WO2017051813A1 - Élément de conversion photoélectrique et module de conversion photoélectrique - Google Patents

Élément de conversion photoélectrique et module de conversion photoélectrique Download PDF

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WO2017051813A1
WO2017051813A1 PCT/JP2016/077792 JP2016077792W WO2017051813A1 WO 2017051813 A1 WO2017051813 A1 WO 2017051813A1 JP 2016077792 W JP2016077792 W JP 2016077792W WO 2017051813 A1 WO2017051813 A1 WO 2017051813A1
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Prior art keywords
photoelectric conversion
layer
substrate
region
insulating
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PCT/JP2016/077792
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English (en)
Japanese (ja)
Inventor
裕一 一ノ瀬
智寿 吉江
教雄 室伏
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シャープ株式会社
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Priority to JP2017541563A priority Critical patent/JP6580147B2/ja
Priority to US15/761,423 priority patent/US20180261398A1/en
Publication of WO2017051813A1 publication Critical patent/WO2017051813A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2077—Sealing arrangements, e.g. to prevent the leakage of the electrolyte
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2068—Panels or arrays of photoelectrochemical cells, e.g. photovoltaic modules based on photoelectrochemical cells
    • H01G9/2081—Serial interconnection of cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/209—Light trapping arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2018—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte characterised by the ionic charge transport species, e.g. redox shuttles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

Definitions

  • the present invention relates to a photoelectric conversion element and a photoelectric conversion module.
  • This application claims priority based on Japanese Patent Application No. 2015-187988 filed on Sep. 25, 2015, and incorporates all the content described in the Japanese Patent Application. .
  • Sunlight is attracting attention as an energy source to replace fossil fuels, and solar cells that can convert sunlight into electric power are attracting attention.
  • the dye-sensitized solar cell has been attracting attention as a new type of solar cell because it has an advantage that the manufacturing cost can be reduced.
  • Patent Document 1 discloses a dye-sensitized solar cell having a monolithic structure.
  • the monolithic structure is formed by laminating a first conductive layer 3, a photoelectric conversion layer 4, a porous insulating layer 5, a catalyst layer 6, and a second conductive layer 7, and the second substrate 2 is a first substrate.
  • the two conductive layers 7 are spaced from each other.
  • there is a problem of an internal short circuit due to the conductive particles as a material for the second conductive layer 7 passing through the pores of the porous insulating layer 5 and reaching the first conductive layer 3.
  • Patent Document 2 discloses a dense structure between the transparent conductive film 32 (corresponding to the first conductive layer 3 in FIG. 13) and the second photoelectrode 35 (corresponding to the photoelectric conversion layer 4 in FIG. 13).
  • a monolithic dye-sensitized solar cell in which the first photoelectrode 34 is disposed is disclosed.
  • Patent Document 2 describes that the presence of the dense first photoelectrode 34 prevents the conductive particles from reaching the transparent conductive film 32.
  • JP 2009-146625 A Japanese Patent Laid-Open No. 2002-367686
  • the embodiment disclosed herein includes a first substrate, a second substrate facing the first substrate with a space therebetween, a first conductive layer positioned on the first substrate, and a photoelectric layer positioned on the first conductive layer.
  • the first conductive layer is divided by the groove into a first region where the photoelectric conversion layer is disposed and a second region where the photoelectric conversion layer is not disposed.
  • An insulating part that covers the surface of the region where the photoelectric conversion layer is not disposed is disposed, and is insulated Has a denser structure than the porous insulating layer, and when the photoelectric conversion layer and the insulating portion are projected from the second substrate side to the first substrate, a part of the projected image of the insulating portion is photoelectric. It is a photoelectric conversion element that overlaps the projected image of the conversion layer.
  • the embodiment disclosed herein is a photoelectric conversion module including the photoelectric conversion element.
  • an internal short circuit in the photoelectric conversion element and the photoelectric conversion module can be suppressed.
  • FIG. 2 is a schematic cross-sectional view of the photoelectric conversion element of Embodiment 1.
  • FIG. FIG. 2 is a schematic plan view showing projection images when the photoelectric conversion layer and the insulating portion are projected from the second substrate side onto the first substrate, which is the photoelectric conversion element of Embodiment 1.
  • 2 is a flowchart of an example of a method for manufacturing the photoelectric conversion element of Embodiment 1.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment. It is typical sectional drawing of the conventional photoelectric conversion element.
  • the photoelectric conversion element of Embodiment 1 it is a schematic diagram which shows the advancing direction of the light which goes to an insulating part from a photoelectric converting layer.
  • 6 is a schematic cross-sectional view of a photoelectric conversion element according to Embodiment 2.
  • FIG. 1 is a schematic cross-sectional view illustrating a part of the manufacturing process of the example of the method for manufacturing the photoelectric conversion element according to the first embodiment.
  • FIG. 10 is a schematic plan view showing projected images when the photoelectric conversion layer and the insulating portion are projected from the second substrate side onto the first substrate in the photoelectric conversion element of the fourth embodiment.
  • FIG. 10 is a schematic cross-sectional view of a photoelectric conversion element according to Embodiment 5.
  • FIG. 10 is a schematic cross-sectional view of a photoelectric conversion element according to Embodiment 6.
  • FIG. 10 is a schematic cross-sectional view of a photoelectric conversion module according to Embodiment 7.
