WO2017193453A1 - 湿法刻蚀装置及其防爆方法 - Google Patents

湿法刻蚀装置及其防爆方法 Download PDF

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Publication number
WO2017193453A1
WO2017193453A1 PCT/CN2016/086435 CN2016086435W WO2017193453A1 WO 2017193453 A1 WO2017193453 A1 WO 2017193453A1 CN 2016086435 W CN2016086435 W CN 2016086435W WO 2017193453 A1 WO2017193453 A1 WO 2017193453A1
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Prior art keywords
storage tank
liquid storage
etching
temperature
heater
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PCT/CN2016/086435
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English (en)
French (fr)
Inventor
李嘉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/117,450 priority Critical patent/US20180108545A1/en
Publication of WO2017193453A1 publication Critical patent/WO2017193453A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • the present invention relates to the field of semiconductor process technology, and in particular, to a wet etching apparatus and an explosion-proof method thereof.
  • LCD Liquid crystal display
  • PDAs personal digital assistants
  • digital cameras computer screens or laptop screens, etc.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • the metal wire in the thin film transistor array substrate is formed by etching a metal layer sputtered on the thin film transistor array substrate, and the metal wire conventionally used in the thin film transistor array substrate is an aluminum wire, with a liquid crystal display terminal such as a television
  • a liquid crystal display terminal such as a television
  • the etching liquid commonly used is a hydrogen peroxide system (H 2 O 2 ).
  • H 2 O 2 hydrogen peroxide system
  • the chemical change of decomposition, the reaction process is: Further, as the etching process of the copper wire continues, the concentration of copper ions in the etching solution is also increasing, the decomposition rate of H 2 O 2 is also faster, and the decomposition rate of H 2 O 2 is sharp. Increased, a large amount of gas and heat, which can easily lead to explosion of the machine.
  • the object of the present invention is to provide a wet etching device, which can effectively monitor and timely reduce the temperature in the liquid storage tank, prevent the temperature in the liquid storage tank from being excessively high, and ensure production safety and increase the production rate.
  • the object of the present invention is also to provide an explosion-proof method for a wet etching device, which can effectively monitor and timely reduce the temperature in the liquid storage tank, prevent the temperature in the liquid storage tank from being excessively high, and ensure production safety and increase production. Momentum.
  • the present invention firstly provides a wet etching apparatus, comprising: an etching reaction chamber, a chamber cleaning device disposed in the etching reaction chamber, and a liquid storage tank connected to the etching reaction chamber, a heater disposed in the liquid storage tank, a liquid discharge pipe provided at a bottom of the liquid storage tank and communicating with the liquid storage tank, an overflow port provided on an upper surface of the liquid storage tank side, and the overflow port And an overflow pipe of the drain pipe, and a control device electrically connected to the chamber cleaning device and the heater;
  • the liquid storage tank houses an etching liquid
  • the heater heats the etching liquid and monitors the temperature in the liquid storage tank
  • the control device turns off the heating when the temperature in the liquid storage tank reaches a preset upper temperature limit. Open the chamber cleaning device to spray the cleaning water to reduce the temperature inside the reservoir.
  • the wet etching apparatus is used in a copper metal etching process.
  • the washing water is deionized water.
  • the etching solution is a hydrogen peroxide etching solution.
  • the control device is a PLC.
  • the invention also provides an explosion-proof method for a wet etching device, comprising the following steps:
  • Step 1 Providing a wet etching apparatus, comprising: etching a reaction chamber, a chamber cleaning device disposed in the etching reaction chamber, a liquid storage tank connected to the etching reaction chamber, and the liquid storage tank a heater in the tank, a drain pipe provided at the bottom of the liquid storage tank and communicating with the liquid storage tank, an overflow port provided on the upper surface of the liquid storage tank side, and an overflow connecting the overflow port and the drain pipe a flow tube, and a control device electrically connected to the chamber cleaning device and the heater;
  • Step 2 the liquid storage tank contents are etched with a liquid medicine, the heater heats the etching liquid, and the heater monitors the temperature in the liquid storage tank, and transmits the temperature data to Control device
  • Step 3 The control device determines whether the temperature in the current liquid storage tank reaches a preset upper temperature limit. If the temperature in the current liquid storage tank reaches a preset upper temperature limit, the heater is turned off, and the cavity is opened.
