WO2017071412A1 - 基板及其制作方法、显示装置 - Google Patents

基板及其制作方法、显示装置 Download PDF

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WO2017071412A1
WO2017071412A1 PCT/CN2016/098347 CN2016098347W WO2017071412A1 WO 2017071412 A1 WO2017071412 A1 WO 2017071412A1 CN 2016098347 W CN2016098347 W CN 2016098347W WO 2017071412 A1 WO2017071412 A1 WO 2017071412A1
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Prior art keywords
substrate
black matrix
pattern
translucent
tin oxide
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PCT/CN2016/098347
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English (en)
French (fr)
Inventor
白金超
刘耀
郭会斌
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京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Priority to US15/507,122 priority Critical patent/US10197817B2/en
Publication of WO2017071412A1 publication Critical patent/WO2017071412A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0102—Constructional details, not otherwise provided for in this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
    • G09G3/3473—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on light coupled out of a light guide, e.g. due to scattering, by contracting the light guide with external means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
    • G02F1/133565—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements inside the LC elements, i.e. between the cell substrates
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • Embodiments of the present invention relate to a substrate, a method of fabricating the same, and a display device.
  • Embodiments of the present invention provide a substrate, a method for fabricating the same, and a display device, which can be used to solve the problem that the display contrast of the display panel is significantly reduced due to the reflective property of the current metal black matrix.
  • At least one embodiment of the present invention provides a substrate including a substrate substrate, a metal black matrix disposed on the substrate substrate, and an inverse pattern for reducing light reflectance of the metal black matrix,
  • the subtractive pattern is disposed on a side of the metal black matrix near the light exit side of the substrate.
  • the inversion pattern is a translucent inversion pattern, and an orthographic projection of the metal black matrix on the substrate substrate falls into an orthographic projection area of the translucent inversion pattern on the substrate substrate Within the scope.
  • the substrate is an array substrate or a color film substrate.
  • the substrate is an array substrate
  • the step of forming the translucent anti-reflection pattern includes:
  • the metal thin film and the indium tin oxide film layer are patterned by a patterning process to form a metal black matrix and an indium tin oxide conductive pattern;
  • the translucent anti-reflection film and the metal film are patterned by a patterning process to form a translucent anti-reflection pattern and a metal black matrix.
  • the indium tin oxide film layer is treated with a hydrogen plasma for a duration of 0.5 to 2 minutes.
  • Embodiments of the present invention provide a substrate including a substrate and a substrate disposed thereon And a metal black matrix thereon and an anti-reflection pattern for reducing the light reflectivity of the metal black matrix, the anti-reflection pattern being disposed on a side of the metal black matrix adjacent to the light-emitting side of the substrate.
  • the anti-reflection pattern is disposed on the side of the metal black matrix near the light-emitting side of the substrate, so that the reflectance of the metal black matrix to the ambient light can be reduced, the display contrast of the display device including the substrate can be improved, and the quality of the image can be improved.
  • the inversion pattern may be a plurality of bumps disposed on the surface of the metal black matrix.
  • the bumps may be hemispherical or hemispherical, and the bumps may be made of a resin having a certain flexibility or the like. Since a plurality of bumps are provided on the surface of the metal black matrix, the surface of the metal black matrix is no longer a flat structure, so that the light reflectance of the metal black matrix can be greatly reduced.
  • the surface of the metal black matrix 111 is provided with an inversion pattern 112A composed of a plurality of bumps.
  • the subtractive graphic can be a translucent subtractive graphic.
  • the orthographic projection of the metal black matrix on the substrate substrate completely falls within the area of the orthographic projection of the translucent inversion pattern on the substrate, that is, the translucent inversion pattern can completely cover the metal black matrix toward the light exit side of the substrate.
  • the surface of the metal black matrix is covered with a highly transparent semi-transparent film layer toward the light-emitting side of the substrate, so that the light reflectance of the metal black matrix can be greatly reduced.
  • the surface of the metal black matrix 111 is provided with a translucent inversion pattern 112B.
  • the orthographic projection of the metal black matrix on the substrate substrate overlaps with the orthographic projection of the translucent inversion pattern on the substrate, that is, the pattern of the metal black matrix is consistent with the translucent inversion pattern, and the translucent inversion pattern is not covered.
