WO2017024685A1 - Surface contact rectifying diode - Google Patents
Surface contact rectifying diode Download PDFInfo
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- WO2017024685A1 WO2017024685A1 PCT/CN2015/095042 CN2015095042W WO2017024685A1 WO 2017024685 A1 WO2017024685 A1 WO 2017024685A1 CN 2015095042 W CN2015095042 W CN 2015095042W WO 2017024685 A1 WO2017024685 A1 WO 2017024685A1
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- WO
- WIPO (PCT)
- Prior art keywords
- alloy layer
- junction
- silicon
- lead
- surface contact
- Prior art date
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- 239000010410 layer Substances 0.000 claims abstract description 18
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000012790 adhesive layer Substances 0.000 claims abstract description 5
- 229910000570 Cupronickel Inorganic materials 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 8
- AJZRPMVVFWWBIW-UHFFFAOYSA-N [Au].[Bi] Chemical compound [Au].[Bi] AJZRPMVVFWWBIW-UHFFFAOYSA-N 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 2
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 3
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 abstract 3
- 239000002140 antimony alloy Substances 0.000 abstract 3
- 238000003466 welding Methods 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- NDNKRACDDKGFIP-UHFFFAOYSA-N gold niobium Chemical compound [Nb].[Nb].[Nb].[Au] NDNKRACDDKGFIP-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
Definitions
- the invention relates to a surface contact type rectifier diode and belongs to the technical field of semiconductors.
- Diode is one of the most commonly used electronic components. Its biggest characteristic is unidirectional conduction, that is, current can only flow from one direction of the diode.
- the function of the diode is rectifier circuit, detection circuit, voltage regulator circuit, various modulation circuits. It is mainly composed of diodes. The principle is very simple. It is because of the invention of diodes and other components that we have the birth of our colorful electronic information world.
- the surface contact type rectifier diode of the present invention comprises an anode lead (1), a cathode lead (2), an aluminum alloy electrode (3), a PN junction (4), a silicon N-type crystal (5), and a gold-bismuth alloy layer (6).
- the anode lead (1) is connected to the aluminum alloy electrode (3), the aluminum alloy electrode (3) is connected to the PN junction (4), and the PN junction (4) and the silicon
- the N-type crystal (5) is connected, the silicon N-type crystal (5) is connected to the gold-bismuth alloy layer (6), and the gold-bismuth alloy layer (6) is attached to the support (7), the cathode
- the lead (2) is also attached to the holder (7), and the outside of the anode lead (1) and the cathode lead (2) are sequentially coated with an adhesive layer (8) and a copper-nickel alloy layer (9).
- a positioning block (10) is disposed on the anode lead (1) and the cathode lead (2).
- FIG. 1 is a schematic view showing the structure of a surface contact type rectifier diode of the present invention.
- 1 is an anode lead
- 2 is a cathode lead
- 3 is an aluminum alloy electrode
- 4 is a PN junction
- 5 is a silicon N-type crystal
- 6 is a gold-niobium alloy layer
- 7 is a stent
- 8 is an adhesive layer
- 9 is copper.
- Nickel alloy layer, 10 is a positioning block.
- the surface contact type rectifier diode of the present invention comprises an anode lead (1), a cathode lead (2), an aluminum alloy electrode (3), a PN junction (4), a silicon N-type crystal (5), and gold.
- a tantalum alloy layer (6) and a support (7) the anode lead (1) is connected to an aluminum alloy electrode (3), and the aluminum alloy electrode (3) is connected to a PN junction (4), the PN The junction (4) is connected to the silicon N-type crystal (5), the silicon N-type crystal (5) is connected to the gold-bismuth alloy layer (6), and the gold-bismuth alloy layer (6) is attached to the support (7).
- the cathode lead (2) is also connected to the bracket (7), and the outer side of the anode lead (1) and the cathode lead (2) are sequentially coated with an adhesive layer (8) and a copper-nickel alloy layer ( 9).
- a positioning block (10) is disposed on the anode lead (1) and the cathode lead (2).
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Provided is a surface contact rectifying diode, comprising an anode lead (1), a cathode lead (2), an aluminium alloy electrode (3), a PN junction (4), a silicon N type crystal (5), a gold-antimony alloy layer (6) and a bracket (7), wherein the anode lead (1) is connected to the aluminium alloy electrode (3); the aluminium alloy electrode (3) is connected to the PN junction (4); the PN junction (4) is connected to the silicon N type crystal (5); the silicon N type crystal (5) is connected to the gold-antimony alloy layer (6); the gold-antimony alloy layer (6) is connected to the bracket (7); the cathode lead (2) is also connected to the bracket (7); and the outsides of the anode lead (1) and the cathode lead (2) are coated with an adhesive layer (8) and a copper-nickel alloy layer (9) in sequence. The surface contact rectifying diode has the following technical effects: 1) the pin is not easily bent or fractured; and 2) the pin is not easily inserted too deeply during embedding, and unstable welding is avoided.
