WO2017206206A1 - 用于打印成膜的凹槽结构及其制作方法 - Google Patents

用于打印成膜的凹槽结构及其制作方法 Download PDF

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Publication number
WO2017206206A1
WO2017206206A1 PCT/CN2016/086545 CN2016086545W WO2017206206A1 WO 2017206206 A1 WO2017206206 A1 WO 2017206206A1 CN 2016086545 W CN2016086545 W CN 2016086545W WO 2017206206 A1 WO2017206206 A1 WO 2017206206A1
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Prior art keywords
dam
layer
branch
substrate
groove
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French (fr)
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周星宇
曾维静
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/121,034 priority Critical patent/US10243155B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a groove structure for printing a film and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED Organic Light Emitting Display
  • advantages such as large-area full-color display, it is recognized by the industry as the most promising display device.
  • the structure of an OLED display device generally includes a substrate, an anode, a cathode, and an organic functional layer sandwiched between the anode and the cathode.
  • the organic functional layer generally includes a Hole Transport Layer (HTL), an Emissive Layer (EML), and an Electro Transport Layer (ETL).
  • Each functional layer may be one layer, or more than one layer, for example, a hole transport functional layer, which may be subdivided into a Hole Injection Layer (HIL) and a hole transport layer; an electron transport functional layer may be subdivided It is an electron transport layer and an electron injection layer (EIL).
  • HIL Hole Injection Layer
  • EIL electron injection layer
  • the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • the OLED display device is generally produced by first forming an anode on a substrate, forming a hole transport layer on the anode, forming a light-emitting functional layer on the hole transport layer, and forming an electron transport functional layer on the light-emitting functional layer.
  • a cathode is formed on the transport functional layer, and the material of the cathode and the anode is usually indium tin oxide (ITO).
  • the preparation methods of the organic functional layers such as HTL, EML, and ETL generally include vacuum thermal evaporation (Vacuum Thermal Evaporation) and inkjet printing (Ink-jet Print, IJP).
  • the inkjet printing technology has more application potentials in the preparation of the organic functional layer of the AMOLED device than the conventional vacuum thermal evaporation, which has the advantages of material saving, mild process conditions, and uniform film formation.
  • IJP is to directly drop the ink in which the OLED material is dissolved into a pre-made pixel defining layer, and to form a desired pattern after the solvent is volatilized.
  • the pixel defining layer includes a dam and a plurality of array-arranged grooves surrounded by the dam, the grooves are used to restrict the ink, and after drying and baking, the ink shrinks within the range limited by the groove A film is formed.
  • the ink used in each layer has different hydrophilicity and hydrophobicity, so the printing is different.
  • we have different requirements for the hydrophobicity of the side of the dam For hydrophobic inks, we need a certain hydrophilicity on the side of the dam to prevent the contact angle from being too large, resulting in a thinner edge film; vice versa.
  • hydrophilic inks we need a certain hydrophobicity on the side of the dam to prevent the contact angle from being too small, resulting in a thicker edge film.
  • An object of the present invention is to provide a groove structure for printing a film which has a surface having different hydrophilicity and hydrophobicity, and can avoid uneven film thickness caused by evaporation of a solvent.
  • Another object of the present invention is to provide a method for fabricating a groove structure for printing a film, which has a surface having different hydrophilicity and hydrophobicity, and can avoid uneven film thickness caused by evaporation of a solvent.
  • the present invention provides a groove structure for printing a film, the groove structure is located on a substrate, including a dam, and a groove surrounded by the dam;
  • the dam comprises at least two layers of branched dam layers arranged in a stack;
  • the material of the branch dam layer is silicon nitride or silicon oxide, and the materials of the adjacent two-layer branch dam layers are different, and the material of the uppermost branch dam layer is silicon oxide;
  • the inclined inner peripheral surface of the branch dam layer made of silicon oxide and the upper surface of the uppermost branch dam layer is a hydrophobic surface
  • the inclined inner peripheral surface of the branch dam layer made of silicon nitride surrounding the groove is a hydrophilic surface.
  • the inclined inner peripheral surface of the branch dam layer made of silicon oxide and surrounded by the groove, and the upper surface of the uppermost branch dam layer are covered with a monomolecular silane-based reagent.
  • the dam comprises four layers of branched dam layers arranged in a stack.
