WO2017049673A1 - 一种oled器件及阵列基板 - Google Patents

一种oled器件及阵列基板 Download PDF

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Publication number
WO2017049673A1
WO2017049673A1 PCT/CN2015/091747 CN2015091747W WO2017049673A1 WO 2017049673 A1 WO2017049673 A1 WO 2017049673A1 CN 2015091747 W CN2015091747 W CN 2015091747W WO 2017049673 A1 WO2017049673 A1 WO 2017049673A1
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Prior art keywords
layer
metal
transparent anode
transparent
oled device
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English (en)
French (fr)
Inventor
徐超
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/896,225 priority Critical patent/US20170263883A1/en
Publication of WO2017049673A1 publication Critical patent/WO2017049673A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/814—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED (Organic Light Emitting Diode) device and an array substrate.
  • OLED Organic Light Emitting Diode
  • the vertical resistance is mainly determined by the energy level structure of the device, the carrier mobility and the thickness of each film layer; the horizontal resistance is determined by the conductivity of the transparent electrode.
  • the horizontal resistance of the transparent anode ie, the resistance in the horizontal direction
  • the OLED is operated, when the current is applied from the edge of the transparent anode, it is difficult for the current to reach the central region of the transparent anode. Therefore, the OLED device is unevenly illuminated, especially when the brightness is increased, the phenomenon of uneven illumination is more pronounced.
  • An object of the present invention is to provide an OLED device and a display panel to solve the technical problem of uneven illumination of the existing OLED device.
  • the present invention provides the following technical solutions:
  • a hole injection layer disposed on the transparent anode layer for receiving holes output by the transparent anode
  • a hole transport layer disposed on the hole injection layer for transporting holes in the hole injection layer to the organic light-emitting layer
  • An organic light-emitting layer disposed on the hole transport layer for receiving holes transported by the hole transport layer and electrons transported by the electron transport layer, and emitting light according to the holes and the electrons;
  • An electron transport layer disposed on the organic light emitting layer for transmitting electrons output from the transparent cathode to the organic light emitting layer;
  • a transparent cathode disposed on the electron transport layer for outputting electrons to the electron transport layer under voltage driving
  • the transparent anode comprises:
  • the metal layer includes: a plurality of metal wires
  • the hole injection layer is specifically disposed on a surface of the second transparent anode layer; the surface of the second transparent anode layer is a flat surface.
  • the electrical conductivity of the first metal material is greater than the electrical conductivity of the first transparent material and the second transparent material;
  • the first metal material is a material of the metal wire
  • the first transparent material is a material of the first transparent anode layer
  • the second transparent material is a material of the second transparent anode layer.
  • the plurality of metal lines are alternately formed into a plurality of metal line grids.
  • the metal wire includes: a first metal line extending in a first direction and a second metal line extending in a second direction;
  • the line width of the first metal line and the second metal line are different.
  • the metal wire includes: a first metal line extending in a first direction and a second metal line extending in a second direction; and the first metal line and the second metal line The thickness is not the same.
  • Embodiments of the present invention also provide another OLED device, including:
  • a hole injection layer disposed on the transparent anode layer for receiving holes output by the transparent anode
  • a hole transport layer disposed on the hole injection layer for transporting holes in the hole injection layer to the organic light-emitting layer
  • An organic light-emitting layer disposed on the hole transport layer for receiving holes transported by the hole transport layer and electrons transported by the electron transport layer, and emitting light according to the holes and the electrons;
  • An electron transport layer disposed on the organic light emitting layer for transmitting electrons output from the transparent cathode to the organic light emitting layer;
  • a transparent cathode disposed on the electron transport layer for outputting electrons to the electron transport layer under voltage driving
  • the transparent anode comprises:
  • a metal layer disposed on a surface of the first transparent anode layer and completely covering a surface of the first transparent layer for reducing a resistance of the transparent anode of the OLED device in a horizontal direction;
  • a second transparent anode layer is disposed on the metal layer.
  • the metal layer includes: a plurality of metal lines.
  • the electrical conductivity of the first metal material is greater than the electrical conductivity of the first transparent material and the second transparent material;
  • the first metal material is a material of the metal wire
  • the first transparent material is a material of the first transparent anode layer
  • the second transparent material is a material of the second transparent anode layer.
  • the plurality of metal lines are alternately formed into a plurality of metal line grids.
  • the metal wire includes: a first metal line extending in a first direction and a second metal line extending in a second direction;
  • the line width of the first metal line and the second metal line are different.
  • the metal wire includes: a first metal line extending in a first direction and a second metal line extending in a second direction; and the first metal line and the second metal line The thickness is not the same.
  • the hole injection layer is disposed on a surface of the second transparent anode layer; and a surface of the second transparent anode layer is a flat surface.
