WO2017026317A1 - Module de détection d'image - Google Patents

Module de détection d'image Download PDF

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Publication number
WO2017026317A1
WO2017026317A1 PCT/JP2016/072521 JP2016072521W WO2017026317A1 WO 2017026317 A1 WO2017026317 A1 WO 2017026317A1 JP 2016072521 W JP2016072521 W JP 2016072521W WO 2017026317 A1 WO2017026317 A1 WO 2017026317A1
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WO
WIPO (PCT)
Prior art keywords
image sensor
sensor module
interposer substrate
module according
holes
Prior art date
Application number
PCT/JP2016/072521
Other languages
English (en)
Japanese (ja)
Inventor
美秋 鶴岡
浅野　雅朗
前川　慎志
Original Assignee
大日本印刷株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2016101074A external-priority patent/JP6191728B2/ja
Application filed by 大日本印刷株式会社 filed Critical 大日本印刷株式会社
Priority to CN201680047033.9A priority Critical patent/CN107924924B/zh
Publication of WO2017026317A1 publication Critical patent/WO2017026317A1/fr
Priority to US15/892,464 priority patent/US10681256B2/en
Priority to US16/861,342 priority patent/US11153471B2/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices

Definitions

  • This disclosure relates to an image sensor module.
  • the present invention relates to an image sensor module using a solid-state imaging device built in a portable electronic device or tablet terminal.
  • Solid-state imaging devices are widely known as image sensors built in portable electronic devices and tablet terminals.
  • the solid-state imaging device has a light receiving surface in which pixels having photoelectric conversion elements are arranged on a semiconductor chip or the like.
  • an optical system such as a lens
  • the output light can be obtained by converting the light of the image into a charge amount corresponding to the brightness and acquiring an electric signal. it can.
  • Patent Document 1 discloses a solid-state imaging device mounted on a substrate, a bonding wire that electrically connects a pad formed on the solid-state imaging device and a lead formed on the substrate, and a side portion of the solid-state imaging device.
  • a solid-state imaging device is disclosed in which a frame member and a solid-state imaging element are integrally fixed in a state having leg portions and the ends of bonding wires connected to pads are covered with the leg portions.
  • the optical axis of the lens group included in the lens unit and the normal line of the solid-state image sensor need to match.
  • the same substrate is used as the mounting reference surface for the lens unit and the solid-state imaging device, but the flatness of the substrate is not mentioned.
  • the accuracy of the parallelism of the light receiving surface of the semiconductor chip, which is a solid-state imaging device bonded and fixed to the substrate, is secured, and the lens unit When fixed, it requires a complicated process of assembling the lens system with the accuracy of the optical axis verticality based on the substrate surface, and the optical axis of the lens group of the lens unit and the normal of the solid-state image sensor deviate. There is concern.
  • the present disclosure is intended to provide a structure of an image sensor module that allows easy and highly accurate assembly of an optical system.
  • An image sensor module includes an interposer substrate having a first surface and a second surface opposite to the first surface, having translucency, and having a plurality of through holes, and an interposer An image sensor located at a position facing the first surface of the substrate, having a light receiving surface on which the photoelectric conversion element is disposed on the interposer substrate side, and connected to an external circuit via electrodes in a plurality of through holes And a lens unit at a position facing the second surface side of the interposer substrate.
  • the lens unit has three or more struts, and at least three struts are inserted into the plurality of through holes.
  • the lens unit includes an imaging lens group, a first case having the imaging lens group, and a second case connected to the first case via a plurality of springs.
  • the second case includes at least three support columns. Have.
  • the first case has a coil surrounding the first case, and has at least two columns having conductivity and connected to the coil.
  • the lens unit is detachably arranged. *
  • a light absorption layer is provided on the surface of the interposer substrate, on the side surface of the interposer substrate, on the side walls of the plurality of through holes, and in a region other than the light receiving surface of the image sensor.
  • the light absorption layer is a metal.
  • the light absorbing layer is a black resin.
  • ⁇ An anti-reflection layer formed in a region facing the light receiving surface of the image sensor on both sides of the interposer substrate.
  • the antireflection layer is a sheet having a moth-eye structure.
  • Each of the electrodes in the plurality of through holes is filled with each of the plurality of through holes.
  • Each of the electrodes in the plurality of through holes has a cavity inside.
  • the insulating material is resin.
  • the ends of the electrodes in the plurality of through holes on the second surface side are located closer to the image sensor than the first surface.
  • the ends on the first surface side of the electrodes in the plurality of through holes exist on the same plane parallel to the first surface.
