WO2017092516A1 - 具有高阻膜的内嵌式触摸屏及显示装置 - Google Patents

具有高阻膜的内嵌式触摸屏及显示装置 Download PDF

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Publication number
WO2017092516A1
WO2017092516A1 PCT/CN2016/103180 CN2016103180W WO2017092516A1 WO 2017092516 A1 WO2017092516 A1 WO 2017092516A1 CN 2016103180 W CN2016103180 W CN 2016103180W WO 2017092516 A1 WO2017092516 A1 WO 2017092516A1
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Prior art keywords
resistance film
high resistance
substrate
touch panel
parts
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PCT/CN2016/103180
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English (en)
French (fr)
Inventor
易伟华
张迅
周慧蓉
张伯伦
余蓉
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江西沃格光电股份有限公司
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Application filed by 江西沃格光电股份有限公司 filed Critical 江西沃格光电股份有限公司
Priority to DK16869826.4T priority Critical patent/DK3287839T3/da
Priority to JP2018513717A priority patent/JP6495541B2/ja
Priority to US15/735,604 priority patent/US10429685B2/en
Priority to ES16869826T priority patent/ES2775742T3/es
Priority to EP16869826.4A priority patent/EP3287839B1/en
Publication of WO2017092516A1 publication Critical patent/WO2017092516A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/22—Antistatic materials or arrangements
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04107—Shielding in digitiser, i.e. guard or shielding arrangements, mostly for capacitive touchscreens, e.g. driven shields, driven grounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes

Definitions

  • the present invention relates to the field of display devices, and in particular to an in-cell touch panel and display device having a high resistance film.
  • the touch screen is an important part of electronic devices such as mobile phones, tablet computers, and e-books.
  • the touch screen can be generally classified into an on-cell (In-Cell) and an in-line (In-Cell) according to the composition.
  • On-Cell refers to a method of embedding a touch panel between a color filter substrate and a polarizer of a display screen, that is, a touch sensor is disposed on the liquid crystal panel, because a touch layer is added, thickness Thicker, uneven color that is easy to produce when touched.
  • In-line refers to the method of embedding the touch panel function into the liquid crystal pixels, that is, embedding the touch sensor function inside the display screen, the thickness of the whole module can be thinned, and the manufacturing cost of the touch screen can be greatly reduced, and the panel manufacturers are greatly affected by the panel manufacturers.
  • an in-cell touch panel usually needs to embed a touch sensor inside a pixel on a thin film transistor array substrate, and the touch sensors easily interfere with each other, resulting in low touch sensitivity.
  • An in-cell touch panel having a high-resistance film includes a first substrate, a thin film transistor substrate, a liquid crystal layer, a color filter, a touch sensing layer, a second substrate, and a high resistance film which are sequentially stacked, and the thin film transistor substrate is oriented a plurality of mutually insulated sensing lines are disposed on the surface of the liquid crystal layer, the high resistance film is formed on a surface of the second substrate away from the touch sensing layer, and the high resistance film and the thin film transistor substrate are electrically connection.
  • the material of the high resistance film comprises a mixture of graphite oxide, tin oxide, a surfactant, and a crosslinking agent.
  • the material of the high resistance film comprises 4 parts to 7 parts by weight.
  • the crosslinking agent is an aziridine crosslinking agent.
  • the high resistance film has a thickness of 30 nm to 50 nm.
  • a polarizing layer is further disposed, the polarizing layer being laminated on a surface of the high resistance film away from the second substrate.
  • a protective cover is further included, and the protective cover is laminated on a surface of the polarizing layer away from the high resistance film.
  • the in-cell touch panel having a high resistance film has a thickness of 0.6 mm to 0.8 mm.
  • the material of the sensing line is ITO.
  • a display device comprising the in-cell touch panel having a high resistance film according to any of the above.
  • the in-cell touch panel having a high resistance film includes a first substrate, a thin film transistor substrate, a liquid crystal layer, a color filter, a touch sensing layer, a second substrate, and a high resistance film which are sequentially stacked.
  • the thin film transistor substrate is provided with a plurality of mutually insulated sensing lines on the surface of the liquid crystal layer.
  • the thin film transistor substrate and the touch sensing layer cooperate to embed the touch panel function into the liquid crystal pixels, thereby reducing the thickness of the touch screen.
  • a high resistance film is disposed on the surface of the second substrate away from the touch sensing layer, and the high resistance film is electrically connected to the thin film transistor substrate.
  • the high-resistance film can instantly release the static electricity generated by the thin film transistor substrate, thereby eliminating static electricity and reducing mutual interference between the touch sensors, thereby improving the touch sensitivity of the in-cell touch panel.
  • FIG. 1 is a schematic structural view of an in-cell touch panel having a high resistance film according to an embodiment
  • FIG. 2 is a schematic structural view of an in-cell touch panel having a high resistance film according to another embodiment.
  • in-cell touch panel having a high resistance film and a preparation method thereof will be further described in detail below mainly in conjunction with specific drawings and specific embodiments.
  • an in-cell touch panel 100 with a high resistance film includes sequential stacking.
  • the first substrate 10 the thin film transistor substrate (TFT substrate) 20, the liquid crystal layer 30, the color filter 40, the touch sensing layer 50, the second substrate 60, and the high resistance film 70.
  • TFT substrate thin film transistor substrate
  • the color filter 40 the touch sensing layer 50
  • the second substrate 60 the high resistance film 70.
  • the thin film transistor substrate 20 is provided with a plurality of mutually insulated sensing lines on the surface of the liquid crystal layer 30.
  • the high resistance film 70 is formed on the surface of the second substrate 60 away from the touch sensing layer 50, and the high resistance film 70 is electrically connected to the thin film transistor substrate 20. .
  • the high resistance film 70 and the thin film transistor substrate 20 can be electrically connected by wires.
  • a plurality of mutually insulated sensing lines are disposed on the surface of the thin film transistor substrate 20 facing the liquid crystal layer 30, and a plurality of mutually insulated sensing lines may be embedded in the liquid crystal layer 30.
  • the thin film transistor substrate 20 cooperates with the touch sensing layer 50, so that the touch panel function is embedded in the liquid crystal pixel, and the touch sensor function is embedded inside the display screen to form an In-Cell type touch screen, which reduces the thickness of the touch screen and makes the screen thinner and lighter.
  • the high resistance film 70 is provided on the surface of the second substrate 60 away from the touch sensing layer 50, and the high resistance film 70 is electrically connected to the thin film transistor substrate 20.
  • the high-resistance film 70 can instantaneously release the static electricity generated by the thin film transistor substrate 20, thereby eliminating static electricity and reducing mutual interference between the touch sensors, thereby improving the touch sensitivity of the in-cell touch panel 100 having a high resistance film.
