WO2017154339A1 - 接続基板の製造方法 - Google Patents
接続基板の製造方法 Download PDFInfo
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- WO2017154339A1 WO2017154339A1 PCT/JP2017/000769 JP2017000769W WO2017154339A1 WO 2017154339 A1 WO2017154339 A1 WO 2017154339A1 JP 2017000769 W JP2017000769 W JP 2017000769W WO 2017154339 A1 WO2017154339 A1 WO 2017154339A1
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- main surface
- glass
- paste
- hole
- substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 239000000919 ceramic Substances 0.000 claims abstract description 65
- 239000004020 conductor Substances 0.000 claims abstract description 39
- 239000011148 porous material Substances 0.000 claims abstract description 35
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 8
- 239000002585 base Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 239000002002 slurry Substances 0.000 description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/26—Cleaning or polishing of the conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0116—Porous, e.g. foam
Definitions
- the present invention relates to a method of manufacturing an electrical connection board in which a through conductor such as a via conductor is formed in a through hole.
- a substrate for mounting an electronic device such as a SAW filter
- a substrate (via substrate) having a structure in which a through hole is provided in an insulating substrate such as ceramic and the hole is filled with a conductor to form a through electrode is used.
- insulating substrate such as ceramic
- the via substrate which is a component, is also required to be thin. It has been.
- the wiring on the substrate surface needs to be miniaturized for miniaturization, it is required to reduce the diameter of the through electrode and to increase the accuracy of the position. Furthermore, since these fine wirings are formed by photolithography or plating, it is particularly required that the through electrodes be dense and have high water tightness in order to prevent problems caused by the ingress of chemicals in the resist coating process and plating process. ing.
- Patent Document 1 discloses a method of preventing the resist solution from entering by forming a conductive protective film on the surface of a porous through electrode.
- the insulating substrate is thin, the air permeability of the through electrode is increased, so that the strength of the conductive protective film is insufficient and does not function as a protective film.
- Patent Document 2 discloses a method of filling a void with a second conductor after forming a porous first conductor as a through electrode.
- a ceramic substrate is used, cracks and warpage of the substrate are likely to occur when the substrate is thinned due to the difference in thermal expansion between the metal that is the conductive material and the ceramic.
- Patent Document 4 discloses a method in which an active metal layer is formed between a ceramic substrate and a through electrode by filling a through hole of the ceramic substrate with a metal containing an active metal, thereby densifying the ceramic substrate.
- the metal brazing containing the active metal since the metal brazing containing the active metal has a very high viscosity, it cannot be filled well if the through electrode diameter is small.
- Patent Document 4 discloses a method of using a conductive paste containing an expansion material when forming a through electrode. However, it is difficult to fill all the cavities with only the expansion material, and the denseness of the through electrode cannot be obtained particularly when the plate is thinned.
- Patent Document 5 discloses a method of filling a glass paste after disposing a granular conductive material in each through hole of a ceramic substrate.
- cracks and warpage due to the difference in thermal expansion between the ceramic and the spherical conductive material are likely to occur.
- the through hole is small, it is difficult to arrange the spherical conductive material.
- An object of the present invention is to improve the water tightness of a through hole when manufacturing a connection board including a ceramic substrate and a through conductor provided in the through hole.
- the present invention has a first main surface and a second main surface, and a metal paste is supplied to the through hole of the ceramic base material provided with the through hole, and a porous metal body is generated by heating.
- the glass paste is applied on the main surface of the metal porous body, the glass paste is impregnated into the open pores of the metal porous body, and baked. And the penetration conductor is exposed to the 1st main surface side by removing the glass layer which remained on the 1st main surface side of the ceramic base material.
- the through conductor in the through hole of the ceramic substrate is made of a metal porous body and a glass phase, the difference in thermal expansion between the through conductor and the ceramic is mitigated, and cracks and warpage are unlikely to occur.
- the glass paste is filled into the open pores of the metal porous body from the first main surface side and baked to generate a glass phase. Therefore, the glass substrate is watertight by the glass phase on the first main surface side of the ceramic substrate. And the watertightness of the entire connection board is improved.
