CN110112126A - Display device and display module and its manufacturing method - Google Patents
Display device and display module and its manufacturing method Download PDFInfo
- Publication number
- CN110112126A CN110112126A CN201910410517.0A CN201910410517A CN110112126A CN 110112126 A CN110112126 A CN 110112126A CN 201910410517 A CN201910410517 A CN 201910410517A CN 110112126 A CN110112126 A CN 110112126A
- Authority
- CN
- China
- Prior art keywords
- layer
- pad
- display device
- substrate
- pad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229910000679 solder Inorganic materials 0.000 claims abstract description 77
- 239000003292 glue Substances 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 136
- 239000011889 copper foil Substances 0.000 claims description 89
- 239000010949 copper Substances 0.000 claims description 55
- 229910052802 copper Inorganic materials 0.000 claims description 47
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 239000011265 semifinished product Substances 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- 239000002390 adhesive tape Substances 0.000 claims description 8
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 8
- 239000002105 nanoparticle Substances 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910008433 SnCU Inorganic materials 0.000 claims description 2
- 229910006913 SnSb Inorganic materials 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims description 2
- 239000004615 ingredient Substances 0.000 claims description 2
- 230000000007 visual effect Effects 0.000 abstract description 5
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 241000218202 Coptis Species 0.000 description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application display device includes flip-chip and substrate, and substrate includes the first pad layer, the second line layer, tertiary circuit layer, the 4th pad layer, and the flip-chip is mounted on the first pad layer.Display module includes that multiple display devices are arranged on backboard, is formed comprising multiple pixels in the independent display device of each of the display module, each pixel is to be equidistantly arranged on substrate.The manufacturing method of display device includes: the batch coated with solder on the first pad layer of substrate；Flip-chip batch is placed on above-mentioned solder；It is placed in heating in high temperature furnace, flip-chip and the first pad layer of substrate are welded together, is formed and is conductively connected；Black glue is coated on soldered substrate and completes solidification.The manufacturing method of display module: the equidistant array of the display device is welded on module backboard.The application display device high reliablity, gap is small, and pixel spacing is small, and display module can realize that fine definition is shown, visual effect consistency is good.
Description
[technical field]
This application involves display fields, more particularly, to a kind of light-emitting diode display part and display module and its manufacturing method.
[background technique]
Existing display module, display device is by package support 110, positive cartridge chip 120, crystal-bonding adhesive, gold thread 130 and black glue
Composition；This display device is to be bonded in three positive cartridge chips in package support by crystal-bonding adhesive, then connect core by gold thread
The electrode of piece and the conductive pin 140 of package support are conductively connected to realize, please refer to Fig. 1；This display device is similar long
The structure of cube.Existing display device and its mould group are, it can be achieved that 1.0mm or more pixel spacing；
This display device of the prior art uses positive cartridge chip, it is necessary to conductive connection, but this mode are realized using gold thread
Low efficiency, and easily there is broken string failure, therefore the reliability of this device is lower；Package support used in display device, it is conductive
Pin is located on the outside of package support, is exposed to outer, oxidizable, poor reliability；Display device shape is not the cuboid of rule, is spelled
After being connected into display module, the gap between display device is larger, i.e. pixel spacing is big, and clarity is low；The encapsulation branch of display device
Frame, conductive pin out-of-flatness, after being spliced into display module, surface smoothness is low, and visual consistency is poor.
Therefore it provides a kind of chip of high reliablity, to provide the display that a kind of pel spacing is small, clarity is high
Part, the display module that flatness is high, visual consistency is high are actually necessary.
[summary of the invention]
The application's is designed to provide the display device and its manufacturing method that a kind of pel spacing is small, clarity is high.
A further object of the application is to provide a kind of display module and its manufacturing method that visual consistency is high.
To realize the application purpose, the following technical schemes are provided:
The application provides a kind of display device comprising flip-chip and substrate, the substrate include the first pad layer, the
Two line layers, tertiary circuit layer, the 4th pad layer, the flip-chip are mounted on the first pad layer, first pad layer,
Second line layer, tertiary circuit layer are equipped with insulating layer between the 4th pad layer, and first pad layer and the setting of the second pad layer connect
The pad face of flip-chip and lower surface backplate is connect, the connection and circuit logic of the substrate are in the second line layer and tertiary circuit
It is realized in layer.
