elastic contact. This becomes possible.
도 12에 도시된 실시예에서는 상부 접촉 패턴(11a')이 가로 방향으로 단차지게 형성되는 것을 예로 하고 있으나, 도 10의 (b), (c), (d)에 도시된 실시예에서와 같이 상부 접촉 패턴(11a')이 상하 방향으로의 폭이 상이하게 형성됨으로써, 상부 접촉부(11')가 내부 측으로 갈수록 상부 방향으로 돌출된 형상을 갖도록 형성할 수 있다.In the embodiment illustrated in FIG. 12, the upper contact pattern 11a ′ is formed to be stepped in the horizontal direction, but as in the embodiment illustrated in FIGS. 10B, 10C, and 10D. Since the upper contact pattern 11a ′ is formed to have a different width in the vertical direction, the upper contact portion 11 ′ may be formed to have a shape protruding upward toward the inner side.
마찬가지로, 도 12의 (a)에 도시된 바와 같이, 하부 접촉 패턴(12a')이 가로 방향으로 단차지게 형성될 수 있다. 이에 따라, 하부 접촉 패턴(12a')이 상하 방향을 축으로 태엽 형태로 말려 하부 접촉부(12')를 형성하게 되면, 도 12의 (b)에 도시된 바와 같이, 하부 접촉부(12')의 내측 말린 부분이 외측 말린 부분보다 하부 방향으로 돌출된다. 즉, 도 12의 (b)에 도시된 바와 같이, 하부 접촉부(12')가 반경 방향 외측으로 단차지게 형성된다.Similarly, as shown in FIG. 12A, the lower contact pattern 12a ′ may be stepped in the horizontal direction. Accordingly, when the lower contact pattern 12a 'is rolled up in an up-and-down direction to form a lower contact part 12', as shown in FIG. 12 (b), the lower contact part 12 ' The inner curled portion projects outward from the outer curled portion. That is, as shown in FIG. 12B, the lower contact portion 12 ′ is stepped radially outward.
이에 따라, 하부 접촉부(12')의 하부 표면으로 검사회로기판의 단자가 접촉하게 되면, 내측 말린 부분이 먼저 접촉하여 하부 방향으로 이동하게 되고, 추가적으로 외측 말린 부분이 접촉되어 보다 안정적인 접촉과 탄성적인 접촉이 가능하게 된다.Accordingly, when the terminals of the test circuit board come into contact with the lower surface of the lower contact portion 12 ', the inner curled portion first contacts and moves downward, and the outer curled portion further contacts to make more stable contact and elasticity. Contact is possible.
도 12에 도시된 실시예에서는 하부 접촉 패턴(12a')이 가로 방향으로 단차지게 형성되는 것을 예로 하고 있으나, 도 10의 (b), (c), (d)에 도시된 실시예에서와 같이 하부 접촉 패턴(12a')이 상하 방향으로의 폭이 상이하게 형성됨으로써, 하부 접촉부(12')가 내부 측으로 갈수록 하부 방향으로 돌출된 형상을 갖도록 형성할 수 있다.In the embodiment illustrated in FIG. 12, the lower contact pattern 12a ′ is formed to be stepped in the horizontal direction, but as in the embodiment illustrated in FIGS. 10B, 10B, and 10D. Since the lower contact pattern 12a ′ is formed to have a different width in the vertical direction, the lower contact part 12 ′ may be formed to have a shape protruding downward toward the inner side.
이하에서는, 도 13을 참조하여 본 발명의 다른 실시예에 따른 양방향 도전성 핀(10'')에 대해 설명한다.Hereinafter, the bidirectional conductive pin 10 ″ according to another exemplary embodiment of the present invention will be described with reference to FIG. 13.
