WO2017156830A1 - Oled器件的封装方法与oled封装结构 - Google Patents

Oled器件的封装方法与oled封装结构 Download PDF

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WO2017156830A1
WO2017156830A1 PCT/CN2016/080281 CN2016080281W WO2017156830A1 WO 2017156830 A1 WO2017156830 A1 WO 2017156830A1 CN 2016080281 W CN2016080281 W CN 2016080281W WO 2017156830 A1 WO2017156830 A1 WO 2017156830A1
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tft substrate
oled device
barrier layer
oled
layer
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French (fr)
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钱佳佳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/105,573 priority Critical patent/US10784468B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a packaging method of an OLED device and an OLED package structure.
  • OLED is an Organic Light-Emitting Diode, which has the characteristics of self-illumination, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption, etc., and has received extensive attention as a new generation display mode. It has gradually replaced the traditional liquid crystal display (LCD), which is widely used in mobile phone screens, computer monitors, and full color TVs.
  • LCD liquid crystal display
  • Packaging is a crucial part in the manufacturing process of OLED devices. Since the composition of water, oxygen and other components in the air has a great influence on the lifetime of the organic luminescent materials in the OLED structure, the degree of packaging directly affects the sealing property. Lead to large changes in product life and quality. Therefore, packaging technology is an important technology for the quality of OLED devices.
  • FIG. 1 is a schematic diagram of a conventional OLED package structure. As shown in FIG. 1 , the OLED package structure includes a TFT substrate 100 and is disposed on the TFT substrate 100 .
  • the function of the layer 400 is to increase the length of the permeation channel, release the stress between the barrier layers 300, cover the inevitable particles, and do not have a water blocking mechanism by itself; therefore, the barrier layer 300 must be larger than and completely cover the buffer layer 400. Otherwise, water vapor may intrude through the buffer layer 400, thereby deteriorating the performance of the package structure.
  • the size of the barrier layer 300 and the buffer layer 400 are different, the masks used in the manufacturing process are different, so that the number of masks used in the process of the OLED package structure is large, the process is complicated, and the production cost is high, and the sealed OLED package structure is poor in sealing, which easily causes water vapor and oxygen. Infiltration, resulting in faster degradation of the performance of the OLED device, shortened life.
  • the object of the present invention is also to provide an OLED package structure with simple process and strong sealing, which can improve the performance of the OLED device and prolong the service life of the OLED device.
  • the present invention provides a method for packaging an OLED device, comprising the following steps:
  • Step 1 Providing a TFT substrate, forming an OLED device on the TFT substrate, and a ring wall located at a periphery of the OLED device;
  • Step 2 forming a first barrier layer covering the OLED device in a region surrounded by the retaining wall on the TFT substrate, and forming a buffer layer on the first barrier layer;
  • Step 3 repeating the operation of the step 2 several times until the upper surface of the outermost buffer layer is close to or flush with the top surface of the retaining wall, thereby obtaining a plurality of first barrier layers and several buffer layers a laminated film formed by staggering superposition;
  • Step 4 forming a second barrier layer on the laminated film, the second barrier layer completely covering the laminated film and the top of the retaining wall, thereby completing packaging of the OLED device.
  • step 1 The specific implementation of the step 1 includes the following steps:
  • Step 11 Providing a TFT substrate, and forming an OLED device by using an evaporation method on the TFT substrate;
  • Step 12 forming a formation region of the retaining wall on the TFT substrate, using a reticle to block other regions of the TFT substrate except the region, and performing low temperature plasma enhanced chemical vapor deposition or atomic layer deposition techniques.
  • An inorganic material is deposited on the TFT substrate to form a ring of retaining walls on the peripheral region of the OLED device.
  • step 1 The specific implementation of the step 1 includes the following steps:
  • Step 11 ′ depositing an inorganic material on the TFT substrate by a low temperature plasma enhanced chemical vapor deposition method or an atomic layer deposition technique to form an inorganic material layer covering the TFT substrate, and using a photolithography process to the inorganic material Performing a pattern processing on the layer to obtain a ring wall located at a peripheral position of the TFT substrate;
  • Step 12' forming an OLED device by an evaporation method in a region surrounded by the retaining wall on the TFT substrate.
  • the first barrier layer is formed by disposing a formation region of the first barrier layer on the TFT substrate, and blocking the TFT substrate by using a mask. In other regions outside the region, an inorganic material is deposited on the TFT substrate by a low temperature plasma enhanced chemical vapor deposition method or an atomic layer deposition technique to form a first barrier layer.