  • the groove structure is used for printing film formation of an organic functional layer of an OLED display device, the substrate is provided with a first electrode, and the dam surrounding the groove is disposed on a peripheral edge of the first electrode and on the substrate .
  • the invention also provides a manufacturing method of a groove structure for printing film formation, comprising the following steps:
  • Step 1 providing a substrate, forming, by coating, drying, and etching processes, at least two layers of branched dam layers are sequentially formed on the substrate to form a dam, and the dam is surrounded by a groove;
  • the material of the branch dam layer is silicon nitride or silicon oxide, and the materials of the adjacent two-layer branch dam layers are different, and the material of the uppermost branch dam layer is silicon oxide;
  • Step 2 Perform oxygen plasma treatment on each branch dam layer to enhance each branch dam The hydrophilicity of the surface of the layer;
  • Step 3 Single-molecule self-assembly of each branch dam layer by using a silane-based reagent, so that the inclined inner peripheral surface of the branch dam layer made of silicon oxide is surrounded by the groove, and the upper surface of the uppermost branch dam layer becomes hydrophobic Sexual surface.
  • the substrate is provided with a first electrode, and the dam surrounding the groove is formed on the peripheral edge of the first electrode and the substrate.
  • the substrate is placed in a closed container, and the sealed container is evacuated and then passed into a silane-based reagent gas, so that the branch dam layer made of silicon oxide and the silane-based reagent undergo single molecule self-assembly. .
  • the solution in which the silane-based reagent is dissolved is dropped onto the substrate, so that the branch dam layer made of silicon oxide and the silane-based reagent undergo single molecule self-assembly.
  • step 4 of baking and cleaning the substrate is also included.
  • the invention also provides a manufacturing method of a groove structure for printing film formation, comprising the following steps:
  • Step 1 providing a substrate, forming, by coating, drying, and etching processes, at least two layers of branched dam layers are sequentially formed on the substrate to form a dam, and the dam is surrounded by a groove;
  • the material of the branch dam layer is silicon nitride or silicon oxide, and the materials of the adjacent two-layer branch dam layers are different, and the material of the uppermost branch dam layer is silicon oxide;
  • Step 2 performing oxygen plasma treatment on each branch dam layer to enhance the hydrophilicity of the surface of each branch dam layer;
  • Step 3 Single-molecule self-assembly of each branch dam layer by using a silane-based reagent, so that the inclined inner peripheral surface of the branch dam layer made of silicon oxide is surrounded by the groove, and the upper surface of the uppermost branch dam layer becomes hydrophobic Sexual surface
  • the substrate is provided with a first electrode, and the dam surrounding the groove is formed on the peripheral edge of the first electrode and the substrate;
  • Step 4. Baking and cleaning the substrate.
  • the present invention provides a groove structure for printing film formation, the groove structure being located on a substrate, including a dam, and a groove surrounded by the dam, the dam comprising at least two layers stacked a branch dam layer is provided, the material of the branch dam layer is silicon nitride or silicon oxide, and the materials of the adjacent two layers of the branch dam layer are different, and the material of the uppermost branch dam layer is silicon oxide, and the oxidation is adopted
  • the sloping inner peripheral surface of the branch dam layer made of silicon and the upper surface of the uppermost branch dam layer are covered with a monomolecular silane-based reagent to make it a hydrophobic surface, and the branch dam layer made of silicon nitride is surrounded.
  • the inclined inner peripheral surface of the groove is a hydrophilic surface, and when the film is formed by printing, the upper surface of the uppermost branch bank layer is hydrophobic, and the ink can be made The water can enter the groove better, and does not remain on the surface. According to the different hydrophobicity of the ink of each layer, the corresponding different hydrophobic and hydrophobic surfaces are selected, and the contact angle of the ink with the contact surface is reasonably adjusted to avoid the evaporation of the solvent.
  • the film thickness is uneven.
  • the invention provides a method for manufacturing a groove structure for printing film formation, which has a surface with different hydrophilicity and hydrophobicity, and can avoid uneven film thickness caused by solvent evaporation.
