WO2017135518A1 - Wafer alignment apparatus and wafer transfer apparatus - Google Patents

Wafer alignment apparatus and wafer transfer apparatus Download PDF

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Publication number
WO2017135518A1
WO2017135518A1 PCT/KR2016/004575 KR2016004575W WO2017135518A1 WO 2017135518 A1 WO2017135518 A1 WO 2017135518A1 KR 2016004575 W KR2016004575 W KR 2016004575W WO 2017135518 A1 WO2017135518 A1 WO 2017135518A1
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WO
WIPO (PCT)
Prior art keywords
wafer
disposed
vacuum
chuck
alignment device
Prior art date
Application number
PCT/KR2016/004575
Other languages
French (fr)
Korean (ko)
Inventor
조용철
안홍배
김승구
Original Assignee
주식회사 이오테크닉스
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Publication of WO2017135518A1 publication Critical patent/WO2017135518A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

Definitions

  • the present invention relates to a wafer alignment device and a wafer transfer device for transferring wafers to the wafer alignment device.
  • the wafer alignment device is an alignment device for detecting the center of the wafer by detecting the notch of the wafer and aligning the notch to the correct position while calculating the circumference of the wafer.
  • a separate transfer means for mounting the wafer and a separate seating portion may be mounted on the rotating means for rotating the wafer to detect the notch of the wafer and align the wafer.
  • Wafers that are transported and seated in the wafer alignment device can be easily broken or scratched, so handle them as carefully as possible to avoid damaging the wafers.
  • the thickness of the wafer becomes thinner, there is a problem that damage occurs to the wafer when the wafer is transferred to the alignment device and when the wafer is seated on the rotating means.
  • the rotating means rotates the wafer, there is a fatal problem that a wafer slip occurs and a damage of the wafer occurs in a semiconductor process or the like requiring precise work.
  • a wafer alignment device and a wafer transfer device capable of safely transporting and seating a wafer in a thin film form.
  • a wafer alignment device capable of preventing slip caused when a thin film type wafer is supported and rotated by a rotating device.
  • a wafer alignment device includes a housing; A wafer chuck disposed on the housing and supporting a wafer having a different thickness from a central portion and a peripheral portion; And a rotating device for rotating the wafer chuck about one axis, wherein a plurality of concentric vacuum lines may be disposed on one surface of the wafer chuck.
  • the plurality of vacuum lines may be arranged to be spaced apart from each other with a predetermined interval therebetween along a radial direction of the wafer chuck with a predetermined interval therebetween.
  • the plurality of vacuum lines may be disposed to face the center of the wafer to support the wafer on the wafer chuck.
  • the plurality of vacuum lines may apply the same vacuum pressure to the center of the wafer, respectively.
  • a moving device for moving the wafer chuck along one direction may further include a.
  • It may further include a seating portion for supporting the peripheral portion of the wafer.
  • the seating part includes first and second support parts extending to have a predetermined angle along the circumferential direction of the wafer chuck, wherein the first and second support parts have a predetermined distance between the wafer chucks. It may be arranged to be spaced apart from each other.
  • the first support part may have first-first and second-second support surfaces having different heights
  • the second support part may have second-first and second-second support surfaces having different heights
  • the first stepped portion Disposed between the first-first and first-second support surfaces, the first stepped portion having a curved shape, and disposed between the second-first and second-second support surfaces, and It may include a second step of the curved shape having a curvature of.
  • the apparatus may further include a detection sensor for detecting an alignment state of the wafer.
  • a wafer transfer device includes a body for supporting a wafer having a different thickness from a center portion and a peripheral portion thereof; And a vacuum hole formed on the body and generating a vacuum pressure to adsorb the periphery of the wafer.
  • It may further include a first branch extending from the body and a second branch extending from the body.
  • the vacuum hole includes a first vacuum hole formed on the body, a second vacuum hole formed on the first branch, and a third vacuum hole formed on the second branch, wherein the body, the first branch, and the The second branch forms a Y shape, and the first to third vacuum holes may be arranged in a triangular shape.
  • Each of the first to third vacuum holes may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
  • a wafer transfer device in one embodiment, includes a plate-shaped base portion for supporting a wafer having a different thickness from a central portion and a peripheral portion; A first guide wall and a second guide wall formed to have a step with the base part and disposed to be spaced apart from each other on the base part; And a contact pad part supporting a peripheral portion of the wafer.
  • the contact pad part may include first to third contact pads formed on the base part, and the first to third contact pads may be disposed in a triangular shape.
  • Each of the first to third contact pads may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
  • the wafer in the form of a thin film can be transported and seated without any damage to the wafer alignment device.
  • the wafer aligning device when the wafer in the form of a thin film is rotated by the wafer aligning device, the wafer may be prevented from being damaged by supporting the wafer without a separate slip phenomenon.
  • FIG. 1A is a perspective view illustrating a wafer alignment apparatus according to an embodiment of the present invention.
  • FIG. 1B is a schematic diagram schematically showing a configuration of a wafer alignment apparatus according to an embodiment of the present invention.
  • FIG. 2A is a perspective view of a wafer in accordance with one embodiment of the present invention.
  • FIG. 2B is a cross-sectional view of the wafer illustrated in FIG. 2A taken along the line O ′.
  • Figure 3a is a perspective view of the seating portion according to an embodiment of the present invention.
  • FIG. 3B is a cross-sectional view of the mounting portion cut along the line AA ′ of the mounting portion illustrated in FIG. 3A.
  • FIG. 4A is a perspective view of a wafer chuck in accordance with one embodiment of the present invention.
  • FIG. 4B is a top view of the wafer chuck shown in FIG. 4A.
  • FIG. 5 is a perspective view of a wafer transfer apparatus according to an embodiment of the present invention.
  • FIG. 6 is a plan view of a wafer transfer apparatus according to an embodiment of the present invention.
  • FIG. 7 is a perspective view of a wafer transfer apparatus according to another embodiment of the present invention.
  • FIG. 8 is a plan view of a wafer transfer apparatus according to another embodiment of the present invention.
  • ... unit means a unit for processing at least one function or operation, which is implemented in hardware or software or a combination of hardware and software. Can be.
  • 1A is a perspective view illustrating a wafer alignment apparatus according to an embodiment of the present invention.
  • 1B is a schematic diagram schematically showing a configuration of a wafer alignment apparatus according to an embodiment of the present invention.
  • 2A is a perspective view of a wafer in accordance with one embodiment of the present invention.
  • FIG. 2B is a cross-sectional view of the wafer illustrated in FIG. 2A taken along the line O ′.
  • the wafer alignment apparatus 1 according to an embodiment of the present invention, the wafer chuck 210 disposed on the housing 100, the wafer chuck 210 in the first direction (X)
  • the driving unit 220 which can be moved along and rotated about the first direction X, the seating unit 300 disposed along the circumference of the wafer chuck 210, and the predetermined height of the upper end of the upper surface of the housing 100. It may include a detection sensor 400 and the control unit 600 is disposed.
  • the wafer W according to an embodiment of the present invention may be formed in a thin film form.
  • the wafer W may be formed in a disc shape.
  • the wafer W may be a Taiko wafer having a different thickness between the center portion O and the peripheral portion P.
  • FIG. For example, when the thin film wafer W is formed of a tyco wafer, the thickness t 1 of the central portion O may be 50 ⁇ m, and the thickness t 2 of the peripheral portion P may be 700 ⁇ m.
  • the width r of the peripheral portion P in the radial direction may be 1 mm.
  • the present invention is not limited thereto, and the wafer alignment device and the wafer transfer device according to an embodiment of the present invention may be used for the wafer W having a relatively thick thickness as well as a thin film.
  • the wafer chuck 210 is a support member that can support the wafer (W).
  • the wafer chuck 210 may have a disc shape having an external dimension equal to or supported by the wafer W supported by the wafer chuck.
  • the wafer W may be formed as a thin film-shaped disk, and the wafer chuck 210 may be formed to be one dimension smaller or the same as the thin film-shaped wafer W.
  • the present invention is not limited thereto, and the shape, dimensions, and the like of the wafer chuck 210 may be set according to the shape, dimensions, and the like of the wafer W to be supported.
  • One surface 211 of the wafer chuck 210 disposed to face the wafer W may be a wafer support surface.
  • the wafer chuck 210 when the wafer chuck 210 is formed of a vacuum chuck, one surface of the wafer chuck 210 may be formed.
  • the wafer W can be fixed by sucking air from the vacuum line 270 disposed at 211 to generate a suction force.
  • the driving unit 220 is a moving device for moving the wafer chuck 210, and may include a first driving motor 221 capable of generating a driving force along the first direction X.
  • the driving unit 220 is a rotation device for rotating the wafer chuck 210 about the first direction X, and a second driving motor capable of generating a rotational force that rotates about the first direction X. 222.
  • the wafer chuck 210 may include a moving rod 223 extending along the first direction X and disposed on the other surface 212 of the wafer chuck 210.
  • the moving rod 223 moves along the first direction X by receiving power from the first driving motor 221
  • the wafer chuck 210 also wafers along the first direction X.
  • FIG. It can be moved toward (W), so that the wafer chuck 210 can support the wafer (W).
  • the wafer chuck 210 when power is transmitted from the second driving motor 222 to the moving rod 223, the wafer chuck 210 may be rotated about the first direction X, and the wafer chuck 210 may be rotated. ) May be rotated about the first axis (X).
  • the second driving motor 222 may be a direct drive motor that can transfer power to the wafer chuck 210, but the present invention is not limited thereto.
  • the wafer chuck 210 when the wafer chuck 210 is rotated to detect the notch formed on the wafer W, the wafer W may slide due to centrifugal force even though the semiconductor process requires very precise work.
  • a method of supporting the wafer W using the vacuum line 270 provided in the wafer chuck 210 to prevent slippage of the wafer W will be described below in more detail with reference to FIGS. 4A and 4B.
  • the seating part 300 is a support member capable of supporting the wafer (W).
  • the seating part 300 may be formed to extend along the circumferential direction of the wafer chuck 210 and may be disposed to support the peripheral portion P of the wafer W.
  • the seating part 300 may include a stepped part 320 capable of supporting the peripheral portion P of the wafer W when the wafer W is accidentally seated on the seating part 300. Matters related to the stepped portion 320 that may prevent damage to the wafer W during the transfer of the wafer W will be described in more detail later with reference to FIGS. 3A and 3B.
  • the detection sensor 400 is disposed to face the one surface 211 of the wafer chuck 210, and detects the notch and the center point of the wafer W that rotates according to the rotation of the wafer chuck 210.
  • the detection sensor 400 may be a vision camera, and when the detection sensor 400 is provided as a vision camera, the detection sensor 400 photographs the notch and the center point provided on the wafer W, and notches and the center point. Can recognize the location of.
  • the controller 600 may apply a control signal to the driver 220 according to the alignment state of the wafer W detected by the detection sensor 400 to match the alignment of the wafer W.
  • FIG. As an example, when the wafer W is fixed in a state in which the center of the wafer chuck is not aligned with the wafer chuck 210, that is, unaligned, and the wafer chuck 210 is rotationally driven by the driver 220, the detection is performed.
  • the sensor 400 may detect a flat zone or a notch of the wafer W rotating in an eccentric state, and transmit the same to the controller 600.
  • control unit 600 can determine the difference between the center of the actual wafer (W) and the center of the wafer chuck 210 by the above-described detection sensor 400, the rotation device, for example, the second drive motor ( The center of the wafer W may be aligned by applying a control signal to the 222 to rotate the wafer chuck 210.
