WO2017026206A1 - Unité de chauffage - Google Patents

Unité de chauffage Download PDF

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Publication number
WO2017026206A1
WO2017026206A1 PCT/JP2016/069973 JP2016069973W WO2017026206A1 WO 2017026206 A1 WO2017026206 A1 WO 2017026206A1 JP 2016069973 W JP2016069973 W JP 2016069973W WO 2017026206 A1 WO2017026206 A1 WO 2017026206A1
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WO
WIPO (PCT)
Prior art keywords
heater unit
insulating layer
heat
base material
substrate
Prior art date
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PCT/JP2016/069973
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English (en)
Japanese (ja)
Inventor
年彦 花待
健二 関谷
剛 ▲高▼原
拓史 光田
尚哉 相川
Original Assignee
日本発條株式会社
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Publication of WO2017026206A1 publication Critical patent/WO2017026206A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material

Definitions

  • the present invention relates to a heater unit.
  • the present invention relates to a heater unit used in a semiconductor manufacturing apparatus.
  • a functional element such as a transistor element, a wiring, a resistance element, or a capacitor element is formed by forming and processing a thin film on a semiconductor substrate.
  • a method for forming a thin film on a semiconductor substrate methods such as a chemical vapor deposition (CVD) method and a physical vapor deposition (PVD) method are used.
  • a method for processing the thin film a method such as an ion reactive etching (RIE) method is used.
  • RIE ion reactive etching
  • a surface treatment process such as plasma treatment is performed in addition to the thin film formation and processing.
  • the apparatus used for the above film forming, processing and surface treatment steps is provided with a stage for supporting a semiconductor substrate.
  • the stage not only simply supports the semiconductor substrate but also has a function of adjusting the temperature of the semiconductor substrate in accordance with each processing step.
  • the stage is provided with a heating mechanism.
  • a ceramic heater (heater unit) made of metal or ceramics is widely used as a heating mechanism.
  • the above heater unit is required to have high temperature uniformity within the surface. Further, the heater unit is required not only to heat the stage but also to have a function of cooling the stage. That is, the heater unit is provided with a heating mechanism and a cooling mechanism. When cooling water is used for cooling the stage, it is necessary to heat the heater while flowing the cooling water through the flow path in order to avoid boiling of the cooling water. That is, it is necessary to achieve high in-plane uniformity by heating in a state where cooling water is flowed.
  • Patent Document 1 As described above, for example, a structure as shown in Patent Document 1 has been developed as a heater unit provided with a heating mechanism and a cooling mechanism.
  • a flow path is formed in a wafer holder that supports a semiconductor substrate, and the temperature of the wafer is adjusted by cooling the wafer holder by flowing a fluid through the flow path.
  • the wafer holder is made of a material having high thermal conductivity in order to enable rapid cooling. Therefore, the heat generated by the heat generating mechanism is taken away by the cooling mechanism. As a result, there is a problem that the in-plane uniformity of the heater unit deteriorates due to the influence of the position of the flow path of the cooling water. There is also a problem that the heating temperature of the stage is limited for the same reason.
  • the present invention has been made in view of such a problem, and an object of the present invention is to provide a semiconductor manufacturing apparatus having high in-plane temperature uniformity and less restriction of heating temperature.
  • a heater unit includes a base material having a cooling flow path, a heater portion disposed above the base material and having a heating element, and a heat insulating layer disposed between the base material and the heater portion. And having.
  • the heat conductivity of the heat insulating layer may be lower than the heat conductivity of the base material.
  • the heat insulating layer may be SUS.
  • the thickness of SUS may be 1 mm or more and 10 mm or less.
  • the heat insulating layer may have pores, and the pore content in the heat insulating layer may be 1% or more and 20% or less.
  • it may further include an insulator covering the heating element, and the heat conductivity of the heat insulating layer may be lower than the heat conductivity of the insulator.
  • a heat generating body has an insulator which covers a conductor and a conductor, and the heat conductivity of a thermal diffusion layer is insulation. It may be higher than the thermal conductivity of the body.
  • the base material may have a thermal conductivity of 100 W / mK or more.
  • the base material may have a gas flow path.
  • the heater unit according to the present invention can provide a semiconductor manufacturing apparatus with high in-plane temperature uniformity.
