CN203406326U - A light emitting diode with a special support structure - Google Patents
A light emitting diode with a special support structure Download PDFInfo
- Publication number
- CN203406326U CN203406326U CN201320456319.6U CN201320456319U CN203406326U CN 203406326 U CN203406326 U CN 203406326U CN 201320456319 U CN201320456319 U CN 201320456319U CN 203406326 U CN203406326 U CN 203406326U
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- China
- Prior art keywords
- wafer
- described support
- support
- emittingdiode
- low
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The utility model discloses a light emitting diode with a special support structure. The light emitting diode comprises a wafer and a support for fixing the wafer. An anode bonding pad on the bottom of the wafer contacts an anode sheet on the support and is fixedly connected and communicated with the anode sheet through metallic conducting resin. A cathode bonding pad on the bottom of the wafer contacts a cathode sheet on the support and is fixedly connected and communicated with the cathode sheet through metallic conducting resin. The light emitting diode is characterized in that low-lying portions used for containing surplus downwardly-overflowed metallic conducting resin are disposed on areas on the support, the anode sheet, and the cathode sheet, wherein the areas are opposite to the bottom or the two sides of the wafer. The low-lying portions are disposed on the support structure. When the wafer is fixed on the support by the metallic conducting resin, surplus metallic conducting resin is overflowed downwardly to the low-lying portions. As a result, the surplus metallic conducting resin is prevented from surrounding the wafer and further influencing the light emitting efficiency and the heat dissipating performance of the wafer. Therefore, the service life of the light emitting diode is prolonged and an energy-saving and environment-friendly purpose is achieved.
Description
Technical field
The utility model relates to a kind of light-emittingdiode, relates in particular to a kind of light-emittingdiode with special supporting structure.
Background technology
The manufacture of original light-emittingdiode is sequentially die bond, baking, and welding cathode and anode conductive lead wire, sealing, its manufacturing process is loaded down with trivial details, expend time in.In order to shorten Production Time, reduce production costs, based on original technical deficiency, improve, during current die bond, wafer is fixedly connected with the anode weld pad of wafer bottom surface and negative electrode weld pad and the anode strip of described support and conducting by metallic conduction glue with cathode sheets, without weldering wire, without sealing, reduced cost.But this die bond mode, meeting is too much coated on around wafer because of metallic conduction glue, and then affects luminous efficiency and the heat dispersion of wafer, has shortened the useful life of luminous secondary body.
Summary of the invention
The purpose of this utility model is to provide a kind ofly can receive excess metal conducting resinl, make LED wafer have the light-emittingdiode with special supporting structure of better luminous efficiency and heat dispersion.
For achieving the above object, the utility model provides a kind of light-emittingdiode, the support that comprises wafer and fix this wafer, the anode weld pad of described wafer bottom surface contacts with cathode sheets and is fixedly connected with conducting by metallic conduction glue with the anode strip of described support with negative electrode weld pad, it is characterized in that: described support is provided with for receiving the low-lying portion of the metallic conduction glue of unnecessary underflow with respect to described bottom of wafer or its both sides.
High both sides low structure in the middle of described support has, described crystal and lower anode weld pad and negative electrode weld pad thereof are positioned at high position, described support centre, and described support both sides are formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
The anode strip of described support and cathode sheets are provided with drainage trough with respect to the both sides of described bottom of wafer, and this drainage trough is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
The anode strip of described support and cathode sheets are provided with some perforations to the conduction hole of described support top circuit with respect to described bottom of wafer, and this conduction hole is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
Described support and anode strip thereof and cathode sheets are provided with some perforations to the conduction hole of described frame bottom circuit with respect to described bottom of wafer, and this conduction hole is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
Described frame bottom circuit extends to side or the front of described support.
The contact-making surface of described anode strip and cathode sheets and described anode weld pad and negative electrode weld pad forms Z-Correct bump mapping Z-correct after surface coarsening or patterned etch, and this Z-Correct bump mapping Z-correct is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
The anode strip of described support and cathode sheets are solid metallic.
