WO2017163633A1 - Appareil de nettoyage de substrat - Google Patents

Appareil de nettoyage de substrat Download PDF

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Publication number
WO2017163633A1
WO2017163633A1 PCT/JP2017/004254 JP2017004254W WO2017163633A1 WO 2017163633 A1 WO2017163633 A1 WO 2017163633A1 JP 2017004254 W JP2017004254 W JP 2017004254W WO 2017163633 A1 WO2017163633 A1 WO 2017163633A1
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WO
WIPO (PCT)
Prior art keywords
substrate
brush
unit
cleaning
liquid
Prior art date
Application number
PCT/JP2017/004254
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English (en)
Japanese (ja)
Inventor
天野　嘉文
優樹 伊藤
健人 久留巣
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to JP2018507105A priority Critical patent/JP6671459B2/ja
Priority to CN201780019840.4A priority patent/CN108885985B/zh
Priority to KR1020187026598A priority patent/KR102629296B1/ko
Publication of WO2017163633A1 publication Critical patent/WO2017163633A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

Definitions

  • the disclosed embodiment relates to a substrate cleaning apparatus.
  • a substrate cleaning apparatus for cleaning a substrate is known (Patent Document 1).
  • An object of one embodiment of the present invention is to provide a substrate cleaning apparatus that can suppress scattering of a processing solution.
  • a substrate cleaning apparatus is a substrate cleaning apparatus that cleans a substrate using a brush, and includes a substrate holding unit, an arm, and a supply unit.
  • the substrate holding unit holds the substrate rotatably.
  • the arm rotatably supports the brush via the spindle.
  • the supply unit supplies the processing liquid to the substrate.
  • the brush includes a main body, a cleaning body, and a liquid receiving member.
  • the main body is connected to the spindle.
  • the cleaning body is provided at the lower portion of the main body and is pressed against the substrate.
  • the liquid receiving member is provided on the outer peripheral portion of the main body portion and protrudes from the outer peripheral portion of the main body portion.
  • FIG. 1 is a schematic plan view of a substrate processing system according to an embodiment.
  • FIG. 2 is a schematic side view of the substrate processing system according to the embodiment.
  • FIG. 3 is a schematic plan view of the second processing block.
  • FIG. 4 is a schematic plan view of the second processing unit.
  • FIG. 5 is a schematic side view of the second processing unit.
  • FIG. 6 is a schematic side view of the back brush.
  • FIG. 7 is a diagram illustrating a relationship between the liquid receiving member and the peripheral wall portion.
  • FIG. 8 is a schematic side sectional view of the back surface cleaning unit.
  • FIG. 9 is a schematic perspective view of the guide member.
  • FIG. 10 is a schematic perspective view of the back brush.
  • FIG. 11 is a schematic side view of the accommodating portion.
  • FIG. 12 is a flowchart showing the processing procedure of the back surface cleaning processing.
  • FIG. 13 is a diagram illustrating a positional relationship between the back brush and the first supply unit.
  • FIG. 14 is a schematic plan view of the first processing unit.
  • FIG. 15A is a schematic side view of the accommodating portion.
  • FIG. 15B is a schematic side view of the accommodating portion.
  • FIG. 15C is a schematic side view of the accommodating portion.
  • FIG. 1 is a schematic plan view of a substrate processing system 1 according to the embodiment.
  • FIG. 2 is a schematic side view of the substrate processing system 1 according to the embodiment.
  • the X axis, the Y axis, and the Z axis that are orthogonal to each other are defined, and the positive direction of the Z axis is the vertically upward direction.
  • the substrate processing system 1 includes a carry-in / out block 2, a processing block 3, and a delivery block 4. These are arranged in the order of the carry-in / out block 2, the delivery block 4 and the processing block 3.
  • the substrate processing system 1 transports the substrate loaded from the loading / unloading block 2, in this embodiment, a semiconductor wafer (hereinafter referred to as wafer W) to the processing block 3 via the delivery block 4, and processes it in the processing block 3. Further, the substrate processing system 1 returns the processed wafer W from the processing block 3 to the loading / unloading block 2 via the delivery block 4, and pays out from the loading / unloading block 2 to the outside.
  • wafer W a semiconductor wafer
  • the carry-in / out block 2 includes a placement unit 11 and a transport unit 12. A plurality of cassettes C that accommodate a plurality of wafers W in a horizontal state are placed on the placement unit 11.
  • the transport unit 12 is disposed adjacent to the placement unit 11 and includes a main transport device 13 therein.
  • the main transfer device 13 transfers the wafer W between the placement unit 11 and the delivery block 4.
  • the processing block 3 includes a first processing block 3U and a second processing block 3L.
  • the first processing block 3U and the second processing block 3L are spatially partitioned by a partition wall, a shutter, and the like, and are arranged side by side in the height direction.
  • the first processing block 3U is arranged on the upper stage side
  • the second processing block 3L is arranged on the lower stage side.
  • first processing block 3U processing is performed on the wafer W with the circuit formation surface (hereinafter referred to as “front surface”) facing upward.
  • second processing block 3L processing is performed on the wafer W in a state where the back surface, which is the surface opposite to the front surface, faces upward.
  • the first processing block 3 ⁇ / b> U includes a transport unit 16, a first transport device 17, and a plurality of first processing units 18.
  • the first transport device 17 is disposed inside the transport unit 16, and the plurality of first processing units 18 are disposed adjacent to the transport unit 16 outside the transport unit 16.
  • the first transfer device 17 transfers the wafer W between the delivery block 4 and the first processing unit 18. Specifically, the first transfer device 17 takes out the wafer W from the delivery block 4 and transfers it to the first processing unit 18, and the wafer W processed by the first processing unit 18 from the first processing unit 18. The process of taking out and carrying to the delivery block 4 is performed.
  • the first processing unit 18 performs a bevel cleaning process on the wafer W with the front surface facing upward.
  • the bevel cleaning process is a process for removing particles, boat traces, and the like attached to the peripheral portion (bevel portion) of the wafer W.
  • the first processing unit 18 includes a suction holding unit that rotatably holds the wafer W, and a bevel cleaning unit that physically cleans the peripheral portion of the wafer W by bringing a brush into contact with the peripheral portion of the wafer W. And a discharge unit that discharges the chemical toward the peripheral edge of the wafer W.
  • the first processing unit 18 rotates the wafer W in a state where the back surface of the wafer W with the front surface facing upward is sucked and held by the suction holding unit.
  • the first processing unit 18 causes the brush of the bevel cleaning unit to contact the peripheral portion of the wafer W while discharging the chemical solution from the discharge unit toward the peripheral portion of the back surface of the rotating wafer W. Remove particles and the like adhering to the periphery. In this way, by combining chemical cleaning with a chemical solution and physical cleaning with a brush, the removal performance of particles, boat traces, and the like can be enhanced.
  • FIG. 3 is a schematic plan view of the second processing block 3L.
  • the second processing block 3 ⁇ / b> L includes a transport unit 26, a second transport device 27, and a plurality of second processing units 28.