도 13을 참조하여 설명하면, 본 발명에 따른 양방향 도전성 핀(10'')은 상부 접촉부(11''), 하부 접촉부(12'') 및 연결부(13'')를 포함한다. 도 13에 도시된 실시예에서는 내부 지지부(15')가 마련되지 않은 예를 나타내고 있다.Referring to FIG. 13, the bidirectional conductive pin 10 ″ according to the present invention includes an upper contact 11 ″, a lower contact 12 ″ and a connection 13 ″. 13 illustrates an example in which the inner support 15 'is not provided.
또한, 도 13에 도시된 실시예에서는 핀 본체(14)가 형성되지 않고, 연결부(13'')가 상부 접촉부(11'')와 하부 접촉부(12'') 사이에서 상부 접촉부(11'')와 하부 접촉부(12'')를 지지하는 것을 예로 하고 있다. 이를 위해, 도 13의 (a)에 도시된 바와 같이, 연결 패턴(13a'')이 가로 방향으로 소정 폭을 갖도록 형성되는데, 이를 통해 상부 접촉 패턴(11a'') 및 하부 접촉 패턴(12a'')이 상하 방향을 축으로 태엽 형태로 말릴 때 연결 패턴(13a'')도 함께 말리는데, 이 때 연결 패턴(13a'')에 의해 형성되는 연결부(13'')는, 도 13의 (b)에 도시된 바와 같이, 원통 형상을 갖게 되어, 상부 접촉부(11'')와 하부 접촉부(12'')를 상하 방향으로 지지하게 된다.In addition, in the embodiment shown in FIG. 13, the pin body 14 is not formed, and the connecting portion 13 ″ is the upper contact 11 ″ between the upper contact 11 ″ and the lower contact 12 ″. ) And the lower contact 12 '' are taken as an example. To this end, as shown in FIG. 13A, the connection pattern 13a ″ is formed to have a predetermined width in the horizontal direction, through which the upper contact pattern 11a ″ and the lower contact pattern 12a ′ are formed. When the ') is rolled up in an up-and-down direction in a winding shape, the connection pattern 13a' 'is also dried together, and the connection part 13' 'formed by the connection pattern 13a' 'is illustrated in FIG. As shown in b), it has a cylindrical shape to support the upper contact portion 11 '' and the lower contact portion 12 '' in the vertical direction.
이 때, 연결 패턴(13a'')의 가로 방향으로의 폭은 연결 패턴(13a'')에 의해 형성되는 연결부(13'')가 원통 형상을 갖거나, 원통 중 일부분만을 형성하도록 마련되는 정도의 폭으로 형성될 수 있다.At this time, the width in the horizontal direction of the connection pattern 13a '' is such that the connection portion 13 '' formed by the connection pattern 13a '' has a cylindrical shape or is provided so as to form only a part of the cylinder. It can be formed in the width of.
비록 본 발명의 몇몇 실시예들이 도시되고 설명되었지만, 본 발명이 속하는 기술분야의 통상의 지식을 가진 당업자라면 본 발명의 원칙이나 정신에서 벗어나지 않으면서 본 실시예를 변형할 수 있음을 알 수 있을 것이다. 발명의 범위는 첨부된 청구항과 그 균등물에 의해 정해질 것이다.Although some embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that modifications may be made to the embodiment without departing from the spirit or spirit of the invention. . It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.
[부호의 설명][Description of the code]
10 : 양방향 도전성 핀10: bidirectional conductive pin
11 : 상부 접촉부 11a : 상부 접촉 패턴11: upper contact 11a: upper contact pattern
12 : 하부 접촉부 12a : 하부 접촉 패턴12: lower contact portion 12a: lower contact pattern
13 : 연결부 13a : 연결 패턴13 connection part 13a: connection pattern
14 : 핀 본체 15 : 내부 지지부14: pin body 15: internal support
15a : 내부 지지 패턴 100 : 양방향 도전성 패턴 모듈15a: internal support pattern 100: bidirectional conductive pattern module
110 : 절연성 본체 100a : 베이스 패턴110: insulating body 100a: base pattern
121 : 상부 지지 패턴 122 : 하부 지지 패턴121: upper support pattern 122: lower support pattern
123 : 상부 연결 패턴 124 : 하부 연결 패턴123: upper connection pattern 124: lower connection pattern
본 발명은 반도체 소자, 인쇄회로기판, LCD 디스플레이 등의 제조 과정에서 전기적 성능의 양불 검사나 번-인(Burn-In) 테스트 과정에 적용될 수 있다.The present invention can be applied to the inspection of the electrical performance or burn-in test in the manufacturing process of semiconductor devices, printed circuit boards, LCD displays and the like.