The utility model arranges low-lying portion on supporting structure, while wafer being fixed on support by metallic conduction glue, unnecessary metallic conduction glue underflow is to low-lying portion, avoid unnecessary metallic conduction glue coating wafer and then affect wafer luminous efficiency and the thermal diffusivity of self around, extend the useful life of light-emittingdiode, reached the object of energy-conserving and environment-protective.
Accompanying drawing explanation
With reference to accompanying drawing, the utility model will be better understood.Accompanying drawing is as follows:
Fig. 1 is the light-emittingdiode the first execution mode profile that the utlity model has special supporting structure;
Fig. 2 is the light-emittingdiode the first execution mode side cut away view that the utlity model has special supporting structure;
Fig. 3 is the light-emittingdiode the second execution mode profile that the utlity model has special supporting structure;
Fig. 4 is the light-emittingdiode the second execution mode support vertical view that the utlity model has special supporting structure;
Fig. 5 is the third execution mode profile of light-emittingdiode that the utlity model has special supporting structure;
Fig. 6 is the third execution mode support vertical view of light-emittingdiode that the utlity model has special supporting structure;
Fig. 7 is the 4th kind of execution mode profile of light-emittingdiode that the utlity model has special supporting structure;
Fig. 8 is the 4th kind of execution mode support vertical view of light-emittingdiode that the utlity model has special supporting structure.
Embodiment
In order to make the purpose of this utility model, technical scheme, beneficial effect clearer, below in conjunction with drawings and Examples, the utility model is described in further details.Should be appreciated that specific embodiment described herein is only for explaining the utility model, and be not used in restriction the utility model.
Below in conjunction with specific embodiment, realization of the present utility model is described in detail:
The light-emittingdiode with special supporting structure of the present utility model, comprise: the support 9 that comprises wafer 1 and fix this wafer 1, the anode weld pad 3 of described wafer 1 bottom surface contacts with cathode sheets 6 and is fixedly connected with conducting by metallic conduction glue 8 with the anode strip 5 of described support 9 with negative electrode weld pad 4, and described support 9 is provided with for receiving the low-lying portion of the metallic conduction glue of unnecessary underflow with respect to described wafer 1 bottom or its both sides.Wafer 1 bottom is provided with reflector layer 2, between the anode weld pad 3 of wafer 1 bottom surface and negative electrode weld pad 4, is provided with insulating barrier 7.The anode strip 5 of support 9 and cathode sheets 6 are solid metallic.
As shown in Figure 1 to Figure 2, the utlity model has the first execution mode of the light-emittingdiode of special supporting structure, the low structure in high both sides in the middle of described support 9 has, described crystal 1 and under anode weld pad 3 and negative electrode weld pad 4 be positioned at high positions in the middle of described support 9, the anode weld pad 3 of crystal 1 bottom and negative electrode weld pad 4 contact with cathode sheets 6 and are fixedly connected with by metallic conduction glue 8 with the anode strip 5 of middle high position, and described support 9 both sides are formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.When wafer 1 is fixed on support 9 by metallic conduction glue, unnecessary metallic conduction glue just can flow to the low-lying depressed part of both sides, avoids unnecessary metallic conduction glue coating wafer.
As shown in Figure 3 to Figure 4, the utlity model has the second execution mode of the light-emittingdiode of special supporting structure, the anode strip 5 of described support 9 and cathode sheets 6 are provided with drainage trough 11 with respect to the both sides of described wafer 1 bottom, and this drainage trough 11 is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.The groove that drainage trough 11 is rectangle, is appreciated that drainage trough 11 can be also circular, oval or other erose grooves, and the concrete shape of groove is unrestricted.
As shown in Figure 5 to Figure 6, the third execution mode that the utlity model has the light-emittingdiode of special supporting structure is, the anode strip 5 of described support 9 and cathode sheets 6 are provided with some perforations to the conduction hole 12 of described support 9 top circuit with respect to described wafer 1 bottom, and this conduction hole 12 is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.Conduction hole 12 can be circular port or the hole of other shapes.In this execution mode, the circuit of described support 9 is laid in the top of described support 9.