  • the thickness of the in-cell touch panel 100 having a high resistance film is 0.6 mm to 0.8 mm.
  • the thickness of the touch screen 100 is greatly reduced by embedding the touch panel function into the liquid crystal pixels.
  • the first substrate 10 and the second substrate 60 may be a light transmissive material such as glass.
  • an inductive circuit layer may be formed on the surface of the thin film transistor substrate 20, and an induction line is formed on the surface of the thin film transistor substrate 20 after exposure, development, etching, and the like.
  • the material of the sensing circuit is ITO.
  • the material of the sensing circuit is not limited to ITO, and may be other conductive materials such as AZO. ITO has good electrical conductivity and light transmission.
  • the material of the liquid crystal layer 30 may be an organic substance such as aliphatic, aromatic, or stearic acid.
  • the liquid crystal layer 30 can be formed between the thin film transistor substrate 20 and the color filter 40 by a liquid-filled liquid crystal method, that is, after the thin film transistor substrate 20 and the color filter substrate 40 are paired, the liquid crystal is sucked into a liquid crystal layer by a capillary principle. Alternatively, by dropping the liquid crystal injection method, the liquid crystal is directly dropped on the color filter substrate 40, and then the thin film transistor substrate 20 and the color filter 40 are paired.
  • the touch sensing layer 50 is formed on the surface of the second substrate 60.
  • the material of the touch sensing layer 50 may be ITO.
  • the material of the touch sensing layer is not limited to ITO, and may be other conductive materials such as AZO. ITO Has good electrical conductivity and light transmission.
  • the touch sensing layer 50 and the color filter 40 are bonded under vacuum to obtain a first substrate 10, a thin film transistor substrate (TFT substrate) 20, a liquid crystal layer 30, a color filter 40, and a touch.
  • TFT substrate thin film transistor substrate
  • the sensing layer 50 and the second substrate 60 are bonded under vacuum to obtain a first substrate 10, a thin film transistor substrate (TFT substrate) 20, a liquid crystal layer 30, a color filter 40, and a touch.
  • TFT substrate thin film transistor substrate
  • the sensing layer 50 and the second substrate 60 are bonded under vacuum to obtain a first substrate 10, a thin film transistor substrate (TFT substrate) 20, a liquid crystal layer 30, a color filter 40, and a touch.
  • the sensing layer 50 and the second substrate 60 are bonded under vacuum to obtain a first substrate 10, a thin film transistor substrate (TFT substrate) 20, a liquid crystal layer 30, a color filter 40, and a touch.
  • TFT substrate thin film transistor substrate
  • the thin film transistor substrate 20 cooperates with the touch sensing layer 50 such that the touch panel function is embedded in the liquid crystal pixel, and the touch sensor function is embedded inside the display screen. Driven by an IC (integrated circuit), the touch function is achieved.
  • IC integrated circuit
  • the material of the high resistance film 70 includes a mixture of graphite oxide, tin oxide, a surfactant, and a crosslinking agent.
  • a mixture of graphite oxide, tin oxide, a surfactant, and a crosslinking agent may be printed or sprayed onto the surface of the second substrate 60 away from the touch sensing layer by screen printing, automatic spraying, or the like.
  • the slurry is sprayed onto the surface of the second substrate 60 by an automatic spraying device.
  • the distance of the spray gun from the surface of the second substrate 60 is 20 cm to 40 cm
  • the spraying pressure is 0.5 MPa to 1.5 MPa
  • the temperature is 20 ° C to 30 ° C
  • the humidity is 50% to 60%.
  • the slurry includes a mixture of graphite oxide, tin oxide, a surfactant, a crosslinking agent, and a solvent.
  • the slurry comprises 4 parts to 7 parts of graphite oxide, 10 parts to 13 parts of tin oxide, 25 parts to 30 parts of surfactant, 10 parts to 26 parts of crosslinking agent and 35 parts by weight. ⁇ 45 parts of solvent.
  • the solvent may be water or an organic solvent.
  • the viscosity of the slurry is from 30 cP to 40 cP.
  • Graphite oxide is a new type of carbon material with excellent adsorption properties.
  • Tin oxide SnO 2
  • a composite material having excellent properties can be obtained by mixing graphite oxide, tin oxide, a surfactant, and a crosslinking agent. Tin oxide can change the surface properties of graphite oxide, and the high porosity and large surface area of graphite oxide can improve the dispersion of tin oxide.
  • the synergistic action of the various components results in the high resistance film 70 having excellent adsorption properties and electrical properties.
  • the high-resistance film 70 composed of a mixture of graphite oxide, tin oxide, a surfactant, and a crosslinking agent can instantaneously release the static electricity generated by the thin film transistor substrate 20, thereby eliminating static electricity and improving touch sensitivity. At the same time, due to its excellent adsorption performance, it is possible to form the surface of the second substrate 60 without using an adhesive or the like, and the thickness of the in-cell touch panel 100 having a high resistance film is hardly increased.
  • the mixture of graphite oxide, tin oxide, surfactant and crosslinking agent comprises 4 parts to 7 parts of graphite oxide, 10 parts to 13 parts of tin oxide, 25 parts to 30 parts by weight of surface active parts by weight. And 10 to 26 parts of a crosslinking agent.
  • the mixture of graphite oxide, tin oxide, surfactant and crosslinking agent comprises 5.5 parts by weight of graphite oxide, 11.5 parts of tin oxide, 27.5 parts of surfactant and 18 parts of cross-linking by parts by weight. Agent.
  • the surfactant may be stearic acid, sodium dodecylbenzenesulfonate, quaternary ammonium compound, lecithin, fatty acid glyceride, fatty acid sorbitan (span), polysorbate (Tween), and the like.
  • the surfactant is a DOW FAX 2A1 type surfactant produced by Dow Corporation of the United States.
  • the crosslinking agent may be polyethylene, polyvinyl chloride, polyacrylate, polyalkyl acrylate, styrene, acrylonitrile, acrylic acid, methacrylic acid, glyoxal, aziridine, etc.
  • the crosslinking agent is an aziridine crosslinking agent. Specifically, Shanghai Youen Chemical Co., Ltd. produces SaC-100 aziridine crosslinker.
  • Conventional touch screens generally require the use of a substrate as a carrier to reduce the interference of the touch, but because of the addition of a carrier, the thickness of the product increases. After stacking, the thickness will increase by about 0.4mm, which greatly increases the thickness of electronic devices (such as mobile phones), and the light transmittance is poor. The reflectivity in sunlight is high, which directly affects the experience. At the same time, problems tend to occur during the bonding process, and the yield is low. This will directly lead to increased costs, long processing cycles, and unsuitable for the competitive market environment.
  • the use of semiconductor materials can also increase the sensitivity of the touch screen.
