WO2017059619A1 - Micro surface-mount rectification semiconductor device - Google Patents

Micro surface-mount rectification semiconductor device Download PDF

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Publication number
WO2017059619A1
WO2017059619A1 PCT/CN2015/094594 CN2015094594W WO2017059619A1 WO 2017059619 A1 WO2017059619 A1 WO 2017059619A1 CN 2015094594 W CN2015094594 W CN 2015094594W WO 2017059619 A1 WO2017059619 A1 WO 2017059619A1
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Prior art keywords
metal substrate
connecting piece
negative
metal
electrically connected
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PCT/CN2015/094594
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French (fr)
Chinese (zh)
Inventor
张雄杰
何洪运
程琳
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苏州固锝电子股份有限公司
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Publication of WO2017059619A1 publication Critical patent/WO2017059619A1/en

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    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L23/49575—Assemblies of semiconductor devices on lead frames
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a rectifying semiconductor device, and more particularly to a micro-mount rectifying semiconductor device.
  • the rectifier is a bridge structure composed of four rectifier diodes, which uses the unidirectional conduction characteristics of the diode to rectify the alternating current. Since the bridge rectifier uses the input sine wave twice as efficiently as the wave rectification, it is the diode half. A significant improvement in wave rectification is widely used in circuits where AC power is converted to DC power.
  • the existing double-row laminated structure rectifier has a simple production process and is easy to operate.
  • the flatness of the support sheets in which each diode die is in contact with each other causes the internal stress state of the product in the production process to be insufficiently stable, and the grain damage or poor contact occurs sometimes.
  • the existing products are four independent diodes (Fig. 1) or plug-in bridge stack products (Fig. 2) or microbridge stack products.
  • Fig. 1 the product has a large thickness and occupies a large space of the PCB board, and is not suitable for reflow soldering.
  • In-line bridge stack products large product thickness, poor heat dissipation performance, not suitable for reflow soldering.
  • the prior art has a large product thickness, occupies a large space of the PCB board, and is not suitable for the miniaturization of the terminal product; the heat dissipation performance of the product is poor, resulting in a large heat generation of the terminal product, which is not conducive to energy saving and environmental protection; Welding, other products on the PCB board need to be reheated when soldering, the entire PCB board needs to be heated twice, which will cause technical problems such as damage to the assembled device.
  • the object of the invention is to provide a micro-mounting rectifying semiconductor device, wherein the surface mount rectifier bridge device has a thin thickness, the heat dissipation path of the chip and the PCB is the shortest, the heat sink is made of metal material, the thermal conductivity is superior, and the heat dissipation of the PCB board itself is fully utilized. Capability, heat sink area and product length x wide area ratio of 50%, the maximum use of PCB cooling capacity.
  • a micro-mount rectifier semiconductor device comprising: first, second, third, fourth diode chips and a negative metal coated by an epoxy package a first and a second metal substrate and an E-shaped metal substrate are respectively fixed on the bottom of the epoxy package and on the left and right sides, and the negative metal strip is located on the first and second metal substrates and the E shape. Between metal substrates;
  • the positive terminal of the first diode chip is electrically connected to the upper surface of the first metal substrate, and the negative terminal of the second diode chip is electrically connected to the upper surface of one end of the E-shaped metal substrate, and the negative terminal of the third diode chip is The upper surface of the other end of the E-shaped metal substrate is electrically connected, and the positive end of the fourth diode chip is electrically connected to the upper surface of the second metal substrate;
  • the two ends of the first connecting piece are respectively electrically connected to the negative end of the first diode chip and the upper surface of the negative metal strip, and the two ends of the second connecting piece are respectively connected with the positive end of the second diode chip and the first metal substrate
  • the upper surface is electrically connected
  • the middle portion of the second connecting piece has a convex portion and the convex portion is separated from the negative metal strip by the epoxy package;
  • the two ends of the third connecting piece are electrically connected to the negative end of the fourth diode chip and the upper surface of the negative metal strip, respectively, and the fourth connection The two ends of the chip are respectively electrically connected to the positive terminal of the third diode chip and the upper surface of the second metal substrate;
  • the first, second, third, and fourth connecting pieces are disposed in parallel in the front-rear direction, and the negative metal strip has a bent portion at a front end between the first metal substrate and the E-shaped metal substrate.
  • the bottom of the bent portion is located at the same horizontal plane as the bottom of each of the first, second metal substrate and the E-shaped metal substrate and both expose the epoxy package;
  • the first metal substrate is used as the AC input end, the bent portion of the negative metal strip is used as the DC negative terminal, and the E-shaped metal substrate is used as the DC positive terminal;
  • the first connecting piece and the third connecting piece are The second connecting piece and the fourth connecting piece are connected to the first and second metal substrates by a second positioning mechanism, and the first positioning mechanism is located at the negative metal strip.
  • a bump on both sides and an indented portion on both sides of the first connecting piece and the end of the third connecting piece, the bump is embedded in the indented portion;
  • the second positioning mechanism is located on the first and second metal substrates The bumps on both sides of the second connecting piece and the indented portions on both sides of the end of the second connecting piece and the fourth connecting piece are embedded in the indented portion.
  • the epoxy package has a thickness of less than 2 mm.
  • the end faces of the first and second metal substrates at the edges of the epoxy package are respectively provided with at least two first lead outer protrusions.
  • the E-shaped metal substrate is provided with four second lead outer protrusions on the end surface at the edge of the epoxy package.
