CN117976601A - 具有即时力和薄膜应力控制的基板支撑件 - Google Patents
具有即时力和薄膜应力控制的基板支撑件 Download PDFInfo
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- CN117976601A CN117976601A CN202410003143.1A CN202410003143A CN117976601A CN 117976601 A CN117976601 A CN 117976601A CN 202410003143 A CN202410003143 A CN 202410003143A CN 117976601 A CN117976601 A CN 117976601A
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L22/10—Measuring as part of the manufacturing process
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- G01D11/00—Component parts of measuring arrangements not specially adapted for a specific variable
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- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
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- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
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- G01L11/025—Measuring steady or quasi-steady pressure of a fluid or a fluent solid material by means not provided for in group G01L7/00 or G01L9/00 by optical means using a pressure-sensitive optical fibre
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本发明公开的实施方式包括一种具有传感器组件的基板支撑件,以及具有所述基板支撑件的处理腔室。在一个实施方式中,基板支撑件具有定位盘。所述定位盘具有工件支撑表面以及排出所述工件支撑表面的气孔。传感器组件被设置在所述气孔中,且经配置以检测一度量,所述度量指示出设置在所述工件支撑表面上的工件的偏折,其中所述传感器组件经配置以当被定位在所述气孔中时允许气体流过所述传感器组件。
Description
本申请是申请日为2016年9月9日、申请号为201610815239.3、发明名称为“具有即时力和薄膜应力控制的基板支撑件”的发明专利申请的分案申请。
技术领域
本发明的实施方式一般地涉及在用于制造微电子器件的处理腔室中所使用的基板支撑件。
背景技术
在高精准度制造(例如半导体制造)中,在制造操作期间可能需要通过固定装置精确地固持工件,以增加一致的品质并减少缺损。在某些制造操作中可利用基板支撑件作为固定装置,以抵靠支撑结构来固持工件。在一个或多个制造操作期间,静电力或其它力(“夹紧力”)经常被用来精确地固持工件到基板支撑件的工件支撑表面。
在高精准度制造操作中,应该以尽可能最小的夹紧力、对所述工件支撑表面以尽可能最少的接触来固持工件,以减少缺损。然而,由于制造的变动(诸如施加至工件的表面处理会改变夹持力、基板支撑件的支撑表面的磨损及污染)以及由于其它环境影响,制造人员经常发现自己增加了目标夹紧力,以提供安全因子来确保施加了足够的夹紧力以应对前述的变动和所述这些变动对夹持力的影响。
半导体制造工业中使用的绝大部分基板支撑件经常施加大于所需的夹紧力,也就是过度夹持。过度夹持对工件造成损坏,例如:造成工件背侧中有坑洞、将基板支撑件的零件嵌入至工件中、增加工件中的薄膜应力、和/或造成在工件的处理侧上产生品质问题的微粒子。此外,在工件的不同区域中的不平衡夹持力,连同工件的变动,造成产量不一致的相关问题。
减少过度夹持问题的常规方法已包括在施加夹紧力之前测量工件的电位,这可能影响夹紧力。常规方法接着在演算法中运用测得的电位来补偿在夹紧期间所述工件的电位,以确定和施加最小夹紧力。然而,就算利用常规方法的方式,工件仍可经常被过度夹持并且因此仍被损坏。随着制造容错度变得越来越严格而降低成本的需求变得更重要,需要新的方法来提供更一致且可预测的夹紧力,以容许更大范围的制造变动。
因此,需要一种改良的基板支撑件。
发明内容
本发明公开的实施方式包括一种具有传感器组件的基板支撑件,以及具有所述基板支撑件的处理腔室。在一个实施方式中,一基板支撑件具有定位盘(puck)。所述定位盘具有工件支撑表面和排出所述工件支撑表面的气孔。传感器组件设置在所述气孔中,且经配置以检测一度量,所述度量指示出设置在所述工件支撑表面上的工件的偏折(deflection),其中所述传感器组件经配置以当被定位在所述气孔中时允许气体流过所述传感器组件。