  • the semiconductor materials are expensive, the preparation process is complicated, and it is not suitable for large-scale production.
  • the mixture of the graphite oxide, the tin oxide, the aziridine and the anionic surfactant of the invention has strong adhesion, good electrical conductivity, good light transmittance, stable and strong resistance to oxidation, simple preparation process, and is suitable for large-scale production. .
  • the high resistance film 70 has a thickness of 30 nm to 50 nm.
  • the surface resistance of the high resistance film 70 is 5 ⁇ 10 8 ⁇ /cm 2 to 5 ⁇ 10 9 ⁇ /cm 2 ⁇ .
  • the light transmittance of the high resistance film 70 is ⁇ 92%, where the light transmittance refers to the penetration of the high-resistance film 70 after the high-resistance film 70 is formed by the in-cell touch panel 100 having a high resistance film.
  • the lower the surface resistance of the high resistance film 70 the better the antistatic effect.
  • the smaller the surface resistance is the easier it is to interfere with the in-cell touch screen, and the touch effect is affected.
  • the larger the resistance the less antistatic effect, and the ITO conductivity is very strong.
  • the film thickness is too thin to prevent static electricity.
  • the invention has been experimentally shown that when the surface resistance of the high resistance film 70 is 5 ⁇ 10 8 ⁇ /cm 2 to 5 ⁇ 10 9 ⁇ /cm 2 , the antistatic property does not affect the touch effect, and the thickness is suitable and has good properties. Light transmittance and conductivity, anti-static effect is good.
  • an in-cell touch panel 100 having a high resistance film includes a first substrate 10 , a thin film transistor substrate (TFT substrate) 20 , a liquid crystal layer 30 , a color filter 40 , and a touch layer which are sequentially stacked.
  • the sensing layer 50 and the second substrate 60 further include a polarizing layer 80 and a protective cover 90.
  • the polarizing layer 80 is laminated on the surface of the high resistance film 70 away from the second substrate 60, and the protective cover 90 is laminated on the surface of the polarizing layer 80 away from the high resistance film 70.
  • the material of the polarizer 90 is selected from the group consisting of ethylene-vinyl acetate copolymer (EVA), polyethylene terephthalate (PET), polyvinyl alcohol (PVA) and polyhydroxyamino polyether (AP). At least one of them.
  • EVA ethylene-vinyl acetate copolymer
  • PET polyethylene terephthalate
  • PVA polyvinyl alcohol
  • AP polyhydroxyamino polyether
  • the material of the protective cover 90 is selected from at least one of soda lime glass, high alumina white glass, and Xuhong high alumina glass.
  • the touch panel is divided into small pieces, and the size of the small pieces is generally about 4.5 inches to 6 inches, which is suitable for the size of the screen of the mobile phone.
  • the polarizing layer 80 is formed on the high resistance film 70, and the protective cover 90 is laminated on the polarizing layer 80.
  • the protective cover 90 and the polarizing layer 80 are bonded by an optical adhesive, and the protective cover 90 can protect the high resistance film 70.
  • a display device comprising the above-described in-cell touch panel having a high resistance film. Such a display device has the advantages of clear image, touch sensitivity and the like.
  • the in-cell touch panel 100 having a high resistance film includes a first substrate 10, a thin film transistor substrate 20, a liquid crystal layer 30, a color filter 40, a touch sensing layer 50, and a second substrate 60 which are sequentially stacked.
  • the thin film transistor substrate 20 is provided with a plurality of mutually insulated sensing lines on the surface of the liquid crystal layer 30.
  • the thin film transistor substrate 20 cooperates with the touch sensing layer 50 to embed the touch panel function into the liquid crystal pixels, thereby reducing the thickness of the touch screen.
  • the high resistance film 70 is provided on the surface of the second substrate 60 remote from the touch sensing layer, and the high resistance film 70 is electrically connected to the thin film transistor substrate 20.
  • the high resistance film 70 can laminate the thin film transistor substrate 20 The generated static electricity is released immediately, which eliminates static electricity and reduces mutual interference between the touch sensors, thereby improving the touch sensitivity of the in-cell touch panel.
  • the in-cell touch panel 100 with a high resistance film has a thin thickness, good light transmittance, and a simple preparation method.
  • Instruments automatic spraying equipment, drying oven, washing machine, high resistance meter, film thickness meter, spectrometer, etc.
  • the surfactant is DOW FAX 2A1 surfactant produced by Dow Company of America.
  • the cross-linking agent is SaC-100 aziridine cross-linking agent produced by Shanghai Youen Chemical Co., Ltd.
  • An in-cell touch screen with a high resistance film is prepared by the following steps:
  • TFT substrate thin film transistor substrate
  • first substrate the material of the sensing line is ITO, and exposure, development, etching, etc.
  • an induction line is formed on the surface of the thin film transistor substrate, and a liquid crystal layer is formed on the thin film transistor substrate, and a color filter is laminated to form an a plate.
  • a touch sensing layer is formed on the surface (second substrate) of the other glass substrate, and the material of the touch sensing layer is ITO, which is a b plate.
  • the substrate is fed onto the surface of the spraying equipment and automatically positioned, and then the slurry is sprayed on the second substrate, the slurry comprising a mixture of graphite oxide, tin oxide, a surfactant, a crosslinking agent and a solvent, by weight
  • the number includes 5.5 parts of graphite oxide, 11.5 parts of tin oxide, 27.5 parts of a surfactant, 18 parts of a crosslinking agent, and 37.5 parts of water.
  • the viscosity of the slurry was 35 cP.
  • the distance between the spray gun and the surface of the second substrate is 30cm, the spraying pressure is 1.0MPa, the working environment is dust-free space (100 grade), the temperature is 25 °C, humidity It is 55%. After spraying, it is baked in a drying oven, baked at a temperature of 115 ° C for 15 min, and cooled to obtain a high-resistance film.
  • the thickness of the high resistance film was measured by a film thickness meter to be 40 nm.
  • the light transmittance of the high resistance film was measured by a spectrometer to be 97.8%.
  • the film hardness was 6H.
  • the touch screen further includes a protective cover, a polarizing plate, and a lead wire, which are generally used in the industry, and are not limited herein.
  • the resistance of the high resistance film was measured by a resistance meter to be 5.5 ⁇ 10 8 ⁇ /cm 2 . It shows that the high resistance film has good electrical properties.
  • a constant temperature and humidity chamber at 90 ° C, 60% humidity for 240 hours baking test the resistance change rate of the high resistance film is 10%, indicating good moisture resistance.
  • the alcohol was immersed for 5 minutes, and the resistance change rate of the high resistance film was 10%.
  • the oven was baked at 60 ° C for 240 hours, and the resistivity was changed to 5%, indicating good heat resistance.
