WO2017177618A1 - 传感器及其制造方法、电子设备 - Google Patents

传感器及其制造方法、电子设备 Download PDF

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WO2017177618A1
WO2017177618A1 PCT/CN2016/099579 CN2016099579W WO2017177618A1 WO 2017177618 A1 WO2017177618 A1 WO 2017177618A1 CN 2016099579 W CN2016099579 W CN 2016099579W WO 2017177618 A1 WO2017177618 A1 WO 2017177618A1
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layer
conductive layer
sensor
insulating layer
disposed
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PCT/CN2016/099579
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English (en)
French (fr)
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林家强
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京东方科技集团股份有限公司
Ka图像
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Priority to RU2017122755A priority Critical patent/RU2710383C1/ru
Priority to EP16876956.0A priority patent/EP3444847B1/en
Priority to KR1020177019102A priority patent/KR102035795B1/ko
Priority to US15/540,411 priority patent/US10269837B2/en
Priority to JP2017533486A priority patent/JP6858700B2/ja
Publication of WO2017177618A1 publication Critical patent/WO2017177618A1/zh

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Definitions

  • the sensor 100 may further include a passivation layer 104.
  • the passivation layer 104 is provided with a second via 1072.
  • the passivation layer 104 is disposed on the source 1025 and the first insulating layer 106 in a direction perpendicular to the substrate.
  • the second via 1072 penetrates through the passivation layer 104 and communicates with the first via 1071.
  • the auxiliary conductive layer 1034 can assist the conduction of the conductive layer 1031 to ensure normal transmission of signals.
  • the sensor 100 may include the insulating layer 106 and the passivation layer 104, but does not include the shielding metal layer 105.