  • the wafer chuck 210 in which the thin film-shaped wafer W is transferred to the wafer alignment device 1 before the wafer W is rotated for alignment of the wafer W so that the wafer W is seated and supported.
  • the mounting portion 300 will be described in more detail.
  • Figure 3a is a perspective view of the seating portion according to an embodiment of the present invention.
  • 3B is a cross-sectional view of the mounting portion cut along the line AA ′ of the mounting portion illustrated in FIG. 3A.
  • the seating part 300 may include first and second parts that surround a portion of the wayuck chuck 210 along the circumferential direction of the wafer chuck 210.
  • Supports 311 and 312 may be included.
  • the first and second supports 311 and 312 may extend to have a predetermined angle ⁇ along the circumferential direction of the wayuck chuck 210.
  • the first and second support parts 311 may be disposed to be spaced apart from each other at a predetermined interval along the circumferential direction of the wafer chuck 210, and the first and second support parts 311 may be disposed on the wafer.
  • the chuck 210 may be disposed to face each other with the chuck 210 therebetween.
  • the first and second support portions 311 and 312 may include the first-first and second-first support surfaces 3111 and 3121 on which the wafer W, more specifically, the peripheral portion P of the wafer W may be supported. And the first-second and second-second support surfaces 3112 and 3122 disposed to have predetermined steps with the first-first and second-first support surfaces 3111 and 3121. First and second stepped portions between the first-first support surface 3111 and the first-second support surface 3112 and between the second-first support surface 3121 and the second-second support surface 3122 ( 321 and 322 may be disposed respectively.
  • the first-first and second-first support surfaces 3111 and 3121 may extend the radial direction of the wafer chuck 210 so that one surface of the wafer W, more specifically, the peripheral portion P of the wafer W may be supported. Can be extended accordingly.
  • the wafer W when the wafer W is transferred to the wafer alignment device 1, the wafer W may be supported by the first-first and second-first support surfaces 3111 and 3121, where the wafer
  • the width D 1 of the first-first and second-first support surfaces 3111 and 3121 in the radial direction of the chuck 210 may be 1 mm or less.
  • the present invention is not limited thereto, and the width D 1 of the first-first and second-first support surfaces 3111 and 3121 may be different depending on the width in the radial direction of the peripheral portion P of the wafer W. Can be determined.
  • the 1-2-2 and the 2-2 support surfaces 3112 and 3122 are disposed to form a step with the 1-1 and 2-1 support surfaces 3111 and 3121, and support the 1-1 and 2-1 support. It may be arranged to be closer to the wafer chuck 210 than the surfaces 3111 and 3121, that is, the first-first and second-first support surfaces 3111 and 3121.
  • the first and second support surfaces 3112 and 3122 support the wafers 1-1 and 2-1 in the process of transferring the wafer W to the wafer alignment device 1 and seating the wafers W.
  • FIG. It is a supporting member for preparing the case where it is not seated on the surfaces 3111 and 3121 correctly.
  • the width D 2 of the first and second support surfaces 3112 and 3122 in the radial direction of the wafer chuck 210 may also be 1 mm or less.
  • the present invention is not limited thereto, and the width D 2 of the first-second and second-second support surfaces 3112 and 3122 also depends on the width in the radial direction of the peripheral portion P of the wafer W. Can be determined differently.
  • the first and second stepped portions 321 and 322 are provided between the first-first support surface 3111 and the first-second support surface 3112 and the second-first support surface 3121 and the second-second support surface.
  • the wafers W are disposed between the first and second support surfaces 3112 and 2121 or 3-2 from the first-first support surface 3111 or the second-first support surface 3121. ), It is a guide member capable of guiding the movement path of the wafer (W).
  • the first stepped portion 321 may be formed in a curved shape having a predetermined curvature between the first-first support surface 3111 and the first-second support surface 3112.
  • the curved portion of the side portion of the wafer W provided in the first stepped portion 321 is provided.
  • the impact that may be applied to the wafer W may be minimized when falling from the first-first support surface 3111 to the first-second support surface 3112.
  • the second stepped portion 322 formed between the second-first support surface 3121 and the second-second support surface 3122 also has substantially the same technical features as the first stepped portion 321, for convenience of description, The description is omitted here.
  • 4A is a perspective view of a wafer chuck in accordance with one embodiment of the present invention.
  • 4B is a top view of the wafer chuck shown in FIG. 4A.
  • a wafer W may be supported on one surface 211 of the wafer chuck 210, and a plurality of vacuum lines 270 are provided on one surface 211 of the wafer chuck 210.
  • the first to fourth vacuum lines 271-274 having a concentric shape with respect to the center of the wafer chuck 210 may be disposed on one surface 211 of the wayuck chuck 210.
  • the first to fourth vacuum lines 271-274 may be arranged to be spaced apart from each other at equal intervals, for example, at equal intervals along the radial direction of the wafer chuck 210. The air pressure in each of the vacuum lines 271-274 can be maintained the same.
  • the first to fourth vacuum lines 271-274 may be in a vacuum state. Accordingly, the space between the one surface 211 of the wafer chuck 210 and the wafer W may also be in a vacuum state, and the wafer W may be sucked and fixed to the one surface 211 of the wafer chuck 210.
  • a significantly large vacuum pressure may be used for suction fixing the wafer W.
  • the present invention is not limited thereto, and the number of vacuum lines 270, the spaced intervals, and the vacuum pressure applied from the vacuum line 270 to the wafer W may be changed according to the type of the wafer W. FIG. .
  • a relatively large vacuum pressure is applied to a narrow area of the center portion O of the wafer W, whereby the wafer W is warped (warpage). ) May be generated.
  • a plurality of vacuum lines 270 for example, first to fourth vacuum lines 271-274, are disposed on the wafer chuck 210 so that the wafers may be separated from one vacuum line.
  • the vacuum pressure applied to W) can be divided into four lines and applied to the wafer W. Accordingly, the wafer W in a thin film form without warpage can be applied to the wafer W formed in the thin film form. May be vacuum compressed onto one surface 211 of the wafer chuck 210.
  • FIG. 5 is a perspective view of a wafer transfer apparatus according to an embodiment of the present invention.
  • 6 is a plan view of a wafer transfer apparatus according to an embodiment of the present invention.
  • the wafer transport apparatus 800 extends from the body 810, the first branch 820 extending from the body 810, and the body 810. It may have a Y-shape including a second branch (820).
  • the body 810, the first branch 820, and the second branch 830 may include a material for preventing static electricity from occurring on the wafer W.
  • the body 810, the first branch 820, and the second branch 830 may include a metal oxide having a relatively low electrical insulation resistance.
  • it may include titanium dioxide having an electrical insulation resistance close to 1 ohm.
  • the surfaces of the body 810, the first branch 820, and the second branch 830 may be coated with titanium dioxide.
  • the body 810, the first branch 820, and the second branch 830 may include a ceramic material including aluminum.
  • the wafer transfer apparatus 800 may include first to third vacuum holes 841-843.
  • the first to third vacuum holes 841 to 843 may generate a vacuum pressure to vacuum suck the wafer W during the transfer.
  • the first to third vacuum holes 841-843 may be disposed at an appropriate position for transferring the wafer (W).
  • the first vacuum hole 841 is disposed on the body 810
  • the second vacuum hole 842 is disposed on the first branch 820
  • the third vacuum hole 843 is the second. It may be disposed on the branch 830.
  • the first to third vacuum holes 841 to 843 are disposed in a triangle, so that the center of the triangle coincides with the center of the wafer W so that the wafer W is placed on the wafer transfer device 800. Can be located at
  • the wafer W is formed in a thin film form, and the thickness of the peripheral portion P is thicker than the thickness of the central portion O, for example, so that the thicknesses of the central portion O and the peripheral portion P are different.
  • the first to third vacuum holes 841 to 843 may be disposed to be in contact with the central portion O of the wafer adjacent to the peripheral portion P to suck the wafer P in vacuum.
  • the first vacuum hole 841 is the maximum of the wafer W along the radial direction of the wafer W.
  • the body 810 may be spaced apart from the outer portion with a predetermined first separation distance Z 1 .
  • the first branch 820 is spaced apart from the outermost portion of the wafer W along the radial direction of the wafer W with a predetermined second separation distance Z 2 . It can be placed on.
  • the second branch 830 may be spaced apart from the outermost portion of the wafer W along the radial direction of the wafer W with a predetermined third separation distance Z 3 . It can be placed on.
  • the width r of the peripheral portion P in the radial direction of the wafer W may be 2 mm
  • the first to third separation distances Z 1 to Z 3 may be 3 mm, but the present invention It is not limited to this.
  • the first to third vacuum holes 841 to the central portion O of the wafer W are formed.
  • the first to third vacuum holes 841-843 are disposed to correspond to the central portion O of the wafer adjacent to the peripheral portion P of the wafer W. Since the centers of the triangles formed by the first to third vacuum holes 841 to 843 are arranged to coincide with the center of the wafer W, the first to third vacuum holes 841 to 843 are substantially spaced from each other.
  • the pressure applied to the wafer by the first to third vacuum holes 841-843 may be distributed over a larger area of the wafer, and by using the first to third vacuum holes 841-843. Even when a relatively same vacuum pressure is applied, the wafer W can be transported while preventing damage to the wafer W.
  • FIG. 1 A block diagram illustrating an exemplary computing environment in accordance with the present disclosure.
  • FIG. 7 is a perspective view of a wafer transfer apparatus according to another embodiment of the present invention.
  • 8 is a plan view of a wafer transfer apparatus according to another embodiment of the present invention.
  • the wafer transfer apparatus 800 may include a base portion 850, a first guide wall 860, and a second guide wall 870.
  • the first guide wall 860 and the second guide wall 870 may be formed at a height higher than that of the base portion 850 having a plate shape, thereby preventing the wafer W from being separated.
  • the base unit 850 may include a material for preventing static electricity from occurring.
  • the base unit 850 may include a metal oxide having a relatively low electrical insulation resistance.
  • it may include titanium dioxide.
  • the surface of the base portion 850 may be coated with titanium dioxide.
  • the base portion 850 may include a ceramic material including aluminum.
  • the wafer transfer apparatus 800 may further include a plurality of contact pads 880 disposed on the base portion 850.
  • the first to third contact pads 881-883 may be disposed on the base portion 850, and the first to third contact pads 881-883 may be disposed in a triangular shape. have.
  • the first to third contact pads 881-883 have a predetermined thickness smaller than the height of the first guide wall 860 and the second guide wall 870, so that the wafer W has a base. May be spaced apart from the portion 850.
  • the first to third contact pads 881-883 may include a material having elasticity in order not to damage one surface of the wafer W.
  • the first to third contact pads 881-883 may include polyimide plastic.
  • the wafer W is formed in a thin film form, and the thickness of the peripheral portion P is thicker than the thickness of the central portion O, for example, so that the thicknesses of the central portion O and the peripheral portion P are different.
  • the first to third contact pads 881-883 may be disposed to be in contact with the peripheral portion P to vacuum-adsorb the wafer P. Since the relationship between the position of the first to third contact pads 881-883 and the peripheral portion P is substantially the same as that described in the above-described embodiment, the description is omitted here for convenience of description.