  • the metal black matrix and the translucent subtractive pattern can be formed by one patterning process, which can reduce the manufacturing process and thereby reduce the production cost.
  • the translucent anti-reflection pattern is formed of a mixed material of indium tin oxide (ITO) and elemental indium and elemental tin.
  • ITO indium tin oxide
  • the surface of the indium tin oxide can be treated by a hydrogen plasma to form elemental indium and elemental tin on the surface of the indium tin oxide, thereby forming a mixture of indium tin oxide and elemental indium and elemental tin, and the mixture has a high degree of ambiguity.
  • Translucent body It will be apparent that in an embodiment of the invention, Translucent subtractive graphics made of other translucent materials can also be used.
  • the thickness of the metal black matrix ranges from 50 to 200 nm, for example, 50 nm, 100 nm, 150 nm, and 200 nm.
  • the translucent inversion pattern has a thickness in the range of 20-50 nm, for example, 20 nm, 30 nm, 40 nm, 50 nm.
  • the substrate in this embodiment may further include a common electrode, and the common electrode is made of a transparent oxide conductive material such as ITO.
  • the resistance of the transparent oxide conductive material is generally large, which may easily cause signal delay, thereby affecting the display effect.
  • the substrate in this embodiment may further include a common electrode line connected to the common electrode.
  • the common electrode line may be disposed in the same layer as the metal black matrix and formed of the same material, for example, A patterning process is formed to reduce production costs.
  • the substrate in this embodiment may be a color film substrate, that is, the metal black matrix is located on the color film substrate.
  • the substrate in this embodiment may also be an array substrate, that is, the metal black matrix is located on the array substrate.
  • the array substrate can be a COA substrate, that is, the metal black matrix and the color filter unit are disposed on the array substrate, and the COA substrate can reduce the deviation between the pattern corresponding to the array substrate and the color filter substrate when the box is formed, thereby increasing the aperture ratio. , reduce costs and improve product display quality.
  • Another embodiment of the present invention also provides a display device including the substrate in the above embodiment.
  • Another embodiment of the present invention further provides a method of fabricating a substrate, including the following steps:
  • Step 11 providing a substrate substrate
  • Step 12 forming a metal black matrix and an anti-reflection pattern for reducing the light reflectance of the metal black matrix on the base substrate, the anti-reflection pattern being disposed on a side of the metal black matrix near the light-emitting side of the substrate.
  • an anti-reflection pattern is provided on a side of the metal black matrix close to the light-emitting side of the substrate, so that the reflectance of the metal black matrix to ambient light can be reduced, and the display device including the substrate can be improved. Display contrast to improve picture quality.
  • Step 121 depositing a metal thin film and an indium tin oxide film layer
  • Step 122 patterning the metal thin film and the indium tin oxide film layer by using a patterning process to form a metal black matrix and an indium tin oxide conductive pattern;
  • Step 121' depositing an indium tin oxide film layer
  • Step 122 ′ treating the indium tin oxide film layer with a hydrogen plasma to at least partially convert the exposed indium tin oxide conductive material into elemental indium and elemental tin to form a half formed by mixing indium tin oxide and elemental indium and elemental tin. Transparent anti-reflective film.
  • Step 123' depositing a metal film
  • the duration of treatment of the indium tin oxide conductive pattern using a hydrogen plasma is 0.5-2 minutes.
  • a method of fabricating a substrate in an embodiment of the present invention will be described by taking an array substrate in which the substrate is an ADS (Advanced Super-Dimensional Field Conversion Technology) mode as an example.
  • ADS Advanced Super-Dimensional Field Conversion Technology
  • Step 41 As shown in FIG. 4, a pattern of the common electrode 102 is formed on the base substrate 101.
  • an ITO film is first deposited on a common electrode, and then the ITO film is subjected to a photolithography process (for example, exposure, development, etching, etc.) to form a pattern of the common electrode 102.
  • a photolithography process for example, exposure, development, etching, etc.
  • Step 42 As shown in FIG. 5, a pattern of a gate electrode 103, a gate line (not shown), and a gate metal layer common electrode line 104 is formed on the base substrate 101.