  • the second transport device 27 is disposed inside the transport unit 26, and the plurality of second processing units 28 are disposed adjacent to the transport unit 26 outside the transport unit 26.
  • the second transfer device 27 transfers the wafer W between the delivery block 4 and the second processing unit 28. Specifically, the second transfer device 27 takes out the wafer W from the delivery block 4 and transfers it to the second processing unit 28, and the wafer W processed by the second processing unit 28 from the second processing unit 28. The process of taking out and carrying to the delivery block 4 is performed.
  • the second processing unit 28 performs a back surface cleaning process for removing particles and the like attached to the back surface of the wafer W with respect to the wafer W with the back surface facing upward.
  • FIG. 4 is a schematic plan view of the second processing unit 28.
  • FIG. 5 is a schematic side view of the second processing unit 28.
  • the second processing unit 28 includes a chamber 201, a substrate holding unit 202, a recovery cup 203, a back surface cleaning unit 204, a first supply unit 205, and a second supply unit 206. And a peripheral wall portion 207.
  • the chamber 201 accommodates the substrate holding part 202, the recovery cup 203, the back surface cleaning part 204, the first supply part 205, the second supply part 206, and the peripheral wall part 207.
  • An FFU (Fun Filter Unit) 211 that forms a downflow in the chamber 201 is provided at the ceiling of the chamber 201.
  • the substrate holding unit 202 rotates the main body 221 having a diameter larger than that of the wafer W, a plurality of gripping parts 222 provided on the upper surface of the main body 221, a support member 223 that supports the main body 221, and the support member 223.
  • a driving unit 224 is provided.
  • the number of gripping portions 222 is not limited to that shown in the figure.
  • the substrate holding unit 202 holds the wafer W by holding the peripheral edge of the wafer W using the plurality of holding units 222. As a result, the wafer W is held horizontally while being slightly separated from the upper surface of the main body 221.
  • the back surface cleaning process is performed on the wafer W with the back surface facing upward, in other words, the front surface facing downward.
  • the second processing unit 28 uses a type that adsorbs the wafer W, such as the suction holding unit of the first processing unit 18, the front surface that is a circuit forming surface may be stained.
  • a substrate holding unit 202 that grips the peripheral edge of the wafer W is used so as not to stain the circuit forming surface as much as possible.
  • the collection cup 203 is arranged so as to surround the substrate holding unit 202.
  • a liquid outlet 231 for discharging the chemical liquid discharged from the first supply unit 205 and the second supply unit 206 to the outside of the chamber 201, and for exhausting the atmosphere in the chamber 201
  • An exhaust port 232 is formed.
  • the second processing unit 28 may include a mechanism for switching between a discharge destination of the chemical liquid discharged from the first supply unit 205 and a discharge destination of the chemical liquid discharged from the second supply unit 206.
  • the back surface cleaning unit 204 extends in the horizontal direction (here, the Y-axis direction) with the back surface brush 241, and supports the back surface brush 241 to be rotatable from above via the spindle 242, and swivels the arm 243. And a swivel lifting mechanism 244 for moving up and down.
  • the back surface cleaning unit 204 is connected to the first chemical liquid supply source 245a via a valve 244a, a flow rate regulator (not shown) or the like, and supplied with a second chemical liquid via the valve 244b, a flow rate regulator (not shown) or the like. Connected to source 245b.
  • the back surface cleaning unit 204 is connected to the rinse liquid supply source 245c via a valve 244c, a flow rate regulator (not shown), or the like.
  • the back surface cleaning unit 204 is a first chemical liquid supplied from the first chemical liquid supply source 245a, a second chemical liquid supplied from the second chemical liquid supply source 245b, or a rinse liquid supplied from the rinse liquid supply source 245c (here, pure liquid) Water) can be discharged from the inside of the back brush 241 toward the wafer W.
  • a specific configuration of the back surface cleaning unit 204 will be described later.
  • the first chemical solution is SC-1 (mixed solution of ammonia, hydrogen peroxide and water) and the second chemical solution is DHF (dilute hydrofluoric acid).
  • the second chemical solution is not limited to DHF.
  • the first supply unit 205 is disposed outside the peripheral wall unit 207.
  • the first supply unit 205 includes a nozzle 251, a nozzle arm 252 that extends in the horizontal direction and supports the nozzle 251 from above, and a turning lift mechanism 253 that turns and lifts the nozzle arm 252.
  • the nozzle 251 is connected to the first chemical liquid supply source 255a via a valve 254a, a flow rate regulator (not shown), or the like.
  • the nozzle 251 is connected to the rinse liquid supply source 255b via a valve 254b, a flow rate regulator (not shown), and the like.
  • the first supply unit 205 discharges the first chemical supplied from the first chemical supply source 255a toward the wafer W.
  • the first supply unit 205 discharges pure water supplied from the rinse liquid supply source 255b toward the wafer W.
  • the second supply unit 206 is disposed outside the peripheral wall unit 207.
  • the second supply unit 206 includes a nozzle 261, a nozzle arm 262 that extends in the horizontal direction and supports the nozzle 261 from above, and a turning lift mechanism 263 that turns and lifts the nozzle arm 262.
  • the nozzle 261 is connected to the second chemical liquid supply source 265a via a valve 264a, a flow rate regulator (not shown), or the like.
  • the nozzle 261 is connected to the rinse liquid supply source 265b via a valve 264b, a flow rate regulator (not shown), and the like.
  • the second supply unit 206 discharges the second chemical solution supplied from the second chemical solution supply source 265a toward the wafer W.
  • the second supply unit 206 discharges pure water supplied from the rinse liquid supply source 265b toward the wafer W.
  • the peripheral wall portion 207 is disposed outside the collection cup 203 so as to surround the substrate holding portion 202, and receives processing liquids such as a first chemical solution, a second chemical solution, and pure water scattered from the substrate holding portion 202.
  • the peripheral wall portion 207 is connected to the lifting mechanism 271 and can be moved in the vertical direction by the lifting mechanism 271. That is, the peripheral wall portion 207 is configured to be able to change the height.
  • the second processing unit 28 is configured as described above, and rotates by holding the peripheral portion of the wafer W with the back surface facing upward by the substrate holding portion 202. Then, the second processing unit 28 removes particles and the like attached to the back surface of the wafer W using either the first supply unit 205 or the second supply unit 206 and the back surface cleaning unit 204.
  • the back surface brush 241 of the back surface cleaning unit 204, the nozzle 251 of the first supply unit 205, and the nozzle 261 of the second supply unit 206 are retracted from the main body 221.
  • a position is provided.
  • accommodating portions 208a to 208c for accommodating the back brush 241, the nozzle 251 and the nozzle 261 are provided.
  • the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206 are disposed at the retreat positions, and the back surface brush 241, the nozzle 251 and the nozzle 261 are stored in the storage units 208a to 208c, respectively. It shows how it is.
