WO2017208328A1 - Amplificateur haute fréquence - Google Patents

Amplificateur haute fréquence Download PDF

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Publication number
WO2017208328A1
WO2017208328A1 PCT/JP2016/065980 JP2016065980W WO2017208328A1 WO 2017208328 A1 WO2017208328 A1 WO 2017208328A1 JP 2016065980 W JP2016065980 W JP 2016065980W WO 2017208328 A1 WO2017208328 A1 WO 2017208328A1
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WO
WIPO (PCT)
Prior art keywords
electrode
harmonic
frequency amplifier
fet
frequency signal
Prior art date
Application number
PCT/JP2016/065980
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English (en)
Japanese (ja)
Inventor
純 神岡
政毅 半谷
山中　宏治
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2016/065980 priority Critical patent/WO2017208328A1/fr
Priority to JP2016568713A priority patent/JP6289678B1/ja
Publication of WO2017208328A1 publication Critical patent/WO2017208328A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

Definitions

  • This invention relates to a high frequency amplifier for amplifying a high frequency signal.
  • a high-frequency amplifier that amplifies a high-frequency signal is mounted on a wireless communication device, a radar device, or the like.
  • Some high-frequency amplifiers use, for example, field-effect transistors (FETs) with a common source.
  • FETs field-effect transistors
  • Non-Patent Document 1 discloses a high-frequency amplifier that short-circuits the reflection phase of the second harmonic by providing a second harmonic processing circuit including a tip release stub.
  • the conventional high-frequency amplifier is configured as described above, high efficiency can be achieved by providing a second harmonic processing circuit including a tip release stub.
  • the second harmonic processing circuit including the tip release stub is large in size, it is difficult to be integrated in the immediate vicinity of the transistor, and it is necessary to connect to the transistor via a lead-out transmission line or a bonding wire. is there. As a result, there is a problem that the circuit is increased in size.
  • the lead-out transmission line and the bonding wire have an inductance component, there is a problem that a frequency band in which high-efficiency operation can be expected is narrowed.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a high-frequency amplifier capable of reducing the size of a circuit and expanding a frequency band in which high-efficiency operation can be expected. .
  • a high-frequency amplifier includes a transistor that amplifies a high-frequency signal input from an input electrode and outputs an amplified high-frequency signal from an output electrode, and a resonance circuit that resonates with a second harmonic of the high-frequency signal,
  • a resonant circuit is disposed between the upper electrode and the lower electrode, one upper electrode connected to the transistor input electrode and having two or more bent portions, the lower electrode grounded at one end And having a dielectric.
  • a resonant circuit that resonates with a second harmonic of a high-frequency signal has one end connected to the input electrode of the transistor, the upper electrode having two or more bent portions, and one end grounded. Since it is configured to have a base electrode and a dielectric disposed between the top electrode and the base electrode, it is possible to reduce the size of the circuit and to provide a frequency band that allows high-efficiency operation. There is an effect that can be spread.
  • FIG. 1 is a configuration diagram showing a high-frequency amplifier according to Embodiment 1 of the present invention.
  • FIG. 2 is a cross-sectional view taken along line A-A ′ of a second harmonic processing circuit 8 in the high frequency amplifier of FIG. 1. It is a perspective view which shows the upper electrode 9 and the lower electrode 10 of the high frequency amplifier by Embodiment 2 of this invention. It is a block diagram which shows the high frequency amplifier by Embodiment 3 of this invention. It is a block diagram which shows the high frequency amplifier by Embodiment 4 of this invention.
  • FIG. 1 is a block diagram showing a high frequency amplifier according to Embodiment 1 of the present invention
  • FIG. 2 is a cross-sectional view taken along line AA ′ of a second harmonic processing circuit 8 in the high frequency amplifier of FIG. 1 and 2
  • FET 1 is a transistor that amplifies a high-frequency signal input from an input electrode and outputs an amplified high-frequency signal from an output electrode.
  • the FET 1 is a grounded field effect transistor, and the FET 1 has a gate electrode 2 as an input electrode and a drain electrode 4 as an output electrode.
  • the source electrode 3 of the FET 1 is grounded via via holes 7a and 7b.
  • the FET 1 is not limited to a source grounded field effect transistor, and may be, for example, a drain grounded field effect transistor.
  • the bonding pad 5 a is a pad for inputting a high-frequency signal, and is connected to the gate electrode 2 of the FET 1 through the transmission line 6.
  • the bonding pad 5b is a pad for outputting a high frequency signal, and is connected to the drain electrode 4 of the FET1.
  • the transmission line 6 is a line connecting the bonding pad 5 a and the gate electrode 2 of the FET 1, and transmits a high-frequency signal input from the bonding pad 5 a to the gate electrode 2 of the FET 1.
  • the via holes 7a and 7b are composed of a hole connecting the front surface and the back surface of the substrate, and pads provided around the upper end of the hole. Pads provided around the upper ends of the via holes 7a and 7b are connected to the source electrode 3 of the FET 1, and the lower ends of the via holes 7a and 7b are connected to the ground applied to the back surface of the substrate. In addition, a hole middle portion in the via hole 7 a is connected to the base electrode 10.
  • the second harmonic processing circuit 8 is a resonance circuit that resonates with a second harmonic of a high frequency signal.
