WO2017135518A1 - Appareil d'alignement de tranche et appareil de transfert de tranche - Google Patents

Appareil d'alignement de tranche et appareil de transfert de tranche Download PDF

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Publication number
WO2017135518A1
WO2017135518A1 PCT/KR2016/004575 KR2016004575W WO2017135518A1 WO 2017135518 A1 WO2017135518 A1 WO 2017135518A1 KR 2016004575 W KR2016004575 W KR 2016004575W WO 2017135518 A1 WO2017135518 A1 WO 2017135518A1
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WO
WIPO (PCT)
Prior art keywords
wafer
disposed
vacuum
chuck
alignment device
Prior art date
Application number
PCT/KR2016/004575
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English (en)
Korean (ko)
Inventor
조용철
안홍배
김승구
Original Assignee
주식회사 이오테크닉스
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Publication of WO2017135518A1 publication Critical patent/WO2017135518A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the present invention relates to a wafer alignment device and a wafer transfer device for transferring wafers to the wafer alignment device.
  • the wafer alignment device is an alignment device for detecting the center of the wafer by detecting the notch of the wafer and aligning the notch to the correct position while calculating the circumference of the wafer.
  • a separate transfer means for mounting the wafer and a separate seating portion may be mounted on the rotating means for rotating the wafer to detect the notch of the wafer and align the wafer.
  • Wafers that are transported and seated in the wafer alignment device can be easily broken or scratched, so handle them as carefully as possible to avoid damaging the wafers.
  • the thickness of the wafer becomes thinner, there is a problem that damage occurs to the wafer when the wafer is transferred to the alignment device and when the wafer is seated on the rotating means.
  • the rotating means rotates the wafer, there is a fatal problem that a wafer slip occurs and a damage of the wafer occurs in a semiconductor process or the like requiring precise work.
  • a wafer alignment device and a wafer transfer device capable of safely transporting and seating a wafer in a thin film form.
  • a wafer alignment device capable of preventing slip caused when a thin film type wafer is supported and rotated by a rotating device.
  • a wafer alignment device includes a housing; A wafer chuck disposed on the housing and supporting a wafer having a different thickness from a central portion and a peripheral portion; And a rotating device for rotating the wafer chuck about one axis, wherein a plurality of concentric vacuum lines may be disposed on one surface of the wafer chuck.
  • the plurality of vacuum lines may be arranged to be spaced apart from each other with a predetermined interval therebetween along a radial direction of the wafer chuck with a predetermined interval therebetween.
  • the plurality of vacuum lines may be disposed to face the center of the wafer to support the wafer on the wafer chuck.
  • the plurality of vacuum lines may apply the same vacuum pressure to the center of the wafer, respectively.
  • a moving device for moving the wafer chuck along one direction may further include a.
  • It may further include a seating portion for supporting the peripheral portion of the wafer.
  • the seating part includes first and second support parts extending to have a predetermined angle along the circumferential direction of the wafer chuck, wherein the first and second support parts have a predetermined distance between the wafer chucks. It may be arranged to be spaced apart from each other.
  • the first support part may have first-first and second-second support surfaces having different heights
  • the second support part may have second-first and second-second support surfaces having different heights
  • the first stepped portion Disposed between the first-first and first-second support surfaces, the first stepped portion having a curved shape, and disposed between the second-first and second-second support surfaces, and It may include a second step of the curved shape having a curvature of.
  • the apparatus may further include a detection sensor for detecting an alignment state of the wafer.
  • a wafer transfer device includes a body for supporting a wafer having a different thickness from a center portion and a peripheral portion thereof; And a vacuum hole formed on the body and generating a vacuum pressure to adsorb the periphery of the wafer.
  • It may further include a first branch extending from the body and a second branch extending from the body.
  • the vacuum hole includes a first vacuum hole formed on the body, a second vacuum hole formed on the first branch, and a third vacuum hole formed on the second branch, wherein the body, the first branch, and the The second branch forms a Y shape, and the first to third vacuum holes may be arranged in a triangular shape.