Description
本发明涉及一种面接触型整流二极管，属于半导体技术领域。The invention relates to a surface contact type rectifier diode and belongs to the technical field of semiconductors.
二极管是最常用的电子元件之一，它最大的特性就是单向导电，也就是电流只可以从二极管的一个方向流过，二极管的作用有整流电路，检波电路，稳压电路，各种调制电路，主要都是由二极管来构成的，其原理都很简单，正是由于二极管等元件的发明，才有我们现在丰富多彩的电子信息世界的诞生。Diode is one of the most commonly used electronic components. Its biggest characteristic is unidirectional conduction, that is, current can only flow from one direction of the diode. The function of the diode is rectifier circuit, detection circuit, voltage regulator circuit, various modulation circuits. It is mainly composed of diodes. The principle is very simple. It is because of the invention of diodes and other components that we have the birth of our colorful electronic information world.
现有的二极管存在如下不足之处：Existing diodes have the following deficiencies:
1)引脚容易被折弯或折断；1) The pin is easily bent or broken;
2)引脚在镶嵌时容易插入过深，导致焊接不稳固。2) The pin is easily inserted too deeply during the setting, resulting in unstable soldering.
这些不足之处都严重影响了二极管的使用寿命。These shortcomings have seriously affected the service life of the diode.
发明内容Summary of the invention
本发明的目的是克服现有技术的不足之处，提供一种面接触型整流二极管。SUMMARY OF THE INVENTION It is an object of the present invention to overcome the deficiencies of the prior art and to provide a surface contact type rectifier diode.
本发明的面接触型整流二极管，包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7)，所述的阳极引线(1)与铝合金电极(3)相连，所述的铝合金电极(3)与PN结(4)相连，所述的PN结(4)与硅N型晶体(5)相连，所述的硅N型晶体(5)与金锑合金层(6)相连，所述的金锑合金层(6)连在支架(7)上，所述的阴极引线(2)也连在支架(7)上，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。The surface contact type rectifier diode of the present invention comprises an anode lead (1), a cathode lead (2), an aluminum alloy electrode (3), a PN junction (4), a silicon N-type crystal (5), and a gold-bismuth alloy layer (6). And the support (7), the anode lead (1) is connected to the aluminum alloy electrode (3), the aluminum alloy electrode (3) is connected to the PN junction (4), and the PN junction (4) and the silicon The N-type crystal (5) is connected, the silicon N-type crystal (5) is connected to the gold-bismuth alloy layer (6), and the gold-bismuth alloy layer (6) is attached to the support (7), the cathode The lead (2) is also attached to the holder (7), and the outside of the anode lead (1) and the cathode lead (2) are sequentially coated with an adhesive layer (8) and a copper-nickel alloy layer (9).
优选地，Preferably,
所述的阳极引线(1)和阴极引线(2)上设有定位块(10)。A positioning block (10) is disposed on the anode lead (1) and the cathode lead (2).
本发明的面接触型整流二极管具有如下技术效果：The surface contact type rectifier diode of the present invention has the following technical effects:
1)引脚不容易被折弯或折断；
1) The pin is not easily bent or broken;
2)引脚在镶嵌时不容易插入过深，不会导致焊接不稳固。2) The pins are not easily inserted too deeply during the setting, and the soldering is not stable.
图1是本发明的面接触型整流二极管的结构示意图。1 is a schematic view showing the structure of a surface contact type rectifier diode of the present invention.
其中，1为阳极引线，2为阴极引线，3为铝合金电极，4为PN结，5为硅N型晶体，6为金锑合金层，7为支架，8为胶粘层，9为铜镍合金层，10为定位块。Wherein, 1 is an anode lead, 2 is a cathode lead, 3 is an aluminum alloy electrode, 4 is a PN junction, 5 is a silicon N-type crystal, 6 is a gold-niobium alloy layer, 7 is a stent, 8 is an adhesive layer, and 9 is copper. Nickel alloy layer, 10 is a positioning block.
