WO2017161669A1 - Heat-radiation-fin-structured ultrathin surface-mounted rectifier bridge device - Google Patents
Heat-radiation-fin-structured ultrathin surface-mounted rectifier bridge device Download PDFInfo
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- WO2017161669A1 WO2017161669A1 PCT/CN2016/083131 CN2016083131W WO2017161669A1 WO 2017161669 A1 WO2017161669 A1 WO 2017161669A1 CN 2016083131 W CN2016083131 W CN 2016083131W WO 2017161669 A1 WO2017161669 A1 WO 2017161669A1
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- the two ends of the first connecting piece are soldered between the negative end of the second diode chip and the positive end of the first diode chip, and the two ends of the second connecting piece are bridged to the third diode chip by soldering. Between the negative terminal and the positive terminal of the fourth diode chip;
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Abstract
A heat-radiation-fin-structured ultrathin surface-mounted rectifier bridge device comprises a first diode chip, a second diode chip, a third diode chip, a fourth diode chip (2, 3, 4, 5), a first metal strip (10) and a second metal strip (11) that are packaged by an epoxy packaging member (1). Two ends of a first connecting piece (8) are bridged between a cathode end of the second diode chip (3) and an anode end of the first diode chip (2) through welding. Two ends of a second connecting piece (9) are bridged between a cathode end of the third diode chip (4) and an anode end of the fourth diode chip (5) through welding. One end of the first metal strip in the epoxy packaging member is electrically connected with the middle part of the first connecting piece. One end of the second metal strip in the epoxy packaging member is electrically connected with the middle part of the second connecting piece. The other end of the first metal strip and the other end of the second metal strip extend out of one side of the epoxy packaging member and are respectively used as a first AC input end and a second AC input end. The rectifier bridge device sufficiently utilizes the heat radiation capability of PCB itself. The heat-radiation-fin-structured ultrathin surface-mounted rectifier bridge device has a heat radiation fin structure and has advantages of high instant heat radiation capability and high forward surge capability.
Description
本发明涉及一种整流半导体器件，尤其涉及一种散热片结构超薄型表面贴装整流桥器件。The present invention relates to a rectifying semiconductor device, and more particularly to an ultra-thin surface mount rectifier bridge device having a heat sink structure.
整流器是由四个整流二极管组成的一个桥式结构，它利用二极管的单向导电特性对交流电进行整流，由于桥式整流器对输入正正弦波的利用效率比波整流高一倍，是对二极管半波整流的一种显著改进，故被广泛应用于交流电转换成直流电的电路中。The rectifier is a bridge structure composed of four rectifier diodes, which uses the unidirectional conduction characteristics of the diode to rectify the alternating current. Since the bridge rectifier uses the input sine wave twice as efficiently as the wave rectification, it is the diode half. A significant improvement in wave rectification is widely used in circuits where AC power is converted to DC power.
现有同类桥堆产品主要存在如下弊端：产品厚度尺寸较大，极限厚度通常在1.4mm以上；产品无散热片结构，不能充分利用PCB的散热能力；产品的瞬时散热能力较差，正向浪涌能力较低；现有产品生产工艺陈旧，对手工作业依赖程度高。现有产品存在如下问题点：(1)产品厚度大，不能适应客户端产品日益小型化智能化设计的需求；(2)产品散热能力较差，不利于客户端产品的节能设计；(3)现有封装产品的瞬时散热能力较差，正向浪涌能力较低；(4)现有产品生产工艺陈旧，对手工作业依赖程度高。Existing similar bridge pile products mainly have the following drawbacks: the product thickness is large, the limit thickness is usually above 1.4mm; the product has no heat sink structure, can not fully utilize the heat dissipation capability of the PCB; the product has poor instantaneous heat dissipation capability, positive wave The ability to surge is low; the existing production process is outdated and relies heavily on manual work. The existing products have the following problems: (1) The product has a large thickness and cannot meet the needs of increasingly miniaturized and intelligent design of the client products; (2) The product has poor heat dissipation capability, which is not conducive to the energy-saving design of the client products; (3) The existing packaged products have poor instantaneous heat dissipation capability and low forward surge capability; (4) existing products have an old production process and are highly dependent on manual operations.