  • ITO square resistance of touch sensing layer 155 ⁇ , film thickness
  • the above-mentioned in-cell touch panel with a high resistance film is highly resistant to oxidation, has good electrical conductivity and light transmittance, and has good antistatic effect.
  • An in-cell touch screen with a high resistance film is prepared by the following steps:
  • TFT substrate thin film transistor substrate
  • first substrate the material of the sensing line is ITO, and exposure, development, etching, etc.
  • an induction line is formed on the surface of the thin film transistor substrate, and a liquid crystal layer is formed on the thin film transistor substrate, and a color filter is laminated to form an a plate.
  • a touch sensing layer is formed on the surface (second substrate) of the other glass substrate, and the material of the touch sensing layer is ITO, which is a b plate.
  • the distance between the spray gun and the surface of the second substrate is 20 cm, the spraying pressure is 0.5 MPa, the working environment is a dust-free space (100 grades), the temperature is 20 ° C, and the humidity is 50%. After spraying, it is baked in a drying oven, baked at a temperature of 110 ° C for 10 min, and cooled to obtain a high-resistance film.
  • the thickness of the high resistance film was measured by a film thickness meter to be 30 nm.
  • the light transmittance of the high resistance film was measured by a spectrometer to be 98%.
  • the film hardness was 6H.
  • the touch screen further includes a protective cover, a polarizing plate, and a lead wire, which are generally used in the industry, and are not limited herein.
  • the resistance of the high resistance film was measured by a resistance meter to be 5 ⁇ 10 8 ⁇ /cm 2 , indicating that the high resistance film has good electrical properties.
  • a resistance meter 5 ⁇ 10 8 ⁇ /cm 2
  • the resistance change rate of the high resistance film is 10%, indicating good moisture resistance.
  • the alcohol was immersed for 5 minutes, and the resistance change rate of the high resistance film was 20%.
  • the oven was baked at 60 ° C for 240 hours, and the resistivity was changed to 5%, indicating good heat resistance.
  • ITO square resistance of touch sensing layer 60 ⁇ , film thickness
  • the above-mentioned in-cell touch panel with a high resistance film is highly resistant to oxidation, has good electrical conductivity and light transmittance, and has good antistatic effect.
  • An in-cell touch screen with a high resistance film is prepared by the following steps:
  • TFT substrate thin film transistor substrate
  • first substrate the material of the sensing line is ITO, and exposure, development, etching, etc.
  • an induction line is formed on the surface of the thin film transistor substrate, and a liquid crystal layer is formed on the thin film transistor substrate, and a color filter is laminated to form an a plate.
  • the touch sensing layer On the surface of the other glass substrate (the second substrate), the touch sensing layer
  • the material is ITO, and the b plate is made.
  • the substrate is fed onto the surface of the spraying equipment and automatically positioned, and then the slurry is sprayed on the second substrate, the slurry comprising a mixture of graphite oxide, tin oxide, a surfactant, a crosslinking agent and a solvent, by weight
  • the number includes 7 parts of graphite oxide, 13 parts of tin oxide, 30 parts of a surfactant, 26 parts of a crosslinking agent, and 40 parts of water.
  • the viscosity of the slurry was 40 cP.
  • the distance between the spray gun and the surface of the second substrate is 40 cm, the spraying pressure is 1.0 MPa, the working environment is a dust-free space (100 grades), the temperature is 30 ° C, and the humidity is 60%. After spraying, it is baked in a drying oven, baked at a temperature of 120 ° C for 20 min, and cooled to obtain a high-resistance film.
  • the thickness of the high resistance film was measured by a film thickness meter to be 50 nm.
  • the transmittance of the high resistance film was 96% using a spectrometer.
  • the film hardness was 6H.
  • the touch screen further includes a protective cover, a polarizing plate, and a lead wire, which are generally used in the industry, and are not limited herein.
  • the resistance of the high resistance film was measured by a resistance meter to be 5 ⁇ 10 9 ⁇ /cm 2 , indicating that the high resistance film has good electrical properties.
  • a resistance meter 5 ⁇ 10 9 ⁇ /cm 2
  • the resistance change rate of the high resistance film was 5%, indicating good moisture resistance.
  • the alcohol was immersed for 5 minutes, and the resistance change rate of the high resistance film was 10%.
  • the oven was baked at 60 ° C for 240 hours, and the resistivity was changed to 5%, indicating good heat resistance.
  • ITO square resistance of touch sensing layer 150 ⁇ , film thickness
  • the above-mentioned in-cell touch panel with a high resistance film is highly resistant to oxidation, has good electrical conductivity and light transmittance, and has good antistatic effect.
  • An in-cell touch screen with a high resistance film is prepared by the following steps:
  • TFT substrate thin film transistor substrate
  • first substrate first substrate
  • second substrate first substrate
  • inductive circuit layer on the surface of the thin film transistor substrate
  • the material of the sensing circuit is ITO
  • forming an inductive circuit on the surface of the thin film transistor substrate after exposure, development, etching, etc. and forming a liquid crystal layer on the thin film transistor substrate, and laminating Color filter, a plate made.
  • a touch sensing layer is formed on the surface (second substrate) of the other glass substrate, and the material of the touch sensing layer is ITO, which is a b plate.
  • the substrate is fed onto the surface of the spraying equipment and automatically positioned, and then the slurry is sprayed on the second substrate, the slurry comprising a mixture of graphite oxide, tin oxide, a surfactant, a crosslinking agent and a solvent, by weight
  • the number includes 5 parts of graphite oxide, 12 parts of tin oxide, 28 parts of a surfactant, 15 parts of a crosslinking agent, and 36 parts of water.
  • the viscosity of the slurry was 38 cP.
  • the distance between the spray gun and the surface of the second substrate is 40 cm, the spraying pressure is 1.0 MPa, the working environment is a dust-free space (100 grades), the temperature is 25 ° C, and the humidity is 55%. After spraying, it is baked in a drying oven, baked at a temperature of 110 ° C for 10 min, and cooled to obtain a high-resistance film.
  • the thickness of the high resistance film was measured by a film thickness meter to be 50 nm.
  • the light transmittance of the high resistance film was 97% by using a spectrometer.
  • the film hardness was 6H.
  • the touch screen further includes a protective cover, a polarizing plate, and a lead wire, which are generally used in the industry, and are not limited herein.
  • the resistance of the high resistance film was measured by a resistance meter to be 5 ⁇ 10 9 ⁇ /cm 2 , indicating that the high resistance film has good electrical properties.
  • a resistance meter 5 ⁇ 10 9 ⁇ /cm 2
  • the resistance change rate of the high resistance film was 5%, indicating good moisture resistance.
  • the alcohol was immersed for 5 minutes, and the resistance change rate of the high resistance film was 10%.
  • the oven was baked at 60 ° C for 240 hours, and the resistivity was changed to 10%, indicating good heat resistance.