  • FIG. 1 is a schematic view showing a step 1 of a method for fabricating a groove structure for printing a film according to the present invention
  • FIG. 2 is a schematic view showing a step 2 of a method for fabricating a groove structure for printing a film according to the present invention
  • FIG. 3 is a schematic view showing a first embodiment of the step 3 of the method for fabricating a groove structure for printing a film according to the present invention
  • Figure 4 is a schematic view showing a second embodiment of the step 3 of the method for fabricating a groove structure for printing a film according to the present invention
  • Figure 5 is a schematic view of a groove structure for printing a film according to the present invention.
  • Figure 6 is a flow chart showing a method of fabricating a groove structure for printing a film according to the present invention.
  • the present invention provides a groove structure for printing a film formed on a substrate 1, comprising a bank 2, and a groove 3 surrounded by the bank 2.
  • the dam 2 includes at least two layers of branched dam layers 21 stacked, the material of the branch dam layer 21 is silicon nitride or silicon oxide, and the materials of the adjacent two-layer branch dam layers 21 are different.
  • the material of the upper branch dam layer 21 is silicon oxide.
  • the branched bank layer 21 made of silicon oxide is surrounded by the inclined inner peripheral surface of the groove 3, and the upper surface of the uppermost branch bank layer 21 is a hydrophobic surface.
  • the branched bank layer 21 made of silicon oxide is surrounded by the inclined inner peripheral surface of the groove 3, and the upper surface of the uppermost branch bank layer 21 is covered with a monomolecular silane-based reagent.
  • the silyl reagent reacts with the silanol (Si-OH) bond on the surface of the silica to form a single molecule self-assembly to form a hydrophobic surface.
  • the monomolecular film formed by self-assembly can be identified by Scan Electron Microscope (SEM) and Atomic Force Microscope (AFM) methods to observe surface roughness and density, and by scanning tunneling microscope (Scanning) Tunneling Microscope, STM), or infrared spectroscopy methods can also be found.
  • composition of the silane-based reagent is X 3 SiY, wherein X is a hydrolyzable group, including: chloro (Cl), methoxy (OMe), ethoxy (OEt), or methoxy
  • X is a hydrolyzable group, including: chloro (Cl), methoxy (OMe), ethoxy (OEt), or methoxy
  • OEt ethoxy
  • Y is a non-hydrolyzable group, and includes a combination of one or more of a hydrocarbon group having 6 to 20 carbon atoms and an aryl group having 6 to 20 carbon atoms.
  • the branched bank layer 21 made of silicon nitride is surrounded by the inclined inner peripheral surface of the groove 3 as a hydrophilic surface, and the hydrophilicity of the surface thereof can be further enhanced by an oxygen plasma (O 2 Plasma) treatment.
  • O 2 Plasma oxygen plasma
  • the surface of the branch dam layer 21 made of silicon nitride and the surface of the branch dam layer 21 made of silicon oxide have different hydrophilic and hydrophobic properties, when the solution is formed into a film, different inks having different hydrophilic and hydrophobic properties can be selected and adjusted.
  • the contact angle of the ink with its contact surface can avoid uneven film thickness caused by solvent evaporation.
  • the number of the branch dam layers 21 in the dam 2 is not limited, and preferably, the dam 2 includes four layers of branch dam layers 21 which are stacked one on another.
  • the groove structure can be used for printing film formation of an organic functional layer of an OLED display device
  • the substrate 1 is provided with a first electrode 11, and the bank 2 surrounding the groove 3 is disposed at the first
  • a hole injecting layer, a light emitting layer, and an electron transporting layer are formed in the recess 3
  • the second electrode is covered on the electron transporting layer.
  • the first electrode 11 and the second electrode are respectively an anode and a cathode of the OLED display device.
  • the present invention further provides a method for fabricating a groove structure for printing a film, comprising the following steps:
  • Step 1 a substrate 1 is provided, and at least two stacked branch dam layers 21 are sequentially formed on the substrate 1 by a coating, drying, and etching process to form a bank 2, and the bank 2 is surrounded. Groove 3;
  • the material of the branch dam layer 21 is silicon nitride or silicon oxide, and the materials of the adjacent two-layer branch dam layers 21 are different, and the material of the uppermost branch dam layer 21 is silicon oxide.
  • the number of the branch dam layers 21 in the dam 2 is not limited.
  • the dam 2 includes four layers of branched dam layers 21, and the materials are silicon nitride, silicon oxide, and nitrogen from bottom to top. Silicon, and silicon oxide.
