WO2017156878A1 - 电容单元、电容屏及其制备方法 - Google Patents

电容单元、电容屏及其制备方法 Download PDF

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WO2017156878A1
WO2017156878A1 PCT/CN2016/083663 CN2016083663W WO2017156878A1 WO 2017156878 A1 WO2017156878 A1 WO 2017156878A1 CN 2016083663 W CN2016083663 W CN 2016083663W WO 2017156878 A1 WO2017156878 A1 WO 2017156878A1
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conductive layer
silver
nano
acid
etching
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French (fr)
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赵丹
陈艳丰
李明麟
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意力(广州)电子科技有限公司
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Publication of WO2017156878A1 publication Critical patent/WO2017156878A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

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  • the present invention relates to the field of capacitive screen technologies, and in particular, to a capacitor unit, a capacitive screen, and a method of fabricating the same.
  • nano-scale silver wire conductive film (nano-silver conductive layer) is generally favored by the market.
  • nano-scale silver wire conductive film is generally favored by the market.
  • the following defects are common:
  • Such nano-scale silver wire conductive films are generally etched by laser method, but laser etching requires the purchase of new laser equipment, which is costly. And the laser takes a long time, it is difficult to improve production efficiency.
  • Such nano-scale silver wire conductive films are difficult to use wet etching.
  • the etching is not clean, the line width and line spacing are not uniform, and the side etching and silver wire residual problems are serious (as shown in FIG. 1 and FIG. 2), which is difficult to meet the requirements of general capacitor units.
  • Such nano-scale silver wire conductive film has poor contact with other conductive materials, resulting in unstable contact resistance.
  • an object of the present invention is to provide a capacitor unit which is simple in production process and low in cost.
  • a capacitor unit includes a substrate on which a nano silver conductive layer and a silver paste layer are sequentially disposed, the nano silver conductive layer includes a window region and a non-window region, and the silver paste layer is disposed on the nano silver Non-window area of the conductive layer.
  • Another object of the present invention is to provide a method of fabricating the above capacitor unit.
  • the method for preparing the capacitor unit includes the following steps:
  • the patterned conductive line is etched in the silver paste layer by a laser etching process, that is, the capacitor unit is obtained.
  • the etching solution used in the wet etching comprises the following components by mass: 54 to 58 wt% of acid, 3 to 5 wt% of buffer, 0.1 to 0.5 wt% of surface activity.
  • the balance is water.
  • the acid is selected from one or more of hydrochloric acid, nitric acid, sulfuric acid, carbonic acid, carboxylic acid, sulfonic acid;
  • the buffer is selected from the group consisting of potassium carbonate, sodium carbonate, ammonium fluoride, and phosphoric acid.
  • the surfactant is selected from one or more of OP-10, Tween 80, ethanol, and a fluorosurfactant.
  • the process parameters of the wet etching are: etching temperature: 50 ⁇ 3° C., time: 1.5 to 2 min.
  • the process parameters of the laser etching process are: speed: 3200 ⁇ 200 mm / sec, number of times: 2 to 4 times.
  • the nano silver conductive layer has a square resistance of 100 ⁇ /sq or less.
  • Another object of the present invention is to provide a
  • a capacitive screen comprising at least one capacitor unit according to claim 1.
  • the existing etching methods are mostly made by laser window area, which has long laser time and low work efficiency. It is made by wet etching, and it is easy to etch too much or the etching is not clean. Wide problem, poor etching effect, it is difficult to meet the requirements of making capacitive screen (as shown in Figure 1 and Figure 2).
  • the etching liquid provided by the invention can achieve a line spacing of 30 ⁇ after the etching, and the line width and the line spacing are uniform and clean, the conductivity is excellent, and the resistance is stable.
  • a special silver glue has been developed to produce nano silver materials to solve the problem of poor contact between nano silver materials and other conductive materials such as silver glue.
  • This type of silver glue needs to match a specific nano-silver material, and it is difficult to match most of the nano-silver materials, and the application is limited.
  • the invention designs to retain the nano silver conductive layer in the non-window area, increase the contact area of the silver glue and the nano silver, and the prepared material has stable resistance and good contact, and the design can match all the nano silver materials.
  • Figure 1 is a photograph of the surface of a capacitor unit with poor etching
  • FIG. 2 is a photograph of a surface of a capacitor unit having poor etching
  • FIG. 3 is a schematic structural view of a capacitor unit according to Embodiment 1 of the present invention (101 substrate, 102 non-window area, 103 window area, 104 silver glue layer);
  • FIG. 4 is a photograph showing the surface of a capacitor unit according to Embodiment 1 of the present invention.
  • a capacitor unit of the present embodiment includes a substrate 101, and a nano silver conductive layer and a silver paste layer 104 are sequentially disposed on the substrate, and the nano silver conductive layer includes a window region 103 and a non-window region 102.
  • the silver glue layer 104 is disposed on the non-window area 102 of the nano silver conductive layer.
  • the method for preparing the capacitor unit includes the following steps:
  • the etching solution used in the wet etching comprises the following components by mass: 58 wt% of acid, 3 wt% of buffer, 0.2 wt% of surfactant, and the balance being water;
  • the acid is hydrochloric acid and nitric acid
  • the buffer is ammonium fluoride
  • the surfactant is OP-10;
  • etching temperature 50 ° C, time: 1.5 min;
  • Graphically conductive lines are etched in the silver paste layer by a laser etching process.
  • the process parameters of the laser etching process are: speed: 3300 mm/sec, number of times: 3 times;
  • the capacitor unit is obtained.
  • a design process of a capacitive screen (including at least one of the above capacitor units), the design structure retains a nano silver channel under a silver glue trace in a non-window region, increases a contact area of silver paste and nano silver, and improves nano silver material Poor contact with other materials.
  • This design can be applied to all nano silver materials, suitable for single and double layer films. The film can be made with this design.
  • etching liquid of the patent By applying the etching liquid of the patent, a uniform and clean nano silver channel can be effectively etched, and the line distance of the etching can reach 30 ⁇ (as shown in FIG. 4), and the channel resistance is stable. Combined with the invention design of this patent, the problem of unstable contact resistance of nano-silver resistors is completely solved. The content of this patent can be applied to the mass production of nano-silver materials, and the process is stable and resources are saved.