  • FIG. 2 is a cross-sectional view taken along the line A-A ′ of FIG. 1. It is sectional drawing of the heater unit which concerns on one Embodiment of this invention. It is a figure which shows what relationship the thickness of the heat insulation layer in the heater unit which concerns on one Example of this invention, and the ultimate temperature of a stage surface. It is a figure which shows which thermal temperature of the heat insulation layer in the heater unit which concerns on one Example of this invention, and the ultimate temperature of a stage surface. It is a figure which shows the electron microscope image of the heat insulation layer in the heater unit which concerns on one Example of this invention. It is a figure which shows the electron microscope image of the heat insulation layer in the heater unit which concerns on one Example of this invention. It is a figure which shows the electron microscope image of the heat insulation layer in the heater unit which concerns on one Example of this invention. It is a figure which shows the electron microscope image of the heat insulation layer in the heater unit which concerns on one Example of this invention. It is a figure which shows the electron microscope image of the heat insulation layer
  • the heater unit according to the present invention will be described with reference to the drawings.
  • the heater unit of the present invention can be implemented in many different modes and should not be construed as being limited to the description of the embodiments described below.
  • the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.
  • the description will be made using the terms “upper” or “lower”, and the upper and lower parts respectively indicate directions when the heater unit is used (when the apparatus is mounted).
  • the drawings may be schematically represented with respect to the width, thickness, shape, and the like of each part in comparison with actual aspects for the sake of clarity of explanation, but are merely examples, and the interpretation of the present invention is not limited. It is not limited.
  • the heater unit according to the first embodiment of the present invention has a heating mechanism and a cooling mechanism.
  • the heater unit according to the first embodiment can be used for a CVD apparatus, a sputtering apparatus, a vapor deposition apparatus, an etching apparatus, a plasma processing apparatus, a measurement apparatus, an inspection apparatus, a microscope, and the like.
  • the heater unit according to the first embodiment is not limited to the one used in the above apparatus, and can be used for an apparatus that needs to heat and cool the substrate.
  • FIG. 1 is a top view showing an overall configuration of a heater unit according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG.
  • the heater unit 10 according to the first embodiment includes a plate portion 100 and a shaft 200.
  • the plate unit 100 includes a first base 110, a second base 120, a heat insulating layer 130, a heating element 140, a first insulating layer 150, and a second insulating layer 160.
  • the first base 110 is provided with a source connection hole 117 and a drain connection hole 119.
  • the second substrate 120 is disposed on the first substrate 110, and the first flow path 115 is provided between the second substrate 120 and the first substrate 110.
  • the base material 310 it can be said that the first flow path 115 is provided in the base material 310.
  • the 1st flow path 115 is formed by joining the 1st base material 110 with a flat upper surface, and the 2nd base material 120 by which the recessed part was provided in the lower surface.
  • the heat insulating layer 130 is disposed above the second base material 120.
  • the first flow path 115 includes a source 111 connected to the source connection hole 117 and a drain 113 connected to the drain connection hole 119.
  • a cooling fluid is supplied to the first flow path 115.
  • the cooling fluid cooling water, cooling oil, gel fluid, or the like can be used.
  • the first insulating layer 150 is disposed above the heat insulating layer 130
  • the second insulating layer 160 is disposed above the first insulating layer 150
  • the heating element 140 includes the first insulating layer 150 and the second insulating layer. 160.
  • the heating element 140, the first insulating layer 150, and the second insulating layer 160 are referred to as the heater part 320
  • the heating element 140 is covered with the insulator 320 (the first insulating layer 150 and the second insulating layer 160). It can be said that.
  • the heating element 140 is covered with a first insulating layer 150 having a flat upper surface and a second insulating layer 160 having a recess on the lower surface.
  • the heater unit 10 includes the base material 310 having the first flow path 115, the heater unit 320 disposed above the base material 310 and having the heating element 140, and the base material 310 and the heater unit 320. It can also be said that the heat insulating layer 130 is disposed between the two.
  • the shaft 200 is provided with a source pipe 211 and a drain pipe 213.
  • the source tube 211 is connected to the source 111 through the source connection hole 117, and the drain tube 213 is connected to the drain 113 through the drain connection hole 119.
  • the first flow path 115 is folded in a shape having a corner in the folded portions 115-1 and 115-2, but is not limited to this shape.