在另一个实施方式中,处理腔室具有内部腔室容积。基板支撑件设置在所述内部腔室容积中。所述基板支撑件具有定位盘。所述定位盘具有工件支撑表面和排出所述工件支撑表面的气孔。传感器组件设置在所述气孔中且经配置以检测一度量,所述度量指示出设置在所述工件支撑表面上的工件的偏折,其中所述传感器组件经配置以当被定位在所述气孔中时允许气体流过所述传感器组件。
在又一个另一实施方式中,基板支撑件具有定位盘。所述定位盘具有工件支撑表面和设置在所述定位盘中的升降销。传感器组件设置在所述升降销中且经配置以检测一度量,所述度量指示出设置在所述工件支撑表面上的工件的偏折。
在以下的详细描述中将阐述额外的特征以及优点,并且其中一部分对于本领域技术人员来说从这些说明将是显而易见的,或者通过施行本发明中所描述的实施方式将得以被理解,包括以下的详细描述、权利要求以及附图。
应当理解的是,以上概略的描述以及以下的详细的描述都仅为例示性的,且旨在提供用以理解权利要求的性质和特征的概观或框架。附图被包括以提供进一步理解,并且附图被并入且构成本说明书的一部分。这些附图示出一个或多个实施方式,并连同说明书用以解释各种实施方式的原理及操作。
附图说明
因此,以上简要总结的本发明的实施方式的上述特征可被详细理解的方式、对本公开内容更加特定的描述可以通过参考实施方式获得,所述实施方式中的一些示出于附图之中。然而,应当注意的是,所述附图仅示出了本发明的典型的实施方式,而由于本公开内容可允许其它等效的实施方式,所述附图因此并不会被视为对本公开内容范围的限制。
图1是示例性等离子体处理腔室的示意性侧面图,所述等离子体处理腔室内安装有基板支撑件。
图2是基板支撑件的部分截面等距图,所述基板支撑件具有传感器组件安装在背侧气体贯通孔中。
图3是描绘在背侧气体贯通孔中的传感器组件和控制系统间的垂直连接的截面等距图。
图4A是传感器外壳的裂口垫板(split plate)的等距图。
图4B是裂口垫板的平面图。
图5是传感器外壳的安装头的截面透视图。
图6是基板支撑件的部分截面图,所述基板支撑件上设置有工件。
图7A~7D是基板支撑件的俯视图,图示出了所述传感器组件的不同位置。
图8是基板支撑件的部分截面透视图,所述基板支撑件具有传感器组件安装在升降销中。
具体实施方式
现将详细参照实施方式,实施方式的范例示出在附图中,其中的部分实施方式被示出,而并非全部。确实,本发明的概念可体现为许多不同的形式而不应被解释为限制于此;相反的,提供这些实施方式是为了让本说明书符合适用的法律需求。只要可能,相同的参考数字将被用来指示相同的部件或零件。
本发明公开的实施方式包括传感器组件,所述传感器组件包括传感器外壳和偏折传感器中的一个或多个。传感器组件经配置以被设置在基板支撑组件内,基板支撑组件诸如是静电卡盘、座、真空卡盘、加热器、或其它适用的组件以供在处理腔室处理的同时固持工件。例如,传感器组件可被设置在基板支撑组件的现有的背侧气体输送孔中。偏折传感器可提供设置在基板支撑组件上的工件(诸如半导体晶片或基板)的偏折的即时测量结果,所述工件因被施加的夹紧或其它力而造成缺损。通过利用偏折传感器来确定基板支撑组件上的工件的偏折,控制系统可利用所测得的工件的偏折来确定施加至工件的力。控制系统运用来自偏折传感器的信息来修改施加至工件的夹紧力,并维持目标夹紧力。以这种方式,夹紧力可将工件固定至基板支撑组件,并避免在制造操作期间由于过度的夹紧力所致的不必要的工件过度偏折而生的基板损坏。
图1图示了传感器组件190的一个实施方式。涂1描绘了示例性等离子体处理腔室100的示意图,等离子体处理腔室100中安装有基板支撑组件170。基板支撑组件170中设置有传感器组件190。在一个实施方式中,等离子体处理腔室100是溅射蚀刻处理腔室或等离子体蚀刻系统。然而,也可使用其它类型的处理腔室,诸如物理气相沉积(即溅射)腔室、化学气相沉积腔室、或其它真空处理腔室,来实施本发明公开的实施方式。
处理腔室100是真空腔室,所述真空腔室可经适当地调适以在工件101(诸如例如硅晶片的基板)处理期间维持腔室内容积120内的低大气压力(sub-atmosphericpressure)。处理腔室100包括腔室主体106,所述腔室主体具有底表面126并由一盖子104所覆盖,所述盖子封闭腔室内容积120。腔室主体106和盖子104可由金属制成,诸如铝或其它适当材质。
处理腔室100被耦接至且流体连通于真空系统114,所述真空系统包括用来抽气和排空处理腔室100的节流阀(未示出)和真空泵(未示出)。处理腔室100内部的压力可通过调整节流阀和/或真空泵来调节。处理腔室100还被耦接至且流体连通于处理气源118,所述处理气源可供应一种或多种处理气体至处理腔室100,诸如氩气、氧气、氯气、或其它适合用于处理工件101的气体。
RF等离子体电源117可将这些处理气体通电来维持等离子体102,以供处理工件101。可选地,基板支撑组件170可将工件101偏压以从往此处的等离子体102吸引离子。处理气体(诸如氯)从气源118被导入至处理腔室100中,且气体压力被调整至预设值以供等离子体点燃。当被传递RF电力时,等离子体102在腔室内容积120中透过电容耦合被点燃。可调整或预设RF匹配(未示出)以改善从RF等离子体电源117到等离子体102的电力传输效率。
在腔室内容积120内设置有基板支撑组件170。基板支撑组件170具有工件支撑表面172,在处理期间工件101安放于工件支撑表面上。基板支撑组件170可包括真空卡盘、静电卡盘、承受器、加热器、或其它适合用于处理期间在处理腔室100内支撑工件101的基板支撑件。