  • the height of the bump is higher than the indentation.
  • the present invention has the following advantages and effects compared with the prior art:
  • the micro-mounting rectifying semiconductor device of the present invention is a double-sided package compared with the existing microbridge stack product, and the invention is single-sidedly packaged in the thickness direction, and the product has a thin thickness, and the thickness is adjusted to be less than 2 mm within 2 mm.
  • the first and second metal substrates and the E-shaped metal substrate which serve as both the heat sink and the electrical terminals, are connected to the chip, and are connected to the PCB when the customer uses the chip.
  • the chip is a heat-generating component, and the heat dissipation path of the chip and the PCB. The shortest, the heat sink is made of metal, and the thermal conductivity is superior.
  • the micro-mounting rectifying semiconductor device of the invention is a surface mount product suitable for soldering in an advanced reflow soldering method.
  • the product uses an original internal structure, and four connecting pieces are bridged across a lead bridge for bridging.
  • the layout makes the distance between the four chips farthest, the four heat generation mutual accumulation effect minimum design and the new pad shape design, the first and second metal substrates and the E-shaped metal substrate adopt the E-type design, the heat sink area and the product
  • the length x wide area ratio is up to 50%, which makes maximum use of the PCB heat dissipation capability.
  • its positioning mechanism consists of the bumps on both sides and the indented parts on both sides of the end of the connecting piece, which greatly improves the installation accuracy and use. Reliability and longevity.
  • Figure 1 is a schematic view showing the structure of a prior art axial type product
  • FIG. 2 is a schematic structural view of a conventional in-line bridge stack
  • FIG. 3 is a schematic structural view of a micro mount rectifying semiconductor device according to the present invention.
  • Figure 4 is a schematic view of the structure of Figure 3 taken from the bottom and rotated;
  • Figure 5 is a schematic cross-sectional view of the A-A of Figure 3;
  • Figure 6 is a schematic cross-sectional view of the B-B of Figure 3;
  • Figure 7 is a schematic structural view of a positioning mechanism of the present invention.
  • Figure 8 is a bottom plan view of Figure 7.
  • Embodiment A micro-mount rectifier semiconductor device comprising: first, second, third, and fourth diode chips 2, 3, 4, 5 and a negative metal strip 6 covered by an epoxy package 1
  • the first and second metal substrates 7 and 8 and the E-shaped metal substrate 9 are respectively fixed on the bottom and the right side of the epoxy package 1 , and the negative metal strip 6 is located on the first and second metals. Between the substrates 7, 8 and the E-shaped metal substrate 9;
  • the positive terminal of the first diode chip 2 is electrically connected to the upper surface of the first metal substrate 7, and the negative terminal of the second diode chip 3 is electrically connected to the upper surface of one end of the E-shaped metal substrate 9, the third diode
  • the negative end of the chip 4 is electrically connected to the upper surface of the other end of the E-shaped metal substrate 9, and the positive end of the fourth diode chip 5 is electrically connected to the upper surface of the second metal substrate 8.
  • the two ends of the first connecting piece 10 are electrically connected to the negative end of the first diode chip 2 and the upper surface of the negative metal strip 6, respectively, and the two ends of the second connecting piece 11 and the positive end of the second diode chip 3 are respectively.
  • the upper surface of the first metal substrate 7 is electrically connected, the middle portion of the second connecting piece 11 has a convex portion 111, and the convex portion 111 is separated from the negative metal strip 6 by the epoxy package 1; It is electrically connected to the negative terminal of the fourth diode chip 5 and the upper surface of the negative metal strip 6, and the two ends of the fourth connecting piece 13 are respectively connected to the positive terminal of the third diode chip 4 and the second metal substrate 8.
  • the first, second, third, and fourth connecting sheets 10, 11, 12, and 13 are disposed in parallel in the front-rear direction, and the negative metal strip 6 is located between the first metal substrate 7 and the E-shaped metal substrate 9.
  • the front end has a bent portion 14, and the bottom of the bent portion 14 is located on the same horizontal plane as the bottoms of the first and second metal substrates 7, 8 and the E-shaped metal substrate 9, and the epoxy package is exposed. 1;
  • the first and second metal substrates 7, 8 are used as an AC input terminal, and the bent portion 14 of the negative electrode metal strip 6 serves as a DC negative electrode.
  • the E-shaped metal substrate 9 is used as a DC positive terminal; the first connecting piece 10, the third connecting piece 12 and the negative metal strip 6 are connected by a first positioning mechanism 17, and the second connecting piece 11
  • the four connecting pieces 13 and the first and second metal substrates 7 and 8 are connected by a second positioning mechanism 18, and the first positioning mechanism 17 is provided with the bumps 19 on both sides of the negative metal strip 6 and the first connecting piece. 10.
  • the indentation portion 20 on both sides of the end of the third connecting piece 12 is embedded in the indented portion 20; the second positioning mechanism 18 is located on each of the first and second metal substrates 7, 8
  • the bumps 19 on both sides and the indentation portions 20 on both sides of the ends of the second connecting piece 11 and the fourth connecting piece 13 are embedded in the indented portion 20.
  • the thickness of the epoxy package 1 is less than 2 mm; the height of the bump 19 is higher than that of the indented portion 20.
  • the end faces of the first and second metal substrates 7, 8 located at the edge of the epoxy package 1 are respectively provided with at least two first lead outer protrusions 15.