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  • Crystallography & Structural Chemistry (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种基板及其制作方法、显示装置。该基板包括衬底基板（101），设置在所述衬底基板（101）上的金属黑矩阵（111）和用于降低所述金属黑矩阵（111）的光反射率的减反图形（112A，112B），所述减反图形（112A，112B）设置于所述金属黑矩阵（111）的靠近所述基板出光侧的一侧。上述减反图形（112A，112B）可降低金属黑矩阵（111）对外界环境光的反射率，从而可提高包含该基板的显示装置的显示对比度，进而可改善画面质量。

Description

基板及其制作方法、显示装置 技术领域
本发明的实施例涉及一种基板及其制作方法、显示装置。
背景技术
显示面板通常包括阵列基板和彩膜基板，彩膜基板又通常包括彩色滤光单元和位于相邻的彩色滤光单元之间的黑矩阵，黑矩阵用于防止相邻的彩色滤光单元之间发生漏光。黑矩阵可以采用金属材料来制作。当采用金属材料制作黑矩阵时，由于金属材料具有一定的光反射率，黑矩阵会反光，从而可能造成显示面板的显示对比度下降，进而影响画面质量。
发明内容
本发明的实施例提供了一种基板及其制作方法、显示装置，该基板可用于解决目前金属黑矩阵存在的易反光的性质带来的显示面板的显示对比度明显下降的问题。
本发明的至少一个实施例提供了一种基板，其包括衬底基板，设置于所述衬底基板上的金属黑矩阵和用于降低所述金属黑矩阵的光反射率的减反图形，所述减反图形设置在所述金属黑矩阵的靠近所述基板出光侧的一侧。
例如，所述减反图形为设置于所述金属黑矩阵的靠近所述基板出光侧的一侧表面上的多个凸点。
例如，所述减反图形为半透明减反图形，所述金属黑矩阵在所述衬底基板上的正投影落入所述半透明减反图形在所述衬底基板上的正投影的区域范围内。
例如，所述金属黑矩阵在所述衬底基板上的正投影与所述半透明减反图形在所述衬底基板上的正投影重叠。
例如，所述半透明减反图形由氧化铟锡、单质铟和单质锡混合形成。
例如，所述金属黑矩阵的厚度范围为50-200nm。
例如，所述半透明减反图形的厚度范围为20-50nm。
例如，所述基板还包括：公共电极以及与所述公共电极连接的公共电极线，所述公共电极线与所述金属黑矩阵设置在同一层且由相同的材料形成。
例如，所述基板为阵列基板或彩膜基板。
本发明的另一个实施例还提供了一种显示装置，包括上述基板。
本发明的另一个实施例还提供了一种基板的制作方法，包括：
提供衬底基板；
在所述衬底基板上形成金属黑矩阵和用于降低所述金属黑矩阵的光反射率的减反图形，所述减反图形设置于所述金属黑矩阵的靠近所述基板出光侧的一侧。
例如，所述减反图形为半透明减反图形，所述金属黑矩阵和所述半透明减反图形通过一次构图工艺形成。
例如，所述半透明减反图形由氧化铟锡、单质铟和单质锡组成的混合材料形成。
例如，所述基板为阵列基板，形成所述半透明减反图形的步骤包括：
沉积金属薄膜和氧化铟锡膜层；
采用一次构图工艺对所述金属薄膜和氧化铟锡膜层进行构图，形成金属黑矩阵和氧化铟锡导电图形；
采用氢气等离子体对所述氧化铟锡导电图形进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡组成的混合材料形成的半透明减反图形。
例如，采用氢气等离子体对所述氧化铟锡导电图形进行处理的时长为0.5-2分钟。
例如，所述基板为彩膜基板，形成所述半透明减反图形的步骤包括：
沉积氧化铟锡膜层；
采用氢气等离子体对所述氧化铟锡膜层进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡混合形成的半透明减反薄膜；
沉积金属薄膜；
采用一次构图工艺对所述半透明减反薄膜和金属薄膜进行构图，形成半透明减反图形和金属黑矩阵。
