CN203859147U - Bracket used for inversely mounting semiconductor device - Google Patents
Bracket used for inversely mounting semiconductor device Download PDFInfo
- Publication number
- CN203859147U CN203859147U CN201420145891.5U CN201420145891U CN203859147U CN 203859147 U CN203859147 U CN 203859147U CN 201420145891 U CN201420145891 U CN 201420145891U CN 203859147 U CN203859147 U CN 203859147U
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- China
- Prior art keywords
- die bond
- electrode pin
- semiconductor device
- hole
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Abstract
The utility model discloses a bracket used for inversely mounting a semiconductor device, which comprises a die bonding platform, a first electrode pin and a second electrode pin, wherein the die bonding platform is used for packaging the semiconductor device and at least provided with a first die bonding portion, a second die bonding portion and a first through hole, the first die bonding portion and the second die bonding portion are provided with a gap therebetween so as to realize electrical isolation, the first electrode pin forms electrical connection with the first die bonding portion, and the second electrode pin penetrates through the first through hole and forms electrical connection with the second die bonding portion. The bracket disclosed by the utility model can realize eutectic, thereby enabling a flip chip to be conductive with the bracket directly, omitting a procedure of wire bonding, effectively improving the yield, and reducing the production cost.
Description
Technical field
The utility model relates to a kind of semiconductor device support, particularly a kind of TO support for upside-down mounting semiconductor device (Transmitter Outline).
Background technology
Light-emitting diode (LED, Light Emitting Diode) owing to having, the life-span is long, the advantage such as low consumes energy, be applied to various fields, especially along with its illumination performance index day by day significantly promotes, the application of LED is more and more extensive, such as for optical display, traffic sign, data memory device, communicator and lighting device etc.
Conventionally, LED chip is fixedly installed on LED support and uses, Fig. 1 has shown a kind of TO(Transmitter Outline of the prior art) support, it comprises die bond platform 13, the first electrode pin 11, the second electrode pin 12, wherein die bond platform 13 is one to have the conductive base of through hole, the first electrode pin 11 is fixed on the below of conductive base by scolder 15, the second electrode pin 12 is positioned at the through hole of pedestal, and realizes electrical isolation by insulating material 14 and die bond platform 13.Please refer to Fig. 2, LED chip 20 is connected on support by die bond, and is connected with first, second electrode pin by wire 30.In aforementioned brackets, very close to each other between die bond platform positive and negative electrode, and on the second electrode pin, corresponding area only has the area of a gold thread, cannot carry out die bond, so this support is only applicable to positive cartridge chip, is not suitable for flip-chip.
Summary of the invention
For foregoing problems, the utility model provides a kind of TO support for flip-chip, and it can realize eutectic directly by flip-chip and support conducting, omits routing procedure and can effectively improve yield and reduce production costs.
A kind of support for upside-down mounting semiconductor device, comprise die bond platform and first, second electrode pin for encapsulated semiconductor device, described die bond platform at least has first, second die bond portion and the first through hole, between described first, second die bond portion, there is a gap to realize electrical isolation, described the first electrode pin and the first die bond portion form and are electrically connected, and described the second electrode pin runs through described the first through hole and described the second die bond portion forms electric connection.
The upper surface flush of described first, second die bond portion, spacing between the two can design according to the gap of the positive and negative electrode of flip-chip, to reach with chip, matches.Preferably, the width in described gap is 40 μ m ~ 400 μ m.
Preferably, the end that described the second electrode pin is positioned at the first through hole one side has a horizontal expansion portion as the second die bond portion.In certain embodiments, described extension is flat, with described the second electrode pin one, for example, the end of the second electrode pin can be flattened, bending extends to forward and in required working region, obtain die bond portion.At some embodiment, also can be directly at the end fire weld metal sheet of the second electrode pin as the second die bond portion.In certain embodiments, described die bond platform also has the second through hole, and described the first electrode pin runs through this through hole and is connected with described the first die bond portion.In certain embodiments, the end that described the first electrode pin is positioned at described the second through hole one side has a horizontal expansion portion as the second die bond portion.