  • the buffer layer is formed by disposing a buffer layer on the TFT substrate, and a mask is used to block other regions of the TFT substrate except the region.
  • Printing, evaporation, or plasma enhanced chemical vapor deposition deposits an organic material on the TFT substrate to form a buffer layer.
  • the area of the first barrier layer and the buffer layer are both equal to the area of the area of the TFT substrate surrounded by the retaining wall.
  • the present invention also provides an OLED package structure, comprising a TFT substrate, an OLED device disposed on the TFT substrate, a ring wall disposed on the TFT substrate and located at a periphery of the OLED device, and disposed on the TFT a laminated film on the substrate surrounded by the retaining wall and covering the OLED device, and a second barrier layer completely covering the laminated film and the top of the retaining wall;
  • the laminated film includes a plurality of first barrier layers and a plurality of buffer layers, wherein the first barrier layer and the buffer layer are alternately disposed, and the first layer of the film directly covering the OLED device in the laminated film is The first barrier layer, the outermost film of the laminated film is a buffer layer.
  • the upper surface of the outermost buffer layer in the laminated film is lower or flush with the top surface of the retaining wall.
  • the area of the first barrier layer and the buffer layer are both equal to the area of the area of the TFT substrate surrounded by the retaining wall.
  • the material of the retaining wall, the first barrier layer, and the second barrier layer is an inorganic material; and the material of the buffer layer is an organic material.
  • the invention also provides a packaging method for an OLED device, comprising the following steps:
  • Step 1 Providing a TFT substrate, forming an OLED device on the TFT substrate, and a ring wall located at a periphery of the OLED device;
  • Step 2 forming a first barrier layer covering the OLED device in a region surrounded by the retaining wall on the TFT substrate, and forming a buffer layer on the first barrier layer;
  • Step 3 repeating the operation of the step 2 several times until the upper surface of the outermost buffer layer is close to or flush with the top surface of the retaining wall, thereby obtaining a plurality of first barrier layers and several buffer layers a laminated film formed by staggering superposition;
  • Step 4 forming a second barrier layer on the laminated film, the second barrier layer completely covering the laminated film and the top of the retaining wall, thereby completing packaging of the OLED device;
  • the first barrier layer is formed by disposing a formation region of the first barrier layer on the TFT substrate, and shielding the TFT substrate by using a mask.
  • the buffer layer is formed by disposing a buffer layer on the TFT substrate, and shielding the TFT substrate from other regions than the region.
  • the organic material is deposited on the TFT substrate by printing, evaporation, or plasma enhanced chemical vapor deposition to form a buffer layer.
  • the present invention provides an OLED device packaging method and an OLED package structure, by forming a ring of a retaining wall on the periphery of the OLED device, and then forming a cover OLED device in a region surrounded by the retaining wall a laminated film comprising a plurality of first barrier layers and a plurality of buffer layers arranged in a staggered manner, and finally forming a buffer layer on the outermost layer of the laminate film and covering the buffer layer
  • the second barrier layer on the top of the wall provides a highly sealed OLED package structure that avoids moisture intrusion, improves the performance of the OLED device, and extends the lifetime of the OLED device.
  • the encapsulation method forms a highly sealed protective cover for the OLED device through a retaining wall and a second barrier layer of the outermost layer, so that the first barrier layer is not considered when manufacturing the laminated film inside the retaining wall.
  • the area must be larger than the area of the buffer layer, so that the first barrier layer and the buffer layer can be fabricated by the same mask, thereby reducing the number of masks, simplifying the packaging process, and further reducing the production cost.
  • FIG. 1 is a schematic view of a conventional OLED package structure
  • FIG. 2 is a flow chart of a method of packaging an OLED device of the present invention
  • step 1 of a packaging method of an OLED device of the present invention is a schematic diagram of step 1 of a packaging method of an OLED device of the present invention.
  • step 2 of a packaging method of an OLED device of the present invention is a schematic diagram of step 2 of a packaging method of an OLED device of the present invention.
  • step 3 of a packaging method of an OLED device of the present invention is a schematic diagram of step 3 of a packaging method of an OLED device of the present invention.
  • FIG. 6 is a schematic diagram of step 4 of the packaging method of the OLED device of the present invention and a schematic diagram of the OLED package structure of the present invention.
  • the present invention provides a method for packaging an OLED device, including the following steps:
  • Step 1 as shown in FIG. 3, a TFT substrate 10 is provided, on which an OLED device 20 and a ring wall 30 located on the periphery of the OLED device 20 are formed.
