WO2017044201A1 - Substrate support with real time force and film stress control - Google Patents

Substrate support with real time force and film stress control Download PDF

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Publication number
WO2017044201A1
WO2017044201A1 PCT/US2016/044989 US2016044989W WO2017044201A1 WO 2017044201 A1 WO2017044201 A1 WO 2017044201A1 US 2016044989 W US2016044989 W US 2016044989W WO 2017044201 A1 WO2017044201 A1 WO 2017044201A1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor
workpiece
sensor assembly
substrate support
support surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2016/044989
Other languages
English (en)
French (fr)
Inventor
Wendell Glen BOYD, Jr.
Govinda Raj
Matthew James BUSCHE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to JP2018512877A priority Critical patent/JP6878413B2/ja
Priority to KR1020247027406A priority patent/KR20240129089A/ko
Priority to KR1020187010116A priority patent/KR102696914B1/ko
Publication of WO2017044201A1 publication Critical patent/WO2017044201A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
    • G01D11/24—Housings ; Casings for instruments
    • G01D11/245—Housings for sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/266—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/268—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light using optical fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L11/00—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00
    • G01L11/02—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means
    • G01L11/025—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means using a pressure-sensitive optical fibre
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • a workpiece may need to be precisely held by a fixture during manufacturing operations to increase uniform quality and reduce defects.
  • a substrate support may be used as the fixture to hold the workpiece against a supporting structure.
  • An electrostatic force or other force (“clamping force”) often is used to precisely hold the workpiece to a workpiece support surface of the substrate support during one or more manufacturing operations.
  • Figure 1 illustrates one embodiment of the sensor assembly 190.
  • Figure 1 depicts a schematic view of an exemplary plasma processing chamber 100 having a substrate support assembly 170 installed therein.
  • the substrate support assembly 170 has a sensor assembly 190 disposed therein.
  • the plasma processing chamber 100 is a sputter etch processing chamber or a plasma etch system.
  • other types of processing chambers such as physical vapor deposition (i.e. , sputtering) chambers, chemical vapor depositional chambers, or other vacuum processing chambers, may also be used to practice the embodiments disclosed herein.
  • the substrate support assembly 170 includes an electrostatic chuck 122.
  • the substrate support assembly 170 may additionally include a cooling plate 151 , and a support base 152.
  • the support base 152 may include a support housing 149, bellows assembly 1 10 and a support shaft 1 12.
  • the support shaft 1 12 may be coupled to a lift mechanism 1 13 which may provide vertical movement of the substrate support assembly 170 between an upper, processing position, as shown, and a lower workpiece transfer position (not shown).
  • the bellows assembly 1 10 may be disposed about the support shaft 1 12 and may be coupled between the support base 152 and the bottom surface 126 of the processing chamber 100 to provide a flexible seal that allows vertical motion of the substrate support assembly 170 while preventing loss of vacuum from within the processing chamber 100.
  • the sensor assembly 190 is shown mounted in a puck 150 of Figure 1 , advantageously, a similar arrangement for mounting of the sensor assembly 190 may be extended to other products where it is required to measure the deflection of the parts in nanometers or at the microns level.
  • the following discussion of the sensor assembly 190 and the advantages will be discussed with regards to the puck 150 described above.
  • the operating parameters for puck 150 may be advantageously controlled with a feedback loop relying on the data provided by the sensor assembly 190.
  • the measurement of deflection by the sensor assembly 190 can be extended to additionally calculate the vibration and the force exerted on the workpiece 101 for relieving film stress and maintaining a planar surface on the workpiece 101 for reducing variations and defects in the film layers formed on the workpiece 101 during processing.
  • the backside gas enters the tee connection 310 via the opening second 334.
  • the wiring thru-fitting 340 is attached to the third opening 322 to fluidly seal the third opening 322 while allowing communication between the sensor assembly 190 and the control system 194.
  • the tee connection 310 splits the fluid source for the backside gas and the communication to the control system 194 from the backside gas delivery hole 198 of the puck 150.
  • the body 401 of the mounting head 224 has a plurality of holes 464.
  • the holes 464 extend from the top surface 409 to the bottom surface 408.
  • the mounting head 224 has 4 holes 464.
  • the mounting head has 6 or more holes 464.
  • the holes 464 are configured to permit fluid to flow past the body 401 of the mounting head 224 when the sensor assembly 190 is mounted in the backside gas delivery hole 198.
  • the sensor assembly 190 may be installed inside an existing fluid delivery hole in a conventional electrostatic chuck, thus allow a retrofit of an existing electrostatic chuck without the sensor assembly 190 interfering with the flow of fluid through the hole accommodating the sensor assembly 190.
  • the body 401 of the mounting head 224 additionally has one or more pins 474.
  • the pins 474 extend from the top surface 409 past the bottom surface 408.
  • the mounting head 224 has three pins 474 for interfacing with and locating the mounting head 224 in the split plate 222.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
PCT/US2016/044989 2015-09-11 2016-08-01 Substrate support with real time force and film stress control Ceased WO2017044201A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018512877A JP6878413B2 (ja) 2015-09-11 2016-08-01 リアルタイムの力および膜応力制御を備えた基板支持体
KR1020247027406A KR20240129089A (ko) 2015-09-11 2016-08-01 실시간 힘 및 필름 스트레스 제어를 갖는 기판 지지부
KR1020187010116A KR102696914B1 (ko) 2015-09-11 2016-08-01 실시간 힘 및 필름 스트레스 제어를 갖는 기판 지지부

