WO2017068659A1 - 半導体ウェハの裏面研削加工用表面保護粘着テープおよび半導体ウェハの研削加工方法 - Google Patents
半導体ウェハの裏面研削加工用表面保護粘着テープおよび半導体ウェハの研削加工方法 Download PDFInfo
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- WO2017068659A1 WO2017068659A1 PCT/JP2015/079665 JP2015079665W WO2017068659A1 WO 2017068659 A1 WO2017068659 A1 WO 2017068659A1 JP 2015079665 W JP2015079665 W JP 2015079665W WO 2017068659 A1 WO2017068659 A1 WO 2017068659A1
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- Prior art keywords
- semiconductor wafer
- grinding
- adhesive tape
- surface protective
- mass
- Prior art date
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- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 229920006226 ethylene-acrylic acid Polymers 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- DKGCZVJEVNZACI-UHFFFAOYSA-N n-[[5-[[bis(oxiran-2-ylmethyl)amino]methyl]-5-methylcyclohexa-1,3-dien-1-yl]methyl]-1-(oxiran-2-yl)-n-(oxiran-2-ylmethyl)methanamine Chemical compound C1C(CN(CC2OC2)CC2OC2)=CC=CC1(C)CN(CC1OC1)CC1CO1 DKGCZVJEVNZACI-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- AAYRWMCIKCRHIN-UHFFFAOYSA-N propane-1-sulfonic acid;prop-2-enamide Chemical compound NC(=O)C=C.CCCS(O)(=O)=O AAYRWMCIKCRHIN-UHFFFAOYSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940113165 trimethylolpropane Drugs 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000004711 α-olefin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Definitions
- the present invention relates to a surface protective pressure-sensitive adhesive tape for back-grinding of a semiconductor wafer used for processing of a semiconductor device, in particular, a surface protective pressure-sensitive adhesive tape for back-grinding of a semiconductor wafer suitable for use in back-grinding of a semiconductor wafer, and the same
- the present invention relates to a method for processing a used semiconductor wafer.
- the back surface grinding / polishing is performed to form a pattern on the surface of the semiconductor wafer, and then to make the back surface of the semiconductor wafer have a predetermined thickness.
- a surface protection adhesive tape for semiconductor processing is attached to the surface of the semiconductor wafer, and the back surface of the semiconductor wafer is ground in that state.
- a surface protective adhesive tape for semiconductor processing for example, there is one in which an adhesive layer mainly composed of an acrylic polymer is provided on a polyolefin base resin film such as an ethylene-vinyl acetate copolymer (for example, Patent Document 1). reference).
- the semiconductor wafer is thinned to a predetermined thickness by backside grinding, and then a dicing die bond sheet in which an adhesive and an adhesive (adhesive sheet for die bonding) are previously laminated on a base material is a semiconductor wafer back side (grind surface)
- a dicing die bond sheet in which an adhesive and an adhesive (adhesive sheet for die bonding) are previously laminated on a base material is a semiconductor wafer back side (grind surface)
- the semiconductor wafer is cut in a lump and is made into chips. Thereafter, a plurality of chips are laminated, and the substrate and the chip are wire-connected and then sealed with a resin to become a product (see, for example, Patent Document 2).
- the surface protective adhesive tape for back grinding of the semiconductor wafer is adhered to the chuck table while being bonded to the surface of the semiconductor wafer, and the semiconductor wafer is bonded after the dicing die bond sheet is bonded.
- the surface protective adhesive tape for back grinding is peeled off.
- it may heat at higher temperature (about 80 degreeC) in recent years at the time of bonding of a dicing die-bonding sheet.
- the surface protective adhesive tape for back grinding of a semiconductor wafer to be bonded to the semiconductor wafer surface is generally colored for bonding identification.
- a coloring method there are a method of coloring a base film and a method of coloring an adhesive. From the viewpoint of surface contamination on a semiconductor wafer, it is generally colored on a base film that does not directly contact the semiconductor wafer. Is.
- the shape of the semiconductor wafer also changes.
- the semiconductor wafer 8 had large cuts 7 called orientation flats (see FIG. 3 to be described later).
- semiconductor wafers 5 having a diameter of 8 inches or more those having a small notch 6 called a notch (see FIG. 2 described later) have become mainstream.
- it has become difficult to read the position of the semiconductor wafer which has been easy so far.
- the surface protective adhesive tape for back surface grinding of the semiconductor wafer is not bonded to the outside of the orientation flat 7, whereas in the case of the semiconductor wafer having the notch, the semiconductor wafer covers the notch 6.
- the surface protection tape for back surface grinding is bonded. For this reason, the color of the surface protective tape for back grinding of a semiconductor wafer has a great influence on the sensor recognition.
- the present invention solves the problems peculiar to the semiconductor wafer having the notches as described above. Specifically, the present invention solves the above-described problems, and does not cause a sensor recognition problem even when applied to a semiconductor wafer that requires thin film grinding in a back surface grinding process such as a silicon wafer. And it aims at providing the surface protection adhesive tape for back surface grinding of a semiconductor wafer which is excellent in workability, and the grinding method of a semiconductor wafer using the same by having bonding visibility and heat resistance.
- the present inventors set the roughness of the back surface of the tape within a specific range and the total light transmittance of the tape at a specific wavelength within a specific range, thereby solving the above problem. It has been found that it is possible to improve workability without causing a sensor recognition error, having bonding visibility.
- various surface roughnesses for example, centerline average roughness Ra, etc.
- Rz the surface roughness defined by Rz
- the total light transmittance at a wavelength of 500 to 600 nm of the surface protective adhesive tape for back grinding of the semiconductor wafer is 40 to 80%
- the difference between the color difference ( ⁇ EM) of the mirror wafer and the color difference ( ⁇ ET) when the surface protective adhesive tape for back grinding of the semiconductor wafer is bonded to the mirror wafer is ⁇ ET ⁇ EM> 6.5
- a surface protective pressure-sensitive adhesive tape for grinding a back surface of a semiconductor wafer characterized in that it is used in a step of grinding a back surface of a semiconductor wafer by bonding it to the surface of a semiconductor wafer having a notch.
- the base material contains a pigment selected from a phthalocyanine pigment, a naphthalocyanine pigment, an indanthrone pigment, an indanthrene pigment, and a triarylcarbonium pigment.
- the substrate is a single layer or a plurality of layers, and the melting point of the base resin on the outermost layer on the side where the adhesive layer is not formed is 85 ° C. or higher.
- the surface protective pressure-sensitive adhesive tape for back grinding of the semiconductor wafer is provided with a base material and an adhesive layer on one surface side of the base material,
- the total light transmittance at a wavelength of 500 to 600 nm of the surface protective adhesive tape for back grinding of the semiconductor wafer is 40 to 80%
- the difference between the color difference ( ⁇ EM) of the mirror wafer and the color difference ( ⁇ ET) when the surface protective adhesive tape for back grinding of the semiconductor wafer is bonded to the mirror wafer is ⁇ ET ⁇ EM> 6.5
- the surface protective pressure-sensitive adhesive tape for back surface grinding of a semiconductor wafer of the present invention (hereinafter also simply referred to as surface protective pressure-sensitive adhesive tape) has bonding visibility in processing of a semiconductor wafer such as a back surface grinding process of a silicon wafer.
- the silicon wafer having a notch has sensor recognizability and excellent heat resistance. Therefore, by using the surface protective pressure-sensitive adhesive tape for back grinding of a semiconductor wafer according to the present invention, the efficiency of back grinding of the semiconductor wafer can be increased and workability can be improved.
- FIG. 1 is a cross-sectional view showing an embodiment of a surface protective adhesive tape for back grinding of a semiconductor wafer according to the present invention.
- FIG. 2 is a plan view showing an example of a semiconductor wafer 5 having a notch 6 as a sensor recognition unit.
- FIG. 3 is a plan view showing an example of a semiconductor wafer 8 having an orientation flat 7 as a sensor recognition unit.
- the surface protective adhesive tape 3 for back grinding of a semiconductor wafer according to the present invention is composed of a base material 1 and an adhesive layer 2 provided on at least one surface of the base material. Yes.
- the surface opposite to the surface in contact with the adhesive layer 2 is a surface (back surface) 11 on which the pressure-sensitive adhesive layer of the substrate is not formed, and is the most bonded surface to the semiconductor wafer 4. This is the surface that becomes the outer surface.