  • the first to third contact pads 881-883 are positioned at the center of the wafer adjacent to the peripheral portion P of the wafer W ( By arranging to correspond to O), even when relatively the same pressure is applied using the first to third contact pads 881-883, the wafer W can be transported while preventing damage to the wafer W.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

The present invention relates to a wafer alignment apparatus for aligning a wafer of which the central part and the peripheral part are different in thickness, and a wafer transfer apparatus. A wafer alignment apparatus according to one embodiment of the present application may comprise: a housing; a wafer chuck which is arranged on the upper part of the housing and supports a wafer of which the central part and the peripheral part are different in thickness; and a rotation apparatus for rotating the wafer chuck with respect to one axis.

Description

웨이퍼 정렬 장치 및 웨이퍼 이송 장치Wafer Aligner and Wafer Transporter
본 발명은 웨이퍼 정렬 장치 및 상기 웨이퍼 정렬 장치에 웨이퍼를 이송하기 위한 웨이퍼 이송 장치에 관한 것이다.The present invention relates to a wafer alignment device and a wafer transfer device for transferring wafers to the wafer alignment device.
웨이퍼 정렬 장치는 웨이퍼의 노치를 검출하여 노치를 정위치로 정렬시킴과 동시에 웨이퍼의 원주를 계산하여 웨이퍼의 중심을 검출하기 위한 정렬 장치이다. 웨이퍼의 노치를 검출하여 웨이퍼를 정렬시키기 위해 웨이퍼를 회전시키는 회전수단에 웨이퍼를 안착시키기 위한 별도의 이송 수단 및 별도의 안착부를 장착할 수 있다. 웨이퍼 정렬 장치에 이송 및 안착되는 웨이퍼는 쉽게 깨지거나 긁힐 수 있으므로 웨이퍼의 손상을 방지하기 위해서는 최대한 신중하게 취급해야 한다. 특히, 최근 사용되는 웨이퍼의 크기는 커지는 반면, 웨이퍼의 두께가 얇아짐에 따라, 웨이퍼가 정렬 장치에 이송하는 경우, 및 웨이퍼가 회전수단에 안착하는 경우 웨이퍼에 손상이 발생하는 문제가 있었으며, 또한, 회전수단이 웨이퍼를 회전시킬 때 웨이퍼의 슬립(Slip)이 발생하여 정밀한 작업이 요구되는 반도체 공정 등에 있어서 웨이퍼의 손상 등이 발생하는 치명적인 문제점이 있었다.The wafer alignment device is an alignment device for detecting the center of the wafer by detecting the notch of the wafer and aligning the notch to the correct position while calculating the circumference of the wafer. A separate transfer means for mounting the wafer and a separate seating portion may be mounted on the rotating means for rotating the wafer to detect the notch of the wafer and align the wafer. Wafers that are transported and seated in the wafer alignment device can be easily broken or scratched, so handle them as carefully as possible to avoid damaging the wafers. In particular, as the size of the recently used wafer increases, the thickness of the wafer becomes thinner, there is a problem that damage occurs to the wafer when the wafer is transferred to the alignment device and when the wafer is seated on the rotating means. When the rotating means rotates the wafer, there is a fatal problem that a wafer slip occurs and a damage of the wafer occurs in a semiconductor process or the like requiring precise work.
본 발명의 일 측면에서는, 박막 형태의 웨이퍼를 안전하게 이송 및 안착시킬 수 있는 웨이퍼 정렬 장치 및 웨이퍼 이송 장치를 제공한다.In one aspect of the present invention, there is provided a wafer alignment device and a wafer transfer device capable of safely transporting and seating a wafer in a thin film form.
본 발명의 다른 측면에서는, 박막 형태의 웨이퍼가 회전 장치에 지지되어 회전하는 경우 발생되는 슬립을 방지할 수 있는 웨이퍼 정렬 장치를 제공한다.In another aspect of the present invention, there is provided a wafer alignment device capable of preventing slip caused when a thin film type wafer is supported and rotated by a rotating device.
일 실시예에 따른 웨이퍼 정렬 장치는 하우징; 상기 하우징의 상부에 배치되고, 중심부와 주변부의 두께가 상이한 웨이퍼를 지지하는 웨이퍼 척; 및 상기 웨이퍼 척을 일 축을 중심으로 회전시키는 회전 장치;를 포함할 수 있으며, 상기 웨이퍼 척의 일면에 동심원 형상의 복수 개의 진공 라인이 배치될 수 있다.In one embodiment, a wafer alignment device includes a housing; A wafer chuck disposed on the housing and supporting a wafer having a different thickness from a central portion and a peripheral portion; And a rotating device for rotating the wafer chuck about one axis, wherein a plurality of concentric vacuum lines may be disposed on one surface of the wafer chuck.
상기 복수 개의 진공 라인은 소정의 간격을 사이에 두고 상기 웨이퍼 척의 직경 방향을 따라 소정의 간격을 사이에 두고 서로 이격되도록 배치될 수 있다.The plurality of vacuum lines may be arranged to be spaced apart from each other with a predetermined interval therebetween along a radial direction of the wafer chuck with a predetermined interval therebetween.
상기 복수 개의 진공 라인은 상기 웨이퍼의 중심부와 마주보도록 배치되어 상기 웨이퍼 척에 상기 웨이퍼를 지지시킬 수 있다.The plurality of vacuum lines may be disposed to face the center of the wafer to support the wafer on the wafer chuck.
상기 복수 개의 진공 라인은 상기 웨이퍼의 중심부에 각각 동일한 진공 압력을 인가할 수 있다.The plurality of vacuum lines may apply the same vacuum pressure to the center of the wafer, respectively.
상기 웨이퍼 척을 일 방향을 따라 이동시키는 이동 장치;를 더 포함할 수 있다.A moving device for moving the wafer chuck along one direction may further include a.
상기 웨이퍼의 주변부를 지지하는 안착부;를 더 포함할 수 있다.It may further include a seating portion for supporting the peripheral portion of the wafer.
상기 안착부는 상기 웨이퍼 척의 원주 방향을 따라 소정의 각도를 구비하도록 연장된 제1 및 제2 지지부;를 포함하며, 상기 제1 및 제2 지지부는 상기 웨이퍼 척을 중심으로 소정의 간격을 사이에 두고 서로 이격되도록 배치될 수 있다.The seating part includes first and second support parts extending to have a predetermined angle along the circumferential direction of the wafer chuck, wherein the first and second support parts have a predetermined distance between the wafer chucks. It may be arranged to be spaced apart from each other.
상기 제1 지지부는 서로 다른 높이의 제1-1 및 제1-2 지지면을 구비하고, 상기 제2 지지부는 서로 다른 높이의 제2-1 및 제2-2 지지면을 구비할 수 있다.The first support part may have first-first and second-second support surfaces having different heights, and the second support part may have second-first and second-second support surfaces having different heights.
상기 제1-1 및 제1-2 지지면 사이에 배치되며, 소정의 곡률을 구비하는 곡면 형상의 제1 단차부 및, 상기 제2-1 및 제2-2 지지면 사이에 배치되며, 소정의 곡률을 구비하는 곡면 형상의 제2 단차부를 포함할 수 있다.Disposed between the first-first and first-second support surfaces, the first stepped portion having a curved shape, and disposed between the second-first and second-second support surfaces, and It may include a second step of the curved shape having a curvature of.
상기 웨이퍼의 정렬 상태를 감지하기 위한 검출 센서를 더 포함할 수 있다.The apparatus may further include a detection sensor for detecting an alignment state of the wafer.
일 실시예에 따른 웨이퍼 이송 장치는 중심부와 주변부의 두께가 상이한 웨이퍼를 지지하기 위한 몸체; 및 상기 몸체 상에 형성되고 진공 압력을 발생시켜 상기 웨이퍼의 주변부를 흡착하는 진공홀;을 포함할 수 있다.According to one embodiment, a wafer transfer device includes a body for supporting a wafer having a different thickness from a center portion and a peripheral portion thereof; And a vacuum hole formed on the body and generating a vacuum pressure to adsorb the periphery of the wafer.
상기 몸체로부터 연장되는 제1 가지 및 상기 몸체로부터 연장되는 제2 가지를 더 포함할 수 있다.It may further include a first branch extending from the body and a second branch extending from the body.
상기 진공홀은 상기 몸체 상에 형성된 제1 진공홀, 상기 제1 가지 상에 형성된 제2 진공홀 및 상기 제2 가지 상에 형성된 제3 진공홀을 포함하고, 상기 몸체, 상기 제1 가지 및 상기 제2 가지는 Y자 형상을 이루고, 상기 제1 내지 제3 진공홀은 삼각형 형상으로 배치될 수 있다.The vacuum hole includes a first vacuum hole formed on the body, a second vacuum hole formed on the first branch, and a third vacuum hole formed on the second branch, wherein the body, the first branch, and the The second branch forms a Y shape, and the first to third vacuum holes may be arranged in a triangular shape.
상기 제1 내지 제3 진공홀 각각은 상기 웨이퍼의 주변부에 인접하는 상기 웨이퍼의 중심부와 대응되도록 배치될 수 있다.Each of the first to third vacuum holes may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
일 실시예에 따른 웨이퍼 이송 장치는, 중심부와 주변부의 두께가 상이한 웨이퍼를 지지하기 위한 판 형상의 베이스부; 상기 베이스부와 단차를 구비하도록 형성되고 서로 상기 베이스부 상에 서로 이격되도록 배치된 제1 가이드 월 및 제2 가이드 월; 및 상기 웨이퍼의 주변부를 지지하는 접촉 패드부;를 더 포함할 수 있다.In one embodiment, a wafer transfer device includes a plate-shaped base portion for supporting a wafer having a different thickness from a central portion and a peripheral portion; A first guide wall and a second guide wall formed to have a step with the base part and disposed to be spaced apart from each other on the base part; And a contact pad part supporting a peripheral portion of the wafer.
상기 접촉 패드부는 상기 베이스부 상에 형성된 제1 내지 제3 접촉 패드를 포함하고, 상기 제1 내지 제3 접촉 패드는 삼각형 형상으로 배치될 수 있다.The contact pad part may include first to third contact pads formed on the base part, and the first to third contact pads may be disposed in a triangular shape.
상기 제1 내지 제3 접촉 패드 각각은 상기 웨이퍼의 주변부에 인접하는 상기 웨이퍼의 중심부와 대응되도록 배치될 수 있다.Each of the first to third contact pads may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
전술한 본 개시의 과제 해결 수단에 의하면, 박막 형태의 웨이퍼를 웨이퍼 정렬 장치로 별도의 손상 없이 이송 및 안착시킬 수 있다.According to the problem solving means of the present disclosure described above, the wafer in the form of a thin film can be transported and seated without any damage to the wafer alignment device.
또한, 웨이퍼 정렬 장치에 의해 박막 형태의 웨이퍼가 회전하는 경우, 별도의 슬립 현상 없이 웨이퍼를 지지함으로써, 박막 형태의 웨이퍼의 손상을 방지할 수 있다.In addition, when the wafer in the form of a thin film is rotated by the wafer aligning device, the wafer may be prevented from being damaged by supporting the wafer without a separate slip phenomenon.
도 1a는 본 발명의 일 실시예에 따른 웨이퍼 정렬 장치를 도시한 사시도이다. 1A is a perspective view illustrating a wafer alignment apparatus according to an embodiment of the present invention.
도 1b는 본 발명의 일 실시예에 따른 웨이퍼 정렬 장치의 구성을 개략적으로 도시한 개략도이다. 1B is a schematic diagram schematically showing a configuration of a wafer alignment apparatus according to an embodiment of the present invention.