Claims (22)

  1. 양방향 도전성 핀에 있어서,In the bidirectional conductive pin,
    도전성을 갖는 박판이 상하 방향을 축으로 태엽 형태로 말려 형성되어 상부 방향에서의 접촉시 탄성적으로 지지하는 상부 접촉부와,An upper contact portion having a conductive thin plate formed by winding in an up-and-down direction in an axial direction and elastically supporting the contact in the upper direction;
    도전성을 갖는 박판이 상기 상하 방향을 축으로 태엽 형태로 말려 형성되어 하부 방향에서의 접촉시 탄성적으로 지지하는 하부 접촉부와,A lower contact portion which is electrically conductive and is formed in a winding shape in an axial direction with respect to the vertical direction to support elastically upon contact in a lower direction;
    상기 상부 접촉부와 상기 하부 접촉부를 전기적으로 연결하는 적어도 하나의 연결부를 포함하는 것을 특징으로 하는 양방향 도전성 핀.And at least one connecting portion electrically connecting the upper contact portion and the lower contact portion.
  2. 제1항에 있어서,The method of claim 1,
    상기 상부 접촉부, 상기 하부 접촉부 및 상기 연결부는 도전성을 갖는 박판의 패터닝을 통해 형성된 베이스 패턴이 상기 상하 방향을 축으로 태엽 형태로 말려 함께 형성되는 것을 특징으로 하는 양방향 도전성 핀.The upper contact portion, the lower contact portion and the connecting portion is a bidirectional conductive pin, characterized in that the base pattern formed through the patterning of the conductive thin plate is rolled together in a winding form along the vertical direction.
  3. 제1항에 있어서,The method of claim 1,
    상기 상부 접촉부와 상기 하부 접촉부 사이에 상기 연결부가 내부에 수용되도록 형성되는 탄성을 갖는 절연성 재질의 핀 본체를 더 포함하는 것을 특징으로 하는 양방향 도전성 핀.And a pin body of an insulating material having an elasticity formed between the upper contact portion and the lower contact portion so that the connection portion is received therein.
  4. 제1항에 있어서,The method of claim 1,
    상기 상부 접촉부로부터 하부로 연장되되 하부 말단이 상기 하부 접촉부와 소정 간격 이격되도록 형성된 적어도 하나의 내부 지지부를 더 포함하는 것을 특징으로 하는 양방향 도전성 핀.And at least one inner support portion extending downward from the upper contact portion, the lower end being spaced apart from the lower contact portion by a predetermined distance.
  5. 제1항에 있어서,The method of claim 1,
    상기 상부 접촉부의 내측 말린 부분은 외측 말린 부분보다 상부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성되는 것을 특징으로 하는 양방향 도전성 핀.The inner curled portion of the upper contact portion protrudes in the upper direction than the outer curled portion is bidirectionally conductive pins, characterized in that formed stepped outward in the radial direction.
  6. 제1항에 있어서,The method of claim 1,
    상기 하부 접촉부의 내측 말린 부분은 외측 말린 부분보다 하부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성되는 것을 특징으로 하는 양방향 도전성 핀.The inner curled portion of the lower contact portion protrudes in a lower direction than the outer curled portion is bidirectional conductive pins, characterized in that formed stepped outward in the radial direction.