  • the substrate 1 is provided with a first electrode 11, and the bank 2 surrounding the groove 3 is formed on the peripheral edge of the first electrode 11 and on the substrate 1.
  • each branch dam layer 21 is subjected to oxygen plasma treatment to enhance the hydrophilicity of the surface of each branch dam layer 21.
  • hydrophilicity of the surface including the branch dam layer 21 made of silicon nitride and the branch dam layer 21 made of silicon oxide can be enhanced by oxygen plasma treatment to increase the use of silicon nitride in the subsequent step.
  • the hydrophilicity of the branched dam layer 21 and the branched dam layer 21 made of silicon oxide are different.
  • Step 3 referring to FIG. 5, single-molecule self-assembly of each branch dam layer 21 by using a silane-based reagent, so that the branch dam layer 21 made of silicon oxide is surrounded by the inclined inner peripheral surface of the groove 3 and the uppermost branch The upper surface of the bank layer 21 becomes a hydrophobic surface.
  • the substrate 1 is placed in a closed container, and then the sealed container is evacuated, and then the silane-based reagent gas is introduced to make the branch dam layer 21 made of silicon oxide. Single molecule self-assembly with the silane-based reagent occurs.
  • a branch dam layer 21 made of silicon oxide and a single molecule of the silane-based reagent are generated. Assembly.
  • the surface of the branch dam layer 21 made of silicon oxide has a Si-OH bond, and the Si-OH bond can be self-assembled with a silane-based reagent to form a hydrophobic surface.
  • the monomolecular film formed by self-assembly can be identified by scanning electron microscopy and atomic force microscopy to observe the surface roughness and the degree of compactness, and the characteristics can also be found by scanning tunneling microscopy or infrared spectroscopy.
  • the groove structure can be used for printing film formation of an organic functional layer of an OLED display device
  • the substrate 1 is provided with a first electrode 11, and the bank 2 surrounding the groove 3 is disposed at the first
  • a hole injecting layer, a light emitting layer, and an electron transporting layer are formed in the recess 3
  • the second electrode is covered on the electron transporting layer.
  • the first electrode 11 and the second electrode are respectively an anode and a cathode of the OLED display device.
  • Step 4 The substrate 1 is baked and cleaned.
  • the present invention provides a groove structure for printing film formation, the groove structure is located on a substrate, including a dam, and a groove surrounded by the dam, the dam comprising at least two layers of stacked
  • the branch dam layer, the material of the branch dam layer is silicon nitride or silicon oxide, and the materials of the adjacent two layers of the branch dam layer are different, and the material of the uppermost branch dam layer is silicon oxide, and the silicon oxide is used.
  • the fabricated dam layer is surrounded by the inclined inner peripheral surface of the groove, and the upper surface of the uppermost branch dam layer is covered with a monomolecular silane-based reagent to make it a hydrophobic surface
  • the inclined inner peripheral surface of the branch dam layer made of silicon nitride is a hydrophilic surface, and when the film is formed into a film, the upper surface of the uppermost branch dam layer is hydrophobic, so that the ink can enter better. In the groove, it does not remain on the surface.
  • the corresponding different hydrophobic and hydrophobic surfaces are selected, and the contact angle of the ink with the contact surface is reasonably adjusted to avoid uneven film thickness caused by solvent evaporation.
  • the invention provides a method for manufacturing a groove structure for printing film formation, which has a surface with different hydrophilicity and hydrophobicity, and can avoid uneven film thickness caused by solvent evaporation.