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  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
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Abstract

一种电容单元、电容屏及其制备方法，该电容单元的制备方法包括如下步骤：在基板（101）上涂覆纳米银导电层；采用湿法蚀刻在所述纳米银导电层的视窗区（103）蚀刻出图形化导电线路；在所述纳米银导电层的非视窗区（102）涂覆银胶层（104）；利用激光蚀刻工艺在所述银胶层（104）蚀刻出图形化导电线路，即得所述电容单元。所述电容单元、电容屏制备方法工时效率高，生产工艺简单，生产良率好，纳米银导电层的线距可以达到30μm，线条良好，导通性优良。

Description

电容单元、电容屏及其制备方法 技术领域
本发明涉及电容屏技术领域，特别是涉及一种电容单元、电容屏及其制备方法。
背景技术
目前，作为ITO导电薄膜的替代物，纳米级银丝导电薄膜(纳米银导电层)，被市场普遍看好。但自纳米级银丝导电薄膜被推出来后，普遍存在如下缺陷：
1、这类纳米级银丝导电薄膜普遍用镭射法蚀刻，但镭射蚀刻需要添购新镭射设备，费用较大。并且镭射的时间较长，难以提高生产效率。
2、这类纳米级银丝导电薄膜难以采用湿法蚀刻。蚀刻不净、线宽线距不均匀，侧蚀、银丝残留问题严重(如图1和图2所示)，难以满足一般电容单元的需求。
3、这类纳米级银丝导电薄膜与其他导电物质的接触性差，导致接触电阻不稳定。
发明内容
基于此，本发明的目的是提供生产工艺简单，成本低的电容单元。
具体的技术方案如下：
一种电容单元，包括基板，在所述基板上依次设有纳米银导电层和银胶层，所述纳米银导电层包括视窗区和非视窗区，所述银胶层设置于所述纳米银导电层的非视窗区。
本发明的另一目的是提供上述电容单元的制备方法。
具体的技术方案如下：
上述电容单元的制备方法，包括如下步骤：
在所述基板上涂覆纳米银导电层；
采用湿法蚀刻在所述纳米银导电层的视窗区蚀刻出图形化导电线路；
在所述纳米银导电层的非视窗区涂覆银胶层；
利用激光蚀刻工艺在所述银胶层蚀刻出图形化导电线路，即得所述电容单元。
在其中一些实施例中，所述湿法蚀刻所采用的蚀刻液包括如下质量百分含量的组份：54～58wt％的酸，3～5wt％的缓冲物，0.1～0.5wt％的表面活性剂，余量为水。
在其中一些实施例中，所述酸选自盐酸、硝酸、硫酸、碳酸、羧酸、磺酸中的一种或几种；所述缓冲物选自碳酸钾、碳酸钠、氟化铵、磷酸氢二钠中的一种或几种；所述表面活性剂选自OP-10、吐温80、乙醇、含氟表面活性剂中的一种或几种。
在其中一些实施例中，所述湿法蚀刻的工艺参数为：蚀刻温度：50±3℃、时间：1.5～2min。
在其中一些实施例中，所述激光蚀刻工艺的工艺参数为：速度：3200±200mm/秒，次数：2～4次。
在其中一些实施例中，所述纳米银导电层的方阻为100Ω/sq以下。
本发明的另一目的是提供一种
