WO2017096709A1 - 用于打印成膜工艺的凹槽结构及其制作方法 - Google Patents

用于打印成膜工艺的凹槽结构及其制作方法 Download PDF

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WO2017096709A1
WO2017096709A1 PCT/CN2016/072871 CN2016072871W WO2017096709A1 WO 2017096709 A1 WO2017096709 A1 WO 2017096709A1 CN 2016072871 W CN2016072871 W CN 2016072871W WO 2017096709 A1 WO2017096709 A1 WO 2017096709A1
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branch
layer
groove
dam
branch dam
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PCT/CN2016/072871
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English (en)
French (fr)
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刘亚伟
吴聪原
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深圳市华星光电技术有限公司
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Priority to US14/912,928 priority Critical patent/US9954170B2/en
Publication of WO2017096709A1 publication Critical patent/WO2017096709A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/042—Changing their shape, e.g. forming recesses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • the present invention relates to the field of manufacturing technology of an organic light emitting diode display device, and more particularly to a groove structure for a film forming process and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED Organic Light Emitting Display
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • the structure of an OLED display device generally includes a substrate, an anode disposed on the substrate, a cathode disposed on the anode, and an organic functional layer sandwiched between the anode and the cathode.
  • the organic functional layer generally includes a Hole Transport Layer (HTL), an Emissive Layer (EML), and an Electro Transport Layer (ETL).
  • Each functional layer may be one layer, or more than one layer, for example, a hole transport functional layer, which may be subdivided into a Hole Injection Layer (HIL) and a hole transport layer; an electron transport functional layer may be subdivided It is an electron transport layer and an electron injection layer (EIL).
  • HIL Hole Injection Layer
  • EIL electron injection layer
  • the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • the OLED display device is generally formed by first forming an anode on a substrate, forming a hole transport functional layer on the anode, forming a light-emitting functional layer on the hole transport functional layer, and forming an electron transport functional layer on the light-emitting functional layer.
  • a cathode is formed on the electron transport functional layer, wherein the material of the cathode and the anode is usually indium tin oxide (ITO).
  • ITO indium tin oxide
  • the preparation methods of organic functional layers such as HTL, EML, and ETL generally include vacuum thermal evaporation and solution processing.
  • the so-called solution film formation is to process the required materials, such as fine particles dispersed into nanometers, and then dissolved in the corresponding solution, and then deposit the solution on the surface of the substrate by using a film forming device, and then volatilize the solvent. A desired film is formed on the surface of the substrate.
  • the specific manner of film formation can be further subdivided into Ink-jet Printing, Nozzle Printing, Roller Printing, Spin Coating, and the like.
  • a groove is usually formed to restrict the ink, and after drying and baking, the ink shrinks to form a film within a range limited by the groove.
  • the groove 120 is surrounded by a dam 110 disposed on the periphery of the substrate 100 and the ITO anode 130.
  • the ink injection layer 140, the hole transport layer 150, and the light-emitting function layer 160 are formed by depositing ink in the groove 120. And other organic functional layers.
  • the inner peripheral surface of the bank 110 is generally disposed at an oblique angle ⁇ 60° with the upper surface of the substrate 100, and the contact angle between the ink deposited in the groove 120 and the upper surface of the groove is ⁇ 45°.
  • the contact angle between the ink and the inclined inner peripheral surface of the dam 110 has a large influence on the flatness of the film formation.
  • the slope of the inner peripheral surface of the dam 110 is relatively high, resulting in a contact angle ⁇ being too small, resulting in a final film formation.
  • the thickness uniformity is poor, and when the organic functional layer of the film-forming OLED display device is printed, the organic functional layer is first brightened, which affects the display effect.
  • Another object of the present invention is to provide a method for manufacturing a groove for a film forming process, and the groove obtained by the method can improve the uniformity of the thickness of the organic functional layer film printed in the groove and improve Photoelectric properties of organic functional layers.
  • the present invention provides a groove structure for a printing film forming process, the groove structure is located on a substrate, including a dam, and a groove surrounded by the dam;
  • the dam comprises at least two layers of branched dam layers arranged in a stack, and the contact angle formed by the inclined inner peripheral surface of the branch dam layer surrounding the groove and the ink increases from the lowermost branch dam layer to the uppermost branch dam layer.