例如，采用氢气等离子体对所述氧化铟锡膜层进行处理的时长为0.5-2分钟。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明实施例中一种基板的俯视图；
图2为图1中所示基板的剖视图；
图3为本发明实施例中另一种基板的剖视图；
图4-11为本发明实施例中ADS模式的阵列基板的制作方法的过程示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
本发明的实施例提供一种基板，包括衬底基板以及设置于该衬底基板 上的金属黑矩阵和用于降低该金属黑矩阵的光反射率的减反图形，该减反图形设置于该金属黑矩阵的靠近该基板出光侧的一侧。
例如，金属黑矩阵可采用金属、金属合金或金属氧化物等材料制成，该金属可以为钼、铬、铝、钛或铜等。
在金属黑矩阵靠近基板出光侧的一侧设置减反图形，可以降低金属黑矩阵对外界环境光的反射率，可以提高包含该基板的显示装置的显示对比度，进而可以改善画面的质量。
例如，该减反图形可以采用多种结构，下面举例进行说明。
例如，减反图形可以为设置于金属黑矩阵表面的多个凸点，例如，该凸点可以为半球状或类半球状，凸点可以采用具有一定柔韧性的树脂等材料制成。由于在金属黑矩阵的表面设置了多个凸点，金属黑矩阵的表面不再是平整的结构，从而可大大降低金属黑矩阵的光反射率。
例如，如图1和图2所示，该金属黑矩阵111表面设置有由多个凸点构成的减反图形112A。
例如，该减反图形可以为半透明减反图形。例如，金属黑矩阵在衬底基板上的正投影完全落入半透明减反图形在衬底基板上的正投影区域范围内，即半透明减反图形可完全覆盖住金属黑矩阵朝向基板出光侧的表面，由于金属黑矩阵朝向基板出光侧的表面覆盖有模糊度较高的半透明膜层，从而可以大大地降低金属黑矩阵的光反射率。
例如，如图3所示，金属黑矩阵111的表面设置有半透明减反图形112B。
例如，金属黑矩阵在衬底基板上的正投影与半透明减反图形在衬底基板上的正投影重叠，即金属黑矩阵的图形与半透明减反图形一致，半透明减反图形不覆盖除金属黑矩阵之外的其他区域，从而不影响基板的开口率，另一方面，金属黑矩阵和半透明减反图形可以通过一次构图工艺形成，可以减少制作工序，从而降低生产成本。
例如，该半透明减反图形由氧化铟锡(ITO)和单质铟、单质锡组成的混合材料形成。
例如，可通过氢气等离子体对氧化铟锡的表面进行处理，在氧化铟锡的表面形成单质铟和单质锡，从而形成氧化铟锡和单质铟、单质锡的混合物，该混合物为模糊度较高的半透明体。很显然，在本发明的实施例中， 也可以采用其他半透明材料制成的半透明减反图形。
例如，该金属黑矩阵的厚度范围为50-200nm，例如，50nm，100nm，150nm，200nm。
例如，该半透明减反图形的厚度范围为20-50nm，例如，20nm，30nm，40nm，50nm。
本实施例中的基板还可以包括公共电极，公共电极采用ITO等透明氧化物导电材料制成，透明氧化物导电材料的电阻通常较大，容易造成信号延迟，从而影响显示效果。为降低公共电极的电阻，本实施例中的基板还可以包括与公共电极连接的公共电极线，例如，该公共电极线可以与金属黑矩阵设置在同一层且由相同的材料形成，例如，通过一次构图工艺形成，从而降低生产成本。
本实施例中的基板可以为彩膜基板，即金属黑矩阵位于彩膜基板上，当然，本实施例中的基板也可以为阵列基板，即金属黑矩阵位于阵列基板上。该阵列基板可以为COA基板，即金属黑矩阵和彩色滤光单元均设置于阵列基板上，COA基板能够减小成盒时阵列基板与彩膜基板对应的图形之间的偏差，从而提高开口率，降低成本，提高产品显示品质。
本发明的另一实施例还提供一种显示装置，包括上述实施例中的基板。
本发明的另一实施例还提供一种基板的制作方法，包括以下步骤：
步骤11：提供衬底基板；
步骤12：在衬底基板上形成金属黑矩阵和用于降低金属黑矩阵的光反射率的减反图形，该减反图形设置于金属黑矩阵的靠近基板出光侧的一侧。