  • An embodiment of the present invention further provides an OLED array substrate, including:
  • An OLED device disposed on the substrate substrate
  • a thin film transistor disposed on the substrate substrate for controlling illumination of a corresponding OLED device
  • the OLED device includes:
  • a hole injection layer disposed on the transparent anode layer for receiving holes output by the transparent anode
  • a hole transport layer disposed on the hole injection layer for transporting holes in the hole injection layer to the organic light-emitting layer
  • An organic light-emitting layer disposed on the hole transport layer for receiving holes transported by the hole transport layer and electrons transported by the electron transport layer, and emitting light according to the holes and the electrons;
  • An electron transport layer disposed on the organic light emitting layer for transmitting electrons output from the transparent cathode to the organic light emitting layer;
  • a transparent cathode disposed on the electron transport layer for outputting electrons to the electron transport layer under voltage driving
  • the transparent anode comprises:
  • a metal layer disposed on a surface of the first transparent anode layer and completely covering a surface of the first transparent layer for reducing a resistance of the transparent anode of the OLED device in a horizontal direction;
  • a second transparent anode layer is disposed on the metal layer.
  • the metal layer includes: a plurality of metal lines.
  • the plurality of metal lines are alternately formed into a plurality of metal line grids.
  • the electrical conductivity of the first metal material is greater than the electrical conductivity of the first transparent material and the second transparent material;
  • the first metal material is a material of the metal wire
  • the first transparent material is a material of the first transparent anode layer
  • the second transparent material is a material of the second transparent anode layer.
  • the metal wire includes: a first metal line extending in a first direction and a second metal line extending in a second direction;
  • the line width of the first metal line and the second metal line are different.
  • the metal line includes: a first metal line extending in a first direction and a second metal line extending in a second direction; the first metal line and the second metal line The thickness is not the same.
  • the hole injection layer is disposed on a surface of the second transparent anode layer; and a surface of the second transparent anode layer is a flat surface.
  • Embodiments of the present invention provide an OLED device and an array substrate.
  • the OLED device provided by the embodiment of the present invention reduces the transparent anode by providing two transparent anode layers and disposing a metal layer between the two transparent anode layers.
  • the resistance in the horizontal direction improves the horizontal conductive ability of the transparent anode, thereby solving the problem that the OLED device has uneven illumination due to the large horizontal resistance of the transparent anode, and improves the quality of the picture display.
  • FIG. 1 is a schematic structural diagram of an OLED device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a metal layer according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram of a first step of a method for fabricating an OLED device according to Embodiment 1 of the present invention
  • FIG. 4 is a schematic diagram of a second step of a method for fabricating an OLED device according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram of a third step of a method for fabricating an OLED device according to Embodiment 1 of the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the embodiment provides an OLED device, including:
  • a substrate substrate 11, preferably a glass substrate;
  • the transparent anode 12 is disposed on the substrate substrate 11 for outputting holes (or carriers) under voltage driving; for example, when the OLED device is in operation, the transparent anode 12 is connected to the positive electrode of the driving voltage, and the transparent cathode 17 is connected.
  • a hole injection layer 13 disposed on the transparent anode layer 12 for receiving holes output by the transparent anode
  • the hole transport layer 14 is disposed on the hole injection layer 13 for transporting holes in the hole injection layer to the organic light-emitting layer 15; the hole transport layer 14 of the embodiment can reduce the transparent anode 12 The interface barrier between the hole transport layer 14 increases the adhesion between the transparent anode 12 and the hole transport layer 14, and increases the hole injection contact;
  • An organic light-emitting layer 15 is disposed on the hole transport layer 14 for receiving holes transported by the hole transport layer 14 and electrons transported by the electron transport layer 16, and is performed according to the holes and the electrons Illuminating; specifically, the organic light-emitting layer releases energy in the form of photons when the electrons and holes meet, that is, emits light;
  • the transparent anode 12 comprises:
  • horizontal resistance a metal layer 122 disposed on a surface of the first transparent anode layer 121 and completely covering a surface of the first transparent layer 121 for reducing resistance of the transparent anode 12 of the OLED device in a horizontal direction (hereinafter referred to as horizontal resistance);
  • a second transparent anode layer 123 is disposed on the metal layer 122.
  • the OLED device provided by the embodiment of the invention provides two transparent anode layers and a metal layer between the two transparent anode layers to reduce the resistance of the transparent anode in the horizontal direction and improve the horizontal conductivity of the transparent anode;
  • a resistor ie, the resistance of the metal layer
  • the current is increased compared to the existing OLED device.
  • the current can reach the central region of the transparent anode when the input is input from the transparent anode edge, thereby making the OLED device emit light uniformly, and solving the problem.
  • the existing OLED device has a problem of uneven illumination due to a large horizontal resistance of the transparent anode, thereby improving the quality of the picture display.
  • the metal layer 122 includes a plurality of metal lines 1220.
  • the metal layer 122 may be composed of a plurality of metal lines, which can reduce the cost, and can also change the metal line. The amount of the transparent anode which is actually required to have a certain level of resistance is realized, and the implementation is simple and convenient.
  • the electrical conductivity of the metal material of the metal layer 122 in this embodiment is greater than the electrical conductivity of the materials of the first transparent anode layer 121 and the second transparent anode layer 123.