  • the conductive layer 1031 is disposed in the first via 1071, the second via 1072, and a portion of the first insulating layer.
  • the source 106 is electrically connected to the source 1025 through the first via 1071 and the second via 1072.
  • the maximum aperture L2 of the second via 1072 is smaller than the minimum aperture L1 of the first via 1071.
  • the conductive layer 1031 is disposed at least on sidewalls of the first via 1071 and the second via 1072, and at least a portion of the conductive layer 1031 located at the sidewall is completely covered by the auxiliary conductive layer 1034.
  • the sensor provided by the embodiment of the present disclosure is, for example, a photoelectric sensor, but is not limited to a photoelectric sensor, and may be other sensors that utilize a current to transmit a signal.
  • the method of manufacturing the sensor provided by the embodiment of the present disclosure further includes forming a second insulating layer on the sensing active layer.
  • the gate insulating layer 1022 may be made of SiNx or SiOx.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

一种传感器及其制造方法、电子设备，该传感器(100)包括：衬底基板(101)；薄膜晶体管(102)，设置在所述衬底基板上，所述薄膜晶体管包括源极(1025)；第一绝缘层(106)，设置在所述薄膜晶体管(102)上，所述第一绝缘层(106)中设置有贯穿所述第一绝缘层(106)的第一过孔(1071)；导电层(1031)，设置于所述第一过孔(1071)中和部分所述第一绝缘层(106)上并通过所述第一过孔(1071)与所述源极(1025)电连接；偏压电极(1032)，设置于所述第一绝缘层(106)上且与所述导电层(1031)分离；传感有源层(1033)，分别与所述导电层(1031)和所述偏压电极(1032)连接；以及辅助导电层(1034)，设置于所述导电层(1031)上。该传感器及其制造方法，在不增加工序的情况下，在导电层上设置辅助导电层(1034)，提高了导通能力，保证信号的正常传输。

Description

传感器及其制造方法、电子设备
本专利申请要求于2016年4月15日递交的中国专利申请第201610236910.9号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
技术领域
本公开的实施例涉及一种传感器及其制造方法、电子设备。
背景技术
光电传感器具有精度高、反应快、非接触、结构简单等优点，其在检测和控制中应用非常广泛。例如，光电传感器可应用于烟尘监测仪、条形码扫描枪、产品计数器、光电式烟雾报警器等方面。
光电传感器包括薄膜晶体管和光电二极管，光电二极管接收光并将光信号转化为电信号，通过薄膜晶体管控制电信号的读取。
发明内容