在通过上述方法制作的基板中，在金属黑矩阵靠近基板出光侧的一侧设置有减反图形，从而可降低金属黑矩阵对外界环境光的反射率，进而可提高包含该基板的显示装置的显示对比度，来改善画面质量。
例如，该减反图形为半透明减反图形，金属黑矩阵和半透明减反图形通过一次构图工艺形成，从而可降低生产成本。
例如，半透明减反图形由氧化铟锡和单质铟、单质锡混合形成。
当半透明减反图形由氧化铟锡和单质铟、单质锡组成的混合材料形成，且该半透明减反图形和金属黑矩阵均位于下基板(阵列基板)上时，形成该半透明减反图形的步骤还可以包括：
步骤121：沉积金属薄膜和氧化铟锡膜层；
步骤122：采用一次构图工艺对金属薄膜和氧化铟锡膜层进行构图，形成金属黑矩阵和氧化铟锡导电图形；
步骤123：采用氢气等离子体对所述氧化铟锡导电图形进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡组成的混合材料形成的半透明减反图形。
当半透明减反图形由氧化铟锡和单质铟、单质锡组成的混合材料形成，且该半透明减反图形和金属黑矩阵均位于上基板上时，形成该半透明减反图形的步骤可以包括：
步骤121’：沉积氧化铟锡膜层；
步骤122’：采用氢气等离子体对氧化铟锡膜层进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡混合形成的半透明减反薄膜。
步骤123’：沉积金属薄膜；
步骤124’：采用一次构图工艺对半透明减反薄膜和金属薄膜进行构图，形成半透明减反图形和金属黑矩阵。
即，先对氧化铟锡膜层进行氢气等离子体处理，然后再进行构图。
例如，采用氢气等离子体对氧化铟锡导电图形进行处理的时长为0.5-2分钟。
例如，以基板为ADS(高级超维场转换技术)模式的阵列基板为例，对本发明实施例中的基板的制作方法进行说明。
如图4-11所示，本发明实施例中ADS模式的阵列基板的制作方法包括以下步骤：
步骤41：如图4所示，在衬底基板101上形成公共电极102的图形。
例如，首先在公共电极上沉积ITO薄膜，然后对ITO薄膜进行光刻工艺(例如，曝光、显影和刻蚀等)形成公共电极102的图形。
例如，衬底基板101由玻璃形成。
步骤42：如图5所示，在衬底基板101上形成栅电极103、栅线(图中未示出)和栅金属层公共电极线104的图形。
步骤43：如图6所示，形成栅绝缘层105、有源层106、源电极107、漏电极108、数据线(图中未示出)以及源漏金属层公共电极线109的图 形，其中，源电极107、漏电极108、数据线以及源漏金属层公共电极线109通过一次构图工艺形成。
步骤44：如图7所示，形成钝化层110，并在栅金属层公共电极线104、漏电极108以及源漏金属层公共电极线109上方形成过孔。
步骤45：如图8所示，依次沉积金属钼薄膜111’和氧化铟锡薄膜112’；
步骤46：如图9所示，采用光刻工艺，对金属钼薄膜111’和氧化铟锡薄膜112’进行光刻，形成金属黑矩阵111的图形、氧化铟锡导电图形112以及用于连接栅金属层公共电极线104和源漏金属层公共电极线109的公共电极线113的图形，其中，公共电极线113与金属黑矩阵111设置在同一层且由相同的材料形成；
步骤47：如图10所示，在等离子体增强化学气相沉积设备中，采用氢气等离子体对氧化铟锡导电图形112进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡混合形成的半透明减反图形112B。
步骤48：如图11所示，形成像素电极114的图形，像素电极114与漏电极108通过过孔连接。
上述实施例是以ADS模式的阵列基板为例对本发明的基板的制作方法进行说明的，当然，本发明实施例的基板还可以为TN(扭曲向列型液晶)、VA(垂直配向型)等显示模式的基板，其制作方法可参考上述中以ADS模式的阵列基板为例的描述，在此不再赘述。
本发明的实施例提供的一种基板及其制作方法、显示装置，至少具有以下有益效果：