In some embodiments, the display device further includes one layer of black glue being coated on substrate, and the black glue includes
Transparent adhesive tape, nanoscale black particle, nano-scale particle shape additive.
In some embodiments, the display device includes evenly arranged pixel, each pixel include it is red, green,
The flip-chip of blue three-color.
In some embodiments, the bond pad arrangement mode of first pad layer of substrate is matrix arrangement or equilateral triangle
The pad of shape or circular arrangement, the 4th pad layer is arranged close to substrate surrounding.
In some embodiments, its shape of the display device is the cuboid of rule.
The application also provides a kind of manufacturing method of display device comprising following steps:
(1) the batch coated with solder on the first pad layer of substrate, the dosage of solder are suitable with flip chip electrode size；
(2) flip-chip batch is placed on above-mentioned solder, on the positive electrode and the first pad layer of substrate of flip-chip
Positive terminal pad connection, the negative electrode of flip-chip connect with the negative terminal pad on the first pad layer of substrate；
(3) substrate that will be coated with solder He placed flip-chip is placed in heating in high temperature furnace, the temperature in high temperature furnace
Degree need to be higher than the fusing point of high-temperature solder alloy；The high temperature furnace can be electroluminescent fever or photothermal；High-temperature solder melts
Afterwards, flip-chip and the first pad layer of substrate are welded together, is formed and is conductively connected；
(4) under vacuum conditions by nanoscale black particle, transparent adhesive tape and nano-scale particle shape additive, high-speed stirred is mixed
It closes uniformly (mixing speed about 1200rpm), forms black glue；It is coated on soldered substrate in above-mentioned black glue；And by black glue
Surface evening, leveling fashion can be molding, can be and strikes off or be grinding；Black glue is completed under the conditions of 150 DEG C solid
Change；
(5) above-mentioned semi-finished product are cut apart along adjacent individual monitor part medium line, completes the batch of the display device
Production.
In some embodiments, solder is high-temperature solder in step (1), and the alloy melting point of the solder is higher than 200 DEG C；Coating
The mode of the solder can be one or more of spot printing, spraying, printing.
In some embodiments, wherein the manufacturing method of substrate includes the following steps:
(1) by two copper foils and an insulating materials pressing, double face copper is made, the double face copper is in the display
In part, the copper foil of the copper foil of the second line layer of composing base, insulating layer and tertiary circuit layer；
(2) upper copper of double face copper, insulating layer and lower copper foil through-hole are run through；
(3) plating mode electro-coppering in the through-hole of above-mentioned copper-clad plate is used, upper copper and the lower layer of double face copper are made
Copper foil, which is realized, to be conductively connected；
(4) by chemistry displacement reaction, copper foil unwanted in the upper copper and lower copper foil of double face copper is lost
Quarter is fallen, and the lower route of needs is stayed, and completes the production of the second line layer and tertiary circuit layer；
(5) insulating layer and copper foil are pressed again respectively in the two sides up and down of above-mentioned semi-finished product substrate, forms the first pad layer
The copper foil of copper foil and the 4th pad layer；
(6) it is punched on the copper foil of the copper foil of the first pad layer and the 4th pad layer, the hole of the copper foil of the first pad layer
Deep to reach the second line layer, the hole depth on the copper foil of the 4th pad layer reaches tertiary circuit layer；
(7) plating mode electro-coppering in the through-hole of above-mentioned semi-finished product substrate is used, the copper foil and second of the first pad layer is made
Line layer, which is realized, to be conductively connected, and is realized the copper foil of the 4th layer of pad layer and tertiary circuit layer and is conductively connected；
(8) by chemistry displacement reaction, copper foil unwanted on the first pad layer copper foil and the 4th pad layer copper foil is lost
Quarter is fallen, and the production of the first pad layer and the 4th pad layer is completed；
(9) it is surface-treated in the first pad layer and the 4th pad layer surface, applies silver-coated layer in its bond pad surface, prevent
Bond pad surface is oxidized.