  • Each of the first to third vacuum holes may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
  • a wafer transfer device in one embodiment, includes a plate-shaped base portion for supporting a wafer having a different thickness from a central portion and a peripheral portion; A first guide wall and a second guide wall formed to have a step with the base part and disposed to be spaced apart from each other on the base part; And a contact pad part supporting a peripheral portion of the wafer.
  • the contact pad part may include first to third contact pads formed on the base part, and the first to third contact pads may be disposed in a triangular shape.
  • Each of the first to third contact pads may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
  • the wafer in the form of a thin film can be transported and seated without any damage to the wafer alignment device.
  • the wafer aligning device when the wafer in the form of a thin film is rotated by the wafer aligning device, the wafer may be prevented from being damaged by supporting the wafer without a separate slip phenomenon.
  • FIG. 1A is a perspective view illustrating a wafer alignment apparatus according to an embodiment of the present invention.
  • FIG. 1B is a schematic diagram schematically showing a configuration of a wafer alignment apparatus according to an embodiment of the present invention.
  • FIG. 2A is a perspective view of a wafer in accordance with one embodiment of the present invention.
  • FIG. 2B is a cross-sectional view of the wafer illustrated in FIG. 2A taken along the line O ′.
  • Figure 3a is a perspective view of the seating portion according to an embodiment of the present invention.
  • FIG. 3B is a cross-sectional view of the mounting portion cut along the line AA ′ of the mounting portion illustrated in FIG. 3A.
  • FIG. 4A is a perspective view of a wafer chuck in accordance with one embodiment of the present invention.
  • FIG. 4B is a top view of the wafer chuck shown in FIG. 4A.
  • FIG. 5 is a perspective view of a wafer transfer apparatus according to an embodiment of the present invention.
  • FIG. 6 is a plan view of a wafer transfer apparatus according to an embodiment of the present invention.
  • FIG. 7 is a perspective view of a wafer transfer apparatus according to another embodiment of the present invention.
  • FIG. 8 is a plan view of a wafer transfer apparatus according to another embodiment of the present invention.
  • ... unit means a unit for processing at least one function or operation, which is implemented in hardware or software or a combination of hardware and software. Can be.
  • 1A is a perspective view illustrating a wafer alignment apparatus according to an embodiment of the present invention.
  • 1B is a schematic diagram schematically showing a configuration of a wafer alignment apparatus according to an embodiment of the present invention.
  • 2A is a perspective view of a wafer in accordance with one embodiment of the present invention.
  • FIG. 2B is a cross-sectional view of the wafer illustrated in FIG. 2A taken along the line O ′.
  • the wafer alignment apparatus 1 according to an embodiment of the present invention, the wafer chuck 210 disposed on the housing 100, the wafer chuck 210 in the first direction (X)
  • the driving unit 220 which can be moved along and rotated about the first direction X, the seating unit 300 disposed along the circumference of the wafer chuck 210, and the predetermined height of the upper end of the upper surface of the housing 100. It may include a detection sensor 400 and the control unit 600 is disposed.
  • the wafer W according to an embodiment of the present invention may be formed in a thin film form.
  • the wafer W may be formed in a disc shape.
  • the wafer W may be a Taiko wafer having a different thickness between the center portion O and the peripheral portion P.
  • FIG. For example, when the thin film wafer W is formed of a tyco wafer, the thickness t 1 of the central portion O may be 50 ⁇ m, and the thickness t 2 of the peripheral portion P may be 700 ⁇ m.
  • the width r of the peripheral portion P in the radial direction may be 1 mm.
  • the present invention is not limited thereto, and the wafer alignment device and the wafer transfer device according to an embodiment of the present invention may be used for the wafer W having a relatively thick thickness as well as a thin film.
  • the wafer chuck 210 is a support member that can support the wafer (W).
  • the wafer chuck 210 may have a disc shape having an external dimension equal to or supported by the wafer W supported by the wafer chuck.
  • the wafer W may be formed as a thin film-shaped disk, and the wafer chuck 210 may be formed to be one dimension smaller or the same as the thin film-shaped wafer W.