  • the photoelectric conversion element of Embodiment 1 includes a first substrate 1, a second substrate 2 facing the first substrate 1 with a gap, a first conductive layer 3 positioned on the first substrate 1, and a first conductive layer 3 is provided with a photoelectric conversion layer 4 positioned on 3, a porous insulating layer 5 positioned on the photoelectric conversion layer 4, and a second conductive layer 7 positioned on the porous insulating layer 5.
  • a catalyst layer 6 is disposed at least partially between the porous insulating layer 5 and the second conductive layer 7.
  • the first substrate 1 and the second substrate 2 are joined by a sealing material 8, and an electrolyte 9 is disposed in a region surrounded by the first substrate 1, the second substrate 2, and the sealing material 8. Yes.
  • first conductive layer 3 is divided by a groove (scribe line) 11 into a first region 3 a where the photoelectric conversion layer 4 is disposed and a second region 3 b where the photoelectric conversion layer 4 is not disposed.
  • insulating portion 10 is disposed in the groove portion 11.
  • a translucent substrate having translucency can be used. However, it is only necessary to be formed of a material that substantially transmits light having a wavelength that has an effective sensitivity to the photosensitizer described later, and it is not necessarily required to have translucency for light in all wavelength regions. There is no. Specifically, a glass substrate such as soda glass, fused silica glass, or crystal quartz glass, or a heat resistant resin plate such as a flexible film can be used. The thickness of the first substrate 1 is preferably 0.2 to 5 mm (0.2 mm or more and 5 mm or less).
  • the second substrate 2 is not particularly limited.
  • the second substrate 2 may or may not have translucency.
  • a substrate made of ordinary glass can be used. From the viewpoint of weight reduction, it is preferable to use a substrate made of acrylic glass.
  • the first conductive layer 3 is provided on the surface of the first substrate 1 that faces the second substrate 2.
  • the first conductive layer 3 is divided by the groove 11 into a first region 3 a where the photoelectric conversion layer 4 is disposed and a second region 3 b where the photoelectric conversion layer 4 is not disposed.
  • the photoelectric conversion layer 4 is not disposed on the end portion (the first region 3a located in the region A) that partitions the groove 11. Also, the photoelectric conversion layer 4 is not disposed on the end of the first region 3a opposite to the region A.
  • a second conductive layer 7 is disposed on the second region 3b.
  • the first conductive layer 3 is not particularly limited as long as it has conductivity and translucency.
  • ITO indium tin composite oxide
  • SnO 2 tin oxide
  • tin oxide is doped with fluorine.
  • FTO tantalum
  • ZnO zinc oxide
  • the thickness of the first conductive layer 3 is preferably 0.02 to 5 ⁇ m.
  • the electric resistance of the first conductive layer 3 is preferably as low as possible, and is preferably 40 ⁇ / ⁇ or less.
  • the photoelectric conversion layer 4 is provided on the upper surface (upper surface in FIG. 1) of the first region 3 a of the first conductive layer 3, and the surface thereof is covered with the porous insulating layer 5 and the insulating portion 10. .
  • the photoelectric conversion layer 4 has a first surface 4 a that faces the first substrate 1 and a second surface 4 b that faces the second substrate 2. Further, one side located in parallel with the groove 11 and in the vicinity of the groove 11 has a concave shape that is recessed toward the central portion of the photoelectric conversion layer 4.
  • the central part side of the photoelectric conversion layer 4 means the central part of the photoelectric conversion layer 4 extending in the left-right direction in FIG. 1, and the end part side of the photoelectric conversion layer 4 is 1 means both ends of the photoelectric conversion layer 4 extending in the left-right direction in FIG.
  • the photoelectric conversion layer 4 having the above-described shape has a porous semiconductor layer provided on the first conductive layer 3 as a base material, and a photosensitizer is installed on the surface inside and outside the hole of the porous semiconductor layer. It is constituted by.
  • the porous semiconductor layer is not particularly limited as long as it is generally used for photoelectric conversion materials.
  • the porous semiconductor layer include titanium oxide, zinc oxide, tin oxide, iron oxide, niobium oxide, cerium oxide, tungsten oxide, barium titanate, strontium titanate, cadmium sulfide, lead sulfide, zinc sulfide, and indium phosphide.
  • At least one selected from the group consisting of copper-indium sulfide (CuInS 2 ), CuAlO 2 and SrCu 2 O 2 can be used.
  • titanium oxide is preferably used from the viewpoint of high stability.
  • the thickness of the porous semiconductor layer is not particularly limited, but can be 0.1 to 100 ⁇ m, for example.
  • the surface area of the porous semiconductor layer is preferably 10 to 200 m 2 / g.
  • sensitizing dyes such as organic dyes and metal complex dyes
  • organic dyes include azo dyes, quinone dyes, quinone imine dyes, quinacridone dyes, squarylium dyes, cyanine dyes, merocyanine dyes, triphenylmethane dyes, xanthene dyes, porphyrin dyes, and perylenes.
  • At least one selected from the group consisting of a system dye, an indigo dye and a naphthalocyanine dye can be used.
  • the extinction coefficient of an organic dye is larger than the extinction coefficient of a metal complex dye in which a molecule is coordinated to a transition metal.
  • the metal complex dye is composed of a metal coordinated to a molecule.
  • the molecule include porphyrin dyes, phthalocyanine dyes, naphthalocyanine dyes, ruthenium dyes, and the like.