  • ⁇ Configuration of delivery block 4> Next, the delivery block 4 will be described. As shown in FIGS. 1 and 2, inside the delivery block 4, a plurality of transfer devices 15a and 15b, a first buffer unit 21U, a second buffer unit 21L, a first delivery unit 22U, 2 delivery part 22L, the 1st inversion mechanism 23a, and the 2nd inversion mechanism 23b are arrange
  • the first buffer unit 21U, the second buffer unit 21L, the first delivery unit 22U, the second delivery unit 22L, the first reversing mechanism 23a, and the second reversing mechanism 23b are arranged side by side in the height direction. Specifically, the first delivery unit 22U, the first buffer unit 21U, the second buffer unit 21L, the second delivery unit 22L, the first reversing mechanism 23a, and the second reversing mechanism 23b are arranged in this order from the top. (See FIG. 2).
  • a buffer part here 1st buffer part 21U and 2nd buffer part 21L
  • a delivery part here 1st delivery part 22U and 2nd delivery part 22L
  • a reverse mechanism here 1st reverse mechanism
  • the number of 23a and the second reversing mechanism 23b) and the arrangement in the height direction are not limited to those illustrated.
  • the delivery unit, the buffer unit, the reversing mechanism, the delivery unit, and the reversing mechanism may be arranged in this order from the top.
  • the transfer devices 15a and 15b are provided with a lifting mechanism (not shown), and the wafer W is moved with respect to the first delivery section 22U and the like arranged in the height direction by moving in the vertical direction using the lifting mechanism. Carry in and out.
  • the transfer device 15a accesses the first delivery unit 22U and the like from the Y axis positive direction side of the first delivery unit 22U and the like.
  • the transfer device 15b accesses the first delivery unit 22U and the like from the Y axis negative direction side of the first delivery unit 22U and the like.
  • the first buffer unit 21U, the second buffer unit 21L, the first delivery unit 22U, and the second delivery unit 22L are modules that can accommodate the wafers W in multiple stages. Among these, the first buffer unit 21U and the second buffer unit 21L are accessed by the main transport device 13 and the transfer devices 15a and 15b.
  • the substrate processing system 1 includes a control device 5 (see FIG. 1).
  • the control device 5 is a computer, for example, and includes a control unit 51 and a storage unit 52.
  • the storage unit 52 stores a program for controlling various processes executed in the substrate processing system 1.
  • the control unit 51 is, for example, a CPU (Central Processing Unit), and controls the operation of the substrate processing system 1 by reading and executing a program stored in the storage unit 52.
  • CPU Central Processing Unit
  • Such a program may be recorded in a computer-readable storage medium and installed in the storage unit 52 of the control device 5 from the storage medium.
  • Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.
  • the control unit 51 may be configured only by hardware without using a program.
  • the main transfer apparatus 13 collects a plurality of unprocessed wafers W from the cassette C and stores them in the first buffer unit 21U.
  • the transfer device 15a takes out the unprocessed wafer W from the first buffer unit 21U and transfers it to the first delivery unit 22U, and the first transfer device 17 of the first processing block 3U receives the first delivery unit 22U.
  • the wafer W is taken out from the wafer W and transferred to the first processing unit 18, and the first processing unit 18 performs a bevel cleaning process on the wafer W.
  • the first transfer device 17 takes out the wafer W after the bevel cleaning process from the first processing unit 18 and accommodates it in the first delivery unit 22U.
  • the transfer device 15a takes out the bevel-cleaned wafer W from the first delivery unit 22U and transfers it to the first reversing mechanism 23a.
  • the first reversing mechanism 23a reverses the front and back of the wafer W
  • the transfer device 15b takes out the wafer W from the first reversing mechanism 23a and transfers it to the second delivery unit 22L.
  • the second transfer device 27 of the second processing block 3L takes out the wafer W from the second delivery unit 22L and transfers it to the second processing unit 28.
  • the second processing unit 28 cleans the back surface of the wafer W. Process.
  • the second transfer device 27 takes out the wafer W that has been subjected to the back surface cleaning process from the second processing unit 28 and accommodates it in the second delivery unit 22L.
  • the transfer device 15b takes out the wafer W from the second delivery unit 22L and transfers it to the second reversing mechanism 23b.
  • the second reversing mechanism 23b reverses the front and back of the wafer W, and the transfer device 15a
  • the wafer W is taken out from the second reversing mechanism 23b and transferred to the second buffer unit 21L, and the main transfer device 13 collects a plurality of wafers W from the second buffer unit 21L after the bevel cleaning process and the back surface cleaning process. Take out and store in cassette C. Thereby, a series of substrate processing is completed.
  • FIG. 6 is a schematic side view of the back brush 241.
  • FIG. 7 is a view showing the relationship between the liquid receiving member and the peripheral wall portion 207.
  • the back surface brush 241 includes a main body portion 101, a connection portion 102, a cleaning body 103, and a liquid receiving member 104.
  • the main body 101 has a cylindrical shape, and is connected to the spindle 242 (see FIG. 4) via the connecting portion 102.
  • the main body 101 includes a first main body 111 and a second main body 112.
  • the first main body 111 and the second main body 112 are cylindrical members having the same diameter, and the main body 101 is formed by attaching the second main body 112 to the lower portion of the first main body 111. .
  • the connecting portion 102 has a cylindrical shape with a smaller diameter than the main body portion 101.
  • the connecting portion 102 is provided in the first main body 111 and protrudes upward from the first main body 111. Further, the connecting portion 102 has an insertion hole 121. By inserting the spindle 242 into the insertion hole 121 and fixing the spindle 242 and the connecting portion 102 with a screw or the like, the main body portion 101 is attached to the spindle 242. Fixed.
  • the cleaning body 103 is provided below the second main body 112 and is pressed against the wafer W.
  • the cleaning body 103 is configured by a large number of hair bundles, but is not limited thereto, and may be configured by, for example, a sponge or the like.
  • the liquid receiving member 104 is provided on the outer peripheral portion of the main body portion 101, specifically, on the outer peripheral portion 112 a of the second main body portion 112.
  • the liquid receiving member 104 has a bowl shape protruding from the outer peripheral part 112 a of the second main body part 112, and the processing liquid passes over the peripheral wall part 207 by receiving the processing liquid scattered from the cleaning body 103 at the lower surface 141. Can be prevented (see FIG. 7). Since the liquid receiving member 104 has a circular shape in plan view, the dispersion of the processing liquid can be suppressed in all directions.
  • the liquid receiving member 104 is disposed above the mounting surface of the cleaning body 103, that is, the lower surface 112b of the second main body 112, and the lower surface 141 of the liquid receiving member 104 is lower than the lower surface 112b of the second main body 112. Is also disposed above. By arranging in this way, it is possible to prevent the liquid receiving member 104 from interfering with other members when the back brush 241 is moved toward the outer peripheral portion of the wafer W in the back surface cleaning process.
  • the lower surface 141 of the liquid receiving member 104 is disposed above the upper end of the gripping part 222 provided in the substrate holding part 202. Further, the lower surface 141 of the liquid receiving member 104 is disposed above the upper end of the recovery cup 203. By arranging in this way, it is possible to prevent the liquid receiving member 104 from interfering with the grip portion 222 and the recovery cup 203. Further, the lower surface 141 of the liquid receiving member 104 may be horizontal in a direction protruding from the outer peripheral portion 112a of the second main body 112, or may be inclined downwardly, at a height that does not contact the gripping portion 222 (see FIG. 5). Also good.