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/852,485 2015-09-11
US14/852,485 US10879046B2 (en) 2015-09-11 2015-09-11 Substrate support with real time force and film stress control

Publications (1)

Publication Number Publication Date
WO2017044201A1 true WO2017044201A1 (en) 2017-03-16

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PCT/US2016/044989 Ceased WO2017044201A1 (en) 2015-09-11 2016-08-01 Substrate support with real time force and film stress control

Country Status (7)

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US (4) US10879046B2 (enExample)
JP (3) JP6878413B2 (enExample)
KR (2) KR20240129089A (enExample)
CN (3) CN107039325B (enExample)
SG (1) SG10202002453XA (enExample)
TW (3) TW202036780A (enExample)
WO (1) WO2017044201A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110491756A (zh) * 2017-05-15 2019-11-22 应用材料公司 具有闭环夹持力控制的实时监测

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102113453B1 (ko) * 2016-06-03 2020-05-21 어플라이드 머티어리얼스, 인코포레이티드 기판 거리 모니터링
JP6457468B2 (ja) * 2016-12-08 2019-01-23 ファナック株式会社 バリ取り装置
DE102017208645A1 (de) * 2017-05-22 2018-11-22 Siemens Aktiengesellschaft Messsondenkopf
US10704142B2 (en) * 2017-07-27 2020-07-07 Applied Materials, Inc. Quick disconnect resistance temperature detector assembly for rotating pedestal
US11114327B2 (en) * 2017-08-29 2021-09-07 Applied Materials, Inc. ESC substrate support with chucking force control
KR20190029365A (ko) * 2017-09-12 2019-03-20 삼성전자주식회사 리프트 핀 조립체, 이를 갖는 기판 지지 유닛 및 기판 처리 장치
SG11202008969PA (en) * 2018-03-23 2020-10-29 Applied Materials Inc Isolated backside helium delivery system
US10971352B2 (en) 2018-07-16 2021-04-06 Taiwan Semiconductor Manufacturing Co., Ltd Cleaning method and apparatus
US10927461B2 (en) * 2018-08-31 2021-02-23 Applied Materials, Inc. Gas diffuser support structure for reduced particle generation
CN109231152B (zh) * 2018-09-30 2020-06-16 重庆大学 利用光纤Fabry-Perot干涉仪测量夹持力和夹爪位移的微夹钳
CN109129410B (zh) * 2018-09-30 2021-07-27 重庆大学 夹爪为光纤Fabry-Perot干涉仪且可夹持力自传感的微夹钳
JP7209515B2 (ja) * 2018-11-27 2023-01-20 東京エレクトロン株式会社 基板保持機構および成膜装置
US12125728B2 (en) * 2019-01-21 2024-10-22 Applied Materials, Inc. Substrate carrier
WO2020232074A1 (en) * 2019-05-14 2020-11-19 Mattson Technology, Inc. Plasma processing apparatus having a focus ring adjustment assembly
US11415463B2 (en) * 2019-06-04 2022-08-16 Applied Materials, Inc. Contactless workpiece temperature sensor
KR20220018591A (ko) * 2019-06-07 2022-02-15 램 리써치 코포레이션 멀티 스테이션 반도체 프로세싱에서 독립적으로 조정 가능한 플로우 경로 컨덕턴스
JP7681587B2 (ja) * 2019-11-22 2025-05-22 ラム リサーチ コーポレーション コインスロットおよびボールロックセラミックリフトピンホルダ
CN215925072U (zh) * 2020-09-24 2022-03-01 株式会社国际电气 基板处理装置
WO2022173720A1 (en) * 2021-02-09 2022-08-18 Fuse Energy Technologies Corp. Adjustable probe for plasma diagnostics
KR20230146074A (ko) * 2021-02-19 2023-10-18 어플라이드 머티어리얼스, 인코포레이티드 기판 지지체, 기판을 프로세싱하는 방법, 및 프로세싱 시스템
US11851761B2 (en) * 2021-04-16 2023-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool
US20230141012A1 (en) * 2021-11-09 2023-05-11 Applied Materials, Inc. Pressure puck diagnostic wafer
CN116476193B (zh) * 2023-03-24 2024-01-05 上海数造机电科技股份有限公司 基于静电吸附的陶瓷3d打印构建平台、方法及系统
CN116552611B (zh) * 2023-05-11 2025-11-25 盛吉盛(宁波)半导体科技有限公司 一种用于支撑与搬运静电卡盘组件的底座工装
US12449738B2 (en) * 2023-06-20 2025-10-21 Applied Materials, Inc. Rotary substrate support for aligning a substrate
WO2025155847A1 (en) * 2024-01-18 2025-07-24 Watlow Electric Manufacturing Company Electrical termination for ceramic pedestal with embedded electrical components