Preferably, described die bond platform is that heat sink material forms, and can be conduction platform or insulated platform.In certain embodiments, described die bond platform is a conductive base, described the first through hole runs through this conductive base, its sidewall has insulating material, described the first electrode pin is formed and is electrically connected by described conductive base and the first die bond portion, described the second electrode pin runs through described through hole and described the second die bond portion forms electric connection, and described the first die bond portion is the arbitrary region of described conductive base except the first hole passes to.In certain embodiments, described die bond platform is an insulating base, and it has first, second through hole that runs through this pedestal, and described the first electrode pin connects by first, second die bond portion of described Kong Tongyu.
Preferably, described die bond platform is circle or regular polygon.
The aforementioned support for upside-down mounting semiconductor device, realizing the direct eutectic of flip-chip is directly connected with electrode pin, reduce on the one hand bonding wire operation, at cost and on the time, reduced greatly, on the other hand, adopt direct eutectic effectively to reduce thermal resistance, luminous efficiency, heat radiation and the life-span of device are greatly improved.
Other features and advantages of the utility model will be set forth in the following description, and, partly from specification, become apparent, or understand by implementing the present invention.The purpose of this utility model and other advantages can be realized and be obtained by specifically noted structure in specification, claims and accompanying drawing.
Accompanying drawing explanation
Accompanying drawing is used to provide further understanding of the present utility model, and forms a part for specification, is used from explanation the utility model with embodiment mono-of the present utility model, does not form restriction of the present utility model.In addition, accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is the structural representation of a kind of TO support of the prior art.
Fig. 2 is for adopting the vertical view of the semiconductor device of support shown in Fig. 1.
Fig. 3 ~ Fig. 5 has shown first embodiment of the present utility model.
Fig. 6 has shown a distortion of first embodiment 1 of the utility model.
Fig. 7 and Fig. 8 have shown second embodiment of the present utility model.
Fig. 9 is a kind of structural representation of flip LED chips.
Embodiment
Below in conjunction with drawings and Examples, describe execution mode of the present utility model in detail, to the utility model, how application technology means solve technical problem whereby, and the implementation procedure of reaching technique effect can fully understand and implement according to this.
embodiment 1
Please refer to Fig. 3 and Fig. 4, a kind of support for upside-down mounting semiconductor device, comprise, comprise: for die bond platform 13, the first electrode pin 11 and second electrode pin 12 of encapsulated semiconductor device, die bond platform 13 is one to have the conductive base of through hole, the first electrode pin 11 is fixed on the below of conductive base by scolder 15, the second electrode pin 12 runs through the through hole of conductive base and realizes electrical isolation by insulating material 14 and conductive base.Conductive base all can be used as the first 13A of die bond portion except through hole area, to in the working region that the second electrode pin 12 ends are flattened, the method such as bending or weld metal sheet extends transverse to die bond platform 13, obtain the second 13B of die bond portion, in this extension, sink into realize electrical isolation in conductive base and by insulating material 14 and conductive base, its upper surface flushes with the top of conductive base.Between the first 13A of die bond portion and the second 13B of die bond portion, there is a clearance D, can design according to the gap of the positive and negative electrode of flip-chip the size of D between gap, to reach with chip, match, its preferably width be 40 μ m ~ 400 μ m, in the present embodiment, D is about 100 μ m.So, the first electrode pin 11 is directly electrically connected conductive base 13, realizes and being connected with the first 13A of die bond portion of die bond platform 13; Second its end of electrode pin 12 horizontal expansions obtains the second 13B of die bond portion, realizes and being connected with the second 13B of die bond portion of die bond platform 13.
Please refer to Fig. 5, flip-chip 20(please refer to Fig. 9) directly die bond on the support shown in Fig. 3, its first, second electrode 21,22 is directly connected with the second die bond portion with the first die bond portion of support die bond platform 13, so can reduce bonding wire operation, at cost and on the time, reduced greatly, and directly eutectic will reduce thermal resistance, and the aspects such as luminous efficiency, heat radiation and life-span of device are greatly improved.
