WO2017117835A1 - 液晶显示面板、阵列基板及其制造方法 - Google Patents

液晶显示面板、阵列基板及其制造方法 Download PDF

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Publication number
WO2017117835A1
WO2017117835A1 PCT/CN2016/072667 CN2016072667W WO2017117835A1 WO 2017117835 A1 WO2017117835 A1 WO 2017117835A1 CN 2016072667 W CN2016072667 W CN 2016072667W WO 2017117835 A1 WO2017117835 A1 WO 2017117835A1
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Prior art keywords
color filter
black matrix
drain
substrate
source
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PCT/CN2016/072667
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English (en)
French (fr)
Inventor
郝思坤
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深圳市华星光电技术有限公司
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Priority to US14/913,998 priority Critical patent/US9971221B2/en
Publication of WO2017117835A1 publication Critical patent/WO2017117835A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13396—Spacers having different sizes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to the field of liquid crystal display technology, and in particular to an array substrate, a method of manufacturing the same, and a liquid crystal display panel having the array substrate.
  • PS Photo Spacer
  • Main PS Main Photo Spacer, a main photo spacer or a main column spacer
  • Sub PS Sub Photo Spacer, auxiliary photonic spacer or auxiliary column spacer
  • Main PS and Sub PS are set on the color film substrate and the height of Main PS is greater than the height of Sub PS.
  • the industry usually uses a Gray-tone mask or a Half-tone mask and forms a Main PS and a Sub PS via a mask process, or Two reticles form the Main PS and Sub PS via two masks. Since the liquid crystal display panel also has a large number of other layer structures, how to reduce the type and number of masks used for manufacturing the Main PS and the Sub PS to simplify the process and reduce the production cost has become an urgent problem to be solved in the industry.
  • the present invention provides a liquid crystal display panel, an array substrate, and a method of manufacturing the same, which can reduce the type and number of photomasks used for manufacturing PS, and simplify the process.
  • the invention provides a method for manufacturing an array substrate, comprising: sequentially forming a gate electrode, an insulating layer and an active semiconductor layer on a substrate; forming a source and a drain on the active semiconductor layer; forming a signal on the insulating layer a color filter formed on the source, the drain, and the insulating layer, the color filter includes a first color filter and a second color filter formed by the same photomask, and the first color filter is formed a contact hole having a surface exposing the drain, a second color filter formed on the first color filter and above the source and the drain; a black matrix formed on the color filter, the black matrix including the same a first black matrix and a second black matrix formed by the photomask, the first black matrix being formed in the first color a second black matrix is formed on the second color filter and correspondingly above the drain and/or the source; on the first color filter and in the contact hole, on the filter and correspondingly above the signal line
  • the pixel electrode is formed such that the pixel electrode is electrically
  • the second color filter is formed with a groove exposing the surface of the first color filter for accommodating the photosensitive spacer, and the photosensitive spacer is located on the color filter substrate.
  • the first color filter comprises R, G, B color resists formed by three exposure development and located in the same plane, and the second color filter is formed by one of three exposure developments.
  • the source and the drain are formed by the same mask process as the signal line.
  • An array substrate provided by the present invention comprises: a substrate; a gate electrode, an insulating layer, an active semiconductor layer sequentially formed on the substrate; a source and a drain formed on the active semiconductor layer; and an insulating layer a signal line formed on the source, the drain, and the insulating layer, the color filter includes a first color filter and a second color filter formed by the same mask, the first color The filter is formed with a contact hole exposing a surface of the drain, the second color filter is formed on the first color filter and above the source and the drain; a black matrix formed on the color filter, The black matrix includes a first black matrix formed by the same mask and a second black matrix, the first black matrix is formed on the first color filter and correspondingly located above the signal line, and the second black matrix is formed on the second color filter a pixel electrode is disposed above the drain and/or the source; a pixel electrode is formed on the first color filter and in the contact hole, and the pixel electrode is electrically connected to the drain through the contact hole; wherein
  • the second color filter is formed with a groove exposing the surface of the first color filter for accommodating the photosensitive spacer, and the photosensitive spacer is located on the color filter substrate.
  • the first color filter comprises R, G, B color resists formed by three exposure development and located in the same plane, and the second color filter is formed by one of three exposure developments.
  • the source and the drain are formed by the same mask process as the signal line.