  • the liquid can be further prevented from remaining on the lower surface 141 of the liquid receiving member 104. Furthermore, by making the lower surface 141 of the liquid receiving member 104 hydrophobic, it is possible to prevent the liquid from remaining on the lower surface 141 of the liquid receiving member 104. Further, by making the outer peripheral portion of the main body portion 101 hydrophobic, it is possible to prevent liquid from remaining on the outer peripheral portion of the main body portion 101.
  • the peripheral wall part 207 is disposed at the first height position H1 where the upper end of the peripheral wall part 207 is highest.
  • the liquid receiving member 104 has a diameter that prevents the processing liquid scattered from the cleaning body 103 from exceeding the peripheral wall portion 207 disposed at the first height position H1. As shown in FIG. 7, this diameter is determined based on at least the relationship between the angle with respect to the wafer W that can be taken by the processing liquid scattered from the cleaning body 103 and the first height position H1 of the peripheral wall portion 207. Note that the speed at which the scattered processing liquid can be taken and the position of the cleaning body 103 on the wafer W can also be related to the determination of the diameter.
  • the bowl-shaped upper surface 142 of the liquid receiving member 104 is inclined downward toward the outside. For this reason, it is possible to prevent the processing liquid from remaining on the upper surface 142.
  • the shape of the upper surface 142 does not need to have a constant inclination angle toward the outside as shown in FIG. 6, for example, a multi-stage inclination shape in which the inclination angle is increased stepwise on the way to the outside direction. Alternatively, it may be arcuate with the inclination angle gradually increasing toward the outside.
  • the peripheral wall portion 207 is changed in height position in at least three stages of a first height position H1, a second height position H2, and a third height position H3 in a series of substrate processing.
  • the first height position H1 is a height position at which the peripheral wall portion 207 is disposed when processing using the back surface brush 241 is performed in the back surface cleaning processing.
  • the second height position H2 for example, the peripheral wall portion 207 is disposed when processing with less scattering of the processing liquid is performed as compared with the case where the back surface brush 241 is used, such as processing using only the second supply unit 206.
  • the third height position H3 is an initial position of the peripheral wall portion 207, and is set lower than the second height position H2, for example, at a height position similar to that of the recovery cup 203.
  • the third height position H3 is a height position that interferes with the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206, and the first height position H1 and the second height position H2 are: The height position does not interfere with the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206.
  • FIG. 8 is a schematic side sectional view of the back surface cleaning unit 204.
  • the arm 243 includes a first arm body 246 that extends in the horizontal direction and a second arm body 247 that is provided below the first arm body 246.
  • the first arm body 246 has a drive part 246a such as a motor for rotating the spindle 242, and a first internal space R1 that accommodates a part of the spindle 242.
  • the drive unit 246a and the spindle 242 are connected by, for example, pulleys 246b and 246c and a transmission belt 246d.
  • devices such as a bearing portion 246e and a load cell that rotatably support the spindle 242 are disposed in the first internal space R1.
  • the first internal space R1 is not a complete sealed space.
  • the second arm body 247 communicates the first internal space R1 and the outside through the insertion port 246f of the first arm body 246, and a part of the spindle 242 exposed from the first internal space R1 through the insertion port 246f. Has a second internal space R2.
  • the second internal space R2 has an upper internal space R2a that communicates with the insertion port 246f of the first arm body 246, a lower internal space R2b that communicates with the upper internal space R2a at the upper portion, and communicates with the outside at the lower portion.
  • the upper internal space R2a and the lower internal space R2b are loosely formed by an annular first protrusion 247a protruding toward the second internal space R2 from the inner peripheral surface of the second arm body 247 forming the second internal space R2. It is delimited.
  • the spindle 242 has annular second projecting portions 242a and 242b that project radially outward from the outer peripheral surface at a portion disposed in the second internal space R2.
  • the second protrusion 242a is disposed above the first protrusion 247a.
  • the 2nd protrusion part 242b is arrange
  • the back surface cleaning unit 204 can prevent the atmosphere such as the first chemical solution or the second chemical solution from entering the first internal space R1 and degrading the driving unit 246a and the like in the first internal space R1. it can.
  • the arm 243 includes a gas supply unit 247b.
  • the gas supply unit 247b is configured by a passage hole, piping, or the like formed in the first arm body 246 or the second arm body 247, and one end thereof is connected to the lower internal space R2b of the second internal space R2. The other end is connected to a gas supply source 245d via a valve 244d, a flow rate regulator (not shown), or the like.
  • the gas supply unit 247b supplies an inert gas such as N 2 gas supplied from the gas supply source 245d to the lower internal space R2b.
  • the arm 243 includes an intake portion 247c.
  • the intake portion 247c is configured by a passage hole, piping, or the like formed in the first arm body 246 or the second arm body 247, and one end thereof is connected to the upper internal space R2a of the second internal space R2, and the like. The end is connected to the intake mechanism 247d.
  • the intake portion 247c takes in the atmosphere in the upper internal space R2a using the intake mechanism 247d. Thereby, it is possible to prevent dust generated from the drive unit 246a and the bearing unit 246e accommodated in the first internal space R1 from flowing out to contaminate the wafer W and the like.
  • the arm 243 includes a discharge unit 247e.
  • the discharge part 247e is configured by a passage hole, piping, or the like formed in the first arm body 246 or the second arm body 247, and one end thereof is exposed on the lower surface of the second arm body 247.
  • the other end of the discharge unit 247e is connected to the first chemical supply source 245a via a valve 244a, a flow rate regulator (not shown), and the like, and via the valve 244b, a flow rate regulator (not shown), etc. It is connected to the second chemical liquid supply source 245b and connected to the rinse liquid supply source 245c via a valve 244c, a flow rate regulator (not shown), or the like.
  • the discharge unit 247e uses the first chemical liquid supplied from the first chemical liquid supply source 245a, the second chemical liquid supplied from the second chemical liquid supply source 245b, or pure water supplied from the rinse liquid supply source 245c to the back brush 241. In order to supply to the hollow portion 113 formed in the main body portion 101, it is discharged vertically downward from the lower surface of the second arm body 247.
  • the discharge part 247e is disposed at a position farther from the spindle 242 than the hollow part 113 of the back brush 241.
  • the discharge part 247e is disposed at a position farther from the spindle 242 than the outer peripheral part of the main body part 101 of the back brush 241.
  • the processing liquid cannot be supplied to the hollow portion 113 simply by discharging the processing liquid from the discharge unit 247e.
  • the back surface cleaning unit 204 includes a guide member 248.
  • the guide member 248 is disposed between the discharge unit 247e and the back surface brush 241, and once receives the processing liquid discharged from the discharge unit 247e and guides it to the hollow portion 113 of the back surface brush 241.