  • step 1 may include the following steps:
  • Step 11 providing a TFT substrate 10, on the TFT substrate 10 using an evaporation method to form an OLED device 20;
  • Step 12 forming a formation region of the retaining wall on the TFT substrate 10, shielding a region other than the region on the TFT substrate 10 by a reticle, and performing low temperature plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced)
  • PECVD low temperature plasma enhanced chemical vapor deposition
  • a chemical material is deposited on the TFT substrate 10 by an ALD (Atomic Layer Deposition), and a ring wall 30 is formed on a peripheral region of the OLED device 20.
  • step 1 may also include the following steps:
  • Step 11 ′ depositing an inorganic material on the TFT substrate 10 by a low temperature plasma enhanced chemical vapor deposition method or an atomic layer deposition technique to form an inorganic material layer covering the TFT substrate 10, using a photolithography process
  • the inorganic material layer is patterned to obtain a ring retaining wall 30 located at a peripheral position of the TFT substrate 10;
  • step 12' the OLED device 20 is formed by an evaporation method in a region of the TFT substrate 10 surrounded by the retaining wall 30.
  • Step 2 As shown in FIG. 4, a first barrier layer 40 covering the OLED device 20 is formed in a region of the TFT substrate 10 surrounded by the retaining wall 30, and a buffer is formed on the first barrier layer 40. Layer 50.
  • Step 3 repeat the operation of the step 2 several times until the upper surface of the outermost buffer layer 50 is close to or flush with the top surface of the retaining wall 30, thereby obtaining a number of layers
  • a barrier film 40 and a plurality of buffer layers 50 are alternately stacked to form a laminated film.
  • the first barrier layer 40 is formed by disposing a formation region of the first barrier layer on the TFT substrate 10, and shielding the TFT substrate 10 by using a mask. On the other regions than the region, an inorganic material is deposited on the TFT substrate 10 by a low temperature plasma enhanced chemical vapor deposition method or an atomic layer deposition technique to form a first barrier layer 40.
  • the buffer layer 50 is formed by disposing a buffer layer 50 on the TFT substrate 10, and shielding the TFT substrate 10 with a mask. Other areas outside the area, by printing, evaporation, or plasma enhancement The vapor deposition method deposits an organic material on the TFT substrate 10 to form a buffer layer 50.
  • the area of the first barrier layer 40 and the buffer layer 50 is equal to the area of the region of the TFT substrate 10 surrounded by the retaining wall 30, so that the laminated film fills the TFT substrate 10 The space enclosed by the retaining wall 30 forms a tight seal and protection for the OLED device 20. Since the first barrier layer 40 and the buffer layer 50 have the same area, the first barrier layer 40 and the buffer layer 50 can be fabricated using the same mask to save production cost.
  • Step 4 as shown in FIG. 6, a second barrier layer 60 is formed on the buffer layer 50 of the outermost layer of the laminated film, the second barrier layer 60 completely covering the outermost buffer layer 50 and the The top of the retaining wall 30 completes the packaging of the OLED device 20.
  • the method for fabricating the second barrier layer 60 is substantially the same as the method for fabricating the first barrier layer 40, except that the mask used is different.
  • the material of the retaining wall 30, the first barrier layer 40, and the second barrier layer 60 is an inorganic material such as silicon nitride (SiN x ) or aluminum oxide (Al 2 O 3 ); the buffer layer 50
  • the material is acrylic resin or silicon-containing organic material.
  • the present invention further provides an OLED package structure, including a TFT substrate 10 , an OLED device 20 disposed on the TFT substrate 10 , and a TFT substrate 10 disposed on the periphery of the OLED device 20 .
  • the laminated film includes a plurality of first barrier layers 40 and a plurality of buffer layers 50, wherein the first barrier layer 40 and the buffer layer 50 are alternately disposed, and the laminated film directly covers the OLED device 20
  • the first film is the first barrier layer 40
  • the outermost film of the laminate film is the buffer layer 50.
  • the upper surface of the outermost buffer layer 50 in the laminated film is slightly lower or flush with the top surface of the retaining wall 30.
  • the area of the first barrier layer 40 and the buffer layer 50 is equal to the area of the region of the TFT substrate 10 surrounded by the retaining wall 30, so that the laminated film fills the TFT substrate 10 The space enclosed by the retaining wall 30 forms a tight seal and protection for the OLED device 20. Since the first barrier layer 40 and the buffer layer 50 have the same area, the first barrier layer 40 and the buffer layer 50 can be fabricated using the same mask to save production cost.