- FIG. (A) is a top view which shows typically the ceramic base material 1 in which the through-hole 2 was arranged
- (b) is a cross-sectional view of the ceramic base material 1.
- FIG. (A) shows a state in which the metal paste 3 is filled in the through-holes of the ceramic substrate 1
- (b) shows a state in which the metal paste 3 is baked to form the metal porous body 4
- (c) The state which formed the glass layer 9 on the 1st main surface 1a of the ceramic base material 1 is shown
- (d) shows the state which removed the glass layer 9.
- FIG. FIG. 2A is a plan view schematically showing the connection substrate 10 in which the through conductor 11 is formed in the through hole 2 ⁇ / b> A
- 2B is a cross-sectional view of the connection substrate 10. It is a schematic diagram which shows the structure of the metal porous body 4 produced
- the ceramic substrate 1 is provided with one main surface 1a and the other main surface 1b, and a large number of through holes 2 penetrating between the main surfaces 1a and 1b are formed. Yes.
- the through hole 2 has an opening 2a on the first main surface 1a side and an opening 2b on the second main surface 1b side.
- a metal paste 3 is filled in the opening 2 of the ceramic substrate 1. Then, by heating the metal paste 3, the metal paste is baked to form a porous metal body 4 in the through hole 2 as shown in FIG.
- Reference numeral 5 denotes a first main surface of the metal porous body 4, and 6 denotes a second main surface of the metal porous body 4.
- a glass paste is applied on the first main surface 1a of the ceramic substrate 1 to form a glass paste layer.
- the glass paste applied on the first main surface 5 of the metal porous body 4 is impregnated into the open pores in the metal porous body 4.
- the glass paste is cured by heating and baking.
- the glass layer 9 is formed on the 1st main surface 1a of the ceramic base material 1.
- the glass paste impregnated in the open pores of the metal porous body is cured to generate a glass phase, thereby generating the through conductor 7 in the through hole.
- Reference numeral 8 denotes a first main surface of the through conductor 8.
- the through conductor is exposed on the first main surface side of the ceramic base material to obtain a connection substrate.
- the first main surface 1a of the ceramic base material 1 is further polished to form a polished surface 1c as shown in FIG.
- the through conductors 11 are filled in the through holes 2A.
- 11 a is a first main surface of the through conductor 11
- 11 b is a second main surface of the through conductor 11.
- the metal porous body 4 is formed in the through hole 2 by baking the metal paste.
- the metal porous body 4 extends from the first main surface 1a of the ceramic substrate 1 to the second main surface 1b.
- 5 is the first main surface of the porous metal body, and 6 is the other main surface.
- the metal porous body 4 includes a metal matrix (matrix) 20 and pores 16A, 16B, 16C, and 16D.
- the pores generated in the matrix include open pores 16A and 16D that open to the first main surface 5, open pores 16B that open to the second main surface 6, and closed pores that do not open to the openings 5 and 6.
- the open pores 16A are open to the first main surface 5 in the cross section of FIG.
- the open pores 16D are not opened in the first main surface 5 in the cross section of FIG. 4, but are opened in the first main surface 5 along a route that does not appear in the cross section.
- the open pores 16A and 16D are distinguished.
- the inventor forms a glass layer by applying a glass paste to the first main surface 1a side, and part of the glass paste into the open pores 16A and 16D as the first main surface. It was conceived to impregnate from the 5th side.
- the glass paste is impregnated from the first main surface side into the open pores 16A and 16D opened in the first main surface 5.
- the glass layer 18 is formed on the first main surface 1a, and at the same time, the glass phase 19 is formed in the open pores 16A and 16D.
- the glass phase 17 originally present in the porous metal body may be mixed with the glass phase 19 generated by impregnation and baking of the glass paste.
- the polishing surface 1c is formed on the ceramic substrate 1A, and the thickness of the ceramic substrate 1A is smaller than that before polishing.
- a through conductor 11 is formed in the through hole 2A. Even in this state, at least the first principal surface side 11 a of the open pores is blocked by the glass phase 19. As a result, since the open pores communicating from the first main surface 11a to the second main surface 11b do not remain, the water tightness is remarkably improved.