도 2a는 본 발명의 일 실시예에 따른 웨이퍼의 사시도이다. 2A is a perspective view of a wafer in accordance with one embodiment of the present invention.
도 2b는 도 2a에 도시된 웨이퍼를 O-O'선을 따라 절단한 단면도이다.FIG. 2B is a cross-sectional view of the wafer illustrated in FIG. 2A taken along the line O ′.
도 3a는 본 발명의 일 실시예에 따른 안착부의 사시도이다. Figure 3a is a perspective view of the seating portion according to an embodiment of the present invention.
도 3b는 도 3a에 도시된 안착부를 A-A'선을 따라 절단한 안착부의 단면도이다.3B is a cross-sectional view of the mounting portion cut along the line AA ′ of the mounting portion illustrated in FIG. 3A.
도 4a는 본 발명의 일 실시예에 따른 웨이퍼 척의 사시도이다. 4A is a perspective view of a wafer chuck in accordance with one embodiment of the present invention.
도 4b는 도 4a에 도시된 웨이퍼 척의 평면도이다.4B is a top view of the wafer chuck shown in FIG. 4A.
도 5는 본 발명의 일 실시예에 따른 웨이퍼 이송 장치의 사시도이다. 5 is a perspective view of a wafer transfer apparatus according to an embodiment of the present invention.
도 6은 본 발명의 일 실시예에 따른 웨이퍼 이송 장치의 평면도이다.6 is a plan view of a wafer transfer apparatus according to an embodiment of the present invention.
도 7은 본 발명의 다른 실시예에 따른 웨이퍼 이송 장치의 사시도이다. 7 is a perspective view of a wafer transfer apparatus according to another embodiment of the present invention.
도 8은 본 발명의 다른 실시예에 따른 웨이퍼 이송 장치의 평면도이다.8 is a plan view of a wafer transfer apparatus according to another embodiment of the present invention.
본 발명에서 사용되는 용어는 본 발명에서의 기능을 고려하면서 가능한 현재 널리 사용되는 일반적인 용어들을 선택하였으나, 이는 당 분야에 종사하는 기술자의 의도 또는 판례, 새로운 기술의 출현 등에 따라 달라질 수 있다. 또한, 특정한 경우는 출원인이 임의로 선정한 용어도 있으며, 이 경우 해당되는 발명의 설명 부분에서 상세히 그 의미를 기재할 것이다. 따라서 본 발명에서 사용되는 용어는 단순한 용어의 명칭이 아닌, 그 용어가 가지는 의미와 본 발명의 전반에 걸친 내용을 토대로 정의되어야 한다.The terms used in the present invention have been selected as widely used general terms as possible in consideration of the functions in the present invention, but this may vary according to the intention or precedent of the person skilled in the art, the emergence of new technologies and the like. In addition, in certain cases, there is also a term arbitrarily selected by the applicant, in which case the meaning will be described in detail in the description of the invention. Therefore, the terms used in the present invention should be defined based on the meanings of the terms and the contents throughout the present invention, rather than the names of the simple terms.
명세서 전체에서 어떤 부분이 어떤 구성요소를 "포함"한다고 할 때, 이는 특별히 반대되는 기재가 없는 한 다른 구성요소를 제외하는 것이 아니라 다른 구성요소를 더 포함할 수 있음을 의미한다. 또한, 명세서에 기재된 "...부", "...모듈" 등의 용어는 적어도 하나의 기능이나 동작을 처리하는 단위를 의미하며, 이는 하드웨어 또는 소프트웨어로 구현되거나 하드웨어와 소프트웨어의 결합으로 구현될 수 있다.When any part of the specification is to "include" any component, this means that it may further include other components, except to exclude other components unless otherwise stated. In addition, the terms "... unit", "... module" described in the specification means a unit for processing at least one function or operation, which is implemented in hardware or software or a combination of hardware and software. Can be.
아래에서는 첨부한 도면을 참고하여 본 발명의 실시 예에 대하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 그러나 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 실시 예에 한정되지 않는다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.
이하에서는 도면을 참조하여 본 발명의 실시 예들을 상세히 설명한다.Hereinafter, with reference to the drawings will be described embodiments of the present invention;
도 1a는 본 발명의 일 실시예에 따른 웨이퍼 정렬 장치를 도시한 사시도이다. 도 1b는 본 발명의 일 실시예에 따른 웨이퍼 정렬 장치의 구성을 개략적으로 도시한 개략도이다. 도 2a는 본 발명의 일 실시예에 따른 웨이퍼의 사시도이다. 도 2b는 도 2a에 도시된 웨이퍼를 O-O'선을 따라 절단한 단면도이다.1A is a perspective view illustrating a wafer alignment apparatus according to an embodiment of the present invention. 1B is a schematic diagram schematically showing a configuration of a wafer alignment apparatus according to an embodiment of the present invention. 2A is a perspective view of a wafer in accordance with one embodiment of the present invention. FIG. 2B is a cross-sectional view of the wafer illustrated in FIG. 2A taken along the line O ′.
도면들을 참조하면, 본 발명의 일 실시예에 따른 웨이퍼 정렬 장치(1)는, 하우징(100)의 상부에 배치되는 웨이퍼 척(210), 상기 웨이퍼 척(210)을 제1 방향(X)을 따라 이동시키고, 제1 방향(X)을 중심으로 회전시킬 수 있는 구동부(220), 웨이퍼 척(210)의 둘레부를 따라 배치되는 안착부(300), 하우징(100) 상면 상단부의 소정의 높이에 배치되는 검출 센서(400) 및 제어부(600)를 포함할 수 있다.Referring to the drawings, the wafer alignment apparatus 1 according to an embodiment of the present invention, the wafer chuck 210 disposed on the housing 100, the wafer chuck 210 in the first direction (X) The driving unit 220 which can be moved along and rotated about the first direction X, the seating unit 300 disposed along the circumference of the wafer chuck 210, and the predetermined height of the upper end of the upper surface of the housing 100. It may include a detection sensor 400 and the control unit 600 is disposed.
본 발명의 일 실시예에 따른 웨이퍼(W)는 박막 형태로 형성될 수 있다. 일 예로서, 웨이퍼(W)는 원판 형상으로 형성될 수 있다. 이때, 웨이퍼(W)는 중심부(O)와 주변부(P)의 두께가 상이한 타이코 웨이퍼(Taiko Wafer)일 수 있다. 예를 들어 박막 형태의 웨이퍼(W)가 타이코 웨이퍼로 형성된 경우, 중심부(O)의 두께(t1)는 50μm일 수 있으며, 주변부(P)의 두께(t2)는 700μm 일 수 있다. 또한, 웨이퍼(W)의 직경이 8인치(in)인 경우 직경 방향에 대한 주변부(P)의 폭(r)은 1mm 일 수 있다. 다만, 본 발명이 이에 제한되는 것은 아니며, 박막 형태뿐만 아니라 상대적으로 두꺼운 두께를 구비한 웨이퍼(W)에 본 발명의 일 실시예에 따른 웨이퍼 정렬 장치 및 웨이퍼 이송장치가 사용되어도 무방하다. The wafer W according to an embodiment of the present invention may be formed in a thin film form. As an example, the wafer W may be formed in a disc shape. In this case, the wafer W may be a Taiko wafer having a different thickness between the center portion O and the peripheral portion P. FIG. For example, when the thin film wafer W is formed of a tyco wafer, the thickness t 1 of the central portion O may be 50 μm, and the thickness t 2 of the peripheral portion P may be 700 μm. In addition, when the diameter of the wafer W is 8 inches, the width r of the peripheral portion P in the radial direction may be 1 mm. However, the present invention is not limited thereto, and the wafer alignment device and the wafer transfer device according to an embodiment of the present invention may be used for the wafer W having a relatively thick thickness as well as a thin film.
웨이퍼 척(210)은 웨이퍼(W)를 지지할 수 있는 지지부재이다. 일 예로서, 웨이퍼 척(210)은 외형 치수가, 지지되는 웨이퍼(W)와 동일하거나 웨이퍼(W) 보다 한 치수 작게 형성된 원판형상일 수 있다. 일 예로서 상술한 바와 같이 웨이퍼(W)는 박막 형상의 원판으로 형성될 수 있으며, 웨이퍼 척(210)은 박막 형상의 웨이퍼(W)보다 한 치수 작거나 동일하게 형성될 수 있다. 다만 본 발명이 이에 제한되는 것은 아니며, 웨이퍼 척(210)의 형상, 치수 등은 지지되는 웨이퍼(W)의 형상, 치수 등에 따라 설정되어도 무방하다. 웨이퍼(W)와 마주보도록 배치된 웨이퍼 척(210)의 일면(211)은 웨이퍼 지지면일 수 있으며, 일 예로서, 웨이퍼 척(210)이 진공 척으로 형성된 경우, 웨이퍼 척(210)의 일면(211)에 배치된 진공 라인(270)로부터 공기를 흡인하여 흡인력을 발생시킴으로써, 웨이퍼(W)를 고정시킬 수 있다.The wafer chuck 210 is a support member that can support the wafer (W). As an example, the wafer chuck 210 may have a disc shape having an external dimension equal to or supported by the wafer W supported by the wafer chuck. As an example, as described above, the wafer W may be formed as a thin film-shaped disk, and the wafer chuck 210 may be formed to be one dimension smaller or the same as the thin film-shaped wafer W. However, the present invention is not limited thereto, and the shape, dimensions, and the like of the wafer chuck 210 may be set according to the shape, dimensions, and the like of the wafer W to be supported. One surface 211 of the wafer chuck 210 disposed to face the wafer W may be a wafer support surface. For example, when the wafer chuck 210 is formed of a vacuum chuck, one surface of the wafer chuck 210 may be formed. The wafer W can be fixed by sucking air from the vacuum line 270 disposed at 211 to generate a suction force.
구동부(220)는 웨이퍼 척(210)을 이동시키기 위한 이동 장치로서, 제1 방향(X)을 따라 구동력을 발생시킬 수 있는 제1 구동 모터(221)를 포함할 수 있다. 또한, 구동부(220)는 웨이퍼 척(210)을 제1 방향(X)을 중심으로 회전시키기 위한 회전 장치로서, 제1 방향(X)을 중심으로 회전하는 회전력을 발생시킬 수 있는 제2 구동 모터(222)를 포함할 수 있다. 이때, 웨이퍼 척(210)은 제1 방향(X)을 따라 연장되고 웨이퍼 척(210)의 다른 일면(212)에 배치된 이동 로드(223)를 포함할 수 있다. 일 예로서, 제1 구동 모터(221)로부터 동력을 전달 받아 이동 로드(223)가 제1 방향(X)을 따라 이동하는 경우, 웨이퍼 척(210) 또한, 제1 방향(X)을 따라 웨이퍼(W)를 향해 이동될 수 있으며, 이에 따라 웨이퍼 척(210)은 웨이퍼(W)를 지지할 수 있다. The driving unit 220 is a moving device for moving the wafer chuck 210, and may include a first driving motor 221 capable of generating a driving force along the first direction X. In addition, the driving unit 220 is a rotation device for rotating the wafer chuck 210 about the first direction X, and a second driving motor capable of generating a rotational force that rotates about the first direction X. 222. In this case, the wafer chuck 210 may include a moving rod 223 extending along the first direction X and disposed on the other surface 212 of the wafer chuck 210. As an example, when the moving rod 223 moves along the first direction X by receiving power from the first driving motor 221, the wafer chuck 210 also wafers along the first direction X. FIG. It can be moved toward (W), so that the wafer chuck 210 can support the wafer (W).