  • the first flow path 115 may be folded back in a curved shape (R shape) at the folded portions 115-1 and 115-2.
  • the shape of the first channel 115 in a top view is not limited to the shape illustrated in FIG. 1, and may have another shape.
  • the first flow path 115 may be spiral.
  • the source 111 may be provided near the center of the plate unit 100, and the drain 113 may be provided near the outer periphery of the plate unit 100.
  • FIG. 2 illustrates the structure in which the first flow path 115 is formed by the flat upper surface of the first base material 110 and the recesses on the lower surface of the second base material 120, but is not limited to this structure.
  • a recess may be provided on the upper surface of the first base material 110, and the lower surface of the second base material 120 may be flat.
  • the recessed part may be provided in both the upper surface of the 1st base material 110, and the lower surface of the 2nd base material 120.
  • the first flow path 115 may be provided inside the second base material 120. When the flow path is provided inside the second base material 120, the first base material 110 can be omitted.
  • the present invention is not limited to this structure.
  • the heating element 140 may be embedded in the first insulating layer 150.
  • FIG. 2 illustrates the structure in which the second base 120 and the heat insulation layer 130 are in contact with each other, other layers may be disposed between the second base 120 and the heat insulation layer 130.
  • the pattern may be formed in the other layer, and the pattern may not be formed.
  • FIG. 2 the structure in which the heat insulating layer 130 and the first insulating layer 150 are in contact with each other is illustrated, but another layer may be disposed between the heat insulating layer 130 and the first insulating layer 150. .
  • a metal substrate or a semiconductor substrate can be used as the first substrate 110 and the second substrate 120.
  • a metal substrate an aluminum (Al) substrate, a titanium (Ti) substrate, or the like can be used.
  • the thermal conductivity of the substrate is about 236 W / mK for Al, about 21.9 W / mK for Ti, about 168 W / mK for Si, about 100 W / mK for SiC, and about 168 W / mK for GaN. is there.
  • the first base material 110 and the second base material 120 may be the same material or different materials.
  • the thermal conductivity of the first base material 110 and the second base material 120 is preferably 100 W / mK or more.
  • Al is used as the first base material 110 and the second base material 120.
  • the heat insulating layer 130 may have a lower thermal conductivity than at least the second base material 120. Further, the heat insulating layer 130 may have a lower thermal conductivity than the first base material 110. The heat insulating layer 130 may have a lower thermal conductivity than at least the first insulating layer 150. Further, the heat insulating layer 130 may have a lower thermal conductivity than the second insulating layer 160.
  • the thermal conductivity of the heat insulating layer 130 is designed so that the temperature of the upper surface (the surface of the second insulating layer 160) of the heater unit 10 reaches 100 ° C.
  • the heat conductivity of the heat insulation layer 130 can be 21 W / mK or less.
  • the heat insulation layer 130 As the heat insulating layer 130, SUS, silicon oxide (SiO 2 ), silicon nitride (SiN), or the like can be used.
  • the heat insulation layer 130 should just be a material whose heat conductivity is lower than the 2nd base material 120, and can be suitably selected according to the heat conductivity of the material used for the 2nd base material 120.
  • the thermal conductivity of the above materials is about 16.7 W / mK for SUS, about 1.4 W / mK for SiO 2 , and about 20.0 W / mK for SiN.
  • the heat insulation layer 130 should just be a material whose heat conductivity is lower than the 1st insulating layer 150, and can be suitably selected according to the heat conductivity of the material used for the 1st insulating layer 150.
  • SUS is used as the heat insulating layer 130.
  • the thickness of the SUS can be 1 mm or more and 10 mm or less.
  • the heat insulation layer 130 may have a pore.
  • the heat insulating layer 130 may be a porous material.
  • the heat insulating layer 130 having a pore content of 1% to 20% can be used.
  • the pore content of the heat insulating layer 130 is 10% or more and 20% or less.
  • the thermal conductivity of porous SUS becomes smaller than the above value (SUS bulk characteristic value).
  • the thermal conductivity of porous SUS is 2 W / mK or more and 17 W / mK or less.
  • said heat conductivity is a value in the case of 25 degreeC measured by the laser flash method.