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Abstract

一种用于打印成膜的凹槽结构及其制作方法，该凹槽结构位于基板(1)上，包括堤坝(2)、及由堤坝(2)围拢成的凹槽(3)，所述堤坝(2)包括至少两层层叠设置的分支堤坝层(21)，所述分支堤坝层(21)的材料为氮化硅或氧化硅，相邻的两层分支堤坝层(21)的材料不同，最上层的分支堤坝层(21)的材料为氧化硅，其中，采用氧化硅制作的分支堤坝层(21)围拢成凹槽(3)的倾斜内周面、以及最上层的分支堤坝层(21)的上表面为疏水性表面，而采用氮化硅制作的分支堤坝层(21)围拢成凹槽(3)的倾斜内周面为亲水性表面，能够避免溶剂挥发后造成的膜厚不均。

Description

用于打印成膜的凹槽结构及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种用于打印成膜的凹槽结构及其制作方法。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示器件具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽、及可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示器件的结构一般包括：基板、阳极、阴极以及夹在阳极与阴极之间的有机功能层。其中有机功能层，一般包括空穴传输功能层(Hole Transport Layer，HTL)、发光功能层(Emissive Layer，EML)、及电子传输功能层(Electron Transport Layer，ETL)。每个功能层可以是一层，或者一层以上，例如空穴传输功能层，可以细分为空穴注入层(Hole Injection Layer，HIL)和空穴传输层；电子传输功能层，可以细分为电子传输层和电子注入层(Electron Injection Layer，EIL)。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。
OLED显示器件的制作方法通常为，先在基板上形成阳极，在该阳极上形成空穴传输层，在空穴传输层上形成发光功能层，在发光功能层上形成电子传输功能层，在电子传输功能层上形成阴极，其中阴极与阳极的材料通常采用氧化铟锡(ITO)。HTL、EML、ETL等有机功能层的制备方式通常包括真空热蒸镀(Vacuum Thermal Evaporation)与喷墨打印(Ink-jet Print，IJP)两种。
喷墨打印技术在AMOLED器件有机功能层的制备中，相比于传统的真空热蒸镀具有节省材料，制程条件温和、成膜更均匀等诸多优点，所以更具应用潜力。IJP是将溶有OLED材料的墨水直接滴涂到预先制作好的像素定义层中，待溶剂挥发后形成所需图案。所述像素定义层包括堤坝、以及由堤坝围拢成的多个阵列排布的凹槽，所述凹槽由用来限制住墨水，通过干燥烘烤后，墨水收缩在该凹槽限制的范围内形成薄膜。由于OLED发光材料分为很多层，每一层采用的墨水亲疏水性不会一样，所以打印不同的 OLED层时，我们对堤坝侧面的亲疏水性的需求是不一样的，对于疏水的墨水，我们需要堤坝侧面具有一定的亲水性，防止接触角过大，造成边缘膜厚较薄；反之亦然，对于亲水的墨水，我们需要堤坝侧面具有一定的疏水性，防止接触角过小，造成边缘膜厚较厚。另外一方面，堤坝的上表面我们通常是需要疏水的，防止墨水残留，可以使墨水都流入到凹槽之中。而只用一种材料来制作堤坝显然很难达到以上目的。
发明内容
本发明的目的在于提供一种用于打印成膜的凹槽结构，具有亲疏水性不同的表面，能够避免溶剂挥发后造成的膜厚不均。
本发明的目的还在于提供一种用于打印成膜的凹槽结构的制作方法，具有亲疏水性不同的表面，能够避免溶剂挥发后造成的膜厚不均。
为实现上述目的，本发明提供了一种用于打印成膜的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
所述堤坝包括至少两层层叠设置的分支堤坝层；
所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅；
采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面为疏水性表面；
采用氮化硅制作的分支堤坝层围拢成凹槽的倾斜内周面为亲水性表面。
采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面覆盖有单分子硅烷基试剂。
所述堤坝包括四层层叠设置的分支堤坝层。