Fig. 6 has shown a distortion of the supporting structure shown in Fig. 3.Please refer to Fig. 6, in this structure, the insulating material below the second crystal bonding area 13A all runs through die bond platform (pedestal) 13, so can guarantee better the electrical isolation between device positive and negative electrode.
embodiment 2
Please refer to Fig. 7 and 8, in the present embodiment, die bond platform is one to have two through hole conductive bases 13, the first electrode pin 11 and the second electrode pin 12 run through respectively different through holes, and protrude from the end face of pedestal 13, will in the working region that two electrode pin ends are flattened, bending extends to forward die bond platform, obtain respectively the first die bond portion 16 and the second die bond portion 17, two die bond portion upper surface flush, between the two, have equally clearance D, its width can design with reference to embodiment 1.Wherein the first electrode pin 11 directly with pedestal electric connection, between the second electrode pin 12 and pedestal, by insulating material 14, realize electrical isolation.
Claims (11)
1. the support for upside-down mounting semiconductor device, comprise die bond platform and first, second electrode pin for encapsulated semiconductor device, described die bond platform at least has first, second die bond portion and the first through hole, between described first, second die bond portion, there is a gap to realize electrical isolation, described the first electrode pin and the first die bond portion form and are electrically connected, and described the second electrode pin runs through described the first through hole and described the second die bond portion forms electric connection.
2. the support for upside-down mounting semiconductor device according to claim 1, is characterized in that: the upper surface flush of described first, second die bond portion.
3. the support for upside-down mounting semiconductor device according to claim 1, is characterized in that: the width in described gap is 40 μ m ~ 400 μ m.
4. the support for upside-down mounting semiconductor device according to claim 1, is characterized in that: the end that described the second electrode pin is positioned at the first through hole one side has a horizontal expansion portion as the second die bond portion.
5. the support for upside-down mounting semiconductor device according to claim 4, is characterized in that: described extension is flat, with described the second electrode pin one.
6. the support for upside-down mounting semiconductor device according to claim 4, is characterized in that: described extension by by described the second electrode pin end bending, flatten or obtain at the second electrode pin end weld metal sheet.
7. the support for upside-down mounting semiconductor device according to claim 1, is characterized in that: described die bond platform also has the second through hole, and described the first electrode pin runs through this through hole and is connected with described the first die bond portion.
8. the support for upside-down mounting semiconductor device according to claim 7, is characterized in that: the end that described the first electrode pin is positioned at described the second through hole one side has a horizontal expansion portion as the second die bond portion.
9. the support for upside-down mounting semiconductor device according to claim 1, it is characterized in that: described die bond platform is a conductive base, described the first through hole runs through this conductive base, its sidewall has insulating material, described the first electrode pin is formed and is electrically connected by described conductive base and the first die bond portion, and described the second electrode pin runs through described through hole and described the second die bond portion forms electric connection.
10. the support for upside-down mounting semiconductor device according to claim 9, is characterized in that: described the first die bond portion is the arbitrary region of described conductive base except the first hole passes to.
11. supports for upside-down mounting semiconductor device according to claim 9, is characterized in that: the end that described the second electrode pin is positioned at the first through hole one side has a horizontal expansion portion as the second die bond portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420145891.5U CN203859147U (en) | 2014-03-28 | 2014-03-28 | Bracket used for inversely mounting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420145891.5U CN203859147U (en) | 2014-03-28 | 2014-03-28 | Bracket used for inversely mounting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203859147U true CN203859147U (en) | 2014-10-01 |
Family
ID=51608988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420145891.5U Expired - Lifetime CN203859147U (en) | 2014-03-28 | 2014-03-28 | Bracket used for inversely mounting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203859147U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244224A (en) * | 2017-07-11 | 2019-01-18 | Lg 伊诺特有限公司 | Light emitting device package |
-
2014
- 2014-03-28 CN CN201420145891.5U patent/CN203859147U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244224A (en) * | 2017-07-11 | 2019-01-18 | Lg 伊诺特有限公司 | Light emitting device package |
| CN109244224B (en) * | 2017-07-11 | 2023-02-21 | 苏州立琻半导体有限公司 | Light emitting device package |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141001 |