在一个实施方式中,基板支撑组件170包括静电卡盘122。基板支撑组件170可额外地包括冷却板151,以及支撑座152。支撑座152可包括支撑件外壳149、伸缩管组件110以及支撑杆112。支撑杆112可被耦接至升降机构113,所述升降机构可提供基板支撑组件170在较高的处理位置(如图示)和较低的工件传递位置(未示出)之间的垂直移动。伸缩管组件110可围绕支撑杆112而设置,且伸缩管组件110可被耦接在支撑座152和处理腔室100的底表面126之间,以提供允许基板支撑组件170的垂直运动的可挠的(flexible)密封,同时避免失去在处理腔室100内的真空。
设置在基板支撑组件170上的工件101的温度调节可通过设置在冷却板151中的多个冷却通道160来促成。冷却通道160被耦接至且流体连通于流体源142,所述流体源提供冷却剂流体(诸如水),不过可使用任何适当的冷却剂流体(气体或液体)。
基板支撑组件170可包括基板升降器130,以用于在通过机械臂(未示出)将工件101传递进出处理腔室100的期间支撑在工件支撑表面172上方间隔开(spaced)的工件101。基板升降器130可包括升降销109,所述升降销与连接至杆111的平台108对齐。在一个实施方式中,升降销109具有细长中空主体,如图8中所示。基板支撑组件170可包括贯通孔(未示出),所述贯通孔用以在升降销109于被升起位置时(例如当支撑工件101时)接收从中通过的升降销109。基板升降器130被耦接至第二升降机构132,所述第二升降机构用于延长穿过这些贯通孔的升降销109以在工件支撑表面172上方的位置中支撑工件101,来促进工件101的自动传递。基板升降器130额外地降低升降销109到工件支撑表面172下方,以将工件101放在工件支撑表面172上。
静电卡盘122包括定位盘150。定位盘150可包括加热元件。可利用一个或多个温度传感器(未示出)来监测定位盘150、冷却板151、和/或静电卡盘122的其它组件的温度,诸如热电耦和类似物,所述一个或多个温度传感器耦接至一个或多个温度监测器。在一个范例中,定位盘150耦接至用于温度监测的至少一个热电耦。
定位盘150支撑并夹持(也就是施加夹紧力(Fc)至)工件101。定位盘150可包括电绝缘定位盘基座162,所述电绝缘定位盘基座中嵌入有电极134以供产生夹紧力(Fc)。电极134被电连接至夹持电源140,诸如DC电源。电极134供应用于夹持工件101至定位盘150的工件支撑表面172的夹紧力(Fc)。电极134可由任何适当的导电材质制成,诸如金属或金属合金。向电极134的供电可通过耦接至夹持电源140的控制系统194来控制。在一个范例中,定位盘150包括用于夹持工件101的一个电极134。电极134可为设置在定位盘基座162内的薄盘或线。在另一个范例中,定位盘150包括用于夹持工件101的两个或更多个电极134。电极134可各为可彼此独立操作的薄的半圆形或“D”字形板。然而,一个或多个电极134可具有任何适当的形状,可包括环形、楔形、条状等等。
凸部168和凹部164被设置在定位盘基座162的工件支撑表面172上。工件支撑表面172可额外地含有凹槽和通道中的一种或多种或其它几何形状。工件101可被支撑在凸部168上并被升高在凹部164上方。凹部164可流体连通于气源141,以在这些凸部168之间提供流体(诸如背侧气体)。通过形成在定位盘150中的一个或多个背侧气体输送孔198可从气源141传递背侧气体至凹部164。背侧气体可在工件101和定位盘150之间流通,以协助调节定位盘150和工件101之间的热传递速率。在一个范例中,背侧气体可包含惰性气体(诸如氩气)。
传感器组件190可被设置在形成于定位盘150中的贯通孔中,诸如背侧气体输送孔198。或者,如图8中所示,具有细长主体832的升降销809可具有传感器组件896,所述传感器组件被设置在细长主体832的中空部820中。升降销809具有头部834,其中所述头部经配置以接触并支撑所述升降销上的基板。传感器组件896被设置在靠近升降销809的头部834处。中空部820可延伸细长主体832的长度。或者,中空部820可从头部834沿着所述细长主体延伸足够距离以在中空部820中支撑传感器组件190,无须传感器组件190从头部834突出并接触设置在头部834上的基板。传感器组件896大致类似于传感器组件190,且传感器组件896包括传感器280并且可额外地包括传感器组件190的其它组件中一个或多个。在又一个另一实施方式中,传感器组件190可被安装在凹部164中或其它适当位置。传感器组件190可为多孔的并允许流体(诸如背侧气体)从中穿越。例如,传感器组件190可具有允许流体穿过传感器组件190的通路。
传感器组件190可与控制系统194连通。传感器组件190测量工件支撑表面172上的工件101的偏折。控制器192根据由传感器组件190测得的偏折来确定施加至工件101的夹紧力Fc。以这种做法,控制器192可通过调整夹持电源140所提供给电极134的夹持电压Vc调整夹紧力Fc,以维持所期望的夹紧力Fc。通过透过即时监测真正的夹紧力(经由传感器组件190)和即时调整提供给电极134的电力维持所期望的夹紧力Fc,相较于常规的夹持技术,来自静电卡盘122的至工件101的损坏能被降低。
尽管传感器组件190被图示为安装在图1的定位盘150中,有利地,用于安装传感器组件190的一种类似配置方式可延伸到需要以纳米或微米层级来测量零件偏折的其它产品。然而,以下有关传感器组件190的讨论和优点将针对如上所述的定位盘150来讨论。例如,定位盘150的操作参数可较佳地通过根据传感器组件190所提供数据的反馈回路来控制。由传感器组件190所做的偏折测量能被延伸以额外地计算工件101的震动和被施加的力,以用于缓解薄膜应力和维持工件101上的平坦表面,以减少处理期间在工件101上所形成薄膜层的变异和缺损。