一种电容屏，其特征在于，包括至少1个权利要求1所述的电容单元。
本发明的有益效果如下：
1、不需要添购其他设备，生产成本低，省下大笔费用；
2、工时效率高，生产工艺简单，生产良率好。湿蚀刻制程工艺简单，无需改动。仅镭射制作非视窗区的走线，缩短了镭射时间，提高了良率；
3、工艺成熟，制作的纳米级银丝导电薄膜，可适应大、中、小尺寸的电容屏，适应性强；
4、现有的蚀刻方法，大多采用镭射视窗区来制作，镭射时间长，工作效率低。而采用湿蚀刻方法制作，又容易蚀刻过度或者蚀刻不净，蚀刻线距过 宽等问题，蚀刻效果不良，难以达到制作电容屏的要求(如图1和图2所示)。本发明提供的蚀刻液，蚀刻后纳米级银丝的线距可以达到30μ，线宽、线距均匀、干净，导通性优良，阻值稳定。
5、现有开发出特殊的银胶来制作纳米银材料，来解决纳米银材料与其他导电物质(如银胶)接触性差的问题。这类银胶需要匹配特定的纳米银材料，难以匹配大多数的纳米银材料，应用受到限制。本发明设计在非视窗区保留纳米银导电层，增大银胶与纳米银的接触面积，制作出来的材料，电阻稳定、接触性良好，此设计可以匹配所有的纳米银材料。
附图说明
图1为蚀刻不良的电容单元表面照片；
图2为蚀刻不良的电容单元表面照片；
图3为本发明实施例1的电容单元结构示意图(101基板，102非视窗区，103视窗区，104银胶层)；
图4为本发明实施例1的电容单元表面照片。
具体实施方式
以下通过实施例对本申请做进一步阐述。
实施例1
参考图3，本实施例一种电容单元，包括基板101，在所述基板上依次设有纳米银导电层和银胶层104，所述纳米银导电层包括视窗区103和非视窗区102，所述银胶层104设置于所述纳米银导电层的非视窗区102。
上述电容单元的制备方法，包括如下步骤：
在所述基板上涂覆纳米银导电层；
采用湿法蚀刻在所述纳米银导电层的视窗区蚀刻出图形化导电线路；
所述湿法蚀刻所采用的蚀刻液包括如下质量百分含量的组份：58wt％的酸，3wt％的缓冲物，0.2wt％的表面活性剂，余量为水；
所述酸为盐酸和硝酸，所述缓冲物为氟化铵，所述表面活性剂为OP-10；
湿法蚀刻的工艺参数为：蚀刻温度：50℃、时间：1.5min；
在所述纳米银导电层的非视窗区涂覆银胶层；
利用激光蚀刻工艺在所述银胶层蚀刻出图形化导电线路，所述激光蚀刻工艺的工艺参数为：速度：3300mm/秒，次数：3次；
即得所述电容单元。
一种电容屏的设计工艺(包括至少1个上述电容单元)，该设计结构在非视窗区的银胶走线下，保留纳米银通道，增加银胶和纳米银的接触面积，改善纳米银材料与其他材料接触不良的问题。本设计可以应用到所有纳米银的材料上，适合单、双层film等。其中的film都可以用本设计制作。
实验例
应用本专利的蚀刻液，可以有效刻蚀出均匀、干净的纳米银通道，蚀刻的线距可以到达30μ(如图4所示)，通道电阻稳定。结合运用本专利的发明设计，完全解决纳米银电阻接触电阻不稳定的问题，本专利的内容，可以将湿蚀刻真正应用到纳米银材料的量产上，工艺稳定，节约资源。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (8)