  • the material of the retaining wall 30, the first barrier layer 40, and the second barrier layer 60 is an inorganic material; and the material of the buffer layer 50 is an organic material.
  • the material of the retaining wall 30, the first barrier layer 40, and the second barrier layer 60 is an inorganic material such as silicon nitride (SiN x ) or aluminum oxide (Al 2 O 3 ); the buffer layer 50
  • the material is acrylic resin or silicon-containing organic material.
  • the present invention provides an OLED device packaging method and an OLED package structure, by forming a ring of a retaining wall on the periphery of the OLED device, and then forming a covering of the OLED device in a region surrounded by the retaining wall.
  • a laminated film comprising a plurality of first barrier layers and a plurality of buffer layers interlaced, and finally forming a buffer layer and a retaining wall on the buffer layer of the outermost layer of the laminate film
  • the second barrier layer on the top thereby obtaining a highly sealed OLED package structure, can avoid moisture intrusion, improve the performance of the OLED device, and prolong the service life of the OLED device.
  • the encapsulation method forms a highly sealed protective cover for the OLED device through a retaining wall and a second barrier layer of the outermost layer, so that the first barrier layer is not considered when manufacturing the laminated film inside the retaining wall.
  • the area must be larger than the area of the buffer layer, so that the first barrier layer and the buffer layer can be fabricated by the same mask, thereby reducing the number of masks, simplifying the packaging process, and further reducing the production cost.

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Abstract

提供一种OLED器件的封装方法与OLED结构，通过在OLED器件（20）的外围制作一圈挡墙（30），然后在挡墙（30）包成的区域内形成覆盖OLED器件（20）的叠层薄膜，该叠层薄膜包括交错设置的数层第一阻挡层（40）与数层缓冲层（50），在叠层薄膜最外层的缓冲层（50）上形成完全覆盖该缓冲层（50）及挡墙（30）的顶部的第二阻挡层（60），从而得到密封性极强的OLED封装结构。该方法通过挡墙与最外层的第二阻挡层形成了一个针对OLED器件的密封性极强的保护罩，从而在制作挡墙内部的叠层薄膜时，无需考虑第一阻挡层的面积一定要大于缓冲层的面积，使得第一阻挡层与缓冲层可采用同一道掩膜制作，从而减少掩膜数量，简化封装制程，降低生产成本。

Description