  • the conductivity of the material of the first transparent anode layer 121 and the second transparent anode layer 123 may be the same or different.
  • the plurality of metal wires 1220 are alternately formed in this embodiment.
  • a plurality of metal wire grids 1223 as shown in FIG. 2, two adjacent lateral metal lines and two adjacent longitudinal metal lines are alternately formed to form a metal wire grid 1223, and the metal network 1223 shown in FIG. 2 has a square shape. It can be easily fabricated.
  • the shape of the metal mesh can also be triangular, hexagonal or rectangular, and the shape of the metal mesh can be set according to actual needs.
  • the metal wire 1220 in this embodiment may include: a first metal wire extending in a first direction, such as a lateral metal wire in FIG. And a second metal wire extending in a second direction, such as a longitudinal metal wire in FIG. 2;
  • the line width of the first metal line and the second metal line are different.
  • the width of the transverse metal lines and the longitudinal metal lines are not equal.
  • the width of the metal line can be set in combination with the current input direction; for example, when the current input direction is the same as the first direction, the width of the first metal line can be set to be larger than the width of the second metal line, and the first metal line can be lowered.
  • the resistance is such that the input current can quickly reach the center region, further improving the uniformity of illumination of the OLED device.
  • the width of the lateral metal wire may be set to be larger than the width of the vertical metal wire, and the resistance of the lateral metal wire may be lowered, so that the current of the lateral input express reaches the central region, thereby further improving the illumination of the OLED device. Uniformity and efficiency.
  • the metal wire 1220 in this embodiment may include: a first metal wire extending in a first direction, such as a lateral metal wire in FIG. 2, and a second metal wire extending in a second direction. , for example, the longitudinal metal wire in Figure 2;
  • the thickness of the first metal line and the second metal line are different, for example, the thickness of the vertical metal line and the lateral metal line in FIG. 2 are different.
  • the width of the metal line can be set in combination with the current input direction; for example, when the current input direction is the same as the first direction, the thickness of the first metal line can be set to be larger than the thickness of the second metal line, and the first metal line can be lowered.
  • the resistance is such that the input current can quickly reach the center region, further improving the uniformity of illumination of the OLED device.
  • the thickness of the lateral metal wire may be set to be larger than the thickness of the vertical metal wire, and the resistance of the lateral metal wire may be lowered, so that the current of the lateral input express reaches the central region, thereby further improving the illumination of the OLED device. Uniformity and efficiency.
  • the hole injection layer 13 is disposed on the second transparent anode layer in this embodiment.
  • the surface of 123; the surface of the second transparent anode layer 123 is a flat surface. That is, the contact surface of the second transparent anode layer 123 and the hole injection layer 13 is flattened.
  • This embodiment also provides a method of fabricating the OLED device shown in FIG. 1, the method comprising the following steps:
  • a first transparent anode layer 12 is formed on the substrate substrate 11, with reference to FIG.
  • the first anode material may be plated on the substrate substrate 11 (generally using a glass substrate) by PVD/evaporation or the like to form a first transparent anode layer 12, which is transparent conductive such as ITO/AZO.
  • the film ensures good adhesion of the film to the glass.
  • the metal layer 122 may be composed of a plurality of metal lines 1220, wherein the metal lines 1220 are alternately formed into a metal mesh, as shown in FIG. 2; at this time, a highly conductive metal may be formed on the first layer of anode material by screen printing or the like.
  • the wire mesh and the metal mesh wire material may be selected from a conductive silver paste/carbon nanotube solution.
  • the anode material may be coated again on the metal wire 1220 by PVD or coating or patterning to form the second transparent anode layer 123 until the upper surface of the second anode layer 123 is flat.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • This embodiment provides an OLED array substrate, including:
  • An OLED device disposed on the substrate substrate
  • a thin film transistor disposed on the substrate substrate for controlling illumination of a corresponding OLED device
  • OLED devices with reference to Figure 1, include:
  • the transparent anode 12 is disposed on the substrate substrate 11 for outputting holes under voltage driving; for example, when the OLED device is in operation, the transparent anode 12 is connected to the positive electrode of the driving voltage, and the transparent cathode 17 is connected to the negative electrode of the driving voltage;
  • a hole injection layer 13 disposed on the transparent anode layer 12 for receiving holes output by the transparent anode
  • the hole transport layer 14 is disposed on the hole injection layer 13 for transporting holes in the hole injection layer to the organic light-emitting layer 15; the hole transport layer 14 of the embodiment can reduce the transparent anode 12 The interface barrier between the hole transport layer 14 increases the adhesion between the transparent anode 12 and the hole transport layer 14, and increases the hole injection contact;
  • An organic light-emitting layer 15 is disposed on the hole transport layer 14 for receiving holes transported by the hole transport layer 14 and electrons transported by the electron transport layer 16, and is performed according to the holes and the electrons Illuminating; specifically, the organic light-emitting layer releases energy in the form of photons when the electrons and holes meet, that is, emits light;
  • the transparent anode 12 comprises:
  • horizontal resistance a metal layer 122 disposed on a surface of the first transparent anode layer 121 and completely covering a surface of the first transparent layer 121 for reducing resistance of the transparent anode 12 of the OLED device in a horizontal direction (hereinafter referred to as horizontal resistance);
  • a second transparent anode layer 123 is disposed on the metal layer 122.