  • the interposer substrate has a convex portion surrounding the side walls of the plurality of through electrodes on the second surface side.
  • FIG. 1 is a cross-sectional view illustrating a schematic configuration of an image sensor module 100 according to the present embodiment.
  • FIG. 2 is an exploded cross-sectional view illustrating a schematic configuration of the image sensor module 100 according to the present embodiment.
  • FIG. 3 is a cross-sectional view illustrating a schematic configuration of the image sensor module 100 according to the present embodiment. 1 and 2 show a cross section taken along a plane including the optical axis of the image sensor module 100.
  • FIG. FIG. 3 shows a cross section taken along a plane passing through AA ′ of FIG. 1 and perpendicular to the optical axis of the image sensor module 100.
  • the image sensor module 100 includes an interposer substrate 102, an image sensor 104, a lens unit 106, a heat radiating member 134, a third case 136, a permanent magnet 140, and a cover 138.
  • the interposer substrate 102 has a first surface 102a and a second surface 102b.
  • the second surface 102b is a surface opposite to the first surface 102a.
  • FIG. 4 is a perspective view illustrating the configuration of the interposer substrate 102 according to the present embodiment.
  • FIG. 5 is a plan view illustrating the configuration of the interposer substrate 102 according to the present embodiment.
  • the interposer substrate 102 has a plurality of through holes 108.
  • Each of the plurality of through holes 108 includes those having different purposes, and in the present embodiment, the through holes 108 are classified into two types depending on the purpose. In the following description, when distinguishing them, they are referred to as the first through hole 108A or the second through hole 108B.
  • the plurality of first through holes 108A are provided in order to form electrodes for electrically connecting the image sensor 104 and an external circuit (not shown) therein.
  • the plurality of second through holes 108B are provided in order to insert a column 118 for placing the lens unit 106 on the second surface 102b side.
  • the plurality of first through holes 108A are roughly arranged along the four sides of the rectangle. Nineteen first through holes 108A are arranged along two opposing long sides of the rectangle, and eleven first through holes A are arranged along two opposing short sides. On each side of the rectangle, the plurality of first through holes 108A are arranged in two rows. Further, the plurality of first through holes 108A are arranged in a zigzag shape.
  • the number, layout, and the like of the plurality of first through holes 108A are not limited to the above-described configuration.
  • the number of first through holes 108 ⁇ / b> A may be more than the number necessary to form a wiring connecting the image sensor module 100 and an external circuit.
  • the layout of the plurality of first through holes 108 ⁇ / b> A in plan view may not overlap with the plurality of photoelectric conversion elements arranged on the light receiving surface 104 a of the image sensor 104.
  • the number of second through holes 108B is four.
  • the four second through holes 108B are arranged in the vicinity of the four corners of the interposer substrate 102.
  • the diameter of the 2nd through-hole 108B has shown the aspect larger than the diameter of 108 A of 1st through-holes.
  • the number, layout, diameter, and the like of the plurality of second through holes 108B are not limited to the above configuration. Although the number of second through holes 108B will be described in detail later, it is sufficient that the number of second through holes 108B is three or more.
  • the layout of the plurality of second through holes 108 ⁇ / b> B in a plan view may not be arranged on a single straight line but may overlap with the plurality of photoelectric conversion elements arranged on the light receiving surface 104 a of the image sensor 104.
  • the support column 118 needs to have a sufficient strength to stably dispose the lens unit 106 on the second surface 102b of the interposer substrate 102, and therefore needs to have a sufficient diameter.
  • a light-transmitting substrate is used so that light reflected by the subject is incident on the light receiving surface 104a of the image sensor 104 disposed below the interposer substrate 102.
  • both surfaces of the interposer substrate 102 also serve as assembly reference surfaces for optical systems such as the lens unit 106 and the image sensor 104.
  • the normal line of the light receiving surface 104a of the image sensor 104 and the optical axis of the imaging lens group 120 disposed in the lens unit 106 are matched with high accuracy. Therefore, as the interposer substrate 102, it is desirable to use a substrate having high flatness on both surfaces and high parallelism on both surfaces.
  • a glass substrate can be used as such a substrate.
  • the glass substrate for example, quartz glass, alkali-free glass, borosilicate glass, aluminosilicate glass, soda glass, titanium-containing silicate glass, or the like can be used.
  • a sapphire substrate, a silicon carbide (SiC) substrate, an alumina (Al 2 O 3 ) substrate, an aluminum nitride (AlN) substrate, a zirconia oxide (ZrO 2 ) substrate, or the like can be used.