OLED器件的封装方法与OLED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED器件的封装方法与OLED封装结构。
背景技术
OLED即有机发光二极管(Organic Light-Emitting Diode)，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统的液晶显示器(LCD，Liquid Crystal Display)，被广泛应用在手机屏幕、电脑显示器、全彩电视等。
封装是OLED器件制造过程中至关重要的一个环节，由于空气中的水、氧等成分对OLED结构中的有机发光材料的寿命影响很大，所以封装的优劣程度直接影响其密封性，进而导致产品使用寿命和质量发生较大的变化。因此，封装技术是左右OLED器件质量的重要技术。
目前OLED器件的封装主要采用硬质封装基板(如玻璃或金属)通过封装胶封装，但是该方法不适用于柔性器件，因此也有技术方案通过叠层薄膜(阻水性好的阻挡层(barrier layer)和柔韧性好的缓冲层(buffer layer)来封装。图1为现有的一种OLED封装结构的示意图，如图1所示，该OLED封装结构包括TFT基板100、设于所述TFT基板100上的OLED器件200、以及设于所述OLED器件200及TFT基板100上的数层交错设置的阻挡层300与缓冲层400，其中所述阻挡层300的作用是阻挡水氧侵入，所述缓冲层400的作用是增加渗透通道长度，释放阻挡层300间应力，覆盖不可避免的颗粒(particle)的作用，本身不具有阻水机制；因此，阻挡层300一定要大于并且完全包覆缓冲层400，否则水汽可通过缓冲层400侵入，由此造成封装结构的性能劣化。上述OLED封装结构中，由于阻挡层300与缓冲层400的大小不同，因此在制作时采用的光罩不同，从而使得该OLED封装结构的制程中采用的光罩数量较多，制程复杂，且生产成本较高，同时制得的OLED封装结构的密封性差，容易造成水汽和氧气渗入，导致OLED器件的性能较快退化，寿命缩短。
因此，有必要提出一种OLED器件的封装方法与OLED封装结构，以解决上述问题。
发明内容
本发明的目的在于提供一种OLED器件的封装方法，可简化封装制程，并且对OLED器件形成密封性极强的封装效果，从而避免水汽侵入，提高OLED器件的性能，延长OLED器件的使用寿命。
本发明的目的还在于提供一种OLED封装结构，制程简单，且密封性极强，可提高OLED器件的性能，延长OLED器件的使用寿命。
为实现上述目的，本发明提供一种OLED器件的封装方法，包括以下步骤：
步骤1、提供一TFT基板，在所述TFT基板上形成OLED器件、以及位于所述OLED器件外围的一圈挡墙；
步骤2、在所述TFT基板上被所述挡墙包围的区域内形成覆盖OLED器件的第一阻挡层，在所述第一阻挡层上形成一缓冲层；
步骤3、重复所述步骤2的操作数次，直至最外层的缓冲层的上表面接近或者平齐于所述挡墙的顶部表面，从而得到由数层第一阻挡层与数层缓冲层交错叠加构成的叠层薄膜；
步骤4、在所述叠层薄膜上形成一第二阻挡层，所述第二阻挡层完全覆盖所述叠层薄膜以及所述挡墙的顶部，从而完成对OLED器件的封装。
所述步骤1的具体实施方式包括以下步骤：
步骤11、提供一TFT基板，在所述TFT基板上采用蒸镀方法形成OLED器件；
步骤12、在所述TFT基板上设置挡墙的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，在OLED器件的外围区域上形成一圈挡墙。
所述步骤1的具体实施方式包括以下步骤：
步骤11’、通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成覆盖所述TFT基板的一无机材料层，采用一道光刻制程对所述无机材料层进行图形化处理，得到位于所述TFT基板的周边位置的一圈挡墙；
步骤12’、在所述TFT基板上被所述挡墙包围的区域内采用蒸镀方法形成OLED器件。
所述步骤2和步骤3中，所述第一阻挡层的制作方法为：在所述TFT基板上设置第一阻挡层的形成区域，采用一道光罩遮挡所述TFT基板上除 该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成第一阻挡层。
所述步骤2和步骤3中，所述缓冲层的制作方法为：在所述TFT基板上设置缓冲层的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过打印、蒸镀、或等离子体增强化学气相沉积法在所述TFT基板上沉积有机材料，形成缓冲层。
所述第一阻挡层与缓冲层的面积均等于所述TFT基板上被所述挡墙包围的区域的面积。
本发明还提供一种OLED封装结构，包括TFT基板、设于所述TFT基板上的OLED器件、设于所述TFT基板上且位于所述OLED器件外围的一圈挡墙、设于所述TFT基板上被所述挡墙包围的区域内且覆盖所述OLED器件的叠层薄膜、以及完全覆盖所述叠层薄膜与所述挡墙的顶部的第二阻挡层；