  • the chamber cleaning device sprays the washing water, and the washing water rinses the etching reaction chamber, returns to the liquid storage tank and neutralizes the etching liquid in the liquid storage tank, reduces the temperature in the liquid storage tank, and prevents the liquid storage.
  • the box exploded in an overheated state.
  • the explosion-proof method of the wet etching apparatus is used for a copper metal etching process.
  • the washing water in the step 3 is deionized water.
  • the etching solution in the step 2 is a hydrogen peroxide etching solution.
  • the control device in the step 1 is a PLC.
  • the invention also provides a wet etching apparatus, comprising: an etching reaction chamber, a chamber cleaning device disposed in the etching reaction chamber, a liquid storage tank connected to the etching reaction chamber, and the storage tank a heater in the liquid tank, a drain pipe provided at the bottom of the liquid storage tank and communicating with the liquid storage tank, an overflow port provided on the upper surface of the liquid storage tank side, and the overflow port and the drain pipe An overflow pipe, and a control device electrically connected to the chamber cleaning device and the heater;
  • the liquid storage tank houses an etching liquid, the heater heats the etching liquid and monitors the temperature in the liquid storage tank, and the control device turns off the heating when the temperature in the liquid storage tank reaches a preset upper temperature limit. Open the chamber cleaning device to spray the cleaning water to reduce the temperature inside the reservoir;
  • wet etching device is used in a copper metal etching process
  • the washing water is deionized water.
  • the wet etching apparatus monitors the temperature in the liquid storage tank by using a heater, and automatically turns off the heater through the control device when the temperature in the liquid storage tank reaches a preset upper temperature limit.
  • the chamber cleaning device is turned on to spray the cleaning water, and the cleaning water is rinsed in the etching reaction chamber, and then returned to the liquid storage tank and neutralized with the etching liquid in the liquid storage tank, so that the temperature in the liquid storage tank is lowered. It can effectively monitor and timely reduce the temperature in the liquid storage tank, prevent the temperature in the liquid storage tank from exploding, ensure the production safety and increase the production rate.
  • Especially suitable for copper etching with hydrogen peroxide etching liquid Especially suitable for copper etching with hydrogen peroxide etching liquid.
  • the metal etching process can effectively prevent the explosion caused by the decomposition of hydrogen peroxide during the process.
  • the explosion-proof method of the wet etching device provided by the invention can effectively monitor and timely reduce the temperature in the liquid storage tank, prevent the temperature in the liquid storage tank from being excessively high, and ensure the safety of production and increase the production rate.
  • Figure 1 is a structural view of a wet etching apparatus of the present invention
  • FIG. 2 is a flow chart of an explosion-proof method of the wet etching apparatus of the present invention.
  • the present invention provides a wet etching apparatus, comprising: an etching reaction chamber 1, a chamber cleaning device 11 disposed in the etching reaction chamber 1, and a storage connected to the etching reaction chamber 1.
  • a liquid tank 2 a heater 22 provided in the liquid storage tank 2, a drain pipe 3 provided at the bottom of the liquid storage tank 2 and communicating with the liquid storage tank 2, and a drain pipe 3 provided on the upper surface of the liquid storage tank 2 side
  • An overflow port 4 an overflow pipe 5 that communicates the overflow port 4 and the drain pipe 3, and a control device 23 that is electrically connected to the chamber cleaning device 11 and the heater 22.
  • the liquid storage tank 2 is for accommodating an etching liquid
  • the heater 22 is for heating and etching the chemical liquid and monitoring the temperature inside the liquid storage tank 2
  • the control device 23 is used for liquid storage.
