WO2017154545A1 - Matériau de formation de film pour procédé de réserve, procédé de formation de motif et polymère - Google Patents

Matériau de formation de film pour procédé de réserve, procédé de formation de motif et polymère Download PDF

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Publication number
WO2017154545A1
WO2017154545A1 PCT/JP2017/006231 JP2017006231W WO2017154545A1 WO 2017154545 A1 WO2017154545 A1 WO 2017154545A1 JP 2017006231 W JP2017006231 W JP 2017006231W WO 2017154545 A1 WO2017154545 A1 WO 2017154545A1
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group
film
resist
polymer
alcoholic hydroxyl
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PCT/JP2017/006231
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English (en)
Japanese (ja)
Inventor
祐亮 庵野
智昭 瀬古
克聡 錦織
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Jsr株式会社
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Priority to JP2018504339A priority Critical patent/JP6741957B2/ja
Publication of WO2017154545A1 publication Critical patent/WO2017154545A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups

Definitions

  • the present invention relates to a film forming material for a resist process, a pattern forming method, and a polymer.
  • a resist process is often used in which a resist film laminated on a substrate to be processed is exposed and developed through an organic antireflection film, and etching is performed using the obtained resist pattern as a mask.
  • a phenomenon in which the resist pattern is peeled off at the time of development or after development is likely to occur due to high integration of semiconductor elements or the like, that is, miniaturization of the resist pattern.
  • the difference in etching rate between the resist film and the organic antireflection film is small. For this reason, with the miniaturization and thinning of the resist film, there is an inconvenience that the substrate to be processed coated with the organic antireflection film cannot be finely processed by etching using the resist pattern as a mask.
  • the present invention has been made based on the above circumstances, and can form a resist intermediate film (silicon-containing film) that is excellent in adhesion to a resist film, has a good resist pattern shape, and has little collapse.
  • a resist forming film forming material, a pattern forming method using the resist forming film forming material, and a polymer suitable as such a resist processing film forming material is a resist intermediate film (silicon-containing film) that is excellent in adhesion to a resist film, has a good resist pattern shape, and has little collapse.
  • the present invention made in order to solve the above problems is a film forming material for a resist process containing a polymer having a structural unit derived from a silane monomer having two or more protected alcoholic hydroxyl groups, and an organic solvent. is there.
  • Another invention made in order to solve the above-described problems includes a step of forming a silicon-containing film on at least one surface side of the substrate by using the film forming material for a resist process, a polymer having an acid dissociable group, and A step of forming a resist film on the surface of the silicon-containing film opposite to the substrate, a step of exposing the resist film, and a step of exposing the radiation-containing resin composition containing a radiation-sensitive acid generator. And a step of developing the resist film formed.
  • R 1 is a monovalent organic group containing two or more protected alcoholic hydroxyl groups, or a monovalent organic group containing one protected alcoholic hydroxyl group.
  • R 2 represents a monovalent organic group containing two or more protected alcoholic hydroxyl groups, a monovalent organic group containing one protected alcoholic hydroxyl group, a hydrogen atom, a hydroxy group, or a protected alcoholic group.
  • a is 0 or 1.
  • R 1 is a monovalent organic group containing one protected alcoholic hydroxyl group
  • a is 1.
  • R 3 is a monovalent organic group having a light-absorbing group that does not have a protected alcoholic hydroxyl group.
  • R 4 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms which does not have a hydrogen atom, a hydroxy group, or a protected alcoholic hydroxyl group.
  • b is 0 or 1.
  • R 5 is a non-light-absorbing substituted or unsubstituted monovalent aliphatic hydrocarbon group that does not have a protected alcoholic hydroxyl group.
  • c is an integer of 0-2. When c is 2, the plurality of R 5 may be the same or different.
  • d represents the molar ratio of the structural unit U X to all the structural units constituting the polymer.
  • e represents a molar ratio of structural units U Y to the total structural units constituting the polymer.
  • f represents the molar ratio of structural units U Z to the total structural units constituting the polymer.
  • d, e, and f satisfy 0 ⁇ d ⁇ 1, 0 ⁇ e ⁇ 1, and 0 ⁇ f ⁇ 1, respectively, and d + e + f ⁇ 1.
  • the film forming material for a resist process of the present invention it is possible to form a silicon-containing film that is excellent in adhesiveness with a resist film, has a good resist pattern shape, and has little collapse.
  • the silicon-containing film obtained from the resist process film-forming material is also excellent in the resist composition's resistance to solvents, antireflection properties, and etching resistance.
  • an excellent resist pattern can be formed by using an excellent silicon-containing film formed of the resist process film forming material.
  • the polymer of the present invention is preferably used as a main component of a film forming material for a resist process that can form a silicon-containing film that has excellent adhesion to a resist film, has a good resist pattern shape, and has little collapse. Can do. Therefore, these can be suitably used for manufacturing semiconductor devices and the like that are expected to be further miniaturized in the future.
  • the resist process film forming material according to an embodiment of the present invention (hereinafter, also simply referred to as “film forming material”) is derived from [A] a silane monomer having two or more protected alcoholic hydroxyl groups. A polymer having a structural unit and [B] an organic solvent.
  • the film-forming material may contain optional components such as [C] nitrogen-containing compound, [D] acid generator, and [E] water as long as the effects of the present invention are not impaired. However, each optional component such as [C] nitrogen-containing compound, [D] acid generator, and [E] water may not be contained.
  • each component will be described in detail.
  • the polymer has a structural unit derived from a silane monomer having two or more protected alcoholic hydroxyl groups.
  • a silicon-containing film is formed from the film-forming material and a resist pattern is formed, it is assumed that the resist pattern has excellent adhesion with the following reasons, and pattern collapse during development can be suppressed.
  • the reason why the present invention has the above effects is not limited to the following reasons.
  • the protected alcoholic hydroxyl group is preferably an alcoholic hydroxyl group protected by an acid-dissociable protecting group.
  • the resist film laminated on the surface of the silicon-containing film is usually formed of a radiation-sensitive composition containing a radiation-sensitive acid generator (hereinafter sometimes simply referred to as “acid generator”). For this reason, an acid is generated in the resist film when the resist film is exposed.
  • acid generator a radiation-sensitive acid generator
  • the alcoholic hydroxyl group of the structural unit in the polymer [A] is deprotected by the acid, and the silicon-containing film (hereinafter referred to as “resist intermediate film”, “resist underlayer” in the exposed portion is exposed. It may be referred to as a “film” or the like.)
  • the surface is hydrophilized.
  • the exposed resist film (resist pattern) It is presumed that the adhesion with the silicon-containing film is increased and the pattern collapse during development can be suppressed.
  • the above structural unit of the [A] polymer has two or more protected alcoholic hydroxyl groups, it is presumed that the hydrophilicity can be effectively increased and the ability to suppress pattern collapse is excellent. . Since substances with low surface energy are unevenly distributed at the gas phase interface, when a film is formed using a polymer having a hydrophilic group such as an unprotected alcoholic hydroxyl group, the hydrophilic group is unevenly distributed on the surface. do not do.
  • the film surface after exposure is effectively made hydrophilic. It is speculated that the adhesion to the resist pattern can be improved.
  • the polymer has, for example, a structure represented by the following formula (1).
  • R 1 is a monovalent organic group containing two or more protected alcoholic hydroxyl groups, or a monovalent organic group containing one protected alcoholic hydroxyl group.
  • R 2 represents a monovalent organic group containing two or more protected alcoholic hydroxyl groups, a monovalent organic group containing one protected alcoholic hydroxyl group, a hydrogen atom, a hydroxy group, or a protected alcoholic group.
  • a is 0 or 1. However, when R 1 is a monovalent organic group containing one protected alcoholic hydroxyl group, a is 1.
  • R 3 is a monovalent organic group having a light-absorbing group that does not have a protected alcoholic hydroxyl group.
  • R 4 is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms which does not have a hydrogen atom, a hydroxy group, or a protected alcoholic hydroxyl group.
  • b is 0 or 1.
  • R 5 is a non-light-absorbing substituted or unsubstituted monovalent aliphatic hydrocarbon group that does not have a protected alcoholic hydroxyl group.
  • c is an integer of 0-2. When c is 2, the plurality of R 5 may be the same or different.
  • d represents the molar ratio of the structural unit U X to all the structural units constituting the polymer.