本公开的实施例提供一种传感器，包括：衬底基板；薄膜晶体管，设置在所述衬底基板上，所述薄膜晶体管包括源极；第一绝缘层，设置在所述薄膜晶体管上，所述第一绝缘层中设置有贯穿所述第一绝缘层的第一过孔；导电层，设置于所述第一过孔中和部分所述第一绝缘层上并通过所述第一过孔与所述源极电连接；偏压电极，设置于所述第一绝缘层上且与所述导电层分离；传感有源层，分别与所述导电层和所述偏压电极连接；以及辅助导电层，设置于所述导电层上。
例如，在本公开实施例提供的传感器中，所述辅助导电层与所述传感有源层相分离。
例如，在本公开实施例提供的传感器中，所述辅助导电层为金属氧化物导电层。
例如，在本公开实施例提供的传感器中，所述辅助导电层为氧化铟锡 (ITO)层或氧化铟锌(IZO)层。
例如，在本公开实施例提供的传感器中，所述辅助导电层与所述导电层直接接触。
例如，在本公开实施例提供的传感器中，所述传感有源层上设置有第二绝缘层。
例如，在本公开实施例提供的传感器中，所述导电层为金属导电层。
例如，在本公开实施例提供的传感器中，所述导电层的厚度为10纳米到100纳米。
例如，本公开实施例提供的传感器，还包括钝化层，所述钝化层中设置有第二过孔，其中，在垂直于所述衬底基板的方向上，所述钝化层设置于所述源极与所述第一绝缘层之间，所述第二过孔贯穿所述钝化层并与所述第一过孔连通，所述导电层通过所述第一过孔和所述第二过孔与所述源极电连接。
例如，在本公开实施例提供的传感器中，所述第二过孔的最大孔径小于所述第一过孔的最小孔径。
例如，本公开实施例提供的传感器，还包括屏蔽金属层，所述屏蔽金属层中设置有第三过孔，其中，所述屏蔽金属层设置于所述钝化层和所述第一绝缘层之间，所述第三过孔贯穿所述屏蔽金属层并与所述第一过孔和所述第二过孔连通，所述导电层通过所述第一过孔、所述第二过孔和所述第三过孔与所述源极电连接。
例如，在本公开实施例提供的传感器中，所述屏蔽金属层在所述衬底基板上的投影与所述薄膜晶体管的有源层在所述衬底基板上的投影至少部分交叠。
例如，在本公开实施例提供的传感器中，所述第三过孔的最大孔径小于所述第一过孔的最小孔径，所述第三过孔的最小孔径大于所述第二过孔的最大孔径。
例如，在本公开实施例提供的传感器中，所述导电层至少设置在第一过孔、第二过孔和第三过孔的侧壁上，所述导电层的至少位于所述侧壁的部分被所述辅助导电层完全覆盖。
例如，在本公开实施例提供的传感器中，所述第一绝缘层的厚度为1微米到4微米。
本公开的实施例还提供一种电子设备，包括本公开实施例任一项所述的传感器。
本公开的实施例还提供一种传感器的制造方法，包括：在衬底基板上形成薄膜晶体管，所述薄膜晶体管包括源极；在所述薄膜晶体管上形成第一绝缘层，所述第一绝缘层中设置有第一过孔；在所述第一过孔中和部分所述第一绝缘层上形成导电层，所述导电层通过所述第一过孔与所述源极电连接；在所述第一绝缘层上形成与所述导电层相分离的偏压电极以及传感有源层，所述传感有源层分别与所述导电层和所述偏压电极连接；以及在所述导电层上形成辅助导电层。
例如，本公开实施例提供的传感器的制造方法，还包括，在所述传感有源层上形成第二绝缘层。
例如，本公开实施例提供的传感器的制造方法，还包括，在所述源极与所述第一绝缘层之间形成钝化层，所述钝化层中设置有与所述第一过孔连通的第二过孔，形成通过所述第一过孔和所述第二过孔与所述源极电连接的导电层。
例如，本公开实施例提供的传感器的制造方法，还包括，在所述钝化层和所述第一绝缘层之间形成屏蔽金属层，所述屏蔽金属层中设置有与所述第一过孔和所述第二过孔连通的第三过孔，形成通过所述第一过孔、所述第二过孔和所述第三过孔与所述源极电连接的导电层。
本公开实施例提供的传感器及其制造方法，在不增加工序的情况下，在较薄的导电层上设置辅助导电层，提高了导通能力，保证信号的正常传输。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为本公开实施例提供的一种传感器的截面图；
图2为本公开实施例提供的一种传感器中部分结构的截面图；
图3为本公开实施例提供的一种传感器的制造方法的流程图；以及
图4A-4L为本公开实施例提供的一种传感器的制造方法的示意图。
附图标记