  • the present invention is not limited thereto, and the shape, dimensions, and the like of the wafer chuck 210 may be set according to the shape, dimensions, and the like of the wafer W to be supported.
  • One surface 211 of the wafer chuck 210 disposed to face the wafer W may be a wafer support surface.
  • the wafer chuck 210 when the wafer chuck 210 is formed of a vacuum chuck, one surface of the wafer chuck 210 may be formed.
  • the wafer W can be fixed by sucking air from the vacuum line 270 disposed at 211 to generate a suction force.
  • the driving unit 220 is a moving device for moving the wafer chuck 210, and may include a first driving motor 221 capable of generating a driving force along the first direction X.
  • the driving unit 220 is a rotation device for rotating the wafer chuck 210 about the first direction X, and a second driving motor capable of generating a rotational force that rotates about the first direction X. 222.
  • the wafer chuck 210 may include a moving rod 223 extending along the first direction X and disposed on the other surface 212 of the wafer chuck 210.
  • the moving rod 223 moves along the first direction X by receiving power from the first driving motor 221
  • the wafer chuck 210 also wafers along the first direction X.
  • FIG. It can be moved toward (W), so that the wafer chuck 210 can support the wafer (W).
  • the wafer chuck 210 when power is transmitted from the second driving motor 222 to the moving rod 223, the wafer chuck 210 may be rotated about the first direction X, and the wafer chuck 210 may be rotated. ) May be rotated about the first axis (X).
  • the second driving motor 222 may be a direct drive motor that can transfer power to the wafer chuck 210, but the present invention is not limited thereto.
  • the wafer chuck 210 when the wafer chuck 210 is rotated to detect the notch formed on the wafer W, the wafer W may slide due to centrifugal force even though the semiconductor process requires very precise work.
  • a method of supporting the wafer W using the vacuum line 270 provided in the wafer chuck 210 to prevent slippage of the wafer W will be described below in more detail with reference to FIGS. 4A and 4B.
  • the seating part 300 is a support member capable of supporting the wafer (W).
  • the seating part 300 may be formed to extend along the circumferential direction of the wafer chuck 210 and may be disposed to support the peripheral portion P of the wafer W.
  • the seating part 300 may include a stepped part 320 capable of supporting the peripheral portion P of the wafer W when the wafer W is accidentally seated on the seating part 300. Matters related to the stepped portion 320 that may prevent damage to the wafer W during the transfer of the wafer W will be described in more detail later with reference to FIGS. 3A and 3B.
  • the detection sensor 400 is disposed to face the one surface 211 of the wafer chuck 210, and detects the notch and the center point of the wafer W that rotates according to the rotation of the wafer chuck 210.
  • the detection sensor 400 may be a vision camera, and when the detection sensor 400 is provided as a vision camera, the detection sensor 400 photographs the notch and the center point provided on the wafer W, and notches and the center point. Can recognize the location of.
  • the controller 600 may apply a control signal to the driver 220 according to the alignment state of the wafer W detected by the detection sensor 400 to match the alignment of the wafer W.
  • FIG. As an example, when the wafer W is fixed in a state in which the center of the wafer chuck is not aligned with the wafer chuck 210, that is, unaligned, and the wafer chuck 210 is rotationally driven by the driver 220, the detection is performed.
  • the sensor 400 may detect a flat zone or a notch of the wafer W rotating in an eccentric state, and transmit the same to the controller 600.
  • control unit 600 can determine the difference between the center of the actual wafer (W) and the center of the wafer chuck 210 by the above-described detection sensor 400, the rotation device, for example, the second drive motor ( The center of the wafer W may be aligned by applying a control signal to the 222 to rotate the wafer chuck 210.
  • the wafer chuck 210 in which the thin film-shaped wafer W is transferred to the wafer alignment device 1 before the wafer W is rotated for alignment of the wafer W so that the wafer W is seated and supported.
  • the mounting portion 300 will be described in more detail.
  • Figure 3a is a perspective view of the seating portion according to an embodiment of the present invention.