发明内容Summary of the invention
本发明目的是提供一种散热片结构超薄型表面贴装整流桥器件，该超薄型表面贴装整流桥器件小于1.2mm，充分利用了PCB板自身的散热能力，该产品为散热片结构，产品瞬时散热能力好，正向浪涌能力强。The object of the present invention is to provide an ultra-thin surface mount rectifier bridge device with a heat sink structure. The ultra-thin surface mount rectifier bridge device is less than 1.2 mm, which fully utilizes the heat dissipation capability of the PCB board itself, and the product is a heat sink structure. The product has good instantaneous heat dissipation capability and strong forward surge capability.
为达到上述目的，本发明采用的技术方案是：一种散热片结构超薄型表面贴装整流桥器件，包括：由环氧封装体包覆的第一、第二、第三、第四二极管芯片、第一金属条和第二金属条；In order to achieve the above object, the technical solution adopted by the present invention is: a heat sink structure ultra-thin surface mount rectifier bridge device, comprising: first, second, third, fourth and fourth coated by an epoxy package a pole tube chip, a first metal strip and a second metal strip;
所述第二、第三二极管芯片安装于第一金属基片上表面且位于环氧封装体左侧，所述第一、第四二极管芯片安装于第二金属基片上表面且位于环氧封装体右侧，所述第二、第三二极管芯片各自的正极端与第一金属基片上表面电连接，所述第一、第四二极管芯片各自的负极端与第二金属基片上表面电连接；The second and third diode chips are mounted on the upper surface of the first metal substrate and located on the left side of the epoxy package, and the first and fourth diode chips are mounted on the upper surface of the second metal substrate and located in the ring. On the right side of the oxygen package, the positive ends of the second and third diode chips are electrically connected to the upper surface of the first metal substrate, and the negative ends of the first and fourth diode chips are respectively connected to the second metal. The upper surface of the substrate is electrically connected;
第一连接片两端通过焊锡跨接于第二二极管芯片的负极端和第一二极管芯片的正极端之间，第二连接片两端通过焊锡跨接于第三二极管芯片的负极端和第四二极管芯片的正极端之间；The two ends of the first connecting piece are soldered between the negative end of the second diode chip and the positive end of the first diode chip, and the two ends of the second connecting piece are bridged to the third diode chip by soldering. Between the negative terminal and the positive terminal of the fourth diode chip;
所述第一金属条和第二金属条位于环氧封装体中间且在第二、第三二极管芯片与第一、第四二极管芯片之间，第一金属条位于环氧封装体内的一端与第一连接片中部电连接，第二金属条位于环氧封装体内的一端与第二连接片中部电连接；The first metal strip and the second metal strip are located in the middle of the epoxy package and between the second and third diode chips and the first and fourth diode chips, and the first metal strip is located in the epoxy package One end is electrically connected to the middle of the first connecting piece, and one end of the second metal strip is located in the epoxy package body and is electrically connected to the middle of the second connecting piece;
第一金属条、第二金属条各自另一端均从环氧封装体一侧延伸出分别作为第一交流输入端
和第二交流输入端，第一金属基片、第二金属基片位于环氧封装体外侧的一端从环氧封装体内延伸出分别作为直流负极端和直流正极端；所述第一金属基片、第二金属基片各自的下表面从环氧封装体内裸露出。The other ends of the first metal strip and the second metal strip respectively extend from one side of the epoxy package as the first AC input end
And the second metal input end, the first metal substrate and the second metal substrate are located at an outer side of the epoxy package extending from the epoxy package as a DC negative terminal and a DC positive terminal; respectively; the first metal substrate The lower surface of each of the second metal substrates is exposed from the epoxy package.
上述技术方案中进一步改进的方案如下：The solution for further improvement in the above technical solution is as follows:
1.上述方案中，所述环氧封装体的厚度小于1.4mm，通常小于1.2mm。1. In the above solution, the epoxy package has a thickness of less than 1.4 mm, usually less than 1.2 mm.
2.上述方案中，所述第一金属条、第二金属条、第一金属基片和第二金属基片材质均为铜，且露出环氧封装体的部分表面均镀覆有锡层。2. In the above solution, the first metal strip, the second metal strip, the first metal substrate and the second metal substrate are made of copper, and a part of the surface of the exposed epoxy package is plated with a tin layer.