  • the E-shaped metal substrate 9 is provided with four second lead outer protrusions 16 at the end face of the epoxy package 1.
  • the product is double-sided packaged with respect to the existing microbridge stack product, and the invention is single-sidedly packaged in the thickness direction, and the product is thin, and the thickness is adjusted to be less than 5 mm to be within 2 mm.
  • the first and second metal substrates and the E-shaped metal substrate which are both heat sinks and electrical terminals, are connected to the chip, and are connected to the PCB when the customer uses the chip.
  • the chip is a heat-generating component, and the heat dissipation path of the chip and the PCB is the shortest.
  • the heat sink is made of metal and has excellent thermal conductivity.
  • the product is a surface mount product suitable for more advanced reflow soldering.
  • the product uses an original internal structure, and four connecting pieces are bridged across a lead bridge for bridging.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Rectifiers (AREA)
  • Led Device Packages (AREA)

Abstract

Provided is a micro surface-mount rectification semiconductor device, comprising: first, second, third and fourth diode chips (2, 3, 4, 5) and a negative pole metal bar (6), which are wrapped by an epoxy packaging body; first and second metal substrates (7, 8) and an E-shaped metal substrate (9) are respectively fixed at the bottom of the epoxy packaging body (1) and located on left and right sides of the epoxy packaging body; the negative pole metal bar (6) is located between the first and second metal substrates (7, 8) and the E-shaped metal substrate (9); first, second, third and fourth connecting pieces (10, 11, 12, 13) are arranged in parallel along the front-back direction; a front end, located between the first metal substrate (7) and the E-shaped metal substrate (9), of the negative pole metal bar (6) is provided with a bending portion (14); the bottom of the bending portion (14) and the bottoms of the first and second metal substrates (7, 8) and the E-shaped metal substrate (9) are located on the same horizontal plane and all protrude out of the epoxy packaging body (1); and the first and third connecting pieces (10, 12) are connected to the negative pole metal bar (6) via a first positioning mechanism (17). Thus, a heat dissipation path of a chip and a PCB is the shortest, a heat dissipation capability of the PCB board itself is fully used, the defect of realizing heat dissipation by means of cross-ventilation in a case of an existing product is avoided, a ratio of a heat dissipation fin area to a length multiplied by width area of the product reaches 50%, and the heat dissipation capability of the PCB is used to the greatest extent.

Description

微型贴装整流半导体器件Miniature mounted rectifier semiconductor device 技术领域Technical field
本发明涉及一种整流半导体器件，尤其涉及一种微型贴装整流半导体器件。The present invention relates to a rectifying semiconductor device, and more particularly to a micro-mount rectifying semiconductor device.
背景技术Background technique
整流器是由四个整流二极管组成的一个桥式结构，它利用二极管的单向导电特性对交流电进行整流，由于桥式整流器对输入正正弦波的利用效率比波整流高一倍，是对二极管半波整流的一种显著改进，故被广泛应用于交流电转换成直流电的电路中。The rectifier is a bridge structure composed of four rectifier diodes, which uses the unidirectional conduction characteristics of the diode to rectify the alternating current. Since the bridge rectifier uses the input sine wave twice as efficiently as the wave rectification, it is the diode half. A significant improvement in wave rectification is widely used in circuits where AC power is converted to DC power.
一方面，现有双列叠片式结构整流器，生产工艺简单，易操作。但是每颗二极管晶粒所在的支撑片平整度互相影响造成生产制程中产品内部应力状况不够稳定，晶粒受损或者接触不良的状况时有发生。另一方面，现有产品为4颗独立的二极管(附图1)或插件式桥堆产品(附图2)或微型桥堆产品。主要存在如下弊端：4颗独立的二极管：产品厚度大，占用PCB板空间较大，不适用回流焊方式焊接。直列式桥堆产品：产品厚度大，散热性能不佳，不适用回流焊方式焊接。微型桥堆产品，无散热片，客户希望产品能有更好的散热性能。综上，现有技术存在产品厚度大，占用PCB板空间较大，不适应终端产品小型化的需求；产品散热性能不佳，造成终端产品发热量大，不利于节能环保；不适用回流焊方式焊接，PCB板上其他产品需要用回流焊方式焊接时整个PCB板需要二次受热，会对已组装的器件带来损害等技术问题。On the one hand, the existing double-row laminated structure rectifier has a simple production process and is easy to operate. However, the flatness of the support sheets in which each diode die is in contact with each other causes the internal stress state of the product in the production process to be insufficiently stable, and the grain damage or poor contact occurs sometimes. On the other hand, the existing products are four independent diodes (Fig. 1) or plug-in bridge stack products (Fig. 2) or microbridge stack products. There are mainly the following drawbacks: 4 independent diodes: the product has a large thickness and occupies a large space of the PCB board, and is not suitable for reflow soldering. In-line bridge stack products: large product thickness, poor heat dissipation performance, not suitable for reflow soldering. Micro bridge stack products, no heat sink, customers hope that the product can have better heat dissipation performance. In summary, the prior art has a large product thickness, occupies a large space of the PCB board, and is not suitable for the miniaturization of the terminal product; the heat dissipation performance of the product is poor, resulting in a large heat generation of the terminal product, which is not conducive to energy saving and environmental protection; Welding, other products on the PCB board need to be reheated when soldering, the entire PCB board needs to be heated twice, which will cause technical problems such as damage to the assembled device.