  • a liquid crystal display panel includes a first substrate and a second substrate disposed at a relatively spaced interval, and a liquid crystal filled between the first substrate and the second substrate, wherein one of the first substrate and the second substrate
  • the array substrate includes: a substrate; a gate electrode, an insulating layer, an active semiconductor layer sequentially formed on the substrate; a source and a drain formed on the active semiconductor layer; and is formed on the insulating layer a signal line; a color filter formed on the source, drain, and insulating layers,
  • the color filter includes a first color filter and a second color filter formed by the same photomask, the first color filter is formed with a contact hole exposing a surface of the drain, and the second color filter is formed on the second color filter.
  • a black matrix formed on the color filter the black matrix including a first black matrix and a second black matrix formed by the same mask, the first black The matrix is formed on the first color filter and correspondingly located above the signal line, the second black matrix is formed on the second color filter and correspondingly located above the drain and/or the source; the pixel electrode is formed on the first On a color filter and in the contact hole, the pixel electrode is electrically connected to the drain through the contact hole; wherein the second black matrix and the second color filter form a stud, and the stud is higher than the top surface of the pixel electrode.
  • the other of the first substrate and the second substrate is provided with a photosensitive gap, and the photosensitive gap is accommodated in the groove and the height of the photosensitive spacer is greater than the height of the protruding post.
  • the first color filter comprises R, G, B color resists formed by three exposure development and located in the same plane, and the second color filter is formed by one of three exposure developments.
  • the source and the drain are formed by the same mask process as the signal line.
  • the liquid crystal display panel, the array substrate and the manufacturing method thereof of the present invention form a stud by a mask process of a color filter and a mask process of a black matrix, and the role of PS (Sub PS) is realized by the stud, and is not required to be manufactured.
  • PS Subscribe PS
  • the PS's reticle including grayscale reticle or halftone reticle reduces the type and number of reticle used to make the PS, simplifies the process and reduces production costs.
  • FIG. 1 is a cross-sectional view showing the structure of a liquid crystal display panel according to an embodiment of the present invention
  • FIG. 2 is a schematic flow chart of a method of manufacturing an array substrate according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of a scene for fabricating an array substrate by the method shown in FIG.
  • the liquid crystal display panel 10 includes an array substrate (Array Substrate, also known as a Thin Film Transistor Substrate) 11 and a color filter substrate (Color Filter, CF substrate or color). a filter substrate) 12, and is sandwiched between the array substrate 11 and Liquid crystal (liquid crystal molecules) 13 between the color filter substrates 12, wherein the liquid crystals 13 are located in a liquid crystal cell in which the array substrate 11 and the color filter substrate 12 are superposed.
  • array substrate Array Substrate, also known as a Thin Film Transistor Substrate
  • CF substrate Color Filter, CF substrate or color
  • a filter substrate 12 is sandwiched between the array substrate 11 and Liquid crystal (liquid crystal molecules) 13 between the color filter substrates 12, wherein the liquid crystals 13 are located in a liquid crystal cell in which the array substrate 11 and the color filter substrate 12 are superposed.
  • the array substrate 11 includes a substrate 111, a thin film transistor (TFT) 112 formed on the substrate 111, a signal line 113, a PFA layer (Polytetrafluoro-Ethylene Layer) or a polytetrafluoroethylene layer.
  • the thin film transistor 112 includes a gate electrode 1121, an insulating layer 1122, an active semiconductor layer (AS) 1123, and a source S and a drain formed on the active semiconductor layer 1123, which are sequentially formed on the substrate 111.
  • the insulating layer 1122 is a Gate Insulation Layer (GI);
  • the signal line 113 is formed on the insulating layer 1122, and may be a data line formed by the same mask process as the source S and the drain D, and The data line is spaced apart from the thin film transistor 112 in a horizontal direction;
  • a flat passivation layer 114 is formed on the source S and the drain D, the signal line 113, and the insulating layer 1122, and the flat passivation layer 114 is formed with the exposed drain D.
  • a first contact hole O 1 of the surface a color filter 115 is formed on the flat passivation layer 114, and a second contact hole O 2 communicating with the first contact hole O 1 is formed; the black matrix 116 is formed in the color filter a pixel electrode 117 is formed on the color filter 115 and in the first contact hole O 1 and the second contact hole O 2 , and the pixel electrode 117 can pass through the first contact hole O 1 and the second contact hole O 2
  • the drain D is electrically connected.