图2是图1中所示静电卡盘122的部分截面图,所述静电卡盘具有传感器组件190被安装在背侧气体输送孔198中。垂直线298被提供为垂直于工件支撑表面172。垂直线298仅为示例性的而不一定位于背侧气体输送孔198中或定位盘150的其它孔洞中。所述传感器组件安装所在的孔洞的形状不限于圆形孔洞。所述孔洞可以为雷射钻孔、机械加工、或其它方式所形成的孔。
背侧气体通道218可包括背侧气体输送孔198和过渡管道210,所述过渡管道连接至所述背侧气体通道以提供背侧气体至定位盘150的工件支撑表面172。在被设置在背侧气体输送孔198中的传感器组件190是固定连接至控制系统194的实施方式中,传感器组件190和控制系统194之间的通讯连接284可至少部分地穿越通过背侧气体通道218。在传感器组件896被设置在升降销809的中空部820中并且固定连接至控制系统194的实施方式中(如图8中所示),传感器组件896和控制系统194之间的通讯连接884可至少部分地穿越通过静电卡盘122的升降销孔。
简单参照图3,图3是描绘背侧气体输送孔198中的一在传感器组件190与控制器192之间的垂直连接300的截面图。过渡管道210可与T形连接310(tee connection)耦接。或者,在过渡管道210和T形连接310之间可耦接有一定数量的管道或其它适用手段,以维持背侧气体通道218。尽管所述T形连接被图示为在水平通路320上有一个开口322(第三开口)并在垂直通路330上有二个开口332、334(分别为第一和第二开口),可预期T形连接310可被旋转90度左右以使在水平上有第二开口而在垂直上仅有一个开口。在其它实施方式中,T形连接310可经被另一适当的气体连接器替代。例如,T形连接310可具有多个开口,诸如四个。T形连接310可具有流体耦接至过渡管道210的第一开口。第二和第三开口可被流体耦接至流体源。最后,第四(也是最后)开口可被耦接至控制系统194。
图3的实施方式中,T形连接310的第一开口332耦接至过渡管道210。然而,如上所讨论,可设想出用于将传感器组件190连接至控制系统194同时允许通过传感器组件190的气体传递的其它配置方式。在一个实施方式中,第二开口334可被耦接至连接器336。连接器336经调适以接口连接(interface with)于配线直通管件340。配线直通管件340具有通道342,所述通道经配置以接口连接于通讯连接284。配线直通管件340密封连接器336以免于流体流失,同时允许通讯连接284通过其间传送通讯信号。在一个实施方式中,通道342是以垫片材料形成,所述材料提供配线直通管件340和通讯连接284之间的密封。在另一个实施方式中,通道342可为通讯连接284可插入的连接器(诸如针销连接器)。
背侧气体经由第三开口322进入T形连接310。气源141流体耦接至第一开口332。背侧气体通过开口322进入T形连接310,并经由第一开口332离开T形连接310,第一开口332连接至静电卡盘122上的背侧气体输送孔198。
在另一个实施方式中,背侧气体经由第二开口334进入T形连接310。配线直通管件340被附接至第三开口322以流体密封第三开口322同时允许传感器组件190和控制系统194之间的通讯。在又一个实施方式中,T形连接310从定位盘150的背侧气体输送孔198分流针对背侧气体的流体源和到控制系统194的通讯。
回到图2,传感器组件190包括传感器280和传感器外壳220。传感器280可为基于光纤的传感器(诸如法布里培洛传感器(Fabry-Pérot sensor,FPS)),或是干涉仪,或是其它适合用于测量小偏折的传感器。在一个实施方式中,传感器280是FPS。传感器280与控制系统194通讯。在一个实施方式中,传感器280可具有通讯连接284固定连接至控制系统194中的控制器192。在另一个实施方式中,传感器组件190可无线地与控制系统194通讯。传感器280可测量一度量,所述度量指示出离设置在定位盘150上的工件(未示出)的距离,并即时提供所述度量至控制系统194以供控制系统194或其它适当器件的分析。
传感器280可具有传感器头282。传感器头282可发射和接收用于做距离测量的信号。传感器280可精准地安装在定位盘150中,使得传感器头282和任何物体(诸如工件(未示出))之间的距离能即时被测量以确定具纳米准确度的相对位移。传感器280可被准确地安装在背侧气体通道218的过渡管道210内。传感器外壳220保持传感器280在背侧气体通道218中。传感器头282可对准垂直线298而误差在+/-3度之内,换言之所述传感器头经对准垂直于工件支撑表面而误差在+/-3度之内。传感器头282的距离能通过调整传感器外壳220在定位盘150内的位置,从距离凸部168的顶端大约小于5mm调整到距离凸部168的顶端大约小于300mm。
传感器280可包括用以发射放射线的放射线发射器和用以测量由工件101所反射的放射线部分的放射线检测器。放射线(或信号)可能是例如所具有波长在大约600纳米到大约1700纳米之间的电磁放射线。传感器280中的放射线检测器测量所发射的放射线信号的返回路径。因此,传感器280的角度和位置可影响测量。传感器外壳220将传感器280维持在精确位置和方位以促进准确的测量。
传感器外壳220可包括裂口垫板224和安装头222。额外参照图4A、4B、和5图来讨论裂口垫板224和安装头222。图4A是用于传感器组件190的裂口垫板224的透视图。利用锥形安装头222与六边裂口垫板224的组合可实现传感器280的自身对齐。图4B是裂口垫板224的平面图。图5是传感器组件190的安装头222的截面图。