- the thickness of the ceramic substrate is 25 to 150 ⁇ m, and the diameter W of the through hole is 20 ⁇ m to 70 ⁇ m.
- the present invention is particularly useful for such a small and thin connection substrate.
- the diameter W of the through hole formed in the ceramic substrate is more preferably 25 ⁇ m or more from the viewpoint of ease of forming.
- the distance D (distance between the nearest through holes) between adjacent through holes 2 is preferably 50 ⁇ m or more, and more preferably 100 ⁇ m or more, from the viewpoint of suppressing breakage and cracks.
- the distance D between the adjacent through holes 2 is preferably 1000 ⁇ m or less, and more preferably 500 ⁇ m or less, from the viewpoint of improving the density of the through holes.
- the method for forming the through hole in the ceramic substrate is not particularly limited.
- a through hole can be formed in a green sheet of a ceramic substrate by pins or laser processing.
- a through-hole can also be formed in a blank substrate by laser processing.
- Ceramics constituting the ceramic substrate include Al2O3, AlN, ZrO2, Si, Si3N4, and SiC.
- a metal paste is supplied to the through holes, and a metal porous body is generated by heating.
- the metal that is the main component constituting such a metal paste include Ag, Au, Cu, Pd, or a mixture thereof.
- glass components include SiO2, Al2O3, bismuth oxide, zinc oxide, vanadium oxide, tin oxide, tellurium oxide, alkali metal oxide, and fluorine.
- the baking temperature of the metal paste is appropriately selected depending on the type of paste, and can be set to 500 to 900 ° C., for example.
- a glass paste is applied to the first main surface of the metal porous body, and the open pores of the metal porous body are impregnated with the glass paste.
- the glass paste can be applied over the entire first main surface of the ceramic substrate.
- the glass paste may be applied only on the first main surface of the porous metal body by screen printing or the like, and the glass paste may not be applied on the other ceramic surfaces.
- the glass paste is cured by heating to form a glass layer on the main surface of the porous metal body, and the glass paste impregnated in the open pores is used as the glass phase.
- the baking temperature of the glass paste is appropriately selected depending on the type of paste, and can be set to 500 to 900 ° C., for example.
- connection substrate having a ceramic substrate and a through conductor provided in the through hole is obtained.
- the first main surface of the ceramic substrate is preferably polished.
- predetermined wiring, a pad, etc. are formed in each main surface 11a, 11b of a ceramic substrate.
- the ceramic substrate is an integral relay substrate.
- the ceramic substrate is preferably precision polished.
- CMP Chemical Mechanical Polishing
- polishing slurry a slurry in which abrasive grains having a particle size of 30 nm to 200 nm are dispersed in an alkali or neutral solution is used.
- the abrasive material include silica, alumina, diamond, zirconia, and ceria, which are used alone or in combination.
- a hard urethane pad, a nonwoven fabric pad, and a suede pad can be illustrated as a polishing pad.
- Example 1 A connection substrate was fabricated as described with reference to FIGS. Specifically, first, a slurry in which the following components were mixed was prepared.
- (Raw material powder) ⁇ -alumina powder having a specific surface area of 3.5 to 4.5 m 2 / g and an average primary particle size of 0.35 to 0.45 ⁇ m (alumina purity 99.99%) 100 parts by mass • MgO (magnesia) 250 ppm ⁇ ZrO 2 (zirconia) 400ppm ⁇ Y 2 O 3 (yttria) 15ppm
- Disersion medium ⁇ 45 parts by weight of 2-ethylhexanol (binder) ⁇ PVB (polyvinyl butyral) resin 4 parts by weight (dispersant) ⁇ Polymer surfactant 3 parts by weight (plasticizer) ⁇ DOP 0.1 parts by weight
- the slurry was formed into a tape shape using a doctor blade method so that the thickness after firing was 250 ⁇ m, and the slurry was cut so as to have a diameter of 100 mm when converted into a size after firing.