  • the groove structure is used for printing film formation of an organic functional layer of an OLED display device, the substrate is provided with an anode, and the dam surrounding the groove is disposed on a peripheral edge of the anode and the substrate.
  • the dam comprises a first branch dam layer disposed on a peripheral edge of the anode and the substrate, and a second branch dam layer stacked on the first branch dam layer.
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the ink of less than 10°
  • the inclined inner circumferential surface of the second branch dam layer surrounding the groove forms a contact angle with the ink of more than 20 °
  • the distance between the upper surface of the first branch dam layer and the upper surface of the anode is 50 nm to 800 nm.
  • the dam includes a first branch dam layer disposed on a peripheral edge of the anode and the substrate, a second branch dam layer stacked on the first branch dam layer, and stacked on the dam The third branch dam layer on the second branch dam layer.
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the ink of less than 10°
  • the inclined inner circumferential surface of the second branch dam layer surrounding the groove forms a contact angle with the ink of more than 20 And less than 30°
  • the inclined inner circumferential surface of the third branch dam layer surrounding the groove forms a contact angle with the ink of more than 30° and less than 40°
  • the upper surface of the first branch dam layer and the upper surface of the anode The distance is from 50 nm to 800 nm.
  • the invention also provides a method for manufacturing a groove for printing a film forming process, comprising the following steps:
  • Step 1 Providing a substrate and at least two kinds of branch dam layer materials
  • Step 2 using the at least two kinds of branch dam layer materials to sequentially form at least two layers of branched dam layers on the substrate by coating, drying, and etching processes to form a bank, and the dam is surrounded by grooves;
  • the contact angle formed by the inclined inner peripheral surface of the branch dam layer surrounding the groove and the ink increases from the lowermost branch dam layer to the uppermost branch dam layer.
  • the anode is disposed on the substrate
  • the step 2 specifically includes:
  • Step 21 forming a first branch dam layer on the peripheral edge of the anode and the substrate by using a coating, drying, and etching process using the first branch dam material;
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the ink of less than 10°, and the distance between the upper surface of the first branch dam layer and the upper surface of the anode is 50 nm to 800 nm;
  • Step 22 using a second branch dam material to form a second branch dam layer stacked on the first branch dam layer by a coating, drying, and etching process;
  • the inclined inner peripheral surface of the second branch dam layer surrounding the groove forms a contact angle with the ink of more than 20°.
  • the anode is disposed on the substrate
  • the step 2 specifically includes:
  • Step 21 forming a first branch dam layer on the peripheral edge of the anode and the substrate by using a coating, drying, and etching process using the first branch dam material;
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the ink of less than 10°, and the distance between the upper surface of the first branch dam layer and the upper surface of the anode is 50 nm to 800 nm;
  • Step 22 using a second branch dam material to form a second branch dam layer stacked on the first branch dam layer by a coating, drying, and etching process;
  • the inclined inner circumferential surface of the second branch dam layer surrounding the groove forms a contact angle with the ink of greater than 20° and less than 30°;
  • Step 23 forming a third branch dam material by coating, drying, and etching processes Laminating a third branch dam layer disposed on the second branch dam layer;
  • the inclined inner peripheral surface of the third branch dam layer surrounding the groove forms a contact angle with the ink of more than 30° and less than 40°.
  • the hydrophilicity of the at least two branch dam layer materials provided in the step 1 is different.
  • the present invention also provides a groove structure for a printing film forming process, the groove structure is located on a substrate, including a dam, and a groove surrounded by the dam;
  • the dam comprises at least two layers of branched dam layers arranged in a stack, and the contact angle formed by the inclined inner peripheral surface of the branch dam layer surrounding the groove and the ink increases from the lowermost branch dam layer to the uppermost branch dam layer. ;
  • the groove structure is used for printing film formation of an organic functional layer of the OLED display device, the substrate is provided with an anode, and the dam surrounding the groove is disposed on the peripheral edge of the anode and the substrate;
  • the dam comprises a first branch dam layer disposed on a peripheral edge of the anode and the substrate, and a second branch dam layer stacked on the first branch dam layer;
  • the inclined inner circumferential surface of the first branch dam layer surrounding the groove forms a contact angle with the ink of less than 10°
  • the second branch dam layer surrounds the inclined inner circumferential surface of the groove to form a contact angle with the ink More than 20°
  • the distance between the upper surface of the first branch dam layer and the upper surface of the anode is 50 nm to 800 nm.