The application also provides a kind of display module comprising multiple equidistant array manner rows of display device as described above
Be listed on backboard and be conductively connected, there is into the metal pad of equidistant matrix arrangement on the backboard, the relative position of the pad with
The pad of the display device substrate it is corresponding, form in the independent display device of each of the display module comprising multiple pixels
Point, each pixel is to be equidistantly arranged on substrate.
The application also provides a kind of manufacturing method of display module comprising following steps:
(1) coated with solder on module backboard, the mode for coating the solder can be one of spot printing, spraying, printing
Or it is several；The dosage of solder is suitable with the 4th pad layer size of substrate in the display device；
(2) display device is placed by the equidistant array of corresponding position on backboard；
(3) by above-mentioned backboard and display device, it is placed in heating in high temperature furnace, after medium temperature solder melts, by the display
Device is formed and is conductively connected together with backboard pad solder.
In some embodiments, which is medium temperature solder, and fusing point is lower than 200 DEG C.
The prior art is compared, the application has the following advantages:
Herein described display device uses upside-down mounting flip-chip, and process efficiency is high, no broken string Problem of Failure, reliability
It is high；For the display device connection all inside substrate, no route is exposed, non-oxidation risk, high reliablity；The display
Device, shape are the cuboid of rule, and after being spliced into display module, the gap between display device is small, and pixel spacing is small, can
Realize that fine definition is shown, and the display module after splicing, surfacing, appearance is consistent, and visual effect consistency is good；This Shen
Please display device and mould group and its manufacturing method realize 0.8mm or less pel spacing fine definition and show.
[Detailed description of the invention]
Fig. 1 is prior art display part schematic diagram；
Fig. 2 is the schematic diagram of substrate structure of the application display device；
Fig. 3 is the application display device schematic diagram；
Fig. 4 a~4f is the pad design embodiment schematic diagram of the first pad layer in the application display device；
Fig. 5 a~5b is the pad design embodiment schematic diagram of the 4th pad layer in the application display device
Fig. 6 a~6c is that the application display device places flip chip embodiment figure on the first pad layer；
Fig. 7 is the manufacturing method flow chart of the application display device；
Fig. 8 a~8b is the backboard pad design embodiment schematic diagram of the application display module；
Fig. 9 is the structural side view of the application display module；
Figure 10 a~10b is each display device arrangement schematic diagram of the application display module；
Figure 11 is the manufacturing method flow chart of the application display module.
[specific embodiment]
Please refer to Fig. 2 and 3, the application display device 200 includes flip-chip 202 and substrate 201, and the substrate includes the
One pad layer 210, the second line layer 220, tertiary circuit layer 230, the 4th pad layer 240, the flip-chip are mounted on first
On pad layer, first pad layer, tertiary circuit layer, is equipped with insulating layer 250 between the 4th pad layer at the second line layer, should
The pad face of first pad layer and the second pad layer setting connection flip-chip and lower surface backplate, the connection and electricity of the substrate
Road logic is realized in the second line layer and tertiary circuit floor.
The display device further includes one layer of black glue 203 being coated on substrate, and the black glue includes transparent adhesive tape, nanoscale
Black particle, nano-scale particle shape additive.
The display device includes evenly arranged pixel, and each pixel includes the upside-down mounting of three kinds of colors of red, green, blue
Chip.The all flip-chips of flip-chip used in the display device, there are two electrodes, respectively anode and cathode below.
Fig. 4 a~4f is please referred to, the bond pad arrangement mode of first pad layer of substrate 210 is matrix arrangement or equilateral
Triangle or circular arrangement, symmetric arrays or mirror alignment.Fig. 5 a~5b is please referred to, the pad of the 4th pad layer 240 leans on
Nearly substrate surrounding arrangement.The pad of first pad layer 210, the pad of the 4th pad layer 240 can be rectangular, rectangle, circle, three
The various geometries such as angular.