  • 3B is a cross-sectional view of the mounting portion cut along the line AA ′ of the mounting portion illustrated in FIG. 3A.
  • the seating part 300 may include first and second parts that surround a portion of the wayuck chuck 210 along the circumferential direction of the wafer chuck 210.
  • Supports 311 and 312 may be included.
  • the first and second supports 311 and 312 may extend to have a predetermined angle ⁇ along the circumferential direction of the wayuck chuck 210.
  • the first and second support parts 311 may be disposed to be spaced apart from each other at a predetermined interval along the circumferential direction of the wafer chuck 210, and the first and second support parts 311 may be disposed on the wafer.
  • the chuck 210 may be disposed to face each other with the chuck 210 therebetween.
  • the first and second support portions 311 and 312 may include the first-first and second-first support surfaces 3111 and 3121 on which the wafer W, more specifically, the peripheral portion P of the wafer W may be supported. And the first-second and second-second support surfaces 3112 and 3122 disposed to have predetermined steps with the first-first and second-first support surfaces 3111 and 3121. First and second stepped portions between the first-first support surface 3111 and the first-second support surface 3112 and between the second-first support surface 3121 and the second-second support surface 3122 ( 321 and 322 may be disposed respectively.
  • the first-first and second-first support surfaces 3111 and 3121 may extend the radial direction of the wafer chuck 210 so that one surface of the wafer W, more specifically, the peripheral portion P of the wafer W may be supported. Can be extended accordingly.
  • the wafer W when the wafer W is transferred to the wafer alignment device 1, the wafer W may be supported by the first-first and second-first support surfaces 3111 and 3121, where the wafer
  • the width D 1 of the first-first and second-first support surfaces 3111 and 3121 in the radial direction of the chuck 210 may be 1 mm or less.
  • the present invention is not limited thereto, and the width D 1 of the first-first and second-first support surfaces 3111 and 3121 may be different depending on the width in the radial direction of the peripheral portion P of the wafer W. Can be determined.
  • the 1-2-2 and the 2-2 support surfaces 3112 and 3122 are disposed to form a step with the 1-1 and 2-1 support surfaces 3111 and 3121, and support the 1-1 and 2-1 support. It may be arranged to be closer to the wafer chuck 210 than the surfaces 3111 and 3121, that is, the first-first and second-first support surfaces 3111 and 3121.
  • the first and second support surfaces 3112 and 3122 support the wafers 1-1 and 2-1 in the process of transferring the wafer W to the wafer alignment device 1 and seating the wafers W.
  • FIG. It is a supporting member for preparing the case where it is not seated on the surfaces 3111 and 3121 correctly.
  • the width D 2 of the first and second support surfaces 3112 and 3122 in the radial direction of the wafer chuck 210 may also be 1 mm or less.
  • the present invention is not limited thereto, and the width D 2 of the first-second and second-second support surfaces 3112 and 3122 also depends on the width in the radial direction of the peripheral portion P of the wafer W. Can be determined differently.
  • the first and second stepped portions 321 and 322 are provided between the first-first support surface 3111 and the first-second support surface 3112 and the second-first support surface 3121 and the second-second support surface.
  • the wafers W are disposed between the first and second support surfaces 3112 and 2121 or 3-2 from the first-first support surface 3111 or the second-first support surface 3121. ), It is a guide member capable of guiding the movement path of the wafer (W).
  • the first stepped portion 321 may be formed in a curved shape having a predetermined curvature between the first-first support surface 3111 and the first-second support surface 3112.
  • the curved portion of the side portion of the wafer W provided in the first stepped portion 321 is provided.
  • the impact that may be applied to the wafer W may be minimized when falling from the first-first support surface 3111 to the first-second support surface 3112.
  • the second stepped portion 322 formed between the second-first support surface 3121 and the second-second support surface 3122 also has substantially the same technical features as the first stepped portion 321, for convenience of description, The description is omitted here.
  • 4A is a perspective view of a wafer chuck in accordance with one embodiment of the present invention.
  • 4B is a top view of the wafer chuck shown in FIG. 4A.