安装头222和裂口垫板224可都是由适合用于低温操作的聚合物所形成。或者,安装头222和裂口垫板224可由高温或低温应用都适合的陶瓷或金属材料形成。安装头222和裂口垫板224可由金属制成,诸如不锈钢(SST)、钛、铝、钨、镍或其它合金。或者,安装头222和裂口垫板224可由陶瓷材料(诸如氧化铝或氮化铝)或石英制成。安装头222和裂口垫板224也能以金属或陶瓷材料来3D打印成。
传感器外壳220经配置以允许气体流通穿过传感器组件190。传感器外壳220可为多孔的。安装头222和裂口垫板224可都是多孔的且可额外地或替代地具有多个孔洞或插槽,以允许背侧气体从中流过。例如图5中所示,安装头222具有孔洞526、564以允许气体穿过传感器组件190。此外,如图4A和4B中所示,裂口垫板224具有多个孔洞464。裂口垫板224中的孔洞464对齐安装头222中的孔洞564,以促进流体流动穿过传感器组件190。孔洞526、564可延伸通过安装头222。安装头222和裂口垫板224可经精确加工而具有孔洞526、564、464。例如,安装头222和裂口垫板224可沿周围具有4个或更多孔洞526、564、464,以允许背侧气体流动穿过传感器组件190。或者,多个孔洞526可在增加的制造工艺(诸如3D打印)中经形成在安装头222和裂口垫板224中。孔洞526、564、464的个数范围可从大约1到大约100或更多,以调整从其中流通的流体的传导性。或者,传感器外壳220可由多孔材料(诸如多孔陶瓷)形成,以在传感器280被安装在背侧气体输送孔198或其它贯通孔中时进一步改善背侧气体流。
简单返回图4A和4B,裂口垫板224具有主体401。主体401可为环形。主体401可选性地具有侧开口430。主体401具有中心开口450。在一个实施方式中,主体401是六边环形,所述六边环形缺少一面六边形以形成侧开口430。在另一个实施方式中,主体401可具有圆环形而所述主体401缺了一扇形以有效形成侧开口430。
中心开口450可具有内周402。中心开口450可具有内凸耳420,所述内凸耳从内周402延伸到中心开口450中。内凸耳420可具有内周432。中心开口450的内周402经调整大小以允许传感器280从中通过。内凸耳420的内周432小于中心开口450的内周402。内凸耳420的内周432也小于传感器280的宽度,使得传感器280可由内凸耳420所支撑。在这种方式中,裂口垫板224中的传感器280的位置可经配置以精确地将传感器280排列在背侧气体输送孔198内。
裂口垫板224的主体401具有多个孔洞464。孔洞464从顶表面409延伸至底表面408。在一个实施方式中,裂口垫板224有4个孔洞464。在另一个实施方式中,所述裂口垫板有6个以上的孔洞464。孔洞464经配置以当传感器组件190被安装在背侧气体输送孔198中时允许流体流过裂口垫板224的主体401。有利地,传感器组件190可被安装在常规静电卡盘中现有的流体传递孔中,因此允许改造现有的静电卡盘而不需传感器组件190干扰穿过容纳传感器组件190的孔洞的流体流动。
裂口垫板224的主体401额外地具有一个或多个针销474。针销474从顶表面409延伸穿过底表面408。在一个实施方式中,裂口垫板224有三个针销474以用于接口连接于安装头222并将裂口垫板224定位于安装头222中。
简单返回图5,安装头222有多个接收孔574。安装头222中的接收孔574接受来自裂口垫板224的针销474。因此,裂口垫板224可以以预先确定方式对齐安装头222。
安装头222具有主体501。主体501可具有底表面507和顶表面508。主体501可为环形并具有内部开口575,所述内部开口从底表面507延伸至顶表面508。多个鳍片(fin)570可在顶表面508上方延伸。鳍片570提供了裂口垫板224和安装头222之间的接头的稳定性。此外,鳍片570可辅助对齐裂口垫板224中的针销474于安装头222中的接收孔574。
主体501可具有延伸通过主体501的多个通路560(即孔洞526、564)。通路560可对齐裂口垫板224中的孔洞464。因此,通路560和孔洞464的组合提供用于流体的连续管道以跨越传感器外壳220流动并因此通过传感器组件190。在一个范例中,流体于安装头222的底部507进入内部开口575。所述流体通过安装头222朝顶表面508往上移动。流体进入形成在安装头222中的通路560并被导向至裂口垫板224的孔洞464中并穿过裂口垫板224的孔洞464。所述流体于裂口垫板224的顶表面409处离开孔洞464,并继续沿背侧气体输送孔198往上到定位盘150的工件支撑表面172。因此,通路560和孔洞464的组合一起允许流体穿过传感器组件190。
安装头222的主体501经配置以在不干扰流通过背侧气体通道218的流体的情抗下接口连接于背侧气体通道218中的过渡管道210。主体501于底表面507处具有内直径544。内直径544朝顶表面508往上延伸。内直径544于角度532处转变成倾斜内部表面530。倾斜内部表面530可从内直径544于角度532处朝外往顶表面508延伸。角度532和倾斜内部表面530可经配置以影响流体流动的属性,诸如流体传导性、压力或速率。
主体501可额外地在外表面577上具有倒角(chamfer)550。倒角550可为有角度的以在安装头222和过渡管道210之间形成压入配合(press fit)。倒角550可为从顶表面508开始的规定距离552。距离552可被设为任何大小以适应需求。例如,通过将主体501形成为在倒角550和顶表面508之间有更长或更短的距离552,可调整距离552的大小。或者,主体501可被形成为两段,第一段包含顶表面508而第二段包含倒角550。这些段可用诸如将所述螺栓在一起、使用踏阶和平台的组合(a combination steps and landings)的方式来接合在一起,或是使用允许修改距离552的另一适当方式接合在一起。有利地,传感器头282(如图2中所示)能被精确地从距离工件支撑表面172的顶端大约小于5mm到大约30mm朝上朝向或朝下远离工件支撑表面172调整。通过利用有不同厚度的安装头222或改变倒角550到顶表面508的距离552,可修改传感器头282到工件支撑表面172的距离的调整。