100-传感器；101-衬底基板；102-薄膜晶体管；1021-栅极；1022-栅绝缘层；1023-有源层；1024-漏极；1025-源极；1031-导电层；1032-偏压电极；1033-传感有源层；1034-辅助导电层；1035-间隔绝缘层；1036-第二绝缘层；104-钝化层；105-屏蔽金属层；106-第一绝缘层；1071-第一过孔；1072-第二过孔；1073-第三过孔；L1-第一过孔的最小孔径；L2-第二过孔的最大孔径；L3-第三过孔的最大孔径；L4-第三过孔的最小孔径；F1-第一台阶；F2-第二台阶。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在相关技术中，传感器为了获得更好的信噪比，通常设置有较厚的绝缘层，而传输信号的导电层为了减少可能漏电的面积、减少漏电流、降低杂讯，其厚度通常较薄。绝缘层在烘烤成型时因材料收缩，其侧壁的坡度变大，设置在绝缘层侧壁上的导电层容易因为坡度较大而断裂，产生导通不良的问题。
本公开实施例提供的传感器及其制造方法，在不增加工序的情况下，在较薄的导电层上设置辅助导电层，提高了导通能力，保证信号的正常传输。
图1为本公开实施例提供的一种传感器的截面图，如图1所示，本公开的实施例提供一种传感器100，包括：衬底基板101；薄膜晶体管102，设置在衬底基板101上，薄膜晶体管102包括源极1025、漏极1024、有源层1023、栅极1021和栅绝缘层1022；第一绝缘层106，设置在薄膜晶体管102上，第一绝缘层106中设置有贯穿第一绝缘层106的第一过孔1071；偏压电极1032，设置于第一绝缘层106上且与导电层1031分离；传感有源层1033，分别与导电层1031和偏压电极1032连接；以及辅助导电层1034，设置于导电层1031上。
例如，传感器100还可以包括钝化层104，钝化层104中设置有第二过孔1072，在垂直于衬底基板的方向上，钝化层104设置于源极1025与第一绝缘层106之间，第二过孔1072贯穿钝化层104并与第一过孔1071连通。
例如，传感器100还可以包括屏蔽金属层105，屏蔽金属层105中设置有第三过孔1073，屏蔽金属层105设置于钝化层104和第一绝缘层106之间，第三过孔1073贯穿屏蔽金属层105并与第一过孔1071和第二过孔1072连通，导电层1031通过第一过孔1071、第二过孔1072和第三过孔1073与源极1025电连接。
例如，偏压电极1032与导电层1031分离是指偏压电极1032与导电层1031没有直接接触。例如，在本公开实施例提供的传感器100中，导电层1031和偏压电极1032之间设置有间隔绝缘层1035。又例如，导电层1031和偏压电极1032之间设置有传感有源层1033。在一些示例中，也可以不设置间隔绝缘层1035，导电层1031和偏压电极1032之间填充用于形成传感有源层1033的材料。
例如，偏压电极1032被施加高电压，高电压的范围例如为100伏到300伏，又例如，高电压的范围例如为150伏到200伏。例如，偏压电极1032的材料可以为钼、铝、铜等导电金属或由它们任意组合形成的合金；偏压电极1032的材料也可以为ITO、AZO、IZO、导电树脂、石墨烯薄膜、碳纳米管薄膜等导电材料。
例如，也可以是在导电层1031上设置传感有源层1033，在传感有源层1033上设置偏压电极1032。此时，为了保证传感有源层1033能够接受光照，该偏压电极1032应该为透明的导电材料，例如，ITO、IZO、AZO、导电树 脂、石墨烯薄膜、碳纳米管薄膜等。
例如，传感有源层1033为非晶硅半导体层。
例如，屏蔽金属层105可以起到屏蔽的作用，防止屏蔽金属层105两侧电场的相互串扰。例如，屏蔽金属层105可以屏蔽导电层1031中的电场在漏极1024、源极1025和与漏极1024连接的数据线上产生的感应电流，提高信噪比。
例如，屏蔽金属层105可由多个彼此分离的部分组成，部分屏蔽金属层可被施加稳定电压提高屏蔽效果。
例如，在本公开实施例提供的传感器100中，屏蔽金属层105在衬底基板101上的投影与薄膜晶体管102的有源层1023在衬底基板101上的投影至少部分交叠。由于光照会影响薄膜晶体管的开关特性，所以需要对薄膜晶体管的有源层1023遮光，屏蔽金属层105在衬底基板101上的投影与薄膜晶体管102的有源层1023在衬底基板101上的投影至少部分交叠设置，屏蔽金属层105可以为薄膜晶体管102的有源层1023遮光，防止外界光线对薄膜晶体管的影响。
例如，在本公开实施例提供的传感器100中，辅助导电层1034与传感有源层1033相分离。即辅助导电层1034与传感有源层1033没有直接接触，以免产生漏电杂讯。
例如，在本公开实施例提供的传感器100中，辅助导电层1034为金属氧化物导电层。