  7. 제1항에 있어서,The method of claim 1,
    상기 연결부는 가로 방향으로 소정 폭을 갖도록 형성되어 상기 상부 접촉부와 상기 하부 접촉부 사이에서 상기 상부 접촉부와 상기 하부 접촉부를 상기 상하 방향으로 지지하는 것을 특징으로 하는 양방향 도전성 핀.And the connection part is formed to have a predetermined width in a horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  8. 양방향 도전성 패턴 모듈에 있어서,In the bidirectional conductive pattern module,
    절연성 본체와,With an insulating body,
    가로 방향으로 상호 이격된 상태로 상기 절연성 본체 내부에 배치되고, 각각의 상부 및 하부가 상기 절연성 본체의 상부 표면 및 하부 표면에 노출되는 복수의 양방향 도전성 핀을 포함하며;A plurality of bidirectional conductive pins disposed inside the insulated body spaced apart from each other in a horizontal direction, each upper and lower portion being exposed to the upper and lower surfaces of the insulated body;
    각각의 상기 양방향 도전성 핀은Each of the bidirectional conductive pins
    도전성을 갖는 박판이 상하 방향을 축으로 태엽 형태로 말려 형성되어 상부 방향에서의 접촉시 탄성적으로 지지하는 상부 접촉부와,An upper contact portion having a conductive thin plate formed by winding in an up-and-down direction in an axial direction and elastically supporting the contact in the upper direction;
    도전성을 갖는 박판이 상기 상하 방향을 축으로 태엽 형태로 말려 형성되어 하부 방향에서의 접촉시 탄성적으로 지지하는 하부 접촉부와,A lower contact portion which is electrically conductive and is formed in a winding shape in an axial direction with respect to the vertical direction to support elastically upon contact in a lower direction;
    상기 상부 접촉부와 상기 하부 접촉부를 전기적으로 연결하는 적어도 하나의 연결부를 포함하는 것을 특징으로 하는 양방향 도전성 패턴 모듈.And at least one connection part electrically connecting the upper contact part and the lower contact part.
  9. 제8항에 있어서,The method of claim 8,
    상기 상부 접촉부, 상기 하부 접촉부 및 상기 연결부는 도전성을 갖는 박판의 패터닝을 통해 형성된 베이스 패턴이 상기 상하 방향을 축으로 태엽 형태로 말려 함께 형성되는 것을 특징으로 하는 양방향 도전성 패턴 모듈.The upper contact portion, the lower contact portion and the connecting portion is a bidirectional conductive pattern module, characterized in that the base pattern formed through the patterning of the conductive thin plate is rolled together in a winding shape in the vertical direction.
  10. 제8항에 있어서,The method of claim 8,
    상기 상부 접촉부로부터 하부로 연장되되 하부 말단이 상기 하부 접촉부와 소정 간격 이격되도록 형성된 적어도 하나의 내부 지지부를 더 포함하는 것을 특징으로 하는 양방향 도전성 패턴 모듈.And at least one inner support part extending downward from the upper contact part, the lower end being spaced apart from the lower contact part by a predetermined distance.
  11. 제8항에 있어서,The method of claim 8,
    상기 상부 접촉부의 내측 말린 부분은 외측 말린 부분보다 상부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성되는 것을 특징으로 하는 양방향 도전성 패턴 모듈.The inner curled portion of the upper contact portion protrudes in the upper direction than the outer curled portion is bidirectional conductive pattern module, characterized in that formed stepped outward in the radial direction.
  12. 제8항에 있어서,The method of claim 8,
    상기 하부 접촉부의 내측 말린 부분은 외측 말린 부분보다 하부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성되는 것을 특징으로 하는 양방향 도전성 패턴 모듈.The inner curled portion of the lower contact portion protrudes in a lower direction than the outer curled portion is bidirectional conductive pattern module, characterized in that formed stepped outward in the radial direction.