  • substrates can be used.
  • the image sensor 104 is disposed at a position facing the first surface 102a of the interposer substrate 102.
  • the image sensor 104 is connected to an external circuit (not shown) via electrodes in the plurality of first through holes 108A.
  • the image sensor 104 has a light receiving surface 104a on the interposer substrate 102 side.
  • a plurality of photoelectric conversion elements are arranged in a matrix, for example, on the light receiving surface 104a.
  • the photoelectric conversion element for example, a CMOS image sensor, a CCD image sensor, or the like can be used.
  • FIG. 6 is a cross-sectional view illustrating the configuration of the CMOS image sensor according to the present embodiment.
  • the CMOS image sensor includes a photodiode 148, a wiring layer 150, a color filter 152, and a microlens 154.
  • the photodiode 148 converts incident light into electric charge. When light enters the photodiode 148, a part of the light generates electron / hole pairs near the PN junction of the photodiode 148. At this time, by applying a reverse bias to the photodiode 148, information on the generated carrier pair can be extracted as a current.
  • the wiring layer 150 is arranged in a layer above the photodiode 148 in the present embodiment.
  • the wiring layer 150 includes a wiring for detecting a carrier pair signal generated in the photodiode 148 and an element such as a transistor. These wirings, elements, and the like are arranged away from the top of the photodiode 148 in order to efficiently take in external light into the photodiode 148.
  • the color filter 152 selects the color of light incident on the photodiode 148.
  • Each of the plurality of CMOS image sensors has a color filter 152 of at least three colors.
  • the microlens 154 is provided in order to efficiently collect incident light on the photodiode 148.
  • a planarization layer 156 may be provided under the microlens 154.
  • CMOS image sensor 104 disposed on the light receiving surface 104a of the image sensor 104 according to the present embodiment has been described above.
  • the lens unit 106 is disposed at a position facing the second surface 102b of the interposer substrate 102.
  • the lens unit 106 includes an imaging lens group 120, a first case 122, a second case 124, a plurality of columns 118, and an infrared filter 128.
  • the imaging lens group 120 may include a plurality of lenses, and forms an image of light emitted from a subject and incident on the image sensor module 100 on the light receiving surface 104a of the image sensor 104.
  • the first case 122 has an imaging lens group 120.
  • the first case 122 includes the imaging lens group 120.
  • the first case 122 has a cylindrical shape, and its side wall supports the periphery of the plurality of lenses included in the imaging lens group 120.
  • a coil 130 is wound around the first case 122.
  • the coil 130 is provided to control the arrangement of the imaging lens group 120. By controlling the current supplied to the coil 130, the arrangement of the imaging lens group 120 is controlled by the interaction between the magnetic field induced by the current and the permanent magnet 140.
  • the second case 124 is joined to the first case 122.
  • the second case 124 is joined to the first case 122 via a plurality of springs 132 to house the first case 122.
  • the first case 122 is disposed so as to be swingable with respect to the second case 124 by controlling the current supplied to the coil 130.
  • the second case 124 has a quadrangular prism shape in the present embodiment.
  • a transparent resin substrate 126 is used on the side surface of the second case 124 facing the imaging lens group 120 in order to take outside light into the image sensor module 100.
  • a plurality of support columns 118 are provided in the second case 124. Each of the plurality of columns 118 is inserted into the plurality of second through holes 108 ⁇ / b> B of the interposer substrate 102. Accordingly, the lens unit 106 can be detachably disposed on the second surface 102b of the interposer substrate 102.
  • the number of columns 118 is preferably three or more in order to stably dispose the lens unit 106 on the second surface 102b of the interposer substrate 102.
  • the layout of the plurality of pillars 118 in a plan view may not be arranged on one straight line and may not overlap with the plurality of photoelectric conversion elements arranged on the light receiving surface 104a of the image sensor 104.
  • the support column 118 needs to have a sufficient strength to stably dispose the lens unit 106 on the second surface 102b of the interposer substrate 102, and therefore needs to have a sufficient diameter.
  • two pillars 118 are connected to the coil 130.
  • the two struts 118 may be connected to both ends of the coil 130.
  • the position of the imaging lens group 120 is controlled by controlling the current supplied to the coil 130 via the two columns.
  • the support column 118 can also serve as the wiring connected to the coil 130, and the wiring structure is simplified.
  • the infrared filter 128 is a filter that absorbs light in the infrared region from light incident through the imaging lens group 120.
  • the infrared filter 128 is disposed in the lens unit 106 and is disposed below the imaging lens group 120.