发明内容Summary of the invention
本发明目的是提供一种微型贴装整流半导体器件，该表面贴装整流桥器件厚度薄，芯片与PCB的散热路径最短，散热片为金属材质，导热系数优越，充分利用了PCB板自身的散热能力，散热片面积与产品长x宽面积比例达50％，最大限度的利用了PCB散热能力。The object of the invention is to provide a micro-mounting rectifying semiconductor device, wherein the surface mount rectifier bridge device has a thin thickness, the heat dissipation path of the chip and the PCB is the shortest, the heat sink is made of metal material, the thermal conductivity is superior, and the heat dissipation of the PCB board itself is fully utilized. Capability, heat sink area and product length x wide area ratio of 50%, the maximum use of PCB cooling capacity.
为达到上述目的，本发明采用的技术方案是：一种微型贴装整流半导体器件，包括：由环氧封装体包覆的第一、第二、第三、第四二极管芯片和负极金属条，所述环氧封装体底部且位于左、右侧分别固定有第一、第二金属基片和E形金属基片，所述负极金属条位于第一、第二金属基片和E形金属基片之间；In order to achieve the above object, the technical solution adopted by the present invention is: a micro-mount rectifier semiconductor device comprising: first, second, third, fourth diode chips and a negative metal coated by an epoxy package a first and a second metal substrate and an E-shaped metal substrate are respectively fixed on the bottom of the epoxy package and on the left and right sides, and the negative metal strip is located on the first and second metal substrates and the E shape. Between metal substrates;
第一二极管芯片的正极端与第一金属基片上表面电连接，第二二极管芯片的负极端与E形金属基片一端上表面电连接，第三二极管芯片的负极端与E形金属基片另一端上表面电连接，第四二极管芯片的正极端与第二金属基片上表面电连接；The positive terminal of the first diode chip is electrically connected to the upper surface of the first metal substrate, and the negative terminal of the second diode chip is electrically connected to the upper surface of one end of the E-shaped metal substrate, and the negative terminal of the third diode chip is The upper surface of the other end of the E-shaped metal substrate is electrically connected, and the positive end of the fourth diode chip is electrically connected to the upper surface of the second metal substrate;
第一连接片两端分别与第一二极管芯片的负极端和负极金属条的上表面电连接，第二连接片两端分别与第二二极管芯片的正极端和第一金属基片的上表面电连接，第二连接片中部具有凸起部且该凸起部与负极金属条通过环氧封装体隔离；The two ends of the first connecting piece are respectively electrically connected to the negative end of the first diode chip and the upper surface of the negative metal strip, and the two ends of the second connecting piece are respectively connected with the positive end of the second diode chip and the first metal substrate The upper surface is electrically connected, the middle portion of the second connecting piece has a convex portion and the convex portion is separated from the negative metal strip by the epoxy package;
第三连接片两端分别与第四二极管芯片的负极端和负极金属条的上表面电连接，第四连接 片两端分别与第三二极管芯片的正极端和第二金属基片的上表面电连接；The two ends of the third connecting piece are electrically connected to the negative end of the fourth diode chip and the upper surface of the negative metal strip, respectively, and the fourth connection The two ends of the chip are respectively electrically connected to the positive terminal of the third diode chip and the upper surface of the second metal substrate;
所述第一、第二、第三、第四连接片沿前后方向平行设置，所述负极金属条位于第一金属基片和E形金属基片之间的前端具有一折弯部，此折弯部底部与第一、第二金属基片和E形金属基片各自的底部位于同一水平面且均裸露出所述环氧封装体；The first, second, third, and fourth connecting pieces are disposed in parallel in the front-rear direction, and the negative metal strip has a bent portion at a front end between the first metal substrate and the E-shaped metal substrate. The bottom of the bent portion is located at the same horizontal plane as the bottom of each of the first, second metal substrate and the E-shaped metal substrate and both expose the epoxy package;
第一、第二金属基片作为交流输入端，所述负极金属条的折弯部作为直流负极端，所述E形金属基片作为直流正极端；所述第一连接片、第三连接片与负极金属条通过第一定位机构连接，所述第二连接片、第四连接片与第一、第二金属基片均通过第二定位机构连接，所述第一定位机构由位于负极金属条两侧的凸点和位于第一连接片、第三连接片末端的两侧的内陷部组成，此凸点嵌入内陷部内；所述第二定位机构由位于第一、第二金属基片各自两侧的凸点和位于第二连接片、第四连接片末端的两侧的内陷部组成，此凸点嵌入内陷部内。The first metal substrate is used as the AC input end, the bent portion of the negative metal strip is used as the DC negative terminal, and the E-shaped metal substrate is used as the DC positive terminal; the first connecting piece and the third connecting piece are The second connecting piece and the fourth connecting piece are connected to the first and second metal substrates by a second positioning mechanism, and the first positioning mechanism is located at the negative metal strip. a bump on both sides and an indented portion on both sides of the first connecting piece and the end of the third connecting piece, the bump is embedded in the indented portion; the second positioning mechanism is located on the first and second metal substrates The bumps on both sides of the second connecting piece and the indented portions on both sides of the end of the second connecting piece and the fourth connecting piece are embedded in the indented portion.
上述技术方案中进一步改进的方案如下：The solution for further improvement in the above technical solution is as follows:
1.上述方案中，所述环氧封装体的厚度小于2mm。1. In the above solution, the epoxy package has a thickness of less than 2 mm.