  13. 제8항에 있어서,The method of claim 8,
    상기 연결부는 가로 방향으로 소정 폭을 갖도록 형성되어 상기 상부 접촉부와 상기 하부 접촉부 사이에서 상기 상부 접촉부와 상기 하부 접촉부를 상기 상하 방향으로 지지하는 것을 특징으로 하는 양방향 도전성 패턴 모듈.And the connection part is formed to have a predetermined width in the horizontal direction to support the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part.
  14. 양방향 도전성 패턴 모듈의 제조방법에 있어서,In the manufacturing method of the bidirectional conductive pattern module,
    (a) 도전성을 갖는 박판을 패터닝하여, 가로 방향으로 상호 이격된 복수의 상부 접촉 패턴과, 상하 방향으로 복수의 상기 상부 접촉 패턴과 이격되고 상기 가로 방향으로 상호 이격된 복수의 하부 접촉 패턴과, 상호 대응하는 위치의 상기 상부 접촉 패턴과 상기 하부 접촉 패턴을 연결하는 적어도 하나의 연결 패턴을 갖는 베이스 패턴을 형성하는 단계와;a plurality of upper contact patterns spaced apart from each other in the horizontal direction by patterning a conductive thin plate, a plurality of lower contact patterns spaced apart from the plurality of upper contact patterns in the vertical direction, and spaced apart from each other in the horizontal direction; Forming a base pattern having at least one connection pattern connecting the upper contact pattern and the lower contact pattern at positions corresponding to each other;
    (b) 상기 베이스 패턴을 도금하는 단계와;(b) plating the base pattern;
    (c) 각각의 상기 상부 접촉 패턴과 각각의 상기 하부 접촉 패턴이 태엽 형상을 갖도록 상기 상하 방향을 축으로 말아 복수의 상부 접촉부, 복수의 하부 접촉부 및 상호 대응하는 상기 상부 접촉부와 상기 하부 접촉부를 연결하는 연결부를 형성하는 단계를 포함하는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.(c) connecting the plurality of upper contact portions, the plurality of lower contact portions, and the corresponding upper contact portion and the lower contact portion by rolling the shaft in the up-down direction such that each of the upper contact pattern and each of the lower contact patterns has a winding shape. Method for manufacturing a bidirectional conductive pattern module comprising the step of forming a connecting portion.
  15. 제14항에 있어서,The method of claim 14,
    (d) 복수의 상기 상부 접촉부의 상부 표면과, 복수의 상기 하부 접촉부의 하부 표면이 각각 상부 방향 및 하부 방향으로 노출된 상태로 상기 연결부가 내부에 수용되도록 탄성을 갖는 절연성 재질의 절연성 본체를 형성하는 단계를 더 포함하는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.(d) forming an insulating body of an insulating material having elasticity such that the upper surfaces of the plurality of upper contact portions and the lower surfaces of the plurality of lower contact portions are respectively exposed in the upper direction and the lower direction so that the connecting portion is accommodated therein; Method of manufacturing a bidirectional conductive pattern module, characterized in that it further comprises a step.
  16. 제14항에 있어서,The method of claim 14,
    상기 (a) 단계에서 상기 연결 패턴은 대각선 방향으로 형성되어 상호 대응하는 상기 상부 접촉 패턴과 상기 하부 접촉 패턴을 연결하는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.In the step (a), the connection pattern is formed in a diagonal direction connecting the upper contact pattern and the lower contact pattern corresponding to each other, characterized in that the manufacturing method of the bidirectional conductive pattern module.
  17. 제14항에 있어서,The method of claim 14,
    상기 (c) 단계에서 상호 대응하는 상기 상부 접촉 패턴과 상기 하부 접촉 패턴은 상하 방향으로 동일 축을 중심으로 말려 상하 방향으로 대응하는 위치에 상기 상부 접촉부와 상기 하부 접촉부가 형성되는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.The upper contact pattern and the lower contact pattern corresponding to each other in the step (c) are rolled about the same axis in the vertical direction to form the upper contact portion and the lower contact portion at positions corresponding to the vertical direction. Method of manufacturing a pattern module.