- the surface protective adhesive tape 3 for grinding the back surface of the semiconductor wafer is bonded to the surface (front surface) of the semiconductor wafer 5 having the notch 6 shown in FIG.
- the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer according to the present invention may be in a form in which the base material 1 and the pressure-sensitive adhesive layer 2 are cut (precut) into a predetermined shape in advance according to the use process or apparatus.
- seat which is not cut well in roll shape may be sufficient.
- the predetermined shape includes, for example, a circular shape that has the same diameter as the semiconductor wafer 5 and covers the notch 6 portion, can protect the integrated circuit of the semiconductor wafer, can grind the back surface of the semiconductor wafer, and Any shape may be used as long as the effects of the invention are not impaired.
- the numerical value range represented by “to” includes the preceding and following numerical values.
- the main purpose of the substrate 1 (hereinafter also referred to as a substrate film) used in the present invention is to protect the semiconductor wafer from impacts when grinding the back surface of the semiconductor wafer, and is particularly resistant to water washing and the like. It is important to have the property and the retention of processed parts. Examples of such a substrate 1 include those described in JP-A No. 2004-186429.
- resin of the base material 1 used by this invention what is normally used with an adhesive tape can be used.
- examples include engineering plastics such as polycarbonate and polymethyl methacrylate, and thermoplastic elastomers such as polyurethane, styrene-ethylene-butene, and pentene copolymers.
- a resin selected from these groups may be used in a single layer or a multilayer, or a mixture of two or more selected from these groups may be used in a single layer or a multilayer.
- Rz is less than 0.7 ⁇ m, problems such as incapability of production occur because blocking occurs during application of the pressure-sensitive adhesive or film formation of the substrate 1.
- Rz exceeds 5.0 ⁇ m, dust during grinding adheres to the tape back surface 11 and sensor recognition cannot be performed.
- Rz is preferably 1.0 ⁇ m or more and less than 5.0, more preferably 1.0 to 4.9 ⁇ m, further preferably 1.0 to 4.5 ⁇ m, and 1.0 to 3.
- the roughness of the substrate back surface 11 can be set to an arbitrary value by controlling the roughness of the cooling roll used when the substrate 1 is formed into a film. Resin that has obtained fluidity by heating is extruded and then cooled by a cooling roll to form a film. A metal roll or rubber roll is often used for cooling the resin. For example, when a rubber roll is used, the roughness of the substrate back surface 11 can be adjusted by mixing silicon particles with rubber in order to impart releasability and arbitrarily adjusting the particle diameter of the silicon particles. As described above, when the roughness is controlled by the cooling roll, the surface roughness can be uniformly applied to the entire surface of the substrate 1 on which the pressure-sensitive adhesive layer 2 is not formed.
- the melting point of the base resin on the outermost layer on the side where the pressure-sensitive adhesive layer 2 is not formed in the base 1 is preferably 85 ° C. or higher, more preferably 95 ° C. or higher, from the viewpoint of preventing fusion to the chuck table. 100 degreeC or more is further more preferable, and 110 degreeC or more is especially preferable.
- fusing point is not specifically limited, Actually, it is 200 degrees C or less, More preferably, it is 180 degrees C or less.
- the base material of the outermost layer on the side where the pressure-sensitive adhesive layer 2 is not formed is a single layer when the base material 1 is a single layer, and an adhesive when the base material 1 is a multilayer. It means a base material layer that is located farthest from the agent layer 2.
- a resin containing at least vinyl acetate as a copolymer component is preferably used.
- the vinyl acetate component content is preferably 1.9 to 10.5% by mass.
- the copolymer component combined with vinyl acetate include olefins such as ethylene. Further, it may be a binary copolymer or a ternary or higher copolymer.
- the resin made of a copolymer may be any of a random copolymer, a block copolymer, an alternating copolymer, and a graft copolymer.
- EVA ethylene-vinyl acetate copolymer
- the resin of the substrate 1 may be composed of a resin composed of the same copolymer component, or may be laminated with a plurality of resins composed of different copolymer components, or a plurality of resins may be mixed and used. .
- the substrate 1 made of a resin composed of the same copolymer component is preferable.
- the surface protective adhesive tape 3 for back grinding of semiconductor wafers is blended with coloring pigments (hereinafter also simply referred to as pigments).
- The may be colored by adding a pigment or dye to the pressure-sensitive adhesive, it is preferably colored by adding a pigment to the substrate 1.
- the pigment is preferably a blue pigment, and examples thereof include a phthalocyanine pigment, a naphthalocyanine pigment, an indanthrone pigment, an indanthrene pigment, and a triarylcarbonium pigment.
- phthalocyanine pigments and naphthalocyanine pigments are preferable, phthalocyanine pigments are more preferable, and copper phthalocyanine blue is particularly preferable.
- the blending amount of the coloring pigment is preferably 0.005 to 1.0 part by mass and more preferably 0.01 to 0.5 part by mass with respect to 100 parts by mass of the resin forming the substrate 1. Moreover, even if it is the same resin, it is more preferable to form a film by extruding it in multiple layers and blend the pigment only on the side where the pressure-sensitive adhesive layer is formed.
- a resin other than a resin containing at least vinyl acetate in the copolymerization component may be used.
- high-density polyethylene hereinafter, HDPE
- polyethylene such as low density polyethylene (hereinafter also referred to as LDPE)
- polyolefin resin such as polypropylene, ethylene-acrylic acid copolymer, ethylene-methacrylic acid copolymer and their metal cross-linked products (ionomer) And the like.
- high-density polyethylene, low-density polyethylene, and polypropylene are preferable.
- a layer containing a resin containing vinyl acetate is provided on the side where the pressure-sensitive adhesive layer is formed.
- the substrate 1 used for the surface protective adhesive tape for back grinding of a semiconductor wafer of the present invention has a melt flow rate (MFR) measured in accordance with JIS K 7210 of 1.0 to 2.9 g / 10. It is preferably a minute, more preferably 1.5 to 2.5 g / 10 minutes, and still more preferably 1.8 to 2.3 g / 10 minutes.
- MFR melt flow rate
- the base material 1 of the surface protective pressure-sensitive adhesive tape 3 for back grinding of the semiconductor wafer can be fused so as to cover the side surface of the semiconductor wafer 5 with heat generated when cutting into a shape. As a result, the interface between the pressure-sensitive adhesive layer 2 and the semiconductor wafer 5 is covered with the base material 1, and seapage can be prevented.
- the fluidity of the base material 1 becomes high, so that the cutter blade contacts a certain point on the outer periphery of the semiconductor wafer 5 when cutting the molten base material 1. Since the time required for this is very short, the resin constituting the base material 1 may be cut once sharply and may not be fused to cover the side surface of the semiconductor wafer 5. On the other hand, if it is less than 1.0 g / 10 minutes, the fluidity of the substrate 1 becomes low, and the interface of the semiconductor wafer 5 may not be covered with the tape.
- the MFR of the base material 1 for example, it is realized by adjusting the copolymerization partner of the resin, the vinyl acetate content, the molecular weight and the distribution thereof, mixing the resins having different MFRs, or combining these methods. can do.
- the resin of the base material 1 used in the present invention may contain a stabilizer, a lubricant, an antioxidant, an antiblocking agent, a plasticizer, a tackifier, a softener, and the like as necessary.
- the thickness of the substrate 1 is not particularly limited and may be set as appropriate, but is preferably 80 to 200 ⁇ m, more preferably 100 to 180 ⁇ m. By setting the thickness within this range, the property of maintaining the form of the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer is excellent, and the workability in handling is improved. If the thickness is too thick, the productivity of the base material 1 may be affected, leading to an increase in manufacturing cost.
- the manufacturing method of the said base material 1 is not specifically limited, It can manufacture by conventional injection
- the material of the pressure-sensitive adhesive used in the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer of the present invention is not particularly limited, and a conventional material can be used. For example, it may be cured by irradiating with radiation so that the adhesiveness is lowered and the semiconductor wafer 5 can be easily peeled off.
- Specific examples include homopolymers containing (meth) acrylic acid esters as constituents, copolymers having (meth) acrylic acid esters as constituents, (meth) acrylic resins, and (meth) acrylic esters. Can do.