  1. 一种电容单元，其特征在于，包括基板，在所述基板上依次设有纳米银导电层和银胶层，所述纳米银导电层包括视窗区和非视窗区，所述银胶层设置于所述纳米银导电层的非视窗区。
  2. 权利要求1所述的电容单元的制备方法，其特征在于，包括如下步骤：
    在所述基板上涂覆纳米银导电层；
    采用湿法蚀刻在所述纳米银导电层的视窗区蚀刻出图形化导电线路；
    在所述纳米银导电层的非视窗区涂覆银胶层；
    利用激光蚀刻工艺在所述银胶层蚀刻出图形化导电线路，即得所述电容单元。
  3. 根据权利要求2所述的制备方法，其特征在于，所述湿法蚀刻所采用的蚀刻液包括如下质量百分含量的组份：54～58wt％的酸，3～5wt％的缓冲物，0.1～0.5wt％的表面活性剂，余量为水。
  4. 根据权利要求3所述的制备方法，其特征在于，所述酸选自盐酸、硝酸、硫酸、碳酸、羧酸、磺酸中的一种或几种；所述缓冲物选自碳酸钾、碳酸钠、氟化铵、磷酸氢二钠中的一种或几种；所述表面活性剂选自OP-10、吐温80、乙醇、含氟表面活性剂中的一种或几种。
  5. 根据权利要求2-4任一项所述的制备方法，其特征在于，所述湿法蚀刻的工艺参数为：蚀刻温度：50±3℃、时间：1.5～2min。
  6. 根据权利要求2所述的制备方法，其特征在于，所述激光蚀刻工艺的工艺参数为：速度：3200±200mm/秒，次数：2～4次。
  7. 根据权利要求2-4任一项所述的制备方法，其特征在于，所述纳米银导电层的方阻为100Ω/sq以下。
  8. 一种电容屏，其特征在于，包括至少1个权利要求1所述的电容单元。
PCT/CN2016/083663 2016-03-16 2016-05-27 电容单元、电容屏及其制备方法 WO2017156878A1 (zh)

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CN205721718U (zh) * 2016-03-16 2016-11-23 意力(广州)电子科技有限公司 电容单元及其电容屏
CN108733243B (zh) * 2017-04-17 2021-11-02 蓝思科技（长沙）有限公司 一种基于纳米银薄膜的触摸屏的制作方法

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