2.上述方案中，所述第一、第二金属基片位于环氧封装体边缘处的端面分别设置有至少2个第一引脚外凸部。2. In the above solution, the end faces of the first and second metal substrates at the edges of the epoxy package are respectively provided with at least two first lead outer protrusions.
3.上述方案中，所述E形金属基片位于环氧封装体边缘处的端面设置有4个第二引脚外凸部。3. In the above solution, the E-shaped metal substrate is provided with four second lead outer protrusions on the end surface at the edge of the epoxy package.
4.上述方案中，所述凸点的高度高于内陷部。4. In the above solution, the height of the bump is higher than the indentation.
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：Due to the application of the above technical solutions, the present invention has the following advantages and effects compared with the prior art:
1.本发明微型贴装整流半导体器件，其相对现有微型桥堆产品为双面封装，本发明在厚度方向上单面封装，该产品厚度薄，将厚度有5mm以上调整为在2mm以内，既作为散热片又同时作为电气端子的第一、第二金属基片和E形金属基片，上面与芯片连接，下面与客户使用时的PCB连接，芯片为发热部件，芯片与PCB的散热路径最短，散热片为金属材质，导热系数优越，充分利用了PCB板自身的散热能力，避免了现有产品的通过机箱内的空气对流散热，芯片发热要通过环氧才能传导到外界空气中，环氧导热能力差等缺陷。1. The micro-mounting rectifying semiconductor device of the present invention is a double-sided package compared with the existing microbridge stack product, and the invention is single-sidedly packaged in the thickness direction, and the product has a thin thickness, and the thickness is adjusted to be less than 2 mm within 2 mm. The first and second metal substrates and the E-shaped metal substrate, which serve as both the heat sink and the electrical terminals, are connected to the chip, and are connected to the PCB when the customer uses the chip. The chip is a heat-generating component, and the heat dissipation path of the chip and the PCB. The shortest, the heat sink is made of metal, and the thermal conductivity is superior. It fully utilizes the heat dissipation capability of the PCB itself, avoiding the convection heat dissipation of the existing products through the chassis. The heat of the chip is transmitted to the outside air through the epoxy. Defects such as poor thermal conductivity of oxygen.
2.本发明微型贴装整流半导体器件，其该产品为表面贴装产品，适用于较先进的回流焊方式焊接，该产品使用独创的内部结构，四颗连接片跨过一颗引线桥接实现桥接，该布局使得4颗芯片间距最远，四颗发热相互累积效应最低设计和全新焊盘外形设计，第一、第二金属基片和E形金属基片采用E型设计，散热片面积与产品长x宽面积比例达50％，最大限度的利用了PCB散热能力；其次，其定位机构由位于两侧的凸点和连接片末端的两侧的内陷部组成，大大提高了安装精度和使用中的可靠性和寿命。2. The micro-mounting rectifying semiconductor device of the invention is a surface mount product suitable for soldering in an advanced reflow soldering method. The product uses an original internal structure, and four connecting pieces are bridged across a lead bridge for bridging. The layout makes the distance between the four chips farthest, the four heat generation mutual accumulation effect minimum design and the new pad shape design, the first and second metal substrates and the E-shaped metal substrate adopt the E-type design, the heat sink area and the product The length x wide area ratio is up to 50%, which makes maximum use of the PCB heat dissipation capability. Secondly, its positioning mechanism consists of the bumps on both sides and the indented parts on both sides of the end of the connecting piece, which greatly improves the installation accuracy and use. Reliability and longevity.
附图说明 DRAWINGS
附图1为现有轴向型产品结构示意图；Figure 1 is a schematic view showing the structure of a prior art axial type product;
附图2为现有直列式桥堆结构示意图；2 is a schematic structural view of a conventional in-line bridge stack;
附图3为本发明微型贴装整流半导体器件结构示意图；3 is a schematic structural view of a micro mount rectifying semiconductor device according to the present invention;
附图4为附图3的仰视且旋转后的结构示意图；Figure 4 is a schematic view of the structure of Figure 3 taken from the bottom and rotated;
附图5为附图3的A-A剖面结构示意图；Figure 5 is a schematic cross-sectional view of the A-A of Figure 3;
附图6为附图3的B-B剖面结构示意图；Figure 6 is a schematic cross-sectional view of the B-B of Figure 3;
附图7为本发明定位机构结构示意图；Figure 7 is a schematic structural view of a positioning mechanism of the present invention;
附图8为附图7的仰视结构示意图。Figure 8 is a bottom plan view of Figure 7.
以上附图中：1、环氧封装体；2、第一二极管芯片；3、第二二极管芯片；4、第三二极管芯片；5、第四二极管芯片；6、负极金属条；7、第一金属基片；8、第二金属基片；9、E形金属基片；10、第一连接片；11、第二连接片；111、凸起部；12、第三连接片；13、第四连接片；14、折弯部；15、第一引脚外凸部；16、第二引脚外凸部；17、第一定位机构；18、第二定位机构；19、凸点；20、内陷部。In the above drawings: 1, an epoxy package; 2, a first diode chip; 3, a second diode chip; 4, a third diode chip; 5, a fourth diode chip; a negative metal strip; 7, a first metal substrate; 8, a second metal substrate; 9, an E-shaped metal substrate; 10, a first connecting piece; 11, a second connecting piece; 111, a raised portion; a third connecting piece; 13, a fourth connecting piece; 14, a bent portion; 15, a first lead outer convex portion; 16, a second lead outer convex portion; 17, a first positioning mechanism; Institution; 19, bump; 20, inset.
