WO2017107776A1 - 一种高效led智能光源 - Google Patents

一种高效led智能光源 Download PDF

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Publication number
WO2017107776A1
WO2017107776A1 PCT/CN2016/108993 CN2016108993W WO2017107776A1 WO 2017107776 A1 WO2017107776 A1 WO 2017107776A1 CN 2016108993 W CN2016108993 W CN 2016108993W WO 2017107776 A1 WO2017107776 A1 WO 2017107776A1
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chip unit
light source
bare chip
light
fluorescent layer
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PCT/CN2016/108993
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English (en)
French (fr)
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张伟
肖亮
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广州市添鑫光电有限公司
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Priority to EP16877587.2A priority Critical patent/EP3358241A4/en
Priority to JP2018522619A priority patent/JP2018535552A/ja
Priority to US15/771,089 priority patent/US20180315902A1/en
Publication of WO2017107776A1 publication Critical patent/WO2017107776A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • the invention relates to the technical field of high-power LED devices, in particular to a high-efficiency LED intelligent light source.
  • the existing color-modulated high-power LED light source is formed on one side of the substrate by a color temperature, and the other color temperature is made on the other side of the substrate (as shown in FIG. 1), or is made in a circular shape, and the inner circle is made into a kind. Color temperature, the outer circle makes another color temperature, and the middle retains two different color temperature zones through the building retaining wall (Fig. 2). This method requires separate construction of a retaining wall to complete the subsequent separation of different color temperatures.
  • the object of the present invention is to provide a high-efficiency LED intelligent light source, which has good light color consistency, uniform light, enhanced color continuity after color mixing, and solves the phenomenon of merging of mixed light zones, and the LED light source of the whole package is airtight. High reliability, high light color quality and easy production.
  • the present invention provides a high-efficiency LED intelligent light source, comprising a package substrate and a chip unit disposed on the package substrate, the chip unit being divided into at least one bare chip unit and at least one surface covered on the bare chip unit A packaged chip unit formed by a first fluorescent layer, wherein the bare chip unit and the packaged chip unit have different color temperatures, and a second fluorescent layer is further disposed to cover the bare chip unit and the package chip unit.
  • the color temperature of the wrapped chip unit is one, and the bare chip unit and the package chip unit are evenly distributed.
  • the packaged chip unit has at least two color temperatures, and each of the color temperature packaged chip units and the bare chip unit are evenly distributed.
  • the bare chip unit is composed of at least one blue chip.
  • the first fluorescent layer is a transition phosphor.
  • the second fluorescent layer is a package fluorescent glue.
  • the beneficial effects of the high-efficiency LED intelligent light source of the present invention are as follows:
  • an LED light source formed by integrally wrapping a packaged chip unit formed by covering a first fluorescent layer with a bare chip unit having an initial color temperature through a second fluorescent layer, wherein the overall light output is on the same plane, and the light color consistency is good.
  • the scale production makes the high-efficiency LED intelligent light source widely used in various indoor and outdoor intelligent lamps, and can form a gradual effect when a plurality of different LED light sources are installed together.
  • FIG. 1 is a schematic diagram of a solution of a high power LED light source in the prior art.
  • FIG. 2 is a schematic diagram of another scheme of a high power LED light source in the prior art.
  • FIG. 3 is a top plan view of a high efficiency LED smart light source of the present invention.
  • Figure 4 is a front elevational view of the high efficiency LED smart light source of the present invention.
  • the high-efficiency LED intelligent light source includes a package substrate 1 and a chip unit 2 disposed on the package substrate 1.
  • the chip unit 2 is divided into a plurality of bare chip units 21 and a plurality of wrapped chip units 22 formed by covering a surface of the bare chip unit 21 with a first fluorescent layer a, each of the bare chips
  • the unit 21 is composed of at least one chip, which is usually a blue chip or a violet chip. More specifically, the color temperature of each of the bare chip units 21 is the same, the color temperature of each of the packaged chip units 22 is the same, and the wrapped chip unit 22 is different from the color temperature of the bare chip unit 21 due to the action of the first fluorescent layer a.
  • the surface of the plurality of bare chip units 21 and the surface of the plurality of packaged chip units 22 are entirely covered with a second fluorescent layer b, thereby passing a color temperature bare chip unit 21 through the second fluorescent layer b.
  • Covering can obtain a white color temperature
  • another color temperature of the wrapped chip unit 22 can be obtained by covering the second fluorescent layer b to obtain another white color temperature, and the color temperature can be made to the respective requirements of the requirement at one time.
  • Intelligent adjustment of the light source The plurality of bare chip units 21 and the plurality of wrapped chip units 22 The same quantity can also be different but evenly distributed, so that the light color can be initially achieved.
  • the high-efficiency LED intelligent light source can be widely used in various indoor and outdoor intelligent lamps. More specifically, the first fluorescent layer a is a transition phosphor, and the second fluorescent layer b is a package fluorescent glue for packaging purposes. More specifically, the packaged chip unit 22 and the bare chip unit 21 can be individually controlled to illuminate, that is, only the packaged chip unit 22 or only the bare chip unit 21 can be illuminated when lighting, so that different The purpose of the demand.
  • the chip unit 2 can also be divided into only one bare chip unit 21 and a wrapped chip unit 22 formed by covering a surface of the bare chip unit 21 with a first fluorescent layer a.
  • the packaged chip unit 22 is divided into two or more color temperatures, and the wrapped chip unit 22 of each color temperature is evenly distributed with the bare chip unit 21.
  • the number of the packaged chip units 22 of each color temperature may be the same or different, and the number of the packaged chip units 22 of each color temperature may be the same as or different from the number of the bare chip units 21, as long as the staggered uniform distribution is can.