또한 일 예로서, 제2 구동 모터(222)로부터 이동 로드(223)에 동력이 전달되는 경우, 상기 웨이퍼 척(210)은 제1 방향(X)을 중심으로 회전될 수 있으며, 웨이퍼 척(210)에 고정되도록 배치된 웨이퍼(W) 또한 제1축(X)을 중심으로 회전할 수 있다. 이때, 제2 구동 모터(222)는 웨이퍼 척(210)에 동력을 전달할 수 있는 다이렉트 드라이브 모터(Direct Drive Motor)일 수 있으나 본 발명이 이에 제한되는 것은 아니다.Also, as an example, when power is transmitted from the second driving motor 222 to the moving rod 223, the wafer chuck 210 may be rotated about the first direction X, and the wafer chuck 210 may be rotated. ) May be rotated about the first axis (X). In this case, the second driving motor 222 may be a direct drive motor that can transfer power to the wafer chuck 210, but the present invention is not limited thereto.
상술한 바와 같이 웨이퍼(W)에 형성된 노치를 검출하기 위해 웨이퍼 척(210)이 회전하게 되면 매우 정밀한 작업이 요구되는 반도체 공정임에도 불구하고 원심력 등에 의해 웨이퍼(W)가 미끄러질 수 있다. 웨이퍼(W)의 슬립을 방지하기 위해 웨이퍼 척(210)에 구비된 진공 라인(270)를 이용하여 웨이퍼(W)를 지지하는 방법은 도 4a 및 도 4b를 참조하여 보다 구체적으로 후술한다.As described above, when the wafer chuck 210 is rotated to detect the notch formed on the wafer W, the wafer W may slide due to centrifugal force even though the semiconductor process requires very precise work. A method of supporting the wafer W using the vacuum line 270 provided in the wafer chuck 210 to prevent slippage of the wafer W will be described below in more detail with reference to FIGS. 4A and 4B.
안착부(300)는 웨이퍼(W)를 지지할 수 있는 지지부재이다. 일 예로서, 안착부(300)는 웨이퍼 척(210)의 원주 방향을 따라 연장되도록 형성되어 웨이퍼(W)의 주변부(P)를 지지하도록 배치될 수 있다. 또한, 안착부(300)는 웨이퍼(W)가 안착부(300)에 착오로 안착된 경우, 웨이퍼(W)의 주변부(P)를 지지할 수 있는 단차부(320)를 포함할 수 있다. 웨이퍼(W)의 이송중 웨이퍼(W)의 손상을 방지할 수 있는 단차부(320)와 관련된 사항은 도 3a 및 도 3b를 이용하여 보다 구체적으로 후술한다.The seating part 300 is a support member capable of supporting the wafer (W). As an example, the seating part 300 may be formed to extend along the circumferential direction of the wafer chuck 210 and may be disposed to support the peripheral portion P of the wafer W. In addition, the seating part 300 may include a stepped part 320 capable of supporting the peripheral portion P of the wafer W when the wafer W is accidentally seated on the seating part 300. Matters related to the stepped portion 320 that may prevent damage to the wafer W during the transfer of the wafer W will be described in more detail later with reference to FIGS. 3A and 3B.
검출센서(400)는 웨이퍼 척(210)의 일면(211)과 마주보도록 배치되고, 웨이퍼 척(210)의 회전에 따라 회전되는 웨이퍼(W)의 노치 및 중심점을 검출할 수 있다. 일 예로서, 검출센서(400)는 비젼 카메라일 수 있으며, 검출센서(400)가 비젼 카메라로 마련된 경우, 검출센서(400)는 웨이퍼(W)에 마련된 노치 및 중심점을 촬영하여, 노치 및 중심점의 위치를 인식할 수 있다. The detection sensor 400 is disposed to face the one surface 211 of the wafer chuck 210, and detects the notch and the center point of the wafer W that rotates according to the rotation of the wafer chuck 210. For example, the detection sensor 400 may be a vision camera, and when the detection sensor 400 is provided as a vision camera, the detection sensor 400 photographs the notch and the center point provided on the wafer W, and notches and the center point. Can recognize the location of.
제어부(600)는 검출 센서(400)에 의해 감지된 웨이퍼(W)의 정렬 상태에 따라 구동부(220)에 제어 신호를 인가하여 웨이퍼(W)의 정렬을 일치시킬 수 있다. 일 예로서, 웨이퍼(W)가 웨이퍼 척(210)에 중심이 일치하지 않은 상태, 즉, 비정렬 상태로 고정되고, 웨이퍼 척(210)이 구동부(220)에 의해 회전 구동될 때, 상기 검출 센서(400)가 편심된 상태로 회전하는 웨이퍼(W)의 플랫존(flatzone) 또는 노치(notch) 등을 감지하여 이를 제어부(600)에 전달할 수 있다. 이때, 제어부(600)는, 전술한 검출 센서(400)에 의해 실제 웨이퍼(W)의 중심과 웨이퍼 척(210) 중심 사이의 차이를 알아낼 수 있으며, 회전 장치 예를 들어, 제2 구동 모터(222)에 제어신호를 인가하여 웨이퍼 척(210)을 회전시킴으로써, 웨이퍼(W) 의 중심을 정렬 시킬 수 있다. The controller 600 may apply a control signal to the driver 220 according to the alignment state of the wafer W detected by the detection sensor 400 to match the alignment of the wafer W. FIG. As an example, when the wafer W is fixed in a state in which the center of the wafer chuck is not aligned with the wafer chuck 210, that is, unaligned, and the wafer chuck 210 is rotationally driven by the driver 220, the detection is performed. The sensor 400 may detect a flat zone or a notch of the wafer W rotating in an eccentric state, and transmit the same to the controller 600. At this time, the control unit 600 can determine the difference between the center of the actual wafer (W) and the center of the wafer chuck 210 by the above-described detection sensor 400, the rotation device, for example, the second drive motor ( The center of the wafer W may be aligned by applying a control signal to the 222 to rotate the wafer chuck 210.
이하에서는, 웨이퍼(W)의 정렬을 위해 웨이퍼(W)를 회전시키기 이전에 박막 형상의 웨이퍼(W)가 웨이퍼 정렬 장치(1)로 이송되어 웨이퍼(W)가 안착 및 지지되는 웨이퍼 척(210) 및 안착부(300)에 대해 보다 구체적으로 서술한다.Hereinafter, the wafer chuck 210 in which the thin film-shaped wafer W is transferred to the wafer alignment device 1 before the wafer W is rotated for alignment of the wafer W so that the wafer W is seated and supported. ) And the mounting portion 300 will be described in more detail.
도 3a는 본 발명의 일 실시예에 따른 안착부의 사시도이다. 도 3b는 도 3a에 도시된 안착부를 A-A'선을 따라 절단한 안착부의 단면도이다.Figure 3a is a perspective view of the seating portion according to an embodiment of the present invention. 3B is a cross-sectional view of the mounting portion cut along the line AA ′ of the mounting portion illustrated in FIG. 3A.
도 3a 및 도 3b를 참조하면, 본 발명의 일 실시예에 따른 안착부(300)은 웨이퍼 척(210)의 원주 방향을 따라 웨이퍽 척(210)의 일부를 둘러싸도록 형성된 제1 및 제2 지지부(311, 312)을 포함할 수 있다. 일 실시예에 따라, 제1 및 제2 지지부(311, 312)는 웨이퍽 척(210)의 원주 방향을 따라 소정의 각도(α)를 구비하도록 연장될 수 있다. 이때, 제1 및 제2 지지부(311)는 웨이퍼 척(210)의 원주 방향을 따라 소정의 간격을 사이에 두고 서로 이격되도록 배치될 수 있으며, 또한, 제1 및 제2 지지부(311)는 웨이퍼 척(210)을 사이에 두고 서로 마주보도록 배치될 수 있다.3A and 3B, the seating part 300 according to an exemplary embodiment of the present invention may include first and second parts that surround a portion of the wayuck chuck 210 along the circumferential direction of the wafer chuck 210. Supports 311 and 312 may be included. According to an embodiment, the first and second supports 311 and 312 may extend to have a predetermined angle α along the circumferential direction of the wayuck chuck 210. In this case, the first and second support parts 311 may be disposed to be spaced apart from each other at a predetermined interval along the circumferential direction of the wafer chuck 210, and the first and second support parts 311 may be disposed on the wafer. The chuck 210 may be disposed to face each other with the chuck 210 therebetween.
제1 및 제2 지지부(311, 312)는 웨이퍼(W), 보다 구체적으로 웨이퍼(W)의 주변부(P)가 지지될 수 있는 제1-1 및 제2-1 지지면(3111, 3121)과, 제1-1 및 제2-1 지지면(3111, 3121)과 소정의 단차를 구비하도록 배치된 제1-2 및 제2-2 지지면(3112, 3122)를 포함할 수 있다. 제1-1 지지면(3111)과 제1-2 지지면(3112) 사이 및 제2-1 지지면(3121)과 제2-2 지지면(3122) 사이에는 제1 및 제2 단차부(321, 322)가 각각 배치될 수 있다. 제1-1 및 제2-1 지지면(3111, 3121)은 웨이퍼(W)의 일면, 보다 구체적으로 웨이퍼(W)의 주변부(P)가 지지될 수 있도록 웨이퍼 척(210)의 직경 방향을 따라 연장될 수 있다. 일 예로서, 웨이퍼(W)가 웨이퍼 정렬 장치(1)로 이송되는 경우, 웨이퍼(W)는 제1-1 및 제2-1 지지면(3111, 3121)에 의해 지지될 수 있으며, 이때 웨이퍼 척(210)의 직경 방향에 대한 제1-1 및 제2-1 지지면(3111, 3121)의 폭(D1)은 1mm이하일 수 있다. 다만 본 발명이 이에 제한되는 것은 아니며, 제1-1 및 제2-1 지지면(3111, 3121)의 폭(D1)은 웨이퍼(W)의 주변부(P)의 직경 방향 폭에 따라 상이하게 결정될 수 있다.The first and second support portions 311 and 312 may include the first-first and second- first support surfaces 3111 and 3121 on which the wafer W, more specifically, the peripheral portion P of the wafer W may be supported. And the first-second and second-second support surfaces 3112 and 3122 disposed to have predetermined steps with the first-first and second- first support surfaces 3111 and 3121. First and second stepped portions between the first-first support surface 3111 and the first-second support surface 3112 and between the second-first support surface 3121 and the second-second support surface 3122 ( 321 and 322 may be disposed respectively. The first-first and second- first support surfaces 3111 and 3121 may extend the radial direction of the wafer chuck 210 so that one surface of the wafer W, more specifically, the peripheral portion P of the wafer W may be supported. Can be extended accordingly. As an example, when the wafer W is transferred to the wafer alignment device 1, the wafer W may be supported by the first-first and second- first support surfaces 3111 and 3121, where the wafer The width D 1 of the first-first and second- first support surfaces 3111 and 3121 in the radial direction of the chuck 210 may be 1 mm or less. However, the present invention is not limited thereto, and the width D 1 of the first-first and second- first support surfaces 3111 and 3121 may be different depending on the width in the radial direction of the peripheral portion P of the wafer W. Can be determined.