  18. 제14항에 있어서,The method of claim 14,
    상기 (a) 단계에서는 상기 상부 접촉 패턴으로부터 상기 하부 접촉 패턴 방향으로 돌출되는 적어도 하나의 내부 지지 패턴이 도전성을 갖는 박판을 패터닝 과정에서 함께 형성되며;In the step (a), at least one inner support pattern protruding from the upper contact pattern in the direction of the lower contact pattern is formed together with the conductive thin plate in the patterning process;
    상기 내부 지지 패턴은 상기 (c) 단계를 통해 상기 상부 접촉부로부터 하부 방향으로 연장되는 내부 지지부를 형성하는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.The inner support pattern is a manufacturing method of the bidirectional conductive pattern module, characterized in that to form an inner support extending in the lower direction from the upper contact through the step (c).
  19. 제14항에 있어서,The method of claim 14,
    상기 상부 접촉 패턴은 상기 상하 방향으로의 폭이 상이하게 형성되거나 상기 가로 방향으로 단차지게 형성되어, 상기 상부 접촉부의 내측 말린 부분이 외측 말린 부분보다 상부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성되는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.The upper contact pattern may have a different width in the vertical direction or may be stepped in the horizontal direction so that the inner curled portion of the upper contact portion protrudes upward from the outer curled portion and is stepped radially outward. Method of manufacturing a bidirectional conductive pattern module, characterized in that.
  20. 제14항에 있어서,The method of claim 14,
    상기 하부 접촉 패턴은 상기 상하 방향으로의 폭이 상이하게 형성되거나 상기 가로 방향으로 단차지게 형성되어, 상기 하부 접촉부의 내측 말린 부분이 외측 말린 부분보다 하부 방향으로 돌출되어 반경 방향 외측으로 단차지게 형성되는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.The lower contact pattern may have a different width in the vertical direction or may be formed stepwise in the horizontal direction so that the inner curled portion of the lower contact portion protrudes downward from the outer curled portion and is stepped radially outward. Method of manufacturing a bidirectional conductive pattern module, characterized in that.
  21. 제14항에 있어서,The method of claim 14,
    상기 연결 패턴은 가로 방향으로 소정 폭을 갖도록 형성되어 상기 연결부가 상기 상부 접촉부와 상기 하부 접촉부 사이에서 상기 상부 접촉부와 상기 하부 접촉부를 상기 상하 방향으로 지지하는 것을 특징으로 하는 양방향 도전성 패턴 모듈의 제조방법.The connection pattern may be formed to have a predetermined width in a horizontal direction so that the connection part supports the upper contact part and the lower contact part in the vertical direction between the upper contact part and the lower contact part. .
  22. 양방향 도전성 핀의 제조방법에 있어서,In the manufacturing method of the bidirectional conductive pin,
    제14항 내지 제21항 중 어느 한 항에 따라 양방향 도전성 패턴 모듈을 제조하는 단계와,Manufacturing a bidirectional conductive pattern module according to any one of claims 14 to 21,
    상기 양방향 도전성 패턴 모듈의 절연성 본체를 상하 방향으로 절단하되 상호 연결된 하나씩의 상부 접촉부, 하부 접촉부 및 연결부 단위로 절단하여 복수의 양방향 도전성 핀을 형성하는 단계를 포Cutting the insulating main body of the bidirectional conductive pattern module in a vertical direction, and cutting the upper and lower contact parts and the connecting part by one unit to form a plurality of bidirectional conductive pins.
PCT/KR2016/012421 2016-05-30 2016-11-01 Bidirectional conductive pin, bidirectional conductive pattern module and method for preparing same WO2017209357A1 (en)

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