  • the temperature in the tank 2 reaches the preset upper temperature limit
  • the heater 22 is turned off, and the chamber cleaning device 11 is opened, and the chamber cleaning device 11 is configured to spray the washing water to lower the temperature in the liquid tank 2, the engraving
  • the etching reaction chamber 1 is used for performing an etching reaction
  • the overflow port 4 and the overflow tube 5 are used for discharging the etching liquid in time when the etching liquid in the liquid storage tank 2 is excessive to prevent overflow.
  • the drain pipe 3 is used to exclude the liquid medicine in the reservoir 2.
  • the wet etching apparatus is suitable for a wet etching process which is prone to explosion due to excessive temperature of a liquid storage tank during a wet etching process, for example, copper which is etched by using a hydrogen peroxide etching solution.
  • Metal etching process is suitable for a wet etching process which is prone to explosion due to excessive temperature of a liquid storage tank during a wet etching process, for example, copper which is etched by using a hydrogen peroxide etching solution.
  • Metal etching process for example, metal etching process.
  • the cleaning water sprayed by the chamber cleaning device 11 is deionized water (DIW), and the deionized water can effectively remove impurities such as colloids and suspended matter on the device to be etched, and etching with superheat. Neutralization of the chemical solution can effectively lower the temperature in the reservoir 2.
  • DIW deionized water
  • control device 23 is a Programmable Logic Controller (PLC), and the automatic control of the heater 22 and the chamber cleaning device 11 is realized by the PLC to simplify the operation.
  • PLC Programmable Logic Controller
  • the control device 23 controls the heater 22 to automatically close, and the chamber cleaning device 11 automatically opens and sprays
  • the ionized water is discharged, and the entire etching reaction chamber 1 is rinsed.
  • the etching solution remaining in the etching reaction 1 and the deionized water are returned along the pipeline to the liquid storage tank 2, deionized water and liquid storage.
  • the superheated etching solution in the tank 2 is neutralized, so that the temperature in the liquid storage tank 2 is gradually lowered, the liquid level in the liquid storage tank 2 is gradually increased, and the liquid medicine exceeding the position of the overflow port 4 is discharged from the overflow pipe 5 Discharge, when the temperature of the liquid storage tank 2 is lowered to room temperature, the control device 23 automatically closes the chamber.
  • the washing device 11 opens the drain pipe at the bottom of the liquid storage tank 2, and discharges all the remaining chemical liquids, thereby effectively preventing the temperature of the liquid storage tank 2 from being excessively high and causing an explosion.
  • the present invention further provides an explosion-proof method of a wet etching apparatus, comprising the following steps:
  • Step 1 Providing a wet etching apparatus, comprising: etching a reaction chamber 1, a chamber cleaning device 11 disposed in the etching reaction chamber 1, and a liquid storage tank 2 connected to the etching reaction chamber 1.
  • a heater 22 in the liquid storage tank 2 a drain pipe 3 provided at the bottom of the liquid storage tank 2 and communicating with the liquid storage tank 2, an overflow port 4 provided on the upper surface of the liquid storage tank 2 side,
  • An overflow pipe 5 that communicates the overflow port 4 and the drain pipe 3, and a control device 23 that is electrically connected to the chamber cleaning device 11 and the heater 22 are provided.
  • the liquid storage tank 2 is for accommodating an etching liquid
  • the etching reaction chamber 1 is used for performing an etching reaction
  • the overflow port 4 and the overflow pipe 5 are used in the liquid storage tank 2
  • the etching liquid is discharged in time to prevent overflow
  • the liquid discharging pipe 3 is used to exclude the liquid medicine in the liquid storage tank 2.
  • control device 23 is a PLC.
  • Step 2 the heater 22 heats the etching solution contained in the liquid storage tank 2, while the heater 22 monitors the temperature in the liquid storage tank 2, and transmits the temperature data to the control device.
  • Step 3 The control device 23 determines whether the temperature in the current liquid storage tank 2 reaches a preset upper temperature limit. If the temperature in the current liquid storage tank 2 reaches a preset upper temperature limit, the heater 22 is turned off, and the chamber is opened. The cleaning device 11 sprays the cleaning water, and the cleaning water rinses the etching reaction chamber 1 and then returns to the liquid storage tank 2 and neutralizes the etching liquid in the liquid storage tank 2 to lower the temperature in the liquid storage tank 2. To prevent the reservoir 2 from overheating and exploding.