  • e represents a molar ratio of structural units U Y to the total structural units constituting the polymer.
  • f represents the molar ratio of structural units U Z to the total structural units constituting the polymer.
  • d, e, and f satisfy 0 ⁇ d ⁇ 1, 0 ⁇ e ⁇ 1, and 0 ⁇ f ⁇ 1, respectively, and d + e + f ⁇ 1.
  • the structure represented by the above formula (1) may further include a structural unit U Y in addition to the structural unit U X. That is, in the above formula (1), 0 ⁇ d ⁇ 1 and 0 ⁇ e ⁇ 1 may be satisfied.
  • the structure represented by the above formula (1) may further include a structural unit U Z in addition to the structural unit U X and the structural unit U Y. That is, in the above formula (1), 0 ⁇ d ⁇ 1 and 0 ⁇ f ⁇ 1 may be satisfied, or 0 ⁇ d ⁇ 1, 0 ⁇ e ⁇ 1, and 0 ⁇ f ⁇ 1 may be satisfied. .
  • the formula (1) it further has a structural unit U Z, silicon content of the polymer is increased, it is like to improve the oxygen gas etching resistance.
  • the structural unit U X is a structural unit derived from a silane monomer having two or more alcoholic hydroxyl group protected.
  • examples of the monovalent organic group containing two or more protected alcoholic hydroxyl groups represented by R 1 and R 2 include groups represented by the following formula (2). Can do.
  • X 1 is a trivalent organic group having 1 to 20 carbon atoms.
  • Each R 6 is independently a single bond or a substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms.
  • Y 1 is each independently a monovalent protecting group, or two Y 1 may be bonded to each other to form a divalent protecting group. * Indicates a binding site.
  • Examples of the trivalent organic group having 1 to 20 carbon atoms represented by X 1 include a trivalent hydrocarbon group having 1 to 20 carbon atoms, and a heteroatom-containing group between carbon-carbon or at the terminal of the hydrocarbon group. And groups in which part or all of the hydrogen atoms of these groups are substituted with substituents.
  • Examples of the trivalent hydrocarbon group having 1 to 20 carbon atoms include a trivalent aliphatic hydrocarbon group having 1 to 20 carbon atoms and a trivalent aromatic hydrocarbon group having 6 to 20 carbon atoms. it can. Note that when X 1 is a trivalent aromatic hydrocarbon group having 6 to 20 carbon atoms, each R 6 is independently a substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms. can do.
  • Examples of the trivalent aliphatic hydrocarbon group having 1 to 20 carbon atoms include a trivalent chain hydrocarbon group having 1 to 20 carbon atoms and a trivalent alicyclic hydrocarbon group having 3 to 20 carbon atoms. be able to.
  • Examples of the trivalent chain hydrocarbon group having 1 to 20 carbon atoms include alkanetriyl groups such as methanetriyl group, ethanetriyl group, propanetriyl group, butanetriyl group, and pentanetriyl group, Alkenetriyl groups such as ethenetriyl group, propenetriyl group, butenetriyl group, pentenetriyl group, Examples thereof include alkynetriyl groups such as propynetriyl group, butynetriyl group and pentynetriyl group.
  • Examples of the trivalent alicyclic hydrocarbon group having 3 to 20 carbon atoms include cycloalkanetriyl groups such as cyclopropanetriyl group, cyclopentanetriyl group, and cyclohexanetriyl group, Cycloalkenetriyl group such as cyclopropenetriyl group, cyclopentenetriyl group, cyclohexentriyl group, And trivalent bridged ring hydrocarbon groups such as a norbornanetriyl group, an adamantanetriyl group, and a norbornenetriyl group.
  • cycloalkanetriyl groups such as cyclopropanetriyl group, cyclopentanetriyl group, and cyclohexanetriyl group
  • Cycloalkenetriyl group such as cyclopropenetriyl group, cyclopentenetriyl group, cyclohexentriyl group
  • trivalent aromatic hydrocarbon group having 6 to 20 carbon atoms examples include benzenetriyl group, naphthalenetriyl group, anthracentriyl group and the like.
  • the above heteroatom-containing group refers to a group having a divalent or higher valent heteroatom in the structure.
  • the hetero atom-containing group may have one hetero atom or two or more hetero atoms.
  • the heteroatom-containing group may be composed of only one heteroatom.
  • the divalent or higher valent hetero atom of the hetero atom-containing group is not particularly limited as long as it is a hetero atom having a valence of 2 or higher.
  • a hetero atom having a valence of 2 or higher For example, an oxygen atom, a nitrogen atom, a sulfur atom, a silicon atom, a phosphorus atom And boron atoms.
  • heteroatom-containing group examples include groups consisting of only heteroatoms such as —O—, —S—, —SO—, —SO 2 —, —SO 2 O—, —SO 3 —, etc. Combination of carbon atom and hetero atom such as —CO—, —COO—, —COS—, —CONH—, —OCOO—, —OCOS—, —OCONH—, —SCONH—, —SCSNH—, —SCSS—, etc. Group and the like.
  • the carbon number of the organic groups represented by X 1 also includes the number of carbon atoms in these heteroatom-containing group. The same applies to the carbon number of the organic group.
  • Examples of the substituent include a halogen atom, a hydroxy group, a carboxy group, a nitro group, and a cyano group.
  • the carbon number of the organic groups represented by X 1, also includes the number of carbon atoms in these substituents. The same applies to the carbon number of the organic group.
  • the group represented by X 1 is preferably a substituted or unsubstituted trivalent hydrocarbon group, more preferably a substituted or unsubstituted trivalent aliphatic hydrocarbon group, and a substituted or unsubstituted trivalent hydrocarbon group.
  • a chain hydrocarbon group is more preferred, a substituted or unsubstituted alkanetriyl group is more preferred, and a linear alkanetriyl group is still more preferred.
  • a group containing an oxygen atom or a sulfur atom between carbon-carbons of these hydrocarbon groups is also preferred.
  • the lower limit of the carbon number of the group represented by X 1 is 1, but 2 is preferable and 3 is more preferable.
  • the upper limit of the carbon number of the group represented by X 1 is preferably 20, more preferably 10, and still more preferably 6.
  • Examples of the substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms represented by R 6 include a divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms and a divalent hydrocarbon group having 6 to 10 carbon atoms. And a group in which part or all of the hydrogen atoms of these groups are substituted with a substituent.
  • Examples of the divalent aliphatic hydrocarbon group having 1 to 10 carbon atoms include a divalent chain hydrocarbon group having 1 to 10 carbon atoms and a divalent alicyclic hydrocarbon group having 3 to 10 carbon atoms. be able to.
  • Examples of the divalent chain hydrocarbon group having 1 to 10 carbon atoms include alkanediyl groups such as methanediyl group, ethanediyl group, propanediyl group, butanediyl group, and pentanediyl group, Alkenediyl groups such as ethenediyl group, propenediyl group, butenediyl group, pentenediyl group, Examples thereof include alkynediyl groups such as ethynediyl group, propynediyl group, butynediyl group, and pentynediyl group.
  • Examples of the divalent alicyclic hydrocarbon group having 3 to 10 carbon atoms include cycloalkanediyl groups such as cyclopropanediyl group, cyclopentanediyl group, and cyclohexanediyl group, Cycloalkenediyl groups such as cyclopropenediyl group, cyclopentenediyl group, cyclohexenediyl group, And divalent bridged ring hydrocarbon groups such as a norbornanediyl group, an adamantanediyl group, and a norbornenediyl group.
  • cycloalkanediyl groups such as cyclopropanediyl group, cyclopentanediyl group, and cyclohexanediyl group
  • Cycloalkenediyl groups such as cyclopropenediyl group, cyclopentenediyl group, cyclohexenedi
  • Examples of the divalent aromatic hydrocarbon group having 6 to 10 carbon atoms include a benzenediyl group, a naphthalenediyl group, and an anthracenediyl group.
  • Examples of the substituent of the hydrocarbon group represented by R 6 include the same groups as those exemplified as the substituent of the group represented by X 1 .
  • R 6 is preferably a single bond or a divalent chain hydrocarbon group having 1 to 10 carbon atoms.
  • divalent chain hydrocarbon groups having 1 to 10 carbon atoms divalent chain hydrocarbon groups having 1 to 4 carbon atoms are more preferable, and divalent chain hydrocarbon groups having 1 to 2 carbon atoms are preferable. More preferred is a methanediyl group.