  • the guide member 248 has a circular tray shape in plan view, and is disposed below the second arm body 247 and separated from the second arm body 247. Further, the guide member 248 has an insertion port 248e at the center, and the spindle 242 is inserted into the insertion port 248e, and the step portion formed on the spindle 242 and the connecting portion 102 of the back surface brush 241 move in the vertical direction. It is fixed by being pinched from and rotated together with the spindle 242.
  • FIG. 9 is a schematic perspective view of the guide member 248.
  • the guide member 248 includes a receiving surface 248a and a discharge portion 248b.
  • the receiving surface 248a is an inclined surface that is disposed below the discharge unit 247e and is inclined downward toward the spindle 242 from a position farther from the spindle 242 than the discharge unit 247e.
  • the discharge part 248b is provided in a region of the receiving surface 248a located immediately above the hollow part 113 of the back brush 241 and discharges the processing liquid received on the receiving surface 248a toward the hollow part 113.
  • the discharge part 248b includes a plurality of discharge ports 248b1 that are arranged circumferentially with respect to the receiving surface 248a.
  • the guide member 248 includes a circumferential first wall portion 248c erected upward from the outer peripheral portion of the receiving surface 248a. Thereby, it is possible to prevent the processing liquid received on the receiving surface 248a from dropping from the outer peripheral portion of the receiving surface 248a.
  • the guide member 248 includes a circumferential second wall portion 248d that is erected upward between the discharge portion 248b and the spindle 242. Accordingly, it is possible to prevent the processing liquid received by the receiving surface 248a from entering the insertion hole 121 of the connecting portion 102 along the spindle 242. In addition, it is possible to prevent the spindle 242 and the connection unit 102 from being deteriorated by the processing liquid.
  • FIG. 10 is a schematic perspective view of the back brush 241.
  • the main body portion 101 of the back brush 241 includes a hollow portion 113 that is open at both upper and lower ends.
  • An upper opening 113 a in the hollow portion 113 is provided in the first main body 111.
  • the inner peripheral surface of the upper opening 113 a is provided at a position farther from the spindle 242 than the discharge portion 248 b of the guide member 248.
  • the lower opening 113 b in the hollow portion 113 is provided in the second main body portion 112.
  • the lower opening 113b has a smaller diameter than the upper opening 113a.
  • the inner peripheral surface of the lower opening 113 b is provided at a position closer to the spindle 242 than the discharge portion 248 b of the guide member 248. Therefore, the processing liquid discharged from the discharge portion 248b of the guide member 248 enters the hollow portion 113 from the upper opening 113a, is collected near the spindle 242 side, and is discharged toward the wafer W from the lower opening 113b. It will be.
  • a plurality of openings 113 c are provided in the middle of the hollow portion 113.
  • the plurality of openings 113 c are provided in the first main body 111.
  • a connection portion 113d between the first main body portion 111 and the connection portion 102 is provided between the openings 113c.
  • FIG. 11 is a schematic side view of the accommodating portion 208a.
  • a brush cleaning unit 282 that cleans the back brush 241 disposed at the retracted position is provided on the bottom surface 281 of the accommodating unit 208 a that is the retracted position of the back brush 241.
  • the brush cleaning unit 282 has a discharge port that discharges the cleaning liquid vertically upward, and is connected to the cleaning liquid supply source 284 via a valve 283, a flow rate regulator (not shown), and the like.
  • the brush cleaning unit 282 discharges the cleaning liquid supplied from the cleaning liquid supply source 284 (here, pure water) vertically upward from the discharge port on the bottom surface 281 of the storage unit 208a toward the back brush 241. Then, the back brush 241 is cleaned using a cleaning liquid.
  • the discharge port of the brush cleaning unit 282 is disposed vertically below a region including the outer peripheral portion of the cleaning body 103 and the base end portion of the liquid receiving member 104 disposed at the retracted position. Supply some pure water. As a result, not only the cleaning body 103 but also the liquid receiving member 104 can be cleaned.
  • the back surface cleaning unit 204 discharges pure water from the hollow portion 113 of the back surface brush 241. Thereby, not only the outer side of the cleaning body 103 but also the inner side can be cleaned.
  • the bottom surface 281 of the storage unit 208a is provided with a discharge unit 285 for discharging pure water discharged from the brush cleaning unit 282 and the hollow portion 113 in the brush cleaning process.
  • the bottom surface 281 of the storage unit 208a is inclined downward toward the discharge unit 285.
  • FIG. 12 is a flowchart showing the processing procedure of the back surface cleaning processing.
  • Each processing procedure illustrated in FIG. 12 is executed by the control unit 51 controlling the substrate holding unit 202, the back surface cleaning unit 204, the first supply unit 205, the second supply unit 206, and the like of the second processing unit 28.
  • the first chemical processing is performed (step S101).
  • the nozzle arm 252 is swung using the swivel lift mechanism 253 of the first supply unit 205 to position the nozzle 251 above the wafer W, and then the swivel lift mechanism 244 of the back surface cleaning unit 204. Is used to rotate the arm 243 so that the back brush 241 is positioned above the wafer W.
  • the surrounding wall part 207 is raised using the raising / lowering mechanism 271, and the height position of the surrounding wall part 207 is changed from the 3rd height position H3 (refer FIG. 7) to the 1st height position H1.
  • the wafer W is rotated using the driving unit 224 of the substrate holding unit 202, and the back surface brush 241 is rotated using the driving unit 246a of the back surface cleaning unit 204.
  • SC-1 as the first chemical solution is supplied from the nozzle 251 of the first supply unit 205 to the wafer W, and SC-1 is also supplied from the hollow part 113 of the back brush 241 to the wafer W.
  • the back surface brush 241 is lowered using the turning lift mechanism 244 of the back surface cleaning unit 204 to press the cleaning body 103 against the wafer W, and then the back surface brush 241 and the nozzle 251 are directed from the center of the wafer W to the outer periphery. To move.
  • the particles are removed from the wafer W by the physical cleaning power by the cleaning body 103 and the chemical cleaning power by the SC-1.
  • FIG. 13 is a diagram illustrating a positional relationship between the back brush 241 and the first supply unit 205.
  • the supply position of the processing liquid to the wafer W is preferably as close as possible to the back surface brush 241. This is because, as the processing liquid supply position is closer to the back surface brush 241, it becomes easier to form a liquid film of the processing liquid around the back surface brush 241.
  • the nozzle 251 is too close to the back surface brush 241, the first supply unit 205 and the back surface cleaning unit 204 may come into contact with each other.
  • the nozzle 251 of the first supply unit 205 obliquely discharges SC-1 from the outside of the back brush 241 toward the position on the wafer W in front of the back brush 241.
  • SC-1 is discharged obliquely, so that a liquid film of SC-1 is formed around the back surface brush 241 while avoiding a collision between the first supply unit 205 and the back surface cleaning unit 204. can do.
  • the “position on the wafer W before the back brush 241” is a position on the wafer W at which the SC-1 liquid film formed on the wafer W can reach the back brush 241.
  • the rebound after the processing liquid contacts the wafer W may be larger than when the processing liquid is discharged in the vertical direction.