  • a wafer W may be supported on one surface 211 of the wafer chuck 210, and a plurality of vacuum lines 270 are provided on one surface 211 of the wafer chuck 210.
  • the first to fourth vacuum lines 271-274 having a concentric shape with respect to the center of the wafer chuck 210 may be disposed on one surface 211 of the wayuck chuck 210.
  • the first to fourth vacuum lines 271-274 may be arranged to be spaced apart from each other at equal intervals, for example, at equal intervals along the radial direction of the wafer chuck 210. The air pressure in each of the vacuum lines 271-274 can be maintained the same.
  • the first to fourth vacuum lines 271-274 may be in a vacuum state. Accordingly, the space between the one surface 211 of the wafer chuck 210 and the wafer W may also be in a vacuum state, and the wafer W may be sucked and fixed to the one surface 211 of the wafer chuck 210.
  • a significantly large vacuum pressure may be used for suction fixing the wafer W.
  • the present invention is not limited thereto, and the number of vacuum lines 270, the spaced intervals, and the vacuum pressure applied from the vacuum line 270 to the wafer W may be changed according to the type of the wafer W. FIG. .
  • a relatively large vacuum pressure is applied to a narrow area of the center portion O of the wafer W, whereby the wafer W is warped (warpage). ) May be generated.
  • a plurality of vacuum lines 270 for example, first to fourth vacuum lines 271-274, are disposed on the wafer chuck 210 so that the wafers may be separated from one vacuum line.
  • the vacuum pressure applied to W) can be divided into four lines and applied to the wafer W. Accordingly, the wafer W in a thin film form without warpage can be applied to the wafer W formed in the thin film form. May be vacuum compressed onto one surface 211 of the wafer chuck 210.
  • FIG. 5 is a perspective view of a wafer transfer apparatus according to an embodiment of the present invention.
  • 6 is a plan view of a wafer transfer apparatus according to an embodiment of the present invention.
  • the wafer transport apparatus 800 extends from the body 810, the first branch 820 extending from the body 810, and the body 810. It may have a Y-shape including a second branch (820).
  • the body 810, the first branch 820, and the second branch 830 may include a material for preventing static electricity from occurring on the wafer W.
  • the body 810, the first branch 820, and the second branch 830 may include a metal oxide having a relatively low electrical insulation resistance.
  • it may include titanium dioxide having an electrical insulation resistance close to 1 ohm.
  • the surfaces of the body 810, the first branch 820, and the second branch 830 may be coated with titanium dioxide.
  • the body 810, the first branch 820, and the second branch 830 may include a ceramic material including aluminum.
  • the wafer transfer apparatus 800 may include first to third vacuum holes 841-843.
  • the first to third vacuum holes 841 to 843 may generate a vacuum pressure to vacuum suck the wafer W during the transfer.
  • the first to third vacuum holes 841-843 may be disposed at an appropriate position for transferring the wafer (W).
  • the first vacuum hole 841 is disposed on the body 810
  • the second vacuum hole 842 is disposed on the first branch 820
  • the third vacuum hole 843 is the second. It may be disposed on the branch 830.
  • the first to third vacuum holes 841 to 843 are disposed in a triangle, so that the center of the triangle coincides with the center of the wafer W so that the wafer W is placed on the wafer transfer device 800. Can be located at
  • the wafer W is formed in a thin film form, and the thickness of the peripheral portion P is thicker than the thickness of the central portion O, for example, so that the thicknesses of the central portion O and the peripheral portion P are different.
  • the first to third vacuum holes 841 to 843 may be disposed to be in contact with the central portion O of the wafer adjacent to the peripheral portion P to suck the wafer P in vacuum.
  • the first vacuum hole 841 is the maximum of the wafer W along the radial direction of the wafer W.
  • the body 810 may be spaced apart from the outer portion with a predetermined first separation distance Z 1 .
  • the first branch 820 is spaced apart from the outermost portion of the wafer W along the radial direction of the wafer W with a predetermined second separation distance Z 2 . It can be placed on.
  • the second branch 830 may be spaced apart from the outermost portion of the wafer W along the radial direction of the wafer W with a predetermined third separation distance Z 3 . It can be placed on.