  • X 1 is a linear alkanetriyl group or a group containing an oxygen atom or a sulfur atom between the carbon-carbon, and two R 6 are bonded to the terminal carbon atom of X 1. More preferably.
  • the monovalent protecting group represented by Y 1 is not particularly limited as long as it is a group that is deprotected by an acid or the like, but is preferably a group that is deprotected by an acid, for example, R a- , R It may be mentioned and R a -O-CO-, a group represented by - a -CO-, R a -O- C (R b) 2.
  • R a is a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms.
  • Two R b s are each independently a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms.
  • R b may combine with R a to form part of the ring structure.
  • Y 1 is a group represented by R a
  • an ether type protective structure is formed.
  • R a is a group represented by R a —CO—
  • an ester-type protective structure such as alkylcarbonyloxy group protection is formed.
  • R a is a group represented by R a —O—C (R b ) 2 —
  • an acetal type protective structure is formed.
  • Examples of the substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R a and R b include a monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms and 6 to 10 carbon atoms. And monovalent aromatic hydrocarbon groups, groups obtained by substituting some or all of the hydrogen atoms of these groups with substituents, and the like.
  • Examples of the monovalent aliphatic hydrocarbon group having 1 to 10 carbon atoms include a monovalent chain hydrocarbon group having 1 to 10 carbon atoms and a monovalent alicyclic hydrocarbon group having 3 to 10 carbon atoms. be able to.
  • Examples of the monovalent chain hydrocarbon group having 1 to 10 carbon atoms include alkyl groups such as methyl group, ethyl group, propyl group, butyl group, and pentyl group, ethenyl group, propenyl group, butenyl group, and pentenyl group.
  • Alkynyl groups such as an alkenyl group and an ethynyl group can be exemplified.
  • Examples of the monovalent alicyclic hydrocarbon group having 3 to 10 carbon atoms include a cycloalkyl group such as a cyclopropyl group, a cyclopentyl group, and a cyclohexyl group, and a cycloalkenyl group such as a cyclopropenyl group, a cyclopentenyl group, and a cyclohexenyl group. And monovalent bridged ring hydrocarbon groups such as a norbornyl group and an adamantyl group.
  • Examples of the monovalent aromatic hydrocarbon group having 6 to 10 carbon atoms include aryl groups such as phenyl group, tolyl group, xylyl group and naphthyl group, aralkyl groups such as benzyl group and phenethyl group.
  • Examples of the substituent for the hydrocarbon group represented by R a and R b include the same groups as those exemplified as the substituent for the group represented by X 1 .
  • R a an alkyl group and a cycloalkyl group are preferable, and secondary and tertiary alkyl groups and a cycloalkyl group are more preferable, and a tertiary alkyl group is more preferable from the viewpoint of detachability.
  • the t-butyl group is particularly preferred.
  • R b is preferably a hydrogen atom and an alkyl group, more preferably a hydrogen atom and an alkyl group having 1 to 4 carbon atoms.
  • Examples of the divalent protecting group formed by bonding the two Y 1 to each other include a substituted or unsubstituted divalent hydrocarbon group.
  • Examples of the substituted or unsubstituted divalent hydrocarbon group include the groups exemplified as the group represented by R 6 .
  • the preferred form of the divalent protecting group is the same as the preferred form of the divalent protecting group represented by Y 1b described later.
  • the monovalent organic group containing two or more protected alcoholic hydroxyl groups represented by R 1 and R 2 is preferably a group represented by the following formula (2a) or (2b).
  • R 7 is a divalent organic group having 1 to 10 carbon atoms.
  • p is an integer of 1 to 5.
  • q is an integer of 0 to 5.
  • Y 1a is each independently a monovalent protecting group.
  • Y 1b is a divalent protecting group.
  • Examples of the divalent organic group having 1 to 10 carbon atoms represented by R 7 include a substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms represented by R 6 , and this hydrocarbon group. And a group containing a hetero atom-containing group between carbon atoms or at the terminal thereof, a group in which part or all of the hydrogen atoms of these groups are substituted with a substituent, and the like.
  • substituent include those similar to those exemplified as the substituent of the group represented by X 1.
  • Examples of the divalent organic group having 1 to 10 carbon atoms represented by R 7 include a substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms and a carbon-carbon bond between the hydrocarbon groups.
  • a group containing a heteroatom is preferred, a substituted or unsubstituted alkanediyl group having 1 to 10 carbon atoms and a group containing a heteroatom at the carbon-carbon or terminal end of this alkanediyl group are more preferred, substituted or unsubstituted carbon
  • a linear alkanediyl group of 1 to 6 and a group containing an oxygen atom or a sulfur atom at the carbon-carbon boundary or at the terminal of the alkanediyl group are more preferable.
  • the two bonding positions are preferably at both ends.
  • the carbon number of the divalent organic group represented by R 7 is more preferably 1 to 3. By reducing the number of carbon atoms within the above range, the oxygen etching resistance of the obtained silicon-containing film can be further increased.
  • P is an integer of 1 to 5, preferably 1 and 2, and more preferably 1.
  • the q is an integer of 0 to 5, preferably 0 and 1, and more preferably 0.
  • Examples of the monovalent protecting group represented by Y 1a include R a —, R a —CO—, R a —O—C (R b ) 2 — and R a described in the description of formula (2).
  • a group represented by —O—CO— is preferred. Details of these groups and more preferable groups among these groups are as described in the description of the formula (2).
  • Examples of the divalent protecting group represented by Y 1b include a substituted or unsubstituted divalent hydrocarbon group.
  • Examples of the substituted or unsubstituted divalent hydrocarbon group include the groups exemplified as the group represented by R 6 .
  • the substituted or unsubstituted divalent hydrocarbon group is preferably a substituted or unsubstituted methanediyl group and a group represented by the following formula (4).
  • n is an integer of 0-4.
  • Each R c is independently a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms.
  • Each R d is independently a hydrogen atom or a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms.
  • Two R d s may be bonded to each other to form a carbocyclic structure having 4 to 12 carbon atoms (an alicyclic structure, an aromatic ring structure, or a combined ring structure thereof) together with the carbon chain to which they are bonded. . * Indicates a binding position.
  • Examples of the substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms represented by R c and R d include those exemplified as the group represented by R a .
  • R c is preferably an alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms, and still more preferably a methyl group.
  • R d is preferably an alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms, and still more preferably a methyl group.
  • N is an integer of 0 to 4, preferably 0 and 1, and more preferably 0.
  • Examples of the substituent that the methanediyl group represented by Y 1b may have include a hydrocarbon group in addition to the halogen atom described above, and is preferably a hydrocarbon group having 1 to 10 carbon atoms.
  • a hydrocarbon group is more preferred.
  • This hydrocarbon group may be an aliphatic hydrocarbon group such as an alkyl group or an aromatic hydrocarbon group such as a phenyl group.
  • Two substituents may be bonded to each other to form a ring structure together with the carbon atom to which they are bonded. Examples of the ring structure include alicyclic groups having 3 to 20 carbon atoms and aromatic groups.
  • Y 1b is a methanediyl group which may have a substituent
  • a methanediyl group having two hydrocarbon groups as a substituent is preferable. These two hydrocarbon groups may be bonded to each other to form an alicyclic structure.
  • Y 1 (Y 1a and Y 1b ), which is a protecting group for an alcoholic hydroxyl group, preferably forms an acetal-type or ester-type protecting group from the viewpoint of elimination by an acid or the like.
  • a is 0 or 1, but 0 is preferable. By setting a to 0, oxygen etching resistance of the obtained silicon-containing film can be increased.
  • the monovalent organic group containing one protected alcoholic hydroxyl group represented by R 1 and R 2 is not particularly limited, but includes a group represented by the following formula (3). Can be mentioned.
  • X 2 is a single bond or a divalent organic group having 1 to 20 carbon atoms.
  • Y 2 is a monovalent protecting group. * Indicates a binding site.
  • Examples of the divalent organic group having 1 to 20 carbon atoms represented by X 2 include those exemplified as the divalent organic group represented by R 7 .
  • the group represented by X 2 is preferably a substituted or unsubstituted divalent hydrocarbon group having 1 to 10 carbon atoms, and a group containing a hetero atom at the carbon-carbon end of the hydrocarbon group.
  • the two bonding positions are preferably at both ends.