所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板上设有第一电极，所述围拢成凹槽的堤坝设于所述第一电极的四周边缘及基板上。
本发明还提供一种用于打印成膜的凹槽结构的制作方法，包括如下步骤：
步骤1、提供一基板，通过涂布、干燥、及蚀刻工艺在所述基板上依次形成至少两层层叠设置的分支堤坝层，形成堤坝，所述堤坝围拢成凹槽；
所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅；
步骤2、对各个分支堤坝层进行氧气等离子体处理，增强各个分支堤坝 层表面的亲水性；
步骤3、利用硅烷基试剂对各个分支堤坝层进行单分子自组装，使采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面变为疏水性表面。
所述步骤1中，基板上设有第一电极，所述围拢成凹槽的堤坝形成于所述第一电极的四周边缘及基板上。
所述步骤3中通过将基板放入密闭容器内，再将所述密闭容器抽真空后通入硅烷基试剂气体，使得采用氧化硅制作的分支堤坝层与所述硅烷基试剂发生单分子自组装。
所述步骤3中通过将溶有硅烷基试剂的溶液滴涂到基板上，使得采用氧化硅制作的分支堤坝层与所述硅烷基试剂发生单分子自组装。
还包括步骤4、对所述基板进行烘烤和清洗。
本发明还提供一种用于打印成膜的凹槽结构的制作方法，包括如下步骤：
步骤1、提供一基板，通过涂布、干燥、及蚀刻工艺在所述基板上依次形成至少两层层叠设置的分支堤坝层，形成堤坝，所述堤坝围拢成凹槽；
所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅；
步骤2、对各个分支堤坝层进行氧气等离子体处理，增强各个分支堤坝层表面的亲水性；
步骤3、利用硅烷基试剂对各个分支堤坝层进行单分子自组装，使采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面变为疏水性表面；
其中，所述步骤1中，基板上设有第一电极，所述围拢成凹槽的堤坝形成于所述第一电极的四周边缘及基板上；
步骤4、对所述基板进行烘烤和清洗。
本发明的有益效果：本发明提供了一种用于打印成膜的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽，所述堤坝包括至少两层层叠设置的分支堤坝层，所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅，通过在采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面覆盖单分子硅烷基试剂使其成为疏水性表面，而采用氮化硅制作的分支堤坝层围拢成凹槽的倾斜内周面为亲水性表面，在进行打印成膜时，最上层的分支堤坝层的上表面疏水，可以使墨 水能够更好地进入凹槽内，不在表面残留，根据每一层材料墨水的亲疏水性不同，选择相对应的不同亲疏水性表面，合理调节墨水与其接触表面的接触角，可以避免溶剂挥发后造成的膜厚不均。本发明提供的一种用于打印成膜的凹槽结构的制作方法，具有亲疏水性不同的表面，能够避免溶剂挥发后造成的膜厚不均。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的用于打印成膜的凹槽结构的制作方法的步骤1的示意图；
图2为本发明的用于打印成膜的凹槽结构的制作方法的步骤2的示意图；
图3为本发明的用于打印成膜的凹槽结构的制作方法的步骤3的第一实施例的示意图；
图4为本发明的用于打印成膜的凹槽结构的制作方法的步骤3的第二实施例的示意图；
图5为本发明的用于打印成膜的凹槽结构的示意图；
图6为本发明的用于打印成膜的凹槽结构的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图5，本发明提供一种用于打印成膜的凹槽结构，该凹槽结构位于基板1上，包括堤坝2、及由堤坝2围拢成的凹槽3。
具体地，所述堤坝2包括至少两层层叠设置的分支堤坝层21，所述分支堤坝层21的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层21的材料不同，最上层的分支堤坝层21的材料为氧化硅。
其中，采用氧化硅制作的分支堤坝层21围拢成凹槽3的倾斜内周面、以及最上层的分支堤坝层21的上表面为疏水性表面。
具体地，采用氧化硅制作的分支堤坝层21围拢成凹槽3的倾斜内周面、以及最上层的分支堤坝层21的上表面覆盖有单分子硅烷基试剂。利用 硅烷基试剂与氧化硅表面的硅羟基(Si-OH)键发生单分子自组装，形成疏水性表面。自组装后形成的单分子膜可以通过扫描电子显微镜(Scan Electron Microscope，SEM)、及原子力显微镜(Atomic Force Microscope，AFM)等方法观察表面粗糙度以及致密程度鉴别出来，另外通过扫描隧道显微镜(Scanning Tunneling Microscope，STM)、或红外光谱的方法也可以发现其特征。