- the mass average molecular weight of these resins is preferably 200,000 to 2,000,000, more preferably 300,000 to 1,500,000, and even more preferably 400,000 to 1,200,000.
- the mass average molecular weight is a value obtained by dissolving a 1% solution obtained by dissolving in tetrahydrofuran by gel permeation chromatography (trade name: 150-C ALC / GPC, manufactured by Waters). Is calculated as follows.
- Examples of the monomer component of the polymer containing (meth) acrylic acid ester as a constituent component include, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, isobutyl, amyl, isoamyl, hexyl, heptyl.
- (meth) alkyl acrylate or (meth) alkyl methacrylate having a branched alkyl group may be mentioned. These may be used alone or in combination of two or more.
- the following monomers can be included.
- carboxy group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid, maleic anhydride, itaconic anhydride, etc.
- Acid anhydride monomer 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth) acrylic acid Hydroxyl group-containing monomers such as 8-hydroxyoctyl, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate and (4-hydroxymethylcyclohexyl) methyl (meth) acrylate, styrene sulfonic acid, Sulfonic acid group-containing monomers such as sulfonic acid, 2- (meth) acrylamide-2-methylpropane sulfonic acid, (meth) acrylamide propane sulfonic acid, sulfopropyl (meth) acrylate and (meth) acryloyloxynaphthalene sulfonic acid, Phosphoric acid group-containing monomers such as hydroxye
- the (meth) acrylic ester resin can contain the following polyfunctional monomers as constituent components.
- polyfunctional monomers for example, hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, pentaerythritol di (meth) acrylate, tri Methylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) ) Acrylate, epoxy (meth) acrylate, polyester
- acrylate ester examples include ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, glycidyl acrylate, 2-hydroxyethyl acrylate, and the like.
- curing agents such as what replaced said acrylic acid ester with methacrylic acid ester, for example, can also be used.
- a curing agent described in JP 2007-146104 A can be used.
- Epoxy compounds having two or more epoxy groups in the molecule such as benzene, N, N, N ′, N′-tetraglycidyl-m-xylenediamine, 2,4-tolylene diisocyanate, 2,6-tolylene Tolylene diisocyanate (TDI) such as isocyanate, xylylene diisocyanate (XDI) such as 1,3-xylylene diisocyanate, 1,4-xylylene diisocyanate, or diphenylmethane diisocyanate (MDI) such as diphenylmethane-4,4′
- Two or more isocyanate groups in the molecule of Prepolymers of these isocyanate compounds such as TDI trimethylolpropane adducts, tetramethylol-tri- ⁇ -aziridinylpropionate, trimethylol-tri- ⁇ -aziridinylpropionate,
- Examples of the aziridine compounds having two or more aziridinyl groups in the molecule such as trimethylolpropane-tri- ⁇ -aziridinylpropionate, trimethylolpropane-tri- ⁇ - (2-methylaziridinyl) propionate It is done.
- the content of the curing agent may be adjusted according to the desired adhesive strength, and is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass with respect to 100 parts by mass of the resin component. .
- a photopolymerizable compound and a photopolymerization initiator in the pressure-sensitive adhesive layer 2, it can be cured by irradiating with ultraviolet rays, and the pressure-sensitive adhesive force of the pressure-sensitive adhesive can be reduced.
- a photopolymerizable compound for example, as described in JP-A-60-196956 and JP-A-60-223139, photopolymerization can be carried out in a molecule that can be three-dimensionally reticulated by light irradiation. Low molecular weight compounds having at least two or more carbon-carbon double bonds are widely used.
- trimethylolpropane triacrylate pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6-hexanediol Diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and the like are used.
- a photopolymerization initiator described in JP2007-146104A or JP2004-186429A can be used.
- isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, benzyl methyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane and the like can be used. These may be used alone or in combination of two or more.
- the addition amount of the photopolymerization initiator is preferably 0.1 to 15 parts by mass, more preferably 5 to 10 parts by mass with respect to 100 parts by mass of the resin component.
- a photopolymerizable pressure-sensitive adhesive layer comprising a resin composition containing a polymer having a photopolymerizable carbon-carbon double bond in the polymer, a photopolymerization initiator, and a curing agent.
- the polymer having a carbon-carbon double bond in the polymer include monomers such as (meth) acrylic acid esters having an alkyl group having 4 to 12 carbon atoms, more preferably 8 carbon atoms in the side chain, A (meth) acrylic polymer obtained by homopolymerizing or copolymerizing one or two or more copolymerizable modifying monomers by any method is preferable.
- the photopolymerizable pressure-sensitive adhesive layer formed in this manner is provided with the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer before the surface protective pressure-sensitive adhesive tape 3 for back surface grinding of a semiconductor wafer is peeled off from the surface of the semiconductor wafer 5.
- the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer before the surface protective pressure-sensitive adhesive tape 3 for back surface grinding of a semiconductor wafer is peeled off from the surface of the semiconductor wafer 5.
- a tackifier, a tackifier, a surfactant, an inorganic compound filler, other modifiers, and the like can be blended in the pressure-sensitive adhesive as necessary.
- the thickness of the pressure-sensitive adhesive layer 2 can be appropriately set depending on the adherend to be applied, and is not particularly limited, but is preferably 10 to 60 ⁇ m, more preferably 20 to 50 ⁇ m.
- the pressure-sensitive adhesive layer 2 may have a configuration in which a plurality of layers are laminated.
- the productivity is excellent and the manufacturing cost is reduced. Furthermore, since the adhesive force of the pressure-sensitive adhesive layer 2 does not increase more than necessary, when the pressure-sensitive adhesive layer 2 is peeled after the back surface grinding, the semiconductor wafer 5 may be damaged due to an increase in the peel-off pressure force, Contamination due to the pressure-sensitive adhesive layer 2 does not occur on the surface of the semiconductor wafer 5.
- the surface of the semiconductor wafer 5 has excellent adhesion to the unevenness, and when the back surface of the semiconductor wafer 5 is subjected to grinding processing, chemical treatment, etc., water or chemical liquid enters and damage of the semiconductor wafer 5 or grinding scraps on the surface of the semiconductor wafer 5 Contamination due to chemicals does not occur, the adhesive strength after irradiation is sufficiently lowered, and the semiconductor wafer 5 is not damaged when the adhesive layer 2 is peeled off from the semiconductor wafer 5.
- the pressure-sensitive adhesive layer 2 when the pressure-sensitive adhesive layer 2 is provided on one surface side of the substrate 1, the pressure-sensitive adhesive is known as a roll coater, comma coater, die coater, Mayer bar coater, reverse roll coater, gravure coater or the like.
- a method of forming the pressure-sensitive adhesive layer 2 by coating and drying by the above method can be used.
- Examples of the release film used for the surface protective adhesive tape 3 for back grinding of a semiconductor wafer of the present invention include synthetic resins such as polypropylene and polyethylene terephthalate. It is preferable that the surface is subjected to silicone treatment or the like as necessary.
- the thickness of the release film is usually 10 to 100 ⁇ m. The thickness is preferably 20 to 50 ⁇ m.
- the surface protective pressure-sensitive adhesive tape 3 for grinding a back surface of a semiconductor wafer having excellent adhesion to the surface of the semiconductor wafer, excellent easy peeling at the time of peeling, and also having low contamination. can be obtained. That is, by forming the pressure-sensitive adhesive layer 2 on the one surface side of the base material 1 described above, even when there are irregularities on the surface of the semiconductor wafer, good adhesion to the surface of the semiconductor wafer can be obtained.
- the back surface of the wafer is ground, treated with a chemical solution, or the like, intrusion of grinding water, a chemical solution, or the like is prevented, and damage or contamination of the semiconductor wafer due to these can be prevented.
- the surface protective adhesive tape 3 for back surface grinding of the semiconductor wafer can be peeled off with good workability without damaging the semiconductor wafer. Therefore, the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer according to the present invention can simultaneously achieve low contamination while maintaining excellent adhesion to unevenness and easy peeling at the time of peeling.
- the total light transmittance at a wavelength of 500 to 600 nm of the surface protective adhesive tape 3 for back grinding of a semiconductor wafer of the present invention is 40 to 80%.
- the lower limit of the total light transmittance is preferably 50% or more, more preferably more than 50%, still more preferably 51% or more, and particularly preferably 53% or more.
