CN103545439A - Flip-chip LED COB light source radiating substrate device - Google Patents
Flip-chip LED COB light source radiating substrate device Download PDFInfo
- Publication number
- CN103545439A CN103545439A CN201310466271.1A CN201310466271A CN103545439A CN 103545439 A CN103545439 A CN 103545439A CN 201310466271 A CN201310466271 A CN 201310466271A CN 103545439 A CN103545439 A CN 103545439A
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- China
- Prior art keywords
- chip
- light source
- cob light
- led
- flip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 19
- 229910052718 tin Inorganic materials 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 11
- 238000009434 installation Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 239000006071 cream Substances 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004021 metal welding Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29005—Structure
- H01L2224/29009—Layer connector integrally formed with a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81194—Lateral distribution of the bump connectors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a flip-chip LED COB light source radiating substrate device comprising a circuit layer, a thermally conductive insulting layer, a heating base layer and an insulating reflecting layer covering the circuit layer. Each part of the insulating reflecting layer, corresponding to each LED chip installed, is provided with two through holes; areas of the circuit layer, corresponding to the through holes, are exposed, and substrate electrode pads are formed. The transverse sectional areas of the through holes are equal and are equal to the transverse sectional area of the two electrode pads for the LED chips. The flip-chip LED COB light source radiating substrate device has the advantages that packaging yield is increased, production cost is reduced and packaging efficiency is improved.
Description
Technical field
The present invention relates to LED chip encapsulation technology, refer in particular to a kind of inverted structure LED COB light source heat radiation board device.
Background technology
The key issue of high-power LED encapsulation is heat radiation and bright dipping, and in the time of early, the preparation of great power LED is just amplifications such as chip size, support and shells, and its luminous efficiency, light decay etc. do not improve.Yet along with the amplification of chip size, it is serious that current gathering effect becomes.
Flip chip structure LED chip (flip-chip) electrode is inverted on heat dispersion heat sink, and light is directly from sapphire surface outgoing, at the chip of more traditional formal dress aspect heat radiation, bright dipping, has greater advantage.For making CURRENT DISTRIBUTION even, further improve LED internal quantum efficiency, the N-shaped Ohm contact electrode of most of flip-chips is evenly distributed in light-emitting area with the form of hole.
In prior art, inverted structure LED COB light source heat radiation board device comprises radiating base layer, heat conductive insulating layer, line layer and insulation reflector; Line layer is attached in radiating base layer by heat conductive insulating layer; On line layer, form insulation reflector, and on insulation reflector corresponding each mount that LED flip-chip position is reserved forms two through holes, the two poles of the earth of LED flip-chip are arranged in described two through holes, are electrically connected to line layer.
Flip-chip N-shaped Ohm contact electrode generally with the formal distribution of hole in chip light emitting face, in order to connect all N-shaped ohmic contact layers, the area of chip N-shaped metal welding bed course is generally large than p-type metal welding bed course, accordingly, on substrate, N-shaped soldering pad layer is large compared with p-type soldering pad layer, cause in chip soldering process, cohesive force can be variant before solidifying for liquid tin cream on weld pad, in the curing sequence of operations process of follow-up tin cream, chip is easily shifted, cause welding unsuccessfully, make product fraction defective larger.
In mounting step, flip LED chips utilizes the adhesive force (adhesive force) of tin cream to be temporarily fixed on substrate, cohesive force (cohesive force) formed buoyancy and the adhesive force (adhesive force) of liquid tin cream itself will act on crystal covered chip simultaneously, during not of uniform size the causing of substrate positive and negative electrode pad, the formed buoyancy of liquid tin cream cohesive force (cohesive force) on positive and negative electrode will be different, at tin cream solidification process, chip is easily shifted.Therefore, because LED flip-chip positive and negative electrode pad difference in size is larger, electrode of substrate pad size is also inconsistent, and the ratio of tin cream solidification process generation chip displacement is up to 30%-40%.
Summary of the invention
The object of the present invention is to provide a kind of inverted structure LED COB light source heat radiation board device that improves packaging efficiency and reduce product fraction defective.
For reaching above-mentioned purpose, solution of the present invention is:
A LED COB light source heat radiation board device, comprises line layer, heat conductive insulating layer and radiating base layer and overlays on the insulation reflector on line layer; On insulation reflector, corresponding each LED chip installation site has two through holes, and the corresponding throughhole portions of line layer region is exposed, forms electrode of substrate pad; The cross-sectional area of two through holes is consistent, and consistent with the cross-sectional area of two electrode pads of LED chip.
Further, the material of electrode of substrate pad and chip electrode pad is selected from Au, Sn, Cu, Ag, Al or its combination.
Further, the spacing between two of LED chip electrode pads is more than or equal to 80um.
Adopt after such scheme, the cross-sectional area of two through holes of the present invention is consistent, and consistent with the cross-sectional area of two electrode pads of LED chip.Adopt the inverted structure LED COB light source of soldering technique, in mounting step, flip LED chips utilizes the adhesive force of tin cream to be temporarily fixed on substrate, the formed buoyancy of cohesive force and the adhesive force of liquid tin cream itself act on crystal covered chip, because substrate positive and negative electrode pad is in the same size simultaneously, the formed buoyancy of liquid tin cream cohesive force on positive and negative electrode is identical, at tin cream solidification process, the comparatively equilibrium of power that crystal covered chip the two poles of the earth are suffered, chip is not easy to be shifted.