  • ITO square resistance of touch sensing layer 150 ⁇ , film thickness
  • the above-mentioned in-cell touch panel with a high resistance film is strong in stability, is not easily oxidized, and has a good guide. Electrical and light transmission, anti-static effect is good.

Abstract

一种具有高阻膜（70）的内嵌式触摸屏（100），包括依次层叠的第一基板（10）、薄膜晶体管基板（20）、液晶层（30）、彩色滤光片（40）、触摸感应层（50）、第二基板（60）及高阻膜（70），薄膜晶体管基板（20）朝向液晶层（30）的表面上设有多条相互绝缘的感应线路，薄膜晶体管基板（20）与触摸感应层（50）配合使得触摸面板功能嵌入到液晶像素中，降低触摸屏（100）的厚度。通过在第二基板（60）远离触摸感应层（50）的表面设置高阻膜（70），并将高阻膜（70）与薄膜晶体管基板（20）电连接，高阻膜（70）可以将薄膜晶体管基板（20）产生的静电即时释放，起到消除静电作用，降低触摸传感器之间的相互干扰，从而提高内嵌式触摸屏（100）的触控灵敏度。

Description

具有高阻膜的内嵌式触摸屏及显示装置 技术领域
本发明涉及显示器件领域，特别涉及一种具有高阻膜的内嵌式触摸屏及显示装置。
背景技术
触摸屏是手机、平板电脑、电子书等电子设备的重要组成部分。目前，触摸屏按照组成结构一般可以分为：外嵌式(On-Cell)和内嵌式(In-Cell)。外嵌式(On-Cell)是指将触摸面板嵌入到显示屏的彩色滤光片基板和偏光片之间的方法，即在液晶面板上配触摸传感器，由于多了一层触控层，厚度较厚，触控时容易产生的颜色不均等问题。内嵌式是指将触摸面板功能嵌入到液晶像素中的方法，即在显示屏内部嵌入触摸传感器功能，可以减薄模组整体的厚度，又可以大大降低触摸屏的制作成本，受到各大面板厂家青睐。
然而，内嵌式触摸屏通常需要在薄膜晶体管阵列基板上的像素内部嵌入触摸传感器，触摸传感器之间容易相互干扰，从而导致触控灵敏度较低。
发明内容
基于此，有必要提供一种触控灵敏度较高的内嵌式触摸屏及显示装置。
一种具有高阻膜的内嵌式触摸屏，包括依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层、第二基板及高阻膜，所述薄膜晶体管基板朝向所述液晶层的表面上设有多条相互绝缘的感应线路，所述高阻膜形成于所述第二基板远离所述触摸感应层的表面，所述高阻膜与所述薄膜晶体管基板电连接。
在其中一个实施方式中，所述高阻膜的材料包括氧化石墨、氧化锡、表面活性剂和交联剂的混合物。
在其中一个实施方式中，所述高阻膜的材料按照重量份数计包括4份～7份 的氧化石墨、10份～13份的氧化锡、25份～30份的表面活性剂和10份～26份的交联剂。
在其中一个实施方式中，所述交联剂为氮丙啶交联剂。
在其中一个实施方式中，所述高阻膜的厚度为30nm～50nm。
在其中一个实施方式中，还包括偏光层，所述偏光层层叠于所述高阻膜远离所述第二基板的表面上。
在其中一个实施方式中，还包括保护盖板，所述保护盖板层叠于所述偏光层远离所述高阻膜的表面上。
在其中一个实施方式中，所述具有高阻膜的内嵌式触摸屏的厚度为0.6mm～0.8mm。
在其中一个实施方式中，所述感应线路的材料为ITO。
一种显示装置，包括上述任一项所述的具有高阻膜的内嵌式触摸屏。
上述具有高阻膜的内嵌式触摸屏，包括依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层、第二基板及高阻膜。薄膜晶体管基板朝向液晶层的表面上设有多条相互绝缘的感应线路，薄膜晶体管基板与触摸感应层配合使得触摸面板功能嵌入到液晶像素中，降低触摸屏的厚度。通过在第二基板远离触摸感应层的表面设置高阻膜，并将高阻膜与薄膜晶体管基板电连接。高阻膜可以将薄膜晶体管基板产生的静电即时释放，起到消除静电作用，降低触摸传感器之间的相互干扰，从而提高内嵌式触摸屏的触控灵敏度。
附图说明
图1为一实施方式的具有高阻膜的内嵌式触摸屏的结构示意图；
图2为另一实施方式的具有高阻膜的内嵌式触摸屏的结构示意图。
具体实施方式
下面主要结合具体附图及具体实施例对具有高阻膜的内嵌式触摸屏及其制备方法作进一步详细的说明。
请参阅图1，一实施方式的具有高阻膜的内嵌式触摸屏100，包括依次层叠 的第一基板10、薄膜晶体管基板(TFT基板)20、液晶层30、彩色滤光片40、触摸感应层50、第二基板60及高阻膜70。
薄膜晶体管基板20朝向液晶层30的表面上设有多条相互绝缘的感应线路，高阻膜70形成于第二基板60远离触摸感应层50的表面，高阻膜70与薄膜晶体管基板20电连接。具体的，高阻膜70与薄膜晶体管基板20可通过引线电连接。
薄膜晶体管基板20的朝向液晶层30的表面上设有多条相互绝缘的感应线路，多条相互绝缘的感应线路可以嵌入到液晶层30中。薄膜晶体管基板20与触摸感应层50配合，使得触摸面板功能嵌入到液晶像素中，在显示屏内部嵌入触摸传感器功能，构成In-Cell类型的触摸屏，降低触摸屏的厚度，使得屏幕更加轻薄。通过在第二基板60远离触摸感应层50的表面设置高阻膜70，并将高阻膜70与薄膜晶体管基板20电连接。高阻膜70可以将薄膜晶体管基板20产生的静电即时释放，起到消除静电作用，降低触摸传感器之间的相互干扰，从而提高具有高阻膜的内嵌式触摸屏100的触控灵敏度。
本实施方式中，具有高阻膜的内嵌式触摸屏100的厚度为0.6mm～0.8mm。通过触摸面板功能嵌入到液晶像素中，大大降低触摸屏100的厚度。
具体的，第一基板10和第二基板60可以为玻璃等透光性材料。
具体的，可以先在薄膜晶体管基板20的表面形成一层感应线路层，经过曝光、显影、蚀刻等步骤后在薄膜晶体管基板20的表面形成感应线路。