제1-2 및 제2-2 지지면(3112, 3122)은 제1-1 및 제2-1 지지면(3111, 3121)과 단차를 이루도록 배치되며, 제1-1 및 제2-1 지지면(3111, 3121) 보다 내측, 즉, 제1-1 및 제2-1 지지면(3111, 3121) 보다 웨이퍼 척(210)에 더 인접하도록 배치될 수 있다. 제1-2 및 제2-2 지지면(3112, 3122)은 웨이퍼(W)를 웨이퍼 정렬 장치(1)로 이송하여 안착시키는 과정에서 웨이퍼(W)가 제1-1 및 제2-1 지지면(3111, 3121)에 정확하게 안착되지 못한 경우를 대비하기 위한 지지 부재이다. 일 예로서, 웨이퍼 척(210)의 직경 방향에 대한 제1-2 및 제2-2 지지면(3112, 3122)의 폭(D2) 또한 1mm이하일 수 있다. 다만, 본 발명이 이에 제한되는 것은 아니며, 제1-2 및 제2-2 지지면(3112, 3122)의 폭(D2) 또한, 웨이퍼(W)의 주변부(P)의 직경 방향 폭에 따라 상이하게 결정될 수 있다.The 1-2-2 and the 2-2 support surfaces 3112 and 3122 are disposed to form a step with the 1-1 and 2-1 support surfaces 3111 and 3121, and support the 1-1 and 2-1 support. It may be arranged to be closer to the wafer chuck 210 than the surfaces 3111 and 3121, that is, the first-first and second- first support surfaces 3111 and 3121. The first and second support surfaces 3112 and 3122 support the wafers 1-1 and 2-1 in the process of transferring the wafer W to the wafer alignment device 1 and seating the wafers W. FIG. It is a supporting member for preparing the case where it is not seated on the surfaces 3111 and 3121 correctly. As an example, the width D 2 of the first and second support surfaces 3112 and 3122 in the radial direction of the wafer chuck 210 may also be 1 mm or less. However, the present invention is not limited thereto, and the width D 2 of the first-second and second-second support surfaces 3112 and 3122 also depends on the width in the radial direction of the peripheral portion P of the wafer W. Can be determined differently.
제1 및 제2 단차부(321, 322)는 제1-1 지지면(3111)과 제1-2 지지면(3112) 사이 및 제2-1 지지면(3121)과 제2-2 지지면(3122) 사이에 배치되어 웨이퍼(W)가 제1-1 지지면(3111) 또는 제2-1 지지면(3121)으로부터 제1-2 지지면(3112) 또는 제2-2 지지면(3122)으로 낙하하는 경우, 웨이퍼(W)의 이동 경로를 가이드할 수 있는 가이드 부재이다. 일 예로서, 제1 단차부(321)는 제1-1 지지면(3111)과 제1-2 지지면(3112) 사이에서 소정의 곡률을 구비하는 곡면 형상으로 형성될 수 있다. 이에 따라 웨이퍼(W)가 제1-1 지지면(3111)으로부터 제1-2 지지면(3112)으로 낙하하는 경우에도 웨이퍼(W)의 측부가 제1 단차부(321)에 구비된 곡면부를 따라 이동될 수 있으며, 이로 인해 제1-1 지지면(3111)으로부터 제1-2 지지면(3112)으로 낙하하는 경우 웨이퍼(W)에 인가될 수 있는 충격을 최소화할 수 있다. 제2-1 지지면(3121)과 제2-2 지지면(3122) 사이에 형성된 제2 단차부(322) 또한 제1 단차부(321)와 실질적으로 동일한 기술적 특징을 구비하고 있으므로 설명의 편의상 여기서는 설명을 생략한다.The first and second stepped portions 321 and 322 are provided between the first-first support surface 3111 and the first-second support surface 3112 and the second-first support surface 3121 and the second-second support surface. The wafers W are disposed between the first and second support surfaces 3112 and 2121 or 3-2 from the first-first support surface 3111 or the second-first support surface 3121. ), It is a guide member capable of guiding the movement path of the wafer (W). As an example, the first stepped portion 321 may be formed in a curved shape having a predetermined curvature between the first-first support surface 3111 and the first-second support surface 3112. Accordingly, even when the wafer W falls from the first-first support surface 3111 to the first-second support surface 3112, the curved portion of the side portion of the wafer W provided in the first stepped portion 321 is provided. In this case, the impact that may be applied to the wafer W may be minimized when falling from the first-first support surface 3111 to the first-second support surface 3112. Since the second stepped portion 322 formed between the second-first support surface 3121 and the second-second support surface 3122 also has substantially the same technical features as the first stepped portion 321, for convenience of description, The description is omitted here.
도 4a는 본 발명의 일 실시예에 따른 웨이퍼 척의 사시도이다. 도 4b는 도 4a에 도시된 웨이퍼 척의 평면도이다.4A is a perspective view of a wafer chuck in accordance with one embodiment of the present invention. 4B is a top view of the wafer chuck shown in FIG. 4A.
도 4a 및 도 4b를 참조하면, 웨이퍼 척(210)의 일면(211)에는 웨이퍼(W)가 지지될 수 있으며, 상기 웨이퍼 척(210)의 일면(211)에는 복수 개의 진공 라인(270)이 배치될 수 있다. 일 예로서, 웨이퍼 척(210)의 중심을 기준으로 동심원 형상의 제1 내지 제4 진공 라인(271-274)이 웨이퍽 척(210)의 일면(211)에 배치될 수 있다. 이때, 제1 내지 제4 진공 라인(271-274)은 등간격, 예를 들어 웨이퍼 척(210)의 직경 방향을 따라 동일한 간격을 사이에 두고 서로 이격되도록 배치될 수 있으며, 제1 내지 제4 진공 라인(271-274) 각각의 공기 압력은 동일하게 유지될 수 있다. 4A and 4B, a wafer W may be supported on one surface 211 of the wafer chuck 210, and a plurality of vacuum lines 270 are provided on one surface 211 of the wafer chuck 210. Can be deployed. As an example, the first to fourth vacuum lines 271-274 having a concentric shape with respect to the center of the wafer chuck 210 may be disposed on one surface 211 of the wayuck chuck 210. In this case, the first to fourth vacuum lines 271-274 may be arranged to be spaced apart from each other at equal intervals, for example, at equal intervals along the radial direction of the wafer chuck 210. The air pressure in each of the vacuum lines 271-274 can be maintained the same.
일 예로서, 웨이퍼 척(210)의 일면(211)에 웨이퍼(W)가 지지되는 경우, 제1 내지 제4 진공 라인(271-274)에 존재하는 기체를 흡입할 수 있으며, 이에 따라 제1 내지 제4 진공 라인(271-274)은 진공 상태가 될 수 있다. 이에 따라 웨이퍼 척(210)의 일면(211)과 웨이퍼(W) 사이의 공간도 진공 상태가 될 수 있으며, 웨이퍼 척(210)의 일면(211)에 웨이퍼(W)가 흡착 고정될 수 있다. 일 예로서, 웨이퍼(W)가 흡착 고정될 수 있는 웨이퍼 척(210)의 일면(211)에 하나의 진공 라인(270) 만이 배치되는 경우, 웨이퍼(W)를 흡착 고정시키기 위해 상당히 큰 진공 압력이 웨이퍼(W)의 일면에 인가될 수 있다. 다만, 본 발명이 이에 제한되는 것은 아니며, 진공 라인(270)의 개수, 이격 간격 및 진공 라인(270)으로부터 웨이퍼(W)로 인가되는 진공 압력은 웨이퍼(W)의 유형에 따라 변화될 수 있다.As an example, when the wafer W is supported on one surface 211 of the wafer chuck 210, gas existing in the first to fourth vacuum lines 271-274 may be sucked, and thus, the first The fourth to fourth vacuum lines 271-274 may be in a vacuum state. Accordingly, the space between the one surface 211 of the wafer chuck 210 and the wafer W may also be in a vacuum state, and the wafer W may be sucked and fixed to the one surface 211 of the wafer chuck 210. As an example, when only one vacuum line 270 is disposed on one surface 211 of the wafer chuck 210 where the wafer W may be suction fixed, a significantly large vacuum pressure may be used for suction fixing the wafer W. It may be applied to one surface of the wafer (W). However, the present invention is not limited thereto, and the number of vacuum lines 270, the spaced intervals, and the vacuum pressure applied from the vacuum line 270 to the wafer W may be changed according to the type of the wafer W. FIG. .
상술한 바와 같이, 웨이퍼(W)가 박막 형태로 형성되는 경우, 웨이퍼(W)의 중심부(O)의 좁은 면적에 상대적으로 큰 진공 압력이 인가됨으로써, 웨이퍼(W)의 휘어짐(워피지;warpage)이 발생될 수 있다. 반면, 본 발명의 일 실시예에 따르면, 웨이퍼 척(210)에 복수 개의 진공 라인(270), 예를 들어 제1 내지 제4 진공 라인(271-274)이 배치됨으로써 하나의 진공 라인으로부터 웨이퍼(W)로 인가되는 진공 압력을 4개의 라인에서 나누어 웨이퍼(W)로 인가할 수 있으며, 이에 따라 박막 형태로 형성된 웨이퍼(W)에 대해서도 휘어짐(워피지;warpage) 없이 박막 형태의 웨이퍼(W)를 웨이퍼 척(210)의 일면(211)에 진공 압착시킬 수 있다.As described above, when the wafer W is formed in a thin film form, a relatively large vacuum pressure is applied to a narrow area of the center portion O of the wafer W, whereby the wafer W is warped (warpage). ) May be generated. In contrast, according to an embodiment of the present invention, a plurality of vacuum lines 270, for example, first to fourth vacuum lines 271-274, are disposed on the wafer chuck 210 so that the wafers may be separated from one vacuum line. The vacuum pressure applied to W) can be divided into four lines and applied to the wafer W. Accordingly, the wafer W in a thin film form without warpage can be applied to the wafer W formed in the thin film form. May be vacuum compressed onto one surface 211 of the wafer chuck 210.
도 5는 본 발명의 일 실시예에 따른 웨이퍼 이송 장치의 사시도이다. 도 6은 본 발명의 일 실시예에 따른 웨이퍼 이송 장치의 평면도이다.5 is a perspective view of a wafer transfer apparatus according to an embodiment of the present invention. 6 is a plan view of a wafer transfer apparatus according to an embodiment of the present invention.
도 5 및 도 6을 참조하면, 본 발명의 일 실시예에 따른 웨이퍼 이송 장치(800)는 몸체(810), 몸체(810)로부터 연장되는 제1 가지(820) 및 몸체(810)로부터 연장되는 제2 가지(820)를 포함하는 Y 자 형상을 구비할 수 있다. 5 and 6, the wafer transport apparatus 800 according to an embodiment of the present invention extends from the body 810, the first branch 820 extending from the body 810, and the body 810. It may have a Y-shape including a second branch (820).