  • the present invention provides a groove structure for a film forming process, and the dam of the surrounding groove is disposed to include at least two layers of branched dam layers, and the branch dam layer
  • the contact angle formed by the inclined inner peripheral surface surrounding the groove and the ink is increased from the lowermost branch dam layer to the uppermost branch dam layer, which can limit the creeping degree of the ink on the inclined inner peripheral surface of the groove, and improve the concave shape.
  • the uniformity of the thickness of the organic functional layer film printed in the groove improves the photoelectric performance of the organic functional layer.
  • the invention provides a method for manufacturing a groove for printing a film forming process, wherein the groove obtained by the method can limit the rising height of the ink on the inclined inner circumferential surface of the groove, and the printing is improved in the groove.
  • the uniformity of the thickness of the organic functional layer film improves the photoelectric performance of the organic functional layer.
  • FIG. 1 is an organic process for preparing an organic OLED display device by printing film formation. Schematic diagram of the functional layer;
  • FIG. 2 is a schematic view showing the relationship between a groove and an ink in a conventional film forming method
  • 3 is a schematic view showing the relationship between the ink and the groove when the ink climbs too high on the inclined inner peripheral surface of the dam surrounding the groove in the conventional printing film forming method;
  • Figure 4 is a schematic view showing a first embodiment of a groove structure for a printing film forming process of the present invention
  • Figure 5 is a schematic view showing a second embodiment of a groove structure for a printing film forming process of the present invention.
  • Figure 6 is a flow chart of a method of making a groove for a film forming process of the present invention.
  • the present invention first provides a groove structure for a film forming process
  • FIGS. 4 and 5 respectively show a first embodiment and a second embodiment of a groove structure for a film forming process of the present invention.
  • the groove structure is located on the substrate 1, and includes: a bank 2, and a groove 3 surrounded by the bank 2.
  • the dam 2 includes at least two layers of branched dam layers stacked, the branch dam layer surrounding the inclined inner peripheral surface of the groove 3 and the contact angle formed by the ink from the lowermost branch dam layer to the uppermost branch dam layer layer by layer Increase.
  • the at least two layers of branch dam layers are formed of materials having different hydrophilicities, such that the inclined inner peripheral surfaces of the different branch dam layers surrounding the grooves 3 are different from the contact angle formed by the ink.
  • the groove structure is used for printing film formation of an organic functional layer of an OLED display device, and the substrate 1 is further provided with an anode 11 , and the bank 2 surrounding the groove 3 is disposed around the anode 11 On the edge and on the substrate 1.
  • the substrate 1 is a glass substrate, and the material of the anode 11 is ITO.
  • the bank 2 in the first embodiment of the groove structure for printing a film forming process of the present invention, includes a first electrode disposed on the peripheral edge of the anode 11 and on the substrate 1. A branch dam layer 21 and a second branch dam layer 22 laminated on the first branch dam layer 21.
  • the first branch dam layer 21 is surrounded by the inclined inner peripheral surface of the groove 3 and the contact angle formed by the ink is less than 10°
  • the second branch dam layer 22 is surrounded by the inclined inner peripheral surface of the groove 3 and the ink.
  • the contact angle formed is greater than 20°
  • the distance between the upper surface of the first branch bank layer 21 and the upper surface of the anode 11 is 50 nm to 800 nm.
  • the dam 2 further includes a layered on the second branch A third branch dam layer 23 on the dam layer 22.
  • the second branch dam layer 22 is surrounded by the inclined inner peripheral surface of the groove 3 and the contact angle formed by the ink is greater than 20° and less than 30°, and the third branch dam layer 23 is surrounded by the inclination of the groove 3
  • the contact angle formed by the circumferential surface with the ink is greater than 30° and less than 40°.