  • the color filter 115 includes a first color filter 1151 and a second color filter 1152 formed by the same mask.
  • the first color filter 1151 is located in the effective display area of the pixel in the prior art.
  • the color filter, the first contact hole O 1 is formed in the first color filter 1151, the second color filter 1152 is formed on the first color filter 1151, and the second color filter 1152 is located on the film.
  • the black matrix 116 includes a first black matrix 1161 and a second black matrix 1162 formed by the same reticle, wherein the first black matrix 1161 and the second black matrix 1162 are both black matrices for shading in the prior art, different The maximum height of the second black matrix 1162 is greater than that of the prior art.
  • the first black matrix 1161 is formed on the first color filter 1151 that is not covered by the second color filter 1152 and is located above the signal line 113.
  • the second black matrix 1162 is formed on the second color filter 1152 and correspondingly located above the thin film transistor 112.
  • the second color filter 1152 is formed with the exposed surface of the first color filter 1151 O 3 in the groove, the groove for accommodating the photosensitive O 3 spacer 121 (Main PS) on the color filter substrate 12
  • a portion of the second black matrix 1162 is correspondingly located above the source S, and another portion is located above the drain D.
  • the maximum height of the second black matrix 1162 is greater than that of the prior art: 1.
  • the height of the second black matrix 1162 located above the source S is compared with the prior art.
  • the height of the second black matrix 1162 located above the drain D is greater than that of the prior art; 2.
  • the height of the second black matrix 1162 corresponding to the drain D is the same as that of the prior art, corresponding to the source S.
  • the height of the upper second black matrix 1162 is greater than in the prior art.
  • the second color filter 1152 and the second black matrix 1162 (above the drain D shown in FIG. 1) form a stud P, and the stud P is higher than the top surface of the pixel electrode 117.
  • the pillar P is formed by the mask process of the color filter and the mask process of the black matrix, and the role of the Sub PS is realized by the pillar P, and the mask for manufacturing the Sub PS is not needed, thereby reducing the manufacturing PS.
  • the type and number of reticle used simplifies the process and reduces production costs.
  • the first color filter 1151 includes a three-exposure development and is located on the same plane.
  • the R, G, and B color resists the second color filter 1152 can be formed by one of three exposure developments.
  • the second color filter 1152 is formed by B color resist exposure development, and a photoresist is coated on the flat passivation layer 114, followed by vacuum drying, removing edge photoresist, prebaking and cooling, exposure development, and re-baking.
  • the higher B color resistance includes The first color filter 1151 (below the dotted line in the figure) and the second color filter 1152 (above the dotted line).
  • the liquid crystal display panel 20 is a liquid crystal display panel using a BOA (Black matrix on Array) technology.
  • the color filter 115 is disposed on the array substrate 11
  • the liquid crystal display panel 20 is also a liquid crystal display panel using COA technology.
  • the liquid crystal display panel 20 may be disposed on the substrate 123 of the color filter substrate 12 as shown in the drawing, or the common electrode 122 may be disposed on the array substrate 11, such as the common electrode 122 and the pixel electrode.
  • 117 is alternately arranged on the array substrate 11, and the liquid crystal display panel 20 can be regarded as an IPS (In-Plane Switching) mode.
  • the array substrate 11 also has other structures of the prior art, for example, including The protective layer on the element electrode 117 will not be described here.
  • FIG. 2 is a flow chart showing a method of manufacturing an array substrate according to an embodiment of the present invention for manufacturing the array substrate 11 shown in FIG. 1.
  • the method includes:
  • S21 sequentially forming a gate electrode, an insulating layer, and an active semiconductor layer on the substrate;
  • the substrate 111 is used to form the array substrate 11 of the liquid crystal display panel 10.
  • the substrate 111 may be a glass substrate, a plastic substrate or a flexible substrate.
  • a gate electrode 1121 can be formed on the substrate 111 by, for example, chemical vapor deposition (CVD), vacuum evaporation, plasma enhanced chemical vapor deposition (PECVD), sputtering, or the like.
  • CVD chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • a gate 2111 having a predetermined pattern and an active semiconductor layer 1123 may be formed by having two photomasks, respectively.
  • the source S and the drain D and the signal line 113 may be formed by using the same mask, that is, the source S and the drain D and the signal line 113 are formed by the same mask process.
  • the source S and the drain D and the signal line 113 can also be formed by using different mask processes.