例如，在本公开实施例提供的传感器100中，辅助导电层1034为氧化铟锡(ITO)层或氧化铟锌(IZO)层。例如，辅助导电层1034与导电层1031直接接触。
例如，当导电层1031断裂时，辅助导电层1034可以辅助导电层1031的导通，以保证信号的正常传输。
例如，为保证周边区的引线电极不被氧化，需要在周边电极上设置抗氧化导电保护层，辅助导电层1034与抗氧化导电保护层可以利用同一种材料(例如ITO)同层形成，所以在导电层1031上设置辅助导电层1034并没有多出额外的工序。例如，传感器中的数据线与集成电路(IC)通过引线电极连接，需要在该引线电极上设置抗氧化保护层，以防止该引线电极被氧化， 辅助导电层1034与该抗氧化导电保护层可以由同一种材料(例如ITO)同层形成，所以不需要增加额外的工序。
例如，在本公开实施例提供的传感器100中，传感有源层1033上设置有第二绝缘层1036。第二绝缘层1036可以起到保护传感有源层的作用。
例如，在本公开实施例提供的传感器100中，导电层1031为金属导电层。
例如，导电层1031可由钼、铝、铜等金属中的任意一种或其合金制成。
例如，在本公开实施例提供的传感器100中，导电层1031的厚度为10纳米到100纳米。又例如，导电层1031的厚度为30纳米到70纳米。
例如，第一绝缘层106、间隔绝缘层1035、第二绝缘层1036可以是有机绝缘层，如有机树脂等；也可以是无机绝缘层，如氮化硅、氧化硅等。
例如，在本公开实施例提供的传感器100中，第一绝缘层106的厚度为1微米到4微米。又例如，第一绝缘层106的厚度为2微米到3微米。由于偏压电极1032被施加的电压较高，设置较厚的第一绝缘层106可以减小偏压电极1032的电场对例如薄膜晶体管102源极1025的干扰。同时，高厚度的绝缘层也可以起到平坦化的作用，便于后续工艺的实施。
例如，图2为本公开实施例提供的一种传感器中部分结构的截面图，如图二所示，在本公开实施例提供的传感器100中，第三过孔1073的最大孔径L3小于第一过孔1071的最小孔径L1，第三过孔1073的最小孔径L4大于第二过孔1072的最大孔径L2。从而在钝化层104和屏蔽金属层105之间形成第一台阶F1，在屏蔽金属层105和绝缘层106之间形成第二台阶F2。第一台阶F1、第二台阶F2使第一过孔1071、第二过孔1072和第三过孔1073的侧壁变得平缓，有利于导电层1031的形成，防止导电层1031断裂。
例如，在本公开实施例提供的传感器100中，导电层1031至少设置在第一过孔1071、第二过孔1072和第三过孔1073的侧壁上，导电层1031的至少位于侧壁的部分被辅助导电层1034完全覆盖。
例如，钝化层104可以起到平坦化的作用，并且使屏蔽金属层105与薄膜晶体管102绝缘，减小钝化层104两侧电场之间的干扰，提高信噪比。
例如，衬底基板101例如为玻璃基板和石英基板。
例如，传感器100可以包括绝缘层106，但不包括屏蔽金属层105和钝化层104，这种情况下，导电层1031设置于第一过孔1071中和部分第一绝 缘层106上并通过第一过孔1071与源极1025电连接。例如，在这种情况下，导电层1031至少设置在第一过孔1071的侧壁上，导电层1031的至少位于侧壁的部分被辅助导电层1034完全覆盖。
例如，传感器100可以包括绝缘层106和钝化层104，但不包括屏蔽金属层105，此时，导电层1031设置于第一过孔1071中、第二过孔1072中及部分第一绝缘层106上并通过第一过孔1071和第二过孔1072与源极1025电连接。例如，在这种情况下，第二过孔1072的最大孔径L2小于第一过孔1071的最小孔径L1。导电层1031至少设置在第一过孔1071和第二过孔1072的侧壁上，导电层1031的至少位于侧壁的部分被辅助导电层1034完全覆盖。
本公开实施例提供的传感器例如为光电传感器，但不仅限于光电传感器，也可为其它利用电流传输信号的传感器。
本公开的实施例还提供一种电子设备，包括本公开实施例任一项的传感器。
本公开的实施例还提供一种传感器的制造方法，包括：在衬底基板上形成薄膜晶体管，薄膜晶体管包括源极；在薄膜晶体管上形成第一绝缘层，第一绝缘层中设置有第一过孔；在第一过孔中和部分第一绝缘层上形成导电层，导电层通过第一过孔与源极电连接；在绝缘层上形成与导电层相分离的偏压电极以及传感有源层，传感有源层分别与导电层和偏压电极连接；以及在导电层上形成辅助导电层。