  • Examples of the monovalent protecting group represented by Y 2 include those described as the monovalent protecting group represented by Y 1 and Y 1a .
  • the preferable group of the monovalent protecting group represented by Y 2 is the same as Y 1 and Y 1a . That is, groups represented by R a —, R a —CO—, R a —O—C (R b ) 2 —, and R a —O—CO— described in the description of the formula (2) are preferable. Specific structures of these groups and more preferable structures are also as described above.
  • Y 2 which is a protective group for an alcoholic hydroxyl group preferably forms an acetal-type or ester-type protective group from the standpoint of detachment by an acid.
  • Examples of the substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms that does not have a protected alcoholic hydroxyl group represented by R 2 include substituted or non-substituted groups represented by the above R a and R b. Examples thereof include the same groups as those exemplified as the substituted monovalent hydrocarbon group having 1 to 10 carbon atoms.
  • R 1 in the above formula (1) is preferably a monovalent organic group containing two or more protected alcoholic hydroxyl groups.
  • Structural unit R 1 is a monovalent organic group containing two or more alcoholic hydroxyl group protected
  • U X includes two or more alcoholic hydroxyl group protected, and hydrolyzable groups bonded to the silicon atom It is obtained by hydrolytic condensation of a silane monomer (I) having Examples of the hydrolyzable group include alkoxy groups such as methoxy group and ethoxy group, acyloxy groups such as acetoxy group, halogen atoms such as chlorine atom, and the like.
  • the silane monomer (I) preferably has 2 or 3 hydrolyzable groups, and more preferably has 3 hydrolyzable groups.
  • silane monomer (I) examples include compounds represented by the following formulas (i-1) to (i-27).
  • the silane monomer (I) may be used alone or in combination of two or more.
  • [A] structural units derived from the silane monomer having two or more alcoholic hydroxyl group protected in the polymer lower limit of the content of specifically structural unit U X (mol ratio d) is, [A] 0.1 mol% is preferable with respect to all structural units constituting the polymer, 1 mol% is more preferable, and 3 mol% is more preferable.
  • As this upper limit 40 mol% is preferable, 30 mol% is more preferable, 25 mol% is further more preferable, and 20 mol% is especially preferable.
  • the content of the structural unit U X is set to be lower than or equal the upper limit, it is possible to sufficiently contain other structural units, and antireflective properties, can be exhibited well-balanced etching resistance and the like.
  • the content ratio of the structural unit in the [A] polymer can be regarded as the same as the ratio of the charged amount of each corresponding silane monomer when the [A] polymer is synthesized by hydrolysis condensation of the silane monomer.
  • Examples of the monovalent organic group having a light-absorbing group that does not have a protected alcoholic hydroxyl group represented by R 3 include an alkenyl group having 2 to 10 carbon atoms or an aromatic group having 6 to 20 ring members. And monovalent groups containing a carbocyclic ring or an aromatic heterocyclic ring having 4 to 20 ring members. Some or all of the hydrogen atoms contained in these groups may be substituted with a substituent.
  • alkenyl group having 2 to 10 carbon atoms examples include ethenyl group, 1-propen-1-yl group, 1-propen-2-yl group, 1-propen-3-yl group and 1-buten-1-yl.
  • Examples of the monovalent group containing an aromatic carbocyclic ring having 6 to 20 ring members include phenyl group, naphthyl group, methylphenyl group, benzyl group, phenethyl group, ethylphenyl group, chlorophenyl group, bromophenyl group, and fluorophenyl. And an aryl group such as a group. Among these, a phenyl group and a methylphenyl group are preferable.
  • Examples of the monovalent group containing an aromatic heterocyclic ring having 4 to 20 ring members include a pyridyl group, a furyl group, and a thienyl group.
  • R 3 is preferably a group containing an aromatic carbocycle, more preferably an aryl group, and still more preferably a phenyl group and a methylphenyl group.
  • Examples of the substituted or unsubstituted monovalent hydrocarbon group having 1 to 20 carbon atoms which does not have a protected alcoholic hydroxyl group represented by R 4 include a substituted or unsubstituted 1 represented by Ra above.
  • the group similar to the group illustrated as a valent hydrocarbon group can be mentioned.
  • the silane monomer providing the structural unit U Y may include, for example, phenyl trimethoxysilane, phenyl triethoxysilane, methylphenyl trimethoxy silane, vinyl trimethoxy silane.
  • the lower limit of the content ratio (molar ratio e) of the structural unit U Y in the polymer preferably 0.1 mol% with respect to the total structural units constituting the [A] polymer, 1 mol% Gayori
  • 3 mol% is more preferable, and 5 mol% is especially preferable.
  • 40 mol% is preferable, 30 mol% is more preferable, 20 mol% is further more preferable, and 15 mol% is especially preferable.
  • the content of the structural unit U Y improving the adhesion and the like of the resist pattern by the above-mentioned range it is possible to more satisfactorily balanced manner exhibits antireflective properties and the like.
  • the non-light-absorbing substituted or unsubstituted monovalent aliphatic hydrocarbon group having no protected alcoholic hydroxyl group represented by R 5 is a substituted or unsubstituted group represented by Ra above.
  • the monovalent hydrocarbon group include monovalent chain hydrocarbon groups and monovalent alicyclic hydrocarbon groups. Some or all of the hydrogen atoms of these chain hydrocarbon group and alicyclic hydrocarbon group may be substituted with a substituent.
  • the number of carbon atoms of the group represented by R 5 can be, for example, 1 to 10, and in the case of an alicyclic hydrocarbon group, the number of carbon atoms can be 3 to 10.
  • R 5 is preferably a chain hydrocarbon group, more preferably a chain hydrocarbon group having 1 to 4 carbon atoms, and still more preferably a methyl group.
  • c is preferably 0 or 1, and more preferably 0.
  • the silane monomer providing the structural unit U Z for example, tetramethoxysilane, tetraethoxysilane, tetrabutoxysilane, methyl trimethoxysilane, methyl triethoxysilane, ethyl trimethoxysilane, dimethyldimethoxysilane and the like.
  • the content of the structural unit U Z in the above range, while increasing the adhesion or the like of the resist pattern, such as solvent resistance and etching resistance can be further improved.
  • the polymer may have a structural unit other than the structural unit U X , the structural unit U Y and the structural unit U Z.
  • other structural units include structural units derived from silane monomers containing a plurality of silicon atoms, such as hexamethoxydisilane, bis (trimethoxysilyl) methane, polydimethoxymethylcarbosilane, and the like.
  • the upper limit of the content ratio of the other structural units is preferably 20 mol% with respect to all the structural units constituting the [A] polymer, and is preferably 10 mol%. Is more preferable, 3 mol is more preferable, and 1 mol% is particularly preferable. That is, the lower limit of the sum (d + e + f) of d, e, and f in formula (1) is preferably 0.8, more preferably 0.9, even more preferably 0.97, and particularly preferably 0.99.
  • the lower limit of the content of the polymer is preferably 50% by mass, more preferably 70% by mass, still more preferably 80% by mass, and particularly preferably 90% by mass with respect to the total solid content of the film-forming material. preferable. As an upper limit of the said content, 99 mass% is preferable and 97 mass% is more preferable.
  • the total solid content of the film-forming material refers to the sum of components other than [B] organic solvent and [E] water. [A] Only one type of polymer may be contained, or two or more types may be contained.
  • the lower limit of the weight average molecular weight (Mw) in terms of polystyrene by size exclusion chromatography of the polymer is preferably 1,000, more preferably 1,300, and even more preferably 1,500.
  • the upper limit of Mw is preferably 100,000, more preferably 30,000, still more preferably 10,000, and particularly preferably 4,000.
  • the Mw of the [A] polymer in this specification is, for example, using a Tosoh GPC column (“G2000HXL”, “G3000HXL” and “G4000HXL”), flow rate: 1.0 mL / min, Elution solvent: Tetrahydrofuran, column temperature: A value measured by gel permeation chromatography (detector: differential refractometer) using monodisperse polystyrene as a standard under analysis conditions of 40 ° C.
  • the production method of the polymer can be obtained by a method of hydrolyzing and condensing a hydrolyzable silane monomer corresponding to each structural unit described above. This hydrolysis condensation of the silane monomer can be performed by a conventionally known method.
  • the upper limit of the content of the alcohol solvent having a boiling point of 100 ° C. or lower in the solvent in the reaction solution is preferably 20% by mass, and more preferably 5% by mass.