  • the metal include Cu, Ni, Fe, Co, V, Sn, Si, Ti, Ge, Cr, Zn, Ru, Mg, Al, Pb, Mn, In, Mo, Y, Zr, Nb, Sb, La, W, Pt, TA, Ir, Pd, Os, Ga, Tb, Eu, Rb, Bi, Se, As, Sc, Ag, Cd, Hf, Re, Au, Ac, Tc, Te and Rh
  • the at least 1 sort (s) selected from these can be mentioned.
  • the metal complex dye it is preferable to use a phthalocyanine dye or a ruthenium dye with a metal coordinated, and it is particularly preferable to use a ruthenium metal complex dye.
  • ruthenium-based metal complex dye for example, a commercially available ruthenium-based metal complex dye such as Ruthenium 535 dye, Ruthenium 535-bisTBA dye, or Ruthenium 620-1H3TBA dye manufactured by Solaronix can be used.
  • the porous insulating layer 5 is provided on the photoelectric conversion layer 4.
  • the porous insulating layer 5 for example, at least one selected from the group consisting of silicon oxide such as titanium oxide, niobium oxide, zirconium oxide, silica glass or soda glass, aluminum oxide and barium titanate can be used. .
  • a catalyst layer 6 is provided on the surface of the porous insulating layer 5 facing the second substrate 2.
  • the catalyst layer 6 for example, at least one selected from the group consisting of platinum, carbon black, ketjen black, carbon nanotube, and fullerene can be used.
  • the second conductive layer 7 is not particularly limited as long as it has conductivity.
  • the thickness of the second conductive layer 7 is preferably 0.02 to 5 ⁇ m.
  • the electrical resistance of the second conductive layer 7 is preferably as low as possible, and is preferably 40 ⁇ / ⁇ or less.
  • the insulating part 10 is provided on the groove part 11 and covers at least a part of the surface of the first region 3a where the photoelectric conversion layer 4 is not disposed. It is preferable that the insulating portion 10 further covers the surface of the first substrate 1 located between the first region 3a and the second region 3b.
  • the surface of the insulating portion 10 that contacts the concave surface of the photoelectric conversion layer 4 has a convex shape protruding outward so as to correspond to the concave shape.
  • the insulating portion 10 is positioned so as to bite into the central portion side of the photoelectric conversion layer 4.
  • substrate 2 side as shown in FIG. 2, a part of projection image of the insulating part 10 is shown. Overlaps the projected image of the photoelectric conversion layer 4.
  • region shown by hatching in FIG. 2 is an area
  • the insulating portion 10 has a denser structure than the porous insulating layer 5.
  • the dense structure is a structure in which the porous insulating layer 5 can pass through the conductive particles (that is, a porous body), whereas the insulating portion 10 has a structure in which the conductive particles cannot pass through. It means that there is. That is, the insulating part 10 has a smaller porosity than the porous insulating layer 5. While the porosity of the porous insulating layer 5 is generally about 60%, the porosity of the insulating portion 10 is preferably 0 to 50%, and more preferably 0 to 10%.
  • the pore diameter of the gap of the insulating portion 10 is preferably smaller than the pore diameter of the gap of the porous insulating layer 5.
  • a silicone resin, an epoxy resin, a polyisobutylene resin, a hot melt resin, a glass frit, or the like can be used for the insulating portion 10, and a glass frit is particularly used from the viewpoint of heat resistance and chemical resistance. It is preferable.
  • the sealing material 8 holds the first substrate 1 and the second substrate 2 so as to face each other with a space therebetween. Specifically, by joining the second substrate 2 and the first conductive layer 3 (first region 3a) and joining the second substrate 2 and the second conductive layer 7, the first substrate 1 and the first conductive layer 3 are joined. Two substrates 2 are joined. Thereby, a region surrounded by the first substrate 1, the second substrate 2, and the sealing material 8 is sealed.
  • the sealing material 8 only needs to be insulative, and in particular, from the viewpoint of easy manufacture, it is preferably made of an ultraviolet curable resin or a thermosetting resin. Specifically, it is preferably made of a silicone resin, an epoxy resin, a polyisobutylene resin, a hot melt resin, a glass frit, or the like.
  • the electrolyte 9 is filled in a region surrounded by the first substrate 1, the second substrate 2, and the sealing material 8.
  • an electrolyte having at least fluidity can be used.
  • a liquid electrolyte such as an electrolytic solution can be suitably used.
  • the liquid electrolyte may be a liquid material containing redox species.
  • a liquid electrolyte composed of a redox species and a solvent capable of dissolving the redox species can be used.
  • redox species for example, I ⁇ / I 3 ⁇ series, Br 2 ⁇ / Br 3 ⁇ series, Fe 2 + / Fe 3+ series, quinone / hydroquinone series and the like can be used. More specifically, examples of the redox species include metal iodides such as lithium iodide (LiI), sodium iodide (NaI), potassium iodide (KI), calcium iodide (CaI 2 ), and iodine (I 2 ) Can be used.
  • LiI lithium iodide
  • NaI sodium iodide
  • KI potassium iodide
  • CaI 2 calcium iodide
  • I 2 iodine
  • tetraalkylammonium salt such as tetraethylammonium iodide (TEAI), tetrapropylammonium iodide (TPAI), tetrabutylammonium iodide (TBAI), tetrahexylammonium iodide (THAI) and iodine.