  • a flat passivation layer 114 may be formed on the source S and the drain D, the signal line 113, and the insulating layer 1122.
  • the flat passivation layer 114 is formed with a first contact hole O 1 exposing the surface of the drain.
  • a whole flat passivation layer 114 can be etched by using an etching solution containing phosphoric acid, nitric acid, acetic acid and deionized water to obtain a flat passivation layer 114 having a first contact hole O 1 , of course, Dry etching is used.
  • a color filter 115 is formed on the planarization passivation layer 114, the color filter of the first color filter 115 has a first contact hole 1151 O 1 second contact hole is formed communicating O 2.
  • S34 forming a black matrix on the color filter, the black matrix including a first black matrix and a second black matrix formed by the same photomask, the first black matrix being formed on the first color filter and corresponding to the signal line Upper, a second black matrix is formed on the second color filter and correspondingly located above the drain and/or the source;
  • the step of forming the black matrix 116 may specifically be: forming a full surface light shielding layer on the color filter 115, and then patterning the light shielding layer to form a black matrix 116, and the patterning process may be etching.
  • the black matrix 116 having the structure shown in the figure can be directly formed on the color filter 115 by using a photomask.
  • the array substrate 11 also has other existing structures, for example, a protective layer for insulating the liquid crystal 13, and therefore, after forming the pixel electrode 117, the method further includes forming a protective layer on the pixel electrode 117.

Abstract

一种阵列基板的制造方法，以及采用上述方法制造的阵列基板和液晶显示面板。通过彩色滤光片（115）的光罩制程以及黑矩阵（116）的光罩制程形成凸柱（P），由凸柱（P）实现Sub PS的作用，无需用以制造Sub PS的光罩(包括灰阶光罩和半色调光罩)，从而减少制造PS所使用的光罩的类型及数量，简化制程并降低生产成本。

Description

液晶显示面板、阵列基板及其制造方法 【技术领域】
本发明涉及液晶显示技术领域，具体而言涉及一种阵列基板及其制造方法和具有该阵列基板的液晶显示面板。
【背景技术】