몸체(810), 제1 가지(820) 및 제2 가지(830)는 웨이퍼(W)에 정전기가 발생하지 않도록 방지하는 재질을 포함할 수 있다. 일 예로서, 몸체(810), 제1 가지(820) 및 제2 가지(830)는 전기절연저항이 상대적으로 낮은 금속 산화물을 포함할 수 있다. 예를 들면, 전기절연저항이 1옴에 가까운 이산화 타이타늄(titanium dioxide)을 포함할 수 있다. 또한 다른 예로서, 몸체(810), 제1 가지(820) 및 제2 가지(830)의 표면이 이산화 타이타늄(titanium dioxide)으로 코팅될 수 있다. 또한 다른 예로서, 몸체(810), 제1 가지(820) 및 제2 가지(830)는 알루미늄(aluminum)을 포함한 세라믹(ceramic) 재질을 포함할 수 있다. The body 810, the first branch 820, and the second branch 830 may include a material for preventing static electricity from occurring on the wafer W. For example, the body 810, the first branch 820, and the second branch 830 may include a metal oxide having a relatively low electrical insulation resistance. For example, it may include titanium dioxide having an electrical insulation resistance close to 1 ohm. As another example, the surfaces of the body 810, the first branch 820, and the second branch 830 may be coated with titanium dioxide. As another example, the body 810, the first branch 820, and the second branch 830 may include a ceramic material including aluminum.
웨이퍼 이송 장치(800)는 제1 내지 제3 진공홀들(841- 843)을 포함할 수 있다. 제1 내지 제3 진공홀들(841- 843)은 진공 압력을 발생시킴으로써 이송 동안 웨이퍼(W)를 진공 흡착 시킬 수 있다. 제1 내지 제3 진공홀들(841- 843)은 웨이퍼(W)를 이송하기 위해 적절한 위치에 배치될 수 있다. 예를 들면, 제1 진공홀(841)은 몸체(810)상에 배치되고, 제2 진공홀(842)은 제1 가지(820) 상에 배치되고, 제3 진공홀(843)은 제2 가지(830) 상에 배치될 수 있다. 따라서, 상기 제1 내지 제3 진공홀들(841- 843)은 삼각형으로 배치되어, 상기 삼각형의 중심이 상기 웨이퍼(W)의 중심과 일치하도록 상기 웨이퍼(W)를 웨이퍼 이송 장치(800) 상에 위치시킬 수 있다. The wafer transfer apparatus 800 may include first to third vacuum holes 841-843. The first to third vacuum holes 841 to 843 may generate a vacuum pressure to vacuum suck the wafer W during the transfer. The first to third vacuum holes 841-843 may be disposed at an appropriate position for transferring the wafer (W). For example, the first vacuum hole 841 is disposed on the body 810, the second vacuum hole 842 is disposed on the first branch 820, and the third vacuum hole 843 is the second. It may be disposed on the branch 830. Accordingly, the first to third vacuum holes 841 to 843 are disposed in a triangle, so that the center of the triangle coincides with the center of the wafer W so that the wafer W is placed on the wafer transfer device 800. Can be located at
상술한 바와 같이 웨이퍼(W)가 박막 형태로 형성되고, 중심부(O)와 주변부(P)의 두께가 상이하도록, 예를 들어 중심부(O)의 두께보다 주변부(P)의 두께가 더 두껍게 형성되는 경우, 제1 내지 제3 진공홀들(841- 843)은 주변부(P)에 인접하는 상기 웨이퍼의 중심부(O)와 접촉하여 웨이퍼(P)를 진공 흡착하도록 배치될 수 있다. 일 예로서, 웨이퍼(W)의 직경 방향에 대한 주변부(P)의 폭(r)을 구비하는 경우, 제1 진공홀(841)은 웨이퍼(W)의 직경 방향을 따라 웨이퍼(W)의 최외곽부로부터 소정의 제1 이격 거리(Z1)를 구비한 채 이격되도록 몸체(810) 상에 배치될 수 있다. 또한, 제2 진공홀(842)은 웨이퍼(W)의 직경 방향을 따라 웨이퍼(W)의 최외곽부로부터 소정의 제2 이격 거리(Z2)를 구비한 채 이격되도록 제1 가지(820)상에 배치될 수 있다. 또한, 제3 진공홀(843)은 웨이퍼(W)의 직경 방향을 따라 웨이퍼(W)의 최외곽부로부터 소정의 제3 이격 거리(Z3)를 구비한 채 이격되도록 제2 가지(830)상에 배치될 수 있다. 예를 들어, 웨이퍼(W)의 직경 방향에 대한 주변부(P)의 폭(r)은 2mm일 수 있으며, 제1 내지 제3 이격 거리(Z1-Z3)는 3mm일 수 있으나 본 발명이 이에 제한되는 것은 아니다.As described above, the wafer W is formed in a thin film form, and the thickness of the peripheral portion P is thicker than the thickness of the central portion O, for example, so that the thicknesses of the central portion O and the peripheral portion P are different. In this case, the first to third vacuum holes 841 to 843 may be disposed to be in contact with the central portion O of the wafer adjacent to the peripheral portion P to suck the wafer P in vacuum. As an example, when the width r of the peripheral portion P with respect to the radial direction of the wafer W is provided, the first vacuum hole 841 is the maximum of the wafer W along the radial direction of the wafer W. It may be disposed on the body 810 to be spaced apart from the outer portion with a predetermined first separation distance Z 1 . In addition, the first branch 820 is spaced apart from the outermost portion of the wafer W along the radial direction of the wafer W with a predetermined second separation distance Z 2 . It can be placed on. In addition, the second branch 830 may be spaced apart from the outermost portion of the wafer W along the radial direction of the wafer W with a predetermined third separation distance Z 3 . It can be placed on. For example, the width r of the peripheral portion P in the radial direction of the wafer W may be 2 mm, and the first to third separation distances Z 1 to Z 3 may be 3 mm, but the present invention It is not limited to this.
상술한 바와 같이, 웨이퍼(W)가 박막 형태로 형성되고 중심부(O)와 주변부(P)의 두께가 상이한 경우, 웨이퍼(W)의 중심부(O)에 제1 내지 제3 진공홀(841-843)을 배치시킴으로써 상대적으로 두께가 얇은 중심부(O)에 상대적으로 큰 진공 압력이 인가될 수 있으며, 이에 따라, 웨이퍼(W)가 손상될 수 있다. 반면, 본 발명의 일 실시예에 따르면, 제1 내지 제3 진공홀(841-843)은 웨이퍼(W)의 주변부(P)에 인접하는 상기 웨이퍼의 중심부(O)와 대응하도록 배치되고, 상기 제1 내지 제3 진공홀(841-843)이 형성하는 삼각형의 중심이 상기 웨이퍼(W)의 중심과 일치하도록 배치됨으로써, 제1 내지 제3 진공홀(841-843)은 서로 간에 상당한 간격을 구비한 채 서로 이격되도록 배치될 수 있다. 이에 따라, 제1 내지 제3 진공홀(841-843)에 의해 웨이퍼에 인가되는 압력이 웨이퍼의 보다 넓은 면적에 걸쳐 분포될 수 있으며, 제1 내지 제3 진공홀(841-843)을 이용하여 상대적으로 동일한 진공 압력을 인가하는 경우에도 웨이퍼(W)의 손상을 방지한 채 웨이퍼(W)를 이송시킬 수 있다.As described above, when the wafer W is formed in a thin film form and the thicknesses of the central portion O and the peripheral portion P are different, the first to third vacuum holes 841 to the central portion O of the wafer W are formed. By placing 843, a relatively large vacuum pressure can be applied to the relatively thin center portion O, which can damage the wafer W. On the other hand, according to an embodiment of the present invention, the first to third vacuum holes 841-843 are disposed to correspond to the central portion O of the wafer adjacent to the peripheral portion P of the wafer W. Since the centers of the triangles formed by the first to third vacuum holes 841 to 843 are arranged to coincide with the center of the wafer W, the first to third vacuum holes 841 to 843 are substantially spaced from each other. It may be arranged to be spaced apart from each other. Accordingly, the pressure applied to the wafer by the first to third vacuum holes 841-843 may be distributed over a larger area of the wafer, and by using the first to third vacuum holes 841-843. Even when a relatively same vacuum pressure is applied, the wafer W can be transported while preventing damage to the wafer W. FIG.
도 7은 본 발명의 다른 실시예에 따른 웨이퍼 이송 장치의 사시도이다. 도 8은 본 발명의 다른 실시예에 따른 웨이퍼 이송 장치의 평면도이다.7 is a perspective view of a wafer transfer apparatus according to another embodiment of the present invention. 8 is a plan view of a wafer transfer apparatus according to another embodiment of the present invention.
도 7 및 도 8을 참조하면, 본 발명의 일 실시예에 따른 웨이퍼 이송 장치(800)는 베이스부(850), 제1 가이드월(860) 및 제2 가이드월(870)을 포함할 수 있다. 제1 가이드월(860) 및 제2 가이드월(870)은 판상 형상의 베이스부(850) 보다 높은 높이로 형성되어, 웨이퍼(W)의 이탈을 방지할 수 있다. 베이스부(850)는 정전기가 발생하지 않도록 방지하는 재질을 포함할 수 있다. 일 예로서 베이스부(850)는 전기절연저항이 상대적으로 낮은 금속 산화물을 포함할 수 있다. 예를 들면, 이산화 타이타늄(titanium dioxide)을 포함할 수 있다. 또는, 베이스부(850)의 표면이 이산화 타이타늄(titanium dioxide)으로 코팅될 수 있다. 또는, 베이스부(850)는 알루미늄(aluminum)을 포함한 세라믹(ceramic) 재질을 포함할 수 있다.7 and 8, the wafer transfer apparatus 800 according to an embodiment of the present invention may include a base portion 850, a first guide wall 860, and a second guide wall 870. . The first guide wall 860 and the second guide wall 870 may be formed at a height higher than that of the base portion 850 having a plate shape, thereby preventing the wafer W from being separated. The base unit 850 may include a material for preventing static electricity from occurring. As an example, the base unit 850 may include a metal oxide having a relatively low electrical insulation resistance. For example, it may include titanium dioxide. Alternatively, the surface of the base portion 850 may be coated with titanium dioxide. Alternatively, the base portion 850 may include a ceramic material including aluminum.
본 발명의 일 실시예에 따른 웨이퍼 이송 장치(800)는 베이스부(850) 상에 배치된 복수 개의 접촉 패드(880)를 더 포함할 수 있다. 일 예로서, 제1 내지 제3 접촉 패드들(881-883)은 베이스부(850)상에 배치될 수 있으며, 제1 내지 제3 접촉 패드들(881-883)은 삼각형 형상으로 배치될 수 있다. 예를 들어 제1 내지 제3 접촉 패드들(881-883)은 제1 가이드월(860) 및 제2 가이드월(870)의 높이보다 작은 소정의 두께를 가지며, 이에 따라 웨이퍼(W)는 베이스부(850)로부터 이격될 수 있다. The wafer transfer apparatus 800 according to an embodiment of the present invention may further include a plurality of contact pads 880 disposed on the base portion 850. As an example, the first to third contact pads 881-883 may be disposed on the base portion 850, and the first to third contact pads 881-883 may be disposed in a triangular shape. have. For example, the first to third contact pads 881-883 have a predetermined thickness smaller than the height of the first guide wall 860 and the second guide wall 870, so that the wafer W has a base. May be spaced apart from the portion 850.
일 예로서, 제1 내지 제3 접촉 패드들(881-883)은 웨이퍼(W)와 접촉하므로, 웨이퍼(W)의 일면에 손상을 주지 않기 위해 탄성을 가진 재질을 포함할 수 있다. 제1 내지 제3 접촉 패드들(881-883)은 폴리이미드계 플라스틱을 포함할 수 있다.For example, since the first to third contact pads 881-883 contact the wafer W, the first to third contact pads 881-883 may include a material having elasticity in order not to damage one surface of the wafer W. FIG. The first to third contact pads 881-883 may include polyimide plastic.