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129421A (ja) * 1991-11-07 1993-05-25 Fujitsu Ltd 静電チヤツク
JPH06163674A (ja) * 1992-11-18 1994-06-10 Hitachi Ltd 試料保持装置のモニタ方法
KR20040000104A (ko) * 2002-06-24 2004-01-03 삼성전자주식회사 웨이퍼 감지 센서의 정렬장치
KR20080048676A (ko) * 2006-11-29 2008-06-03 주식회사 에이디피엔지니어링 리프트 핀을 이용한 기판 유무 판별장치 및 이를 이용한기판 반입방법과 검사방법
JP2011243834A (ja) * 2010-05-20 2011-12-01 Tokyo Electron Ltd プラズマ処理装置，基板保持機構，基板位置ずれ検出方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2616118B2 (ja) * 1990-03-22 1997-06-04 ソニー株式会社 低温処理方法及び低温処理装置
JP3042786B2 (ja) * 1990-07-03 2000-05-22 株式会社日立製作所 真空内被処理物の温度測定方法並びに温度制御方法及び装置
JPH04193951A (ja) * 1990-11-28 1992-07-14 Tokyo Electron Ltd 保持装置
JP3488334B2 (ja) 1996-04-15 2004-01-19 京セラ株式会社 静電チャック
KR19990040901U (ko) 1998-05-11 1999-12-06 김영환 반도체 식각공정용 정전척의 냉각가스홀에퇴적된 폴리머 제거장치
JP2000031252A (ja) * 1998-07-08 2000-01-28 Mitsubishi Electric Corp 静電チャックを備えた半導体製造装置および静電チャックからのウエハ離脱方法
JP2000266603A (ja) * 1999-03-19 2000-09-29 Tokyo Electron Ltd 放射温度測定方法及び放射温度測定装置
JP4236329B2 (ja) * 1999-04-15 2009-03-11 日本碍子株式会社 プラズマ処理装置
WO2001076326A1 (en) * 2000-03-30 2001-10-11 Tokyo Electron Limited Optical monitoring and control system and method for plasma reactors
JP2002009140A (ja) * 2000-06-22 2002-01-11 Mitsubishi Electric Corp 静電チャック装置
US20020186934A1 (en) * 2001-06-07 2002-12-12 Hug Norman L. Optical termination
US6898064B1 (en) * 2001-08-29 2005-05-24 Lsi Logic Corporation System and method for optimizing the electrostatic removal of a workpiece from a chuck
US6938505B2 (en) 2002-08-13 2005-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber wafer detection
US7110122B2 (en) * 2004-07-21 2006-09-19 Hewlett-Packard Development Company, L.P. Interferometer calibration methods and apparatus
US7292428B2 (en) 2005-04-26 2007-11-06 Applied Materials, Inc. Electrostatic chuck with smart lift-pin mechanism for a plasma reactor
WO2007149733A2 (en) * 2006-06-19 2007-12-27 Baker Hughes Incorporated Isolated sensor housing
US7750818B2 (en) * 2006-11-29 2010-07-06 Adp Engineering Co., Ltd. System and method for introducing a substrate into a process chamber
US20090034581A1 (en) * 2007-08-02 2009-02-05 Tokyo Electron Limited Method for hot plate substrate monitoring and control
JP5484981B2 (ja) * 2010-03-25 2014-05-07 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP2011258756A (ja) * 2010-06-09 2011-12-22 Ntn Corp リフタユニットおよびパターン修正装置
WO2012112994A1 (en) * 2011-02-18 2012-08-23 Parker-Hannifin Corporation Optical sensor and mounting interface
US9196514B2 (en) * 2013-09-06 2015-11-24 Applied Materials, Inc. Electrostatic chuck with variable pixilated heating
US9558981B2 (en) 2013-11-19 2017-01-31 Applied Materials, Inc. Control systems employing deflection sensors to control clamping forces applied by electrostatic chucks, and related methods
JP6455334B2 (ja) * 2015-06-23 2019-01-23 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05129421A (ja) * 1991-11-07 1993-05-25 Fujitsu Ltd 静電チヤツク
JPH06163674A (ja) * 1992-11-18 1994-06-10 Hitachi Ltd 試料保持装置のモニタ方法
KR20040000104A (ko) * 2002-06-24 2004-01-03 삼성전자주식회사 웨이퍼 감지 센서의 정렬장치
KR20080048676A (ko) * 2006-11-29 2008-06-03 주식회사 에이디피엔지니어링 리프트 핀을 이용한 기판 유무 판별장치 및 이를 이용한기판 반입방법과 검사방법
JP2011243834A (ja) * 2010-05-20 2011-12-01 Tokyo Electron Ltd プラズマ処理装置，基板保持機構，基板位置ずれ検出方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110491756A (zh) * 2017-05-15 2019-11-22 应用材料公司 具有闭环夹持力控制的实时监测
CN110491756B (zh) * 2017-05-15 2024-03-29 应用材料公司 具有闭环夹持力控制的实时监测

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