Fig. 6 a~6c is please referred to, the pad of the first pad layer 210 is mutually indepedent, no connection；The of the substrate
In one pad layer, every two pad corresponds to the position where a flip-chip, and every two pad partners, one of them is
Anode, another is cathode, and each pad is connected with the electrode of flip-chip by high-temperature solder, the anode of the first pad layer
The anode of pad and flip-chip connects, and the negative terminal pad of the first pad layer and the cathode of flip-chip connect；First pad layer
In, the position where the corresponding pixel of every 6 pads.The pad of 4th pad layer 240 is mutually indepedent, no connection；
The bond pad shapes of first pad layer 210 and the 4th pad layer 240 may be the same or different.
Referring to Fig. 7, the application also provides a kind of manufacturing method of display device comprising following steps:
(1) the batch coated with solder on the first pad layer of substrate, the dosage of solder are suitable with flip chip electrode size；
(2) flip-chip batch is placed on above-mentioned solder, on the positive electrode and the first pad layer of substrate of flip-chip
Positive terminal pad connection, the negative electrode of flip-chip connect with the negative terminal pad on the first pad layer of substrate；
(3) substrate that will be coated with solder He placed flip-chip is placed in heating in high temperature furnace, the temperature in high temperature furnace
Degree need to be higher than the fusing point of high-temperature solder alloy；The high temperature furnace can be electroluminescent fever or photothermal；High-temperature solder melts
Afterwards, flip-chip and the first pad layer of substrate are welded together, is formed and is conductively connected；
(4) under vacuum conditions by nanoscale black particle, transparent adhesive tape and nano-scale particle shape additive, high-speed stirred is mixed
It closes uniformly (mixing speed about 1200rpm), forms black glue；It is coated on soldered substrate in above-mentioned black glue；And by black glue
Surface evening, leveling fashion can be molding, can be and strikes off or be grinding；Black glue is completed under the conditions of 150 DEG C solid
Change；
(5) above-mentioned semi-finished product are cut apart along adjacent individual monitor part medium line, completes the batch of the display device
Production.
Wherein, solder is high-temperature solder in step (1), and the ingredient of the solder is SnAgCu alloy, SnSb alloy, SnCu conjunction
A kind of in gold, the alloy melting point of the solder is higher than 200 DEG C；The mode for coating the solder can be spot printing, spraying, one in printing
Kind is several.
Wherein the manufacturing method of substrate includes the following steps:
(1) by two copper foils and an insulating materials pressing, double face copper, copper thickness 20um, insulating layer is made
With a thickness of 0.1mm；The double face copper is in the display device, copper foil, the insulating layer and of the second line layer of composing base
The copper foil of three line layers；
(2) upper copper of double face copper, insulating layer and lower copper foil through-hole are run through；
(3) plating mode electro-coppering in the through-hole of above-mentioned copper-clad plate, reaction equation are used are as follows: Cu2++2e- → Cu, and hole
It fills up, realizes the upper copper of double face copper and lower copper foil and be conductively connected；
(4) pass through chemistry displacement reaction, reaction equation are as follows: 2FeCl3+Cu=CuCl2++2FeCl2, by double face copper
Unwanted copper foil etches away in upper copper and lower copper foil, stays the lower route of needs, completes the second line layer and third line
The production of road floor；
(5) insulating layer and copper foil are pressed again respectively in the two sides up and down of above-mentioned semi-finished product substrate, forms the first pad layer
The copper foil of copper foil and the 4th pad layer；Copper thickness is 20um；
(6) it is punched on the copper foil of the copper foil of the first pad layer and the 4th pad layer, the hole of the copper foil of the first pad layer
Deep to reach the second line layer, the hole depth on the copper foil of the 4th pad layer reaches tertiary circuit layer；
(7) plating mode electro-coppering in the through-hole of above-mentioned semi-finished product substrate, reaction equation are used are as follows: Cu2++2e- → Cu, and
Hole is filled up, the copper foil of the first pad layer and the second line layer is realized and is conductively connected, make the copper foil and the of the 4th layer of pad layer
Three line layers, which are realized, to be conductively connected；
(8) pass through chemistry displacement reaction, reaction equation are as follows: 2FeCl3+Cu=CuCl2++2FeCl2, by the first pad layer copper
Unwanted copper foil etches away on foil and the 4th pad layer copper foil, completes the production of the first pad layer and the 4th pad layer；
(9) it is surface-treated in the first pad layer and the 4th pad layer surface, applies silver-coated layer, silver layer in its bond pad surface
Thickness 0.1-0.5um；Bond pad surface is prevented to be oxidized.