  • the arrangement of the infrared filter 128 is not limited to this. That is, it is sufficient that the light from the subject passes through the imaging lens group 120 and then passes through the infrared filter 128.
  • the first surface 102a of the interposer substrate 102 may be fixed and arranged.
  • the configuration of the lens unit 106 included in the image sensor module 100 according to the present embodiment has been described above.
  • the image sensor module 100 according to the present embodiment has high accuracy between the normal line of the light receiving surface 104a of the image sensor 104 and the optical axis of the imaging lens group 120 arranged in the lens unit 106. Can be matched with.
  • the heat radiating member 134 is fixed and arranged on the surface opposite to the light receiving surface 104a of the image sensor 104.
  • the third case 136 has a recess, and at least the image sensor 104 and the heat radiating member 134 are disposed in the recess, and are fixed to the interposer substrate 102.
  • the permanent magnet 140 is disposed outside the second case 124 so as to surround the coil 130.
  • one permanent magnet 140 is disposed on each of the four side surfaces of the second case.
  • the layout of the permanent magnet 140 of this embodiment is an example, Comprising: It is not restricted to this.
  • the cover 138 houses the lens unit 106 and the permanent magnet 140.
  • As the cover material 138 metal, ceramic, or the like can be used.
  • the interposer substrate 102 also serves as an assembly reference surface for the optical system.
  • a simple and highly accurate optical system can be assembled. That is, the normal line of the light receiving surface 104a of the image sensor 104 and the optical axis of the imaging lens group 120 arranged in the lens unit 106 can be easily and accurately matched.
  • FIG. 7 is a cross-sectional view illustrating a configuration around the interposer substrate 102 of the image sensor module 100 according to the present embodiment.
  • the image sensor module 100 may have a light absorption layer 112 on a part of the surface of the interposer substrate 102.
  • the light absorption layer 112 is provided on the surface of the interposer substrate 102, the side surface of the interposer substrate 102, the side walls of the plurality of through holes 108, and the region other than the light receiving surface 104 a of the image sensor 104.
  • the light absorption layer 112 has an opening that exposes the light receiving surface 104a of the image sensor 104 so that the light reflected by the subject enters the light receiving surface 104a of the image sensor 104.
  • the light absorption layer 112 is provided in order to prevent light that has entered the interposer substrate 102 from being irregularly reflected by an electrode or the like and becoming stray light. When such stray light enters the image sensor 104, there is a concern that it may appear as a flare and appear in the captured image. Therefore, the material of the light absorption layer 112 is preferably a material that absorbs light that has entered the interposer substrate 102 and does not transmit or reflect it.
  • the material of the light absorption layer 112 for example, metal, black resin, or the like can be used.
  • metal for example, nickel (Ni), lead (Pb), gold (Au), copper (Cu), or the like can be used.
  • the black resin includes at least a photosensitive resin composition, a photopolymerization initiator, a pigment, and a solvent, and these compositions are appropriately combined to form a black resin composition.
  • a photosensitive resin composition a negative photosensitive resin composition can be used.
  • the photosensitive resin composition containing an acryl-type monomer, an oligomer, and a polymer can be used, for example.
  • the pigment examples include carbon black, titanium black such as titanium oxide and titanium oxynitride, metal oxide such as iron oxide, and other mixed organic pigments.
  • a black resin what disperse
  • a non-photosensitive resin composition for example, a polyimide resin can be used.
  • a pigment in which carbon black is dispersed can be used as the pigment.
  • aniline black, acetylene black, phthalocyanine black, titanium black or the like may be dispersed as a pigment.
  • the metal such as the plurality of first through electrodes 110 ⁇ / b> A and the wiring 142 disposed on both surfaces of the interposer substrate 102 is not disposed in contact with the light-transmitting interposer substrate 102. Via the interposer substrate 102.
  • the first through electrode 110A may be arranged so as to fill the first through hole 108A as in the present embodiment. Although details will be described later, the first through electrode 110A may be hollow by being disposed only on the side wall of the first through hole 108A. Furthermore, a space that has become hollow by disposing the first through electrode 110A only on the side wall of the first through hole 108A may be filled with an insulating material such as a resin.
  • a second through electrode 110B may be provided in each of the plurality of second through holes 108B included in the interposer substrate 102. However, this is not essential. Since the column 118 is inserted into the second through-hole 108B, when the second through-electrode 110B is provided, the second through-hole 108B is made hollow by being disposed only on the side wall of the second through-hole 108B.
