WO2017110660A1 - 基板保持部材 - Google Patents
基板保持部材 Download PDFInfo
- Publication number
- WO2017110660A1 WO2017110660A1 PCT/JP2016/087461 JP2016087461W WO2017110660A1 WO 2017110660 A1 WO2017110660 A1 WO 2017110660A1 JP 2016087461 W JP2016087461 W JP 2016087461W WO 2017110660 A1 WO2017110660 A1 WO 2017110660A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- protective layer
- base
- holding member
- substrate holding
- end surface
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
Definitions
- the present invention relates to a substrate holding member used for adsorbing and holding a substrate such as a semiconductor wafer.
- a substrate holding member having a plurality of protrusions formed on the surface of a base is used as a member for holding a wafer during exposure.
- a substrate holding member is required to have extremely high flatness and conductivity in order to prevent circuit destruction due to static electricity. Therefore, a material having conductivity and high rigidity such as silicon carbide (hereinafter also referred to as “SiC”) is used.
- SiC sintered body a silicon carbide sintered body
- SiC film (protective layer) is coated on the protrusion made of the SiC sintered body in order to suppress wear due to contact with the wafer, and surface processing is performed by blasting or polishing after coating.
- Such SiC coating is applied to the entire surface of the substrate holding member (see, for example, Patent Documents 1 and 2).
- An exposure process apparatus for producing a semiconductor manufacturing process, particularly a circuit pattern, has a large demand for particle suppression. Therefore, it is required that particles are not generated from the substrate holding member.
- the present invention has been made in view of the above-described conventional problems, and an object of the present invention is to prevent peeling or cracking of a protective layer formed on a protrusion in a substrate holding member including a plurality of protrusions formed on the surface of a base.
- An object of the present invention is to provide a substrate holding member that can suppress the particles caused by it.
- the substrate holding member according to the first aspect of the present invention is a substrate holding member comprising a base and a plurality of protrusions formed on the surface of the base, wherein the protrusion has a flat upper end surface.
- the substrate holding member according to the second aspect of the present invention is a substrate holding member comprising a base and a plurality of protrusions formed on the surface of the base, wherein the protrusion has a flat upper end surface.
- a base composed of a silicon carbide sintered body and a protection comprising at least one selected from silicon carbide, diamond-like carbon, TiN, TiC, TiCN, TiAlN, TiO 2 , CrN, Y 2 O 3 and Al 2 O 3
- the protective layer has a region exposed over the entire circumference in at least a part from the edge portion to the lower end of the upper end surface of the base portion.
- the substrate holding member of the present invention has a plurality of protrusions formed on the surface of the base body, the protective layer formed on the surface of the base portion made of a silicon carbide sintered body, from the edge portion to the lower end portion of the upper end surface of the base portion. A part of which is exposed over the entire circumference. That is, the protective layer is divided at a part from the edge portion to the lower end of the upper end surface of the base portion.
- the protective layer is formed so as to cover only at least a part of the upper portion including the upper end surface of the base portion.
- the contact area of a base and a protective layer can be made smaller, and the said effect can be exhibited efficiently.
- the protective layer material itself is small, and particles resulting therefrom can be further suppressed.
- the protective layer may be formed so as to cover only the upper end surface of the base portion, or may be formed so as to cover the upper end surface of the base portion and to cover a part of the side surface continuous with the upper end surface. You can also
- the substrate holding member of the present invention is a substrate holding member comprising a base and a plurality of protrusions formed on the surface of the base, and the protrusion has a silicon carbide-based firing having a flat upper end surface. Characterized in that it has a base portion comprising a ligation and a protective layer, and the protective layer has a region exposed over the entire circumference in at least a part from the edge portion to the lower end of the upper end surface of the base portion. To do. *
- FIG. 1 is a perspective view of an embodiment of a substrate holding member of the present invention.
- a substrate holding member 1 shown in FIG. 1 has a disk-shaped base 10 made of a silicon carbide sintered body and a plurality of protrusions 20 formed on the surface of the base 10. *
- FIG. 2 is a cross-sectional view showing only one of the plurality of protrusions 20 formed on the surface of the substrate 10.
- the protrusion 20 shown in FIG. 2 includes a base portion 22 made of a silicon carbide sintered body and a protective layer 24.