  • the OLED device provided by the embodiment of the invention provides two transparent anode layers and a metal layer between the two transparent anode layers to reduce the resistance of the transparent anode in the horizontal direction and improve the horizontal conductivity of the transparent anode;
  • a resistor ie, the resistance of the metal layer
  • the current is increased compared to the existing OLED device.
  • the current can reach the central region of the transparent anode when the input is input from the transparent anode edge, thereby making the OLED device emit light uniformly, and solving the problem.
  • the existing OLED device has a problem of uneven illumination due to a large horizontal resistance of the transparent anode, thereby improving the quality of the picture display.
  • the metal layer 122 includes a plurality of metal lines 1220.
  • the metal layer 122 may be composed of a plurality of metal lines, which can reduce the cost, and can also change the number of metal lines. It is simple and convenient to implement a transparent anode which is required to have a certain level of resistance.
  • the metal layer 122 includes a plurality of metal lines 1220.
  • the metal layer 122 may be composed of a plurality of metal lines, which can reduce the cost, and can also change the metal line. The amount of the transparent anode which is actually required to have a certain level of resistance is realized, and the implementation is simple and convenient.
  • two transparent anode layers are disposed in the OLED device, and a metal layer is disposed between the two transparent anode layers to reduce the resistance of the transparent anode in the horizontal direction and improve the horizontal conductivity of the transparent anode.
  • the ability to solve the problem of uneven illumination caused by the large horizontal resistance of the transparent anode of the OLED device improves the quality of the picture display.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED器件及阵列基板。OLED器件通过设置两个透明阳极层(121、123)，并在两个透明阳极层（121、123）之间设置金属层（122），以减少透明阳极在水平方向上的电阻，提高透明阳极水平导电能力，从而解决了OLED器件由于透明阳极水平电阻较大导致的发光不均匀的问题，提高画面显示的品质。

Description

一种OLED器件及阵列基板 技术领域
本发明涉及显示技术领域，特别是涉及一种OLED（有机发光二级管）器件及阵列基板。
 背景技术
目前在大面积OLED（有机发光二级管）显示面板的工作过程中，常出现发光不均匀的现象。产生该现象的原因有多种，主要原因是垂直电阻分布不均及水平电阻过大等导致的。其中，垂直电阻主要由器件的能级结构、载流子迁移率和各膜层的厚度决定；水平电阻由透明电极的电导率决定。
目前制作低水平电阻的透明电极比较困难，所以目前透明阳极的水平电阻（即在水平方向上的电阻）比较高，在OLED工作，电流从透明阳极边缘施加时，电流很难到达透明阳极中心区域，因此，导致OLED器件发光不均匀，尤其是当增加亮度时，发光不均匀的现象更为明显。
因此，有必要提供一种OLED器件及显示面板，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种OLED器件及显示面板，以解决现有OLED器件发光不均匀的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供如下技术方案：
本发明的实施例提供了一种OLED器件，包括：
透明阳极，用于在电压驱动下，输出空穴；