  • the both sides of the interposer substrate 102 may have an antireflection layer 114 formed in a region facing the image sensor 104.
  • a sheet having a moth-eye structure can be used as the antireflection layer 114.
  • the moth-eye structure is a structure having a plurality of protrusions periodically arranged on the surface. The period of the arrangement of the protrusions is, for example, not less than 100 nm and not more than 300 nm.
  • the height of the protrusion is preferably smaller than the wavelength of visible light, and is, for example, 100 nm or more and 300 nm or less.
  • a material for the sheet having a moth-eye structure for example, a resin can be used as a material for the sheet having a moth-eye structure.
  • the plurality of through electrodes 110 are connected to the wiring 142 included in the image sensor 104 via the solder balls 116 disposed at the end of the interposer substrate 102 on the first surface 102a side. That is, the image sensor 104 is flip-chip connected to the interposer substrate 102.
  • the configuration around the interposer substrate 102 of the image sensor module 100 according to the present embodiment has been described above.
  • stray light due to irregular reflection of light that has entered the interposer substrate 102 can be suppressed, and generation of flare associated therewith can be suppressed.
  • the light absorption layer 112 is not provided, there is a concern that light entering the interposer substrate 102 is irregularly reflected by the metal such as the through electrode 110 and the wiring 142 to become stray light and flare occurs.
  • a method for forming the through hole 108 in the interposer substrate 102 will be described.
  • a method of forming the through hole 108 laser irradiation, wet etching, dry etching, or the like can be used.
  • excimer laser Nd: YAG laser (fundamental wave (wavelength: 1064 nm), second harmonic (wavelength: 532 nm), third harmonic (wavelength: 355 nm), etc.), femto can be used.
  • a second laser or the like can be used.
  • wet etching it is possible to use wet etching using hydrogen fluoride (HF), sulfuric acid (H 2 SO 4 ), nitric acid (HNO 3 ), hydrochloric acid (HCl), or a mixture thereof. it can. Further, the laser irradiation and wet etching described above can be combined as appropriate. That is, an altered layer can be formed in the through-hole formation region of the interposer substrate 102 by laser irradiation, and the altered layer can be etched by being immersed in HF.
  • HF hydrogen fluoride
  • H 2 SO 4 sulfuric acid
  • HNO 3 nitric acid
  • HCl hydrochloric acid
  • RIE Reactive Ion Etching
  • DRIE Deep RIE
  • Bosch process sand blast method
  • laser processing such as laser ablation, or the like
  • each interposer substrate 102 is separated into pieces by dicing.
  • the separated interposer substrate 102 is adsorbed with a catalyst as a pretreatment step of the electroless plating method.
  • it is immersed in a predetermined plating solution to form a metal film.
  • it is immersed in a resist stripping solution and is run with water.
  • the interposer substrate 102 a protective layer such as a film resist is formed in a region where the light absorption layer 112 as described above is not disposed.
  • each interposer substrate 102 is separated into pieces by dicing.
  • the separated interposer substrate 102 is dipped in a black resin to be blackened.
  • the protective layer is removed by dipping in a stripping solution.
  • the method for forming the light absorption layer 112 has been described above. Next, a method for forming the through electrode 110 will be described.
  • FIGS. 8A to 11B are cross-sectional views of each through electrode 110 formed by the above-described method.
  • FIGS. 8B, 9B, 10B, and 11B are views of each through electrode 110.
  • FIG. It is a top view.
  • FIGS. 8A and 8B are a cross-sectional view and a top view of the through electrode 110a formed by filling plating, respectively.
  • a metal layer as a seed layer is formed from one side of the interposer substrate 102 in which the through hole 108 is formed, and a plating layer is grown on the metal layer by an electrolytic plating method.
  • the opening end of the cover is closed (cover plating is formed).
  • a plating layer filling the inside of the through hole 108 is grown by an electrolytic plating method using lid plating as a seed layer.
  • FIGS. 9A and 9B are a cross-sectional view and a top view of the through electrode 110b formed by sputtering or vapor deposition, respectively.
  • the through electrode 110b shown in FIGS. 9A and 9B is provided on the side wall of the through hole 108, and a cavity is provided inside the through electrode 110b.
  • a metal layer can be formed on the side wall of the through hole 108.
  • the through electrode 110 can be formed even in the through hole 108 having a large aspect ratio as compared with the process of only one side.
  • a metal layer can be formed on the side wall of the through hole 108 by electroless plating.
  • FIG. 10A and 10B are a cross-sectional view and a top view of the through electrode 110c formed by conformal plating, respectively.