- the base 22 includes a cylindrical lower base 22A and a cylindrical upper base 22B that protrudes above the lower base 22A and has a smaller diameter than the lower base 22A.
- the upper end surface of the upper base 22B is formed flat.
- the protrusions 20 are exaggerated without considering the actual shape and dimensional ratio. Therefore, the actual shape and dimensional ratio of the protrusions do not necessarily match. The same applies to FIGS. 3 to 6 described later. *
- a protective layer 24 is formed on the entire upper end surface of the base 22 (upper base 22B) for the purpose of suppressing wear and the like due to contact with the wafer.
- the protective layer 24 is made of at least one selected from silicon carbide, diamond-like carbon, TiN, TiC, TiCN, TiAlN, TiO 2 , CrN, Y 2 O 3 and Al 2 O 3 .
- the protective layer 24 is formed only on the entire upper end surface of the base portion 22, and is not formed on the side surfaces of the base portion 22 and the surface of the base 10 (portions where the protrusions 20 are not formed).
- the protective layer 24 is formed only on the upper end surface of the base portion 22, as described above, the protective layer is less likely to be peeled off or cracked than when the protective layer is formed on the entire surface of the substrate holding member. Particles resulting from the can be suppressed.
- the protective layer 24 in the protrusion 20 shown in FIG. 2 is formed only on the entire upper end surface.
- the protective layer 24 covers the upper end surface of the base portion 22 and is one of the side surfaces connected to the upper end surface as shown in FIG. It is preferable to form so that a part may be covered over a perimeter.
- the protective layer 24 formed on the upper end face receives stress due to physical contact with the substrate.
- the contact area with the base 22 is increased, and the effect of preventing the protective layer 24 from peeling can be further increased. *
- the protective layer 24 is formed so as to cover only at least a part of the upper portion including the upper end surface of the base portion 22.
- the “upper part” means being located above the middle part between the upper end and the lower end.
- the “upper part” preferably has a height of 1 to 100 ⁇ m, more preferably a height of 5 to 30 ⁇ m, with the apex of the protrusion 20 as a reference.
- the protrusion 20 formed on the surface of the base body 10 has a cylindrical shape having an upper base portion and a lower base portion having different diameters.
- the present invention is not limited to this shape.
- the base can be formed into a truncated cone shape. 4 and 5, the same reference numerals are given to substantially the same components as those in FIG. 2.
- the protective layer is formed so as to cover only a part of the upper portion including the upper end surface of the base portion, so that the effect of the present invention can be exhibited. *
- the protective layer is formed so as to cover only a part of the upper part including the upper end surface of the base, but theoretically, the protective layer is shown in FIG. As shown, it is only necessary to have a region that is exposed over the entire circumference in a part from the edge to the lower end of the upper end surface of the base 22.
- FIG. 6 components that are substantially the same as those in FIG. 2 are given the same reference numerals.
- the above substrate holding member of the present invention can be manufactured, for example, as follows. *
- a substantially disk-shaped molded body made of silicon carbide is produced, and this molded body is sintered in an Ar gas atmosphere at 1900 to 2100 [° C.] to produce a substantially disk-shaped silicon carbide sintered body.
- a plurality of base portions 22 are formed by subjecting the upper surface of the silicon carbide sintered body to grinding, sandblasting, electric discharge machining, or the like.
- the protective layer 24 made of silicon carbide is applied to the substrate 10 according to chemical vapor deposition (CVD), physical vapor deposition (PVD), plating, vapor deposition, plasma ion implantation, or ion plating. Are formed so as to cover the upper surface and the surface of the base 22.
- the protective layer 24 is preferably formed of PVD, which has a relatively low film forming process temperature and suppresses deformation of the base portion 22 due to heat.
- the protective layer 24 thus formed is in a state of covering the entire upper surface of the base 10 and the surface of the base 22.
- the protective layer 24 is (1) the state formed only on the entire upper end surface of the base, or (2) the state extended to the middle of the entire upper end surface of the base and the side surface connected to the upper end surface. Therefore, regions other than the region corresponding to (1) or (2) are removed by blasting or the like. Further, the protective layer 24 is polished so that at least the top surface of the protrusion 20 is flat.
- a substrate which is a flat object to be adsorbed such as a semiconductor wafer is supported by the substrate holding member 1 so as to come into contact with each of the plurality of protrusions 20.