Fig. 8 a, 8b, Fig. 9 and Figure 10 a, Figure 10 b are please referred to, the application also provides a kind of display module comprising Duo Gesuo
The equidistant array manner of display device 200 stated is arranged on backboard 302 and is conductively connected, and has into equidistant matrix on the backboard
The metal pad 301 of arrangement, the relative position of the pad is corresponding with the pad of the display device substrate, forms the display mould
It include multiple pixels in the independent display device of each of group, each pixel is to be equidistantly arranged on substrate.By batch
Individual monitor part 200 is arranged on backboard 302 with equidistant array manner, is realized and is conductively connected by medium temperature solder.
There are into the metal pad 301 of equidistant matrix arrangement, the relative position of the pad and the display on the backboard 302
The pad relative position of 4th pad layer of 200 substrate of part corresponds；Form the independent display of each of the display module
It include multiple pixels in part, each pixel is to be equidistantly arranged on substrate；Single base used in the individual monitor part
Plate, equally array arranges on full wafer backboard；
Figure 11 is please referred to, the application also provides a kind of manufacturing method of display module comprising following steps:
(1) coated with solder on module backboard, the mode for coating the solder can be one of spot printing, spraying, printing
Or it is several；The dosage of solder is suitable with the 4th pad layer size of substrate in the display device；
(2) display device is placed by the equidistant array of corresponding position on backboard；
(3) by above-mentioned backboard and display device, it is placed in heating in high temperature furnace, the temperature in high temperature furnace need to be higher than medium temperature and weld
Expect the fusing point of alloy but is lower than 200 DEG C；The high temperature furnace can be electroluminescent fever or photothermal；After medium temperature solder melts,
By the display device together with backboard pad solder, is formed and be conductively connected.
Wherein, which is medium temperature solder, and fusing point is lower than 200 DEG C.
One of specific embodiment:
(1) by two copper foils and an insulating materials pressing, double face copper, copper thickness 20um, insulating layer is made
With a thickness of 0.1mm；The double face copper is in the display device, copper foil, the insulating layer and of the second line layer of composing base
The copper foil of three line layers；
(2) upper copper of double face copper, insulating layer and lower copper foil through-hole are run through；
(3) plating mode electro-coppering in the through-hole of above-mentioned copper-clad plate, reaction equation are used are as follows: Cu2++2e- → Cu, and hole
It fills up, realizes the upper copper of double face copper and lower copper foil and be conductively connected；
(4) pass through chemistry displacement reaction, reaction equation are as follows: 2FeCl3+Cu=CuCl2++2FeCl2, by double face copper
Unwanted copper foil etches away in upper copper and lower copper foil, stays the lower route of needs, completes the second line layer and third line
The production of road floor；
(5) insulating layer and copper foil are pressed again respectively in the two sides up and down of above-mentioned semi-finished product substrate, forms the first pad layer
The copper foil of copper foil and the 4th pad layer；Copper thickness is 20um；
(6) it is punched on the copper foil of the copper foil of the first pad layer and the 4th pad layer, the hole of the copper foil of the first pad layer
Deep to reach the second line layer, the hole depth on the copper foil of the 4th pad layer reaches tertiary circuit layer；
(7) plating mode electro-coppering in the through-hole of above-mentioned semi-finished product substrate, reaction equation are used are as follows: Cu2++2e- → Cu, and
Hole is filled up, the copper foil of the first pad layer and the second line layer is realized and is conductively connected, make the copper foil and the of the 4th layer of pad layer
Three line layers, which are realized, to be conductively connected；
(8) pass through chemistry displacement reaction, reaction equation are as follows: 2FeCl3+Cu=CuCl2++2FeCl2, by the first pad layer copper
Unwanted copper foil etches away on foil and the 4th pad layer copper foil, completes the production of the first pad layer and the 4th pad layer；
(9) it is surface-treated in the first pad layer and the 4th pad layer surface, applies silver-coated layer, silver layer in its bond pad surface
Thickness 0.1-0.5um；Bond pad surface is prevented to be oxidized.