  • the present invention further provides a method for manufacturing a groove for a film forming process, which comprises the following steps:
  • Step 1 Provide a substrate 1 and at least two kinds of branch dam layer materials.
  • the at least two kinds of branch dam layer materials have different hydrophilicities.
  • An anode 11 is further disposed on the substrate 1.
  • the substrate 1 is a glass substrate, and the material of the anode 11 is ITO.
  • Step 2 Using the at least two kinds of branch dam layer materials, at least two layers of stacked dam layers are sequentially formed on the substrate 1 by coating, drying, and etching processes to form a dam 2, and the dam 2 is surrounded by grooves. 3;
  • the contact angle formed by the branching dam layer surrounding the inclined inner peripheral surface of the groove 3 and the ink increases from the lowermost branch dam layer to the uppermost branch dam layer.
  • the step 2 specifically includes:
  • Step 21 using the first branch dam material through the coating, drying, and etching process on the peripheral edge of the anode 11 and the substrate 1 to form a first branch dam layer 21;
  • the first branch dam layer 21 is surrounded by the inclined inner peripheral surface of the groove 3 and the contact angle formed by the ink is less than 10°, and the distance between the upper surface of the first branch dam layer 21 and the upper surface of the anode 11 is 50 nm to 800 nm.
  • Step 22 using the second branch dam material to form a second branch dam layer 22 laminated on the first branch dam layer 21 by coating, drying, and etching process;
  • the second branch dam layer 22 is surrounded by the inclined inner peripheral surface of the groove 3 to form a contact angle with the ink of more than 20°.
  • the step 2 specifically includes:
  • Step 21 using the first branch dam material through the coating, drying, and etching process on the peripheral edge of the anode 11 and the substrate 1 to form a first branch dam layer 21;
  • the first branch dam layer 21 is surrounded by the inclined inner peripheral surface of the groove 3 and the contact angle formed by the ink is less than 10°, and the distance between the upper surface of the first branch dam layer 21 and the upper surface of the anode 11 is 50 nm to 800 nm.
  • Step 22 using the second branch dam material to form a second branch dam layer 22 laminated on the first branch dam layer 21 by coating, drying, and etching processes;
  • the second branch dam layer 22 is surrounded by the inclined inner peripheral surface of the groove 3 to form a contact angle with the ink of more than 20° and less than 30°.
  • Step 23 using a third branch dam material by coating, drying, and etching process to form a third branch dam layer 23 stacked on the second branch dam layer 22;
  • the third branch dam layer 22 is surrounded by the inclined inner peripheral surface of the groove 3 to form a contact angle with the ink of more than 30° and less than 40°.
  • the groove 3 obtained by the above method since the dam 2 surrounding the groove 3 comprises at least two laminated bank dam layers, the branch dam layer is surrounded by the inclined inner peripheral surface of the groove 3 to form contact with the ink
  • the angle increases from the lowermost branch dam layer to the uppermost branch dam layer layer by layer, and the difference in the contact angle formed by the different branch dam layers and the ink can limit the climb of the ink in the groove 3 on the inclined inner peripheral surface of the groove 3.
  • the height improves the uniformity of the thickness of the organic functional layer film printed in the groove 3, improves the photoelectric performance of the organic functional layer, and improves the display effect of the OLED display device.
  • the groove structure for the printing film forming process of the present invention the dam of the surrounding groove is disposed to include at least two layers of branched dam layers, and the branch dam layer is surrounded by grooves
  • the contact angle between the inclined inner peripheral surface and the ink increases from the lowermost branch dam layer to the uppermost branch dam layer layer by layer, which can limit the creep height of the ink on the inclined inner peripheral surface of the groove, and improve printing in the groove
  • the uniformity of the thickness of the organic functional layer film improves the photoelectric performance of the organic functional layer.
  • the groove obtained by the method can limit the climbing height of the ink on the inclined inner circumferential surface of the groove, and improve the organic function printed in the groove
  • the uniformity of the thickness of the layer film improves the photoelectric performance of the organic functional layer.