  • the rebounding processing liquid may scatter over, for example, the peripheral wall portion 207 (see FIG. 5).
  • the nozzle 251 of the first supply unit 205 is located on the wafer W from the outside of the back brush 241 and on the front side of the back brush 241, and SC-1 that has bounced back on the wafer W moves to the liquid receiving member 104.
  • SC-1 is discharged obliquely toward the position received by the lower surface 141.
  • the inclination angle of the nozzle 251 and the height position and horizontal position on the wafer W are such that the SC-1 bounced on the wafer W can be received by the lower surface 141 of the liquid receiving member 104. And set to horizontal position.
  • the control unit 51 controls the swivel lifting mechanism 244 of the back surface cleaning unit 204 and the swivel lifting mechanism 253 of the first supply unit 205 to maintain the positional relationship between the back brush 241 and the nozzle 251 described above and the back brush 241 and The nozzle 251 is moved from the center of the wafer W toward the outer periphery. Thus, the entire surface of the wafer W can be processed while suppressing the scattering of SC-1.
  • the back brush 241 When the back brush 241 reaches the outer periphery of the wafer W, the supply of SC-1 from the nozzle 251 and the hollow portion 113 is stopped, the back brush 241 is raised, and the rotation of the back brush 241 is stopped. Further, the back brush 241 and the nozzle 251 are moved to the center of the wafer W.
  • the first rinsing process is performed (step S102).
  • the processing liquid discharged to the wafer W is switched from the first chemical liquid to the pure water that is the rinsing liquid, and the back surface cleaning unit 204 and the first supply unit 205 are operated in the same manner as the first chemical liquid processing described above. .
  • the SC-1 on the wafer W is washed away with pure water.
  • the positional relationship between the back surface brush 241 and the nozzle 251 in the first rinsing process is the same as the positional relationship between the back surface brush 241 and the nozzle 251 in the first chemical liquid process described above. That is, the nozzle 251 of the first supply unit 205 is located on the wafer W from the outside of the back brush 241 and on the front side of the back brush 241, and the pure water bounced on the wafer W is on the bottom surface of the liquid receiving member 104. The pure water is discharged obliquely toward the position received by 141.
  • the pure water bounced on the wafer W is supplied to the lower surface 141 of the liquid receiving member 104, whereby the SC-1 remaining on the lower surface 141 of the liquid receiving member 104 can be washed away.
  • cleaning body 103 can be wash
  • the cleaning body 103 may be cleaned using pure water discharged from the nozzle 251.
  • the control unit 51 may adjust the position of the nozzle 251 so that the pure water discharged from the nozzle 251 is directly supplied to the cleaning body 103. Thereby, the cleaning effect can be enhanced.
  • the back brush 241 When the back brush 241 reaches the outer periphery of the wafer W, the supply of pure water from the nozzle 251 and the hollow portion 113 is stopped, the back brush 241 is raised, and the rotation of the back brush 241 is stopped. Thereafter, the peripheral wall 207 is displaced from the third height position H3 to the second height position H2, and the back brush 241 and the first supply unit 205 are retracted from the wafer W.
  • a second chemical liquid process is performed (step S103).
  • the nozzle 261 of the second supply unit 206 is disposed on the wafer W, and then the back surface brush 241 is disposed on the wafer W.
  • the peripheral wall portion 207 is moved from the second height position H2. Displace to the third height position H3.
  • the back brush 241 is rotated to supply DHF as the second chemical solution from the nozzle 261 of the second supply unit 206 to the wafer W, and DHF is also applied to the wafer W from the hollow portion 113 of the back brush 241. Supply. Then, after the back surface brush 241 is lowered and the cleaning body 103 is pressed against the wafer W, the back surface brush 241 and the nozzle 261 are moved from the center of the wafer W toward the outer periphery. Thereby, the particles are removed from the wafer W by the physical cleaning force by the cleaning body 103 and the chemical cleaning force by DHF.
  • the positional relationship between the back brush 241 and the nozzle 261 in the second chemical treatment is the same as the positional relationship between the back brush 241 and the nozzle 251 in the first chemical treatment described above. That is, the nozzle 261 of the second supply unit 206 is located on the wafer W from the outside of the back brush 241 and on the front side of the back brush 241, and DHF bounced on the wafer W is received by the liquid receiving member 104. Pure water is discharged obliquely toward the position. Further, the control unit 51 moves the back surface brush 241 and the nozzle 261 from the center portion of the wafer W toward the outer peripheral portion while maintaining the positional relationship between the back surface brush 241 and the nozzle 261 described above.
  • the back surface brush 241 When the back surface brush 241 reaches the outer peripheral portion of the wafer W, the supply of DHF from the nozzle 261 and the hollow portion 113 is stopped, the back surface brush 241 is raised, and the rotation of the back surface brush 241 is stopped. Thereafter, the peripheral wall portion 207 is displaced from the third height position H3 to the second height position H2, and the back surface brush 241 is retracted from the wafer W.
  • a second rinse process is performed (step S104).
  • pure water that is a rinsing liquid is supplied to the wafer W from the nozzle 261 of the second supply unit 206.
  • DHF on the wafer W is washed away with pure water.
  • the supply of pure water from the nozzle 261 is stopped, and the second supply unit 206 is retracted from the wafer W.
  • the positional relationship between the back surface brush 241 and the nozzle 261 in the second rinsing process is the same as the positional relationship between the back surface brush 241 and the nozzle 261 in the second chemical liquid process described above.
  • a brush cleaning process is performed (step S105).
  • the back surface brush 241 is rotated in the accommodating portion 208a which is the retracted position, and pure water is supplied from the bottom surface 281 to the region including the outer peripheral portion of the cleaning body 103 and the base end portion of the liquid receiving member 104. To do. Further, pure water is discharged from the hollow portion 113 of the rotating back surface brush 241. Thereby, the outer side and the inner side of the cleaning body 103 are cleaned, and the liquid receiving member 104 is cleaned.
  • a drying process is performed (step S106).
  • the wafer W is rotated at a faster rotation speed than that in the second rinse process. Thereby, the pure water on the wafer W is removed, and the wafer W is dried. Thereafter, the rotation of the wafer W is stopped, and the peripheral wall portion 207 is displaced from the second height position H2 to the first height position H1.
  • the brush cleaning process may be performed in parallel with the second rinse process or the drying process. Further, the brush cleaning process may be performed in parallel with the unloading process of the processed wafer W and the unloading process of the unprocessed wafer W.
  • the back surface cleaning unit 204 discharges the processing liquid not only from the outside of the back brush 241 but also from the inside of the back brush 241 in the first chemical liquid process, the first rinse process, and the second chemical liquid process. Therefore, particles removed from the wafer W can be made difficult to remain inside the cleaning body 103.
  • the discharge unit 247e (see FIG. 8) of the back surface cleaning unit 204 discharges the first chemical liquid that is the first processing liquid among the plurality of types of processing liquids, and then discharges pure water that is the second processing liquid. Thereafter, the second chemical liquid that is the third processing liquid is discharged.