- the obtained powder compact is calcined at 1240 ° C. in the atmosphere (preliminary firing), and then the substrate is placed on a molybdenum plate and heated at a rate of 1300 ° C. to 1550 ° C. in an atmosphere of hydrogen 3: nitrogen 1. Was kept at 1550 ° C. for 2.5 hours and baked to obtain a blank substrate.
- the blank substrate was laser processed under the following conditions to form through holes having the following dimensions.
- CO 2 laser wavelength 10.6 ⁇ m
- Pulse 1000Hz- On time 12 ⁇ s
- Laser mask diameter 0.9 mm
- Number of shots 35 times Through-hole diameter
- W 0.65 mm
- Through hole interval D 0.3 mm
- Number of through-holes 40000 pieces / piece
- the melt (dross) adhering to the substrate surface was removed by grinding with a grinder, and then annealed at 1300 ° C. for 5 hours in the atmosphere to obtain a ceramic substrate having a thickness of 180 ⁇ m.
- the Ag paste was embedded in the through hole by printing.
- the Ag paste contains 10% or less glass component.
- it baked at 750 degreeC and formed the metal porous body in the through-hole.
- a low melting point borosilicate glass paste was printed on the first main surface of the ceramic substrate, and the glass paste was melted at 670 ° C.
- connection substrate was removed by polishing to obtain a connection substrate. Specifically, after grinding with a grinder with the substrate attached to an alumina plate, lapping with diamond slurry was performed on both sides. The particle size of diamond was 3 ⁇ m. Finally, CMP processing using SiO 2 abrasive grains and diamond abrasive grains was performed. Thereafter, the substrate was peeled off from the alumina plate, the same processing was performed on the main surface on the opposite side, and washing was performed to obtain a connection substrate. An enlarged photograph of the obtained through conductor is shown in FIG.
- the water tightness of the through conductor of the obtained connection board was confirmed by the method described with reference to FIG. That is, the porous plate 21 was fixed to the pedestal 22, the dust-free paper 23 was placed on the pedestal 22, and the ceramic substrate sample 24 was placed thereon. Water 26 was dropped onto the through hole of the ceramic substrate 24 and sucked as indicated by an arrow A. Then, it was confirmed whether or not moisture was observed on the dust-free paper.
- the number of through conductors in which liquid leakage was observed was 1 for 40000 through conductors provided on one ceramic substrate.
- Example 1 An Ag paste was embedded in each through-hole of the same ceramic substrate as in Example 1.
- the Ag paste used is the same as in the examples. Then, it baked at 750 degreeC and formed the metal porous body in the through-hole.
- both main surfaces of the ceramic base material were precision-polished without carrying out a step of printing the glass paste on the first main surface of the ceramic base material to obtain a connection substrate.