优选的，感应线路的材料为ITO，当然，感应线路的材料不限于为ITO，也可以为其他导电材料如AZO等。ITO具有良好的导电性和透光性。
具体的，液晶层30的材料可以是是脂肪族、芳香族、硬脂酸等有机物。可采用灌注液晶方法在薄膜晶体管基板20与彩色滤光片40之间形成液晶层30，即将薄膜晶体管基板20与彩色滤光片基板40对组之后，采用毛细原理将液晶吸入形成液晶层。或采用滴下式液晶注入法，先将液晶直接滴在彩色滤光片基板40上，然后再将薄膜晶体管基板20与彩色滤光片40进行对组。
在第二基板60的表面形成触摸感应层50，触摸感应层50的材料可以为ITO，当然，触摸感应层的材料不限于为ITO，也可以为其他导电材料如AZO等。ITO 具有良好的导电性和透光性。
具体的，将触摸感应层50与彩色滤光片40在真空条件下贴合，得到依次层叠的第一基板10、薄膜晶体管基板(TFT基板)20、液晶层30、彩色滤光片40、触摸感应层50及第二基板60。
薄膜晶体管基板20与触摸感应层50配合，使得触摸面板功能嵌入到液晶像素中，在显示屏内部嵌入触摸传感器功能。在IC(integrated circuit，集成电路)的驱动下，达到触摸的功能。
具体的，高阻膜70的材料包括氧化石墨、氧化锡、表面活性剂和交联剂的混合物。
具体的，可以通过丝网印刷、自动喷涂等方法将氧化石墨、氧化锡、表面活性剂和交联剂的混合物印刷或喷涂至第二基板60远离触摸感应层的表面。
本实施方式中，本实施方式中，采用自动喷涂设备将浆料喷涂至第二基板60表面。优选的，喷涂枪离第二基板60表面的距离为20cm～40cm，喷涂压力为0.5MPa～1.5MPa，温度为20℃～30℃，湿度为50％～60％。
具体的，浆料包括氧化石墨、氧化锡、表面活性剂、交联剂及溶剂的混合物。
优选的，浆料按照重量份数计包括4份～7份的氧化石墨、10份～13份的氧化锡、25份～30份的表面活性剂、10份～26份的交联剂及35份～45份的溶剂。
溶剂可以为水或有机溶剂。优选的，浆料的粘度为30cP～40cP。
氧化石墨(Graphite oxide，GO)是一种新型碳素材料，具有优良的吸附性能。氧化锡(SnO2)为一种活性氧化物，具有半导体特性。氧化石墨、氧化锡、表面活性剂及交联剂混合后可得到性能优异的复合材料。氧化锡可改变氧化石墨的表面性质，氧化石墨高孔隙率、大表面积的特点又可提升氧化锡的分散性。各种组分协同作用导致高阻膜70具有优良的吸附性能和电学特性。
氧化石墨、氧化锡、表面活性剂和交联剂的混合物组成的高阻膜70可以将薄膜晶体管基板20产生的静电即时释放，起到消除静电作用，提高触控灵敏度。同时由于其优良的吸附性能，不需要使用粘合剂等即可形成于第二基板60的表面，几乎不会增加具有高阻膜的内嵌式触摸屏100的厚度。
优选的，氧化石墨、氧化锡、表面活性剂和交联剂的混合物按照重量份数计包括4份～7份的氧化石墨、10份～13份的氧化锡、25份～30份的表面活性剂和10份～26份的交联剂。
本实施方式中，氧化石墨、氧化锡、表面活性剂和交联剂的混合物按照重量份数计包括5.5份的氧化石墨、11.5份的氧化锡、27.5份的表面活性剂和18份的交联剂。
具体的，表面活性剂可以为硬脂酸、十二烷基苯磺酸钠、季铵化物、卵磷脂、脂肪酸甘油酯，脂肪酸山梨坦(司盘)、聚山梨酯(吐温)等。
本实施方式中，表面活性剂为美国陶氏公司生产DOW FAX 2A1型表面活性剂。
具体的，交联剂可以为聚乙烯、聚氯乙烯、聚丙烯酸酯、聚烷基丙烯酸酯、苯乙烯、丙烯腈、丙烯酸、甲基丙烯酸、乙二醛、氮丙啶等
本实施方式中，交联剂为氮丙啶交联剂。具体为上海尤恩化工有限公司生产SaC-100型氮丙啶交联剂。
传统的触摸屏一般需要使用一块基板作为承载体，以降低触摸的干扰，但因为增加了一块承载体，产品的厚度增加。叠加后厚度会增加约0.4mm左右，大大增加电子设备(例如手机)的厚度，并且透光性较差，在阳光下反射率较高，直接影响体验效果。同时贴合过程中容易出现问题，降低良率低。这将直接导致成本提高、加工周期长，不适应激励的市场竞争环境。
若采用半导体材料也能提高触摸屏的灵敏度，然而半导体材料价格昂贵，制备工艺复杂，不适于大规模的生产。
本发明的氧化石墨、氧化锡、氮丙啶及阴离子表面活性剂组成的混合物附着力强、导电性能好、透光性好，并且稳定强不易被氧化，制备工艺简单，适于大规模的生产。
优选的，高阻膜70的厚度为30nm～50nm。
优选的，高阻膜70的表面电阻为5×108Ω/cm2～5×109Ω/cm2Ω。
本实施方式中，高阻膜70的透光率≥92％，此处透光率指的是具有高阻膜的内嵌式触摸屏100形成高阻膜70后与形成高阻膜70前的透光率的比值。
一般的，高阻膜70的表面电阻阻值越少，防静电效果越好。但表面电阻阻值越小，容易对内嵌式(in-cell)触屏起到干扰作用，使触摸效果受影响。阻值越大，防静电效果不明显，并且ITO导电性非常强，需要达到较高的阻值时，膜层厚度太薄，起不到防静电的作用。
本发明经过实验表明，高阻膜70的表面电阻为5×108Ω/cm2～5×109Ω/cm2时，既能防静电又不影响触摸效果，并且厚度适宜，具有良好的透光率与导电性，防静电效果好。
请参阅图2，另一实施方式的具有高阻膜的内嵌式触摸屏100，包括依次层叠的第一基板10、薄膜晶体管基板(TFT基板)20、液晶层30、彩色滤光片40、触摸感应层50及第二基板60，还包括偏光层80和保护盖板90。
偏光层80层叠于高阻膜70远离第二基板60的表面上，保护盖板90层叠于偏光层80远离高阻膜70的表面上。
优选的，偏光片90的材料选自乙烯-醋酸乙烯共聚物(EVA)、聚对苯二甲酸乙二醇酯(PET)、聚乙烯醇(PVA)及多羟基胺基聚醚(AP)中的至少一种。
优选的，保护盖板90的材料选自钠钙玻璃、高铝白玻璃、及旭虹高铝玻璃中的至少一种。
具体的，可以在形成高阻膜70后，将触摸面板分割成小片，小片的尺寸一般在4.5寸～6寸左右，适合手机屏幕的大小。将小片清洗后，在高阻膜70上形成偏光层80，再将保护盖板90层叠于偏光层80上。优选的，保护盖板90与偏光层80通过光学胶贴合，保护盖板90可以保护高阻膜70。