  • the through electrode 110c shown in FIG. 10A and FIG. 10B has a cavity provided inside the through electrode 110c in the same manner as the through electrode 110b.
  • conformal plating a metal layer formed on the side wall of the through-hole 108 by sputtering, vapor deposition, or electroless plating is used as a seed layer, and a plating layer having a cavity formed thereon is grown by electrolytic plating. .
  • the through electrode 110c formed by conformal plating has a hollow inside of the through hole 108, and therefore the through hole 108 may be filled using a resin or the like.
  • 11A and 11B are a cross-sectional view and a top view of a through electrode 110d in which a through electrode 110c formed by conformal plating is filled with a resin 146, respectively.
  • the image sensor module 100 according to the present embodiment has been described above.
  • the image sensor 104 and the lens unit 106 are both arranged with the interposer substrate 102 as an attachment reference plane.
  • the image sensor module 100 has the above-described configuration, so that the normal line of the light receiving surface 104a of the image sensor 104 and the optical axis of the imaging lens group 120 can be easily and accurately matched. Can do. Therefore, it is possible to control so that the image of the subject is uniformly formed over the entire effective light receiving surface 104a of the image sensor 104.
  • FIG. 12 is a cross-sectional view illustrating the configuration of the image sensor module 200 according to the present embodiment.
  • the image sensor module 200 according to the present embodiment differs from the image sensor module 100 according to the first embodiment only in the configuration around the interposer substrate 102.
  • FIG. 13 is a cross-sectional view illustrating a configuration around the interposer substrate 102 of the image sensor module 200 according to the present embodiment.
  • the end of the first through electrode 110A in the plurality of first through holes 108A on the first surface 102a side is located closer to the image sensor 104 than the first surface 102a.
  • the end portion on the first surface 102 a side of the first through electrode 110 ⁇ / b> A in the plurality of first through holes 108 ⁇ / b> A protrudes from the interposer substrate 102.
  • the broken line P shown in FIG. 13 indicates a plane parallel to the second surface 102b of the interposer substrate 102.
  • the ends of the plurality of first through electrodes 110A on the first surface 102a side are located on the broken line P. That is, the end portions on the first surface 102 a side of the plurality of first through electrodes 110 ⁇ / b> A are positioned on a plane parallel to the second surface 102 b of the interposer substrate 102.
  • both are connected only by the plurality of protruding first through electrodes 110A, and the first surface 102a of the interposer substrate 102 and the image sensor 104 are not in contact with each other.
  • the image sensor 104 and the interposer substrate 102 are arranged in parallel with high accuracy, and the alignment of both in the manufacturing process becomes easy.
  • connection between surfaces for example, in the connection process, if an air layer or the like is generated between the two, control for alignment becomes difficult, and there is a concern that the yield may be reduced.
  • the light absorption layer 112 is formed on at least the side walls of the through holes 108A and 108B using the method described above.
  • the through electrode 110 is protected only for the first surface 102a of the interposer substrate 102, and only the interposer substrate 102 is thinned by etching.
  • the through electrode 110 included in the image sensor module 200 according to the present embodiment can be formed. Accordingly, although the flatness of the first surface 102a of the interposer substrate 102 is deteriorated, it is maintained that the end portions of the plurality of through electrodes 110 related to the connection with the image sensor 104 exist on the same plane. According to this method, the solder ball 116 used for flip chip connection is not required. Furthermore, since the through electrode 110 is formed in a self-aligning manner without requiring patterning using a photomask or the like, the manufacturing process is simplified.
  • FIG. 14 is a cross-sectional view illustrating the configuration of the image sensor module 300 according to the present embodiment.
  • the image sensor module 300 according to the present embodiment differs from the image sensor module 200 according to the second embodiment only in the configuration of the interposer substrate 102 portion.
  • FIG. 15 is a cross-sectional view illustrating the interposer substrate 102 portion of the image sensor module 300 according to the present embodiment.
  • the image sensor module 300 relates to the second embodiment in that the interposer substrate 102 has convex portions surrounding the side walls of the plurality of first through electrodes 110A on the first surface 102a side. This is different from the image sensor module 200.
  • a broken line P shown in FIG. 15 indicates a plane parallel to the second surface 102b of the interposer substrate 102.
  • the ends of the plurality of first through electrodes 110A on the first surface 102a side are located on the broken line P. That is, the end portions on the first surface 102 a side of the plurality of first through electrodes 110 ⁇ / b> A are positioned on a plane parallel to the second surface 102 b of the interposer substrate 102.