- the upper limit of the total light transmittance is preferably 70% or less. If the total light transmittance at a wavelength of 500 to 600 nm is less than 40%, it becomes difficult to detect the notch and a sensor recognition error occurs. Further, when the total light transmittance at a wavelength of 500 to 600 nm exceeds 80%, the transparency is high, so that it is difficult to identify whether or not they are bonded.
- the difference between the color difference ( ⁇ EM) of the mirror wafer and the color difference ( ⁇ ET) of the tape-bonded wafer obtained by bonding the surface protective adhesive tape 3 for back grinding of the semiconductor wafer of the present invention to the mirror wafer is ⁇ ET - ⁇ EM> 6.5.
- ⁇ ET ⁇ EM is preferably greater than 7.0, and more preferably greater than 7.8. If ⁇ ET- ⁇ EM is 6.5 or less, it is not obvious at a glance whether the surface protective adhesive tape 3 for semiconductor wafer back grinding is attached to the mirror wafer. This may cause an error such as double pasting of the tape 3.
- the upper limit of ⁇ ET ⁇ EM is not particularly defined, but preferably ⁇ ET ⁇ EM ⁇ 30, more preferably ⁇ ET ⁇ EM ⁇ 25, and further preferably ⁇ ET ⁇ EM ⁇ 20.
- the adhesive strength of the surface protective adhesive tape for back grinding of a semiconductor wafer of the present invention to a SUS plate polished with # 280 abrasive paper at room temperature (25 ° C.) is 0.3-5. 0 N / 25 mm is preferable.
- the adhesive strength before ultraviolet curing is preferably 1.0 to 20 N / 25 mm, and the adhesive strength after ultraviolet curing is preferably 0.01 to 1.0 N / 25 mm.
- a pressure-sensitive adhesive unlike an ultraviolet curable adhesive, it is difficult to significantly adjust the adhesive force. Therefore, when it is 5.0 N / 25 mm or more, a peeling failure or a problem of adhesive residue occurs.
- the adhesive strength at the time of peeling can be arbitrarily controlled by irradiating with ultraviolet rays, and the range of preferable adhesive strength before and after ultraviolet curing is different.
- the surface protective adhesive tape for back grinding of the semiconductor wafer is not peeled from the semiconductor wafer during grinding, thereby improving seapage and semiconductor wafer cracking.
- peeling after grinding is facilitated, which improves semiconductor wafer breakage and adhesive residue.
- what can reduce adhesive force for peeling such as a radiation-curing-type tape, means the adhesive force measured before the grinding process, ie, before and after performing the adhesive force reduction process.
- the adhesive strength of the pressure-sensitive adhesive can be adjusted by the thickness of the pressure-sensitive adhesive layer and the type of the base material even when the pressure-sensitive adhesive is the same.
- the notch size that can be recognized by the present invention for example, the notch depth specified by the SEMI standard and the JEITA standard is 1.00 mm (tolerance +0.25 mm, ⁇ 0.00 mm), and the notch angle is 90 ° (tolerance +5). °, -1 °).
- the semiconductor wafer having a notch that can be recognized by the present invention include a semiconductor wafer having a large diameter such as 8 inches or 12 inches.
- the semiconductor wafer grinding method of the present invention includes a step of bonding a surface protective adhesive tape for backside grinding of a semiconductor wafer of the present invention to the surface of the semiconductor wafer having a notch.
- the surface protective pressure-sensitive adhesive tape for back grinding of a semiconductor wafer is formed by providing a base material and an adhesive layer on one surface side of the base material, and the adhesive layer of the base material is not formed.
- the difference between the color difference ( ⁇ EM) and the color difference ( ⁇ ET) when the surface protective adhesive tape for back grinding of the semiconductor wafer is bonded to the mirror wafer is ⁇ ET ⁇ EM> 6.5.
- the surface protective pressure-sensitive adhesive tape for semiconductor wafer back-grinding of the present invention used in the semiconductor wafer grinding method is applied in the preferred range of the above-described surface protective pressure-sensitive adhesive tape for semiconductor wafer back-grinding.
- the grinding method of the semiconductor wafer of this invention is demonstrated in detail, it is not limited to these.
- the release liner 4 is peeled from the pressure-sensitive adhesive layer 2 of the surface protective pressure-sensitive adhesive tape 3 for back grinding of the semiconductor wafer, the surface of the pressure-sensitive adhesive layer 2 is exposed, and a notch is formed through the pressure-sensitive adhesive layer 2. It is attached to the surface (front surface) of the semiconductor wafer where the integrated circuit is incorporated or the electrode is formed.
- the semiconductor wafer is fixed to the chuck table or the like of the grinding machine via the base material layer 1 of the surface protective adhesive tape 3 for back grinding of the semiconductor wafer, and the side or electrode on which the integrated circuit of the semiconductor wafer is not incorporated Grinding, chemical treatment, etc. is performed on the surface (back surface) on which no is formed. After the grinding, chemical treatment, etc. are completed, the surface protective adhesive tape 3 for back grinding of the semiconductor wafer is peeled off.
- an automatic taping device of a laminator DR8500III (trade name: manufactured by Nitto Seiki Co., Ltd.) is used for the operation of adhering the surface protective adhesive tape 3 for back grinding of a semiconductor wafer to a semiconductor wafer.
- a laminator DR8500III (trade name: manufactured by Nitto Seiki Co., Ltd.) is used for the operation of adhering the surface protective adhesive tape 3 for back grinding of a semiconductor wafer to a semiconductor wafer.
- an apparatus of DGP8760 (trade name: manufactured by DISCO Corporation) can be used.
- the surface protective adhesive tape 3 for semiconductor wafer back surface grinding is peeled off by grinding the back surface of the semiconductor wafer into a thin film and then dicing die bond sheet (dicing) in which an adhesive and an adhesive are laminated on a substrate. This is performed after the back surface of the semiconductor wafer is bonded to the adhesive surface of the tape and the wafer is mounted.
- dicing die bond sheet
- an apparatus of RAD-2700F (trade name: manufactured by Lintec Co., Ltd.) can be used for the wafer mounting onto the dicing tape and the peeling process of the surface protective adhesive tape 3 for back grinding of the semiconductor wafer.
- the dicing die bond sheet When bonding to a dicing die bond sheet, the dicing die bond sheet is brought into close contact with the semiconductor wafer by heating at a high temperature (about 80 ° C.). Since the surface protective pressure-sensitive adhesive tape 3 for back grinding of a semiconductor wafer of the present invention is excellent in heat resistance, it can function as a surface protective pressure-sensitive adhesive tape without problems such as melting and deformation during heating.
- the semiconductor wafer grinding method of the present invention is superior in sensor recognizability, by using the surface protective adhesive tape 3 for back grinding of a semiconductor wafer of the present invention that is excellent in bonding visibility and heat resistance.
- the work efficiency is higher than the grinding method, and the workability is further improved.
- EVA ethylene-vinyl acetate copolymer
- a pressure-sensitive adhesive composition To 100 parts by mass of the polymer solution, 2.0 parts by mass of Coronate L (trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.) was blended as a curing agent to obtain a pressure-sensitive adhesive composition. As shown in FIG. 1, the obtained pressure-sensitive adhesive composition was coated on the release liner 4 so that the thickness of the pressure-sensitive adhesive layer 2 was 30 ⁇ m, and the base film 1 (the base material in Example 1) The film was affixed to film A) to obtain a surface protective adhesive tape 3 for back surface grinding with a thickness of 195 ⁇ m.
- Coronate L trade name, manufactured by Nippon Polyurethane Industry Co., Ltd.
- EVA ethylene-vinyl acetate copolymer
- EVA ethylene-vinyl acetate copolymer
- EVA ethylene-vinyl acetate copolymer
- LDPE low density polyethylene
- Example 6 An ethylene-vinyl acetate copolymer (EVA) resin C (100 parts by mass) containing a vinyl acetate component content of 10.0% by mass contains a blue pigment copper phthalocyanine blue (5.0% by mass). 5.0 parts by mass of 6.0% by mass of ethylene-vinyl acetate copolymer (EVA) resin B was dry blended.
- a substrate film F of 2 ⁇ m was obtained.