所述叠层薄膜包括数层第一阻挡层与数层缓冲层，其中，第一阻挡层与缓冲层交替设置，所述叠层薄膜中直接覆盖于所述OLED器件上的第一层薄膜为第一阻挡层，所述叠层薄膜中的最外层薄膜为缓冲层。
所述叠层薄膜中最外层的缓冲层的上表面低于或者平齐于所述挡墙的顶部表面。
所述第一阻挡层与缓冲层的面积均等于所述TFT基板上被所述挡墙包围的区域的面积。
所述挡墙、第一阻挡层、及第二阻挡层的材料为无机材料；所述缓冲层的材料为有机材料。
本发明还提供一种OLED器件的封装方法，包括以下步骤：
步骤1、提供一TFT基板，在所述TFT基板上形成OLED器件、以及位于所述OLED器件外围的一圈挡墙；
步骤2、在所述TFT基板上被所述挡墙包围的区域内形成覆盖OLED器件的第一阻挡层，在所述第一阻挡层上形成一缓冲层；
步骤3、重复所述步骤2的操作数次，直至最外层的缓冲层的上表面接近或者平齐于所述挡墙的顶部表面，从而得到由数层第一阻挡层与数层缓冲层交错叠加构成的叠层薄膜；
步骤4、在所述叠层薄膜上形成一第二阻挡层，所述第二阻挡层完全覆盖所述叠层薄膜以及所述挡墙的顶部，从而完成对OLED器件的封装；
其中，所述步骤2和步骤3中，所述第一阻挡层的制作方法为：在所述TFT基板上设置第一阻挡层的形成区域，采用一道光罩遮挡所述TFT基 板上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成第一阻挡层；
其中，所述步骤2和步骤3中，所述缓冲层的制作方法为：在所述TFT基板上设置缓冲层的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过打印、蒸镀、或等离子体增强化学气相沉积法在所述TFT基板上沉积有机材料，形成缓冲层。
本发明的有益效果：本发明提供的一种OLED器件的封装方法与OLED封装结构，通过在OLED器件的外围制作一圈挡墙，然后在所述挡墙包围的区域内形成覆盖所述OLED器件的叠层薄膜，所述叠层薄膜包括交错设置的数层第一阻挡层与数层缓冲层，最后在所述叠层薄膜最外层的缓冲层上形成完全覆盖该缓冲层以及所述挡墙的顶部的第二阻挡层，从而得到密封性极强的OLED封装结构，可避免水汽侵入，提高OLED器件的性能，延长OLED器件的使用寿命。该封装方法通过一道挡墙与最外层的第二阻挡层形成了一个针对OLED器件的密封性极强的保护罩，从而在制作挡墙内部的叠层薄膜时，不必考虑第一阻挡层的面积一定要大于缓冲层的面积，使得第一阻挡层与缓冲层可采用同一道光罩制作，从而减少光罩数量，简化封装制程，进而降低生产成本。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种OLED封装结构的示意图；
图2为本发明的OLED器件的封装方法的流程图；
图3为本发明的OLED器件的封装方法的步骤1的示意图；
图4为本发明的OLED器件的封装方法的步骤2的示意图；
图5为本发明的OLED器件的封装方法的步骤3的示意图；
图6为本发明的OLED器件的封装方法的步骤4的示意图暨本发明的OLED封装结构的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED器件的封装方法，包括以下步骤：
步骤1、如图3所示，提供一TFT基板10，在所述TFT基板10上形成OLED器件20、以及位于所述OLED器件20外围的一圈挡墙30。
具体的，所述步骤1的具体实施方式可以包括以下步骤：
步骤11、提供一TFT基板10，在所述TFT基板10上采用蒸镀方法形成OLED器件20；
步骤12、在所述TFT基板10上设置挡墙的形成区域，采用一道光罩遮挡所述TFT基板10上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法(PECVD，Plasma Enhanced Chemical Vapor Deposition)或者原子层沉积技术(ALD，Atomic Layer Deposition)在所述TFT基板10上沉积无机材料，在OLED器件20的外围区域上形成一圈挡墙30。
或者，所述步骤1的具体实施方式也可以包括以下步骤：
步骤11’、通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板10上沉积无机材料，形成覆盖所述TFT基板10的一无机材料层，采用一道光刻制程对所述无机材料层进行图形化处理，得到位于所述TFT基板10的周边位置的一圈挡墙30；
步骤12’、在所述TFT基板10上被所述挡墙30包围的区域内采用蒸镀方法形成OLED器件20。
步骤2、如图4所示，在所述TFT基板10上被所述挡墙30包围的区域内形成覆盖OLED器件20的第一阻挡层40，在所述第一阻挡层40上形成一缓冲层50。
步骤3、如图5所示，重复所述步骤2的操作数次，直至最外层的缓冲层50的上表面接近或者平齐于所述挡墙30的顶部表面，从而得到由数层第一阻挡层40与数层缓冲层50交错叠加构成的叠层薄膜。