PS(Photo Spacer，感光间隙子)用于支撑并保持液晶显示面板的液晶盒的间隙(Cell-gap)均匀。基于COA(Color Filter on Array，将彩色滤光整合于阵列基板上)技术的液晶显示面板，其PS包括Main PS(Main Photo Spacer，主要感光间隙子或主要柱状隔垫物)和Sub PS(Sub Photo Spacer，辅助感光间隙子或辅助柱状隔垫物)，Main PS和Sub PS均设置于彩膜基板上且Main PS的高度大于Sub PS的高度。
为了实现Main PS和Sub PS的高度差，业界通常采用半色调光罩(Gray-tone mask)或灰阶光罩(Half-tone mask)并经由一道光罩制程形成Main PS和Sub PS，或者采用两个光罩并经由两道光罩形成Main PS和Sub PS。由于液晶显示面板还具有较多数量的其他层结构，如何减少制造Main PS和Sub PS所使用的光罩的类型及数量以简化制程并降低生产成本，已成为业界当前迫切需要解决的问题。
【发明内容】
鉴于此，本发明提供一种液晶显示面板、阵列基板及其制造方法，能够减少制造PS所使用的光罩的类型及数量，简化制程。
本发明提供的一种阵列基板的制造方法，包括：在基材上依次形成栅极、绝缘层、有源半导体层；在有源半导体层上形成源极和漏极；在绝缘层上形成信号线；在源极、漏极和绝缘层上形成彩色滤光片，彩色滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，第一彩色滤光片形成有暴露漏极的表面的接触孔，第二彩色滤光片形成于第一彩色滤光片上且位于源极和漏极的上方；在彩色滤光片上形成黑矩阵，黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，第一黑矩阵形成于第一彩色 滤光片上且对应位于信号线的上方，第二黑矩阵形成于第二彩色滤光片上且对应位于漏极和/或源极的上方；在第一彩色滤光片上以及接触孔内形成像素电极，以使像素电极通过接触孔与漏极电连接；其中，第二黑矩阵和第二彩色滤光片形成凸柱，且凸柱高出像素电极的顶面。
其中，第二彩色滤光片形成有暴露第一彩色滤光片表面的沟槽，用于容置感光间隙子，感光间隙子位于彩膜基板上。
其中，第一彩色滤光片包括由三次曝光显影形成且位于同一平面的R、G、B色阻，第二彩色滤光片由三次曝光显影中的一次形成。
其中，源极和漏极与信号线经同一光罩制程形成。
本发明提供的一种阵列基板，包括：基材；依次形成于基材上的栅极、绝缘层、有源半导体层；形成于有源半导体层上的源极和漏极；形成于绝缘层上的信号线；形成于源极、漏极和绝缘层上的彩色滤光片，彩色滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，第一彩色滤光片形成有暴露漏极的表面的接触孔，第二彩色滤光片形成于第一彩色滤光片上且位于源极和漏极的上方；形成于彩色滤光片上的黑矩阵，黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，第一黑矩阵形成于第一彩色滤光片上且对应位于信号线的上方，第二黑矩阵形成于第二彩色滤光片上且对应位于漏极和/或源极的上方；像素电极，形成于第一彩色滤光片上以及接触孔内，像素电极通过接触孔与漏极电连接；其中，第二黑矩阵和第二彩色滤光片形成凸柱，且凸柱高出像素电极的顶面。
其中，第二彩色滤光片形成有暴露第一彩色滤光片的表面的沟槽，用于容置感光间隙子，感光间隙子位于彩膜基板上。
其中，第一彩色滤光片包括由三次曝光显影形成且位于同一平面的R、G、B色阻，第二彩色滤光片由三次曝光显影中的一次形成。
其中，源极和漏极与信号线经同一光罩制程形成。
本发明提供的一种液晶显示面板，包括相对间隔设置的第一基板和第二基板，以及填充于第一基板和第二基板之间的液晶，其中，第一基板和第二基板中的一者为阵列基板，该阵列基板包括：基材；依次形成于基材上的栅极、绝缘层、有源半导体层；形成于有源半导体层上的源极和漏极；形成于绝缘层上的信号线；形成于源极、漏极和绝缘层上的彩色滤光片， 彩色滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，第一彩色滤光片形成有暴露漏极的表面的接触孔，第二彩色滤光片形成于第一彩色滤光片上且位于源极和漏极的上方；形成于彩色滤光片上的黑矩阵，黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，第一黑矩阵形成于第一彩色滤光片上且对应位于信号线的上方，第二黑矩阵形成于第二彩色滤光片上且对应位于漏极和/或源极的上方；像素电极，形成于第一彩色滤光片上以及接触孔内，像素电极通过接触孔与漏极电连接；其中，第二黑矩阵和第二彩色滤光片形成凸柱，且凸柱高出像素电极的顶面。
其中，第一基板和第二基板中的另一者设置有感光间隙子，感光间隙子容置于沟槽中且感光间隙子的高度大于凸柱的高度。