  • the wet etching apparatus is suitable for a wet etching process which is prone to explosion due to excessive temperature of a liquid storage tank during a wet etching process, for example, copper which is etched by using a hydrogen peroxide etching solution.
  • Metal etching process is suitable for a wet etching process which is prone to explosion due to excessive temperature of a liquid storage tank during a wet etching process, for example, copper which is etched by using a hydrogen peroxide etching solution.
  • Metal etching process for example, metal etching process.
  • the cleaning water sprayed by the chamber cleaning device 11 is deionized water, and the deionized water can effectively remove impurities such as colloids and suspended matter on the device to be etched, and neutralize with the overheated etching solution.
  • the temperature inside the reservoir 2 can be effectively reduced.
  • the control device 23 controls the heater 22 to be automatically turned off, the chamber cleaning device 11 is automatically opened, the ionized water is sprayed out, and the entire etching reaction chamber 1 is rinsed, the etching
  • the etching solution remaining in the reaction 1 is returned to the reservoir 2 along the pipeline along with the deionized water, and the deionized water and the superheated etching solution in the reservoir 2 are neutralized, so that the inside of the reservoir 2
  • the temperature gradually decreases, and the liquid level in the liquid storage tank 2 gradually rises, exceeding the position of the overflow port 4.
  • the liquid medicine is discharged from the overflow pipe 5.
  • the control device 23 automatically closes the chamber cleaning device 11, and the liquid discharge pipe at the bottom of the liquid storage tank 2 is opened, leaving the remaining The liquid is discharged cleanly, thereby effectively preventing the temperature of the liquid storage tank 2 from being excessively high and causing an explosion.
  • the wet etching apparatus monitors the temperature in the liquid storage tank by using a heater.
  • the heater is automatically turned off by the control device to open.
  • the chamber cleaning device sprays the cleaning water, and the cleaning water rinses the etching reaction chamber, returns to the liquid storage tank and neutralizes the etching liquid in the liquid storage tank, so that the temperature in the liquid storage tank is lowered, and the temperature can be lowered.