具体实施方式detailed description
下面结合附图及实施例对本发明作进一步描述：The present invention is further described below in conjunction with the accompanying drawings and embodiments:
实施例：一种微型贴装整流半导体器件，包括：由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5和负极金属条6，所述环氧封装体1底部且位于左、右侧分别固定有第一、第二金属基片7、8和E形金属基片9，所述负极金属条6位于第一、第二金属基片7、8和E形金属基片9之间；Embodiment: A micro-mount rectifier semiconductor device comprising: first, second, third, and fourth diode chips 2, 3, 4, 5 and a negative metal strip 6 covered by an epoxy package 1 The first and second metal substrates 7 and 8 and the E-shaped metal substrate 9 are respectively fixed on the bottom and the right side of the epoxy package 1 , and the negative metal strip 6 is located on the first and second metals. Between the substrates 7, 8 and the E-shaped metal substrate 9;
第一二极管芯片2的正极端与第一金属基片7上表面电连接，第二二极管芯片3的负极端与E形金属基片9一端上表面电连接，第三二极管芯片4的负极端与E形金属基片9另一端上表面电连接，第四二极管芯片5的正极端与第二金属基片8上表面电连接；The positive terminal of the first diode chip 2 is electrically connected to the upper surface of the first metal substrate 7, and the negative terminal of the second diode chip 3 is electrically connected to the upper surface of one end of the E-shaped metal substrate 9, the third diode The negative end of the chip 4 is electrically connected to the upper surface of the other end of the E-shaped metal substrate 9, and the positive end of the fourth diode chip 5 is electrically connected to the upper surface of the second metal substrate 8.
第一连接片10两端分别与第一二极管芯片2的负极端和负极金属条6的上表面电连接，第二连接片11两端分别与第二二极管芯片3的正极端和第一金属基片7的上表面电连接，第二连接片11中部具有凸起部111且该凸起部111与负极金属条6通过环氧封装体1隔离；第三连接片12两端分别与第四二极管芯片5的负极端和负极金属条6的上表面电连接，第四连接片13两端分别与第三二极管芯片4的正极端和第二金属基片8的上表面电连接；The two ends of the first connecting piece 10 are electrically connected to the negative end of the first diode chip 2 and the upper surface of the negative metal strip 6, respectively, and the two ends of the second connecting piece 11 and the positive end of the second diode chip 3 are respectively The upper surface of the first metal substrate 7 is electrically connected, the middle portion of the second connecting piece 11 has a convex portion 111, and the convex portion 111 is separated from the negative metal strip 6 by the epoxy package 1; It is electrically connected to the negative terminal of the fourth diode chip 5 and the upper surface of the negative metal strip 6, and the two ends of the fourth connecting piece 13 are respectively connected to the positive terminal of the third diode chip 4 and the second metal substrate 8. Surface electrical connection;
所述第一、第二、第三、第四连接片10、11、12、13沿前后方向平行设置，所述负极金属条6位于第一金属基片7和E形金属基片9之间的前端具有一折弯部14，此折弯部14底部与第一、第二金属基片7、8和E形金属基片9各自的底部位于同一水平面且均裸露出所述环氧封装体1；The first, second, third, and fourth connecting sheets 10, 11, 12, and 13 are disposed in parallel in the front-rear direction, and the negative metal strip 6 is located between the first metal substrate 7 and the E-shaped metal substrate 9. The front end has a bent portion 14, and the bottom of the bent portion 14 is located on the same horizontal plane as the bottoms of the first and second metal substrates 7, 8 and the E-shaped metal substrate 9, and the epoxy package is exposed. 1;
第一、第二金属基片7、8作为交流输入端，所述负极金属条6的折弯部14作为直流负极 端，所述E形金属基片9作为直流正极端；所述第一连接片10、第三连接片12与负极金属条6通过第一定位机构17连接，所述第二连接片11、第四连接片13与第一、第二金属基片7、8均通过第二定位机构18连接，所述第一定位机构17由位于负极金属条6两侧的凸点19和位于第一连接片10、第三连接片12末端的两侧的内陷部20组成，此凸点19嵌入内陷部20内；所述第二定位机构18由位于第一、第二金属基片7、8各自两侧的凸点19和位于第二连接片11、第四连接片13末端的两侧的内陷部20组成，此凸点19嵌入内陷部20内。The first and second metal substrates 7, 8 are used as an AC input terminal, and the bent portion 14 of the negative electrode metal strip 6 serves as a DC negative electrode. The E-shaped metal substrate 9 is used as a DC positive terminal; the first connecting piece 10, the third connecting piece 12 and the negative metal strip 6 are connected by a first positioning mechanism 17, and the second connecting piece 11 The four connecting pieces 13 and the first and second metal substrates 7 and 8 are connected by a second positioning mechanism 18, and the first positioning mechanism 17 is provided with the bumps 19 on both sides of the negative metal strip 6 and the first connecting piece. 10. The indentation portion 20 on both sides of the end of the third connecting piece 12 is embedded in the indented portion 20; the second positioning mechanism 18 is located on each of the first and second metal substrates 7, 8 The bumps 19 on both sides and the indentation portions 20 on both sides of the ends of the second connecting piece 11 and the fourth connecting piece 13 are embedded in the indented portion 20.