  • the alcohol solvent having a boiling point of 100 ° C. or less may be generated during the hydrolysis and condensation of each of the above silane monomers, and the content of the solvent in the reaction solution is 20% by mass or less, preferably 5% by mass or less. It is preferable to remove by distillation or the like.
  • Organic solvent Any organic solvent can be used as long as it can dissolve or disperse the polymer (polysiloxane) and optional components.
  • organic solvent examples include alcohol solvents, ketone solvents, ether solvents, ester solvents, nitrogen-containing solvents, and the like.
  • An organic solvent can be used individually by 1 type or in combination of 2 or more types.
  • the alcohol solvent examples include monoalcohol solvents such as methanol, ethanol, n-propanol, iso-propanol, n-butanol and iso-butanol, ethylene glycol, 1,2-propylene glycol, diethylene glycol, dipropylene glycol and the like.
  • monoalcohol solvents such as methanol, ethanol, n-propanol, iso-propanol, n-butanol and iso-butanol, ethylene glycol, 1,2-propylene glycol, diethylene glycol, dipropylene glycol and the like.
  • polyhydric alcohol solvents examples include polyhydric alcohol solvents.
  • ketone solvents include acetone, methyl ethyl ketone, methyl-n-propyl ketone, methyl-iso-butyl ketone, and cyclohexanone.
  • ether solvents include ethyl ether, iso-propyl ether, ethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, Tetrahydrofuran etc. are mentioned.
  • ester solvent examples include ethyl acetate, ⁇ -butyrolactone, n-butyl acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, acetic acid
  • Examples include propylene glycol monoethyl ether, dipropylene glycol monomethyl ether acetate, dipropylene glycol monoethyl ether acetate, ethyl propionate, n-butyl propionate, methyl lactate, and ethyl lactate.
  • nitrogen-containing solvent examples include N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone and the like.
  • ether solvents and ester solvents are preferable, and ether solvents and ester solvents having a glycol structure are more preferable because of excellent film-forming properties.
  • ether solvents and ester solvents having a glycol structure examples include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl acetate
  • examples include ether. Among these, propylene glycol monomethyl ether acetate is particularly preferable.
  • the organic solvents may be used singly or in combination of two or more.
  • the lower limit of the content of the [B] organic solvent in the film forming material is preferably 80% by mass, more preferably 90% by mass, and further preferably 95% by mass.
  • 99 mass% is preferable and 98 mass% is more preferable.
  • the nitrogen-containing compound is a compound having a nitrogen atom.
  • the film forming material contains a [C] nitrogen-containing compound, it is possible to further improve the shape of the resist pattern formed in the resist process while maintaining the above effects. Moreover, hardening can be accelerated
  • the nitrogen-containing compounds may be used alone or in combination of two or more.
  • the nitrogen-containing compound is preferably a compound having a basic amino group and a compound that generates a basic amino group by the action of an acid or the action of heat.
  • Examples of the compound having a basic amino group and the compound that generates a basic amino group by the action of an acid or the action of heat include amine compounds, amide group-containing compounds, urea compounds, nitrogen-containing heterocyclic compounds, and the like.
  • Examples of the amine compound include mono (cyclo) alkylamines, di (cyclo) alkylamines, tri (cyclo) alkylamines, substituted alkylanilines or derivatives thereof, ethylenediamine, N, N, N ′, N′— Tetramethylethylenediamine, tetramethylenediamine, hexamethylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl ether, 4,4'-diaminobenzophenone, 4,4'-diaminodiphenylamine, 2,2-bis ( 4-aminophenyl) propane, 2- (3-aminophenyl) -2- (4-aminophenyl) propane, 2- (4-aminophenyl) -2- (3-hydroxyphenyl) propane, 2- (4- Aminophenyl) -2- (4-hydroxyphenyl) propane 1,4-bis (1- (4-aminophenyl)
  • Examples of the amide group-containing compound include Nt-butoxycarbonyl-4-hydroxypiperidine, Nt-butoxycarbonyl-2-carboxy-4-hydroxypyrrolidine, and Nt-butoxycarbonyl-2-carboxypyrrolidine.
  • Nt-butoxycarbonyl group-containing amino compounds Nt-amyloxycarbonyl group-containing amino compounds such as Nt-amyloxycarbonyl-4-hydroxypiperidine, N- (9-anthrylmethyloxycarbonyl) piperidine, etc.
  • N- (9-anthrylmethyloxycarbonyl) group-containing amino compounds formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide, Piro Don, N- methylpyrrolidone, N- acetyl-1-adamantyl amine, and the like.
  • urea compounds include urea, methylurea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenylurea, tri-n-butylthiourea, etc. Is mentioned.
  • nitrogen-containing heterocyclic compound examples include imidazoles; pyridines; piperazines; pyrazine, pyrazole, pyridazine, quinosaline, purine, pyrrolidine, piperidine, piperidine ethanol, 3- (N-piperidino) -1,2-propanediol, Morpholine, 4-methylmorpholine, 1- (4-morpholinyl) ethanol, 4-acetylmorpholine, 3- (N-morpholino) -1,2-propanediol, 1,4-dimethylpiperazine, 1,4-diazabicyclo [2 2.2] octane and the like.
  • amide group-containing compounds and nitrogen-containing heterocyclic compounds are preferable, and amide group-containing compounds are more preferable.
  • the amide group-containing compound an Nt-butoxycarbonyl group-containing amino compound, an Nt-amyloxycarbonyl group-containing amino compound, and an N- (9-anthrylmethyloxycarbonyl) group-containing amino compound are preferable.
  • t-butoxycarbonyl-4-hydroxypiperidine, Nt-butoxycarbonyl-2-carboxy-4-hydroxypyrrolidine, Nt-butoxycarbonyl-2-carboxy-pyrrolidine, Nt-amyloxycarbonyl-4-hydroxy Piperidine and N- (9-anthrylmethyloxycarbonyl) piperidine are more preferred.
  • the lower limit of the content of the [C] nitrogen-containing compound is preferably 0.1 parts by mass with respect to 100 parts by mass of the [A] polymer. 1 part by mass is more preferred, and 3 parts by mass is still more preferred. As an upper limit of the said content, 30 mass parts is preferable, 15 mass parts is more preferable, and 10 mass parts is further more preferable.
  • the film-forming material may not substantially contain [C] nitrogen-containing compound, and the upper limit of the content of [C] nitrogen-containing compound is 100 mass of [A] polymer. 5 parts by mass, 1 part by mass, or 0.1 parts by mass may be used.
  • the acid generator is a compound that generates an acid upon irradiation with radiation such as ultraviolet rays and / or heating.
  • radiation such as ultraviolet rays and / or heating.
  • the film forming material contains a [D] acid generator, the surface of the resulting silicon-containing film can be further hydrophilized.
  • Examples of the acid generator include onium salts such as sulfonium salts, tetrahydrothiophenium salts and iodonium salts, sulfone compounds such as N-sulfonyloxyimide compounds, organic halogen compounds, disulfones and diazomethane sulfones. It is done.
  • Examples of the sulfonium salt include the sulfonium salts described in paragraph [0110] of JP-A-2014-037386, and more specifically, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluoro-n-butanesulfonate, Examples include triphenylsulfonium 2-bicyclo [2.2.1] hept-2-yl-1,1,2,2-tetrafluoroethane sulfonate, 4-cyclohexylphenyl diphenylsulfonium trifluoromethane sulfonate, and the like.
  • tetrahydrothiophenium salt examples include tetrahydrothiophenium salts described in paragraph [0111] of JP 2014-037386 A, and more specifically, 1- (4-n-butoxynaphthalene-1- Yl) tetrahydrothiophenium trifluoromethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium nonafluoro-n-butanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) And tetrahydrothiophenium 2-bicyclo [2.2.1] hept-2-yl-1,1,2,2-tetrafluoroethanesulfonate.
  • iodonium salts examples include iodonium salts described in paragraph [0112] of JP 2014-037386 A, and more specifically, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium.
  • examples include 2-bicyclo [2.2.1] hept-2-yl-1,1,2,2-tetrafluoroethane sulfonate, bis (4-t-butylphenyl) iodonium nonafluoro-n-butane sulfonate, and the like. .