  • the SC-1 is discharged from the cleaning body 103 by discharging pure water from the hollow portion 113 of the back surface brush 241, that is, from the inside of the cleaning body 103. Can be removed more reliably. Therefore, it is possible to prevent the salt from being generated by the reaction of DHF and SC-1 in the second chemical treatment.
  • the second processing unit 28 performs, for example, initialization processing for returning the back surface cleaning unit 204, the first supply unit 205, and the second supply unit 206 to their respective retracted positions after power-on.
  • the second processing unit 28 simultaneously causes the arm 243 of the back surface cleaning unit 204, the nozzle arm 252 of the first supply unit 205, and the nozzle arm 262 of the second supply unit 206 to simultaneously move toward the retracted position at the same speed.
  • the arm 243 of the back surface cleaning unit 204 rotates the back surface brush 241 along a trajectory that intersects with the trajectory of the nozzle arm 252 of the first supply unit 205 and the trajectory of the nozzle arm 262 of the second supply unit 206.
  • the arm 243 or the like may be displaced from the normal position by manually moving the arm 243 or the like when the power is not supplied. Even if they are, they can be returned to the retracted position, which is the initial position, without interfering with each other.
  • the second processing unit 28 (an example of the substrate cleaning apparatus) according to this embodiment includes the substrate holding unit 202, the back surface brush 241 (an example of the brush), the arm 243, and the first supply unit 205. And a second supply unit 206 (an example of a supply unit).
  • the substrate holding unit 202 rotatably holds the wafer W (an example of a substrate).
  • the arm 243 supports the back brush 241 via the spindle 242 so as to be rotatable.
  • the first supply unit 205 and the second supply unit 206 supply the processing liquid to the wafer W.
  • the back brush 241 includes the main body 101, the cleaning body 103, and the liquid receiving member 104.
  • the main body 101 is connected to the spindle 242.
  • the cleaning body 103 is provided below the main body 101 and is pressed against the wafer W.
  • the liquid receiving member 104 is provided on the outer peripheral portion of the main body 101 and receives the processing liquid scattered from the cleaning body 103.
  • the second processing unit 28 according to the present embodiment can suppress scattering of the processing liquid.
  • the second processing unit 28 (an example of a substrate cleaning apparatus) according to the present embodiment includes a substrate holding unit 202, a back surface brush 241 (an example of a brush), an arm 243, a discharge unit 247e, and a guide member 248.
  • the substrate holding unit 202 rotatably holds the wafer W (an example of a substrate).
  • the back brush 241 is a hollow brush that is open at both upper and lower ends.
  • the arm 243 supports the back brush 241 via the spindle 242 so as to be rotatable.
  • the discharge unit 247e is provided on the arm 243 and can discharge by switching a plurality of types of processing liquids.
  • the guide member 248 is disposed between the discharge portion 247e and the back brush 241 and temporarily receives the processing liquid discharged from the discharge portion 247e and guides it to the hollow portion 113 of the brush.
  • the second processing unit 28 even when a plurality of different types of cleaning liquids are supplied to the back surface brush 241, good cleaning processing can be performed. Further, it is possible to make it difficult for particles or the like removed from the wafer W to remain in the cleaning body 103 of the back surface cleaning unit 204.
  • the guide member 248 rotates integrally with the back brush 241
  • the guide member 248 may be integrated with the second arm body 247 so as not to rotate.
  • liquid receiving member 104 is provided in the second main body 112 of the main body 101 .
  • the liquid receiving member 104 may be provided in the first main body 111. .
  • the back brush for cleaning the back surface of the substrate has been described as an example.
  • the present invention is not limited to this, and the same brush is used for cleaning the front surface and the peripheral edge of the substrate. A configuration may be applied.
  • the inert gas is supplied to the lower internal space R2b of the second internal space R2 (see FIG. 8) and the atmosphere in the upper internal space R2a is sucked.
  • the atmosphere of the lower internal space R2b may be sucked in while supplying an inert gas to the internal space R2a.
  • the back surface cleaning unit 204 does not necessarily need to include the intake unit 247c.
  • the back surface cleaning unit 204 may further include a third supply unit that supplies a rinsing liquid.
  • FIG. 14 is a schematic side view of the first processing unit 18.
  • the first chamber 301 accommodates a first holding unit 302, a first recovery cup 303, a bevel cleaning unit 304, and a first discharge unit 305.
  • An FFU 311 that forms a downflow in the first chamber 301 is provided on the ceiling of the first chamber 301.
  • the first holding unit 302 includes an adsorption holding unit 321, a support member 322, and a driving unit 323.
  • the suction holding unit 321 is, for example, a vacuum chuck, and holds the wafer W by suction.
  • the column member 322 is provided below the suction holding unit 321 and is rotatably supported by the first chamber 301 and the first recovery cup 303 via a bearing (not shown).
  • the drive unit 323 is provided below the support member 322 and rotates the support member 322 around the vertical axis.
  • the first recovery cup 303 is disposed so as to surround the first holding unit 302. At the bottom of the first recovery cup 303, a liquid discharge port 331 for discharging the chemical liquid discharged from the first discharge unit 305 to the outside of the first chamber 301, and for exhausting the atmosphere in the first chamber 301 An exhaust port 332 is formed.
  • the bevel cleaning unit 304 extends in the horizontal direction (here, the Y-axis direction) with the bevel brush 341, and supports the bevel brush 341 from above via the first shaft 342, and the arm 345 in the horizontal direction (here Then, a moving mechanism (not shown) for moving in the X-axis direction is provided. This moving mechanism can move the arm 345 also in the vertical direction (Z-axis direction).
  • the arm 345 can switch between the operation of supporting the bevel brush 341 from above via the first shaft 342 and the operation of supporting the bevel brush 344 from above via the second shaft 343.
  • FIG. 14 shows a state where the bevel brush 344 is removed and the bevel cleaning of the wafer W is performed using only the bevel brush 341.
  • An operation of supporting both the bevel brush 341 and the bevel brush 344 and performing bevel cleaning of the wafer W with two brushes is also possible, but the description thereof is omitted in this embodiment.
  • the accommodating portion 308 accommodates the removed bevel brush 341 or the bevel brush 344.
  • the arm 345 can move between the processing position of the wafer W and the storage unit 308 by moving in the horizontal direction (X-axis direction) and the vertical direction (Z-axis direction).
  • the first discharge unit 305 is provided, for example, at the bottom of the first recovery cup 303, and for example, SC1 (ammonia / hydrogen peroxide / water mixture) via a valve 351, a flow rate regulator (not shown), or the like. Is connected to a chemical solution supply source 352.
  • the first processing unit 18 is configured as described above, and rotates the wafer W in a state where the back surface of the wafer W with the front surface facing upward is sucked and held by the suction holding unit 321. Then, the first processing unit 18 causes the bevel brush 341 of the bevel cleaning unit 304 to contact the peripheral part of the wafer W while discharging the chemical solution from the first discharge unit 305 toward the peripheral part of the back surface of the rotating wafer W. Thus, chemical cleaning with a chemical solution and physical cleaning with a bevel brush 341 are performed.