图6是具有工件101设置于其上的静电卡盘122的部分截面图。图6示出了接近背侧气体输送孔198的静电卡盘122的定位盘150和凸部168。凸部168被设置在一个或个多凹部164交叉处之间。凸部168可包含正方形或矩形方块、锥形、楔形、金字塔形、柱形、圆柱丘形、或其它具有不同大小的突出形状,或是以上的组合,从用于支撑工件101的定位盘150往上突出。如上所讨论的,可用夹紧力Fc固定工件101至静电卡盘122。
相邻的凸部168的中心可相隔距离660。在一个实施方式中,距离660可在从大约0.3英寸到大约0.5英寸的范围中。相邻的凸部168个自的高度可从大约五十(50)微米到大约七百(700)微米。相邻的凸部168个自的宽度可在从大约五百(500)微米到大约五千(5000)微米的范围中。凹部164可具有的宽度从大约二(2)毫米到大约十(10)毫米。凸部168和凹部164允许静电卡盘122支撑工件101,同时额外地提供工件101的温度管理。
凸部168具有支撑工件101的顶表面642。顶表面642概略界定基准面620,当来自静电卡盘122的夹紧力Fc未被施加时,工件101置于所述基准面上。在一个实施方式中,基准面620是地点。基准面620可作为参考点,从所述参考点可通过传感器280测量工件101的偏折。
一旦施加了夹紧力Fc,工件101可被固定至静电卡盘122。夹紧力Fc将工件101拉向凸部168并连同与凸部168的接触避免了工件101相对于静电卡盘122的移动。在静电卡盘122的整个工件支撑表面172上,夹紧力Fc不为相同的或甚至大致类似的。夹紧力Fc的可变程度可归因于因材料沉积所致的定位盘150中变动、因清洁和蚀刻所致的侵蚀、以及磨损(仅列举其中数种原因)。此外,可遍及工件支撑表面172来刻意区别夹紧力Fc,诸如以分区化静电卡盘配置方式。
传感器280测量工件101相对于基准面620的偏折。为了控制夹紧力FC,夹紧电压被施加至所述静电卡盘中的电极134。可响应于传感器280所测得的工件101的偏折来改变所述夹紧电压。一旦施加了夹紧力FC,即可将工件101对齐凹部164中的几何平面610。描绘可接受偏折的范围可与所测得的偏折比较,并且可调整所述夹紧电压直到所测得的偏折落在预定范围内为止。例如,可接受的偏折的预定范围可在三十(30)微米和大约七十(70)微米之间。当所测得偏折大于大约70微米时,可减少是夹紧电压直到所述传感器即时确定偏折在三十(30)微米和大约七十(70)微米之间为止。可以以放置于两个或更多个位置处的传感器组件190来测量偏折,因此能精确地调校夹紧电压。
传感器280可测量跨越短时间间隔的工件101偏折的改变。控制系统194可以利用来自传感器280的即时偏折测量结果,来检测工件101中的震动。控制系统194可将来自传感器280的偏折数据与所述夹紧电压在相同时间区间上的任何改变作比较。对于恒定的夹紧电压,在可接受范围以外的偏折测量结果的变化可能代表工件101的移动(或震动)。在控制系统194确定了基板正在移动之下,控制系统194可调整所述夹紧电压并经由传感器280监测偏折的改变。在有多个传感器280监测工件101的偏折、且静电卡盘122配备有多个夹紧区域的实施方式中,控制系统194可利用来自位于不同夹紧区域中的个别传感器280的数据,来控制所述特定夹紧区域的夹紧。有利地,控制系统194能最小化工件101中的薄膜应力。
静电卡盘122可配备有多个夹紧区域并使用具有传感器280的多个传感器组件190来监测各夹紧区域。图7A~7D是针对基板支撑件(诸如静电卡盘122)的俯视图,示出了传感器组件190的各种位置。传感器组件190可被定位在静电卡盘122中提供的现有孔洞中。例如,传感器组件190可被定位在背侧气体输送孔198中。传感器组件190可额外地经调适以定位在升降销109的中空部中。或者,在制造静电卡盘122期间或其后可在静电卡盘122中形成孔洞,这些孔洞经配置以具有传感器组件190位于其中。可基于静电卡盘122的定位盘150的现有配置方式来确定传感器组件190的位置。
图7A示出了一个实施方式,其中传感器组件190被置中地定位在定位盘150的工件支撑表面172上,定位盘150具有背侧气体输送孔198和升降销孔709。传感器组件190可定位在所述静电卡盘的中心的背侧气体输送孔198中。或者,可运用置中定位在静电卡盘122中的另一个合适的孔洞来定位传感器组件190。有利地,针对传感器组件190的此种排列方式提供数据以用于避免过度夹持以及用于工件101上的震动检测。可运用所述数据来减少薄膜应力以及最小化工件101中的缺损。此外,将传感器组件190定位在定位盘150中已形成的现有孔洞成本低廉且允许改造现有的静电卡盘。
图7B示出了第二实施方式,其中两个或更多个传感器组件791沿着定位盘150的工件支撑表面172远端定位,定位盘150具有背侧气体输送孔198和升降销孔709。三个传感器组件791定位在升降销孔709中。传感器组件791可在所述升降销(图1中的部件109)中。或者,传感器组件791可围绕所述升降销。在又一个另一选择中,可在定位盘150中形成适当孔洞以在其中放置所述传感器组件。在一些实施方式中,两个或更多个传感器组件791可额外地包括图1中所示的中心传感器组件190。有利地,三个定位于远端的传感器组件791的此种排列方式提供跨越所述工件的偏折数据,以在作用于工件101的夹紧力上得到更大的控制。此外,此种将传感器组件791定位于远端的排列方式可被提供在静电卡盘122的未经修改的定位盘150上,因此允许改造静电卡盘122而仅有小额实施成本。