Abstract

一种高效LED智能光源，包括封装基板（1）和设于封装基板（1）上的芯片单元（2），所述芯片单元（2）分为至少一个裸式芯片单元（21）和至少一个在裸式芯片单元（21）表面覆盖一层第一荧光层（a）形成的包裹式芯片单元（22），所述裸式芯片单元（21）和包裹式芯片单元（22）的色温不同，还设有第二荧光层（b）覆盖上述的裸式芯片单元（21）和包裹式芯片单元（22）。上述高效LED智能光源的光色一致性好，光均匀，混色后的光色连续性增强，解决混光分区分层的现象，整体封装的LED光源气密性好，信赖度高，光色质量高，且制作便捷。

Description

一种高效LED智能光源 技术领域
本发明涉及大功率LED装置技术领域，尤其涉及一种高效LED智能光源。
背景技术
现有可调色温的高功率LED光源采用一种色温制作在基板一侧，另外一种色温制作在基板的另外一侧(如图1)，或是按圆形制作，内圆制作一种色温，外圆制作另外一种色温，中间通过建筑挡墙来分隔两种不同的色温区(如图2)，此种制作方式需要单独建筑一道挡墙的工序以完成后续的不同色温区分的分隔工作，单个分隔区域填充指定的色温，出光面填充难保持一致，由于区域间隔，后续安装透镜或者反光碗混合调节不同色温光的时候光路制作困难，出现混合不均、偏色、光斑不均几率大，光色连续性不佳。
另外还有利用分体LED灯珠贴装于线路板上的方式，该方式若采用大功率的单颗制作则混色不均，眩光较强；若采用尺寸小的多颗拼装，则贴装的平整度难以保证，出光方向会不一致，光色连续性也降低，由于利用分体LED灯珠贴装的方式多了一层的线路板，光源的热阻随之增加，信赖度以及光源寿命也随之降低。
发明内容
本发明的目的是提供一种高效LED智能光源，光色一致性好，光均匀，混色后的光色连续性增强，解决混光分区分层的现象，整体封装的LED光源气密性好，信赖度高，光色质量高，且制作便捷。
为实现上述目的，本发明提供一种高效LED智能光源，包括封装基板和设于封装基板上的芯片单元，所述芯片单元分为至少一个裸式芯片单元和至少一个在裸式芯片单元表面覆盖一层第一荧光层形成的包裹式芯片单元，所述裸式芯片单元和包裹式芯片单元的色温不同，还设有第二荧光层覆盖上述的裸式芯片单元和包裹式芯片单元。
作为本发明的进一步改进，所述包裹式芯片单元的色温为一种，所述裸式芯片单元和包裹式芯片单元交错均匀分布。
作为本发明的更进一步改进，所述包裹式芯片单元的色温为至少两种，且每一种色温的包裹式芯片单元与裸式芯片单元交错均匀分布。
作为本发明的更进一步改进，所述裸式芯片单元由至少一个蓝光芯片构成。
作为本发明的更进一步改进，所述第一荧光层为过渡荧光粉。
作为本发明的进一步改进，所述第二荧光层为封装荧光胶水。
与现有技术相比，本发明的高效LED智能光源的有益效果如下：
(1)通过一次覆盖第一荧光层形成的包裹式芯片单元与初始色温的裸式芯片单元通过第二荧光层一体封装成型构成的LED光源，其整体出光在同一平面，光色一致性好，光均匀，混色后的光色连续性增强，从而可解决混光分区分层的现象，且整体封装的LED光源气密性好，信赖度高，光色质量高，且制作便捷，有益于精益化规模生产，使该高效LED智能光源能广泛应用于各种室内、室外智能灯具之中，而且将多个不同的LED光源安装在一起时可以形成渐变效果。
(2)裸式芯片单元和包裹式芯片单元交错均匀分布，从而可初步实现光色均匀。
通过以下的描述并结合附图，本发明将变得更加清晰，这些附图 用于解释本发明的实施例。
附图说明
图1为现有技术中的高功率LED光源一种方案的示意图。
图2为现有技术中的高功率LED光源另一种方案的示意图。
图3为本发明高效LED智能光源的俯视图。
图4为本发明高效LED智能光源的主视图。
具体实施方式
现在参考附图描述本发明的实施例，附图中类似的元件标号代表类似的元件。
请参考图3-4，所述的高效LED智能光源包括封装基板1和设于封装基板1上的芯片单元2。具体而言，所述芯片单元2分为多个裸式芯片单元21和多个在裸式芯片单元21表面覆盖一层第一荧光层a形成的包裹式芯片单元22，各所述裸式芯片单元21由至少一个芯片构成，该芯片通常选用蓝光芯片，也可选用紫光芯片。更具体而言，每个裸式芯片单元21的色温相同，每个包裹式芯片单元22的色温相同，而包裹式芯片单元22由于第一荧光层a作用而与裸式芯片单元21的色温不同，在多个裸式芯片单元21的表面以及多个包裹式芯片单元22的表面整体覆盖有一层第二荧光层b，从而将一种色温的裸式芯片单元21通过第二层荧光层b的覆盖可得到一种白光色温，而将另一种色温的包裹式芯片单元22通过第二层荧光层b的覆盖可得到另一种白光色温，一次性将色温制作到需求的各自要求，来实现光源的智能调节。所述的多个裸式芯片单元21和多个包裹式芯片单元 22数量相同也可以不同但交错均匀分布，从而可初步实现光色均匀。通过一次覆盖第一荧光层a形成的包裹式芯片单元22与初始色温的裸式芯片单元21一起通过第二荧光层b一体封装成型构成的LED光源，其整体出光在同一平面，光色一致性好，光均匀，混色后的光色连续性增强，从而可解决混光分区分层的现象，且整体封装的LED光源气密性好，信赖度高，光色质量高，且制作便捷，有益于精益化规模生产，使该高效LED智能光源能广泛应用于各种室内、室外智能灯具之中。更具体而言，所述第一荧光层a为过渡荧光粉，所述第二荧光层b为封装荧光胶水，用以达到封装目的。更具体而言，包裹式芯片单元22和裸式芯片单元21可被单独控制点亮，即点亮时可仅点亮包裹式芯片单元22或仅点亮裸式芯片单元21，从而可以达到不同需求的目的。
在其他实施例中，也可以将所述芯片单元2仅分为一个裸式芯片单元21和一个在裸式芯片单元21表面覆盖一层第一荧光层a形成的包裹式芯片单元22。
在其他实施例中，所述包裹式芯片单元22分为两种或两种以上的色温，且每一种色温的包裹式芯片单元22与裸式芯片单元21交错均匀分布。每一种色温的包裹式芯片单元22的数量可以相同也可以不同，且每一种色温的包裹式芯片单元22的数量与裸式芯片单元21的数量可以相同也可以不同，只要交错均匀分布即可。
以上结合最佳实施例对本发明进行了描述，但本发明并不局限于以上揭示的实施例，而应当涵盖各种根据本发明的本质进行的修改、等效组合。