(10) the batch printing solder on the first pad layer of entire substrate, this solder be high-temperature solder, the solder at
Dividing is SnAgCu alloy, and the alloy melting point of the solder is higher than 220 DEG C；
(11) flip-chip batch is placed on above-mentioned solder, the positive electrode of flip-chip and the first pad layer of substrate
Positive terminal pad connection, the negative electrode of flip-chip and the first pad layer negative terminal pad of substrate connect, the arrangement side of flip-chip
Formula such as Fig. 6 a；
(12) substrate that will have been printed solder He placed flip-chip is placed in heating, high temperature in 245 DEG C of high temperature furnace
After solder melts, flip-chip and the first pad layer of substrate are welded together, is formed and is conductively connected；
(13) under vacuum conditions by nanoscale black particle, transparent adhesive tape and nano-scale particle shape additive, high-speed stirred
It is uniformly mixed (mixing speed about 1200rpm), forms black glue；It is coated on soldered substrate in above-mentioned black glue；And it will be black
Glue surface evening, leveling fashion can be molding, can be and strikes off or be grinding；Black glue is completed under the conditions of 150 DEG C solid
Change；
(14) above-mentioned semi-finished product are cut apart along adjacent individual monitor part medium line, completes the batch of the display device
Production；
(15) printing solder on module backboard, the solder are medium temperature solder, and fusing point is 180 DEG C；
(16) display device is placed by the equidistant array of corresponding position on backboard；
(17) by above-mentioned backboard and display device, it is placed in heating in high temperature furnace, the temperature in high temperature furnace is 200 DEG C；It will
The display device is formed and is conductively connected together with backboard pad solder；
Specific embodiment 2:
(1) by two copper foils and 1 insulating materials pressing, double face copper, copper thickness 20um, insulating layer thickness is made
Degree is 0.1mm；
(2) upper copper of above-mentioned double face copper, insulating layer and lower copper foil through-hole are run through；
(3) electro-coppering in the through-hole of above-mentioned copper-clad plate, and hole is filled up, realize upper copper and lower copper foil conductive
Connection；
(4) copper unwanted in upper copper and lower copper foil is etched away, stays the lower route of needs, complete the second route
The production of layer and tertiary circuit layer；
(5) two sides press insulating layer and copper foil again respectively above and below above-mentioned semi-finished product substrate, form the copper of the first pad layer
The copper foil of foil and the 4th pad layer, copper thickness 20um；
(6) it is punched on above-mentioned first pad layer copper foil and the 4th pad layer copper foil, the hole depth on the first pad layer copper foil
The second line layer is reached, the hole depth on the 4th pad layer copper foil reaches tertiary circuit layer；
(7) electro-coppering in the through-hole of above-mentioned semi-finished product substrate, and hole is filled up, make the first pad layer copper foil and the second line
Road floor, which is realized, to be conductively connected, and is realized four pad layer copper foils and tertiary circuit layer and is conductively connected；
(8) unwanted copper foil on the first pad layer copper foil and the 4th pad layer copper foil is etched away, completes the first pad
The production of layer and the 4th pad layer；
(9) it is surface-treated in the first pad layer and the 4th pad layer surface, applies silver-coated layer, silver layer in its bond pad surface
Thickness 0.1-0.5um；
(10) the batch printing solder on the first pad layer of entire substrate, this solder be high-temperature solder, the solder at
Dividing is SnAgCu alloy, and the alloy melting point of the solder is higher than 220 DEG C；
(11) flip-chip batch is placed on above-mentioned solder, the positive electrode of flip-chip and the first pad layer of substrate
Positive terminal pad connection, the negative electrode of flip-chip and the first pad layer negative terminal pad of substrate connect, the arrangement side of flip-chip
Formula such as Fig. 6 c；
(12) substrate that will have been printed solder He placed flip-chip is placed in heating, high temperature in 245 DEG C of high temperature furnace
After solder melts, flip-chip and the first pad layer of substrate are welded together, is formed and is conductively connected；
(13) under vacuum conditions by nanoscale black particle, transparent adhesive tape and nano-scale particle shape additive, high-speed stirred
It is uniformly mixed (mixing speed about 1200rpm), forms black glue；It is coated on soldered substrate in above-mentioned black glue；And it will be black
Glue surface evening, leveling fashion can be molding, can be and strikes off or be grinding；Black glue is completed under the conditions of 150 DEG C solid
Change；
(14) above-mentioned semi-finished product are cut apart along adjacent individual monitor part medium line, completes the batch of the display device
Production, such as Fig. 7；
(15) printing solder on module backboard, the solder are medium temperature solder, and fusing point is 180 DEG C；
(16) display device is placed by the equidistant array of corresponding position on backboard；By above-mentioned backboard and display
Part, is placed in heating in high temperature furnace, and the temperature in high temperature furnace is 200 DEG C；By the display device and backboard pad solder one
It rises, is formed and be conductively connected.