图7C示出了第三实施方式,其中多个传感器组件711、712、713、714沿着定位盘150的工件支撑表面172远端定位,定位盘150具有背侧气体输送孔198和升降销孔709。四个传感器组件711、712、713、714被定位在适当孔洞中。所述适当孔洞可为背侧气孔、升降销孔,或形成在定位盘150中的其它孔洞。传感器组件711、712、713、714可检测夹持力的变化或所述工件跨越定位盘150的四个象限的震动。在一些实施方式中,多个传感器组件711、712、713、714可额外地包括图1中示出的的中心传感器组件190。有利地,传感器组件711、712、713、714的此种排列方式在工件101的四个象限上提供测量,以得到对于作用在工件101的夹紧力的精确控制。因此,可即时监测和调整各象限的夹紧力Fc,而允许避免过度夹紧以及简单检测工件101中的震动。
图7D示出了第四实施方式,其中多个传感器组件721~728、190遍及定位盘150的工件支撑表面172定位,所述定位盘具有背侧气体输送孔198和升降销孔709。传感器组件721~728、190可对应于夹持电极的排列方式而被放置在定位盘150的同心列和/或区域中。例如,静电卡盘122可具有多个同心排列的独立夹持电极。传感器组件721~728可被排列成内环组730和外环组740。传感器组件721~728可检测夹持力的小变化或是所述工件沿着定位盘150中的夹持电极的震动。在一些实施方式中,多个传感器组件721~728可额外地包括图7A中所示的中心传感器组件190和/或图7B中所示的传感器组件790~793。有利地,传感器组件721~728的此种排列方式在整个工件101上提供离散的偏折测量,以获得免于过度夹持的加强保护。
有利地,本发明所述的传感器组件协助避免了放置在静电卡盘上的工件的过度夹持。避免过度夹持也协助减少了制造期间的薄膜应力。一个或多个传感器组件的此种排列方式可被用以避免不同区域中的不均衡的夹持力,并允许解决工件震动。上述实施方式针对测量静电卡盘上的工件的过度夹持提供一种简单且节约成本的解决方案。在无需修改下使用静电卡盘允许现有的处理设备以节约成本的方式被改造而具有一个或多个传感器组件,同时提供更一致且可预期的夹紧力,容许更大范围的卡盘制造变异性。
本领域技术人员将想到在此未阐述的许多修改和其它实施方式,这些相关实施方式具有前述实施方式中以及附图中展示的教导的益处。因此,应当理解的是,说明书和权利要求不被限制于所公开的特定实施方式,而那些修改的和其它实施方式被包括在所附的权利要求的的范围之内。只要这些修改和改变落在所附权利要求及其等同形式的范围之内,则意味着这些修改和改变属于本发明尽管本发明中采用特定用语,这些用语仅以通用和描述性意义使用而不为用作限制的目的。
尽管以上针对本发明实施方式,但可在不脱离本发明的的基本范围和由以下权利要求所确定的范围下,设计本发明的其它以及进一步的实施方式。
Claims (32)
1.一种传感器组件,所述传感器组件包含:
传感器,所述传感器经配置以检测度量,所述度量指示出设置在所述传感器上方的工件的偏折;和
多孔传感器外壳,所述传感器设置在所述多孔传感器外壳中,所述多孔传感器外壳包含:
裂口垫板,所述裂口垫板具有中心开口,所述中心开口具有内周,所述裂口垫板设置在所述传感器周围;和
安装头,所述安装头被设置在所述裂口垫板下方。
2.如权利要求1所述的传感器组件,其中所述安装头是锥形的并且所述裂口垫板是六边形的。
3.如权利要求2所述的传感器组件,其中安装头包含:
一个或多个孔洞,所述一个或多个孔洞经配置以允许气体在所述传感器周围流动。
4.如权利要求3所述的传感器组件,其中裂口垫板包含:
一个或多个孔洞,所述一个或多个孔洞经配置以允许气体在所述传感器周围流动。
5.如权利要求4所述的传感器组件,其中在所述裂口垫板中的所述孔洞与在所述安装头中的所述孔洞对齐,以促进流体流动穿过所述传感器组件。
6.如权利要求5所述的传感器组件,其中所述传感器外壳由多孔陶瓷材料形成。
7.如权利要求4所述的传感器组件,其中所述裂口垫板包含:
接口连接于所述安装头的针销,并且所述针销将所述裂口垫板以一方位定位在所述安装头中,所述方位将在所述安装头中的孔洞对准在所述裂口垫板中的孔洞。
8.如权利要求2所述的传感器组件,其中所述安装头和所述裂口垫板由以下项目中的至少一者制成:不锈钢(SST)、钛、铝、钨、镍或金属合金。
9.如权利要求2所述的传感器组件,其中所述安装头和所述裂口垫板由聚合物形成。
10.如权利要求1所述的传感器组件,其中所述传感器进一步包含:
基于光纤的距离测量传感器。
11.如权利要求10所述的传感器组件,其中所述基于光纤的距离测量传感器是法布里培洛(Fabry-Pérot)传感器。
12.一种处理腔室,所述处理腔室包含:
腔室主体,所述腔室主体包围腔室内容积;以及
基板支撑件,所述基板支撑件被设置在所述腔室内容积中,所述基板支撑件包含:
定位盘,所述定位盘包含:
工件支撑表面;以及
气孔,所述气孔被形成为通过所述工件支撑表面;以及
被设置在所述气孔中的传感器组件;
过渡管道,所述过渡管道流体耦接至所述气孔;
连接,所述连接耦接到所述过渡管道,其中所述连接包含:
第一开口,所述第一开口流体耦接至所述过渡管道;和
第二开口,所述第二开口耦接至控制系统,其中所述控制系统耦接至所述传感器组件。
13.如权利要求12所述的处理腔室,其中所述传感器组件包含:
传感器,所述传感器经配置以检测度量,所述度量指示出设置在所述传感器上方的工件的偏折;