  • TEAI tetraethylammonium iodide
  • TPAI tetrapropylammonium iodide
  • TBAI tetrabutylammonium iodide
  • THAI tetrahexylammonium iodide
  • a metal bromide such as lithium bromide (LiBr), sodium bromide (NaBr), potassium bromide (KBr), calcium bromide (CaBr 2 ) and bromine can be used.
  • LiI and I 2 as the redox species.
  • a solvent containing at least one selected from the group consisting of carbonate compounds such as propylene carbonate, nitrile compounds such as acetonitrile, alcohols such as ethanol, water, and aprotic polar substances is used.
  • carbonate compounds such as propylene carbonate
  • nitrile compounds such as acetonitrile
  • alcohols such as ethanol, water
  • aprotic polar substances it is more preferable to use a carbonate compound or a nitrile compound alone or in combination.
  • the electrolyte 9 is illustrated as being disposed only in a region where no member is disposed in the region. However, since the photoelectric conversion layer 4, the porous insulating layer 5, the catalyst layer 6, and the second conductive layer 7 each have a plurality of holes, the electrolyte 9 is also present inside each of the plurality of holes. .
  • the manufacturing method of the photoelectric conversion element of Embodiment 1 includes a first conductive layer formation step (S1), a first porous semiconductor layer formation step (S2), and an insulating portion formation.
  • Step (S3) Step of forming second porous semiconductor layer (S4), Step of forming porous insulating layer (S5), Step of forming catalyst layer (S6), Step of forming second conductive layer (S7), a photosensitizer installation step (S8), a second substrate installation step (S9), and an electrolyte injection step (S10).
  • the photoelectric conversion element manufacturing method of Embodiment 1 may include steps other than S1 to S10, and it goes without saying that the order of steps is not limited to the order of steps described below.
  • the first conductive layer 3 is formed on the first substrate 1 (step S1).
  • a single layer (conductive layer forming layer) made of the material of the first conductive layer 3 is formed on the first substrate 1 by a method such as sputtering, spraying, or screen printing.
  • the conductive layer forming layer corresponding to the groove 11 is removed by laser beam irradiation or the like.
  • the first conductive layer 3 divided into the first region 3a and the second region 3b by the groove 11 is formed.
  • a substrate in which the first conductive layer 3 including the first region 3a and the second region 3b is provided in advance on the first substrate 1 may be prepared.
  • a first porous semiconductor layer 40 is formed on the first conductive layer 3 (step S2).
  • a method for forming the first porous semiconductor layer 40 is not particularly limited, and a conventionally known method can be used. For example, a method of applying a suspension containing semiconductor fine particles on the first conductive layer 3 (first region 3a) and performing at least one of drying and baking can be used.
  • the insulating portion 10 is formed (step S3).
  • a method for forming the insulating portion 10 is not particularly limited, and a conventionally known method can be used. For example, a method of applying a glass paste containing glass frit as a material of the insulating portion 10 to a predetermined position using a screen printing method and drying can be used.
  • a second porous semiconductor layer is further formed on the first porous semiconductor layer 40 (step S4).
  • the second porous semiconductor layer can be formed by a method similar to that for the first porous semiconductor layer 40. Thereby, the porous semiconductor layer used as the base material of the photoelectric conversion layer 4 is formed.
  • the porous insulating layer 5 is formed (step S5).
  • the formation method of the porous insulating layer 5 is not specifically limited, For example, it can form by the method similar to said porous semiconductor layer.
  • the catalyst layer 6 is formed (step S6).
  • the formation method of the catalyst layer 6 is not specifically limited, A conventionally well-known method can be used.
  • the second conductive layer 7 is formed (step S7).
  • the method for forming the second conductive layer 7 is not particularly limited, and a conventionally known method can be used.
  • a photosensitizer is installed in the porous semiconductor layer (step S8).
  • the photoelectric conversion layer 4 in which a photosensitizer is installed in the porous semiconductor layer can be formed by adsorbing a sensitizing dye as a photosensitizer to the porous semiconductor layer.
  • a method of adsorbing the sensitizing dye to the porous semiconductor layer for example, a method of immersing the porous semiconductor layer in a dye adsorbing solution in which the sensitizing dye is dissolved can be used.
  • the dye adsorbing solution is heated so that the dye adsorbing solution penetrates deep into the pores of the porous semiconductor layer. May be.
  • the second substrate 2 is placed above the first substrate 1 (step S9).
  • the precursor of the sealing material 8 is applied so as to surround the periphery of the photoelectric conversion layer 4 with a space from the outer edge of the photoelectric conversion layer 4.
  • the method for applying the precursor of the sealing material 8 is not particularly limited.
  • the precursor can be applied onto the first conductive layer 3 and the second conductive layer 7 using a dispenser.
  • the precursor of the sealing material 8 means the resin before hardening
  • the sealing material 8 means the resin after hardening.
  • the second substrate 2 is placed on the precursor of the sealing material 8 so as to face the first substrate 1. Then, the precursor of the sealing material 8 is irradiated with ultraviolet rays or heat is applied. Thereby, the precursor of the sealing material 8 is hardened, the sealing material 8 is formed, and the first substrate 1 and the second substrate 2 are bonded to each other.
  • an electrolyte 9 is injected into a region surrounded by the first substrate 1, the second substrate 2, and the sealing material 8 (step S10).