The foregoing is merely the preferred embodiment of the application, the protection scope of the application is not limited thereto, any to be based on
Equivalent transformation in technical scheme belongs within the application protection scope.
Claims (10)
1. a kind of display device, which is characterized in that it includes flip-chip and substrate, and the substrate includes the first pad layer, the
Two line layers, tertiary circuit layer, the 4th pad layer, the flip-chip are mounted on the first pad layer, first pad layer,
Second line layer, tertiary circuit layer are equipped with insulating layer between the 4th pad layer, and first pad layer and the setting of the second pad layer connect
The pad face of flip-chip and lower surface backplate is connect, the connection and circuit logic of the substrate are in the second line layer and tertiary circuit
It is realized in layer.
2. display device as described in claim 1, which is characterized in that the display device further includes one layer and is coated on substrate
Black glue, the black glue includes transparent adhesive tape, nanoscale black particle, nano-scale particle shape additive.
3. display device as described in claim 1, which is characterized in that the display device includes evenly arranged pixel,
Each pixel includes the flip-chip of three kinds of colors of red, green, blue.
4. display device as described in claim 1, which is characterized in that the bond pad arrangement mode of first pad layer of substrate is
The pad of matrix arrangement or equilateral triangle or circular arrangement, the 4th pad layer is arranged close to substrate surrounding.
5. a kind of manufacturing method of display device, which is characterized in that it includes the following steps:
(1) the batch coated with solder on the first pad layer of substrate, the dosage of solder are suitable with flip chip electrode size；
(2) flip-chip batch is placed on above-mentioned solder, on the positive electrode and the first pad layer of substrate of flip-chip just
The connection of pole pad, the negative electrode of flip-chip are connect with the negative terminal pad on the first pad layer of substrate；
(3) substrate that will be coated with solder He placed flip-chip is placed in heating in high temperature furnace, after high-temperature solder melts,
Flip-chip and the first pad layer of substrate are welded together, is formed and is conductively connected；
(4) under vacuum conditions by nanoscale black particle, transparent adhesive tape and nano-scale particle shape additive, high-speed stirred mixing is equal
It is even, form black glue；It is coated on soldered substrate in above-mentioned black glue；And by black glue surface evening；
(5) above-mentioned semi-finished product are cut apart along adjacent individual monitor part medium line, completes the batch making of the display device.
6. the manufacturing method of display device as described in claim 1, which is characterized in that solder is high-temperature solder in step (1),
The ingredient of the solder is SnAgCu alloy, SnSb alloy, a kind of in SnCu alloy, and the alloy melting point of the solder is higher than 200 DEG C；It applies
The mode for covering the solder can be one or more of spot printing, spraying, printing.