  • the heat insulating layer 130 is required to have adhesion. Specifically, the adhesiveness that does not peel is required in a cycle test in which room temperature and 150 ° C. are alternately repeated. Further, the heat insulating layer 130 is required to have resistance to the process of forming the heating element 140, the first insulating layer 150, and the second insulating layer 160.
  • Porous SUS can be formed by, for example, a cold spray method.
  • the cold spray method is a method of forming a film by colliding with a base material in a solid state in supersonic flow with an inert gas without melting or gasifying the material.
  • in order to adjust the thickness of SUS after forming SUS by the cold spray method, it was thinned to a desired thickness by grinding.
  • a porous SUS layer as described above can be realized.
  • the formation conditions of the cold spray method the content of pores in the porous SUS layer can be adjusted.
  • SUS may be formed by a method other than the cold spray method.
  • SUS formed by the cold spray method has high adhesion strength, and for example, adhesion strength higher than that of an aluminum substrate can be obtained. Further, SUS can be easily thickened by a cold spray method.
  • SUS was formed using a cold spray method to form a porous SUS, but in addition to the cold spray method, plasma spraying, flame spraying, arc spraying, high-speed flame spraying (HVOF: High Velocity Oxygen Fuel, Alternatively, it can be formed by a method such as HVAF: High Velocity Air Fuel) or warm spray.
  • HVOF High Velocity Oxygen Fuel
  • HVAF High Velocity Air Fuel
  • the heating element 140 a conductor that generates Joule heat by an electric current can be used.
  • a refractory metal such as tungsten (W), tantalum (Ta), molybdenum (Mo), or platinum (Pt) can be used.
  • the heating element 140 may be an alloy containing iron (Fe), chromium (Cr), and Al, an alloy containing nickel (Ni) and Cr, SiC, molybdenum silicide, and carbon.
  • a non-metallic body such as (C) can be used.
  • W is used as the heating element 140.
  • the 1st insulating layer 150 and the 2nd insulating layer 160 are arrange
  • the first insulating layer 150 and the second insulating layer 160 Al 2 O 3 , aluminum nitride (AlN), SiO 2 , SiN, or the like can be used.
  • the thermal conductivity of Al 2 O 3 is about 30.0 W / mK
  • the thermal conductivity of AlN is about 285 W / mK.
  • the first insulating layer 150 and the second insulating layer 160 may be made of the same material or different materials. In the present embodiment, Al 2 O 3 is used as the first insulating layer 150 and the second insulating layer 160.
  • the heat insulating layer 130 having a lower thermal conductivity than the second base material 120 is disposed between the heating element 140 and the second base material 120. Therefore, when heating by the heating element 140 is performed while flowing the cooling water through the first flow path 115, it is possible to prevent a part of the heat generated in the heating element 140 from being taken away by the cooling water. As a result, it is possible to prevent the in-plane uniformity of the heating temperature of the heater unit 10 from being affected by the position of the first flow path 115. In addition, the ultimate temperature due to heating of the heater unit 10 can be made higher than in the prior art.
  • the heat insulating layer 130 having a low thermal conductivity can be realized at a low cost by a simple method. Moreover, the heat insulation of the heat insulation layer 130 can be improved more because the thickness of SUS shall be 1 mm or more and 10 mm or less. Further, since the heat insulating layer 130 has pores of 1% or more and 20% or less, it is possible to realize a thermal conductivity that is lower than the original heat conductivity of the material used for the heat insulating layer 130.
  • the thermal conductivity of the heat insulating layer 130 is lower than the thermal conductivity of the first insulating layer 150, it is possible to further suppress deprivation of part of the heat generated in the heating element 140 by the cooling water.
  • the thermal conductivity of the 2nd base material 120 is 100 W / mK or more, and it can make the in-plane uniformity and ultimate temperature of the heating temperature of the heater unit 10, and a cooling function compatible.
  • the heater unit according to the second embodiment of the present invention has a heating mechanism and a cooling mechanism as in the first embodiment.
  • the heater unit according to the second embodiment can be used for a CVD apparatus, a sputtering apparatus, a vapor deposition apparatus, an etching apparatus, a plasma processing apparatus, a measurement apparatus, an inspection apparatus, a microscope, and the like.
  • the heater unit according to the first embodiment is not limited to the one used in the above apparatus, and can be used for an apparatus that needs to heat or cool the substrate.
  • FIG. 3 is a cross-sectional view of a heater unit according to an embodiment of the present invention.