由于上述技术方案运用，本发明与现有技术相比具有下列优点和效果：Due to the application of the above technical solutions, the present invention has the following advantages and effects compared with the prior art:
本发明散热片结构超薄型表面贴装整流桥器件，相对现有产品厚度通常在1.4mm以上，其该产品厚度薄在1.2mm以内；其次，本发明为散热片结构，充分利用了PCB板自身的散热能力，该产品为散热片结构，产品瞬时散热能力好，正向浪涌能力强；再次，从工艺设计上最大限度的减少了对手工作业的依赖，成倍提升了人工效率。The ultra-thin surface mount rectifier bridge device of the heat sink structure of the present invention generally has a thickness of 1.4 mm or more relative to the existing product, and the thickness of the product is thinner than 1.2 mm. Secondly, the present invention is a heat sink structure and fully utilizes the PCB board. Its own heat dissipation capability, the product is a heat sink structure, the product has good instantaneous heat dissipation capability and strong forward surge capability; again, it minimizes the dependence on manual work from the process design, and doubles the labor efficiency.
附图1为现有整流桥器件结构示意图；1 is a schematic structural view of a conventional rectifier bridge device;
附图2为附图1的仰视结构示意图；Figure 2 is a bottom plan view of Figure 1;
附图3为本发明超薄型表面贴装整流桥器件结构示意图；3 is a schematic structural view of an ultra-thin surface mount rectifier bridge device according to the present invention;
附图4为附图4的后视结构示意图；Figure 4 is a rear perspective view of Figure 4;
附图5为附图3的仰视结构示意图；Figure 5 is a bottom plan view of Figure 3;
附图6为本发明超薄型表面贴装整流桥器件立体结构示意图。6 is a schematic perspective view showing the structure of an ultra-thin surface mount rectifier bridge device of the present invention.
以上附图中：1、环氧封装体；2、第一二极管芯片；3、第二二极管芯片；4、第三二极管芯片；5、第四二极管芯片；6、第一金属基片；7、第二金属基片；8、第一连接片；9、第二连接片；10、第一金属条；11、第二金属条。In the above drawings: 1, an epoxy package; 2, a first diode chip; 3, a second diode chip; 4, a third diode chip; 5, a fourth diode chip; a first metal substrate; 7, a second metal substrate; 8, a first connecting piece; 9, a second connecting piece; 10, a first metal strip; 11, a second metal strip.
下面结合附图及实施例对本发明作进一步描述：The present invention is further described below in conjunction with the accompanying drawings and embodiments:
实施例1：一种散热片结构超薄型表面贴装整流桥器件，包括：由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5、第一金属条和第二金属条；Embodiment 1: A heat sink structure ultra-thin surface mount rectifier bridge device comprising: first, second, third, and fourth diode chips 2, 3, and 4 covered by an epoxy package 1 , 5, a first metal strip and a second metal strip;
所述第二、第三二极管芯片3、4安装于第一金属基片6上表面且位于环氧封装体1左侧，所述第一、第四二极管芯片2、5安装于第二金属基片7上表面且位于环氧封装体1右侧，所述第二、第三二极管芯片3、4各自的正极端与第一金属基片6上表面电连接，所述第一、第四二极管芯片2、5各自的负极端与第二金属基片7上表面电连接；The second and third diode chips 3, 4 are mounted on the upper surface of the first metal substrate 6 and on the left side of the epoxy package 1, and the first and fourth diode chips 2, 5 are mounted on The upper surface of the second metal substrate 7 is located on the right side of the epoxy package 1, and the positive ends of the second and third diode chips 3, 4 are electrically connected to the upper surface of the first metal substrate 6, The negative ends of the first and fourth diode chips 2, 5 are electrically connected to the upper surface of the second metal substrate 7;
第一连接片8两端通过焊锡跨接于第二二极管芯片3的负极端和第一二极管芯片2的正极端之间，第二连接片9两端通过焊锡跨接于第三二极管芯片4的负极端和第四二极管芯片5
的正极端之间；The two ends of the first connecting piece 8 are soldered between the negative end of the second diode chip 3 and the positive end of the first diode chip 2, and the two ends of the second connecting piece 9 are bridged to the third by solder. The negative terminal of the diode chip 4 and the fourth diode chip 5
Between the positive ends;
所述第一金属条和第二金属条位于环氧封装体1中间且在第二、第三二极管芯片3、4与第一、第四二极管芯片2、5之间，第一金属条位于环氧封装体1内的一端与第一连接片中部电连接，第二金属条位于环氧封装体1内的一端与第二连接片中部电连接；The first metal strip and the second metal strip are located in the middle of the epoxy package 1 and between the second and third diode chips 3, 4 and the first and fourth diode chips 2, 5, first One end of the metal strip in the epoxy package 1 is electrically connected to the middle of the first connecting piece, and one end of the second metal strip in the epoxy package 1 is electrically connected to the middle of the second connecting piece;
第一金属条10、第二金属条11各自另一端均从环氧封装体1一侧延伸出分别作为第一交流输入端和第二交流输入端，第一金属基片6、第二金属基片7位于环氧封装体1外侧的一端从环氧封装体1内延伸出分别作为直流负极端和直流正极端；所述第一金属基片6、第二金属基片7各自的下表面从环氧封装体1内裸露出。The other ends of the first metal strip 10 and the second metal strip 11 respectively extend from the side of the epoxy package 1 as a first alternating current input terminal and a second alternating current input terminal, respectively, a first metal substrate 6, and a second metal base. One end of the sheet 7 on the outer side of the epoxy package 1 extends from the epoxy package 1 as a DC negative terminal and a DC positive terminal, respectively; the lower surfaces of the first metal substrate 6 and the second metal substrate 7 are respectively The epoxy package 1 is exposed.