上述环氧封装体1的厚度小于2mm；上述凸点19的高度高于内陷部20。The thickness of the epoxy package 1 is less than 2 mm; the height of the bump 19 is higher than that of the indented portion 20.
上述第一、第二金属基片7、8位于环氧封装体1边缘处的端面分别设置有至少2个第一引脚外凸部15。The end faces of the first and second metal substrates 7, 8 located at the edge of the epoxy package 1 are respectively provided with at least two first lead outer protrusions 15.
上述E形金属基片9位于环氧封装体1边缘处的端面设置有4个第二引脚外凸部16。The E-shaped metal substrate 9 is provided with four second lead outer protrusions 16 at the end face of the epoxy package 1.
采用上述微型贴装整流半导体器件时，其相对现有微型桥堆产品为双面封装，本发明在厚度方向上单面封装，该产品厚度薄，将厚度有5mm以上调整为在2mm以内，既作为散热片又同时作为电气端子的第一、第二金属基片和E形金属基片，上面与芯片连接，下面与客户使用时的PCB连接，芯片为发热部件，芯片与PCB的散热路径最短，散热片为金属材质，导热系数优越，充分利用了PCB板自身的散热能力，避免了现有产品的通过机箱内的空气对流散热，芯片发热要通过环氧才能传导到外界空气中，环氧导热能力差等缺陷；其次，其该产品为表面贴装产品，适用于较先进的回流焊方式焊接，该产品使用独创的内部结构，四颗连接片跨过一颗引线桥接实现桥接，该布局使得4颗芯片间距最远，四颗发热相互累积效应最低设计和全新焊盘外形设计，第一、第二金属基片和E形金属基片采用E型设计，散热片面积与产品长x宽面积比例达50％，最大限度的利用了PCB散热能力；再次，其定位机构由位于两侧的凸点和连接片末端的两侧的内陷部组成，大大提高了安装精度和使用中的可靠性和寿命。When the above-mentioned micro-mounting rectifying semiconductor device is used, the product is double-sided packaged with respect to the existing microbridge stack product, and the invention is single-sidedly packaged in the thickness direction, and the product is thin, and the thickness is adjusted to be less than 5 mm to be within 2 mm. The first and second metal substrates and the E-shaped metal substrate, which are both heat sinks and electrical terminals, are connected to the chip, and are connected to the PCB when the customer uses the chip. The chip is a heat-generating component, and the heat dissipation path of the chip and the PCB is the shortest. The heat sink is made of metal and has excellent thermal conductivity. It fully utilizes the heat dissipation capability of the PCB itself, avoiding the convection heat dissipation of the existing products through the chassis. The heat of the chip is transmitted to the outside air through the epoxy, and the epoxy Defects such as poor thermal conductivity; secondly, the product is a surface mount product suitable for more advanced reflow soldering. The product uses an original internal structure, and four connecting pieces are bridged across a lead bridge for bridging. Make the 4 chips the farthest distance, the four heat accumulation mutual effect minimum design and the new pad shape design, the first and second metal base E-shaped metal substrate and E-shaped design, the heat sink area and product length x wide area ratio of 50%, the maximum use of PCB heat dissipation; again, its positioning mechanism by the bumps on both sides and the end of the tab The intrusion on both sides of the composition greatly improves the installation accuracy and reliability and life in use.
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。 The above embodiments are merely illustrative of the technical concept and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the present invention and to implement the present invention, and the scope of the present invention is not limited thereto. Equivalent variations or modifications made in accordance with the spirit of the invention are intended to be included within the scope of the invention.

Claims (5)

  1. 一种微型贴装整流半导体器件，其特征在于：包括：由环氧封装体(1)包覆的第一、第二、第三、第四二极管芯片(2、3、4、5)和负极金属条(6)，所述环氧封装体(1)底部且位于左、右侧分别固定有第一、第二金属基片(7、8)和E形金属基片(9)，所述负极金属条(6)位于第一、第二金属基片(7、8)和E形金属基片(9)之间；A micro-mount rectifier semiconductor device, comprising: first, second, third, and fourth diode chips (2, 3, 4, 5) covered by an epoxy package (1) And a metal strip (6) of the negative electrode, wherein the first and second metal substrates (7, 8) and the E-shaped metal substrate (9) are respectively fixed at the bottom of the epoxy package (1) and on the left and right sides, respectively. The negative metal strip (6) is located between the first and second metal substrates (7, 8) and the E-shaped metal substrate (9);
    第一二极管芯片(2)的正极端与第一金属基片(7)上表面电连接，第二二极管芯片(3)的负极端与E形金属基片(9)一端上表面电连接，第三二极管芯片(4)的负极端与E形金属基片(9)另一端上表面电连接，第四二极管芯片(5)的正极端与第二金属基片(8)上表面电连接；The positive terminal of the first diode chip (2) is electrically connected to the upper surface of the first metal substrate (7), and the negative terminal of the second diode chip (3) and the upper surface of one end of the E-shaped metal substrate (9) Electrically connected, the negative terminal of the third diode chip (4) is electrically connected to the upper surface of the other end of the E-shaped metal substrate (9), and the positive terminal of the fourth diode chip (5) and the second metal substrate ( 8) electrical connection of the upper surface;