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Abstract

一种用于打印成膜工艺的凹槽结构及其制作方法。该用于打印成膜工艺的凹槽结构，将围拢成的凹槽(3)的堤坝(2)设置为至少包括两层层叠设置的分支堤坝层（21、22），且所述分支堤坝层（21、22）围拢成凹槽(3)的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大，能够限制墨水在凹槽(3)的倾斜内周面的爬升高度，改善在凹槽(3)内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。该用于打印成膜工艺的凹槽的制作方法，采用该方法制得的凹槽能够限制墨水在凹槽的倾斜内周面的爬升高度，改善在该凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。

Description

用于打印成膜工艺的凹槽结构及其制作方法 技术领域
本发明涉及有机发光二极管显示器件制造技术领域，尤其涉及一种用于打印成膜工艺的凹槽结构及其制作方法。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示器件具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示器件的结构一般包括：基板、设于基板上的阳极、设于阳极上的阴极以及夹在阳极与阴极之间的有机功能层。其中有机功能层，一般包括空穴传输功能层(Hole Transport Layer，HTL)、发光功能层(Emissive Layer，EML)、及电子传输功能层(Electron Transport Layer，ETL)。每个功能层可以是一层，或者一层以上，例如空穴传输功能层，可以细分为空穴注入层(Hole Injection Layer，HIL)和空穴传输层；电子传输功能层，可以细分为电子传输层和电子注入层(Electron Injection Layer，EIL)。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。
OLED显示器件的制作方法通常为，先在基板上形成阳极，在该阳极上形成空穴传输功能层，在空穴传输功能层上形成发光功能层，在发光功能层上形成电子传输功能层，在电子传输功能层上形成阴极，其中阴极与阳极的材料通常采用氧化铟锡(ITO)。HTL、EML、ETL等有机功能层的制备方式通常包括真空热蒸镀(Vacuum Thermal Evaporation)与溶液成膜(Solution Process)两种。
所谓溶液成膜即是把所需材料经过处理，比如分散成纳米级的微小颗粒，然后溶解在相应的溶液中，再应用成膜设备将该溶液沉积在基板表面，带溶剂挥发后，即可在基板表面形成所需薄膜。成膜的具体方式又可以细分为喷墨打印(Ink-jet Printing)、连续打印(Nozzle Printing)、滚筒打印(Roller Printing)、旋转涂布(Spin Coating)等。
在应用过打印成膜工艺的基板上，通常会制作凹槽，用来限制住墨水，通过干燥烘烤后，墨水收缩在该凹槽限制的范围内形成薄膜。请参阅图1， 所述凹槽120由设于基板100、及ITO阳极130四周边缘上的堤坝110围成，通过在凹槽120内沉积墨水，形成空穴注入层140、空穴传输层150、发光功能层160等有机功能层。请参阅图2，通常设置堤坝110的内周面与基板100的上表面形成的斜角α≤60°，沉积于该凹槽120内的墨水与凹槽上表面的接触角θ≥45°。
墨水与堤坝110的倾斜内周面的之间的接触角对于成膜的平整度有很大的影响。请参阅图3，由于不同墨水的亲水性不同，对于亲水性较好的墨水，会在堤坝110的倾斜内周面上爬坡较高，导致接触角θ过小，进而导致最终形成薄膜的厚度均匀性较差，在打印成膜OLED显示器件的有机功能层时，会导致有机功能层中间先亮，影响显示效果。
发明内容
本发明的目的在于提供一种用于打印成膜工艺的凹槽结构，能够改善在该凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。
本发明的目的还在于提供一种用于打印成膜工艺的凹槽的制作方法，采用该方法制得的凹槽能够改善在该凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。
为实现上述目的，本发明提供了一种用于打印成膜工艺的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
所述堤坝至少包括两层层叠设置的分支堤坝层，所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大。
所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板上设有阳极，所述围拢成凹槽的堤坝设于所述阳极的四周边缘及基板上。
可选的，所述堤坝包括设于所述阳极的四周边缘及基板上的第一分支堤坝层、及层叠于所述第一分支堤坝层上的第二分支堤坝层。
所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°，所述第一分支堤坝层上表面与阳极上表面的距离为50nm～800nm。
可选的，所述堤坝包括设于所述阳极的四周边缘及基板上的第一分支堤坝层、层叠于所述第一分支堤坝层上的第二分支堤坝层、及层叠设于所述第二分支堤坝层上的第三分支堤坝层。