As shown in Fig. 7 to Fig. 8, the utlity model has the 4th kind of execution mode of the light-emittingdiode of special supporting structure.The difference of this execution mode and the third execution mode is: the circuit of described support 9 is laid in the bottom of described support 9, described support 9 and anode strip 5 thereof and cathode sheets 6 are provided with some perforations to the conduction hole of described support 9 bottom circuit with respect to described wafer 1 bottom, and this conduction hole is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.Because the circuit of support 9 is laid in support 9 bottoms, so conduction hole need to connect the bottom circuit that support 9 and anode strip 5 and cathode sheets 6 thereof just can be connected to support 9.For the ease of adjusting, the follow-up power circuit of light-emitting diode connects and the cutting processing of many wafer modules, and support 9 bottom circuit extend to side or the front of described support 9.
The anode strip 5 of the utility model support 9 and cathode sheets 6 and described wafer 1 bottom surface anode weld pad 3 and the contact-making surface of negative electrode weld pad 4 after surface coarsening or patterned etch, form Z-Correct bump mapping Z-correct, this Z-Correct bump mapping Z-correct is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (8)
1. a light-emittingdiode with special supporting structure, the support (9) that comprises wafer (1) and fix this wafer (1), the anode weld pad (3) of described wafer (1) bottom surface contacts with cathode sheets (6) and passes through metallic conduction glue (8) with the anode strip (5) of described support (9) with negative electrode weld pad (4) and is fixedly connected with conducting, it is characterized in that: described support (9) is provided with for receiving the low-lying portion of the metallic conduction glue of unnecessary underflow with respect to described wafer (1) bottom or its both sides.
2. the light-emittingdiode with special supporting structure as claimed in claim 1, it is characterized in that: the low structure in high both sides in the middle of described support (9) has, described crystal (1) and under anode weld pad (3) and negative electrode weld pad (4) be positioned at position high in the middle of described support (9), described support (9) both sides are formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
3. the light-emittingdiode with special supporting structure as claimed in claim 1, it is characterized in that: the anode strip (5) of described support (9) and cathode sheets (6) are provided with drainage trough (11) with respect to the both sides of described wafer (1) bottom, this drainage trough (11) is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
4. the light-emittingdiode with special supporting structure as claimed in claim 1, it is characterized in that: the anode strip (5) of described support (9) and cathode sheets (6) are provided with some perforations to the conduction hole of described support (9) top circuit with respect to described wafer (1) bottom, this conduction hole is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
5. the light-emittingdiode with special supporting structure as claimed in claim 1, it is characterized in that: described support (9) and anode strip (5) thereof and cathode sheets (6) are provided with some perforations to the conduction hole of described support (9) bottom circuit with respect to described wafer (1) bottom, this conduction hole is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
6. the light-emittingdiode with special supporting structure as claimed in claim 5, is characterized in that: described support (9) bottom circuit extends to side or the front of described support (9).
7. the light-emittingdiode with special supporting structure as claimed in claim 1, it is characterized in that: the contact-making surface of described anode strip (5) and cathode sheets (6) and described anode weld pad (3) and negative electrode weld pad (4) forms Z-Correct bump mapping Z-correct after surface coarsening or patterned etch, this Z-Correct bump mapping Z-correct is formed for receiving the low-lying portion of the conducting resinl of unnecessary underflow.
8. the light-emittingdiode with special supporting structure as claimed in claim 1, is characterized in that: the anode strip (5) of described support (9) and cathode sheets (6) are solid metallic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320456319.6U CN203406326U (en) | 2013-07-30 | 2013-07-30 | A light emitting diode with a special support structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320456319.6U CN203406326U (en) | 2013-07-30 | 2013-07-30 | A light emitting diode with a special support structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203406326U true CN203406326U (en) | 2014-01-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320456319.6U Expired - Fee Related CN203406326U (en) | 2013-07-30 | 2013-07-30 | A light emitting diode with a special support structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203406326U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538538A (en) * | 2014-12-24 | 2015-04-22 | 广州市鸿利光电股份有限公司 | Flip chip support and LED packaging process |
-
2013
- 2013-07-30 CN CN201320456319.6U patent/CN203406326U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538538A (en) * | 2014-12-24 | 2015-04-22 | 广州市鸿利光电股份有限公司 | Flip chip support and LED packaging process |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140122 Termination date: 20160730 |