  • the second harmonic processing circuit 8 includes a MIM (Metal Insulator Metal) capacitor, and the MIM capacitor includes an upper electrode 9, a lower electrode 10, and a dielectric 11.
  • One end of the upper electrode 9 is connected to the gate electrode 2 of the FET 1 via the transmission line 6 and has a meander shape. That is, the upper electrode 9 has a shape having two or more bent portions 9a. In the example of FIG. 1, it has seven bending parts 9a. Since the upper electrode 9 has a meander shape, it has a large inductance component.
  • One end of the base electrode 10 is grounded via the via hole 7 a, and the base electrode 10 is disposed below the upper electrode 9.
  • a dielectric 11 is disposed between the upper electrode 9 and the lower electrode 10.
  • silicon nitride can be used as the dielectric 11.
  • a high-frequency signal input from the bonding pad 5 a is input to the gate electrode 2 of the FET 1 through the transmission line 6.
  • the high frequency signal input from the gate electrode 2 is amplified by the FET 1, and the high frequency signal amplified by the FET 1 is output from the drain electrode 4 of the FET 1 to the bonding pad 5b.
  • a second harmonic processing circuit 8 which is a series resonance circuit that resonates with a second harmonic of a high frequency signal is formed by the inductance components of the upper electrode 9, the lower electrode 10, and the via hole 7a and the capacitance component of the MIM capacitor. ing.
  • the second harmonic processing circuit 8 is disposed in the immediate vicinity of the gate electrode 2 of the FET 1, and the upper electrode 9 is shunt-connected to the transmission line 6. For this reason, the impedance at the second harmonic of the high-frequency signal looking into the input side from the gate electrode 2 of the FET 1 is short-circuited, and a highly efficient high-frequency amplifier is realized.
  • the second harmonic processing circuit 8 since the upper electrode 9 having a large inductance component and the MIM capacitor having a large capacitance component are integrated, a second harmonic processing circuit including a tip release stub, a transmission line, and an MIM capacitor are provided. Compared to a series resonant circuit connecting the two, a small resonant circuit can be realized.
  • the resonance circuit that resonates with the second harmonic of the high-frequency signal has one end connected to the gate electrode 2 of the FET 1 and has two or more bent portions 9a.
  • the upper electrode 9 is grounded, the ground electrode 10 is grounded at one end, and the dielectric 11 is disposed between the ground electrode 9 and the ground electrode 10.
  • the parasitic reactance of the transmission line 6 and the FET 1 can be ignored.
  • the resonance frequency of the second harmonic processing circuit 8 is high.
  • the base electrode 10 has a plate shape and only the upper electrode 9 has a meander shape. However, in the second embodiment, the base electrode 10 also has a top shape. Similar to the electrode 9, a meander-shaped one will be described.
  • FIG. 3 is a perspective view showing the upper electrode 9 and the lower electrode 10 of the high-frequency amplifier according to Embodiment 2 of the present invention.
  • the base electrode 10 has a meander shape. That is, the base electrode 10 has a shape having two or more bent portions 10a.
  • the dielectric 11 is not drawn for simplification of the drawing, but the dielectric 11 is disposed between the upper electrode 9 and the lower electrode 10.
  • the base electrode 10 since the base electrode 10 has a shape having two or more bent portions 10a, the inductance component is larger than that of the first embodiment. For this reason, when obtaining a series resonance circuit having the same resonance frequency, there is an effect that the size can be reduced as compared with the first embodiment.
  • Embodiment 3 FIG.
  • one double harmonic processing circuit 8 is disposed between the transmission line 6 and the via hole 7a.
  • two second harmonic processing circuits 8 are disposed. It may be a high frequency amplifier.
  • the second harmonic processing circuit 8a is a second harmonic processing circuit similar to the second harmonic processing circuit 8 in the first embodiment, and includes an upper electrode 9 having one end connected to the gate electrode 2 of the FET 1, and one end Has a base electrode 10 grounded through a via hole 7a, and an upper electrode 9 and a dielectric 11 disposed between the base electrode 10.
  • the second harmonic processing circuit 8b is a second harmonic processing circuit similar to the second harmonic processing circuit 8a, but one end of the base electrode 10 in the second harmonic processing circuit 8b is grounded via a via hole 7b.
  • the base electrode 10 in the second harmonic processing circuits 8a and 8b may have a meander shape as in the second embodiment.
  • the reflection coefficient in the impedance at the second harmonic of the high frequency signal is the above-described first embodiment.
  • 2 is closer to 1, so that it is less affected by the input side circuit, and a more efficient high-frequency amplifier is realized.
  • the upper electrode 9 has a meander shape. However, the upper electrode 9 only needs to have a shape having two or more bent portions 9a. 9 may be shaped like a spiral inductor.
  • FIG. 5 is a block diagram showing a high-frequency amplifier according to Embodiment 4 of the present invention.
  • the upper electrode 9 has a shape like a spiral inductor.
  • the underlying electrode 10 may also be shaped like a spiral inductor. Even in a shape like a spiral inductor, the inductance component becomes large as in the meander shape.
  • the transistor is the FET 1
  • the present invention is not limited to this.
  • the transistor may be a bipolar transistor.
  • the present invention is suitable for a high-frequency amplifier that amplifies a high-frequency signal.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