其中，第一彩色滤光片包括由三次曝光显影形成且位于同一平面的R、G、B色阻，第二彩色滤光片由三次曝光显影中的一次形成。
其中，源极和漏极与信号线经同一光罩制程形成。
本发明的液晶显示面板、阵列基板及其制造方法，通过彩色滤光片的光罩制程和黑矩阵的光罩制程形成凸柱，由凸柱实现PS(Sub PS)的作用，无需用以制造该PS的光罩(包括灰阶光罩或半色调光罩)，从而减少制造PS所使用的光罩的类型及数量，简化制程并降低生产成本。
【附图说明】
图1是本发明一实施例的液晶显示面板的结构剖视图；
图2是本发明一实施例的阵列基板的制造方法的流程示意图；
图3是采用图2所示方法制造阵列基板的场景示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明所提供的示例性的实施例的技术方案进行清楚、完整地描述。
图1是本发明一实施例的液晶显示面板的结构剖视图。如图1所示，所述液晶显示面板10包括相对间隔设置的阵列基板(Array Substrate，又称Thin Film Transistor Substrate，TFT基板或薄膜晶体管基板)11和彩膜基板(Color Filter，CF基板或彩色滤光片基板)12，以及夹持于阵列基板11和 彩膜基板12之间的液晶(液晶分子)13，其中，液晶13位于阵列基板11和彩膜基板12叠加组合成的液晶盒内。
阵列基板11包括基材111以及形成于基材111上的薄膜晶体管(Thin Film Transistor，TFT)112、信号线113、PFA层(Polytetrafluoro-Ethylene Layer，平坦钝化层或聚四氟乙烯层)114、彩色滤光片115、黑矩阵116以及像素电极117。其中，薄膜晶体管112包括依次形成于基材111上的栅极1121、绝缘层1122、有源半导体层(Active Semiconductor Layer，AS)1123以及形成于有源半导体层1123上的源极S和漏极D，绝缘层1122即为栅极绝缘层(Gate Insulation Layer，GI)；信号线113形成于绝缘层1122上，可以为与源极S和漏极D经由同一光罩制程形成的数据线，且该数据线与薄膜晶体管112在水平方向上间隔设置；平坦钝化层114形成于源极S和漏极D、信号线113和绝缘层1122上，平坦钝化层114形成有暴露漏极D的表面的第一接触孔O1；彩色滤光片115形成于平坦钝化层114上，且形成有与第一接触孔O1相通的第二接触孔O2；黑矩阵116形成于彩色滤光片115上；像素电极117形成于彩色滤光片115上以及第一接触孔O1和第二接触孔O2内，像素电极117可以通过第一接触孔O1和第二接触孔O2与漏极D电连接。
与现有技术不同的是，在本发明实施例中：
彩色滤光片115包括由同一光罩形成的第一彩色滤光片1151和第二彩色滤光片1152，其中，第一彩色滤光片1151即为现有技术中位于像素的有效显示区内的彩色滤光片，第一接触孔O1形成于第一彩色滤光片1151中，第二彩色滤光片1152形成于第一彩色滤光片1151上且第二彩色滤光片1152位于薄膜晶体管112的上方；
黑矩阵116包括由同一光罩形成的第一黑矩阵1161和第二黑矩阵1162，其中，第一黑矩阵1161和第二黑矩阵1162均为现有技术中用于遮光的黑矩阵，不同的是第二黑矩阵1162的最大高度大于现有技术的，第一黑矩阵1161形成于未被第二彩色滤光片1152覆盖的第一彩色滤光片1151上且对应位于信号线113的上方，第二黑矩阵1162形成于第二彩色滤光片1152上且对应位于薄膜晶体管112的上方。
其中，第二彩色滤光片1152形成有暴露第一彩色滤光片1151表面的 沟槽O3，该沟槽O3用于容置位于彩膜基板12上的感光间隙子121(Main PS)，第二黑矩阵1162的一部分对应位于源极S的上方，另一部分对应位于漏极D的上方。基于此，第二黑矩阵1162的最大高度大于现有技术的指的是：一、在图1所示实施例中，对应位于源极S上方的第二黑矩阵1162的高度与现有技术的相同，对应位于漏极D上方的第二黑矩阵1162的高度大于现有技术的；二、对应位于漏极D上方的第二黑矩阵1162的高度与现有技术的相同，对应位于源极S上方的第二黑矩阵1162的高度大于现有技术的。
其中，第二彩色滤光片1152和(图1所示位于漏极D上方的)第二黑矩阵1162形成凸柱P，且凸柱P高出像素电极117的顶面。可见，本实施例通过彩色滤光片的光罩制程和黑矩阵的光罩制程形成凸柱P，由凸柱P实现Sub PS的作用，无需用以制造Sub PS的光罩，从而减少制造PS所使用的光罩的类型及数量，简化制程并降低生产成本。