    第一连接片(10)两端分别与第一二极管芯片(2)的负极端和负极金属条(6)的上表面电连接，第二连接片(11)两端分别与第二二极管芯片(3)的正极端和第一金属基片(7)的上表面电连接，第二连接片(11)中部具有凸起部(111)且该凸起部(111)与负极金属条(6)通过环氧封装体(1)隔离；The two ends of the first connecting piece (10) are respectively electrically connected to the negative end of the first diode chip (2) and the upper surface of the negative metal strip (6), and the two ends of the second connecting piece (11) are respectively second and second The positive terminal of the pole tube chip (3) is electrically connected to the upper surface of the first metal substrate (7), the middle portion of the second connecting piece (11) has a convex portion (111) and the convex portion (111) and the negative electrode metal Strip (6) is isolated by epoxy package (1);
    第三连接片(12)两端分别与第四二极管芯片(5)的负极端和负极金属条(6)的上表面电连接，第四连接片(13)两端分别与第三二极管芯片(4)的正极端和第二金属基片(8)的上表面电连接；The two ends of the third connecting piece (12) are respectively electrically connected to the negative end of the fourth diode chip (5) and the upper surface of the negative metal strip (6), and the two ends of the fourth connecting piece (13) are respectively respectively connected with the third two The positive terminal of the pole tube chip (4) is electrically connected to the upper surface of the second metal substrate (8);
    所述第一、第二、第三、第四连接片(10、11、12、13)沿前后方向平行设置，所述负极金属条(6)位于第一金属基片(7)和E形金属基片(9)之间的前端具有一折弯部(14)，此折弯部(14)底部与第一、第二金属基片(7、8)和E形金属基片(9)各自的底部位于同一水平面且均裸露出所述环氧封装体(1)；The first, second, third, and fourth connecting pieces (10, 11, 12, 13) are disposed in parallel in the front-rear direction, and the negative metal strip (6) is located on the first metal substrate (7) and the E shape The front end between the metal substrates (9) has a bent portion (14), the bottom of the bent portion (14) and the first and second metal substrates (7, 8) and the E-shaped metal substrate (9) The bottom of each is at the same level and both exposed the epoxy package (1);
    第一、第二金属基片(7、8)作为交流输入端，所述负极金属条(6)的折弯部(14)作为直流负极端，所述E形金属基片(9)作为直流正极端；所述第一连接片(10)、第三连接片(12)与负极金属条(6)通过第一定位机构(17)连接，所述第二连接片(11)、第四连接片(13)与第一、第二金属基片(7、8)均通过第二定位机构(18)连接，所述第一定位机构(17)由位于负极金属条(6)两侧的凸点(19)和位于第一连接片(10)、第三连接片(12)末端的两侧的内陷部(20)组成，此凸点(19)嵌入内陷部(20)内；所述第二定位机构(18)由位于第一、第二金属基片(7、8)各自两侧的凸点(19)和位于第二连接片(11)、第四连接片(13)末端的两侧的内陷部(20)组成，此凸点(19)嵌入内陷部(20)内。The first and second metal substrates (7, 8) serve as alternating current input ends, the bent portion (14) of the negative metal strip (6) serves as a direct current negative terminal, and the E-shaped metal substrate (9) serves as a direct current. The first connecting piece (10), the third connecting piece (12) and the negative metal strip (6) are connected by a first positioning mechanism (17), the second connecting piece (11), the fourth connection The sheet (13) and the first and second metal substrates (7, 8) are both connected by a second positioning mechanism (18), and the first positioning mechanism (17) is convex by the two sides of the negative metal strip (6). Point (19) and an indentation portion (20) on both sides of the end of the first connecting piece (10) and the third connecting piece (12), the convex point (19) is embedded in the indented portion (20); The second positioning mechanism (18) is provided with bumps (19) on both sides of the first and second metal substrates (7, 8) and at the ends of the second connecting piece (11) and the fourth connecting piece (13). The indentation (20) on both sides is formed, and the bump (19) is embedded in the indentation (20).
  2. 根据权利要求1所述的微型贴装整流半导体器件，其特征在于：所述环氧封装体(1)的厚度小于2mm。A micromount-mounted rectifying semiconductor device according to claim 1, wherein said epoxy package (1) has a thickness of less than 2 mm.
  3. 根据权利要求1所述的微型贴装整流半导体器件，其特征在于：所述第一、第二金属 基片(7、8)位于环氧封装体(1)边缘处的端面分别设置有至少2个第一引脚外凸部(15)。The micro mount rectifying semiconductor device according to claim 1, wherein said first and second metals The end faces of the substrate (7, 8) at the edge of the epoxy package (1) are respectively provided with at least two first lead outer protrusions (15).
  4. 根据权利要求1所述的微型贴装整流半导体器件，其特征在于：所述E形金属基片(9)位于环氧封装体(1)边缘处的端面设置有4个第二引脚外凸部(16)。The micro-mounted rectifying semiconductor device according to claim 1, wherein the E-shaped metal substrate (9) is provided with four second lead protrusions on an end surface of the epoxy package (1). Department (16).
  5. 根据权利要求1所述的微型贴装整流半导体器件，其特征在于：所述凸点(19)的高度高于内陷部(20)。 A micromount-mounted rectifying semiconductor device according to claim 1, wherein said bump (19) has a height higher than that of the depressed portion (20).
PCT/CN2015/094594 2015-10-08 2015-11-13 Micro surface-mount rectification semiconductor device WO2017059619A1 (en)

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