  • N-sulfonyloxyimide compound examples include N-sulfonyloxyimide compounds described in paragraph [0113] of JP-A No. 2014-037386, and more specifically, N- (trifluoromethanesulfonyloxy) bicyclo [ 2.2.1] Hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-di Carboximide, N- (2-bicyclo [2.2.1] hept-2-yl-1,1,2,2-tetrafluoroethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene- 2,3-dicarboximide and the like can be mentioned.
  • Acid generators include compounds represented by the following formulas (4-1) to (4-7) which are sulfonium salts (hereinafter referred to as “compounds (4-1) to (4-7)”. Also referred to as).
  • [D] acid generators may be used alone or in combination of two or more.
  • the acid generator is preferably an onium salt, more preferably a sulfonium salt, still more preferably compounds (4-1) to (4-7), and particularly preferably compound (4-1).
  • the lower limit of the content of the [D] acid generator is preferably 0.1 parts by mass with respect to 100 parts by mass of the [A] polymer, 0.5 mass part is more preferable, 1 mass part is further more preferable, and 3 mass parts is further more preferable.
  • As an upper limit of the said content 30 mass parts is preferable, 20 mass parts is more preferable, 15 mass parts is further more preferable, and 10 mass parts is still more preferable.
  • the film forming material may not substantially contain the [D] acid generator, and the upper limit of the content of the [D] acid generator is [A] 100 mass of the polymer. 5 parts by mass, 1 part by mass, or 0.1 parts by mass may be used.
  • the film-forming material may contain [E] water as necessary. Since the film forming material further contains [E] water, the [A] polymer and the like are hydrated, so that the storage stability is improved. [E] By containing water, curing during film formation is promoted, and a dense silicon-containing film can be obtained.
  • the lower limit of the content of [E] water is preferably 0.01% by mass, more preferably 0.1% by mass, and further 0.3% by mass. preferable.
  • the upper limit of the content is preferably 10% by mass, more preferably 5% by mass, still more preferably 2% by mass, and particularly preferably 1% by mass.
  • the film forming material may contain other optional components in addition to the components [A] to [E].
  • other optional components include surfactants, colloidal silica, colloidal alumina, and organic polymers.
  • the said film forming material contains another arbitrary component, as an upper limit of the content, 2 mass parts is preferable with respect to 100 mass parts of [A] polymers, and 1 mass part is more preferable.
  • the method for preparing the film-forming material is not particularly limited.
  • the lower limit of the solid content concentration of the film forming material is preferably 0.01% by mass, more preferably 0.1% by mass, more preferably 0.5% by mass, and particularly preferably 1% by mass.
  • the upper limit of the solid content concentration is preferably 20% by mass, more preferably 10% by mass, further preferably 5% by mass, and particularly preferably 3% by mass.
  • the solid content concentration of the film forming material means that the mass of the solid content in the film forming material is measured by baking the film forming material at 250 ° C. for 30 minutes, and the mass of the solid content is the mass of the film forming material. It is a value (mass%) calculated by dividing.
  • a silicon-containing film obtained from the film-forming material has high adhesion to a resist film (resist pattern) or the like, and when used as a resist intermediate film, a resist pattern having a favorable shape can be formed on this surface. Therefore, the film-shaped material can be suitably used as a resist intermediate film forming material in a resist process, particularly in a multilayer resist process. Further, among the multilayer resist processes, it is particularly preferably used in pattern formation using a multilayer resist process in a region finer than 90 nm (ArF, ArF in immersion exposure, F 2 , EUV, nanoimprint, etc.). it can.
  • the silicon-containing film is formed by applying the film-forming material described above to the surface of another lower layer film such as a substrate or an organic lower layer film, and then heat-treating and curing the coating film. Can be formed.
  • Examples of the method for applying the film forming material include spin coating, roll coating, and dipping.
  • As temperature of heat processing it is 50 to 450 degreeC normally.
  • the average thickness of the formed silicon-containing film is usually from 10 nm to 200 nm.
  • the said film formation material can be used for resist process uses other than formation of the resist intermediate film in a resist process, such as the formation material of the pattern (reversal pattern) obtained through a reversal process, for example.
  • the pattern forming method includes a silicon-containing film forming process, a resist film forming process, an exposure process, and a developing process.
  • the pattern forming method may include an organic underlayer film forming process before the silicon-containing film forming process, and may include an etching process after the developing process.
  • each step will be described.
  • Organic underlayer formation process In this step, an organic underlayer film is formed on the side of the substrate on which the silicon-containing film is formed.
  • the substrate examples include an insulating film such as silicon oxide, silicon nitride, silicon oxynitride, and polysiloxane, and a resin substrate.
  • an interlayer insulating film such as a wafer coated with a low dielectric insulating film such as “Black Diamond” from AMAT, “Silk” from Dow Chemical, or “LKD5109” from JSR can be used.
  • a patterned substrate such as a wiring course (trench) or a plug groove (via) may be used.
  • the organic underlayer film is different from the silicon-containing film formed from the film forming material.
  • the organic underlayer film has a predetermined function (for example, an antireflection function) required to further supplement the function of the silicon-containing film and / or the resist film in forming the resist pattern, or to obtain a function that these do not have. , Coating film flatness, high etching resistance against fluorine-based gas such as CF 4 ).
  • organic underlayer film examples include an antireflection film.
  • an antireflection film for example, “NFC HM8006” manufactured by JSR Corporation may be mentioned as a commercially available product.
  • the organic underlayer film can be formed by applying a composition for forming an organic underlayer film by a spin coat method or the like to form a coating film and then heating.
  • a silicon-containing film is formed on at least one surface side of the substrate by using the film forming material described above.
  • the organic underlayer film is formed on the substrate, it is formed on the surface opposite to the substrate of the organic underlayer film. Thereby, the substrate with a silicon-containing film in which the silicon-containing film is formed on the substrate can be obtained.
  • the method for forming the silicon-containing film is not particularly limited.
  • the coating film formed by applying the film-forming material on the substrate by a known method such as a spin coating method is cured by exposure and / or heating. Can be formed.
  • Examples of the radiation used for exposure include visible light, ultraviolet light, far ultraviolet light, X-rays, electron beams, ⁇ -rays, molecular beams, ion beams, and the like.
  • As a minimum of the temperature at the time of heating a coating film 90 degreeC is preferable, 150 degreeC is more preferable, and 200 degreeC is further more preferable.
  • As an upper limit of the said temperature 550 degreeC is preferable, 450 degreeC is more preferable, and 300 degreeC is further more preferable.
  • the lower limit of the average thickness of the formed silicon-containing film is preferably 1 nm, more preferably 10 nm, and even more preferably 20 nm.
  • the upper limit of the average thickness is preferably 20,000 nm, more preferably 1,000 nm, and even more preferably 100 nm.
  • ⁇ Resist film formation process> In this step, a resist film is formed on the surface of the silicon-containing film opposite to the substrate.
  • the resist composition used for forming the resist film includes a radiation sensitive resin composition (chemically amplified resist) containing a polymer having an acid dissociable group and a radiation sensitive acid generator (radiation sensitive acid generator).
  • Composition a positive resist composition comprising an alkali-soluble resin and a quinonediazide-based photosensitizer, and a negative resist composition containing an alkali-soluble resin, a crosslinking agent, and a photosensitizer such as a photopolymerization initiator or photoacid generator.
  • the above chemical amplification resist composition is preferable.
  • a positive pattern can be formed by developing with an alkaline developer, and a negative pattern can be formed by developing with an organic solvent.
  • a double patterning method, a double exposure method, or the like which is a method for forming a fine pattern, may be used as appropriate.
  • the solid content concentration of the resist composition is not particularly limited, but is preferably 5% by mass or more and 50% by mass. Moreover, as a resist composition, what was filtered using the filter with a hole diameter of about 0.2 micrometer can be used conveniently. In the pattern forming method of the present invention, a commercially available resist composition can be used as it is as such a resist composition.
  • the method for applying the resist composition is not particularly limited, and can be applied by a conventional method such as a spin coating method.
  • the amount of the resist composition to be applied is adjusted so that the resulting resist film has a predetermined thickness.
  • the resist film can be formed by volatilizing the solvent in the coating film by pre-baking the coating film formed by applying the resist composition.
  • the pre-baking temperature is appropriately adjusted according to the type of resist composition to be used, and the like.
  • the lower limit of the pre-baking temperature is preferably 30 ° C., more preferably 50 ° C.