  • pouring the electrolyte 9 from the said hole can be performed.
  • the photoelectric conversion element of Embodiment 1 can be manufactured.
  • Embodiment 1 The effect of Embodiment 1 is demonstrated comparing with the conventional photoelectric conversion element shown in FIG.
  • the surface of the groove 11 and the surface of the first region 3a located in the region A are covered with the porous insulating layer 5, thereby the first region 3a. And the internal short circuit between the second region 3b and the internal short circuit between the first region 3a and the second conductive layer 7 are suppressed.
  • the conductive particles pass through the porous insulating layer 5 and reach the first region 3 a located in the region A depending on the state of the pores of the porous insulating layer 5.
  • the porous insulating layer 5 in the vicinity of the region A has a complicated shape such as having a step, formation defects are likely to occur. Such a formation failure causes an internal short circuit of the photoelectric conversion element.
  • the photoelectric conversion element is manufactured by arranging each part on the substrate by using various methods such as a sputtering method, a spray method, and a screen printing method.
  • the arrangement of the porous insulating layer 5 is predetermined.
  • the first region 3 a located in the region A may not be covered with the porous insulating layer 5.
  • Such a photoelectric conversion element is a defective product that causes an internal short circuit.
  • the insulating part 10 covering the first region 3 a located in the region A is arranged in the groove 11.
  • region A which is easy to cause an internal short circuit can be coat
  • the photoelectric conversion element of Embodiment 1 when the photoelectric conversion layer 4 and the insulating unit 10 are projected from the second substrate 2 side to the first substrate 1, A part of the projected image overlaps the projected image of the photoelectric conversion layer 4. That is, when looking down each part from the direction (second substrate side) perpendicular to the main surface (surface on which each part is arranged) of the first substrate 1, the insulating part 10 is located in a region where the photoelectric conversion layer 4 is arranged. It will have been biting into.
  • the insulating part 10 can suppress the arrival of the conductive particles to the first region 3a where the photoelectric conversion layer 4 is not disposed, thereby suppressing an internal short circuit. can do.
  • the projected image of the insulating portion 10 and the projected image of the photoelectric conversion layer 4 overlap when the photoelectric conversion layer 4 and the insulating portion 10 are projected from the second substrate 2 side with respect to the first substrate 1.
  • the width of the region (left-right direction in FIG. 2) is preferably 100 to 500 ⁇ m.
  • the insulating part 10 has the surface 10a which opposes the 2nd board
  • the surface 10a and the first surface 4a are preferably flush with each other. In this case, the possibility of poor formation of the porous insulating layer 5 and the second conductive layer 7 due to an unnecessary step generated between the insulating portion 10 and the photoelectric conversion layer 4 can be eliminated.
  • the insulating part 10 is arrange
  • the refractive index n 10 of the insulating portion 10 is preferably smaller than the refractive index n 4 of the photoelectric conversion layer 4. In this case, the photoelectric conversion efficiency can be improved. The reason for this will be described below.
  • the light incident into the photoelectric conversion layer 4 is absorbed by the photosensitizer in the photoelectric conversion layer 4 to cause photoelectric conversion. For this reason, photoelectric conversion efficiency will improve, so that the movement distance (passing distance) in the photoelectric converting layer 4 of the light which injected in the photoelectric converting layer 4 is long.
  • the photoelectric conversion layer 4 in the vicinity of the region A tends to have a thickness smaller than that of the central portion due to its manufacturing method.
  • the thickness of the end portion of the photoelectric conversion layer 4 is photoelectric conversion. Less than the thickness of the central part of the layer.
  • the light incident on the end portion of the photoelectric conversion layer 4 near the region A and the light incident on the central portion of the photoelectric conversion layer 4 travel in parallel with the thickness direction of the photoelectric conversion layer 4.
  • the movement distance of the former light in the photoelectric conversion layer 4 tends to be shorter than the movement distance of the latter light in the photoelectric conversion layer 4.
  • the photoelectric conversion element of Embodiment 1 has the insulating part 10 arrange
  • the refractive index n 10 ⁇ refractive index n 4 the light incident on the neighboring region A of the photoelectric conversion layer 4 can proceed as shown in Figure 13.
  • FIG. 13 is a schematic diagram illustrating a traveling direction of light from the photoelectric conversion layer 4 toward the insulating unit 10 in the photoelectric conversion element of the first embodiment.
  • the arrows indicate how light that has entered the photoelectric conversion layer 4 from the first substrate 1 side in the vicinity of the region A proceeds in the photoelectric conversion layer 4 and the insulating portion 10.
  • the refractive index n 10 refractive index n 4.
  • the light incident on the interface between the photoelectric conversion layer 4 and the insulating portion 10 is represented by a solid arrow according to Snell's law. It is emitted from the interface with a large emission angle theta A than the incident angle theta B. Further, when the emitted light reaches the next interface, it is emitted from this interface at an emission angle ⁇ D smaller than the incident angle ⁇ C according to Snell's law.
  • the refractive index n 10 ⁇ refractive index n 4 when the refractive index n 10 ⁇ refractive index n 4 is satisfied in the first embodiment, part of light incident on the neighboring region A of the photoelectric conversion layer 4, a photoelectric conversion layer 4 and the insulating portion 10 When passing through the interface at least once, it can be refracted toward the central portion of the photoelectric conversion layer 4.