所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°且小于30°，所述第三分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于30°且小于40°，所述第一分支堤坝层上表面与阳极上表面的距离为50nm～800nm。
本发明还提供一种用于打印成膜工艺的凹槽的制作方法，包括如下步骤：
步骤1、提供一基板和至少两种分支堤坝层材料；
步骤2、使用所述至少两种分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板上依次制作至少两层层叠设置的分支堤坝层，形成堤坝，所述堤坝围拢成凹槽；
所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大。
可选的，所述步骤1中，基板上设有阳极；
所述步骤2具体包括：
步骤21、使用第一种分支堤坝材料通过涂布、干燥、及蚀刻工艺于所述阳极的四周边缘及基板上形成第一分支堤坝层；
所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第一分支堤坝层上表面与阳极上表面距离为50nm～800nm；
步骤22、使用第二种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠于所述第一分支堤坝层上的第二分支堤坝层；
所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°。
可选的，所述步骤1中，基板上设有阳极；
所述步骤2具体包括：
步骤21、使用第一种分支堤坝材料通过涂布、干燥、及蚀刻工艺于所述阳极的四周边缘及基板上形成第一分支堤坝层；
所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第一分支堤坝层上表面与阳极上表面距离为50nm～800nm；
步骤22、使用第二种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠于所述第一分支堤坝层上的第二分支堤坝层；
所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°且小于30°；
步骤23、使用第三种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成 层叠设于所述第二分支堤坝层上的第三分支堤坝层；
所述第三分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于30°且小于40°。
所述步骤1中提供的至少两种分支堤坝层材料的亲水性不同。
本发明还提供一种用于打印成膜工艺的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
所述堤坝至少包括两层层叠设置的分支堤坝层，所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大；
其中，所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板上设有阳极，所述围拢成凹槽的堤坝设于所述阳极的四周边缘及基板上；
其中，所述堤坝包括设于所述阳极的四周边缘及基板上的第一分支堤坝层、及层叠于所述第一分支堤坝层上的第二分支堤坝层；
其中，所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°，所述第一分支堤坝层上表面与阳极上表面的距离为50nm～800nm。
本发明的有益效果：本发明提供的一种用于打印成膜工艺的凹槽结构，将围拢成的凹槽的堤坝设置为至少包括两层层叠设置的分支堤坝层，且所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大，能够限制墨水在凹槽的倾斜内周面的爬升高度，改善在凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。本发明提供的一种用于打印成膜工艺的凹槽的制作方法，采用该方法制得的凹槽能够限制墨水在凹槽的倾斜内周面的爬升高度，改善在该凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的OLED显示器件制作过程中通过打印成膜方式制备有机 功能层的示意图；
图2为现有的打印成膜方式中凹槽与墨水的关系示意图；
图3为现有的打印成膜方式中当墨水在围成凹槽的堤坝的倾斜内周面上爬升过高时，墨水与凹槽的关系示意图；
图4为本发明的用于打印成膜工艺的凹槽结构的第一实施例的示意图；
图5为本发明的用于打印成膜工艺的凹槽结构的第二实施例的示意图；
图6为本发明的用于打印成膜工艺的凹槽制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明首先提供一种用于打印成膜工艺的凹槽结构，图4、图5所示分别为本发明的用于打印成膜工艺的凹槽结构的第一实施例、第二实施例。
该凹槽结构位于基板1上，包括：堤坝2、及由堤坝2围成拢的凹槽3。
所述堤坝2至少包括两层层叠设置的分支堤坝层，所述分支堤坝层围拢成凹槽3的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大。
所述至少两层分支堤坝层由亲水性不同的材料形成，进而使得不同分支堤坝层围成凹槽3的倾斜内周面与墨水形成的接触角不同。