如图1所示，本发明的面接触型整流二极管，包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7)，所述的阳极引线(1)与铝合金电极(3)相连，所述的铝合金电极(3)与PN结(4)相连，所述的PN结(4)与硅N型晶体(5)相连，所述的硅N型晶体(5)与金锑合金层(6)相连，所述的金锑合金层(6)连在支架(7)上，所述的阴极引线(2)也连在支架(7)上，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。所述的阳极引线(1)和阴极引线(2)上设有定位块(10)。
As shown in FIG. 1, the surface contact type rectifier diode of the present invention comprises an anode lead (1), a cathode lead (2), an aluminum alloy electrode (3), a PN junction (4), a silicon N-type crystal (5), and gold. a tantalum alloy layer (6) and a support (7), the anode lead (1) is connected to an aluminum alloy electrode (3), and the aluminum alloy electrode (3) is connected to a PN junction (4), the PN The junction (4) is connected to the silicon N-type crystal (5), the silicon N-type crystal (5) is connected to the gold-bismuth alloy layer (6), and the gold-bismuth alloy layer (6) is attached to the support (7). The cathode lead (2) is also connected to the bracket (7), and the outer side of the anode lead (1) and the cathode lead (2) are sequentially coated with an adhesive layer (8) and a copper-nickel alloy layer ( 9). A positioning block (10) is disposed on the anode lead (1) and the cathode lead (2).
Claims (2)
- 一种面接触型整流二极管，包括阳极引线(1)、阴极引线(2)、铝合金电极(3)、PN结(4)、硅N型晶体(5)、金锑合金层(6)和支架(7)，所述的阳极引线(1)与铝合金电极(3)相连，所述的铝合金电极(3)与PN结(4)相连，所述的PN结(4)与硅N型晶体(5)相连，所述的硅N型晶体(5)与金锑合金层(6)相连，所述的金锑合金层(6)连在支架(7)上，所述的阴极引线(2)也连在支架(7)上，其特征在于，所述的阳极引线(1)和阴极引线(2)的外部依次覆有胶粘层(8)和铜镍合金层(9)。A surface contact type rectifier diode comprising an anode lead (1), a cathode lead (2), an aluminum alloy electrode (3), a PN junction (4), a silicon N-type crystal (5), a gold-bismuth alloy layer (6), and a support (7), the anode lead (1) is connected to an aluminum alloy electrode (3), the aluminum alloy electrode (3) is connected to a PN junction (4), and the PN junction (4) and silicon N The type crystal (5) is connected, the silicon N type crystal (5) is connected to the gold bismuth alloy layer (6), and the gold bismuth alloy layer (6) is attached to the bracket (7), the cathode lead (2) Also attached to the holder (7), characterized in that the outside of the anode lead (1) and the cathode lead (2) are sequentially coated with an adhesive layer (8) and a copper-nickel alloy layer (9).
- 根据权利要求1所述的面接触型整流二极管，其特征在于，所述的阳极引线(1)和阴极引线(2)上设有定位块(10)。 The surface contact type rectifier diode according to claim 1, wherein said anode lead (1) and said cathode lead (2) are provided with positioning blocks (10).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510478994.2 | 2015-08-07 | ||
| CN201510478994.2A CN105023954A (en) | 2015-08-07 | 2015-08-07 | Surface contact rectifying diode |
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| Publication Number | Publication Date |
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| WO2017024685A1 true WO2017024685A1 (en) | 2017-02-16 |
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| PCT/CN2015/095042 WO2017024685A1 (en) | 2015-08-07 | 2015-11-19 | Surface contact rectifying diode |
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| WO (1) | WO2017024685A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
| CN107623045A (en) * | 2017-09-30 | 2018-01-23 | 绍兴上虞欧菲光电科技有限公司 | A kind of diode |
| CN112582280B (en) * | 2020-12-10 | 2021-07-30 | 深圳市冠禹半导体有限公司 | Preparation device of semiconductor device |
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| CN102446977A (en) * | 2010-12-23 | 2012-05-09 | 南通星河电子有限公司 | Axial commutation diode |
| CN203503695U (en) * | 2013-09-27 | 2014-03-26 | 长兴科迪光电有限公司 | Novel structure of direct inserting LED |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60240147A (en) * | 1984-05-14 | 1985-11-29 | Nec Corp | Semiconductor device |
| CN202094127U (en) * | 2011-05-31 | 2011-12-28 | 常州佳讯光电产业发展有限公司 | Novel diode with triangular crystal grain |
| CN104218072A (en) * | 2014-09-30 | 2014-12-17 | 夏洪贵 | Surface contact type diode |
| CN204927299U (en) * | 2015-08-07 | 2015-12-30 | 南通明芯微电子有限公司 | Face contact type rectifier diode |
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2015
- 2015-08-07 CN CN201510478994.2A patent/CN105023954A/en active Pending
- 2015-11-19 WO PCT/CN2015/095042 patent/WO2017024685A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1194463A (en) * | 1997-03-25 | 1998-09-30 | 三星航空产业株式会社 | Semiconductor lead frame with multilayer plated layer and its producing method |
| CN102446977A (en) * | 2010-12-23 | 2012-05-09 | 南通星河电子有限公司 | Axial commutation diode |
| CN203503695U (en) * | 2013-09-27 | 2014-03-26 | 长兴科迪光电有限公司 | Novel structure of direct inserting LED |
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
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| CN105023954A (en) | 2015-11-04 |
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