  • 200 degreeC is preferable and 150 degreeC is more preferable.
  • the resist film is exposed by selectively irradiating radiation through a photomask.
  • the radiation used for the exposure includes visible light, ultraviolet light, far ultraviolet light, X-rays, electron beams, ⁇ -rays, molecular beams, depending on the type of radiation-sensitive acid generator used in the resist composition.
  • far ultraviolet rays are preferable, and KrF excimer laser (248 nm), ArF excimer laser (193 nm), F 2 excimer laser (wavelength 157 nm), Kr 2 excimer laser ( A wavelength of 147 nm), an ArKr excimer laser (wavelength of 134 nm) and extreme ultraviolet light (wavelength of 13 nm, etc.) are more preferred.
  • the exposure method is not particularly limited, and can be performed in accordance with a conventionally known pattern formation method.
  • a resist pattern is formed by developing the exposed resist film.
  • the development may be alkaline development or organic solvent development, but when organic solvent development is used, particularly excellent resist pattern adhesion can be exhibited.
  • Examples of the developer used for alkali development include sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia, ethylamine, n-propylamine, diethylamine, di-n-propylamine, triethylamine, and methyl. Diethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, choline, 1,8-diazabicyclo [5.4.0] -7-undecene, 1,5-diazabicyclo [ 4.3.0] -5-nonene and the like.
  • These alkaline aqueous solutions may be those obtained by adding an appropriate amount of a water-soluble organic solvent, for example, alcohols such as methanol and ethanol, surfactants and the like.
  • the developer used for organic solvent development is an organic solvent-containing solution.
  • the developer include ketone solvents, alcohol solvents, amide solvents, ether solvents, ester solvents, and the like.
  • these solvents include those similar to the respective solvents exemplified as the [B] organic solvent. These solvents may be used singly or in combination, or may be used by mixing with water.
  • the polarity of the exposed portion is increased, so that the exposed portion becomes a resist pattern.
  • the exposed portion on the surface of the silicon-containing film formed from the film forming material has increased hydrophilicity due to the acid generated by the acid generator. Therefore, the adhesion between the resist film (resist pattern) and the silicon-containing film is high with respect to the organic solvent that is the developer, and pattern collapse or the like can be suppressed.
  • a predetermined resist pattern corresponding to the photomask can be formed by performing development with a developer, washing, and drying.
  • the post-baking temperature is appropriately adjusted according to the type of resist composition used, but the lower limit of the post-baking temperature is preferably 50 ° C., more preferably 80 ° C. As an upper limit of the said temperature, 200 degreeC is preferable and 150 degreeC is more preferable.
  • the dry etching can be performed using a known dry etching apparatus.
  • a source gas at the time of dry etching although depending on the elemental composition of the film to be etched, for example, fluorine gas such as CHF 3 , CF 4 , C 2 F 6 , C 3 F 8 , SF 6 , Cl 2 , Chlorine gas such as BCl 3 , oxygen gas such as O 2 and O 3 , H 2 , NH 3 , CO, CO 2 , CH 4 , C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 Reducing gas such as H 4 , C 3 H 6 , C 3 H 8 , HF, HI, HBr, HCl, NO, NH 3 , BCl 3 , inert gas such as He, N 2 , Ar, etc. are used, These gases can also be mixed and used.
  • a fluorine-based gas is usually used, and a mixture
  • the resist underlayer film is also dry etched together with the silicon-containing film and the substrate.
  • a predetermined pattern can be formed by appropriately performing the above steps.
  • the polymer which concerns on one Embodiment of this invention is a polymer which has a structure represented by the said Formula (1).
  • the details of the polymer are as described above for the [A] polymer that is a component of the “film forming material for resist process”, and the description thereof is omitted here.
  • the polymer can be suitably used as a main component of a film forming material for a resist process that has excellent adhesion to a resist film and can form a pattern having a good shape.
  • the solid content concentration and the weight average molecular weight (Mw) of the polymer solution in this example were measured by the following methods.
  • Solid content concentration of polymer solution By baking 0.5 g of the polymer solution at 250 ° C. for 30 minutes, the mass of the solid content relative to 0.5 g of the polymer solution was measured, and the solid content concentration (% by mass) of the polymer solution was calculated.
  • Average thickness of film The average thickness of the film was measured using a spectroscopic ellipsometer (“M2000D” from JA WOOLLAM).
  • Example 1 Synthesis of Polymer A-1
  • An aqueous tetraammonium hydroxide solution was prepared by dissolving 7.22 g of tetramethylammonium hydroxide in 21.67 g of water by heating. Thereafter, a cooling tube and a dropping funnel charged with a silane monomer were set in a reaction vessel containing the prepared tetraammonium hydroxide aqueous solution and 40.89 g of methanol.
  • the silane monomer includes a compound represented by the chemical formula (M-1), a compound represented by the chemical formula (M-2), a compound represented by the chemical formula (M-3), and a compound represented by the chemical formula (M-4) in a molar ratio of 50.
  • the total mass of the silane monomer was 30.21 g.
  • the liquid mixture of the said adjusted silane monomer was dripped over 10 minutes.
  • the dripping start was set as the reaction start time, and the reaction was carried out at 60 ° C. for 4 hours.
  • the reaction vessel was cooled to 10 ° C. or lower.
  • reaction solution in the reaction vessel was dropped into a maleic acid aqueous solution at 10 ° C. or lower prepared by dissolving 9.33 g of maleic anhydride in 34.25 g of water, and the mixture was stirred at 10 ° C. or lower for 30 minutes.
  • 143.58 g of 1-butyl alcohol and water were added, and liquid-liquid extraction with a separatory funnel water was performed to obtain a 1-butanol solution of the polysiloxane polymer (A-1).
  • propylene glycol monoethyl ether acetate 143.58 g was added and 1-butanol was removed using an evaporator to obtain a propylene glycol monoethyl ether acetate solution of the polymer (A-1).
  • the solid content concentration of the polymer (A-1) solution in propylene glycol monoethyl ether acetate was 9.8% by mass.
  • the polymer (A-1) had a weight average molecular weight (Mw) of 1,780.
  • Example 13 Synthesis of polymer (A-13)
  • An aqueous oxalic acid solution was prepared by dissolving 0.75 g of oxalic acid in 11.23 g of water by heating.
  • the reaction vessel was charged with silane monomer and 14.09 g of methanol.
  • silane monomer compound (M-1), compound (M-2), compound (M-3) and compound (M-10) were used at a molar ratio of 30/50/10/10 (mol%).
  • the total mass of the silane monomer was 23.93 g.
  • a dropping funnel containing the cooling tube and the prepared oxalic acid aqueous solution was set in the reaction vessel.
  • the said oxalic acid aqueous solution was dripped over 10 minutes.
  • the dripping start was set as the reaction start time, and the reaction was carried out at 60 ° C. for 4 hours.
  • the inside of the reaction vessel was cooled to 30 ° C or lower.
  • water and generated alcohols are removed using an evaporator to obtain a propylene glycol monoethyl ether solution of the polymer (A-13). It was.
  • the solid content concentration of the polymer (A-13) solution in propylene glycol monoethyl ether acetate was 12.1% by mass. Further, Mw of the polymer (A-13) was 1,850.
  • Example 14 Comparative Example 2
  • a polymer (A-14) and a polymer (a-2) were synthesized in the same manner as in Example 13 except that the silane monomers having the types and amounts used shown in Table 1 below were used.
  • the solid content concentration (% by mass) of the obtained polymer solution and the Mw of the [A] polymer are shown together in Table 1.
  • D-1 4-cyclohexylphenyldiphenylsulfonium 2,4-difluorobenzene-1-sulfonate
  • the structural formula is shown below.
  • Example 15 [A] 2.0 parts by mass of (A-1) as a polymer (solid content), [B] 97.4 parts by mass of (B-1) as an organic solvent (included in the solution of [A] polymer Solvent (B-1) is also included), [D] 0.1 part by mass of (D-1) as an acid generator, and 0.5 part by mass of [E] water are mixed, and the resulting mixed solution is mixed with a pore size. Filtration through a 0.2 ⁇ m filter gave a film forming material (J-1) for resist processing.
  • the obtained film forming material for process was applied onto a silicon wafer by a spin coat method using a spin coater (“CLEAN TRACK ACT12” manufactured by Tokyo Electron Ltd.).