具体的，所述步骤2和步骤3中，所述第一阻挡层40的制作方法为：在所述TFT基板10上设置第一阻挡层的形成区域，采用一道光罩遮挡所述TFT基板10上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板10上沉积无机材料，形成第一阻挡层40。
具体的，所述步骤2和步骤3中，所述缓冲层50的制作方法为：在所述TFT基板10上设置缓冲层50的形成区域，采用一道光罩遮挡所述TFT基板10上除该区域以外的其它区域，通过打印、蒸镀、或等离子体增强化 学气相沉积法在所述TFT基板10上沉积有机材料，形成缓冲层50。
优选的，所述第一阻挡层40与缓冲层50的面积均等于所述TFT基板10上被所述挡墙30包围的区域的面积，从而使得所述叠层薄膜填充所述TFT基板10上方被所述挡墙30围成的空间，对所述OLED器件20形成密封性极强的封装和保护。由于所述第一阻挡层40与缓冲层50的面积相等，从而使得所述第一阻挡层40与缓冲层50可以使用同一道光罩来制作，以节约生产成本。
步骤4、如图6所示，在所述叠层薄膜最外层的缓冲层50上形成一第二阻挡层60，所述第二阻挡层60完全覆盖最外层的缓冲层50以及所述挡墙30的顶部，从而完成对OLED器件20的封装。
具体的，所述第二阻挡层60的制作方法与所述第一阻挡层40的制作方法基本相同，区别之处在于采用的光罩不同。
优选的，所述挡墙30、第一阻挡层40、及第二阻挡层60的材料为氮化硅(SiNx)、或氧化铝(Al2O3)等无机材料；所述缓冲层50的材料为亚克力树脂或者含硅的有机材料。
请参阅图6，本发明还提供一种OLED封装结构，包括TFT基板10、设于所述TFT基板10上的OLED器件20、设于所述TFT基板10上且位于所述OLED器件20外围的一圈挡墙30、设于所述TFT基板10上被所述挡墙30包围的区域内且覆盖所述OLED器件20的叠层薄膜、以及完全覆盖所述叠层薄膜与所述挡墙30的顶部的第二阻挡层60；
所述叠层薄膜包括数层第一阻挡层40与数层缓冲层50，其中，第一阻挡层40与缓冲层50交替设置，所述叠层薄膜中直接覆盖于所述OLED器件20上的第一层薄膜为第一阻挡层40，所述叠层薄膜中的最外层薄膜为缓冲层50。
具体的，所述叠层薄膜中最外层的缓冲层50的上表面略低于或者平齐于所述挡墙30的顶部表面。
优选的，所述第一阻挡层40与缓冲层50的面积均等于所述TFT基板10上被所述挡墙30包围的区域的面积，从而使得所述叠层薄膜填充所述TFT基板10上方被所述挡墙30围成的空间，对所述OLED器件20形成密封性极强的封装和保护。由于所述第一阻挡层40与缓冲层50的面积相等，从而使得所述第一阻挡层40与缓冲层50可以使用同一道光罩来制作，以节约生产成本。
具体的，所述挡墙30、第一阻挡层40、及第二阻挡层60的材料为无机材料；所述缓冲层50的材料为有机材料。
优选的，所述挡墙30、第一阻挡层40、及第二阻挡层60的材料为氮化硅(SiNx)、或氧化铝(Al2O3)等无机材料；所述缓冲层50的材料为亚克力树脂或者含硅的有机材料。
综上所述，本发明提供的一种OLED器件的封装方法与OLED封装结构，通过在OLED器件的外围制作一圈挡墙，然后在所述挡墙包围的区域内形成覆盖所述OLED器件的叠层薄膜，所述叠层薄膜包括交错设置的数层第一阻挡层与数层缓冲层，最后在所述叠层薄膜最外层的缓冲层上形成完全覆盖该缓冲层以及所述挡墙的顶部的第二阻挡层，从而得到密封性极强的OLED封装结构，可避免水汽侵入，提高OLED器件的性能，延长OLED器件的使用寿命。该封装方法通过一道挡墙与最外层的第二阻挡层形成了一个针对OLED器件的密封性极强的保护罩，从而在制作挡墙内部的叠层薄膜时，不必考虑第一阻挡层的面积一定要大于缓冲层的面积，使得第一阻挡层与缓冲层可采用同一道光罩制作，从而减少光罩数量，简化封装制程，进而降低生产成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种OLED器件的封装方法，包括以下步骤：
    步骤1、提供一TFT基板，在所述TFT基板上形成OLED器件、以及位于所述OLED器件外围的一圈挡墙；
    步骤2、在所述TFT基板上被所述挡墙包围的区域内形成覆盖OLED器件的第一阻挡层，在所述第一阻挡层上形成一缓冲层；
    步骤3、重复所述步骤2的操作数次，直至最外层的缓冲层的上表面接近或者平齐于所述挡墙的顶部表面，从而得到由数层第一阻挡层与数层缓冲层交错叠加构成的叠层薄膜；
    步骤4、在所述叠层薄膜上形成一第二阻挡层，所述第二阻挡层完全覆盖所述叠层薄膜以及所述挡墙的顶部，从而完成对OLED器件的封装。
  2. 如权利要求1所述的OLED基板的封装方法，其中，所述步骤1的具体实施方式包括以下步骤：
    步骤11、提供一TFT基板，在所述TFT基板上采用蒸镀方法形成OLED器件；
    步骤12、在所述TFT基板上设置挡墙的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，在OLED器件的外围区域上形成一圈挡墙。