空穴注入层，设置在所述透明阳极层上，用于接收所述透明阳极输出的空穴；
空穴传输层，设置在所述空穴注入层上，用于将所述空穴注入层中的空穴传输至有机发光层；
有机发光层，设置在所述空穴传输层上，用于接收所述空穴传输层传输的空穴和电子传输层传输的电子，并根据所述空穴和所述电子进行发光；
电子传输层，设置在所述有机发光层上，用于将透明阴极输出的电子传输给所述有机发光层；以及
透明阴极，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层；
其中，所述透明阳极包括：
第一透明阳极层；
金属层，设置在所述第一透明阳极层的表面，且完全覆盖所述第一透明层的表面，用于减小所述OLED器件的所述透明阳极在水平方向上的电阻；所述金属层包括：多条金属线；
第二透明阳极层，设置在所述金属层上；
所述空穴注入层具体设置在所述第二透明阳极层的表面；所述第二透明阳极层的表面为平整的表面。
在本发明的OLED器件中，第一金属材质的电导率大于第一透明材质和第二透明材质的电导率；
所第一金属材质为所述金属线的材质；
所述第一透明材质为所述第一透明阳极层的材质；
所述第二透明材质为第所述第二透明阳极层的材质。
在本发明的OLED器件中，所述多条金属线交错形成多个金属线网格。
在本发明的OLED器件中，所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；
所述第一金属线与所述第二金属线的线宽不相同。
在本发明的OLED器件中，所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；所述第一金属线与所述第二金属线的厚度不相同。
本发明的实施例还提供了另一种OLED器件，包括：
透明阳极，用于在电压驱动下，输出空穴；
空穴注入层，设置在所述透明阳极层上，用于接收所述透明阳极输出的空穴；
空穴传输层，设置在所述空穴注入层上，用于将所述空穴注入层中的空穴传输至有机发光层；
有机发光层，设置在所述空穴传输层上，用于接收所述空穴传输层传输的空穴和电子传输层传输的电子，并根据所述空穴和所述电子进行发光；
电子传输层，设置在所述有机发光层上，用于将透明阴极输出的电子传输给所述有机发光层；以及
透明阴极，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层；
其中，所述透明阳极包括：
第一透明阳极层；
金属层，设置在所述第一透明阳极层的表面，且完全覆盖所述第一透明层的表面，用于减小所述OLED器件的所述透明阳极在水平方向上的电阻；以及
第二透明阳极层，设置在所述金属层上。
在本发明的OLED器件中，
所述金属层包括：多条金属线。
在本发明的OLED器件中，
第一金属材质的电导率大于第一透明材质和第二透明材质的电导率；
所第一金属材质为所述金属线的材质；
所述第一透明材质为所述第一透明阳极层的材质；
所述第二透明材质为第所述第二透明阳极层的材质。
在本发明的OLED器件中，所述多条金属线交错形成多个金属线网格。
在本发明的OLED器件中，所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；
所述第一金属线与所述第二金属线的线宽不相同。
在本发明的OLED器件中，所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；所述第一金属线与所述第二金属线的厚度不相同。
在本发明的OLED器件中，所述空穴注入层设置在所述第二透明阳极层的表面；所述第二透明阳极层的表面为平整的表面。
本发明的实施例还提供了一种OLED阵列基板，包括：
基板衬底；
OLED器件，设置在所述基板衬底上；
薄膜晶体管，设置在所述基板衬底上，用于控制对应的OLED器件发光；
所述OLED器件，包括：
透明阳极，用于在电压驱动下，输出空穴；
空穴注入层，设置在所述透明阳极层上，用于接收所述透明阳极输出的空穴；
空穴传输层，设置在所述空穴注入层上，用于将所述空穴注入层中的空穴传输至有机发光层；
有机发光层，设置在所述空穴传输层上，用于接收所述空穴传输层传输的空穴和电子传输层传输的电子，并根据所述空穴和所述电子进行发光；
电子传输层，设置在所述有机发光层上，用于将透明阴极输出的电子传输给所述有机发光层；以及
透明阴极，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层；
其中，所述透明阳极包括：
第一透明阳极层；
金属层，设置在所述第一透明阳极层的表面，且完全覆盖所述第一透明层的表面，用于减小所述OLED器件的所述透明阳极在水平方向上的电阻；以及
第二透明阳极层，设置在所述金属层上。
在本发明的OLED阵列基板中，所述金属层包括：多条金属线。
在本发明的OLED阵列基板中，所述多条金属线交错形成多个金属线网格。
在本发明的OLED阵列基板中，第一金属材质的电导率大于第一透明材质和第二透明材质的电导率；
所第一金属材质为所述金属线的材质；
所述第一透明材质为所述第一透明阳极层的材质；
所述第二透明材质为第所述第二透明阳极层的材质。
在本发明的OLED阵列基板中，所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；
所述第一金属线与所述第二金属线的线宽不相同。
在本发明的OLED阵列基板中，所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；所述第一金属线与所述第二金属线的厚度不相同。
在本发明的OLED阵列基板中，所述空穴注入层设置在所述第二透明阳极层的表面；所述第二透明阳极层的表面为平整的表面。
 有益效果
本发明的实施例提供了一种OLED器件及阵列基板；本发明的实施例提供的OLED器件通过设置两个透明阳极层，并在两个透明阳极层之间设置金属层，以减少透明阳极在水平方向上的电阻，提高透明阳极水平导电能力，从而解决了OLED器件由于透明阳极水平电阻较大导致的发光不均匀的问题，提高画面显示的品质。
 附图说明
图1为本发明实施例提供的一种OLED器件的结构示意图；
图2为本发明实施例一提供的一种金属层的结构示意图；
图3为本发明实施例一提供的一种OLED器件制作方法的第一步示意图；
图4为本发明实施例一提供的一种OLED器件制作方法的第二步示意图；