상술한 바와 같이 웨이퍼(W)가 박막 형태로 형성되고, 중심부(O)와 주변부(P)의 두께가 상이하도록, 예를 들어 중심부(O)의 두께보다 주변부(P)의 두께가 더 두껍게 형성되는 경우, 제1 내지 제3 접촉 패드들(881-883)은 주변부(P)와 접촉하여 웨이퍼(P)를 진공 흡착하도록 배치될 수 있다. 제1 내지 제3 접촉 패드들(881-883)의 위치와 주변부(P)와의 관계는 상술한 실시예에서 서술한 것과 실질적으로 동일하므로 서술의 편의상 여기서는 서술을 생략한다. As described above, the wafer W is formed in a thin film form, and the thickness of the peripheral portion P is thicker than the thickness of the central portion O, for example, so that the thicknesses of the central portion O and the peripheral portion P are different. In this case, the first to third contact pads 881-883 may be disposed to be in contact with the peripheral portion P to vacuum-adsorb the wafer P. Since the relationship between the position of the first to third contact pads 881-883 and the peripheral portion P is substantially the same as that described in the above-described embodiment, the description is omitted here for convenience of description.
상술한 바와 같이, 본 발명의 일 실시예에 따르는 웨이퍼 이송 장치(800)에 제1 내지 제3 접촉 패드들(881-883)을 웨이퍼(W)의 주변부(P)에 인접하는 웨이퍼의 중심부(O)와 대응하도록 배치시킴으로써, 제1 내지 제3 접촉 패드들(881-883)을 이용하여 상대적으로 동일한 압력을 인가하는 경우에도 웨이퍼(W)의 손상을 방지한 채 웨이퍼(W)를 이송시킬 수 있다.As described above, in the wafer transfer apparatus 800 according to the embodiment of the present invention, the first to third contact pads 881-883 are positioned at the center of the wafer adjacent to the peripheral portion P of the wafer W ( By arranging to correspond to O), even when relatively the same pressure is applied using the first to third contact pads 881-883, the wafer W can be transported while preventing damage to the wafer W. FIG. Can be.
전술한 본 발명의 설명은 예시를 위한 것이며, 본 발명이 속하는 기술분야의 통상의 지식을 가진 자는 본 발명의 기술적 사상이나 필수적인 특징을 변경하지 않고서 다른 구체적인 형태로 쉽게 변형이 가능하다는 것을 이해할 수 있을 것이다. 그러므로 이상에서 기술한 실시예들은 모든 면에서 예시적인 것이며 한정적이 아닌 것으로 이해해야만 한다. 예를 들어, 단일형으로 설명되어 있는 각 구성 요소는 분산되어 실시될 수도 있으며, 마찬가지로 분산된 것으로 설명되어 있는 구성 요소들도 결합된 형태로 실시될 수 있다.The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive. For example, each component described as a single type may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined form.
본 발명의 범위는 상기 상세한 설명보다는 후술하는 특허청구범위에 의하여 나타내어지며, 특허청구범위의 의미 및 범위 그리고 그 균등 개념으로부터 도출되는 모든 변경 또는 변형된 형태가 본 발명의 범위에 포함되는 것으로 해석되어야 한다.The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

Claims (17)

  1. 하우징;housing;
    상기 하우징의 상부에 배치되고, 중심부와 주변부의 두께가 상이한 웨이퍼를 지지하는 웨이퍼 척; 및A wafer chuck disposed on the housing and supporting a wafer having a different thickness from a central portion and a peripheral portion; And
    상기 웨이퍼 척을 일 축을 중심으로 회전시키는 회전 장치;를 포함하며,Includes a rotating device for rotating the wafer chuck about one axis,
    상기 웨이퍼 척의 일면에 동심원 형상의 복수 개의 진공 라인이 배치되는,A plurality of concentric vacuum lines are disposed on one surface of the wafer chuck,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  2. 제1 항에 있어서,According to claim 1,
    상기 복수 개의 진공 라인은 소정의 간격을 사이에 두고 상기 웨이퍼 척의 직경 방향을 따라 소정의 간격을 사이에 두고 서로 이격되도록 배치되는, The plurality of vacuum lines are arranged to be spaced apart from each other at a predetermined interval along the radial direction of the wafer chuck with a predetermined interval therebetween,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  3. 제2 항에 있어서,The method of claim 2,
    상기 복수 개의 진공 라인은 상기 웨이퍼의 중심부와 마주보도록 배치되어 상기 웨이퍼 척에 상기 웨이퍼를 지지시키는, The plurality of vacuum lines are disposed to face the center of the wafer to support the wafer in the wafer chuck,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  4. 제3 항에 있어서,The method of claim 3, wherein
    상기 복수 개의 진공 라인은 상기 웨이퍼의 중심부에 각각 동일한 진공 압력을 인가하는,The plurality of vacuum lines apply the same vacuum pressure to the center of the wafer, respectively
    웨이퍼 정렬 장치.Wafer Alignment Device.
  5. 제1 항에 있어서,According to claim 1,
    상기 웨이퍼 척을 일 방향을 따라 이동시키는 이동 장치;를 더 포함하는,Further comprising; a movement device for moving the wafer chuck in one direction,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  6. 제1 항에 있어서,According to claim 1,
    상기 웨이퍼의 주변부를 지지하는 안착부;를 더 포함하는,Further comprising; a seating portion for supporting the peripheral portion of the wafer,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  7. 제6 항에 있어서,The method of claim 6,
    상기 안착부는 상기 웨이퍼 척의 원주 방향을 따라 소정의 각도를 구비하도록 연장된 제1 및 제2 지지부;를 포함하며, 상기 제1 및 제2 지지부는 상기 웨이퍼 척을 중심으로 소정의 간격을 사이에 두고 서로 이격되도록 배치되는,The seating part includes first and second support parts extending to have a predetermined angle along the circumferential direction of the wafer chuck, wherein the first and second support parts have a predetermined distance between the wafer chucks. Spaced apart from each other,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  8. 제7 항에 있어서,The method of claim 7, wherein
    상기 제1 지지부는 서로 다른 높이의 제1-1 및 제1-2 지지면을 구비하고, 상기 제2 지지부는 서로 다른 높이의 제2-1 및 제2-2 지지면을 구비하는,The first support portion has first and second support surfaces having different heights, and the second support portion has second and second support surfaces having different heights.
    웨이퍼 정렬 장치.Wafer Alignment Device.
  9. 제8 항에 있어서,The method of claim 8,
    상기 제1-1 및 제1-2 지지면 사이에 배치되며, 소정의 곡률을 구비하는 곡면 형상의 제1 단차부 및, 상기 제2-1 및 제2-2 지지면 사이에 배치되며, 소정의 곡률을 구비하는 곡면 형상의 제2 단차부를 포함하는, Disposed between the first-first and first-second support surfaces, the first stepped portion having a curved shape, and disposed between the second-first and second-second support surfaces, and It includes a second step of the curved shape having a curvature of,
    웨이퍼 정렬 장치.Wafer Alignment Device.
  10. 제1 항에 있어서,According to claim 1,
    상기 웨이퍼의 정렬 상태를 감지하기 위한 검출 센서를 더 포함하는Further comprising a detection sensor for detecting the alignment of the wafer
    웨이퍼 정렬 장치.Wafer Alignment Device.
  11. 중심부와 주변부의 두께가 상이한 웨이퍼를 지지하기 위한 몸체; 및A body for supporting a wafer having a different thickness from the central portion and the peripheral portion; And
    상기 몸체 상에 형성되고 진공 압력을 발생시켜 상기 웨이퍼의 주변부를 흡착하는 진공홀;을 포함하는And a vacuum hole formed on the body and generating a vacuum pressure to adsorb a peripheral portion of the wafer.
    웨이퍼 이송 장치.Wafer transfer device.
  12. 제11 항에 있어서,The method of claim 11, wherein
    상기 몸체로부터 연장되는 제1 가지 및 상기 몸체로부터 연장되는 제2 가지를 더 포함하는, Further comprising a first branch extending from the body and a second branch extending from the body,
    웨이퍼 이송 장치.Wafer transfer device.
  13. 제12 항에 있어서,The method of claim 12,
    상기 진공홀은 상기 몸체 상에 형성된 제1 진공홀, 상기 제1 가지 상에 형성된 제2 진공홀 및 상기 제2 가지 상에 형성된 제3 진공홀을 포함하고, 상기 몸체, 상기 제1 가지 및 상기 제2 가지는 Y자 형상을 이루고, 상기 제1 내지 제3 진공홀은 삼각형 형상으로 배치되는The vacuum hole includes a first vacuum hole formed on the body, a second vacuum hole formed on the first branch, and a third vacuum hole formed on the second branch, wherein the body, the first branch, and the The second branch forms a Y shape, and the first to third vacuum holes are arranged in a triangular shape.
    웨이퍼 이송 장치.Wafer transfer device.
  14. 제13 항에 있어서,The method of claim 13,
    상기 제1 내지 제3 진공홀 각각은 상기 웨이퍼의 주변부에 인접하는 상기 웨이퍼의 중심부와 대응되도록 배치되는,Each of the first to third vacuum holes may be disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer.
    웨이퍼 이송 장치.Wafer transfer device.
  15. 중심부와 주변부의 두께가 상이한 웨이퍼를 지지하기 위한 판 형상의 베이스부; A plate-shaped base portion for supporting a wafer having a different thickness from the central portion and the peripheral portion;
    상기 베이스부와 단차를 구비하도록 형성되고 서로 상기 베이스부 상에 서로 이격되도록 배치된 제1 가이드 월 및 제2 가이드 월; 및A first guide wall and a second guide wall formed to have a step with the base part and disposed to be spaced apart from each other on the base part; And
    상기 웨이퍼의 주변부를 지지하는 접촉 패드부;를 더 포함하는,Further comprising; a contact pad for supporting a peripheral portion of the wafer,
    웨이퍼 이송 장치.Wafer transfer device.
  16. 제15 항에 있어서,The method of claim 15,
    상기 접촉 패드부는 상기 베이스부 상에 형성된 제1 내지 제3 접촉 패드를 포함하고, 상기 제1 내지 제3 접촉 패드는 삼각형 형상으로 배치되는The contact pad part may include first to third contact pads formed on the base part, and the first to third contact pads may be disposed in a triangular shape.
    웨이퍼 이송 장치.Wafer transfer device.
  17. 제16 항에 있어서,The method of claim 16,
    상기 제1 내지 제3 접촉 패드 각각은 상기 웨이퍼의 주변부에 인접하는 상기 웨이퍼의 중심부와 대응되도록 배치되는,Each of the first to third contact pads is disposed to correspond to a central portion of the wafer adjacent to the periphery of the wafer;
    웨이퍼 이송 장치.Wafer transfer device.
PCT/KR2016/004575 2016-02-05 2016-05-02 Wafer alignment apparatus and wafer transfer apparatus WO2017135518A1 (en)

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CN114393468B (en) * 2021-12-29 2023-03-10 江苏威森美微电子有限公司 Edge grinding machine for edge grinding processing of semiconductor wafer
CN116013819A (en) * 2023-02-24 2023-04-25 长春光华微电子设备工程中心有限公司 Information calibration method for TAIKO wafer transmission
CN116013819B (en) * 2023-02-24 2023-07-04 长春光华微电子设备工程中心有限公司 Information calibration method for TAIKO wafer transmission

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