WO2017156879A1 - 电容单元及其电容屏 - Google Patents

电容单元及其电容屏 Download PDF

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Publication number
WO2017156879A1
WO2017156879A1 PCT/CN2016/083664 CN2016083664W WO2017156879A1 WO 2017156879 A1 WO2017156879 A1 WO 2017156879A1 CN 2016083664 W CN2016083664 W CN 2016083664W WO 2017156879 A1 WO2017156879 A1 WO 2017156879A1
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WO
WIPO (PCT)
Prior art keywords
silver
conductive layer
nano
capacitor unit
capacitor
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PCT/CN2016/083664
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English (en)
French (fr)
Inventor
赵丹
陈艳丰
李明麟
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意力(广州)电子科技有限公司
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Publication of WO2017156879A1 publication Critical patent/WO2017156879A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material

Definitions

  • the present invention relates to the field of capacitive screen technologies, and in particular, to a capacitor unit and a capacitive screen thereof.
  • nano-scale silver wire conductive film (nano-silver conductive layer) is generally favored by the market.
  • nano-scale silver wire conductive film is generally favored by the market.
  • the following defects are common:
  • Such nano-scale silver wire conductive films are generally etched by laser method, but laser etching requires the purchase of new laser equipment, which is costly. And the laser takes a long time, it is difficult to improve production efficiency.
  • Such nano-scale silver wire conductive films are difficult to use wet etching.
  • the etching is not clean, the line width and line spacing are not uniform, and the side etching and silver wire residual problems are serious (as shown in FIG. 1 and FIG. 2), which is difficult to meet the requirements of general capacitor units.
  • Such nano-scale silver wire conductive film has poor contact with other conductive materials, resulting in unstable contact resistance.
  • an object of the present invention is to provide a capacitor unit which is simple in production process and low in cost.
  • a capacitor unit includes a substrate on which a nano silver conductive layer and a silver paste layer are sequentially disposed, the nano silver conductive layer includes a window region and a non-window region, and the silver paste layer is disposed on the nano silver Non-window area of the conductive layer.
  • the window region of the nano-silver conductive layer is provided with a patterned conductive trace formed by wet etching.
  • the patterned conductive traces have a line pitch of 30-50 [mu]m.
  • the nano-silver conductive layer has a thickness of 2-10 ⁇ m.
  • the silver paste layer has a thickness of 3-7 ⁇ m.
  • Another object of the present invention is to provide a capacitive screen.
  • a capacitive screen comprising at least one capacitor unit according to claim 1.
  • FIG. 1 is a schematic structural view of a capacitor unit according to Embodiment 1 of the present invention (101 substrate, 102 non-window area, 103 window area, 104 silver glue layer).
  • a capacitor unit includes a substrate 101 on which a nano silver conductive layer and a silver paste layer 104 are sequentially disposed, and the nano silver conductive layer includes a window region 103 and a non-window region 102.
  • the silver glue layer 104 is disposed on the non-window area 102 of the nano silver conductive layer.
  • the window region of the nano-silver conductive layer is provided with a patterned conductive line formed by wet etching.
  • the patterned conductive trace has a line pitch of 30-50 ⁇ m, the nano silver conductive layer has a thickness of 5 ⁇ m, and the silver paste layer has a thickness of 5 ⁇ m.
  • the method for preparing the capacitor unit includes the following steps:
  • the etching solution used in the wet etching comprises the following components by mass: 58 wt% of acid, 3 wt% of buffer, 0.2 wt% of surfactant, and the balance being water;
  • the acid is hydrochloric acid and nitric acid
  • the buffer is ammonium fluoride
  • the surfactant is OP-10;
  • etching temperature 50 ° C, time: 1.5 min;
  • Graphically conductive lines are etched in the silver paste layer by a laser etching process.
  • the process parameters of the laser etching process are: speed: 3300 mm/sec, number of times: 3 times;
  • the capacitor unit is obtained.
  • a design process of a capacitive screen (including at least one of the above capacitor units), the design structure retains a nano silver channel under a silver glue trace in a non-window region, increases a contact area of silver paste and nano silver, and improves nano silver material Poor contact with other materials.
  • This design can be applied to all nano silver materials, suitable for single and double film. The film can be made with this design.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Human Computer Interaction (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

本发明涉及一种电容单元及其电容屏，所述电容单元包括基板，在所述基板上依次设有纳米银导电层和银胶层，所述纳米银导电层包括视窗区和非视窗区，所述银胶层设置于所述纳米银导电层的非视窗区。本发明设计在非视窗区保留纳米银导电层，增大银胶与纳米银的接触面积，制作出来的材料，电阻稳定、接触性良好，此设计可以匹配所有的纳米银材料。