  • the heater unit 20 is different from the heater unit 10 in that it includes a third base material 410, a fourth base material 420, and a thermal diffusion layer 430.
  • the third base material 410 and the fourth base material 420 are disposed between the second base material 120 and the heat insulating layer 130. Between the third base material 410 and the fourth base material 420, a second flow path 415 serving as a cooling gas or process gas flow path is provided.
  • the 2nd flow path 415 is formed by joining the 3rd base material 410 with which the upper surface is flat, and the 4th base material 420 with which the lower surface was provided with the recessed part.
  • the thermal diffusion layer 430 is disposed above the second insulating layer 160.
  • a part of the second flow path 415 is provided in the shaft 200 via a connection hole provided in the third base material 410, the second base material 120, and the first base material 110. Connected to the gas pipe.
  • the present invention is not limited to this structure.
  • a recess may be provided on the upper surface of the third base material 410, and the lower surface of the fourth base material 420 may be flat.
  • the recessed part may be provided in both the upper surface of the 3rd base material 410, and the lower surface of the 4th base material 420.
  • the second flow path 415 may be provided inside the fourth base material 420.
  • the third base material 410 can be omitted.
  • the third base material 410 and the fourth base material 420 a metal base material or a semiconductor base material can be used.
  • a metal substrate an Al substrate, a Ti substrate, or the like can be used.
  • a semiconductor substrate a Si substrate, a SiC substrate, a GaN substrate, or the like can be used.
  • the third base material 410 and the fourth base material 420 may be the same material or different materials.
  • the third base material 410 and the fourth base material 420 may be the same material as the first base material 110 and the second base material 120 or may be different materials.
  • Al base materials are used as the third base material 410 and the fourth base material 420.
  • the thermal diffusion layer 430 may have a higher thermal conductivity than at least the second insulating layer 160. Further, the thermal diffusion layer 430 may have a higher thermal conductivity than the first insulating layer 150. As the thermal diffusion layer 430, a material having high thermal conductivity such as Al, copper (Cu), silver (Ag), or gold (Au) can be used.
  • the heat diffusion layer 430 is provided above the heating element 140, so that the heat generated by the heating element 140 is in the surface direction of the heat diffusion layer 430. Diffused. As a result, the in-plane uniformity of the heating temperature of the heater unit 20 is improved. Moreover, the ultimate temperature by heating of the heater unit 20 can be made higher than before.
  • the heater unit 20 when the heater unit 20 is heated, a heating gas is caused to flow through the second flow path 415 provided between the first flow path 115 and the heat insulating layer 130, so that the heating element is generated by the cooling water flowing through the first flow path 115. Deprivation of a part of the heat generated in 140 can be suppressed. Therefore, it is possible to obtain the same effect (improvement of in-plane uniformity and higher reachable temperature) as described above.
  • the cooling efficiency when the heater unit 20 is cooled, the cooling efficiency can be improved by flowing the cooling gas through the second flow path 415.
  • Example 1 of the present invention will be specifically described with reference to FIGS. 4 and 5.
  • Example 1 the result of investigating the relationship between the thickness of the heat insulating layer 130 or the ultimate temperature of the heater unit surface with respect to the thermal conductivity will be described.
  • the present invention is not limited to the first embodiment.
  • FIG. 4 is a diagram showing the relationship between the thickness of the heat insulating layer and the temperature reached on the stage surface in the heater unit according to one embodiment of the present invention.
  • FIG. 5 is a diagram showing the relationship between the thermal conductivity of the heat insulating layer and the ultimate temperature of the stage surface in the heater unit according to one embodiment of the present invention.
  • the results shown in FIGS. 4 and 5 are simulation results obtained by calculation.
  • the analysis model used for the calculation will be described below.
  • the analysis model structure is designed assuming the structure shown in FIG. 2, and is a structure in which a cooling channel, an Al layer, a heat insulating layer, a heating element, and an Al 2 O 3 layer are stacked in order from the bottom.
  • the above structure is referred to as a heater unit.
  • the interface of each layer is completely bonded.
  • the uppermost Al 2 O 3 layer was in contact with the atmosphere set at 20 ° C., and the surface emissivity was set to 0.5.
  • W characteristic value: 20 ° C.
  • the boundary condition between the cooling flow path and the Al layer was set to 20 ° C.