一种显示装置，包括上述具有高阻膜的内嵌式触摸屏。这种显示装置具有图像清晰、触控灵敏度等优点。
上述具有高阻膜的内嵌式触摸屏100，包括依次层叠的第一基板10、薄膜晶体管基板20、液晶层30、彩色滤光片40、触摸感应层50及第二基板60。薄膜晶体管基板20朝向液晶层30的表面上设有多条相互绝缘的感应线路，薄膜晶体管基板20与触摸感应层50配合使得触摸面板功能嵌入到液晶像素中，降低触摸屏的厚度。通过在第二基板60远离触摸感应层的表面设置高阻膜70，并将高阻膜70与薄膜晶体管基板20电连接。高阻膜70可以将薄膜晶体管基板20 产生的静电即时释放，起到消除静电作用，降低触摸传感器之间的相互干扰，从而提高内嵌式触摸屏的触控灵敏度。同时，具有高阻膜的内嵌式触摸屏100厚度较薄，透光性好，制备方法简单。
以下结合具体实施例进行详细说明。
以下实施例中，如无特别说明，未注明具体条件的实验方法，通常按照常规条件。
仪器：自动喷涂设备、干燥炉、清洗机、高阻仪、膜厚仪、分光计等。
试剂：表面活性剂为美国陶氏公司生产DOW FAX 2A1型表面活性剂，交联剂为上海尤恩化工有限公司生产SaC-100型氮丙啶交联剂。
实施例1
一种具有高阻膜的内嵌式触摸屏，由以下步骤制备得到：
(1)在玻璃基板表面(第一基板)上层叠薄膜晶体管基板(TFT基板)，并在薄膜晶体管基板表面形成一层感应线路层，感应线路的材料为ITO，经过曝光、显影、蚀刻等步骤后在薄膜晶体管基板的表面形成感应线路，并在薄膜晶体管基板上形成液晶层，层叠彩色滤光片，制的a板。
(2)在另一玻璃基板表面(第二基板)上形成触摸感应层，触摸感应层的材料为ITO，制的b板。
(3)将a板与b板在真空环境中进行贴合，其中，彩色滤光片与触摸感应层相互贴合，得到依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层及第二基板。
(4)采用自动喷涂设备在第二基板远离触摸感应层的表面形成高阻膜。将基板送进喷涂设备工作台面上，并进行自动定位，然后将浆料喷涂在第二基板上，浆料包括氧化石墨、氧化锡、表面活性剂、交联剂和溶剂的混合物，按照重量份数计包括5.5份的氧化石墨、11.5份的氧化锡、27.5份的表面活性剂、18份的交联剂和37.5份水。浆料粘度为35cP。喷涂枪离第二基板表面的距离为30cm，喷涂压力为1.0MPa，作业环境为无尘空间(百级)，温度为25℃，湿度 为55％。喷涂完成后放入干燥炉中烘烤，在温度为115℃条件下烘烤15min，冷却后得到高阻膜。
采用膜厚仪测试高阻膜的厚度为40nm。
采用分光计测试高阻膜的透光率为97.8％。
膜硬度为6H。
当然，触摸屏还包括保护盖板、偏光板、引线的制备，采用业内常用方法即可，在此不做限定。
采用电阻仪测试高阻膜的电阻为5.5×108Ω/cm2。表明高阻膜具有良好的电学性能。采用恒温恒湿箱在90℃，60％湿度240小时烘烤实验，高阻膜的电阻变化率为10％，表明具有良好的耐湿性。酒精浸泡5分钟，高阻膜的电阻变化率为10％。烤箱加垫60℃烘烤240小时，电阻率变化为5％，表明具有良好的耐热性。
触摸感应层的ITO方阻：155Ω，膜厚
Figure PCTCN2016103180-appb-000001
上述具有高阻膜的内嵌式触摸屏稳定性强不易被氧化，并且具有良好的导电性和透光性，防静电效果好。
实施例2
一种具有高阻膜的内嵌式触摸屏，由以下步骤制备得到：
(1)在玻璃基板表面(第一基板)上层叠薄膜晶体管基板(TFT基板)，并在薄膜晶体管基板表面形成一层感应线路层，感应线路的材料为ITO，经过曝光、显影、蚀刻等步骤后在薄膜晶体管基板的表面形成感应线路，并在薄膜晶体管基板上形成液晶层，层叠彩色滤光片，制的a板。
(2)在另一玻璃基板表面(第二基板)上形成触摸感应层，触摸感应层的材料为ITO，制的b板。
(3)将a板与b板在真空环境中进行贴合，其中，彩色滤光片与触摸感应层相互贴合，得到依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层及第二基板。
(4)采用自动喷涂设备在第二基板远离触摸感应层的表面形成高阻膜。将 基板送进喷涂设备工作台面上，并进行自动定位，然后将浆料喷涂在第二基板上，浆料包括氧化石墨、氧化锡、表面活性剂、交联剂和溶剂的混合物，按照重量份数计包括4份的氧化石墨、10份的氧化锡、25份的表面活性剂、10份的交联剂和30份水。浆料粘度为30cP。喷涂枪离第二基板表面的距离为20cm，喷涂压力为0.5MPa，作业环境为无尘空间(百级)，温度为20℃，湿度为50％。喷涂完成后放入干燥炉中烘烤，在温度为110℃条件下烘烤10min，冷却后得到高阻膜。
采用膜厚仪测试高阻膜的厚度为30nm。
采用分光计测试高阻膜的透光率为98％。
膜硬度为6H。
当然，触摸屏还包括保护盖板、偏光板、引线的制备，采用业内常用方法即可，在此不做限定。
采用电阻仪测试高阻膜的电阻为5×108Ω/cm2，表明高阻膜具有良好的电学性能。采用恒温恒湿箱在90℃，60％湿度240小时烘烤实验，高阻膜的电阻变化率为10％，表明具有良好的耐湿性。酒精浸泡5分钟，高阻膜的电阻变化率为20％。烤箱加垫60℃烘烤240小时，电阻率变化为5％，表明具有良好的耐热性。
触摸感应层的ITO方阻：60Ω，膜厚
Figure PCTCN2016103180-appb-000002
上述具有高阻膜的内嵌式触摸屏稳定性强不易被氧化，并且具有良好的导电性和透光性，防静电效果好。
实施例3
一种具有高阻膜的内嵌式触摸屏，由以下步骤制备得到：
(1)在玻璃基板表面(第一基板)上层叠薄膜晶体管基板(TFT基板)，并在薄膜晶体管基板表面形成一层感应线路层，感应线路的材料为ITO，经过曝光、显影、蚀刻等步骤后在薄膜晶体管基板的表面形成感应线路，并在薄膜晶体管基板上形成液晶层，层叠彩色滤光片，制的a板。