  • both are connected through only the plurality of protruding through electrodes 110, and the first surface 102a of the interposer substrate 102 and the image sensor 104 do not contact each other.
  • the image sensor 104 and the interposer substrate 102 are arranged in parallel with high accuracy, and the alignment of both in the manufacturing process becomes easy. Further, since the side wall of the through electrode 110 is protected by the interposer substrate 102, the mechanical strength of the interposer substrate 102 on which the through electrode 110 is formed is improved.
  • connection between surfaces for example, in the connection process, if an air layer or the like is generated between the two, control for alignment becomes difficult, and there is a concern that the yield may be reduced.
  • the light absorption layer 112 is formed on at least the side walls of the through holes 108A and 108B using the method described above.
  • a resist that protects the through electrode 110 and its peripheral portion is formed only on the first surface 102a of the interposer substrate 102, and is thinned by etching.
  • the through electrode 110 included in the image sensor module 300 according to the present embodiment can be formed. Thereby, although the flatness of the first surface 102a of the interposer substrate 102 is deteriorated, it is maintained that the end portions of the plurality of through electrodes 110 related to the connection with the image sensor 104 exist on the same plane. The region of the interposer substrate 102 that is protected without being etched in the peripheral region of the through hole 108 also exists on the same plane. According to this method, the solder ball 116 used for flip chip connection is not required. Further, since the side wall of the through electrode 110 is protected by the interposer substrate 102, the mechanical strength of the interposer substrate 102 on which the through electrode 110 is formed is improved.
  • FIGS. 17A to 17E are diagrams illustrating examples of application products in which the image sensor module according to the embodiment of the present disclosure can be mounted.
  • the image sensor modules 100 to 300 manufactured as described above can be mounted on various application products. For example, it is mounted on a notebook personal computer 1000, a tablet terminal 2000, a mobile phone 3000, a smartphone 4000, a digital video camera 5000, a digital camera 6000, and the like.
  • the present invention can also be applied to a smartphone 4100 having a dual camera on which two image sensor modules 300a and 300b according to an embodiment of the present disclosure are mounted. In this example, a mode in which a dual camera is provided on the back surface of the smartphone 4100 is shown.
  • a conventional camera mounted on a smartphone composed of only one image sensor has a problem that the depth of field becomes very deep due to the size restriction of the image sensor. Therefore, by mounting a dual camera having two image sensors on a smartphone, images can be recorded under two different conditions and combined after shooting, and for example, it is possible to adjust the depth of field equivalent to a single-lens reflex camera.
  • the number of image sensor modules 300a and 300b is not limited to two and may be three or more.
  • the plurality of image sensor modules is not limited to a mode in which the image sensor modules are arranged in a row in the horizontal direction like the smartphone 4100 illustrated in the drawing, and may be arranged in the vertical direction or may be irregularly arranged.
  • the image sensor module 300 may be mounted on a wristwatch.
  • the wristwatch 7000 shows a mode in which the image sensor module 300 is mounted in the vicinity of the crown 7010.
  • the wristwatch 7100 shows a mode in which the image sensor module 300 is mounted in the vicinity of the band (direction at 12 o'clock).
  • the wristwatch 7200 shows a mode in which the image sensor module 300 is mounted on the display panel. Then, like the wristwatch 7300, the image sensor module 300 may be mounted on the side opposite to the side where the wristwatch 7000 is arranged, that is, the side opposite to the side where the crown 7010 is arranged.
  • Image sensor module 102 Interposer substrate 102a: First surface 102b: Second surface 104: Image sensor 104a: Light receiving surface 106: Lens unit 108: Through hole 108A: First through hole 108B: Second through Hole 110: Through electrode 110A: First through electrode 110B: Second through electrode 112: Light absorption layer 114: Antireflection layer 116: Solder ball 117: Protrusion 118: Prop 120: Imaging lens group 122: First case 124: Second case 126: Transparent resin substrate 128: Infrared filter 130: Coil 132: Spring 134: Heat dissipation member 136: Third case 138: Cover 140: Permanent magnet 142: Wiring 144: FPC 146: Resin 148: Photodio 150: wiring layer 152: color filter 154: microlens 156: flattening layer 1000: notebook personal computer 2000: tablet terminal 3000: mobile phone 4000, 4100: smartphone 5000: digital video camera 6000: digital camera 7000, 7100

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

L'invention concerne une structure de module de détection d'image permettant un assemblage de système optique simple et hautement précis. Ce module de détection d'image est pourvu : d'un substrat d'interposition translucide, qui a une première surface, une seconde surface sur le côté inverse de la première surface, et une pluralité de trous traversants ; d'un capteur d'image, qui est disposé au niveau d'une position faisant face à la première surface du substrat d'interposition, et qui a une surface de réception de lumière ayant une pluralité d'éléments de conversion photoélectrique qui sont disposés sur le côté substrat d'interposition, ledit capteur d'image étant connecté à un circuit externe par l'intermédiaire d'électrodes dans les trous traversants ; et d'une unité de lentille qui est disposée au niveau d'une position faisant face à la seconde surface du substrat d'interposition.