- LDPE low density polyethylene
- 1 mol% of methacrylic acid, 22 mol% of 2-hydroxyethyl acrylate and 77 mol% of 2-ethylhexyl acrylate were blended, and 0.2 parts by mass of azobisisobutyronitrile was added to 100 parts by mass of the total monomers.
- a polymer solution having a mass average molecular weight of 700,000 was obtained by copolymerization in an ethyl acetate solution at a temperature of 70 ° C.
- the obtained pressure-sensitive adhesive composition was coated on the release liner 4 so that the thickness of the pressure-sensitive adhesive layer 2 was 30 ⁇ m, and the base film 1 (the base material in Comparative Example 2) Bonded to film G), a surface protective adhesive tape 3 for back surface grinding with a thickness of 180 ⁇ m was obtained.
- ethylene-vinyl acetate copolymer (EVA) resin C 100 parts by mass containing a vinyl acetate component content of 10.0% by mass contains a blue pigment copper phthalocyanine blue (5.0% by mass). 4.0 parts by mass of 6.0% by mass of ethylene-vinyl acetate copolymer (EVA) resin B was dry blended.
- a base film I of 1 ⁇ m was obtained.
- the mass average molecular weight of the resin is a polystyrene-equivalent value obtained by measuring a 1% solution obtained by dissolving in tetrahydrofuran by gel permeation chromatography (trade name: 150-C ALC / GPC, manufactured by Waters). It is calculated as an average molecular weight.
- the surface roughness Rz of the back surface of the base film is measured in three places, based on JIS B0601, at the center when viewed in the width direction of the base film 1 having a width of 230 mm and at a position 80 mm away from the center to the left and right. This is a value obtained by measuring ten-point average roughness Rz by measuring with “Handy Surf E-30A” (trade name: manufactured by Tokyo Seimitsu Co., Ltd.) in two directions of length and width as 5 mm. .
- the difference ( ⁇ ET ⁇ EM) between the color difference ( ⁇ ET) of the tape-bonded wafer and the color difference ( ⁇ EM) of the mirror wafer was calculated and evaluated according to the following criteria.
- the surface protective pressure-sensitive adhesive tape 3 for backside grinding of each of the semiconductor wafers of Examples and Comparative Examples from which the release liner 4 has been peeled is shown in FIG. 8 inch silicon mirror wafer with notch 6 (manufactured by Shin-Etsu Semiconductor Co., Ltd., notch depth 1.00 mm (tolerance +0.25 mm, ⁇ 0.00 mm), notch angle 90 ° (tolerance + 5 °, ⁇ 1 °) ) Semiconductor wafer).
- the surface which has not bonded the surface protection adhesive tape 3 for back surface grinding of the semiconductor wafer of the said semiconductor wafer was ground to 100 micrometers in thickness using DGP8760 (brand name: DISCO Corporation make).
- DGP8760 brand name: DISCO Corporation make
- the above-mentioned semiconductor wafer after grinding is mounted on a dicing tape using a RAD-2700F (trade name: manufactured by Lintec Co., Ltd.) and the surface protective tape 3 for grinding the back surface of the semiconductor wafer is peeled off. It was evaluated with.
- C A notch detection error occurred during tape mounting
- the surface protection adhesive tape 3 for back grinding of each of the semiconductor wafers of the examples and comparative examples with the release liner 4 peeled off is an 8-inch silicon mirror having a notch 6 similar to the above.
- Grinder DGP8760 (trade name: product name: the surface of each semiconductor wafer that has been bonded to the surface of the semiconductor wafer that has not been bonded to the surface protective adhesive tape 3 for back surface grinding is bonded to the wafer (semiconductor wafer).
- Each of the 25 semiconductor wafers was polished to a thickness of 50 ⁇ m using a disco company, and evaluated according to the following criteria.
- B The warp of at least one semiconductor wafer was 10 mm or more and less than 20 mm
- C The warp of at least one semiconductor wafer was 20 mm or more What happened
- the surface protection adhesive tape 3 for back grinding of each of the semiconductor wafers of the examples and comparative examples with the release liner 4 peeled off is an 8-inch silicon mirror having a notch 6 similar to the above. Bonding to a wafer (semiconductor wafer), each semiconductor wafer after the bonding is placed on a hot plate at 80 ° C. so that the surface protective adhesive tape surface for back grinding of the semiconductor wafer is in contact with the hot plate. Left for a minute. Thereafter, the back surface (base film side) of the surface protective adhesive tape for back surface grinding of the semiconductor wafer was visually observed and evaluated according to the following criteria. A: Melting or the like was not observed, and there was no change before and after heating. C: Changes such as melting of the back surface due to heating were observed.