  • the width r of the peripheral portion P in the radial direction of the wafer W may be 2 mm
  • the first to third separation distances Z 1 to Z 3 may be 3 mm, but the present invention It is not limited to this.
  • the first to third vacuum holes 841 to the central portion O of the wafer W are formed.
  • the first to third vacuum holes 841-843 are disposed to correspond to the central portion O of the wafer adjacent to the peripheral portion P of the wafer W. Since the centers of the triangles formed by the first to third vacuum holes 841 to 843 are arranged to coincide with the center of the wafer W, the first to third vacuum holes 841 to 843 are substantially spaced from each other.
  • the pressure applied to the wafer by the first to third vacuum holes 841-843 may be distributed over a larger area of the wafer, and by using the first to third vacuum holes 841-843. Even when a relatively same vacuum pressure is applied, the wafer W can be transported while preventing damage to the wafer W.
  • FIG. 1 A block diagram illustrating an exemplary computing environment in accordance with the present disclosure.
  • FIG. 7 is a perspective view of a wafer transfer apparatus according to another embodiment of the present invention.
  • 8 is a plan view of a wafer transfer apparatus according to another embodiment of the present invention.
  • the wafer transfer apparatus 800 may include a base portion 850, a first guide wall 860, and a second guide wall 870.
  • the first guide wall 860 and the second guide wall 870 may be formed at a height higher than that of the base portion 850 having a plate shape, thereby preventing the wafer W from being separated.
  • the base unit 850 may include a material for preventing static electricity from occurring.
  • the base unit 850 may include a metal oxide having a relatively low electrical insulation resistance.
  • it may include titanium dioxide.
  • the surface of the base portion 850 may be coated with titanium dioxide.
  • the base portion 850 may include a ceramic material including aluminum.
  • the wafer transfer apparatus 800 may further include a plurality of contact pads 880 disposed on the base portion 850.
  • the first to third contact pads 881-883 may be disposed on the base portion 850, and the first to third contact pads 881-883 may be disposed in a triangular shape. have.
  • the first to third contact pads 881-883 have a predetermined thickness smaller than the height of the first guide wall 860 and the second guide wall 870, so that the wafer W has a base. May be spaced apart from the portion 850.
  • the first to third contact pads 881-883 may include a material having elasticity in order not to damage one surface of the wafer W.
  • the first to third contact pads 881-883 may include polyimide plastic.
  • the wafer W is formed in a thin film form, and the thickness of the peripheral portion P is thicker than the thickness of the central portion O, for example, so that the thicknesses of the central portion O and the peripheral portion P are different.
  • the first to third contact pads 881-883 may be disposed to be in contact with the peripheral portion P to vacuum-adsorb the wafer P. Since the relationship between the position of the first to third contact pads 881-883 and the peripheral portion P is substantially the same as that described in the above-described embodiment, the description is omitted here for convenience of description.
  • the first to third contact pads 881-883 are positioned at the center of the wafer adjacent to the peripheral portion P of the wafer W ( By arranging to correspond to O), even when relatively the same pressure is applied using the first to third contact pads 881-883, the wafer W can be transported while preventing damage to the wafer W.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

La présente invention concerne un appareil d'alignement de tranche destiné à aligner une tranche dont la partie centrale et la partie périphérique présentent des épaisseurs différentes, et un appareil de transfert de tranche. L'appareil d'alignement de tranche selon un mode de réalisation de la présente invention peut comprendre : un boîtier; un support de tranche qui est agencé sur la partie supérieure du boîtier et soutient une tranche dont la partie centrale et la partie périphérique présentent des épaisseurs différentes; et un appareil de rotation pour faire tourner ledit support de tranche autour d'un axe.