在金属黑矩阵靠近基板出光侧的一侧设置减反图形，可降低金属黑矩阵对外界环境光的反射率，可提高包含该基板的显示装置的显示对比度，进而可改善画面质量。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
本申请要求于2015年10月30日递交的中国专利申请第201510725238.5号的优先权，在此全文引用上述中国专利申请公开的 内容以作为本申请的一部分。

Claims (17)

  1. 一种基板，包括：衬底基板，设置于所述衬底基板上的金属黑矩阵和用于降低所述金属黑矩阵的光反射率的减反图形，所述减反图形设置在所述金属黑矩阵的靠近所述基板出光侧的一侧。
  2. 根据权利要求1所述的基板，其中，所述减反图形为设置于所述金属黑矩阵的靠近所述基板出光侧的一侧表面上的多个凸点。
  3. 根据权利要求1所述的基板，其中，所述减反图形为半透明减反图形，所述金属黑矩阵在所述衬底基板上的正投影落入所述半透明减反图形在所述衬底基板上的正投影的区域范围内。
  4. 根据权利要求3所述的基板，其中，所述金属黑矩阵在所述衬底基板上的正投影与所述半透明减反图形在所述衬底基板上的正投影重叠。
  5. 根据权利要求3或4所述的基板，其中，所述半透明减反图形由氧化铟锡、单质铟和单质锡混合形成。
  6. 根据权利要求1-4中任一项所述的基板，其中，所述金属黑矩阵的厚度范围为50-200nm。
  7. 根据权利要求3-5中任一项所述的基板，其中，所述半透明减反图形的厚度范围为20-50nm。
  8. 根据权利要求1所述的基板，还包括：公共电极以及与所述公共电极连接的公共电极线，所述公共电极线与所述金属黑矩阵设置在同一层且由相同的材料形成。
  9. 根据权利要求1-8中任一项所述的基板，其中，所述基板为阵列基板或彩膜基板。
  10. 一种显示装置，包括如权利要求1-9中任一项所述的基板。
  11. 一种基板的制作方法，包括：
    提供衬底基板；
    在所述衬底基板上形成金属黑矩阵和用于降低所述金属黑矩阵的光反射率的减反图形，所述减反图形设置于所述金属黑矩阵的靠近所述基板出光侧的一侧。
  12. 根据权利要求11所述的基板的制作方法，其中，所述减反图形为半透明减反图形，所述金属黑矩阵和所述半透明减反图形通过一次构图工 艺形成。
  13. 根据权利要求12所述的基板的制作方法，其中，所述半透明减反图形由氧化铟锡、单质铟和单质锡组成的混合材料形成。
  14. 根据权利要求13所述的基板的制作方法，其中，所述基板为阵列基板，形成所述半透明减反图形的步骤包括：
    沉积金属薄膜和氧化铟锡膜层；
    采用一次构图工艺对所述金属薄膜和所述氧化铟锡膜层进行构图，形成金属黑矩阵和氧化铟锡导电图形；
    采用氢气等离子体对所述氧化铟锡导电图形进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡组成的混合材料形成的半透明减反图形。
  15. 根据权利要求14所述的基板的制作方法，其中，采用氢气等离子体对所述氧化铟锡导电图形进行处理的时长为0.5-2分钟。
  16. 根据权利要求13所述的基板的制作方法，其中，所述基板为彩膜基板，形成所述半透明减反图形的步骤包括：
    沉积氧化铟锡膜层；
    采用氢气等离子体对所述氧化铟锡膜层进行处理，将裸露的氧化铟锡导电材料至少部分转换为单质铟和单质锡，形成由氧化铟锡和单质铟、单质锡混合形成的半透明减反薄膜；
    沉积金属薄膜；
    采用一次构图工艺对所述半透明减反薄膜和所述金属薄膜进行构图，形成半透明减反图形和金属黑矩阵。
  17. 根据权利要求16所述的基板的制作方法，其中，采用氢气等离子体对所述氧化铟锡膜层进行处理的时长为0.5-2分钟。
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