- base material 11 Surface of the substrate where the adhesive layer is not formed (Back) 2 Adhesive Layer 3 Surface Protective Adhesive Tape for Back Grinding of Semiconductor Wafer 4 Release Liner 5 Semiconductor Wafer (Silicon Mirror Wafer) 6 Notch 7 Orientation flat 8 Semiconductor wafer (silicon mirror wafer)
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Abstract
Description
具体的には、本発明は、上記の問題点を解決し、シリコンウェハなどの裏面研削加工工程において、薄膜化研削が必要な半導体ウェハに対して適用してもセンサー認識問題を発生させることなく、かつ貼合視認性および耐熱性を兼ね備えることで、作業性に優れる半導体ウェハの裏面研削加工用表面保護粘着テープおよびそれを用いた半導体ウェハの研削加工方法を提供することを目的とする。
ここで、テープの背面の粗さは、各種の表面粗さ(例えば、中心線平均粗さRa等)が存在するが、Rzで規定される表面粗さを使用することで、本発明の上記の課題が解決できた。
〔1〕基材と、該基材の一方の面側に粘着剤層を設けてなる半導体ウェハの裏面研削加工用表面保護粘着テープであって、
該基材の粘着剤層が形成されていない面の表面粗さがRz=0.7~5.0μmであり、
該半導体ウェハの裏面研削加工用表面保護粘着テープの波長500~600nmにおける全光線透過率が40~80%であり、
ミラーウェハの色差(ΔEM)と該半導体ウェハの裏面研削加工用表面保護粘着テープを該ミラーウェハに貼り合わせた状態での色差(ΔET)の差がΔET-ΔEM>6.5であり、
ノッチを有する半導体ウェハの表面に貼り合わせて半導体ウェハの裏面を研削加工する工程で用いられることを特徴とする半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔2〕前記表面粗さRzが、0.7μm以上5.0μm未満であることを特徴とする〔1〕に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔3〕前記基材に、フタロシアニン顔料、ナフタロシアニン顔料、インダントロン顔料、インダンスレン顔料およびトリアリールカルボニウム顔料から選択される顔料を含有することを特徴とする〔1〕または〔2〕に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔4〕前記基材の厚さが、80~200μmであることを特徴とする〔1〕~〔3〕のいずれか1項に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔5〕前記基材が、同じ共重合成分からなる樹脂で構成され、該共重合成分に少なくとも酢酸ビニルが含まれることを特徴とする〔1〕~〔4〕のいずれか1項に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔6〕前記酢酸ビニル成分の含有量が、1.9~10.5質量%であることを特徴とする〔5〕に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔7〕前記基材が単層または複層であって、該基材における粘着剤層が形成されていない側の最外層の基材樹脂の融点が85℃以上であることを特徴とする〔1〕~〔6〕のいずれか1項に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
〔8〕ノッチを有する半導体ウェハの表面に半導体ウェハの裏面研削加工用表面保護粘着テープを貼り合わせて半導体ウェハの裏面を研削加工する半導体ウェハの研削加工方法であって、
該半導体ウェハの裏面研削加工用表面保護粘着テープが、基材と、該基材の一方の面側に粘着剤層を設けてなるものであって、
該基材の粘着剤層が形成されていない面の表面粗さがRz=0.7~5.0μmであり、
該半導体ウェハの裏面研削加工用表面保護粘着テープの波長500~600nmにおける全光線透過率が40~80%であり、
ミラーウェハの色差(ΔEM)と該半導体ウェハの裏面研削加工用表面保護粘着テープを該ミラーウェハに貼り合わせた状態での色差(ΔET)の差がΔET-ΔEM>6.5であることを特徴とする半導体ウェハの研削加工方法。
〔9〕前記表面粗さRzが、0.7μm以上5.0μm未満であることを特徴とする〔8〕に記載の半導体ウェハの研削加工方法。
従って、本発明の半導体ウェハの裏面研削加工用表面保護粘着テープを用いることで、半導体ウェハの裏面研削加工の効率を高め、作業性を改善することができる。
半導体ウェハの裏面研削加工用表面保護粘着テープ3は、図2に示すノッチ6を有する半導体ウェハ5の集積回路が組み込まれた側若しくは電極が形成された側の面(表面)に貼り合わせた状態で、半導体ウェハ5の集積回路が組み込まれていない側若しくは電極が形成されていない側の面(裏面)を研削加工する工程で用いられる。
ここで、本発明の半導体ウェハの裏面研削加工用表面保護粘着テープ3は、基材1および粘着剤層2が、使用工程または装置にあわせてあらかじめ所定の形状に切断(プリカット)された形態でもよく、カットされていない長尺のシートをロール状に巻き取った形態でもよい。所定の形状とは、例えば、半導体ウェハ5と同じ直径で、ノッチ6の部分もカバーする円形状が挙げられ、半導体ウェハの集積回路を保護し、半導体ウェハの裏面を研削加工でき、かつ、本発明の効果を損なわない限り、どのような形状でもよい。
なお、特に断りがない限り、「~」で表される数値範囲においては、前後の数値を含むものとする。
本発明に用いられる基材1(以下、基材フィルムとも称す。)の主目的は、半導体ウェハの裏面を研削加工する際の衝撃からの半導体ウェハの保護であって、特に水洗浄等に対する耐水性と加工部品の保持性を有することが重要である。このような基材1としては、例えば、特開2004-186429号公報に記載のものを挙げることができる。
なお、本発明で使用する基材1の樹脂としては、通常、粘着テープで用いられるものを使用することができる。例えば、ポリエチレン、ポリプロピレン、エチレン-プロピレン共重合体、ポリブテン、エチレン-酢酸ビニル共重合体、エチレン-アクリル酸エステル共重合体、アイオノマーなどのα-オレフィンの単独重合体または共重合体、ポリエチレンテレフタレート、ポリカーボネート、ポリメタクリル酸メチル等のエンジニアリングプラスチック、ポリウレタン、スチレン-エチレン-ブテンもしくはペンテン系共重合体等の熱可塑性エラストマーが挙げられる。
基材1は、これらの群から選ばれる樹脂を単層または複層で用いてもよく、これらの群から選ばれる2種以上が混合されたものを単層または複層で用いてもよい。
なお、例えば、基材1を製膜する際に使用される冷却ロールの粗さをコントロールすることで、基材背面11の粗さを任意の値にすることができる。加熱によって流動性を得た樹脂は押し出され、その後冷却ロールによって冷やされてフィルム化される。樹脂の冷却には金属ロールやゴムロールが用いられることが多い。例えばゴムロールを用いる場合、剥離性を付与するためシリコンの粒子がゴムに混ぜられ、該シリコン粒子の粒子径を任意に調整することによって、基材背面11の粗さを調整することができる。
上記のように、冷却ロールで粗さをコントロールすると、基材1の粘着剤層2が形成されていない面全体に、表面粗さを均一に施すことができる。
ここで、粘着剤層2が形成されていない側の最外層の基材とは、基材1が単層である場合には単層を、基材1が複層である場合には、粘着剤層2から最も離れた位置にある基材層を意味する。
また、本発明では、共重合体からなる樹脂は、ランダム共重合体、ブロック共重合体、交互共重合体、グラフト共重合体のいずれであっても構わない。
本発明においては、特にエチレン-酢酸ビニル共重合体(以下、EVAとも称す。)が好ましい。
顔料は、青色顔料が好ましく、例えば、フタロシアニン顔料、ナフタロシアニン顔料、インダントロン顔料、インダンスレン顔料、トリアリールカルボニウム顔料が挙げられる。これらのうち、フタロシアニン顔料、ナフタロシアニン顔料が好ましく、フタロシアニン顔料がより好ましく、なかでも銅フタロシアニンブルーが好ましい。
着色用顔料の配合量は、基材1を形成する樹脂100質量部に対し、0.005~1.0質量部が好ましく、0.01~0.5質量部がより好ましい。また、同一樹脂であっても複層で押し出すことでフィルム化し、粘着剤層が形成される側のみに顔料を配合することがより好ましい。粘着剤層が形成される側のみに顔料を配合することで、半導体ウェハの裏面研削加工用表面保護粘着テープ3が酸などのエッチング液に浸された場合であっても、酸に露出することがないため、半導体ウェハの裏面研削加工用表面保護粘着テープ3の変色を防ぐことができる。
本発明では、これらの中でも高密度ポリエチレン、低密度ポリエチレン、ポリプロピレンが好ましい。
複数の樹脂が積層された基材1の場合、本発明では、酢酸ビニルが含まれる樹脂を含む層が、粘着剤層が形成される側に設けられるのが好ましい。
基材1のMFRが上記の範囲である場合には、ロール状に巻かれた半導体ウェハの裏面研削加工用表面保護粘着テープ3をラミネータにセットし、半導体ウェハの裏面研削加工用表面保護粘着テープ3を繰出して半導体ウェハ5表面に貼合する工程で、約150℃に加熱したカッター刃を半導体ウェハ5外周部に沿って回転させ、半導体ウェハの裏面研削加工用表面保護粘着テープ3を半導体ウェハ形状に切断する際に発生する熱で、上記半導体ウェハの裏面研削加工用表面保護粘着テープ3の基材1が半導体ウェハ5側面を覆うように融着することができる。その結果、粘着剤層2と半導体ウェハ5の界面を基材1で覆うことになり、シーページを防ぐことができる。
厚さをこの範囲とすることで、半導体ウェハの裏面研削加工用表面保護粘着テープ3の形態を維持する性質に優れ、しかも取り扱う際の作業性が向上する。なお、厚さを厚くしすぎると、基材1の生産性に影響を与え、製造コストの増加につながるおそれがある。
本発明の半導体ウェハの裏面研削加工用表面保護粘着テープ3で用いられる粘着剤の材料は、特に制限されるものではなく、従来のものを用いることができる。例えば、放射線を照射することにより硬化して粘着性が低下し、半導体ウェハ5から容易に剥離できる性質を持つものでもよい。具体的には(メタ)アクリル酸エステルを構成成分とする単独重合体や、(メタ)アクリル酸エステルを構成成分として有する共重合体、(メタ)アクリル樹脂、(メタ)アクリル酸エステルを挙げることができる。
なお、質量平均分子量は、テトラヒドロフランに溶解して得た1%溶液を、ゲルパーミエーションクロマトグラフィー(ウォーターズ社製、商品名:150-C ALC/GPC)により測定した値をポリスチレン換算の質量平均分子量として算出したものである。
また、半導体ウェハ表面から裏面研削加工用表面保護粘着テープ3を剥離する際には、放射線を照射することにより、粘着剤層2の硬化、収縮により粘着剤層全体の粘着力が十分に低下して、半導体ウェハを破損することなく、良好な作業性で半導体ウェハの裏面研削加工用表面保護粘着テープ3を剥離することができる。従って、本発明の半導体ウェハの裏面研削加工用表面保護粘着テープ3は、凹凸への優れた密着性と剥離時の易剥離性を保持したまま、低汚染性を同時に達成することができる。
波長500~600nmの全光線透過率が40%未満になるとノッチの検出が困難になりセンサー認識エラーが発生してしまう。また波長500~600nmの全光線透過率が80%を超えると透明度が高いため、貼合したかどうかの識別が困難になってしまう。