上述环氧封装体1的厚度小于1.4mm，通常小于1.2mm。The epoxy package 1 has a thickness of less than 1.4 mm, and is usually less than 1.2 mm.
实施例2：一种散热片结构超薄型表面贴装整流桥器件，包括：由环氧封装体1包覆的第一、第二、第三、第四二极管芯片2、3、4、5、第一金属条和第二金属条；Embodiment 2: A heat sink structure ultra-thin surface mount rectifier bridge device comprising: first, second, third, and fourth diode chips 2, 3, and 4 covered by an epoxy package 1 , 5, a first metal strip and a second metal strip;
所述第二、第三二极管芯片3、4安装于第一金属基片6上表面且位于环氧封装体1左侧，所述第一、第四二极管芯片2、5安装于第二金属基片7上表面且位于环氧封装体1右侧，所述第二、第三二极管芯片3、4各自的正极端与第一金属基片6上表面电连接，所述第一、第四二极管芯片2、5各自的负极端与第二金属基片7上表面电连接；The second and third diode chips 3, 4 are mounted on the upper surface of the first metal substrate 6 and on the left side of the epoxy package 1, and the first and fourth diode chips 2, 5 are mounted on The upper surface of the second metal substrate 7 is located on the right side of the epoxy package 1, and the positive ends of the second and third diode chips 3, 4 are electrically connected to the upper surface of the first metal substrate 6, The negative ends of the first and fourth diode chips 2, 5 are electrically connected to the upper surface of the second metal substrate 7;
第一连接片8两端通过焊锡跨接于第二二极管芯片3的负极端和第一二极管芯片2的正极端之间，第二连接片9两端通过焊锡跨接于第三二极管芯片4的负极端和第四二极管芯片5的正极端之间；The two ends of the first connecting piece 8 are soldered between the negative end of the second diode chip 3 and the positive end of the first diode chip 2, and the two ends of the second connecting piece 9 are bridged to the third by solder. Between the negative terminal of the diode chip 4 and the positive terminal of the fourth diode chip 5;
所述第一金属条和第二金属条位于环氧封装体1中间且在第二、第三二极管芯片3、4与第一、第四二极管芯片2、5之间，第一金属条位于环氧封装体1内的一端与第一连接片中部电连接，第二金属条位于环氧封装体1内的一端与第二连接片中部电连接；The first metal strip and the second metal strip are located in the middle of the epoxy package 1 and between the second and third diode chips 3, 4 and the first and fourth diode chips 2, 5, first One end of the metal strip in the epoxy package 1 is electrically connected to the middle of the first connecting piece, and one end of the second metal strip in the epoxy package 1 is electrically connected to the middle of the second connecting piece;
第一金属条10、第二金属条11各自另一端均从环氧封装体1一侧延伸出分别作为第一交流输入端和第二交流输入端，第一金属基片6、第二金属基片7位于环氧封装体1外侧的一端从环氧封装体1内延伸出分别作为直流负极端和直流正极端；所述第一金属基片6、第二金属基片7各自的下表面从环氧封装体1内裸露出。The other ends of the first metal strip 10 and the second metal strip 11 respectively extend from the side of the epoxy package 1 as a first alternating current input terminal and a second alternating current input terminal, respectively, a first metal substrate 6, and a second metal base. One end of the sheet 7 on the outer side of the epoxy package 1 extends from the epoxy package 1 as a DC negative terminal and a DC positive terminal, respectively; the lower surfaces of the first metal substrate 6 and the second metal substrate 7 are respectively The epoxy package 1 is exposed.