对于由R(Red，红)、G(Green，绿)、B(Blue，蓝)色阻形成的彩色滤光片115，第一彩色滤光片1151包括由三次曝光显影形成且位于同一平面的R、G、B色阻，第二彩色滤光片1152可以由三次曝光显影中的一次形成。以第二彩色滤光片1152由B色阻曝光显影形成为例，在平坦钝化层114上涂布光阻，而后真空干燥、去掉边缘光阻、预烘烤与冷却、曝光显影以及再次烘烤，从而在对应于薄膜晶体管112的上方形成高度较高的B色阻，并在其余部分的平坦钝化层114上形成高度较低的B色阻，其中高度较高的B色阻即包括第一彩色滤光片1151(图示虚线以下)和第二彩色滤光片1152(图示虚线以上)。
由于黑矩阵116设置于阵列基板11上，因此所述液晶显示面板20为采用BOA(Black matrix on Array，将黑矩阵整合于阵列基板上)技术的液晶显示面板。另外，由于彩色滤光片115设置于阵列基板11上，因此所述液晶显示面板20还为采用COA技术的液晶显示面板。需要指出的是，液晶显示面板20可以如图所示将公共电极122设置于彩膜基板12的基材123上，也可以将公共电极122设置于阵列基板11上，例如公共电极122与像素电极117在阵列基板11上交替排布，此时液晶显示面板20可视为IPS(In-Plane Switching，横向电场效应显示)模式。
当然，阵列基板11还具有现有技术的其他结构，例如还包括形成于像 素电极117上的保护层，此处不予赘述。
图2是本发明一实施例的阵列基板的制造方法的流程示意图，用于制造图1所示阵列基板11。结合图1-图3所示，所述方法包括：
S21：在基材上依次形成栅极、绝缘层、有源半导体层；
如图3所示，基材111用于形成液晶显示面板10的阵列基板11，所述基材111可为玻璃基体、塑料基体或可挠式基体。
本发明实施例可采用例如化学气相沉积(Chemical vapor deposition，CVD)、真空蒸镀、等离子化学气相沉积(Plasma Enhanced Chemical vapor deposition，PECVD)、溅射等方法在基材111上形成栅极1121、绝缘层1122、有源半导体层1123。在其他实施例中，可采用具有两个光罩分别形成具有预定图案的栅极2111和有源半导体层1123。
S32：在有源半导体层上形成源极和漏极、在绝缘层上形成信号线；
参阅图3所示，可采用同一光罩形成源极S和漏极D以及信号线113，即源极S和漏极D与信号线113经同一光罩制程形成。当然，也可以采用不同光罩制程形成源极S和漏极D以及信号线113。
S33：在源极、漏极和绝缘层上形成彩色滤光片，彩色滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，第一彩色滤光片形成有暴露漏极的表面的接触孔，第二彩色滤光片形成于第一彩色滤光片上且位于源极和漏极的上方；
本发明实施例可以先在源极S和漏极D、信号线113和绝缘层1122上形成平坦钝化层114，平坦钝化层114形成有暴露漏极的表面的第一接触孔O1。其中，可以利用包含有磷酸、硝酸、醋酸以及去离子水的蚀刻液对一整片的平坦钝化层114进行蚀刻，从而得到具有第一接触孔O1的平坦钝化层114，当然也可以采用干法蚀刻。而后，在平坦钝化层114上形成彩色滤光片115，该彩色滤光片115的第一彩色滤光片1151形成有与第一接触孔O1相通的第二接触孔O2。
S34：在彩色滤光片上形成黑矩阵，黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，第一黑矩阵形成于第一彩色滤光片上且对应位于信号线的上方，第二黑矩阵形成于第二彩色滤光片上且对应位于漏极和/或源极的上方；
其中，形成黑矩阵116的步骤具体可以为：在彩色滤光片115上形成一整面的遮光层，而后对遮光层进行图案化制程以形成黑矩阵116，该图案化制程可以为刻蚀。本发明实施例还可以采用光罩在彩色滤光片115上直接形成具有图所示结构的黑矩阵116。
S35：在第一彩色滤光片上以及接触孔内形成像素电极，以使像素电极通过接触孔与漏极电连接，其中，第一黑矩阵和第二彩色滤光片形成凸柱，且凸柱高出像素电极的顶面。
当然，阵列基板11还具有现有的其他结构，例如还包括用于隔绝液晶13的保护层，因此，在形成像素电极117之后，所述方法还包括：在像素电极117上形成保护层。
应理解，以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (12)

  1. 一种阵列基板的制造方法，其中，所述方法包括：
    在基材上依次形成栅极、绝缘层、有源半导体层；
    在所述有源半导体层上形成源极和漏极；
    在所述绝缘层上形成信号线；
    在所述源极、所述漏极和所述绝缘层上形成彩色滤光片，所述彩色滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，所述第一彩色滤光片形成有暴露所述漏极的表面的接触孔，第二彩色滤光片形成于所述第一彩色滤光片上且位于所述源极和漏极的上方；