なお、放射線硬化型テープなど剥離のために粘着力を下げることが可能なものについては、研削加工工程の前、すなわち粘着力低減処理を行う前後の状態で測定した粘着力をいう。
このような粘着力を付与するには、上記の粘着剤層における好ましい構成で達成可能であるが、特に硬化剤の配合量を調整することで、上記の範囲とすることができる。
また、これに加えて、粘着剤の粘着力は、同じ粘着剤であっても、粘着剤層の厚さや基材の種類によっても調整することができる。
本発明により認識できるノッチを有する半導体ウェハとしては、8インチ、12インチ等のように大径化された半導体ウェハが挙げられる。
本発明の半導体ウェハの研削加工方法は、ノッチを有する半導体ウェハの表面に対して、本発明の半導体ウェハの裏面研削加工用表面保護粘着テープを貼り合わせる工程を有する。
半導体ウェハの裏面研削加工用表面保護粘着テープは、基材と、該基材の一方の面側に粘着剤層を設けてなるものであって、該基材の粘着剤層が形成されていない面の表面粗さがRz=0.7~5.0μmであり、該半導体ウェハの裏面研削加工用表面保護粘着テープの波長500~600nmにおける全光線透過率が40~80%であり、ミラーウェハの色差(ΔEM)と該半導体ウェハの裏面研削加工用表面保護粘着テープを該ミラーウェハに貼り合わせた状態での色差(ΔET)の差がΔET-ΔEM>6.5である。
半導体ウェハの研削加工方法で使用する本発明の半導体ウェハの裏面研削加工用表面保護粘着テープは、先に説明した半導体ウェハの裏面研削加工用表面保護粘着テープの好ましい範囲のものが適用される。
以下、本発明の半導体ウェハの研削加工方法についてより詳細に説明するが、これらに限定されるものではない。
半導体ウェハの裏面の研削加工操作には、例えば、DGP8760(商品名:ディスコ(株)社製)の装置を使用することができる。
ダイシングテープへのウェハマウントおよび半導体ウェハの裏面研削加工用表面保護粘着テープ3の剥離工程には、例えば、RAD-2700F(商品名:リンテック(株)社製)の装置を使用することができる。
酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂A100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを0.6質量部ドライブレンドした。押出成形機で押出成形することにより厚さ165μm、背面の表面粗さRz=1.2μmの基材フィルムAを得た。
メタクリル酸を2mol%、2-エチルヘキシルアクリレートを50mol%、2-ヒドロキシエチルアクリレートを30mol%、メチルアクリレートを18mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量80万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)2.0質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(実施例1においては基材フィルムA)に貼り合せ、厚さ195μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂A100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを0.3質量部ドライブレンドした。押出成形機で押出成形することにより厚さ165μm、背面の表面粗さRz=0.7μmの基材フィルムBを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、ブチルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.3質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量30万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが40μmになるように剥離ライナー4上に塗工し、基材フィルム1(実施例2においては基材フィルムB)に貼り合せ、厚さ205μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が10.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂C100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを0.6質量部ドライブレンドした。押出成形機で押出成形することにより厚さ100μm、背面の表面粗さRz=3.7μmの基材フィルムCを得た。
メタクリル酸を2mol%、2-ヒドロキシエチルアクリレートを29mol%、2-エチルヘキシルアクリレートを69mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量23万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(実施例3においては基材フィルムC)に貼り合せ、厚さ130μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が10.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂C100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを0.8質量部ドライブレンドした。押出成形機で押出成形することにより厚さ100μm、背面の表面粗さRz=4.9μmの基材フィルムDを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(実施例4においては基材フィルムD)に貼り合せ、厚さ130μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が10.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂C100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを3.0質量部ドライブレンドした。押出成形機で低密度ポリエチレン(LDPE)とドライブレンドした上記EVA樹脂を押出成形することにより、厚さ比率がLDPE:EVA=1:1である厚さ80μm、背面の表面粗さRz=2.1μmの基材フィルムEを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが40μmになるように剥離ライナー4上に塗工し、基材フィルム1(実施例5においては基材フィルムE)のEVA側に貼り合せ、厚さ120μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が10.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂C100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを5.0質量部ドライブレンドした。押出成形機で高密度ポリエチレン(HDPE)とドライブレンドした上記EVA樹脂を押出成形することにより、厚さ比率がHDPE:EVA=3:7である厚さ200μm、背面の表面粗さRz=3.2μmの基材フィルムFを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.3質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが40μmになるように剥離ライナー4上に塗工し、基材フィルム1(実施例6においては基材フィルムF)のEVA側に貼り合せ、厚さ240μmの裏面研削加工用表面保護粘着テープ3を得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが42μmになるように剥離ライナー4上に塗工し、基材フィルム1(比較例1においては、厚さ38μm、背面の表面粗さRz=0.1μmのテイジンテトロンフィルムG2C(商品名、帝人デュポンフィルム(株)社製))に貼り合せ、厚さ80μmの裏面研削加工用表面保護テープ3を得た。
低密度ポリエチレン(LDPE)樹脂を押出成形機で押出成形することにより、厚さ150μm、背面の表面粗さRz=5.8μmの基材フィルムGを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(比較例2においては基材フィルムG)に貼り合せ、厚さ180μmの裏面研削加工用表面保護粘着テープ3を得た。
低密度ポリエチレン(LDPE)樹脂100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを30質量部ドライブレンドした。押出成形機でドライブレンドした樹脂を押出成形することにより、厚さ300μm、背面の表面粗さRz=2.5μmの基材フィルムHを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(比較例3においては基材フィルムH)に貼り合せ、厚さ330μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が10.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂C100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂Bを4.0質量部ドライブレンドした。押出成形機で低密度ポリエチレン(LDPE)とドライブレンドした上記EVA樹脂を押出成形することにより、厚さ比率がLDPE:EVA=3:7である厚さ100μm、背面の表面粗さRz=7.1μmの基材フィルムIを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(比較例4においては基材フィルムI)のEVA側に貼り合せ、厚さ130μmの裏面研削加工用表面保護粘着テープ3を得た。
酢酸ビニル成分の含有量が20.0質量%のエチレン-酢酸ビニル共重合体(EVA)樹脂D100質量部に、青色顔料の銅フタロシアニンブルーを5.0質量%含有した酢酸ビニル成分の含有量が6.0質量%のエチレン酢酸ビニル共重合体(EVA)樹脂Bを0.3質量部ドライブレンドした。押出成形機で押出成形することにより厚さ165μm、背面の表面粗さRz=6.8μmの基材フィルムJを得た。
メタクリル酸を1mol%、2-ヒドロキシエチルアクリレートを22mol%、2-エチルヘキシルアクリレートを77mol%の割合で配合し、総モノマー100質量部に対してアゾビスイソブチロニトリルを0.2質量部添加し、窒素ガス置換した反応容器内にて酢酸エチル溶液中、温度70℃で共重合させることにより、質量平均分子量70万のポリマー溶液を得た。このポリマー溶液に、ポリマー100質量部に対して、硬化剤としてコロネートL(商品名、日本ポリウレタン工業株式会社製)1.5質量部を配合し、粘着剤組成物を得た。
得られた粘着剤組成物を、図1に示すように、粘着剤層2の厚さが30μmになるように剥離ライナー4上に塗工し、基材フィルム1(比較例5においては基材フィルムJ)に貼り合せ、厚さ195μmの裏面研削加工用表面保護粘着テープ3を得た。