进一步地所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板1上还设有阳极11，所述围拢成凹槽3的堤坝2设于所述阳极11的四周边缘及基板1上。优选的，所述基板1为玻璃基板，阳极11的材料为ITO。
具体地，请参阅图4，在本发明的的用于打印成膜工艺的凹槽结构的第一实施例中，所述堤坝2包括设于所述阳极11的四周边缘及基板1上的第一分支堤坝层21、及层叠于所述第一分支堤坝层21上的第二分支堤坝层22。
其中，所述第一分支堤坝层21围拢成凹槽3的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与墨水形成的接触角大于20°，所述第一分支堤坝层21上表面与阳极11上表面距离为50nm～800nm。
特别地，利用第一、及第二分支堤坝层21、22与墨水形成的接触角差异，能够限制凹槽3内的墨水在在凹槽3的倾斜内周面的爬升高度，改善在凹槽3内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光 电性能，提升OLED显示器件的显示效果。
此外，为更好地限制墨水在凹槽3的倾斜内周面的爬升高度，请参阅图5，在本发明的第二实施例中，所述堤坝2还包括层叠设于所述第二分支堤坝层22上的第三分支堤坝层23。
其中，所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与墨水形成的接触角大于20°且小于30°，所述第三分支堤坝层23围拢成凹槽3的倾斜内周面与墨水形成的接触角大于30°且小于40°。
其余均与第一实施例相同，此处不再赘述。
请参阅图6，结合图4或图5，本发明还提供一种用于打印成膜工艺的凹槽的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板1和至少两种分支堤坝层材料。
具体地，所述至少两种分支堤坝层材料的亲水性不同。
所述基板1上还设有阳极11。优选的，所述基板1为玻璃基板，阳极11的材料为ITO。
步骤2、使用所述至少两种分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板1上依次制作至少两层层叠设置的分支堤坝层，形成堤坝2，所述堤坝2围拢成凹槽3；
所述分支堤坝层围拢成凹槽3的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大。
可选的，若制作如图4所示的凹槽3，则所述步骤2具体包括：
步骤21、使用第一种分支堤坝材料通过涂布、干燥、及蚀刻工艺于所述阳极11的四周边缘及基板1上形成第一分支堤坝层21；
所述第一分支堤坝层21围拢成凹槽3的倾斜内周面与墨水形成的接触角小于10°，所述第一分支堤坝层21上表面与阳极11上表面距离为50nm～800nm。
步骤22、使用用第二种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠于所述第一分支堤坝层21上的第二分支堤坝层22；
所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与墨水形成的接触角大于20°。
可选的，若制作如图5所示的凹槽3，则所述步骤2具体包括：
步骤21、使用第一种分支堤坝材料通过涂布、干燥、及蚀刻工艺于所述阳极11的四周边缘及基板1上形成第一分支堤坝层21；
所述第一分支堤坝层21围拢成凹槽3的倾斜内周面与墨水形成的接触角小于10°，所述第一分支堤坝层21上表面与阳极11上表面距离为 50nm～800nm。
步骤22、使用第二种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠于所述第一分支堤坝层21上的第二分支堤坝层22；
所述第二分支堤坝层22围拢成凹槽3的倾斜内周面与墨水形成的接触角大于20°且小于30°。
步骤23、使用第三种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠设于所述第二分支堤坝层22上的第三分支堤坝层23；
所述第三分支堤坝层22围拢成凹槽3的倾斜内周面与墨水形成的接触角大于30°且小于40°。
采用上述方法制得的凹槽3，由于围拢成凹槽3的堤坝2至少包括两层层叠设置的分支堤坝层，所述分支堤坝层围拢成凹槽3的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大，利用不同分支堤坝层与墨水形成的接触角差异，能够限制凹槽3内的墨水在凹槽3的倾斜内周面的爬升高度，改善在凹槽3内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能，提升OLED显示器件的显示效果。
综上所述，本发明的用于打印成膜工艺的凹槽结构，将围拢成的凹槽的堤坝设置为至少包括两层层叠设置的分支堤坝层，且所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大，能够限制墨水在凹槽的倾斜内周面的爬升高度，改善在凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。本发明的用于打印成膜工艺的凹槽的制作方法，采用该方法制得的凹槽能够限制墨水在凹槽的倾斜内周面的爬升高度，改善在该凹槽内打印出的有机功能层薄膜厚度的均匀性，提高有机功能层的光电性能。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种用于打印成膜工艺的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