PCT/JP2016/072521 2015-08-10 2016-08-01 Module de détection d'image WO2017026317A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201680047033.9A CN107924924B (zh) 2015-08-10 2016-08-01 图像传感器模块
US15/892,464 US10681256B2 (en) 2015-08-10 2018-02-09 Image sensor module including a light-transmissive interposer substrate having a through-hole
US16/861,342 US11153471B2 (en) 2015-08-10 2020-04-29 Through-hole electrode substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2015158164 2015-08-10
JP2015-158164 2015-08-10
JP2016101074A JP6191728B2 (ja) 2015-08-10 2016-05-20 イメージセンサモジュール
JP2016-101074 2016-05-20

Related Child Applications (1)

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US15/892,464 Continuation US10681256B2 (en) 2015-08-10 2018-02-09 Image sensor module including a light-transmissive interposer substrate having a through-hole

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Publication Number Publication Date
WO2017026317A1 true WO2017026317A1 (fr) 2017-02-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807430A (zh) * 2017-04-28 2018-11-13 南昌欧菲光电技术有限公司 摄像模组及其复合式感光组件
EP3965410A4 (fr) * 2019-04-30 2022-05-25 Ningbo Sunny Opotech Co., Ltd. Module de caméra et son ensemble photosensible, dispositif électronique et procédé de fabrication

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079745A (ja) * 2002-08-16 2004-03-11 Sony Corp インターポーザおよびその製造方法、並びに電子回路装置およびその製造方法
JP2008191267A (ja) * 2007-02-01 2008-08-21 Sony Corp 像ぶれ補正装置、レンズ鏡筒及び撮像装置
JP2010045082A (ja) * 2008-08-08 2010-02-25 Sharp Corp 表示素子・電子素子モジュールおよびその製造方法、電子情報機器
JP2010252164A (ja) * 2009-04-17 2010-11-04 Panasonic Corp 固体撮像装置
JP2011119481A (ja) * 2009-12-03 2011-06-16 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2013153361A (ja) * 2012-01-26 2013-08-08 Konica Minolta Inc カメラモジュール
JP2015068853A (ja) * 2013-09-26 2015-04-13 ソニー株式会社 積層体、撮像素子パッケージ、撮像装置および電子機器
WO2015076309A1 (fr) * 2013-11-21 2015-05-28 旭硝子株式会社 Composition durcissable, produit durci, module de caméra et procédé de fabrication de dispositif d'imagerie

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004079745A (ja) * 2002-08-16 2004-03-11 Sony Corp インターポーザおよびその製造方法、並びに電子回路装置およびその製造方法
JP2008191267A (ja) * 2007-02-01 2008-08-21 Sony Corp 像ぶれ補正装置、レンズ鏡筒及び撮像装置
JP2010045082A (ja) * 2008-08-08 2010-02-25 Sharp Corp 表示素子・電子素子モジュールおよびその製造方法、電子情報機器
JP2010252164A (ja) * 2009-04-17 2010-11-04 Panasonic Corp 固体撮像装置
JP2011119481A (ja) * 2009-12-03 2011-06-16 Shinko Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2013153361A (ja) * 2012-01-26 2013-08-08 Konica Minolta Inc カメラモジュール
JP2015068853A (ja) * 2013-09-26 2015-04-13 ソニー株式会社 積層体、撮像素子パッケージ、撮像装置および電子機器
WO2015076309A1 (fr) * 2013-11-21 2015-05-28 旭硝子株式会社 Composition durcissable, produit durci, module de caméra et procédé de fabrication de dispositif d'imagerie

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108807430A (zh) * 2017-04-28 2018-11-13 南昌欧菲光电技术有限公司 摄像模组及其复合式感光组件
EP3965410A4 (fr) * 2019-04-30 2022-05-25 Ningbo Sunny Opotech Co., Ltd. Module de caméra et son ensemble photosensible, dispositif électronique et procédé de fabrication

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