On décrit un amplificateur haute fréquence configuré de sorte qu'un second circuit résonnant de traitement harmonique (8), qui résonne à une seconde harmonique d'un signal haute fréquence, comprend: une électrode sus-jacente (9) dont une extrémité est connectée à une électrode de grille (2) d'un FET (1) et qui comporte au moins deux sections de flexion (9a); une électrode sous-jacente (10) dont une extrémité est mise à la terre; et un élément diélectrique (11) disposé entre l'électrode sus-jacente (9) et l'électrode sous-jacente (10). Cette configuration permet de réduire la taille du circuit et d'étendre la bande de fréquence dans laquelle une exécution à haut rendement peut être attendue.
PCT/JP2016/065980 2016-05-31 2016-05-31 Amplificateur haute fréquence WO2017208328A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2016/065980 WO2017208328A1 (fr) 2016-05-31 2016-05-31 Amplificateur haute fréquence
JP2016568713A JP6289678B1 (ja) 2016-05-31 2016-05-31 高周波増幅器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2016/065980 WO2017208328A1 (fr) 2016-05-31 2016-05-31 Amplificateur haute fréquence

Publications (1)

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WO2017208328A1 true WO2017208328A1 (fr) 2017-12-07

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JP (1) JP6289678B1 (fr)
WO (1) WO2017208328A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021140563A1 (fr) * 2020-01-07 2021-07-15 三菱電機株式会社 Dispositif semi-conducteur haute fréquence

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE112019007087B4 (de) * 2019-03-25 2023-12-28 Mitsubishi Electric Corporation Hochfrequenz-Halbleiterverstärker

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332908A (ja) * 2000-03-13 2001-11-30 Murata Mfg Co Ltd 非可逆回路素子および通信装置
JP2013118329A (ja) * 2011-12-05 2013-06-13 Mitsubishi Electric Corp 高周波増幅器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3005416B2 (ja) * 1994-03-01 2000-01-31 富士通株式会社 マイクロ波・ミリ波モノリシック集積回路
JP2011217357A (ja) * 2010-03-31 2011-10-27 Ngk Insulators Ltd バイアス回路
JP2013118580A (ja) * 2011-12-05 2013-06-13 Mitsubishi Electric Corp 高周波増幅器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001332908A (ja) * 2000-03-13 2001-11-30 Murata Mfg Co Ltd 非可逆回路素子および通信装置
JP2013118329A (ja) * 2011-12-05 2013-06-13 Mitsubishi Electric Corp 高周波増幅器

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021140563A1 (fr) * 2020-01-07 2021-07-15 三菱電機株式会社 Dispositif semi-conducteur haute fréquence
JPWO2021140563A1 (fr) * 2020-01-07 2021-07-15
JP7239023B2 (ja) 2020-01-07 2023-03-14 三菱電機株式会社 高周波半導体装置

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JP6289678B1 (ja) 2018-03-07
JPWO2017208328A1 (ja) 2018-06-14

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