- Example 2 a water tightness test was conducted in the same manner as in Example 1. As a result, liquid leakage was observed in almost all of the 40000 through conductors provided on one ceramic substrate.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
Description
前記金属多孔体の主面にガラスペーストを塗布すると共に前記金属多孔体の開気孔中に前記ガラスペーストを含浸させる工程;
加熱によって前記ガラスペーストを硬化させることで、前記金属多孔体の主面上にガラス層を形成し、かつ前記開気孔に含浸した前記ガラスペーストをガラス相とする工程;および
前記ガラス層を除去することで、セラミック基板と、前記貫通孔内に設けられた貫通導体とを備える接続基板を得る工程
を有しており、前記貫通導体が、前記金属多孔体と前記ガラス相を備えることを特徴とする。
図1に示すように、セラミック基材1には一方の主面1aと他方の主面1bとが設けられており、主面1aと1bとの間を貫通する貫通孔2が多数形成されている。貫通孔2には、第一の主面1a側の開口2aと、第二の主面1b側の開口2bとがある。
図2(b)に示すように、金属ペーストを焼き付けることによって、貫通孔2中に金属多孔体4を形成する。ここで、本例では、金属多孔体4は、セラミック基材1の第一の主面1aから第二の主面1bへと延びている。5は金属多孔体の第一の主面であり、6は他方の主面である。
好適な実施形態においては、セラミック基板の厚さが25~150μmであり、貫通孔の径Wが20μm~70μmである。本発明は、このような小型で薄い接続基板に対して特に有用である。
図1~図6を参照しつつ説明したようにして接続基板を作製した。
具体的には、まず以下の成分を混合したスラリーを調製した。
(原料粉末)
・比表面積3.5~4.5m2/g、平均一次粒子径0.35~0.45μmのα-アルミナ粉末(アルミナ純度99.99%)
100質量部
・MgO(マグネシア) 250pppm
・ZrO2(ジルコニア) 400ppm
・Y2O3(イットリア) 15ppm
(分散媒)
・2-エチルヘキサノール 45重量部
(結合剤)
・PVB(ポリビニルブチラール)樹脂 4重量部
(分散剤)
・高分子界面活性剤 3重量部
(可塑剤)
・DOP 0.1重量部
CO2レーザー:波長 10.6μm
パルス:1000Hz- On time 12μs
レーザーマスク径: 0.9 mm
ショット回数: 35回
貫通孔径W: 0.65mm
貫通孔の間隔D: 0.3mm
貫通孔の数 : 40000個/枚
得られた貫通導体の拡大写真を図7に示す。
すなわち、台座22に多孔体板21を固定し、台座22上に無塵紙23を載置し、その上にセラミック基板のサンプル24を設置した。セラミック基板24の貫通孔上に水26を滴下し、矢印Aのように吸引した。そして、無塵紙に水分の付着が見られるかどうかを確認した。
実施例1と同じセラミック基材の各貫通孔にAgペースト埋め込みを行った。使用したAgペーストは実施例と同じである。その後、750℃にて焼成を行い、貫通孔中に金属多孔体を形成した。
Claims (3)
- 第一の主面と第二の主面とを有しており、貫通孔が設けられているセラミック基材の前記貫通孔に金属ペーストを供給し、加熱によって金属多孔体を生成させる工程;
前記金属多孔体の主面にガラスペーストを塗布すると共に前記金属多孔体の開気孔中に前記ガラスペーストを含浸させる工程;
加熱によって前記ガラスペーストを硬化させることで、前記金属多孔体の前記主面上にガラス層を形成し、かつ前記開気孔に含浸した前記ガラスペーストをガラス相とする工程;および
前記ガラス層を除去することで、セラミック基板と、前記貫通孔内に設けられた貫通導体とを備える接続基板を得る工程
を有しており、前記貫通導体が、前記金属多孔体と前記ガラス相を備えることを特徴とする、接続基板の製造方法。 - 前記ガラス層を除去する工程において、研磨加工によって前記ガラス層を除去すると共に前記セラミック基板の前記第一の主面を研磨面とすることを特徴とする、請求項1記載の方法。
- 前記セラミック基板の厚さが25~150μmであり、前記貫通孔の径が20μm~70μmであることを特徴とする、請求項1または2記載の方法。
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JP2018504024A JP6918773B2 (ja) | 2016-03-11 | 2017-01-12 | 接続基板の製造方法 |
CN201780010366.9A CN108702846B (zh) | 2016-03-11 | 2017-01-12 | 连接基板的制造方法 |
KR1020187024079A KR20180121508A (ko) | 2016-03-11 | 2017-01-12 | 접속 기판의 제조 방법 |
DE112017001270.8T DE112017001270T5 (de) | 2016-03-11 | 2017-01-12 | Verfahren zur Herstellung eines Verbindungssubstrat |
US16/108,284 US11013127B2 (en) | 2016-03-11 | 2018-08-22 | Method for producing connection substrate |
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US20180359865A1 (en) | 2018-12-13 |
CN108702846A (zh) | 2018-10-23 |
US11013127B2 (en) | 2021-05-18 |
TWI710299B (zh) | 2020-11-11 |
CN108702846B (zh) | 2021-05-18 |
KR20180121508A (ko) | 2018-11-07 |
DE112017001270T5 (de) | 2018-11-29 |
TW201803426A (zh) | 2018-01-16 |
JPWO2017154339A1 (ja) | 2019-01-17 |
JP6918773B2 (ja) | 2021-08-11 |
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