  • the movement distance of the refracted light in the photoelectric conversion layer 4 is longer than that in the case where the light is not refracted. Therefore, when the photoelectric conversion element of Embodiment 1 satisfies the refractive index n 10 ⁇ refractive index n 4 is able to improve the photoelectric conversion efficiency.
  • the material of the porous semiconductor layer serving as a base of the photoelectric conversion layer 4 is titanium oxide
  • the material of the insulating part 10 Is made into a glass paste containing bismuth-based glass frit.
  • the material of the insulating portion 10 may be a glass paste containing a phosphate glass frit.
  • FIG. 14 typical sectional drawing of the photoelectric conversion element of Embodiment 2 is shown. As shown in FIG. 14, at least one side of the photoelectric conversion layer 4 that is substantially parallel to the groove 11 has a region B that decreases in thickness from the central portion side toward the end portion side.
  • the photoelectric conversion layer 4 having such a shape is easily formed by a screen printing method.
  • the insulating part 10 is provided on the groove part 11 and covers at least a part of the surface of the first region 3a where the photoelectric conversion layer 4 is not disposed. Furthermore, the insulating part 10 is a surface (one side substantially parallel to the groove part 11) constituting the photoelectric converting layer 4 included in the region B (the region including the boundary between the photoelectric converting layer 4 and the insulating part 10) in the photoelectric converting layer 4. The shape corresponds to the shape of the side surface). As a result, the insulating portion 10 is positioned so as to bite into the central portion side of the photoelectric conversion layer 4.
  • the insulating part 10 can suppress the arrival of conductive particles to the first region 3a where the photoelectric conversion layer 4 is not disposed, thereby suppressing an internal short circuit. Can do.
  • Embodiment 2 it is preferable that refractive index n 10 ⁇ refractive index n 4 , and in this case, the photoelectric conversion efficiency can be improved. The reason for this will be described with reference to FIG.
  • FIG. 15 is a schematic diagram illustrating a traveling direction of light from the photoelectric conversion layer 4 toward the insulating unit 10 in the photoelectric conversion element of the second embodiment.
  • the arrows indicate how light that has entered the photoelectric conversion layer 4 from the first substrate 1 side near the region B travels.
  • the refractive index n 10 ⁇ refractive index n 4 when the refractive index n 10 ⁇ refractive index n 4 is satisfied in the second embodiment, a part of the light incident on the vicinity of the region B in the photoelectric conversion layer 4 is at the interface between the photoelectric conversion layer 4 and the insulating portion 10. The light can be reflected toward the central portion side of the photoelectric conversion layer 4. The moving distance of the reflected light in the photoelectric conversion layer 4 is longer than that in the case where the reflected light is not reflected. Therefore, when the photoelectric conversion element of Embodiment 2 satisfies refractive index n 10 ⁇ refractive index n 4 , the photoelectric conversion efficiency can be improved.
  • the porous insulating layer 5 is porous. Therefore, the light reflection efficiency tends to be low. For this reason, the reflection effect as described above cannot be expected.
  • FIG. 16 is a schematic cross-sectional view of the photoelectric conversion element of Embodiment 3.
  • the third embodiment is different from the second embodiment in that a part of the porous insulating layer 5 is interposed between the insulating portion 10 and the photoelectric conversion layer 4. Also in the photoelectric conversion element of Embodiment 3, an internal short circuit can be suppressed for the same reason as in Embodiments 1 and 2.
  • the surface 10a of the insulating portion 10 facing the second substrate 2 and the surface 5a of the porous insulating layer 5 facing the second substrate 2 may be included in the same plane. preferable. In other words, the surface 10a and the surface 5a are preferably flush with each other. In this case, it is possible to eliminate the risk of poor formation of the catalyst layer 6 and the second conductive layer 7 due to an unnecessary step generated between the insulating portion 10 and the porous insulating layer 5.
  • the refractive index n 10 it is preferable that the refractive index n 10 ⁇ the refractive index n 4. In this case, the photoelectric conversion efficiency can be improved for the same reason as in the second embodiment.
  • At least the porous insulating layer 5 located between the insulating portion 10 and the photoelectric conversion layer 4 in the porous insulating layer 5 includes light scattering particles.
  • the light scattering particles can be dispersed in the porous insulating layer 5.
  • the light scattering particles a material having a refractive index different from that of the porous insulating layer 5 can be used.
  • a material having a refractive index different from that of the porous insulating layer 5 can be used.
  • titanium oxide or aluminum oxide is preferable.
  • the size of the light scattering particles is preferably a sphere having a diameter of 300 to 1000 nm, for example.
  • the sphere does not mean only a true sphere, and the surface thereof may be uneven.
  • Other preferable shapes that the light scattering particles can take include a flake shape and an elliptical shape.
  • the photoelectric conversion efficiency of a photoelectric conversion element is further improved by including such light scattering particles in the porous insulating layer 5 between the insulating portion 10 and the photoelectric conversion layer 4. Can do. The reason will be described below.
  • the incident angle of light at the interface between the photoelectric conversion layer 4 and the porous insulating layer 5 is not scattered by scattering the traveling direction of the light incident from the first substrate 1 side by the light scattering particles.
  • the probability of becoming larger is improved.
  • the incident angle of light at the interface increases, the light reflection efficiency at the interface improves, and as a result, the photoelectric conversion efficiency can be further improved.