  • the obtained coating film was heat-treated on a hot plate at 220 ° C. for 60 seconds and then cooled at 23 ° C. for 60 seconds, whereby an average thickness of 30 nm shown in Examples 15 to 28 and Comparative Examples 3 and 4 in Table 2 was obtained.
  • a substrate on which the silicon-containing film was formed was obtained.
  • An antireflection film-forming material (“HM8006” manufactured by JSR) was spin-coated on a 12-inch silicon wafer, followed by heat treatment at 250 ° C. for 60 seconds to form an antireflection film having an average thickness of 100 nm.
  • the obtained film forming material for a resist process was spin-coated using the spin coater, heat-treated at 220 ° C. for 60 seconds, and then cooled at 23 ° C. for 60 seconds.
  • a silicon-containing film having a thickness of 30 nm was formed.
  • a resist material (“ARF AR2772JN” from JSR) is spin-coated on this silicon-containing film, heat-treated at 90 ° C. for 60 seconds, and then cooled at 23 ° C. for 30 seconds to form a resist film having an average thickness of 100 nm. Formed.
  • the exposure amount formed a resist pattern having a line width of 42 nm and a distance (space) between adjacent lines of 84 nm (line and space is 1 to 2).
  • (MJ / cm 2 ) was set as the optimum exposure amount, and the exposure amount was increased stepwise from the optimum exposure amount, and the exposure was sequentially performed.
  • the line width corresponding to the maximum exposure amount at which the resist pattern collapse was not confirmed was defined as the minimum pre-collapse dimension (nm) and used as an index for pattern collapse resistance.
  • the minimum dimension before collapse is “A” (good) when it is 30 nm or less, “B” (slightly good) when it is over 30 nm and 40 nm or less, and when it is over 40 nm or cannot be evaluated due to pattern collapse Evaluated as “C” (bad).
  • the pattern shape was evaluated as “A” when the bottom of the resist pattern was not skirted, “B” when pattern collapse or skirting could be confirmed, and “C” when pattern collapse or skirting could be confirmed at many locations. .
  • the silicon-containing film thus formed was O 2 treated at 100 W for 120 seconds using a dry etching apparatus (“Telius SCCM” manufactured by Tokyo Electron Ltd.), and the difference in film thickness before and after the treatment was measured.
  • the oxygen etching resistance is “A” (good) when the difference in film thickness before and after treatment is less than 10 nm, “B” (slightly good) when it is 10 nm or more and 15 nm or less, and “C” when it exceeds 15 nm. (Poor).
  • the resist composition has excellent resistance to solvents, excellent antireflection properties, etching resistance, good resist pattern shape, and low silicon content It can be seen that a film can be formed.
  • the film forming material for a resist process according to the present invention can be suitably used as a material for forming various silicon-containing films such as a resist intermediate film and a resist underlayer film in a resist process.

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Abstract

Le but de la présente invention est de concevoir : un matériau de formation de film pour procédé de réserve dans lequel il est possible de former un film contenant du silicium présentant une adhésion exceptionnelle vis-à-vis des films de réserve, les motifs de réserve présentant une excellente forme et la fréquence de désagrégement étant faible ; un procédé de formation de motif dans lequel le matériau de formation de film pour procédé de réserve est utilisé ; et un polymère approprié en tant que matériau de formation de film pour un procédé de réserve. Le matériau de formation de film pour un procédé de réserve contient un polymère comportant des motifs structuraux dérivés de monomères de silane qui ont au moins deux groupes hydroxyle alcooliques protégés, et un solvant organique. Le procédé de formation de motif comporte : une étape de formation d'un film contenant du silicium sur au moins une surface d'un substrat à l'aide d'un matériau de formation de film pour procédé de réserve ; une étape de formation d'un film de réserve sur la surface du film contenant du silicium opposée au substrat à l'aide d'une composition de résine sensible au rayonnement qui comprend un générateur d'acide sensible au rayonnement et un polymère ayant un groupe de dissociatif à l'acide ; une étape consistant à exposer le film de réserve ; et une étape consistant à développer le film de réserve exposé.
PCT/JP2017/006231 2016-03-10 2017-02-20 Matériau de formation de film pour procédé de réserve, procédé de formation de motif et polymère WO2017154545A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100633A1 (fr) * 2018-11-13 2020-05-22 東京エレクトロン株式会社 Procédé de traitement de substrat et dispositif de traitement de substrat

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63101388A (ja) * 1986-10-03 1988-05-06 ダウ　コーニング　コーポレーション ジオキソラン置換有機ケイ素化合物及びその製造方法
JP2005048152A (ja) * 2002-12-24 2005-02-24 Shin Etsu Chem Co Ltd 高分子化合物、反射防止膜材料及びパターン形成方法
WO2005077960A1 (fr) * 2004-02-16 2005-08-25 Toagosei Co., Ltd. Nouveau composé organosilicié, résine organosiliciée ayant un diol et procédés servant à produire ceux-ci
JP2005352107A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2006009000A (ja) * 2004-05-28 2006-01-12 Toray Fine Chemicals Co Ltd 水酸基を有するシリコーン共重合体及びその製造方法
JP2007015974A (ja) * 2005-07-07 2007-01-25 Shin Etsu Chem Co Ltd 含フッ素環状構造を有するケイ素化合物及びシリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
WO2012039337A1 (fr) * 2010-09-21 2012-03-29 日産化学工業株式会社 Composition contenant du silicium pour la formation d'un film de sous-couche de résist, qui contient un groupe organique contenant un alcool aliphatique protégé
JP2015129908A (ja) * 2013-11-01 2015-07-16 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
WO2016009965A1 (fr) * 2014-07-15 2016-01-21 日産化学工業株式会社 Composition permettant de former une sous-couche de réserve comprenant du silicium et présentant un groupe organique contenant une structure aliphatique polycyclique
WO2016080226A1 (fr) * 2014-11-19 2016-05-26 日産化学工業株式会社 Composition filmogène contenant une silicone réactive réticulable
WO2016121686A1 (fr) * 2015-01-30 2016-08-04 日産化学工業株式会社 Composition de formation de film de sous-couche de réserve de lithographie contenant un silane hydrolysable à squelette de carbonate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014010352A (ja) * 2012-06-29 2014-01-20 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、並びに、該組成物を用いたレジスト膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス
JP5713508B2 (ja) * 2013-05-31 2015-05-07 愼一 石井 免振装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63101388A (ja) * 1986-10-03 1988-05-06 ダウ　コーニング　コーポレーション ジオキソラン置換有機ケイ素化合物及びその製造方法
JP2005048152A (ja) * 2002-12-24 2005-02-24 Shin Etsu Chem Co Ltd 高分子化合物、反射防止膜材料及びパターン形成方法
WO2005077960A1 (fr) * 2004-02-16 2005-08-25 Toagosei Co., Ltd. Nouveau composé organosilicié, résine organosiliciée ayant un diol et procédés servant à produire ceux-ci
JP2006009000A (ja) * 2004-05-28 2006-01-12 Toray Fine Chemicals Co Ltd 水酸基を有するシリコーン共重合体及びその製造方法
JP2005352107A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 犠牲膜形成用組成物、パターン形成方法、犠牲膜及びその除去方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2007015974A (ja) * 2005-07-07 2007-01-25 Shin Etsu Chem Co Ltd 含フッ素環状構造を有するケイ素化合物及びシリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
WO2012039337A1 (fr) * 2010-09-21 2012-03-29 日産化学工業株式会社 Composition contenant du silicium pour la formation d'un film de sous-couche de résist, qui contient un groupe organique contenant un alcool aliphatique protégé
JP2015129908A (ja) * 2013-11-01 2015-07-16 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
WO2016009965A1 (fr) * 2014-07-15 2016-01-21 日産化学工業株式会社 Composition permettant de former une sous-couche de réserve comprenant du silicium et présentant un groupe organique contenant une structure aliphatique polycyclique
WO2016080226A1 (fr) * 2014-11-19 2016-05-26 日産化学工業株式会社 Composition filmogène contenant une silicone réactive réticulable
WO2016121686A1 (fr) * 2015-01-30 2016-08-04 日産化学工業株式会社 Composition de formation de film de sous-couche de réserve de lithographie contenant un silane hydrolysable à squelette de carbonate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020100633A1 (fr) * 2018-11-13 2020-05-22 東京エレクトロン株式会社 Procédé de traitement de substrat et dispositif de traitement de substrat

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