    在所述彩色滤光片上形成黑矩阵，所述黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，所述第一黑矩阵形成于所述第一彩色滤光片上且对应位于所述信号线的上方，所述第二黑矩阵形成于所述第二彩色滤光片上且对应位于所述漏极和/或所述源极的上方；
    在所述第一彩色滤光片上以及所述接触孔内形成像素电极，以使所述像素电极通过所述接触孔与所述漏极电连接；
    其中，所述第二黑矩阵和所述第二彩色滤光片形成凸柱，且所述凸柱高出所述像素电极的顶面。
  2. 根据权利要求1所述的方法，其中，所述第二彩色滤光片形成有暴露所述第一彩色滤光片的表面的沟槽，用于容置感光间隙子，所述感光间隙子位于与所述阵列基板相对间隔的彩膜基板上。
  3. 根据权利要求1所述的方法，其中，所述第一彩色滤光片包括由三次曝光显影形成且位于同一平面的R、G、B色阻，所述第二彩色滤光片由三次所述曝光显影中的一次形成。
  4. 根据权利要求1所述的方法，其中，所述源极和所述漏极与所述信号线经同一光罩制程形成。
  5. 一种阵列基板，其中，所述阵列基板包括：
    基材；
    依次形成于所述基材上的栅极、绝缘层、有源半导体层；
    形成于所述有源半导体层上的源极和漏极；
    形成于所述绝缘层上的信号线；
    形成于所述源极、所述漏极和所述绝缘层上的彩色滤光片，所述彩色滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，所述第一彩色滤光片形成有暴露所述漏极的表面的接触孔，第二彩色滤光片形成于所述第一彩色滤光片上且位于所述源极和漏极的上方；
    形成于所述彩色滤光片上的黑矩阵，所述黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，所述第一黑矩阵形成于所述第一彩色滤光片上且对应位于所述信号线的上方，所述第二黑矩阵形成于所述第二彩色滤光片上且对应位于所述漏极和/或所述源极的上方；
    像素电极，形成于所述第一彩色滤光片上以及所述接触孔内，所述像素电极通过所述接触孔与所述漏极电连接；
    其中，所述第二黑矩阵和所述第二彩色滤光片形成凸柱，且所述凸柱高出所述像素电极的顶面。
  6. 根据权利要求5所述的阵列基板，其中，所述第二彩色滤光片形成有暴露所述第一彩色滤光片的表面的沟槽，用于容置感光间隙子，所述感光间隙子位于与所述阵列基板相对间隔的彩膜基板上。
  7. 根据权利要求5所述的阵列基板，其中，所述第一彩色滤光片包括由三次曝光显影形成且位于同一平面的R、G、B色阻，所述第二彩色滤光片由三次所述曝光显影中的一次形成。
  8. 根据权利要求5所述的阵列基板，其中，所述源极和所述漏极与所述信号线经同一光罩制程形成。
  9. 一种液晶显示面板，其中，所述液晶显示面板包括相对间隔设置的第一基板和第二基板，以及填充于所述第一基板和所述第二基板之间的液晶，其中，所述第一基板和所述第二基板中的一者为阵列基板，所述阵列基板包括：
    基材；
    依次形成于所述基材上的栅极、绝缘层、有源半导体层；
    形成于所述有源半导体层上的源极和漏极；
    形成于所述绝缘层上的信号线；
    形成于所述源极、所述漏极和所述绝缘层上的彩色滤光片，所述彩色 滤光片包括由同一光罩形成的第一彩色滤光片和第二彩色滤光片，所述第一彩色滤光片形成有暴露所述漏极的表面的接触孔，第二彩色滤光片形成于所述第一彩色滤光片上且位于所述源极和漏极的上方；
    形成于所述彩色滤光片上的黑矩阵，所述黑矩阵包括由同一光罩形成的第一黑矩阵和第二黑矩阵，所述第一黑矩阵形成于所述第一彩色滤光片上且对应位于所述信号线的上方，所述第二黑矩阵形成于所述第二彩色滤光片上且对应位于所述漏极和/或所述源极的上方；
    像素电极，形成于所述第一彩色滤光片上以及所述接触孔内，所述像素电极通过所述接触孔与所述漏极电连接；
    其中，所述第二黑矩阵和所述第二彩色滤光片形成凸柱，且所述凸柱高出所述像素电极的顶面。
  10. 根据权利要求9所述的液晶显示面板，其中，所述第一基板和所述第二基板中的另一者设置有感光间隙子，所述感光间隙子容置于所述沟槽中且所述感光间隙子的高度大于所述凸柱的高度。
  11. 根据权利要求9所述的液晶显示面板，其中，所述第一彩色滤光片包括由三次曝光显影形成且位于同一平面的R、G、B色阻，所述第二彩色滤光片由三次所述曝光显影中的一次形成。
  12. 根据权利要求9所述的液晶显示面板，其中，所述源极和所述漏极与所述信号线经同一光罩制程形成。
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