图5为本发明实施例一提供的一种OLED器件制作方法的第三步示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
实施例一：
参考图1，本实施例提供了一种OLED器件，包括：
基板衬底11，优选地为玻璃基板；
透明阳极12，设置在基板衬底11上，用于在电压驱动下，输出空穴(或者称为载流子)；例如OLED器件工作时，透明阳极12接驱动电压的正极，透明阴极17接驱动电压的负极；
空穴注入层13，设置在所述透明阳极层12上，用于接收所述透明阳极输出的空穴；
空穴传输层14，设置在所述空穴注入层13上，用于将所述空穴注入层中的空穴传输至有机发光层15；本实施例空穴传输层14可以降低透明阳极12与空穴传输层14之间的界面势垒，增加透明阳极12与空穴传输层14之间黏合成都，增大空穴注入接触等；
有机发光层15，设置在所述空穴传输层14上，用于接收所述空穴传输层14传输的空穴和电子传输层16传输的电子，并根据所述空穴和所述电子进行发光；具体地，有机发光层在电子和空穴相遇时，以光子的形式释放能量，即发光；
电子传输层16，设置在所述有机发光层15上，用于将透明阴极17输出的电子传输给所述有机发光层；以及
透明阴极17，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层16；
其中，所述透明阳极12包括：
第一透明阳极层121；
金属层122，设置在所述第一透明阳极层121的表面，且完全覆盖所述第一透明层121的表面，用于减小所述OLED器件的所述透明阳极12在水平方向上的电阻（以下简称水平电阻）；以及
第二透明阳极层123，设置在所述金属层122上。
本发明的实施例提供的OLED器件通过设置两个透明阳极层，并在两个透明阳极层之间设置金属层，以减少透明阳极在水平方向上的电阻，提高透明阳极水平导电能力；相当于给透明阳极并联了一个电阻（即金属层的电阻），拉低了原本透明阳极的水平电阻；
由于减少了透明阳的水平电阻，相比现有OLED器件增大了电流，在OLED器件工作，驱动从透明阳极边缘输入时，电流可以达到透明阳极的中心区域，进而使得OLED器件发光均匀，解决了现有OLED器件由于透明阳极水平电阻较大导致的发光不均匀的问题，提高画面显示的品质。
优选地，如图2所示，本实施例中金属层122包括多条金属线1220，本实施例中金属层122可以由多条金属线构成，可以减少成本，另外，还可以通过改变金属线的数量实现制作实际所需具有一定水平电阻值的透明阳极，实施简单方便。
为了可以进一步降低透明阳极122水平电阻，优选地，本实施例中金属层122的金属材质的电导率大于第一透明阳极层121和第二透明阳极层123的材质的电导率。其中第一透明阳极层121与第二透明阳极层123的材质的电导率可以相同，也可以不同。
优选地，为了在有限的空间中制作出更多的金属线1220，、使金属层122水平电阻呈均匀分布，以及降低OLED器件垂直方向上的电阻，本实施例中多条金属线1220交错形成多个金属线网格1223；如图2所示，相邻两条横向金属线与相邻两条纵向金属线交错形成金属线网格1223，图2所示的金属网络1223的形状为正方形，可以方便制作，然而在其他实施例中金属网格的形状还可以三角形、六边形或者长方形等，该金属网格的形状可以根据实际需求设定。
优选地，为适用于各种实际工作场景，或者进一步提升OLED器件发光的均匀性，本实施例中金属线1220可以包括：向第一方向延伸的第一金属线，例如图2中横向金属线，和向第二方向延伸的第二金属线，例如图2中纵向金属线；
其中，所述第一金属线与所述第二金属线的线宽不相同。例如图2中，横向金属线与纵向金属线的宽度不相等。
在实际应用中，可以结合电流输入方向来设置金属线的宽度；比如电流输入方向与第一方向相同时，那么可以设置第一金属线的宽度大于第二金属线的宽度，降低第一金属线的电阻，以使得输入电流可以快速到达中心区域，进一步提升OLED器件发光的均匀性。参考图2，如果横向输入驱动电流，那么可以设置横向金属线的宽度大于纵向金属线的宽度，降低横向金属线的电阻，以使得横向输入的电流快递到达中心区域，提高了进一步提升OLED器件发光的均匀性和效率。
优选地，考虑到OLED实际工作场景，本实施例中金属线1220可以包括：向第一方向延伸的第一金属线，例如图2中横向金属线，和向第二方向延伸的第二金属线，例如图2中纵向金属线；
第一金属线与所述第二金属线的厚度不相同，例如图2中纵向金属线与横向金属线的厚度不相同。
在实际应用中，可以结合电流输入方向来设置金属线的宽度；比如电流输入方向与第一方向相同时，那么可以设置第一金属线的厚度大于第二金属线的厚度，降低第一金属线的电阻，以使得输入电流可以快速到达中心区域，进一步提升OLED器件发光的均匀性。参考图2，如果横向输入驱动电流，那么可以设置横向金属线的厚度大于纵向金属线的厚度，降低横向金属线的电阻，以使得横向输入的电流快递到达中心区域，提高了进一步提升OLED器件发光的均匀性和效率。
为保证透明阳极12与空穴注入层13之间具有良好的界面接触以及能级匹配，便于空穴的注入和传；参考图1，本实施例中空穴注入层13设置在第二透明阳极层123的表面；第二透明阳极层123的表面为平整的表面。也即将第二透明阳极层123与空穴注入层13的接触面做平整。
本实施例还提供了一种制作图1所示的OLED器件的方法，该方法包括如下步骤：
S101，在基板衬底11上形成第一透明阳极层12，参考图3。
具体地，可以采用PVD/蒸镀等方式，在基板衬底11（一般采用玻璃基板）上镀第一层阳极材料，形成第一透明阳极层12，该透明阳极材料为ITO/AZO等透明导电薄膜，确保薄膜与玻璃有良好的黏附性。
S102，在第一透明阳极层12上形成金属层122，参考图4。
具体地，金属层122可以由多条金属线1220构成，其中金属线1220交错形成金属网格，参考图2；此时，可以采用网印等方式在第一层阳极材料上形成高导的金属网线，金属网线材料可以选用导电银浆/碳纳米管溶液等。
S103，在金属层122上形成第二透明阳极层123，参考图5。
具体地，可以采用PVD或者涂布或者旋图方式在金属线1220上再次涂覆阳极材料，形成第二透明阳极层123，直至第二阳极层123的上表面平整。
S104，在第二透明阳极层123的上表面依次，形成空穴注入层13、空穴传输层14、有机发光层15、电子传输层16、透明阴极17，参考图1.