  3. 如权利要求1所述的OLED基板的封装方法，其中，所述步骤1的具体实施方式包括以下步骤：
    步骤11’、通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成覆盖所述TFT基板的一无机材料层，采用一道光刻制程对所述无机材料层进行图形化处理，得到位于所述TFT基板的周边位置的一圈挡墙；
    步骤12’、在所述TFT基板上被所述挡墙包围的区域内采用蒸镀方法形成OLED器件。
  4. 如权利要求1所述的OLED基板的封装方法，其中，所述步骤2和步骤3中，所述第一阻挡层的制作方法为：在所述TFT基板上设置第一阻挡层的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成第一阻挡层。
  5. 如权利要求1所述的OLED基板的封装方法，其中，所述步骤2和步骤3中，所述缓冲层的制作方法为：在所述TFT基板上设置缓冲层的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过打印、蒸镀、或等离子体增强化学气相沉积法在所述TFT基板上沉积有机材料，形成缓冲层。
  6. 如权利要求1所述的OLED基板的封装方法，其中，所述第一阻挡层与缓冲层的面积均等于所述TFT基板上被所述挡墙包围的区域的面积。
  7. 一种OLED封装结构，包括TFT基板、设于所述TFT基板上的OLED器件、设于所述TFT基板上且位于所述OLED器件外围的一圈挡墙、设于所述TFT基板上被所述挡墙包围的区域内且覆盖所述OLED器件的叠层薄膜、以及完全覆盖所述叠层薄膜与所述挡墙的顶部的第二阻挡层；
    所述叠层薄膜包括数层第一阻挡层与数层缓冲层，其中，第一阻挡层与缓冲层交替设置，所述叠层薄膜中直接覆盖于所述OLED器件上的第一层薄膜为第一阻挡层，所述叠层薄膜中的最外层薄膜为缓冲层。
  8. 如权利要求7所述的OLED封装结构，其中，所述叠层薄膜中最外层的缓冲层的上表面低于或者平齐于所述挡墙的顶部表面。
  9. 如权利要求7所述的OLED封装结构，其中，所述第一阻挡层与缓冲层的面积均等于所述TFT基板上被所述挡墙包围的区域的面积。
  10. 如权利要求7所述的OLED封装结构，其中，所述挡墙、第一阻挡层、及第二阻挡层的材料为无机材料；所述缓冲层的材料为有机材料。
  11. 一种OLED器件的封装方法，包括以下步骤：
    步骤1、提供一TFT基板，在所述TFT基板上形成OLED器件、以及位于所述OLED器件外围的一圈挡墙；
    步骤2、在所述TFT基板上被所述挡墙包围的区域内形成覆盖OLED器件的第一阻挡层，在所述第一阻挡层上形成一缓冲层；
    步骤3、重复所述步骤2的操作数次，直至最外层的缓冲层的上表面接近或者平齐于所述挡墙的顶部表面，从而得到由数层第一阻挡层与数层缓冲层交错叠加构成的叠层薄膜；
    步骤4、在所述叠层薄膜上形成一第二阻挡层，所述第二阻挡层完全覆盖所述叠层薄膜以及所述挡墙的顶部，从而完成对OLED器件的封装；
    其中，所述步骤2和步骤3中，所述第一阻挡层的制作方法为：在所述TFT基板上设置第一阻挡层的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成第一阻挡层；
    其中，所述步骤2和步骤3中，所述缓冲层的制作方法为：在所述TFT基板上设置缓冲层的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过打印、蒸镀、或等离子体增强化学气相沉积法在所述TFT基板上沉积有机材料，形成缓冲层。
  12. 如权利要求11所述的OLED基板的封装方法，其中，所述步骤1的具体实施方式包括以下步骤：
    步骤11、提供一TFT基板，在所述TFT基板上采用蒸镀方法形成OLED器件；
    步骤12、在所述TFT基板上设置挡墙的形成区域，采用一道光罩遮挡所述TFT基板上除该区域以外的其它区域，通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，在OLED器件的外围区域上形成一圈挡墙。
  13. 如权利要求11所述的OLED基板的封装方法，其中，所述步骤1的具体实施方式包括以下步骤：
    步骤11’、通过低温等离子体增强化学气相沉积法或者原子层沉积技术在所述TFT基板上沉积无机材料，形成覆盖所述TFT基板的一无机材料层，采用一道光刻制程对所述无机材料层进行图形化处理，得到位于所述TFT基板的周边位置的一圈挡墙；
    步骤12’、在所述TFT基板上被所述挡墙包围的区域内采用蒸镀方法形成OLED器件。
  14. 如权利要求11所述的OLED基板的封装方法，其中，所述第一阻挡层与缓冲层的面积均等于所述TFT基板上被所述挡墙包围的区域的面积。
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