  • Effectively monitor and timely reduce the temperature in the liquid storage tank prevent the temperature in the liquid storage tank from exploding, ensure production safety, and improve the production rate.
  • Especially suitable for copper metal etching with hydrogen peroxide etching liquid are especially suitable for copper metal etching with hydrogen peroxide etching liquid.
  • the etching process can effectively prevent the explosion caused by the decomposition of hydrogen peroxide during the process.
  • the explosion-proof method of the wet etching device provided by the invention can effectively monitor and timely reduce the temperature in the liquid storage tank, prevent the temperature in the liquid storage tank from being excessively high, and ensure the safety of production and increase the production rate.

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Abstract

本发明提供一种湿法刻蚀装置及其防爆方法，利用加热器(22)监控储液箱(2)内的温度，当储液箱(2)内的温度达到预设的温度上限时，通过控制装置(23)自动关闭加热器(22)，打开腔室清洗装置(11)喷出清洗水，清洗水对刻蚀反应腔(1)进行冲洗后，回流至储液箱(2)内并与储液箱(2)内的刻蚀药液中和，使得储液箱(2)内的温度降低，能够有效监控并及时降低储液箱(2)内的温度，防止储液箱(2)内的温度过高发生爆炸，保障生产安全，提升生产稼动率。

Description

湿法刻蚀装置及其防爆方法 技术领域
本发明涉及半导体制程技术领域，尤其涉及一种湿法刻蚀装置及其防爆方法。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等，在平板显示领域中占主导地位。
随着薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)逐渐往超大尺寸、高驱动频率、高分辨率等方面发展，如何有效地降低面板导线电阻与寄生电容日趋重要。薄膜晶体管液晶显示器在制作时，高质量的导线制程技术已经成为主宰薄膜晶体管组件与面板特性的关键。
薄膜晶体管阵列基板中的金属导线是将溅射在薄膜晶体管阵列基板上的金属层通过蚀刻工艺制成，常规应用于薄膜晶体管阵列基板中的金属导线为铝导线，随着电视等液晶显示终端的大尺寸化、高解析度以及驱动频率高速化的发展趋势及要求，液晶显示领域技术人员不得不面对薄膜晶体管阵列基板中电阻及所造成的电阻或电容时间延迟问题，而铝导线具有较高的电阻率使得薄膜晶体管阵列基板的像素电极不能够充分充电，随着高频寻址液晶显示的广泛应用，这一现象更加明显。
由于铜导线制程具有低电阻、低延迟现象等优点，可以让讯号寻址速度更快、扫描线更密集，显示画质更清新，在铜制程良率提升之后，超高清分辨率的高画质面板的生产成本可望进一步降低；目前大尺寸薄膜晶体管液晶显示器中的导线普遍用铜取代铝，目前的铜导线刻蚀过程中，通常采用的刻蚀药液为双氧水系(H2O2)，该刻蚀药液在使用时会存在以下问题：随着刻蚀制程的持续，刻蚀药液中铜离子的浓度也会不断上升，而H2O2在铜离子的作用下会有加速分解的化学变化，反应过程为：
Figure PCTCN2016086435-appb-000001
进一步的，随着铜导线刻蚀过程的不断进行，刻蚀药 液中铜离子的浓度的也不断增加，H2O2的分解速率也越来越快，H2O2的分解速率将急剧加大，产生大量气体和热量，极易导致机台发生爆炸。
发明内容
本发明的目的在于提供一种湿法刻蚀装置，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
本发明的目的还在于提供一种湿法刻蚀装置的防爆方法，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
为实现上述目的，本发明首先提供一种湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