上述第一金属条10、第二金属条11、第一金属基片6和第二金属基片7材质均为铜，且露出环氧封装体的部分表面均镀覆有锡层。The first metal strip 10, the second metal strip 11, the first metal substrate 6, and the second metal substrate 7 are made of copper, and a portion of the surface of the exposed epoxy package is plated with a tin layer.
采用上述散热片结构超薄型表面贴装整流桥器件时，相对现有产品厚度通常在1.4mm以上，其该产品厚度薄在1.2mm以内；其次，本发明为散热片结构，充分利用了PCB板自身的散热能力，该产品为散热片结构，产品瞬时散热能力好，正向浪涌能力强；再次，从工艺设计上最大限度的减少了对手工作业的依赖，成倍提升了人工效率。When the above-mentioned heat sink structure ultra-thin surface mount rectifier bridge device is used, the thickness of the existing product is usually above 1.4 mm, and the thickness of the product is thinner than 1.2 mm. Secondly, the present invention is a heat sink structure, which fully utilizes the PCB. The heat dissipation capability of the board itself is the heat sink structure. The product has good instantaneous heat dissipation capability and strong forward surge capability. Once again, it relies on the process design to minimize the dependence on manual work and double the labor efficiency.
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士
能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。
The above embodiments are only for explaining the technical idea and features of the present invention, and the purpose thereof is to enable those skilled in the art.
The contents of the present invention can be understood and implemented, and the scope of the present invention is not limited thereby. Equivalent variations or modifications made in accordance with the spirit of the invention are intended to be included within the scope of the invention.
Claims (3)
- 一种散热片结构超薄型表面贴装整流桥器件，其特征在于：包括：由环氧封装体(1)包覆的第一、第二、第三、第四二极管芯片(2、3、4、5)、第一金属条和第二金属条；所述第二、第三二极管芯片(3、4)安装于第一金属基片(6)上表面且位于环氧封装体(1)左侧，所述第一、第四二极管芯片(2、5)安装于第二金属基片(7)上表面且位于环氧封装体(1)右侧，所述第二、第三二极管芯片(3、4)各自的正极端与第一金属基片(6)上表面电连接，所述第一、第四二极管芯片(2、5)各自的负极端与第二金属基片(7)上表面电连接；A heat sink structure ultra-thin surface mount rectifier bridge device, comprising: first, second, third, and fourth diode chips covered by an epoxy package (1) (2) 3, 4, 5), a first metal strip and a second metal strip; the second and third diode chips (3, 4) are mounted on the upper surface of the first metal substrate (6) and located in the epoxy package On the left side of the body (1), the first and fourth diode chips (2, 5) are mounted on the upper surface of the second metal substrate (7) and are located on the right side of the epoxy package (1). 2. The positive terminals of the third diode chips (3, 4) are electrically connected to the upper surface of the first metal substrate (6), and the first and fourth diode chips (2, 5) are each negative. Extremely electrically connected to the upper surface of the second metal substrate (7);第一连接片(8)两端通过焊锡跨接于第二二极管芯片(3)的负极端和第一二极管芯片(2)的正极端之间，第二连接片(9)两端通过焊锡跨接于第三二极管芯片(4)的负极端和第四二极管芯片(5)的正极端之间；The two ends of the first connecting piece (8) are soldered between the negative end of the second diode chip (3) and the positive end of the first diode chip (2), and the second connecting piece (9) The end is bridged between the negative terminal of the third diode chip (4) and the positive terminal of the fourth diode chip (5) by solder;所述第一金属条和第二金属条位于环氧封装体(1)中间且在第二、第三二极管芯片(3、4)与第一、第四二极管芯片(2、5)之间，第一金属条位于环氧封装体(1)内的一端与第一连接片(8)中部电连接，第二金属条位于环氧封装体(1)内的一端与第二连接片(9)中部电连接；The first metal strip and the second metal strip are located in the middle of the epoxy package (1) and in the second and third diode chips (3, 4) and the first and fourth diode chips (2, 5) Between the first metal strips at one end of the epoxy package (1) is electrically connected to the middle of the first connecting piece (8), and the second metal strip is located at one end of the epoxy package (1) and the second connection Piece (9) central electrical connection;第一金属条(10)、第二金属条(11)各自另一端均从环氧封装体(1)一侧延伸出分别作为第一交流输入端和第二交流输入端，第一金属基片(6)、第二金属基片(7)位于环氧封装体(1)外侧的一端从环氧封装体(1)内延伸出分别作为直流负极端和直流正极端；所述第一金属基片(6)、第二金属基片(7)各自的下表面从环氧封装体(1)内裸露出。The other ends of the first metal strip (10) and the second metal strip (11) extend from one side of the epoxy package (1) as a first alternating current input terminal and a second alternating current input terminal, respectively, the first metal substrate (6) a second metal substrate (7) is located at an outer side of the epoxy package (1) extending from the epoxy package (1) as a DC negative terminal and a DC positive terminal; respectively; the first metal base The lower surface of each of the sheet (6) and the second metal substrate (7) is exposed from the inside of the epoxy package (1).