Description

电容单元及其电容屏 技术领域
本发明涉及电容屏技术领域，特别是涉及一种电容单元及其电容屏。
背景技术
目前，作为ITO导电薄膜的替代物，纳米级银丝导电薄膜(纳米银导电层)，被市场普遍看好。但自纳米级银丝导电薄膜被推出来后，普遍存在如下缺陷：
1、这类纳米级银丝导电薄膜普遍用镭射法蚀刻，但镭射蚀刻需要添购新镭射设备，费用较大。并且镭射的时间较长，难以提高生产效率。
2、这类纳米级银丝导电薄膜难以采用湿法蚀刻。蚀刻不净、线宽线距不均匀，侧蚀、银丝残留问题严重(如图1和图2所示)，难以满足一般电容单元的需求。
3、这类纳米级银丝导电薄膜与其他导电物质的接触性差，导致接触电阻不稳定。
发明内容
基于此，本发明的目的是提供生产工艺简单，成本低的电容单元。
具体的技术方案如下：
一种电容单元，包括基板，在所述基板上依次设有纳米银导电层和银胶层，所述纳米银导电层包括视窗区和非视窗区，所述银胶层设置于所述纳米银导电层的非视窗区。
在其中一些实施例中，所述纳米银导电层的视窗区设有湿法蚀刻形成的图形化导电线路。
在其中一些实施例中，所述图形化导电线路的线距为30-50μm。
在其中一些实施例中，所述纳米银导电层的厚度为2-10μm。
在其中一些实施例中，所述银胶层的厚度为3-7μm。
本发明的另一目的是提供一种电容屏。
具体的技术方案如下：
一种电容屏，包括至少1个权利要求1所述的电容单元。
本发明的有益效果如下：
现有技术中，需要开发特殊的银胶来制作纳米银材料，以解决纳米银材料与其他导电物质(如银胶)接触性差的问题。这类银胶需要匹配特定的纳米银材料，难以匹配大多数的纳米银材料，应用受到限制。本发明设计在非视窗区保留纳米银导电层，增大银胶与纳米银的接触面积，制作出来的材料，电阻稳定、接触性良好，此设计可以匹配所有的纳米银材料。
附图说明
图1为本发明实施例1的电容单元结构示意图(101基板，102非视窗区，103视窗区，104银胶层)。
具体实施方式
以下通过实施例对本申请做进一步阐述。
实施例1
参考图1，本实施例一种电容单元，包括基板101，在所述基板上依次设有纳米银导电层和银胶层104，所述纳米银导电层包括视窗区103和非视窗区102，所述银胶层104设置于所述纳米银导电层的非视窗区102。
所述纳米银导电层的视窗区设有湿法蚀刻形成的图形化导电线路。
所述图形化导电线路的线距为30-50μm，所述纳米银导电层的厚度为5μm，所述银胶层的厚度为5μm。
上述电容单元的制备方法，包括如下步骤：
在所述基板上涂覆纳米银导电层；
采用湿法蚀刻在所述纳米银导电层的视窗区蚀刻出图形化导电线路；
所述湿法蚀刻所采用的蚀刻液包括如下质量百分含量的组份：58wt％的酸，3wt％的缓冲物，0.2wt％的表面活性剂，余量为水；
所述酸为盐酸和硝酸，所述缓冲物为氟化铵，所述表面活性剂为OP-10；
湿法蚀刻的工艺参数为：蚀刻温度：50℃、时间：1.5min；
在所述纳米银导电层的非视窗区涂覆银胶层；
利用激光蚀刻工艺在所述银胶层蚀刻出图形化导电线路，所述激光蚀刻工艺的工艺参数为：速度：3300mm/秒，次数：3次；
即得所述电容单元。
一种电容屏的设计工艺(包括至少1个上述电容单元)，该设计结构在非视窗区的银胶走线下，保留纳米银通道，增加银胶和纳米银的接触面积，改善纳米银材料与其他材料接触不良的问题。本设计可以应用到所有纳米银的材料上，适合单、双层膜等。其中的膜都可以用本设计制作。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (6)

  1. 一种电容单元，包括基板，其特征在于，在所述基板上依次设有纳米银导电层和银胶层，所述纳米银导电层包括视窗区和非视窗区，所述银胶层设置于所述纳米银导电层的非视窗区。
  2. 根据权利要求1所述的电容单元，其特征在于，所述纳米银导电层的视窗区设有湿法蚀刻形成的图形化导电线路。
  3. 根据权利要求2所述的电容单元，其特征在于，所述图形化导电线路的线距为30-50μm。
  4. 根据权利要求1-3任一项所述的电容单元，其特征在于，所述纳米银导电层的厚度为2-10μm。
  5. 根据权利要求1所述的电容单元，其特征在于，所述银胶层的厚度为3-7μm。
  6. 一种电容屏，其特征在于，包括至少1个权利要求1所述的电容单元。
PCT/CN2016/083664 2016-03-16 2016-05-27 电容单元及其电容屏 WO2017156879A1 (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204028877U (zh) * 2014-07-07 2014-12-17 苏州斯迪克新材料科技股份有限公司 一种基于纳米银线的双层电容式触摸屏用透明导电薄膜组
CN204155252U (zh) * 2014-08-27 2015-02-11 北京百纳威尔科技有限公司 一种手机电容触摸屏结构
CN105808028A (zh) * 2016-03-16 2016-07-27 意力(广州)电子科技有限公司 电容单元、电容屏及其制备方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204028877U (zh) * 2014-07-07 2014-12-17 苏州斯迪克新材料科技股份有限公司 一种基于纳米银线的双层电容式触摸屏用透明导电薄膜组
CN204155252U (zh) * 2014-08-27 2015-02-11 北京百纳威尔科技有限公司 一种手机电容触摸屏结构
CN105808028A (zh) * 2016-03-16 2016-07-27 意力(广州)电子科技有限公司 电容单元、电容屏及其制备方法

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