  • Al layer, for the Al 2 O 3 layer was adopted bulk property value. Using the above analysis model, the temperature reached on the surface of the Al 2 O 3 layer was obtained by calculation.
  • the thermal conductivity of the heat insulation layer was fixed at 17 W / mK, and the thickness of the heat insulation layer was changed.
  • the heat conductivity of the heat insulating layer was changed by fixing the thickness of the heat insulating layer to 1 mm.
  • the ultimate temperature required for the heater unit is required to be 100 ° C. or higher in order to evaporate water adhering to the surface of the substrate.
  • the result of FIG. 4 shows that the thickness of the heat insulation layer needs to be at least 1.57 mm or more (when the heat conductivity of the heat insulation layer is 17 W / mK).
  • the heat conductivity of a heat insulation layer needs to be at least 25 W / mK or less (when the thickness of a heat insulation layer is 1 mm).
  • Example 1 for example, in order to make the ultimate temperature of the heater unit 100 ° C. or higher, a thickness of 1.57 mm or more is necessary when the thermal conductivity of the heat insulating layer is 17 W / mK. It turned out to be. Moreover, in order to achieve said ultimate temperature, when the thickness of the heat insulation layer was 1 mm, it became clear that it was necessary to make heat conductivity 25 W / mK or less.
  • FIGS. 6A to 6C are diagrams showing electron microscopic images of the heat insulating layer in the heater unit according to one embodiment of the present invention.
  • 6A to 6C show electron microscope images of three types of SUS formed by the cold spray method under different conditions.
  • a bright place (bright part 610) is SUS
  • a dark place (dark part 620) is a pore.
  • FIGS. 6A to 6C it was confirmed that pores having a size of several tens of ⁇ m to several hundreds of ⁇ m were formed in the SUS formed by the cold spray method.
  • the abundance ratio of the pores with respect to the electron microscope images of FIGS. 6A to 6C is about 16.3% for the SUS of FIG. 6A, about 11.8% for the SUS of FIG. 6B, and about 12.6 for the SUS of FIG. %.
  • Example 2 it was found that SUS has pores, so that a lower thermal conductivity can be obtained compared to the bulk properties of SUS. In addition, since SUS has pores, the interface stress between the second base material 120 and the heat insulating layer 130 or the interface stress between the heat insulating layer 130 and the first insulating layer 150 can be relieved. it can.
  • Heater unit 100 Plate portion 110: First base material 111: Source 113: Drain 115: First flow path 115-1, 115-2: Folded portion 117: Source connection hole 119: Drain connection hole 120: 2nd base material 130: heat insulation layer 140: heating element 150: 1st insulating layer 160: 2nd insulating layer 200: shaft part 211: source pipe 213: drain pipe 310: base material 320: heater part 410: 3rd base material 415: 2nd flow path 420: 4th base material 430: Thermal diffusion layer

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

La présente invention concerne un dispositif de fabrication d'un semi-conducteur avec lequel une grande uniformité de température dans un plan est obtenue. Une unité de chauffage comprend : un substrat ayant un canal de refroidissement ; une partie de chauffage disposée au-dessus du substrat, la partie de chauffage ayant un corps générateur de chaleur ; et une couche d'isolation thermique disposée entre le substrat et la partie de chauffage. Dans cet agencement, la conductivité thermique de la couche d'isolation thermique peut être inférieure à la conductivité thermique du substrat. La couche d'isolation thermique peut être un SUS poreux. L'unité de chauffage comprend également un élément isolant qui couvre le corps générateur de chaleur, et la conductivité thermique de la couche d'isolation thermique peut être inférieure à la conductivité thermique de l'élément isolant.
PCT/JP2016/069973 2015-08-07 2016-07-06 Unité de chauffage WO2017026206A1 (fr)

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JP2015156629A JP6653535B2 (ja) 2015-08-07 2015-08-07 ヒータユニット
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JP6997863B2 (ja) * 2018-10-30 2022-01-18 株式会社アルバック 真空処理装置
JP7213080B2 (ja) * 2018-12-19 2023-01-26 東京エレクトロン株式会社 載置台
WO2022225240A1 (fr) * 2021-04-22 2022-10-27 (주)래트론 Élément chauffant flexible et système de chauffage faisant appel à celui-ci
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