  • the light scattering particles may be further coated with an insulating material such as silica or zirconia. Thereby, the fall of the resistance value of the porous insulating layer 5 resulting from presence of light-scattering particle
  • Embodiment 3 other than the above is the same as that of Embodiment 1 and Embodiment 2, and therefore description thereof will not be repeated.
  • FIG. 17 shows a schematic cross-sectional view of the photoelectric conversion element of Embodiment 4
  • FIG. 18 shows the photoelectric conversion element of Embodiment 4, in which the photoelectric conversion layer and the first substrate from the second substrate side
  • the typical top view which shows each projection image when an insulation part is projected is shown.
  • the insulating unit 10 is disposed so as to be in contact with all of the side surfaces (outer periphery) of the photoelectric conversion layer 4 and is a convex corresponding to the concave shape of the photoelectric conversion layer 4. It has a shape.
  • the insulating portion 10 according to the first embodiment is arranged not only on one side near the groove 11 in the photoelectric conversion layer 4 but also on all four sides of the photoelectric conversion layer 4. This is different from the first embodiment.
  • the vicinity of the region A is considered to be a region where the possibility of the occurrence of an internal short circuit is the highest, but there is a concern about the occurrence of an internal short circuit due to the misalignment of each part even on the outer periphery of the photoelectric conversion layer 4. Is done.
  • the fourth embodiment it is possible to suppress the occurrence of an internal short circuit that may occur on the outer periphery of the photoelectric conversion layer 4.
  • FIG. 19 is a schematic cross-sectional view of the photoelectric conversion element of Embodiment 5.
  • the insulating part 10 of Embodiment 2 is not only on one side near the groove 11 in the photoelectric conversion layer 4 but on all four sides of the photoelectric conversion layer 4. It is different from the second embodiment in that it is arranged. According to Embodiment 5, the occurrence of an internal short circuit that can occur on the outer periphery of the photoelectric conversion layer 4 can be suppressed.
  • FIG. 20 is a schematic cross-sectional view of the photoelectric conversion element of Embodiment 6.
  • the insulating unit 10 of Embodiment 3 is not only on one side near the groove 11 in the photoelectric conversion layer 4 but on all four sides of the photoelectric conversion layer 4. It is different from the third embodiment in that it is arranged. According to the sixth embodiment, it is possible to suppress the occurrence of an internal short circuit that may occur on the outer periphery of the photoelectric conversion layer 4.
  • FIG. 21 is a schematic cross-sectional view of the photoelectric conversion module according to the seventh embodiment. The structure of the photoelectric conversion module of Embodiment 7 will be described with reference to FIG.
  • the photoelectric conversion module according to Embodiment 7 includes a plurality of photoelectric conversion cells 100a, 100b, and 100c (100a to 100c), that is, the photoelectric conversion element according to Embodiment 1.
  • the photoelectric conversion cells 100 a to 100 c are partitioned into individual cells by the sealing material 8.
  • Each of the plurality of photoelectric conversion cells 100a to 100c includes a first conductive layer 3, a photoelectric conversion layer 4, a porous insulating layer 5, a catalyst layer 6, and a second conductive layer 7 on the first substrate 1. And an electrolyte 9 filled in a region surrounded by the first substrate 1, the second substrate 2, and the sealing material 8.
  • the photoelectric conversion cell 100a and the photoelectric conversion cell 100b are electrically connected in series by electrically connecting the first region 3a of the photoelectric conversion cell 100a and the second conductive layer 7 of the photoelectric conversion cell 100b.
  • the photoelectric conversion cell 100b and the photoelectric conversion cell 100c are electrically connected in series by electrically connecting the first region 3a of the photoelectric conversion cell 100b and the second conductive layer 7 of the photoelectric conversion cell 100c.
  • the photoelectric conversion cells 100a to 100c are connected in series.
  • First conductive layer forming step First, a glass substrate with SnO 2 film manufactured by Nippon Sheet Glass Co., Ltd. having a surface with a length of 120 mm ⁇ width of 420 mm is prepared, and SnO 2 is linearly formed along a direction perpendicular to the series connection direction by a laser scribing method. Two films were removed. As a result, the grooves 11 as the removed portions of the SnO 2 film are formed in stripes, and the SnO 2 as the first conductive layer 3 including the first region 3 a and the second region 3 b is formed on the glass substrate as the first substrate 1. Two films were formed in stripes.
  • the coating film obtained by leveling the titanium oxide paste at room temperature for 1 hour was preliminarily dried at 80 ° C. for 20 minutes and baked at 450 ° C. for 1 hour.
  • the first porous semiconductor layer made of titanium oxide having a thickness of 6 ⁇ m was formed by repeating the application process of the titanium oxide paste, the leveling process, the preliminary drying process, and the baking process in this order.
  • the glass paste containing glass frit (manufactured by Asahi Glass Co., Ltd., glass transition temperature: 450 ° C., softening point: 510 ° C.) is insulated using a screen printing machine (Nerong Precision Industries, Ltd., LS-34TVA). Application was performed at a position corresponding to the portion 10.
  • the coating film obtained by leveling the glass paste at room temperature for 1 hour was preliminarily dried at 80 ° C. for 20 minutes and baked at 540 ° C. for 1 hour. According to the above formation method, since the glass paste is solidified after being melted, an insulating portion having a lower porosity than the porous insulating layer to be formed later is formed.