实施例二：
本实施例提供了一种OLED阵列基板，包括：
基板衬底；
OLED器件，设置在所述基板衬底上；
薄膜晶体管，设置在所述基板衬底上，用于控制对应的OLED器件发光；
OLED器件，参考图1，包括：
透明阳极12，设置在基板衬底11上，用于在电压驱动下，输出空穴；例如OLED器件工作时，透明阳极12接驱动电压的正极，透明阴极17接驱动电压的负极；
空穴注入层13，设置在所述透明阳极层12上，用于接收所述透明阳极输出的空穴；
空穴传输层14，设置在所述空穴注入层13上，用于将所述空穴注入层中的空穴传输至有机发光层15；本实施例空穴传输层14可以降低透明阳极12与空穴传输层14之间的界面势垒，增加透明阳极12与空穴传输层14之间黏合成都，增大空穴注入接触等；
有机发光层15，设置在所述空穴传输层14上，用于接收所述空穴传输层14传输的空穴和电子传输层16传输的电子，并根据所述空穴和所述电子进行发光；具体地，有机发光层在电子和空穴相遇时，以光子的形式释放能量，即发光；
电子传输层16，设置在所述有机发光层15上，用于将透明阴极17输出的电子传输给所述有机发光层；以及
透明阴极17，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层16；
其中，所述透明阳极12包括：
第一透明阳极层121；
金属层122，设置在所述第一透明阳极层121的表面，且完全覆盖所述第一透明层121的表面，用于减小所述OLED器件的所述透明阳极12在水平方向上的电阻（以下简称水平电阻）；以及
第二透明阳极层123，设置在所述金属层122上。
本发明的实施例提供的OLED器件通过设置两个透明阳极层，并在两个透明阳极层之间设置金属层，以减少透明阳极在水平方向上的电阻，提高透明阳极水平导电能力；相当于给透明阳极并联了一个电阻（即金属层的电阻），拉低了原本透明阳极的水平电阻；
由于减少了透明阳的水平电阻，相比现有OLED器件增大了电流，在OLED器件工作，驱动从透明阳极边缘输入时，电流可以达到透明阳极的中心区域，进而使得OLED器件发光均匀，解决了现有OLED器件由于透明阳极水平电阻较大导致的发光不均匀的问题，提高画面显示的品质。
优选地，参考图2，本实施例中金属层122包括多条金属线1220，本实施例中金属层122可以由多条金属线构成，可以减少成本，另外，还可以通过改变金属线的数量实现制作实际所需具有一定水平电阻值的透明阳极，实施简单方便。
优选地，如图2所示，本实施例中金属层122包括多条金属线1220，本实施例中金属层122可以由多条金属线构成，可以减少成本，另外，还可以通过改变金属线的数量实现制作实际所需具有一定水平电阻值的透明阳极，实施简单方便。
本实施例提供的OLED阵列基板，在OLED器件中通过设置两个透明阳极层，并在两个透明阳极层之间设置金属层，以减少透明阳极在水平方向上的电阻，提高透明阳极水平导电能力，从而解决了OLED器件由于透明阳极水平电阻较大导致的发光不均匀的问题，提高画面显示的品质。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED器件，其包括：
    透明阳极，用于在电压驱动下，输出空穴；
    空穴注入层，设置在所述透明阳极层上，用于接收所述透明阳极输出的空穴；
    空穴传输层，设置在所述空穴注入层上，用于将所述空穴注入层中的空穴传输至有机发光层；
    有机发光层，设置在所述空穴传输层上，用于接收所述空穴传输层传输的空穴和电子传输层传输的电子，并根据所述空穴和所述电子进行发光；
    电子传输层，设置在所述有机发光层上，用于将透明阴极输出的电子传输给所述有机发光层；以及
    透明阴极，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层；
    其中，所述透明阳极包括：
    第一透明阳极层；
    金属层，设置在所述第一透明阳极层的表面，且完全覆盖所述第一透明层的表面，用于减小所述OLED器件的所述透明阳极在水平方向上的电阻；所述金属层包括：多条金属线；
    第二透明阳极层，设置在所述金属层上；
    所述空穴注入层具体设置在所述第二透明阳极层的表面；所述第二透明阳极层的表面为平整的表面。
  2. 如权利要求1所述的OLED器件，其中第一金属材质的电导率大于第一透明材质和第二透明材质的电导率；
    所第一金属材质为所述金属线的材质；
    所述第一透明材质为所述第一透明阳极层的材质；
    所述第二透明材质为第所述第二透明阳极层的材质。
  3. 如权利要求1所述的OLED器件，其中所述多条金属线交错形成多个金属线网格。
  4. 如权利要求1所述的OLED器件，其中所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；
    所述第一金属线与所述第二金属线的线宽不相同。