On insulation reflector, corresponding every LEDs chip installation site has two through holes, make line layer part exposed, as electrode pad, clear size of opening is consistent, makes consistent with the positive and negative electrode pad size of LED chip electric connection, the electrode pad of same size, guaranteed that tin cream cohesive force is identical, can prevent that LED chip is shifted in the sequence of operations of solidifying tin cream, improves the rate of finished products of encapsulation, reduce production costs, improve packaging efficiency.
Accompanying drawing explanation
Fig. 1 is vertical view of the present invention;
Fig. 2 is end view of the present invention.
Label declaration
Radiating base layer 1 heat conductive insulating layer 2
Through hole 41 LED chips 5
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in detail.
Consult shown in Fig. 1 and Fig. 2, a kind of inverted structure LED COB light source heat radiation board device that the present invention discloses, comprises radiating base layer 1, heat conductive insulating layer 2, line layer 3 and insulation reflector 4.Line layer 3 is attached in radiating base layer 1 by heat conductive insulating layer 2, at line layer 3, forms insulation reflector 4.The material of radiating base layer 1 is selected from Al, Cu, Fe, DLC, AlN or its combination.
On insulation reflector 4, corresponding each LED chip installation site has two through holes (electrode of substrate pad) 41, and the corresponding throughhole portions of line layer 3 region is exposed, forms electrode of substrate pad.The cross-sectional area of two through holes 41 is consistent, and size is consistent, and consistent with the cross-sectional area of two electrode pads 51 of LED chip 5.
The material of electrode of substrate pad and LED chip 5 electrode pads 51 is selected from Au, Sn, Cu, Ag, Al or its combination.Spacing between two electrode pads 51 of LED chip 5 is more than or equal to 80um.
On insulation reflector 4, corresponding every LEDs chip 5 installation sites have two through holes 41, make line layer 3 parts exposed, as electrode of substrate pad, through hole 41 consistent size, make positive and negative electrode pad 51 consistent size that are electrically connected with LED chip 5, the electrode of substrate pad of same size and LED chip 5 electrode pads 51, guaranteed that tin cream cohesive force is identical, can prevent that LED chip 5 is shifted in the sequence of operations of solidifying tin cream, improve the rate of finished products of encapsulation, reduce production costs, improve packaging efficiency.
The foregoing is only preferred embodiment of the present invention, the not restriction to this case design, all equivalent variations of doing according to the design key of this case, all fall into the protection range of this case.
Claims (3)
1. an inverted structure LED COB light source heat radiation board device, comprises line layer, heat conductive insulating layer and radiating base layer and overlays on the insulation reflector on line layer; It is characterized in that: on insulation reflector, corresponding each LED chip installation site has two through holes, the corresponding throughhole portions of line layer region is exposed, forms electrode of substrate pad; The cross-sectional area of two through holes is consistent, and consistent with the cross-sectional area of two electrode pads of LED chip.
2. a kind of inverted structure LED COB light source heat radiation board device as claimed in claim 1, is characterized in that: the material of electrode of substrate pad and chip electrode pad is selected from Au, Sn, Cu, Ag, Al or its combination.
3. a kind of inverted structure LED COB light source heat radiation board device as claimed in claim 1, is characterized in that: the spacing between two electrode pads of LED chip is more than or equal to 80um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310466271.1A CN103545439A (en) | 2013-10-09 | 2013-10-09 | Flip-chip LED COB light source radiating substrate device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310466271.1A CN103545439A (en) | 2013-10-09 | 2013-10-09 | Flip-chip LED COB light source radiating substrate device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103545439A true CN103545439A (en) | 2014-01-29 |
Family
ID=49968690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310466271.1A Pending CN103545439A (en) | 2013-10-09 | 2013-10-09 | Flip-chip LED COB light source radiating substrate device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103545439A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275405A (en) * | 2017-06-09 | 2017-10-20 | 郑州云海信息技术有限公司 | A kind of power MOS pipe and its manufacture method, application method |
| CN110085731A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | Light source module |
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
| CN110822308A (en) * | 2019-11-16 | 2020-02-21 | 智然能科技(惠州)有限公司 | Manufacturing method of multi-color-temperature electrodeless dimming and color-mixing COB lamp |
| CN110957411A (en) * | 2018-09-27 | 2020-04-03 | 昆山工研院新型平板显示技术中心有限公司 | Micro-LED chip, preparation method thereof and display device |
| CN112738990A (en) * | 2020-11-12 | 2021-04-30 | 深圳市艾比森光电股份有限公司 | Printed circuit board, display module and LED display screen |
-
2013
- 2013-10-09 CN CN201310466271.1A patent/CN103545439A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275405A (en) * | 2017-06-09 | 2017-10-20 | 郑州云海信息技术有限公司 | A kind of power MOS pipe and its manufacture method, application method |
| CN107275405B (en) * | 2017-06-09 | 2019-10-01 | 郑州云海信息技术有限公司 | A kind of power MOS pipe and its manufacturing method, application method |
| CN110085731A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | Light source module |
| CN110957411A (en) * | 2018-09-27 | 2020-04-03 | 昆山工研院新型平板显示技术中心有限公司 | Micro-LED chip, preparation method thereof and display device |
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
| CN110822308A (en) * | 2019-11-16 | 2020-02-21 | 智然能科技(惠州)有限公司 | Manufacturing method of multi-color-temperature electrodeless dimming and color-mixing COB lamp |
| CN112738990A (en) * | 2020-11-12 | 2021-04-30 | 深圳市艾比森光电股份有限公司 | Printed circuit board, display module and LED display screen |
| WO2022100210A1 (en) * | 2020-11-12 | 2022-05-19 | 深圳市艾比森光电股份有限公司 | Printed circuit board, display module, and led display screen |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140129 |