    所述堤坝至少包括两层层叠设置的分支堤坝层，所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大。
  2. 如权利要求1所述的用于打印成膜工艺的凹槽结构，其中，所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板上设有阳极，所述围拢成凹槽的堤坝设于所述阳极的四周边缘及基板上。
  3. 如权利要求2所述的用于打印成膜工艺的凹槽结构，其中，所述堤坝包括设于所述阳极的四周边缘及基板上的第一分支堤坝层、及层叠于所述第一分支堤坝层上的第二分支堤坝层。
  4. 如权利要求3所述的用于打印成膜工艺的凹槽结构，其中，所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°，所述第一分支堤坝层上表面与阳极上表面的距离为50nm～800nm。
  5. 如权利要求2所述的用于打印成膜工艺的凹槽结构，其中，所述堤坝包括设于所述阳极的四周边缘及基板上的第一分支堤坝层、层叠于所述第一分支堤坝层上的第二分支堤坝层、及层叠设于所述第二分支堤坝层上的第三分支堤坝层。
  6. 如权利要求5所述的用于打印成膜工艺的凹槽结构，其中，所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°且小于30°，所述第三分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于30°且小于40°，所述第一分支堤坝层上表面与阳极上表面的距离为50nm～800nm。
  7. 一种用于打印成膜工艺的凹槽的制作方法，包括如下步骤：
    步骤1、提供一基板和至少两种分支堤坝层材料；
    步骤2、使用所述至少两种分支堤坝层材料通过涂布、干燥、及蚀刻工艺在基板上依次制作至少两层层叠设置的分支堤坝层，形成堤坝，所述堤坝围拢成凹槽；
    所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下 层分支堤坝层往最上层分支堤坝层逐层增大。
  8. 如权利要求7所述的用于打印成膜工艺的凹槽的制作方法，其中，所述步骤1中，基板上设有阳极；
    所述步骤2具体包括：
    步骤21、使用第一种分支堤坝材料通过涂布、干燥、及蚀刻工艺于所述阳极的四周边缘及基板上形成第一分支堤坝层；
    所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第一分支堤坝层上表面与阳极上表面距离为50nm～800nm；
    步骤22、使用用第二种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠于所述第一分支堤坝层上的第二分支堤坝层；
    所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°。
  9. 如权利要求7所述的用于打印成膜工艺的凹槽的制作方法，其中，
    所述步骤1中，基板上设有阳极；
    所述步骤2具体包括：
    步骤21、使用第一种分支堤坝材料通过涂布、干燥、及蚀刻工艺于所述阳极的四周边缘及基板上形成第一分支堤坝层；
    所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第一分支堤坝层上表面与阳极上表面距离为50nm～800nm；
    步骤22、使用第二种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠于所述第一分支堤坝层上的第二分支堤坝层；
    所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°且小于30°；
    步骤23、使用第三种分支堤坝材料通过涂布、干燥、及蚀刻工艺形成层叠设于所述第二分支堤坝层上的第三分支堤坝层；
    所述第三分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于30°且小于40°。
  10. 如权利要求7所述的用于打印成膜工艺的凹槽的制作方法，其中，所述步骤1中提供的至少两种分支堤坝层材料的亲水性不同。
  11. 一种用于打印成膜工艺的凹槽结构，该凹槽结构位于基板上，包括堤坝、及由堤坝围拢成的凹槽；
    所述堤坝至少包括两层层叠设置的分支堤坝层，所述分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角自最下层分支堤坝层往最上层分支堤坝层逐层增大；
    其中，所述凹槽结构用于OLED显示器件的有机功能层的打印成膜，所述基板上设有阳极，所述围拢成凹槽的堤坝设于所述阳极的四周边缘及基板上；
    其中，所述堤坝包括设于所述阳极的四周边缘及基板上的第一分支堤坝层、及层叠于所述第一分支堤坝层上的第二分支堤坝层；
    其中，所述第一分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角小于10°，所述第二分支堤坝层围拢成凹槽的倾斜内周面与墨水形成的接触角大于20°，所述第一分支堤坝层上表面与阳极上表面的距离为50nm～800nm。
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