进一步地，所述硅烷基试剂的组成为X3SiY，其中X为可水解基团，包括：氯基(Cl)、甲氧基(OMe)、乙氧基(OEt)、或甲氧基乙氧基(OC2H4OCH3)，Y为非水解基团，包括：含有6到20个碳原子的烃基、及含有6到20个碳原子芳基中的一种或多种的组合。
具体地，采用氮化硅制作的分支堤坝层21围拢成凹槽3的倾斜内周面为亲水性表面，并可以通过氧气等离子体(O2Plasma)处理进一步增强其表面的亲水性。
需要说明的是，由于采用氮化硅制作的分支堤坝层21与采用氧化硅制作的分支堤坝层21的表面具有不同亲疏水性，从而在溶液成膜时，可以对应选择不同亲疏水性的墨水，调节墨水与其接触表面的接触角，能够避免溶剂挥发后造成的膜厚不均。
具体地，所述堤坝2中分支堤坝层21的数量不作限制，优选地，所述堤坝2包括四层层叠设置的分支堤坝层21。
进一步地，所述凹槽结构可用于OLED显示器件的有机功能层的打印成膜，所述基板1上设有第一电极11，所述围拢成凹槽3的堤坝2设于所述第一电极11的四周边缘及基板1上，在凹槽3内制作空穴注入层、发光层以及电子传输层，并在电子传输层上覆盖第二电极。所述第一电极11及第二电极分别为所述OLED显示器件的阳极和阴极。
请参阅图6，本发明还提供一种用于打印成膜的凹槽结构的制作方法，包括如下步骤：
步骤1、请参阅图1，提供一基板1，通过涂布、干燥、及蚀刻工艺在所述基板1上依次形成至少两层层叠设置的分支堤坝层21，形成堤坝2，所述堤坝2围拢成凹槽3；
所述分支堤坝层21的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层21的材料不同，最上层的分支堤坝层21的材料为氧化硅。
具体地，所述堤坝2中分支堤坝层21的数量不作限制，优选地，所述堤坝2包括四层层叠设置的分支堤坝层21，材料自下而上分别为氮化硅、氧化硅、氮化硅、及氧化硅。
进一步地，所述步骤1中，基板1上设有第一电极11，所述围拢成凹槽3的堤坝2形成于所述第一电极11的四周边缘及基板1上。
步骤2、请参阅图2，对各个分支堤坝层21进行氧气等离子体处理，增强各个分支堤坝层21表面的亲水性。
需要说明的是，通过氧气等离子体处理可以增强包括采用氮化硅制作的分支堤坝层21与采用氧化硅制作的分支堤坝层21的表面的亲水性，以便在后续步骤中增加采用氮化硅制作的分支堤坝层21与采用氧化硅制作的分支堤坝层21的亲疏水性差异。
步骤3、请参阅图5，利用硅烷基试剂对各个分支堤坝层21进行单分子自组装，使采用氧化硅制作的分支堤坝层21围拢成凹槽3的倾斜内周面、以及最上层的分支堤坝层21的上表面变为疏水性表面。
可选地，请参阅图3，所述步骤3中通过将基板1放入密闭容器内，再将所述密闭容器抽真空后通入硅烷基试剂气体，使得采用氧化硅制作的分支堤坝层21与所述硅烷基试剂发生单分子自组装。
可选地，请参阅图4，所述步骤3中通过将溶有硅烷基试剂的溶液滴涂到基板1上，使得采用氧化硅制作的分支堤坝层21与所述硅烷基试剂发生单分子自组装。
需要说明的是，采用氧化硅制作的分支堤坝层21的表面具有Si-OH键，该Si-OH键可以与硅烷基试剂发生单分子自组装，形成疏水性表面。自组装后形成的单分子膜可以通过扫描电子显微镜、及原子力显微镜等方法观察表面粗糙度以及致密程度鉴别出来，另外通过扫描隧道显微镜、或红外光谱的方法也可以发现其特征。
进一步地，所述凹槽结构可用于OLED显示器件的有机功能层的打印成膜，所述基板1上设有第一电极11，所述围拢成凹槽3的堤坝2设于所述第一电极11的四周边缘及基板1上，在凹槽3内制作空穴注入层、发光层以及电子传输层，并在电子传输层上覆盖第二电极。所述第一电极11及第二电极分别为所述OLED显示器件的阳极和阴极。
步骤4、对所述基板1进行烘烤和清洗。
综上所述，本发明提供了一种用于打印成膜的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽，所述堤坝包括至少两层层叠设置的分支堤坝层，所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅，通过在采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面覆盖单分子硅烷基试剂使其成为疏水性表面，而 采用氮化硅制作的分支堤坝层围拢成凹槽的倾斜内周面为亲水性表面，在进行打印成膜时，最上层的分支堤坝层的上表面疏水，可以使墨水能够更好地进入凹槽内，不在表面残留，根据每一层材料墨水的亲疏水性不同，选择相对应的不同亲疏水性表面，合理调节墨水与其接触表面的接触角，可以避免溶剂挥发后造成的膜厚不均。本发明提供的一种用于打印成膜的凹槽结构的制作方法，具有亲疏水性不同的表面，能够避免溶剂挥发后造成的膜厚不均。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种用于打印成膜的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