  5. 如权利要求1所述的OLED器件，其中所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；所述第一金属线与所述第二金属线的厚度不相同。
  6. 如权利要求2所述的的OLED器件，其中所述多条金属线交错形成多个金属线网格。
  7. 一种OLED器件，其包括：
    透明阳极，用于在电压驱动下，输出空穴；
    空穴注入层，设置在所述透明阳极层上，用于接收所述透明阳极输出的空穴；
    空穴传输层，设置在所述空穴注入层上，用于将所述空穴注入层中的空穴传输至有机发光层；
    有机发光层，设置在所述空穴传输层上，用于接收所述空穴传输层传输的空穴和电子传输层传输的电子，并根据所述空穴和所述电子进行发光；
    电子传输层，设置在所述有机发光层上，用于将透明阴极输出的电子传输给所述有机发光层；以及
    透明阴极，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层；
    其中，所述透明阳极包括：
    第一透明阳极层；
    金属层，设置在所述第一透明阳极层的表面，且完全覆盖所述第一透明层的表面，用于减小所述OLED器件的所述透明阳极在水平方向上的电阻；以及
    第二透明阳极层，设置在所述金属层上。
  8. 如权利要求7所述的OLED器件，其中所述金属层包括：多条金属线。
  9. 如权利要求8所述的OLED器件，其中第一金属材质的电导率大于第一透明材质和第二透明材质的电导率；
    所第一金属材质为所述金属线的材质；
    所述第一透明材质为所述第一透明阳极层的材质；
    所述第二透明材质为第所述第二透明阳极层的材质。
  10. 如权利要求8所述的OLED器件，其中所述多条金属线交错形成多个金属线网格。
  11. 如权利要求8所述的OLED器件，其中所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；
    所述第一金属线与所述第二金属线的线宽不相同。
  12. 如权利要求8所述的OLED器件，其中所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；所述第一金属线与所述第二金属线的厚度不相同。
  13. 如权利要求7所述的OLED器件，其中所述空穴注入层设置在所述第二透明阳极层的表面；所述第二透明阳极层的表面为平整的表面。
  14. 一种OLED阵列基板，其包括：
    基板衬底；
    OLED器件，设置在所述基板衬底上；
    薄膜晶体管，设置在所述基板衬底上，用于控制对应的OLED器件发光；
    所述OLED器件，包括：
    透明阳极，用于在电压驱动下，输出空穴；
    空穴注入层，设置在所述透明阳极层上，用于接收所述透明阳极输出的空穴；
    空穴传输层，设置在所述空穴注入层上，用于将所述空穴注入层中的空穴传输至有机发光层；
    有机发光层，设置在所述空穴传输层上，用于接收所述空穴传输层传输的空穴和电子传输层传输的电子，并根据所述空穴和所述电子进行发光；
    电子传输层，设置在所述有机发光层上，用于将透明阴极输出的电子传输给所述有机发光层；以及
    透明阴极，设置在所述电子传输层上，用于在电压驱动下输出电子给所述电子传输层；
    其中，所述透明阳极包括：
    第一透明阳极层；
    金属层，设置在所述第一透明阳极层的表面，且完全覆盖所述第一透明层的表面，用于减小所述OLED器件的所述透明阳极在水平方向上的电阻；以及
    第二透明阳极层，设置在所述金属层上。
  15. 如权利要求14所述的OLED阵列基板，其中所述金属层包括：多条金属线。
  16. 如权利要求15所述的OLED阵列基板，其中所述多条金属线交错形成多个金属线网格。
  17. 如权利要求15所述的OLED阵列基板，其中第一金属材质的电导率大于第一透明材质和第二透明材质的电导率；
    所第一金属材质为所述金属线的材质；
    所述第一透明材质为所述第一透明阳极层的材质；
    所述第二透明材质为第所述第二透明阳极层的材质。
  18. 如权利要求15所述的OLED阵列基板，其中所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；
    所述第一金属线与所述第二金属线的线宽不相同。
  19. 如权利要求15所述的OLED阵列基板，其中所述金属线包括：向第一方向延伸的第一金属线和向第二方向延伸的第二金属线；所述第一金属线与所述第二金属线的厚度不相同。
  20. 如权利要求15所述的OLED阵列基板，其中所述空穴注入层设置在所述第二透明阳极层的表面；所述第二透明阳极层的表面为平整的表面。
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