多孔传感器外壳,所述传感器设置在所述多孔传感器外壳中,所述多孔传感器外壳包含:
裂口垫板,所述裂口垫板具有中心开口,所述中心开口具有内周,所述裂口垫板设置在所述传感器周围;和
安装头,所述安装头被设置在所述裂口垫板下方。
14.如权利要求13所述的处理腔室,其中所述气孔通过所述连接而流体耦接至流体源。
15.如权利要求14所述的处理腔室,进一步包含:
第三开口和第四开口,所述第三开口和第四开口流体耦接至所述流体源。
16.如权利要求14所述的处理腔室,其中所述第二开口耦接至连接器,所述连接器经调适以接口连接于配线直通管件。
17.如权利要求16所述的处理腔室,其中所述配线直通管件包含:
通道,所述通道经配置以接口连接于到达所述控制系统的通讯连接。
18.如权利要求17所述的处理腔室,其中所述配线直通管件密封所述第二开口以免于流体流失,同时允许所述通讯连接通过其间传送通讯信号。
19.如权利要求13所述的处理腔室,其中所述裂口垫板包含:
接口连接于所述安装头的针销,并且所述针销将所述裂口垫板以一方位定位在所述安装头中,所述方位将在所述安装头中的孔洞对准在所述裂口垫板中的孔洞。
20.如权利要求13所述的处理腔室,其中所述安装头是锥形的并且所述裂口垫板是六边形的。
21.一种处理基板的方法,所述基板设置在基板支撑件上,所述方法包含:
将基板夹持到基板支撑件;
用设置在所述基板支撑件的背侧气孔中的传感器监测基板上的夹持力,所述传感器包含:
传感器组件,所述传感器组件设置在所述气孔中并且经配置以检测度量,所述度量指示出设置在所述工件支撑表面上的工件的偏折,其中
所述传感器组件经配置以当被定位在所述气孔中时允许气体流过所述传感器组件;和
使气体流动通过所述背侧气孔而流过所述传感器。
22.如权利要求21所述的方法,其中所述传感器组件包含:
多孔传感器外壳;和
传感器,所述传感器设置在所述传感器外壳中。
23.如权利要求22所述的方法,进一步包含:
用所述传感器测量所述基板的偏折,所述基板设置在所述基板支撑件上。
24.如权利要求23所述的方法,进一步包含:
基于所述基板的所测量的所述偏折,调整所述基板上的所述夹持力。
25.如权利要求24所述的方法,其中调整所述基板上的所述夹持力包含:
调整夹紧电压。
26.如权利要求24所述的方法,其中调整所述基板上的所述夹持力包含:
调整夹紧压力。
27.如权利要求23所述的方法,其中即时测量所述偏折以维持所述基板上的目标夹紧力。
28.如权利要求23所述的方法,其中使所述气体流动通过所述背侧气孔进一步包含:
使气体流动通过在所述传感器组件中的一个或多个孔洞。
29.如权利要求21所述的方法,进一步包含:
在所夹持的所述基板上执行工艺。
30.一种用于调整基板上的夹紧力的方法,所述基板设置在基板支撑件上,所述方法包含:
监测基板上的夹持力,所述基板设置在基板支撑件上,其中用设置在所述基板支撑件的背侧气体提供孔中的传感器监测所述夹持力;
用所述传感器即时测量所述基板的偏折,所述基板设置在所述基板支撑件上;和
基于所述基板的所测量的所述偏折,调整所述基板上的所述夹持力。
31.如权利要求30所述的方法,其中调整所述基板上的所述夹持力包含:
通过调整夹紧电压调整所述夹紧力。
32.如权利要求30所述的方法,其中调整所述基板上的所述夹持力包含:
通过调整夹紧真空压力调整所述夹紧力。
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CN206610799U (zh) | 2017-11-03 |
US20230253188A1 (en) | 2023-08-10 |
JP6878413B2 (ja) | 2021-05-26 |
JP7112565B2 (ja) | 2022-08-03 |
US20210066038A1 (en) | 2021-03-04 |
TW201944532A (zh) | 2019-11-16 |
JP7443430B2 (ja) | 2024-03-05 |
KR20240129089A (ko) | 2024-08-27 |
KR20180041248A (ko) | 2018-04-23 |
WO2017044201A1 (en) | 2017-03-16 |
CN107039325B (zh) | 2024-01-19 |
TW202036780A (zh) | 2020-10-01 |
US20240258075A1 (en) | 2024-08-01 |
TW201711132A (zh) | 2017-03-16 |
US11915913B2 (en) | 2024-02-27 |
US11676802B2 (en) | 2023-06-13 |
TWI729429B (zh) | 2021-06-01 |
JP2018530150A (ja) | 2018-10-11 |
JP2022159321A (ja) | 2022-10-17 |
KR102696914B1 (ko) | 2024-08-19 |
US20170076915A1 (en) | 2017-03-16 |
US10879046B2 (en) | 2020-12-29 |
JP2021121030A (ja) | 2021-08-19 |
TWI670792B (zh) | 2019-09-01 |
CN107039325A (zh) | 2017-08-11 |
SG10202002453XA (en) | 2020-05-28 |
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