    所述堤坝包括至少两层层叠设置的分支堤坝层；
    所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅；
    采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面为疏水性表面；
    采用氮化硅制作的分支堤坝层围拢成凹槽的倾斜内周面为亲水性表面。
  2. 如权利要求1所述的用于打印成膜的凹槽结构，其中，采用氧化硅材料制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面覆盖有单分子硅烷基试剂。
  3. 如权利要求1所述的用于打印成膜的凹槽结构，其中，所述堤坝包括四层层叠设置的分支堤坝层。
  4. 如权利要求1所述的用于打印成膜的凹槽结构，其中，所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板上设有第一电极，所述围拢成凹槽的堤坝设于所述第一电极的四周边缘及基板上。
  5. 一种用于打印成膜的凹槽结构的制作方法，包括如下步骤：
    步骤1、提供一基板，通过涂布、干燥、及蚀刻工艺在所述基板上依次形成至少两层层叠设置的分支堤坝层，形成堤坝，所述堤坝围拢成凹槽；
    所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅；
    步骤2、对各个分支堤坝层进行氧气等离子体处理，增强各个分支堤坝层表面的亲水性；
    步骤3、利用硅烷基试剂对各个分支堤坝层进行单分子自组装，使采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面变为疏水性表面。
  6. 如权利要求5所述的用于打印成膜的凹槽结构的制作方法，其中，所述步骤1中，基板上设有第一电极，所述围拢成凹槽的堤坝形成于所述第一电极的四周边缘及基板上。
  7. 如权利要求5所述的用于打印成膜的凹槽结构的制作方法，其中， 所述步骤3中通过将基板放入密闭容器内，再将所述密闭容器抽真空后通入硅烷基试剂气体，使得采用氧化硅制作的分支堤坝层与所述硅烷基试剂发生单分子自组装。
  8. 如权利要求5所述的用于打印成膜的凹槽结构的制作方法，其中，所述步骤3中通过将溶有硅烷基试剂的溶液滴涂到基板上，使得采用氧化硅制作的分支堤坝层与所述硅烷基试剂发生单分子自组装。
  9. 如权利要求5所述的用于打印成膜的凹槽结构的制作方法，还包括步骤4、对所述基板进行烘烤和清洗。
  10. 一种用于打印成膜的凹槽结构的制作方法，包括如下步骤：
    步骤1、提供一基板，通过涂布、干燥、及蚀刻工艺在所述基板上依次形成至少两层层叠设置的分支堤坝层，形成堤坝，所述堤坝围拢成凹槽；
    所述分支堤坝层的材料为氮化硅、或氧化硅，相邻的两层分支堤坝层的材料不同，最上层的分支堤坝层的材料为氧化硅；
    步骤2、对各个分支堤坝层进行氧气等离子体处理，增强各个分支堤坝层表面的亲水性；
    步骤3、利用硅烷基试剂对各个分支堤坝层进行单分子自组装，使采用氧化硅制作的分支堤坝层围拢成凹槽的倾斜内周面、以及最上层的分支堤坝层的上表面变为疏水性表面；
    其中，所述步骤1中，基板上设有第一电极，所述围拢成凹槽的堤坝形成于所述第一电极的四周边缘及基板上；
    步骤4、对所述基板进行烘烤和清洗。
  11. 如权利要求10所述的用于打印成膜的凹槽结构的制作方法，其中，所述步骤3中通过将基板放入密闭容器内，再将所述密闭容器抽真空后通入硅烷基试剂气体，使得采用氧化硅制作的分支堤坝层与所述硅烷基试剂发生单分子自组装。
  12. 如权利要求10所述的用于打印成膜的凹槽结构的制作方法，其中，所述步骤3中通过将溶有硅烷基试剂的溶液滴涂到基板上，使得采用氧化硅制作的分支堤坝层与所述硅烷基试剂发生单分子自组装。
PCT/CN2016/086545 2016-05-30 2016-06-21 用于打印成膜的凹槽结构及其制作方法 Ceased WO2017206206A1 (zh)

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