- a vacuum suction device such as a vacuum pump connected to the vacuum suction path formed in the substrate 10
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (5)
- 基体と、前記基体の表面に形成されている複数の突起とを備える基板保持部材であって、 前記突起は、上端面が平坦に形成された、炭化珪素質焼結体からなる基部と、炭化珪素からなる保護層とを有し、 前記保護層は、前記基部の上端面の縁部から下端までの少なくとも一部において、全周にわたり露出している領域を有することを特徴とする基板保持部材。
- 請求項1に記載の基板保持部材において、前記保護層は、前記基部の上端面を含む上部の少なくとも一部のみを覆うように形成されていることを特徴とする基板保持部材。
- 請求項2に記載の基板保持部材において、前記保護層は、前記基部の上端面のみを覆うように形成されていることを特徴とする基板保持部材。
- 請求項2に記載の基板保持部材において、前記保護層は、前記基部の上端面を覆い、かつ上端面に連なる側面の一部を全周にわたり覆うように形成されていることを特徴とする基板保持部材。
- 基体と、前記基体の表面に形成されている複数の突起とを備える基板保持部材であって、 前記突起は、上端面が平坦に形成された、炭化珪素質焼結体からなる基部と、炭化珪素、ダイヤモンドライクカーボン、TiN、TiC、TiCN、TiAlN、TiO2、CrN、Y2O3およびAl2O3から選択される少なくとも1種からなる保護層とを有し、 前記保護層は、前記基部の上端面の縁部から下端までの少なくとも一部において、全周にわたり露出している領域を有することを特徴とする基板保持部材。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177033307A KR102071120B1 (ko) | 2015-12-25 | 2016-12-16 | 기판유지부재 |
US15/574,204 US10468289B2 (en) | 2015-12-25 | 2016-12-16 | Substrate holding member |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-254670 | 2015-12-25 | ||
JP2015254670 | 2015-12-25 | ||
JP2016236982A JP6867149B2 (ja) | 2015-12-25 | 2016-12-06 | 基板保持部材 |
JP2016-236982 | 2016-12-06 |
Publications (1)
Publication Number | Publication Date |
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WO2017110660A1 true WO2017110660A1 (ja) | 2017-06-29 |
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ID=59090285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2016/087461 WO2017110660A1 (ja) | 2015-12-25 | 2016-12-16 | 基板保持部材 |
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WO (1) | WO2017110660A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021507302A (ja) * | 2017-12-20 | 2021-02-22 | エーエスエムエル ホールディング エヌ.ブイ. | 定められたバールトップトポグラフィを有するリソグラフィサポート |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05205997A (ja) * | 1992-01-29 | 1993-08-13 | Canon Inc | 基板保持盤 |
JP2005310933A (ja) * | 2004-04-20 | 2005-11-04 | Nikon Corp | 基板保持部材、露光装置及びデバイス製造方法 |
JP2008218802A (ja) * | 2007-03-06 | 2008-09-18 | Tokyo Electron Ltd | 基板載置台及び基板処理装置 |
JP2009054723A (ja) * | 2007-08-24 | 2009-03-12 | Kyocera Corp | 吸着部材、吸着装置および吸着方法 |
-
2016
- 2016-12-16 WO PCT/JP2016/087461 patent/WO2017110660A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05205997A (ja) * | 1992-01-29 | 1993-08-13 | Canon Inc | 基板保持盤 |
JP2005310933A (ja) * | 2004-04-20 | 2005-11-04 | Nikon Corp | 基板保持部材、露光装置及びデバイス製造方法 |
JP2008218802A (ja) * | 2007-03-06 | 2008-09-18 | Tokyo Electron Ltd | 基板載置台及び基板処理装置 |
JP2009054723A (ja) * | 2007-08-24 | 2009-03-12 | Kyocera Corp | 吸着部材、吸着装置および吸着方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021507302A (ja) * | 2017-12-20 | 2021-02-22 | エーエスエムエル ホールディング エヌ.ブイ. | 定められたバールトップトポグラフィを有するリソグラフィサポート |
JP7167158B2 (ja) | 2017-12-20 | 2022-11-08 | エーエスエムエル ホールディング エヌ.ブイ. | 定められたバールトップトポグラフィを有するリソグラフィサポート |
US11520241B2 (en) | 2017-12-20 | 2022-12-06 | Asml Holding N.V. | Lithography supports with defined burltop topography |
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