  • a second porous semiconductor layer made of titanium oxide having a thickness of 6 ⁇ m was formed by a process similar to the process of forming the first porous semiconductor layer.
  • the porous semiconductor layer composed of the first porous semiconductor layer and the second porous semiconductor layer serves as a base material for the photoelectric conversion layer 4.
  • a paste containing zirconium oxide fine particles having a particle size of 100 nm (manufactured by C-I Kasei Co., Ltd., melting point 2700 ° C.) was prepared in the same manner as described above.
  • the prepared paste was applied onto the porous semiconductor layer using the screen plate used for the production of the porous semiconductor layer and a screen printing machine (LS-34TVA, manufactured by Neurong Seimitsu Kogyo). After leveling at room temperature for 1 hour, it was pre-dried at 80 ° C. for 20 minutes and baked at 450 ° C. for 1 hour. By this step, the porous insulating layer 5 having a thickness of 5 ⁇ m was formed on the porous semiconductor layer.
  • a photoelectric conversion layer 4 As a precursor of the sealing material 8, a photoelectric conversion layer 4, a porous insulating layer 5, a catalyst layer 6, and a second conductive layer 7 in which an ultraviolet curable resin (TB3035B (manufactured by Three Bond)) is laminated as described above. And it apply
  • an ultraviolet curable resin (TB3035B (manufactured by Three Bond)
  • the second substrate 2 which is a glass substrate is placed on the surface of the precursor of the sealing material 8 so as to face the first substrate 1, and the first substrate 1 and the second substrate 2 are bonded. Combined.
  • acetonitrile is used as a solvent, and 1,2-dimethyl-3-propylimidazolium iodide (manufactured by Shikoku Kasei Kogyo Co., Ltd.) is used therein.
  • LiI manufactured by Aldrich Chemical Company
  • 4-tert-butylpyridine (4-tert-butylpyridine (manufactured by Aldrich Chemical Company)) 0.5 mol / liter
  • I 2 A redox electrolyte solution in which 0.01 mol / liter (manufactured by Tokyo Chemical Industry Co., Ltd.) was dissolved was prepared.
  • Example 1 The photoelectric conversion element of Example 1 was produced by the above.
  • Example 1 the projected images of the photoelectric conversion layer 4 and the insulating unit 10 when the photoelectric conversion layer 4 and the insulating unit 10 are projected onto the first substrate 1 from the second substrate 2 side overlap as shown in FIG. It became a thing.
  • the width of the overlapping region was 200 ⁇ m, respectively (note that the width of the overlapping region on the four sides was the same).
  • Example 1 resistance of several tens of M ⁇ or more was measured in all the photoelectric conversion elements.
  • Comparative Example 1 a resistance of about several tens of k ⁇ was measured with 12 photoelectric conversion elements, and a resistance of several tens of ⁇ was measured with 40 photoelectric conversion elements.
  • Example 1 From the above measurement results, it was confirmed in Example 1 that the internal short circuit was suppressed in all the photoelectric conversion elements.
  • Comparative Example 1 in 40 photoelectric conversion elements out of 52, the resistance value was about several tens of ohms, so it was considered that an internal short circuit occurred.
  • twelve photoelectric conversion elements (those having a resistance of several tens of k ⁇ ) are compared with the photoelectric conversion element of Example 1 although it is considered that no internal short circuit has occurred. It was confirmed that the resistance value was low.
  • the insulating portion and the photoelectric conversion layer each have a surface facing the second substrate, and each of the facing surfaces is included in the same plane. Is preferred.
  • the insulating portion and the porous insulating layer each have a surface facing the second substrate, and each of the facing surfaces is included in the same surface. It is preferable.
  • the embodiments and examples disclosed herein can be used for so-called monolithic photoelectric conversion elements and photoelectric conversion modules, and in particular, can be used for dye-sensitized solar cells and dye-sensitized solar cell modules. it can.

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Abstract

L'invention porte sur un élément de conversion photoélectrique, comprenant un premier substrat (1), un second substrat (2), une première couche électroconductrice (3), une couche de conversion photoélectrique (4), une couche isolante poreuse (5), une seconde couche électroconductrice (7), une couche d'étanchéité (8) et un électrolyte (9). La couche de conversion photoélectrique (4) est pourvue d'une couche électroconductrice poreuse et d'un photosensibilisateur disposé sur la couche électroconductrice poreuse. La première couche électroconductrice (3) est divisée par une rainure (11) en une première région (3a), sur laquelle la couche de conversion photoélectrique (4) est placée, et une seconde région (3b), sur laquelle la couche de conversion photoélectrique (4) n'est pas placée. Une partie d'isolation (10) est placée sur la rainure (11), la partie d'isolation (10) recouvrant la surface de la première région (3a) sur laquelle la couche de conversion photoélectrique (4) n'est pas placée. La partie d'isolation (10) présente une structure plus fine que la couche isolante poreuse (5). Lorsqu'on projette la couche de conversion photoélectrique (4) et la partie d'isolation (10) à partir du côté second substrat (2) sur un plan parallèle au premier substrat (1), une partie de l'image projetée de la partie d'isolation (10) chevauche l'image projetée de la couche de conversion photoélectrique (4).
PCT/JP2016/077792 2015-09-25 2016-09-21 Élément de conversion photoélectrique et module de conversion photoélectrique WO2017051813A1 (fr)

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