所述储液箱容置刻蚀药液，所述加热器加热刻蚀药液并监控储液箱内的温度，所述控制装置在储液箱内的温度达到预设的温度上限时关闭加热器，打开腔室清洗装置喷出清洗水，降低储液箱内的温度。
所述湿法刻蚀装置用于铜金属刻蚀制程。
所述清洗水为去离子水。
所述刻蚀药液为双氧水系刻蚀药液。
所述控制装置为PLC。
本发明还提供一种湿法刻蚀装置的防爆方法，包括如下步骤：
步骤1、提供一湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
步骤2、所述储液箱内容置刻蚀药液，所述加热器对所述刻蚀药液进行加热，同时所述加热器监控所述储液箱内的温度，并将温度数据传输给控制装置；
步骤3、所述控制装置判断当前储液箱内的温度是否达到预设的温度上限，若当前储液箱内的温度达到预设的温度上限，则关闭加热器，打开腔 室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，降低储液箱内的温度，防止储液箱过热爆炸。
所述湿法刻蚀装置的防爆方法用于铜金属刻蚀制程。
所述步骤3中的清洗水为去离子水。
所述步骤2中的刻蚀药液为双氧水系刻蚀药液。
所述步骤1中的控制装置为PLC。
本发明还提供一种湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
所述储液箱容置刻蚀药液，所述加热器加热刻蚀药液并监控储液箱内的温度，所述控制装置在储液箱内的温度达到预设的温度上限时关闭加热器，打开腔室清洗装置喷出清洗水，降低储液箱内的温度；
其中，所述湿法刻蚀装置用于铜金属刻蚀制程；
其中，所述清洗水为去离子水。
本发明的有益效果：本发明提供的湿法刻蚀装置，利用加热器监控储液箱内的温度，当储液箱内的温度达到预设的温度上限时，通过控制装置自动关闭加热器，打开腔室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，使得储液箱内的温度降低，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率，尤其适用于采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程，能够有效防止制程过程中因双氧水分解引起的爆炸。本发明提供的湿法刻蚀装置的防爆方法，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的湿法刻蚀装置的结构图；
图2为本发明的湿法刻蚀装置的防爆方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种湿法刻蚀装置，包括：刻蚀反应腔1、设于所述刻蚀反应腔1内的腔室清洗装置11、与刻蚀反应腔1连通的储液箱2、设于所述储液箱2内的加热器22、设于储液箱2底部并与所述储液箱2连通的排液管3、设于储液箱2侧上方表面的溢流口4、连通所述溢流口4和排液管3的溢流管5、以及与所述腔室清洗装置11、加热器22电性连接的控制装置23。
具体地，所述储液箱2用于容置刻蚀药液，所述加热器22用于加热刻蚀药液并监控储液箱2内的温度，所述控制装置23用于在储液箱2内的温度达到预设的温度上限时关闭加热器22，打开腔室清洗装置11，所述腔室清洗装置11用于喷出清洗水来降低储液箱2内的温度，所述刻蚀反应腔1用于进行刻蚀反应，所述溢流口4和溢流管5用于在储液箱2内的刻蚀药液过多时，将刻蚀药液及时排出，防止溢出，所述排液管3用于排除储液箱2内的药液。
具体地，所述湿法刻蚀装置适用于在湿法刻蚀过程中容易发生储液箱温度过高导致爆炸的湿法刻蚀制程，例如，采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程。
优选地，所述腔室清洗装置11喷出的清洗水为去离子水(Deionized Water，DIW)，去离子水可以有效清除待刻蚀装置上的胶体和悬浮物等杂质，与过热的刻蚀药液进行中和，可以有效降低储液箱2内的温度。
具体地，所述控制装置23为可编程逻辑控制器(Programmable Logic Controller，PLC)，通过PLC实现对所述加热器22和腔室清洗装置11的自动控制，简化操作。
具体地，所述湿法制程装置检测到储液箱2内的温度过高后，对其进行降温的工作过程为：控制装置23控制加热器22自动关闭，腔室清洗装置11自动打开，喷出去离子水，对整个刻蚀反应腔1进行冲洗，所述刻蚀反应1内残留的刻蚀药液和去离子水一起沿着管道回流到储液箱2中，去离子水和储液箱2中过热的刻蚀药液中和，使得储液箱2内的温度逐渐降低，储液箱2中的液位逐渐升高，超过溢流口4位置的药液从溢流管5中排出，待储液箱2的温度降低到室温的时候，控制装置23自动关闭腔室清 洗装置11，储液箱2底部的排液管打开，将剩余的全部药液排放干净，从而有效防止储液箱2的温度过高引起爆炸。
请参阅图2，基于上述湿法刻蚀装置，本发明还提供一种湿法刻蚀装置的防爆方法，包括如下步骤：
步骤1、提供一湿法刻蚀装置，包括：刻蚀反应腔1、设于所述刻蚀反应腔1内的腔室清洗装置11、与刻蚀反应腔1连通的储液箱2、设于所述储液箱2内的加热器22、设于储液箱2底部并与所述储液箱2连通的排液管3、设于储液箱2侧上方表面的溢流口4、连通所述溢流口4和排液管3的溢流管5、以及与所述腔室清洗装置11、加热器22电性连接的控制装置23。