- 根据权利要求1所述的散热片结构超薄型表面贴装整流桥器件，其特征在于：所述环氧封装体(1)的厚度小于1.4mm，通常小于1.2mm。The fin structure ultra-thin surface mount rectifier bridge device according to claim 1, wherein the epoxy package (1) has a thickness of less than 1.4 mm, and is usually less than 1.2 mm.
- 根据权利要求1所述的散热片结构超薄型表面贴装整流桥器件，其特征在于：所述第一金属条(10)、第二金属条(11)、第一金属基片(6)和第二金属基片(7)材质均为铜，且露出环氧封装体的部分表面均镀覆有锡层。 The heat sink structure ultra-thin surface mount rectifier bridge device according to claim 1, wherein the first metal strip (10), the second metal strip (11), and the first metal substrate (6) The second metal substrate (7) is made of copper, and a part of the surface of the exposed epoxy package is plated with a tin layer.
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| CN201610176863.3A CN106449537A (en) | 2016-03-25 | 2016-03-25 | Heat-radiation-fin-structured ultrathin surface-mounted rectifier bridge device |
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| CN201796886U (en) * | 2010-09-08 | 2011-04-13 | 四川太晶微电子有限公司 | Metallized plane rectifier |
| CN102931174A (en) * | 2012-10-30 | 2013-02-13 | 南通康比电子有限公司 | Miniature type surface mounting single-phase full-wave bridge rectifier and manufacturing method of rectifier |
| CN103401438A (en) * | 2013-08-13 | 2013-11-20 | 苏州工业园区凯众通微电子技术有限公司 | Novel surface-mounted bridge-type rectifier and manufacturing method thereof |
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| CN201752002U (en) * | 2010-07-02 | 2011-02-23 | 重庆平伟实业股份有限公司 | Thin type bridge rectifier |
| CN205069633U (en) * | 2015-09-22 | 2016-03-02 | 常州星海电子有限公司 | Ultra -thin high -power rectification bridge type diode |
| CN108807302A (en) * | 2015-10-08 | 2018-11-13 | 苏州固锝电子股份有限公司 | Rectifying bridge type semiconductor devices |
| CN205680671U (en) * | 2016-03-25 | 2016-11-09 | 苏州固锝电子股份有限公司 | Heat radiating fin structure Ultrathin surface-mount rectifier bridge device |
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| CN101373932A (en) * | 2007-08-25 | 2009-02-25 | 绍兴旭昌科技企业有限公司 | Miniature surface-pasted single-phase full wave bridge rectifier and manufacturing method thereof |
| CN201796886U (en) * | 2010-09-08 | 2011-04-13 | 四川太晶微电子有限公司 | Metallized plane rectifier |
| CN102931174A (en) * | 2012-10-30 | 2013-02-13 | 南通康比电子有限公司 | Miniature type surface mounting single-phase full-wave bridge rectifier and manufacturing method of rectifier |
| CN103401438A (en) * | 2013-08-13 | 2013-11-20 | 苏州工业园区凯众通微电子技术有限公司 | Novel surface-mounted bridge-type rectifier and manufacturing method thereof |
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