例如，本公开实施例提供的传感器的制造方法，还包括，在导电层和偏压电极之间形成间隔绝缘层。
例如，本公开实施例提供的传感器的制造方法，还包括，在传感有源层上形成第二绝缘层。
例如，本公开实施例提供的传感器的制造方法，还包括，在源极与第一绝缘层之间形成钝化层，钝化层中设置有与第一过孔连通的第二过孔，形成通过第一过孔和第二过孔与源极电连接的导电层。
例如，本公开实施例提供的传感器的制造方法，还包括，在钝化层和第一绝缘层之间形成屏蔽金属层，屏蔽金属层中设置有与第一过孔和第二过孔连通的第三过孔，形成通过第一过孔、第二过孔和第三过孔与源极电连接的导电层。
例如，图3为本公开实施例提供的一种传感器的制造方法的流程图，图4A-4L为本公开实施例提供的一种传感器的制造方法的示意图。该制造方法可以包括如下步骤：
步骤S01：如图4A-4D所示，在衬底基板101上形成薄膜晶体管102；例如包括：
步骤S011：如图4A所示，在衬底基板上形成栅极1021；
步骤S012：如图4B所示，在栅极1021上形成栅绝缘层1022；
步骤S013：如图4C所示，在栅绝缘层1022上形成有源层1023；
步骤S014：如图4D所示，在有源层1023上形成源极1025和漏极1024。
步骤S02：如图4E所示，在薄膜晶体管102上形成钝化层104，钝化层104中设置有第二过孔1072；
步骤S03：如图4F所示，在钝化层104上形成屏蔽金属层105，屏蔽金属层105中设置有与第二过孔1072连通的第三过孔1073；
步骤S04：如图4G所示，在屏蔽金属层105上形成第一绝缘层106，第一绝缘层106中设置有与第三过孔1073连通的第一过孔1071；
步骤S05：如图4H所示，在第一过孔1071中、第二过孔1072中、第三过孔1073中和部分第一绝缘层106上形成导电层1031，导电层1031通过第一过孔1071、第二过孔1072和第三过孔1073与源极1025电连接；
步骤S06：如图4H所示，在第一绝缘层106上形成与导电层1031相分离的偏压电极1032；
步骤S07：如图4I所示，在导电层1031和偏压电极1032之间形成间隔绝缘层1035；
步骤S08：如图4J所示，形成传感有源层1033，传感有源层1033分别与导电层1031和偏压电极1032连接；
步骤S09：如图4K所示，在传感有源层1033上形成第二绝缘层1036；以及
步骤S10：如图4L所示，在导电层1031上形成辅助导电层1034。
例如，为保证周边区的引线电极不被氧化，需要在周边电极上设置抗氧化导电保护层，辅助导电层1034与抗氧化导电保护层可以利用同一种材料(例如ITO)同层形成，所以在导电层1031上设置辅助1034并没有多出额 外的工序。例如，传感器中的数据线与集成电路(IC)通过引线电极连接，需要在该引线电极上设置抗氧化保护层，以防止该引线电极被氧化，辅助导电层1034与该抗氧化导电保护层可以由同一种材料(例如ITO)同层形成，所以不需要增加额外的工序。
例如，每个步骤中均包括沉积(或溅射)、清洗、光刻胶涂覆、曝光、显影、刻蚀、光刻胶去除(例如，剥离)等工艺。
例如，栅极1025可以由Cr、W、Ti、Ta、Mo、Al、Cu中任一种金属或其合金制成。
例如，栅绝缘层1022可以由SiNx或SiOx制成。
例如，有源层1023和传感有源层1033可以由非晶硅制成。
例如，源极1025和漏极可以由铝钕(AlNd)合金、钨钼合金(WMo)，铝(Al)、铜(Cu)、钼(Mo)或铬(Cr)中的任一种或其组合制成。
例如，钝化层104可以由氮化硅或氧化硅制成。
例如，屏蔽金属层105可以由钼、铝、铜中任一种金属或其合金制成。
例如，第一绝缘层106、间隔绝缘层1035、第二绝缘层1036可以由有机树脂、氮化硅或氧化硅制成。
例如，导电层1031可由钼、铝、铜等金属中的任意一种或其合金制成。
例如，辅助导电层1034可以由氧化铟锡(ITO)或氧化铟锌(IZO)制成。
例如，偏压电极1032的材料可以为钼、铝、铜等导电金属或由它们任意组合形成的合金；偏压电极1032的材料也可以为ITO、AZO、IZO、导电树脂、石墨烯薄膜、碳纳米管薄膜等导电材料。
本公开实施例提供的传感器及其制造方法，在不增加工序的情况下，在较薄的导电层上设置辅助导电层，提高了导通能力，保证信号的正常传输。