具体地，所述储液箱2用于容置刻蚀药液，所述刻蚀反应腔1用于进行刻蚀反应，所述溢流口4和溢流管5用于在储液箱2内的刻蚀药液过多时，将刻蚀药液及时排出，防止溢出，所述排液管3用于排除储液箱2内的药液。
优选地，所述控制装置23为PLC。
步骤2、所述加热器22对容置于储液箱2内的刻蚀药液进行加热，同时所述加热器22监控所述储液箱2内的温度，并将温度数据传输给控制装置23；
步骤3、所述控制装置23判断当前储液箱2内的温度是否达到预设的温度上限，若当前储液箱2内的温度达到预设的温度上限，则关闭加热器22，打开腔室清洗装置11喷出清洗水，清洗水对刻蚀反应腔1进行冲洗后，回流至储液箱2内并与储液箱2内的刻蚀药液中和，降低储液箱2内的温度，防止储液箱2过热爆炸。
具体地，所述湿法刻蚀装置适用于在湿法刻蚀过程中容易发生储液箱温度过高导致爆炸的湿法刻蚀制程，例如，采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程。
优选地，所述腔室清洗装置11喷出的清洗水为去离子水，去离子水可以有效清除待刻蚀装置上的胶体和悬浮物等杂质，与过热的刻蚀药液进行中和，可以有效降低储液箱2内的温度。
进一步地，所述步骤3的详细过程为：控制装置23控制加热器22自动关闭，腔室清洗装置11自动打开，喷出去离子水，对整个刻蚀反应腔1进行冲洗，所述刻蚀反应1内残留的刻蚀药液和去离子水一起沿着管道回流到储液箱2中，去离子水和储液箱2中过热的刻蚀药液中和，使得储液箱2内的温度逐渐降低，储液箱2中的液位逐渐升高，超过溢流口4位置 的药液从溢流管5中排出，待储液箱2的温度降低到室温的时候，控制装置23自动关闭腔室清洗装置11，储液箱2底部的排液管打开，将剩余的全部药液排放干净，从而有效防止储液箱2的温度过高引起爆炸。
综上所述，本发明提供的湿法刻蚀装置，利用加热器监控储液箱内的温度，当储液箱内的温度达到预设的温度上限时，通过控制装置自动关闭加热器，打开腔室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，使得储液箱内的温度降低，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率，尤其适用于采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程，能够有效防止制程过程中因双氧水分解引起的爆炸。本发明提供的湿法刻蚀装置的防爆方法，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (13)

  1. 一种湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
    所述储液箱容置刻蚀药液，所述加热器加热刻蚀药液并监控储液箱内的温度，所述控制装置在储液箱内的温度达到预设的温度上限时关闭加热器，打开腔室清洗装置喷出清洗水，降低储液箱内的温度。
  2. 如权利要求1所述的湿法刻蚀装置，其中，所述湿法刻蚀装置用于铜金属刻蚀制程。
  3. 如权利要求2所述的湿法刻蚀装置，其中，所述清洗水为去离子水。
  4. 如权利要求2所述的湿法刻蚀装置，其中，所述刻蚀药液为双氧水系刻蚀药液。
  5. 如权利要求1所述的湿法刻蚀装置，其中，所述控制装置为PLC。
  6. 一种湿法刻蚀装置的防爆方法，包括如下步骤：
    步骤1、提供一湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
    步骤2、所述加热器对容置于储液箱内的刻蚀药液进行加热，同时所述加热器监控所述储液箱内的温度，并将温度数据传输给控制装置；
    步骤3、所述控制装置判断当前储液箱内的温度是否达到预设的温度上限，若当前储液箱内的温度达到预设的温度上限，则关闭加热器，打开腔室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，降低储液箱内的温度，防止储液箱过热爆炸。
  7. 如权利要求6所述的湿法刻蚀装置的防爆方法，其中，所述湿法刻蚀装置的防爆方法用于铜金属刻蚀制程。
  8. 如权利要求7所述的湿法刻蚀装置的防爆方法，其中，所述步骤3中的清洗水为去离子水。
  9. 如权利要求7所述的湿法刻蚀装置的防爆方法，其中，所述步骤2中的刻蚀药液为双氧水系刻蚀药液。
  10. 如权利要求6所述的湿法刻蚀装置的防爆方法，其中，所述步骤1中的控制装置为PLC。
  11. 一种湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
    所述储液箱容置刻蚀药液，所述加热器加热刻蚀药液并监控储液箱内的温度，所述控制装置在储液箱内的温度达到预设的温度上限时关闭加热器，打开腔室清洗装置喷出清洗水，降低储液箱内的温度；
    其中，所述湿法刻蚀装置用于铜金属刻蚀制程；
    其中，所述清洗水为去离子水。
  12. 如权利要求11所述的湿法刻蚀装置，其中，所述刻蚀药液为双氧水系刻蚀药液。
  13. 如权利要求11所述的湿法刻蚀装置，其中，所述控制装置为PLC。
PCT/CN2016/086435 2016-05-10 2016-06-20 湿法刻蚀装置及其防爆方法 Ceased WO2017193453A1 (zh)

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