上記実施例1~6および比較例1~5で得られた各半導体ウェハの裏面研削加工用表面保護粘着テープ3について、以下の試験を行い、その性能を評価し、下記表1、2に示す結果を得た。
基材フィルム背面の表面粗さRzは、JIS B0601に基づき、幅230mmの基材フィルム1の幅方向に見た場合の中心と中心から左右に80mm離れた位置の計3箇所において、測定長さ5mmとして長さ方向および幅方向の2方向について、「ハンディサーフE-30A」(商品名:東京精密(株)社製)を用いて測定し、十点平均粗さRzを求めた値である。
実施例および比較例の半導体ウェハの裏面研削加工用表面保護粘着テープ3から剥離ライナー4を剥離し、基材フィルム1面側からの波長500~600nmにおける全光線透過率を、分光光度計UV3101PC&MPC-3100(商品名、(株)島津製作所製)を使用してN=3で測定し平均値を求めた。
色彩色差計CR-400(商品名:コニカミノルタ(株)社製)を用いて実施例および比較例の半導体ウェハの裏面研削加工用表面保護粘着テープ3から剥離ライナー4を剥離して色差測定を行った。白色校正板を用いて、この白色を基準としたミラーウェハの色差(ΔEM)を測定した。測定したミラーウェハに実施例および比較例の各半導体ウェハの裏面研削加工用表面保護粘着テープ3から剥離ライナー4を剥離した裏面研削加工用表面保護粘着テープ3をエアーが入らないように貼合し、テープ貼合ウェハの色差(ΔET)を測定した。テープ貼合ウェハの色差(ΔET)とミラーウェハの色差(ΔEM)の差(ΔET-ΔEM)を計算し、以下の基準で評価した。
A:ΔET-ΔEM>6.5のもの
C:ΔET-ΔEM≦6.5のもの
剥離ライナー4を剥離した、実施例および比較例の各半導体ウェハの裏面研削加工用表面保護粘着テープ3を、ラミネータDR8500III(商品名:日東精機(株)社製)を用いて、図2のような、ノッチ6を有する8インチシリコンミラーウェハ(信越半導体工業社製、ノッチ深さ1.00mm(許容差+0.25mm、-0.00mm)、ノッチ角度90°(許容差+5°、-1°)の半導体ウェハ)に貼合した。
その後、DGP8760(商品名:ディスコ(株)社製)を用いて、上記半導体ウェハの半導体ウェハの裏面研削加工用表面保護粘着テープ3を貼合していない面を厚さ100μmまで研削した。研削後の上記半導体ウェハをRAD-2700F(商品名:リンテック(株)社製)を用いてダイシングテープへのウェハマウントおよび半導体ウェハの裏面研削加工用表面保護テープ3の剥離を行い、以下の基準で評価した。
A:問題なく剥離できたもの
C:テープマウント時にノッチの検出エラーが発生したもの
上記センサー認識性評価と同様にして、剥離ライナー4を剥離した、実施例および比較例の各半導体ウェハの裏面研削加工用表面保護粘着テープ3を、上記と同様のノッチ6を有する8インチシリコンミラーウェハ(半導体ウェハ)に貼合し、該貼合後の各半導体ウェハの半導体ウェハの裏面研削加工用表面保護粘着テープ3を貼合していない面を、インライン機構を持つグラインダーDGP8760(商品名:ディスコ(株)社製)を使用して厚さ50μmまでそれぞれ25枚の半導体ウェハの研磨を行い、以下の基準で評価した。
A:25枚の半導体ウェハ全ての反りが10mm未満であったもの
B:半導体ウェハの少なくとも1枚の反りが10mm以上20mm未満であったもの
C:半導体ウェハの少なくとも1枚の反りが20mm以上であったもの
上記センサー認識性評価と同様にして、剥離ライナー4を剥離した、実施例および比較例の各半導体ウェハの裏面研削加工用表面保護粘着テープ3を、上記と同様のノッチ6を有する8インチシリコンミラーウェハ(半導体ウェハ)に貼合し、該貼合後の各半導体ウェハを、80℃のホットプレート上に半導体ウェハの裏面研削加工用表面保護粘着テープ面をホットプレートに接触するように置き、3分間放置した。その後、半導体ウェハの裏面研削加工用表面保護粘着テープ背面(基材フィルム側)を目視で観察し、以下の基準で評価した。
A:溶融などが観側されず、加熱前後で変化がなかったもの
C:加熱により背面が溶けるなどの変化が見られたもの
11 基材の粘着剤層が形成されていない面(背面)
2 粘着剤層
3 半導体ウェハの裏面研削加工用表面保護粘着テープ
4 剥離ライナー
5 半導体ウェハ(シリコンミラーウェハ)
6 ノッチ
7 オリフラ
8 半導体ウェハ(シリコンミラーウェハ)
Claims (9)
- 基材と、該基材の一方の面側に粘着剤層を設けてなる半導体ウェハの裏面研削加工用表面保護粘着テープであって、
該基材の粘着剤層が形成されていない面の表面粗さがRz=0.7~5.0μmであり、
該半導体ウェハの裏面研削加工用表面保護粘着テープの波長500~600nmにおける全光線透過率が40~80%であり、
ミラーウェハの色差(ΔEM)と該半導体ウェハの裏面研削加工用表面保護粘着テープを該ミラーウェハに貼り合わせた状態での色差(ΔET)の差がΔET-ΔEM>6.5であり、
ノッチを有する半導体ウェハの表面に貼り合わせて半導体ウェハの裏面を研削加工する工程で用いられることを特徴とする半導体ウェハの裏面研削加工用表面保護粘着テープ。 - 前記表面粗さRzが、0.7μm以上5.0μm未満であることを特徴とする請求項1に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
- 前記基材に、フタロシアニン顔料、ナフタロシアニン顔料、インダントロン顔料、インダンスレン顔料およびトリアリールカルボニウム顔料から選択される顔料を含有することを特徴とする請求項1または2に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
- 前記基材の厚さが、80~200μmであることを特徴とする請求項1~3のいずれか1項に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
- 前記基材が、同じ共重合成分からなる樹脂で構成され、該共重合成分に少なくとも酢酸ビニルが含まれることを特徴とする請求項1~4のいずれか1項に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
- 前記酢酸ビニル成分の含有量が、1.9~10.5質量%であることを特徴とする請求項5に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
- 前記基材が単層または複層であって、該基材における粘着剤層が形成されていない側の最外層の基材樹脂の融点が85℃以上であることを特徴とする請求項1~6のいずれか1項に記載の半導体ウェハの裏面研削加工用表面保護粘着テープ。
- ノッチを有する半導体ウェハの表面に半導体ウェハの裏面研削加工用表面保護粘着テープを貼り合わせて半導体ウェハの裏面を研削加工する半導体ウェハの研削加工方法であって、
該半導体ウェハの裏面研削加工用表面保護粘着テープが、基材と、該基材の一方の面側に粘着剤層を設けてなるものであって、
該基材の粘着剤層が形成されていない面の表面粗さがRz=0.7~5.0μmであり、
該半導体ウェハの裏面研削加工用表面保護粘着テープの波長500~600nmにおける全光線透過率が40~80%であり、
ミラーウェハの色差(ΔEM)と該半導体ウェハの裏面研削加工用表面保護粘着テープを該ミラーウェハに貼り合わせた状態での色差(ΔET)の差がΔET-ΔEM>6.5であることを特徴とする半導体ウェハの研削加工方法。 - 前記表面粗さRzが、0.7μm以上5.0μm未満であることを特徴とする請求項8に記載の半導体ウェハの研削加工方法。
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JP2016210837A (ja) * | 2015-04-30 | 2016-12-15 | 日東電工株式会社 | 裏面保護フィルム、フィルム、半導体装置の製造方法および保護チップの製造方法 |
-
2015
- 2015-10-21 CN CN201580077797.8A patent/CN107431007B/zh active Active
- 2015-10-21 WO PCT/JP2015/079665 patent/WO2017068659A1/ja active Application Filing
- 2015-10-21 KR KR1020177025914A patent/KR102060981B1/ko active IP Right Grant
- 2015-10-21 MY MYPI2018701530A patent/MY196409A/en unknown
- 2015-10-21 SG SG11201802886RA patent/SG11201802886RA/en unknown
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JPH10172931A (ja) * | 1996-12-05 | 1998-06-26 | Mitsui Chem Inc | 半導体ウエハの裏面研削方法及び該方法に用いる粘着フィルム |
JP2004051736A (ja) * | 2002-07-18 | 2004-02-19 | Nitto Denko Corp | 紫外線硬化型粘着シート |
JP2005239889A (ja) * | 2004-02-26 | 2005-09-08 | Nitto Denko Corp | ロール状ウエハ加工用粘着シート |
JP2009239124A (ja) * | 2008-03-27 | 2009-10-15 | Furukawa Electric Co Ltd:The | ウェハ表面保護テープ |
JP2013225670A (ja) * | 2012-03-22 | 2013-10-31 | Furukawa Electric Co Ltd:The | 半導体ウェハの裏面研削加工用表面保護粘着テープおよび半導体ウェハの加工方法 |
Cited By (3)
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JP7260017B1 (ja) | 2022-01-31 | 2023-04-18 | 大日本印刷株式会社 | 半導体加工用粘着テープ |
WO2023145926A1 (ja) * | 2022-01-31 | 2023-08-03 | 大日本印刷株式会社 | 半導体加工用粘着テープ |
JP2023111124A (ja) * | 2022-01-31 | 2023-08-10 | 大日本印刷株式会社 | 半導体加工用粘着テープ |
Also Published As
Publication number | Publication date |
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MY196409A (en) | 2023-03-29 |
SG11201802886RA (en) | 2018-05-30 |
CN107431007B (zh) | 2020-09-18 |
KR20180005158A (ko) | 2018-01-15 |
CN107431007A (zh) | 2017-12-01 |
KR102060981B1 (ko) | 2019-12-31 |
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