需要说明的是，为表示清楚，本公开的实施例及附图并没有给出传感器和电子设备的全部结构。为实现传感器和电子设备的必要功能，本领域技术人员可以根据具体应用场景并参考通常设计设置其他未示出的结构，本公开对此不做限制。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (20)

  1. 一种传感器，包括：
    衬底基板；
    薄膜晶体管，设置在所述衬底基板上，所述薄膜晶体管包括源极；
    第一绝缘层，设置在所述薄膜晶体管上，所述第一绝缘层中设置有贯穿所述第一绝缘层的第一过孔；
    导电层，设置于所述第一过孔中和部分所述第一绝缘层上并通过所述第一过孔与所述源极电连接；
    偏压电极，设置于所述第一绝缘层上且与所述导电层分离；
    传感有源层，分别与所述导电层和所述偏压电极连接；以及
    辅助导电层，设置于所述导电层上。
  2. 根据权利要求1所述的传感器，其中，所述辅助导电层与所述传感有源层相分离。
  3. 根据权利要求1或2所述的传感器，其中，所述辅助导电层为金属氧化物导电层。
  4. 根据权利要求1-3任一项所述的传感器，其中，所述辅助导电层为氧化铟锡(ITO)层或氧化铟锌(IZO)层。
  5. 根据权利要求1-4任一项所述的传感器，其中，所述辅助导电层与所述导电层直接接触。
  6. 根据权利要求1-5任一项所述的传感器，其中，所述传感有源层上设置有第二绝缘层。
  7. 根据权利要求1-6中任一项所述的传感器，其中，所述导电层为金属导电层。
  8. 根据权利要求1-7中任一项所述的传感器，其中，所述导电层的厚度为10纳米到100纳米。
  9. 根据权利要求1-8中任一项所述的传感器，还包括钝化层，所述钝化层中设置有第二过孔，其中，在垂直于所述衬底基板的方向上，所述钝化层设置于所述源极与所述第一绝缘层之间，所述第二过孔贯穿所述钝化层并与所述第一过孔连通，所述导电层通过所述第一过孔和所述第二过孔与所述源 极电连接。
  10. 根据权利要求9所述的传感器，其中，所述第二过孔的最大孔径小于所述第一过孔的最小孔径。
  11. 根据权利要求9或10所述的传感器，还包括屏蔽金属层，所述屏蔽金属层中设置有第三过孔，其中，所述屏蔽金属层设置于所述钝化层和所述第一绝缘层之间，所述第三过孔贯穿所述屏蔽金属层并与所述第一过孔和所述第二过孔连通，所述导电层通过所述第一过孔、所述第二过孔和所述第三过孔与所述源极电连接。
  12. 根据权利要求11所述的传感器，其中，所述屏蔽金属层在所述衬底基板上的投影与所述薄膜晶体管的有源层在所述衬底基板上的投影至少部分交叠。
  13. 根据权利要求11或12所述的传感器，其中，所述第三过孔的最大孔径小于所述第一过孔的最小孔径，所述第三过孔的最小孔径大于所述第二过孔的最大孔径。
  14. 根据权利要求11-13任一项所述的传感器，其中，所述导电层至少设置在第一过孔、第二过孔和第三过孔的侧壁上，所述导电层的至少位于所述侧壁的部分被所述辅助导电层完全覆盖。
  15. 根据权利要求1-14中任一项所述的传感器，其中，所述第一绝缘层的厚度为1微米到4微米。
  16. 一种电子设备，包括权利要求1-15中任一项所述的传感器。
  17. 一种传感器的制造方法，包括：
    在衬底基板上形成薄膜晶体管，所述薄膜晶体管包括源极；
    在所述薄膜晶体管上形成第一绝缘层，所述第一绝缘层中设置有第一过孔；
    在所述第一过孔中和部分所述第一绝缘层上形成导电层，所述导电层通过所述第一过孔与所述源极电连接；
    在所述第一绝缘层上形成与所述导电层相分离的偏压电极以及传感有源层，所述传感有源层分别与所述导电层和所述偏压电极连接；以及
    在所述导电层上形成辅助导电层。
  18. 根据权利要求17所述的传感器的制造方法，还包括，在所述传感有 源层上形成第二绝缘层。
  19. 根据权利要求17-18中任一项所述的传感器的制造方法，还包括，在所述源极与所述第一绝缘层之间形成钝化层，所述钝化层中设置有与所述第一过孔连通的第二过孔，形成通过所述第一过孔和所述第二过孔与所述源极电连接的导电层。
  20. 根据权利要求19所述的传感器的制造方法，还包括，在所述钝化层和所述第一绝缘层之间形成屏蔽金属层，所述屏蔽金属层中设置有与所述第一过孔和所述第二过孔连通的第三过孔，形成通过所述第一过孔、所述第二过孔和所述第三过孔与所述源极电连接的导电层。
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