  • the first processing unit 18 performs a rinsing process by supplying a rinsing liquid such as pure water from the first ejection unit 305 and a drying process of the wafer W by rotating the wafer W after the bevel cleaning process.
  • FIG. 15A to 15C are schematic side views of the accommodating portion 308.
  • the accommodating portion 308 is provided with a bevel brush 341 disposed at the retracted position and a brush cleaning portion 386 for cleaning the bevel brush 344, and includes a valve 384 and a flow rate regulator (not shown). Etc., and connected to the cleaning liquid supply source 383.
  • the brush cleaning unit 386 discharges the cleaning liquid (here, pure water) supplied from the cleaning liquid supply source 383 toward the brush from above the storage unit 308.
  • the bottom surface 381 of the storage unit 308 is provided with a discharge unit 385 for discharging pure water discharged from the brush cleaning unit 386 to the outside in the brush cleaning process.
  • the holding unit 387 holds the brush horizontally.
  • the holding portion 387 has a rotation drive mechanism (not shown) and rotates the bevel brush 344 while holding it. In this embodiment, it is rotated horizontally, but it may be held and rotated with an inclination. In this case, the cleaning liquid supplied from the brush cleaning unit 386 can be easily shaken off from the upper surface of the bevel brush 344 rather than being held horizontally, and the cleaning efficiency is improved.
  • FIG. 15A and FIG. 15B explain the operation until the storage unit 308 stores the bevel brush 344 before performing the cleaning operation of FIG. 15C.
  • the arm 345 moves in the X-axis direction to above the accommodating portion 308 and then descends in the Z-axis direction.
  • the holding portion 387 is movable, and in this state, the holding portion 387 is in the retracted position so that the bevel brush 344 can enter the housing portion 308. Thereafter, when the bevel brush 344 is lowered to a predetermined height, the holding portion 387 starts moving in the X-axis direction indicated by the arrow.
  • the position of the bevel brush 344 is fixed by moving the upper part of the bevel brush 344 from the lateral direction to a position where it is gripped.
  • the shape of the holding unit 387 in plan view is not limited, but even if the brush cleaning unit 386 discharges the cleaning liquid as illustrated in FIG. 15C, an opening or a region that passes through the cleaning liquid without colliding and reaches the bevel brush 344 is secured. It is assumed that
  • the arm 345 is raised.
  • the attaching portion 348 of the second shaft 343 has a convex shape, and the bevel brush 344 is attached to the second shaft 343 by engaging with a not-shown recessed portion provided above the bevel brush 344. As illustrated, the bevel brush 344 can be removed from the second shaft 343 by raising the arm 345.
  • the bevel cleaning process of the wafer W by the bevel brush 341 as shown in FIG. 14 while the bevel brush 344 is being cleaned as shown in FIG. 15C. Can be performed in parallel.
  • the bevel cleaning process of the wafer W by the bevel brush 344 can be performed in parallel. Therefore, the downtime of the bevel cleaning process can be reduced as compared with a system in which one bevel brush is used and the brush is cleaned by the storage unit 308 each time it is contaminated, and the operation efficiency of the first processing unit 18 is improved. be able to.
  • the processing liquid is supplied to the wafer W from both the inside and the outside of the back brush 241, that is, from the hollow portion 113 and the first supply unit 205 or the second supply unit 206 of the back brush 241.
  • the present invention is not limited to this, and the processing liquid may be discharged only from the inside of the back surface brush 241, that is, from the hollow portion 113 of the back surface brush 241.
  • the processing liquid scattered from the cleaning body 103 is received by the lower surface 141 of the liquid receiving member 104, whereby the processing liquid can be prevented from scattering beyond the peripheral wall portion 207.
  • the processing liquid may be supplied only from the outside of the back surface brush 241, that is, from the first supply unit 205 or the second supply unit 206.
  • the processing liquid splashed from the cleaning body 103 is received by the lower surface 141 of the liquid receiving member 104, so that the processing liquid can be prevented from splashing over the peripheral wall portion 207, and splashed on the wafer W. It is possible to prevent the treated liquid from adhering to the main body portion 101, the connection portion 102, and the like of the back brush 241.
  • the arm 243 is swung by the swivel raising / lowering mechanism 244 (an example of the first moving mechanism).
  • the first moving mechanism moves the arm 243 linearly along the rail, for example. It may be.
  • the nozzle arm 252 is swung by the swivel raising / lowering mechanism 253 (an example of the second moving mechanism).
  • the second moving mechanism moves the nozzle arm 252 linearly along the rail, for example. It may be moved.
  • the turning lift mechanism 263 an example of the second moving mechanism in which the nozzle arm 262 is turned.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

Selon un mode de réalisation, la présente invention concerne un appareil de nettoyage de substrat, destiné à nettoyer un substrat à l'aide d'une brosse, qui comporte une section de maintien de substrat, un bras et une section d'alimentation. La section de maintien de substrat tient le substrat de manière que le substrat puisse tourner. Le bras porte la brosse par l'intermédiaire d'une broche de manière que la brosse puisse tourner. La section d'alimentation apporte un liquide de traitement au substrat. La brosse comporte une partie corps principal, un corps de nettoyage et un élément de réception de liquide. La partie corps principal est reliée à la broche. Le corps de nettoyage est disposé au niveau d'une partie inférieure de la partie corps principal, et est appuyé sur le substrat. L'élément de réception de liquide est disposé au niveau de la partie périphérique extérieure de la partie corps principal, et fait saillie de la partie périphérique extérieure de la partie corps principal.
PCT/JP2017/004254 2016-03-22 2017-02-06 Appareil de nettoyage de substrat WO2017163633A1 (fr)

Priority Applications (3)

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JP2018507105A JP6671459B2 (ja) 2016-03-22 2017-02-06 基板洗浄装置
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CN110473818A (zh) * 2019-09-25 2019-11-19 广东先导先进材料股份有限公司 一种晶片自动腐蚀喷淋设备
KR20230137817A (ko) * 2022-03-22 2023-10-05 가부시키가이샤 스크린 홀딩스 현상 장치
JP7525242B2 (ja) 2019-11-21 2024-07-30 東京エレクトロン株式会社 基板処理装置、および基板処理方法

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US20210402565A1 (en) * 2020-06-24 2021-12-30 Applied Materials, Inc. Cleaning system for polishing liquid delivery arm
KR102489796B1 (ko) 2022-06-15 2023-01-18 엔씨케이티 주식회사 반도체 웨이퍼 세정장비의 브러시 감지장치 및 압력제어방법

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JP7525242B2 (ja) 2019-11-21 2024-07-30 東京エレクトロン株式会社 基板処理装置、および基板処理方法
KR20230137817A (ko) * 2022-03-22 2023-10-05 가부시키가이샤 스크린 홀딩스 현상 장치
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CN108885985B (zh) 2023-07-07
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CN108885985A (zh) 2018-11-23
JPWO2017163633A1 (ja) 2019-01-10

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