Claims (6)

  1. 一种高效LED智能光源，包括封装基板和设于封装基板上的芯片单元，其特征在于：所述芯片单元分为至少一个裸式芯片单元和至少一个在裸式芯片单元表面覆盖一层第一荧光层形成的包裹式芯片单元，所述裸式芯片单元和包裹式芯片单元的色温不同，还设有第二荧光层覆盖上述的裸式芯片单元和包裹式芯片单元。
  2. 如权利要求1所述的高效LED智能光源，其特征在于：所述包裹式芯片单元的色温为一种，所述裸式芯片单元和包裹式芯片单元交错均匀分布。
  3. 如权利要求1所述的高效LED智能光源，其特征在于：所述包裹式芯片单元的色温为至少两种，且每一种色温的包裹式芯片单元与裸式芯片单元交错均匀分布。
  4. 如权利要求1-3任一项所述的高效LED智能光源，其特征在于：所述裸式芯片单元由至少一个芯片构成。
  5. 如权利要求1-3任一项所述的高效LED智能光源，其特征在于：所述第一荧光层为过渡荧光粉。
  6. 6.如权利要求1-3任一项所述的高效LED智能光源，其特征在于：所述第二荧光层为封装荧光胶水。
PCT/CN2016/108993 2015-12-25 2016-12-08 一种高效led智能光源 WO2017107776A1 (zh)

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EP16877587.2A EP3358241A4 (en) 2015-12-25 2016-12-08 Efficient led intelligent light source
JP2018522619A JP2018535552A (ja) 2015-12-25 2016-12-08 効率的なｌｅｄインテリジェント光源
US15/771,089 US20180315902A1 (en) 2015-12-25 2016-12-08 Efficient led intelligent light source

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CN106409820A (zh) * 2016-10-24 2017-02-15 中山市立体光电科技有限公司 一种可调色温的led灯珠及其封装方法
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