(2)在另一玻璃基板表面(第二基板)上形成触摸感应层，触摸感应层的 材料为ITO，制的b板。
(3)将a板与b板在真空环境中进行贴合，其中，彩色滤光片与触摸感应层相互贴合，得到依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层及第二基板。
(4)采用自动喷涂设备在第二基板远离触摸感应层的表面形成高阻膜。将基板送进喷涂设备工作台面上，并进行自动定位，然后将浆料喷涂在第二基板上，浆料包括氧化石墨、氧化锡、表面活性剂、交联剂和溶剂的混合物，按照重量份数计包括7份的氧化石墨、13份的氧化锡、30份的表面活性剂、26份的交联剂和40份水。浆料粘度为40cP。喷涂枪离第二基板表面的距离为40cm，喷涂压力为1.0MPa，作业环境为无尘空间(百级)，温度为30℃，湿度为60％。喷涂完成后放入干燥炉中烘烤，在温度为120℃条件下烘烤20min，冷却后得到高阻膜。
采用膜厚仪测试高阻膜的厚度为50nm。
采用分光计测试高阻膜的透光率为96％。
膜硬度为6H。
当然，触摸屏还包括保护盖板、偏光板、引线的制备，采用业内常用方法即可，在此不做限定。
采用电阻仪测试高阻膜的电阻为5×109Ω/cm2，表明高阻膜具有良好的电学性能。采用恒温恒湿箱在90℃，60％湿度240小时烘烤实验，高阻膜的电阻变化率为5％，表明具有良好的耐湿性。酒精浸泡5分钟，高阻膜的电阻变化率为10％。烤箱加垫60℃烘烤240小时，电阻率变化为5％，表明具有良好的耐热性。
触摸感应层的ITO方阻：150Ω，膜厚
Figure PCTCN2016103180-appb-000003
上述具有高阻膜的内嵌式触摸屏稳定性强不易被氧化，并且具有良好的导电性和透光性，防静电效果好。
实施例4
一种具有高阻膜的内嵌式触摸屏，由以下步骤制备得到：
(1)在玻璃基板表面(第一基板)上层叠薄膜晶体管基板(TFT基板)， 并在薄膜晶体管基板表面形成一层感应线路层，感应线路的材料为ITO，经过曝光、显影、蚀刻等步骤后在薄膜晶体管基板的表面形成感应线路，并在薄膜晶体管基板上形成液晶层，层叠彩色滤光片，制的a板。
(2)在另一玻璃基板表面(第二基板)上形成触摸感应层，触摸感应层的材料为ITO，制的b板。
(3)将a板与b板在真空环境中进行贴合，其中，彩色滤光片与触摸感应层相互贴合，得到依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层及第二基板。
(4)采用自动喷涂设备在第二基板远离触摸感应层的表面形成高阻膜。将基板送进喷涂设备工作台面上，并进行自动定位，然后将浆料喷涂在第二基板上，浆料包括氧化石墨、氧化锡、表面活性剂、交联剂和溶剂的混合物，按照重量份数计包括5份的氧化石墨、12份的氧化锡、28份的表面活性剂、15份的交联剂和36份水。浆料粘度为38cP。喷涂枪离第二基板表面的距离为40cm，喷涂压力为1.0MPa，作业环境为无尘空间(百级)，温度为25℃，湿度为55％。喷涂完成后放入干燥炉中烘烤，在温度为110℃条件下烘烤10min，冷却后得到高阻膜。
采用膜厚仪测试高阻膜的厚度为50nm。
采用分光计测试高阻膜的透光率为97％。
膜硬度为6H。
当然，触摸屏还包括保护盖板、偏光板、引线的制备，采用业内常用方法即可，在此不做限定。
采用电阻仪测试高阻膜的电阻为5×109Ω/cm2，表明高阻膜具有良好的电学性能。采用恒温恒湿箱在90℃，60％湿度240小时烘烤实验，高阻膜的电阻变化率为5％，表明具有良好的耐湿性。酒精浸泡5分钟，高阻膜的电阻变化率为10％。烤箱加垫60℃烘烤240小时，电阻率变化为10％，表明具有良好的耐热性。
触摸感应层的ITO方阻：150Ω，膜厚
Figure PCTCN2016103180-appb-000004
上述具有高阻膜的内嵌式触摸屏稳定性强不易被氧化，并且具有良好的导 电性和透光性，防静电效果好。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种具有高阻膜的内嵌式触摸屏，其特征在于，包括依次层叠的第一基板、薄膜晶体管基板、液晶层、彩色滤光片、触摸感应层、第二基板及高阻膜，所述薄膜晶体管基板朝向所述液晶层的表面上设有多条相互绝缘的感应线路，所述高阻膜形成于所述第二基板远离所述触摸感应层的表面，所述高阻膜与所述薄膜晶体管基板电连接。
  2. 根据权利要求1所述的具有高阻膜的内嵌式触摸屏，其特征在于，所述高阻膜的材料包括氧化石墨、氧化锡、表面活性剂和交联剂的混合物。
  3. 根据权利要求2所述的具有高阻膜的内嵌式触摸屏，其特征在于，所述高阻膜的材料按照重量份数计包括4份～7份的氧化石墨、10份～13份的氧化锡、25份～30份的表面活性剂和10份～26份的交联剂。
  4. 根据权利要求2所述的具有高阻膜的内嵌式触摸屏，其特征在于，所述交联剂为氮丙啶交联剂。
  5. 根据权利要求1所述的具有高阻膜的内嵌式触摸屏，其特征在于，所述高阻膜的厚度为30nm～50nm。
  6. 根据权利要求1所述的具有高阻膜的内嵌式触摸屏，其特征在于，还包括偏光层，所述偏光层层叠于所述高阻膜远离所述第二基板的表面上。
  7. 根据权利要求6所述的具有高阻膜的内嵌式触摸屏，其特征在于，还包括保护盖板，所述保护盖板层叠于所述偏光层远离所述高阻膜的表面上。
  8. 根据权利要求1所述的具有高阻膜的内嵌式触摸屏，其特征在于，所述具有高阻膜的内嵌式触摸屏的厚度为0.6mm～0.8mm。
  9. 根据权利要求1所述的具有高阻膜的内嵌式触摸屏，其特征在于，所述感应线路的材料为ITO。
  10. 一种显示装置，其特征在于，包括权利要求1～9中任一项所述的具有高阻膜的内嵌式触摸屏。
PCT/CN2016/103180 2015-12-04 2016-10-25 具有高阻膜的内嵌式触摸屏及显示装置 WO2017092516A1 (zh)

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