PCT/KR2016/004575 2016-02-05 2016-05-02 Appareil d'alignement de tranche et appareil de transfert de tranche WO2017135518A1 (fr)

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Application Number Priority Date Filing Date Title
KR1020160014654A KR101960854B1 (ko) 2016-02-05 2016-02-05 웨이퍼 정렬 장치 및 웨이퍼 이송 장치
KR10-2016-0014654 2016-02-05

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WO2017135518A1 true WO2017135518A1 (fr) 2017-08-10

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KR (1) KR101960854B1 (fr)
TW (1) TWI627699B (fr)
WO (1) WO2017135518A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107731988A (zh) * 2017-11-17 2018-02-23 江门市蓬江区精汇电子科技有限公司 一种led扩晶机
CN107731987A (zh) * 2017-11-17 2018-02-23 江门市蓬江区精汇电子科技有限公司 扩晶机
CN107749403A (zh) * 2017-11-17 2018-03-02 江门市蓬江区精汇电子科技有限公司 一种新型扩晶机
CN107833851A (zh) * 2017-11-17 2018-03-23 江门市蓬江区精汇电子科技有限公司 一种扩晶机
CN110517980A (zh) * 2019-09-25 2019-11-29 沈阳芯达半导体设备有限公司 一种半导体行业用晶圆自动传送机构
CN110828359A (zh) * 2018-08-10 2020-02-21 上海微电子装备（集团）股份有限公司 预对准装置及硅片预对准方法
TWI698961B (zh) * 2018-09-30 2020-07-11 大陸商上海微電子裝備（集團）股份有限公司 一種晶片貼片設備及晶片貼片方法
CN112051708A (zh) * 2020-09-15 2020-12-08 青岛天仁微纳科技有限责任公司 对中上料装置及纳米压印设备
CN114393468A (zh) * 2021-12-29 2022-04-26 江苏威森美微电子有限公司 一种半导体晶圆磨边加工用磨边机
CN116013819A (zh) * 2023-02-24 2023-04-25 长春光华微电子设备工程中心有限公司 一种用于taiko晶圆传输的信息标定方法

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CN107731987A (zh) * 2017-11-17 2018-02-23 江门市蓬江区精汇电子科技有限公司 扩晶机
CN107749403A (zh) * 2017-11-17 2018-03-02 江门市蓬江区精汇电子科技有限公司 一种新型扩晶机
CN107833851A (zh) * 2017-11-17 2018-03-23 江门市蓬江区精汇电子科技有限公司 一种扩晶机
CN107731988B (zh) * 2017-11-17 2024-06-04 江门市蓬江区精汇电子科技有限公司 一种led扩晶机
CN107731988A (zh) * 2017-11-17 2018-02-23 江门市蓬江区精汇电子科技有限公司 一种led扩晶机
CN110828359B (zh) * 2018-08-10 2022-02-15 上海微电子装备（集团）股份有限公司 预对准装置及硅片预对准方法
CN110828359A (zh) * 2018-08-10 2020-02-21 上海微电子装备（集团）股份有限公司 预对准装置及硅片预对准方法
TWI698961B (zh) * 2018-09-30 2020-07-11 大陸商上海微電子裝備（集團）股份有限公司 一種晶片貼片設備及晶片貼片方法
CN110517980B (zh) * 2019-09-25 2024-04-26 沈阳芯达半导体设备有限公司 一种半导体行业用晶圆自动传送机构
CN110517980A (zh) * 2019-09-25 2019-11-29 沈阳芯达半导体设备有限公司 一种半导体行业用晶圆自动传送机构
CN112051708A (zh) * 2020-09-15 2020-12-08 青岛天仁微纳科技有限责任公司 对中上料装置及纳米压印设备
CN114393468A (zh) * 2021-12-29 2022-04-26 江苏威森美微电子有限公司 一种半导体晶圆磨边加工用磨边机
CN114393468B (zh) * 2021-12-29 2023-03-10 江苏威森美微电子有限公司 一种半导体晶圆磨边加工用磨边机
CN116013819A (zh) * 2023-02-24 2023-04-25 长春光华微电子设备工程中心有限公司 一种用于taiko晶圆传输的信息标定方法
CN116013819B (zh) * 2023-02-24 2023-07-04 长春光华微电子设备工程中心有限公司 一种用于taiko晶圆传输的信息标定方法

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