7. the manufacturing method of display device as described in claim 1, which is characterized in that wherein the manufacturing method of substrate includes such as
Lower step:
(1) by two copper foils and an insulating materials pressing, double face copper is made, the double face copper is in the display device
In, the copper foil of the copper foil of the second line layer of composing base, insulating layer and tertiary circuit layer；
(2) upper copper of double face copper, insulating layer and lower copper foil through-hole are run through；
(3) plating mode electro-coppering in the through-hole of above-mentioned copper-clad plate is used, the upper copper and lower copper foil of double face copper are made
It realizes and is conductively connected；
(4) by chemistry displacement reaction, unwanted copper foil in the upper copper and lower copper foil of double face copper is etched away,
The lower route of needs is stayed, the production of the second line layer and tertiary circuit layer is completed；
(5) insulating layer and copper foil are pressed again respectively in the two sides up and down of above-mentioned semi-finished product substrate, forms the copper foil of the first pad layer
And the 4th pad layer copper foil；
(6) it is punched on the copper foil of the copper foil of the first pad layer and the 4th pad layer, the hole depth of the copper foil of the first pad layer arrives
Up to the second line layer, the hole depth on the copper foil of the 4th pad layer reaches tertiary circuit layer；
(7) plating mode electro-coppering in the through-hole of above-mentioned semi-finished product substrate is used, the copper foil and the second route of the first pad layer are made
Layer, which is realized, to be conductively connected, and is realized the copper foil of the 4th layer of pad layer and tertiary circuit layer and is conductively connected；
(8) by chemistry displacement reaction, unwanted copper foil on the first pad layer copper foil and the 4th pad layer copper foil is etched away,
Complete the production of the first pad layer and the 4th pad layer；
(9) it is surface-treated in the first pad layer and the 4th pad layer surface, applies silver-coated layer in its bond pad surface, prevent pad
Surface is oxidized.
8. a kind of display module, which is characterized in that it includes multiple described in any item display devices of such as Claims 1 to 4
Pitch arrays mode is arranged on backboard and is conductively connected, and has into the metal pad of equidistant matrix arrangement on the backboard, the weldering
The relative position of disk is corresponding with the pad of the display device substrate, forms the independent display device of each of the display module
In include multiple pixels, each pixel is to be equidistantly arranged on substrate.
9. a kind of manufacturing method of display module, which is characterized in that it includes the following steps:
(1) coated with solder on module backboard；The dosage of solder is suitable with the 4th pad layer size of substrate in the display device；
(2) display device is placed by the equidistant array of corresponding position on backboard；
(3) by above-mentioned backboard and display device, it is placed in heating in high temperature furnace, after medium temperature solder melts, by the display device
Together with backboard pad solder, is formed and be conductively connected.
10. display device as claimed in claim 9, which is characterized in that the solder is medium temperature solder, and fusing point is lower than 200 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910410517.0A CN110112126A (en) | 2019-05-16 | 2019-05-16 | Display device and display module and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910410517.0A CN110112126A (en) | 2019-05-16 | 2019-05-16 | Display device and display module and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110112126A true CN110112126A (en) | 2019-08-09 |
Family
ID=67490659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910410517.0A Pending CN110112126A (en) | 2019-05-16 | 2019-05-16 | Display device and display module and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110112126A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111373553A (en) * | 2019-12-30 | 2020-07-03 | 重庆康佳光电技术研究院有限公司 | Light-emitting device, preparation method thereof and display device |
| CN111489661A (en) * | 2019-11-15 | 2020-08-04 | 友达光电股份有限公司 | Display device |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010013425A1 (en) * | 1999-03-11 | 2001-08-16 | Shinko Electric Industries Co., Ltd. | Multilayered Substrate for Semiconductor Device |
| JP2005347401A (en) * | 2004-06-01 | 2005-12-15 | Meiko:Kk | Optical element chip component |
| JP2006216744A (en) * | 2005-02-03 | 2006-08-17 | Toppan Printing Co Ltd | Wiring board |
| CN101877331A (en) * | 2009-04-28 | 2010-11-03 | 三星康宁精密琉璃株式会社 | Flexible substrate for display panel and manufacturing method thereof |
| CN102510662A (en) * | 2011-12-31 | 2012-06-20 | 珠海市耀宏电子科技有限公司 | Novel LED sinkless copper plated lamp tape circuit board and manufacturing process thereof |
| CN202455645U (en) * | 2011-12-16 | 2012-09-26 | 田茂福 | Light-emitting diode (LED) single-sided circuit board produced with three wires |
| CN103167724A (en) * | 2011-12-16 | 2013-06-19 | 田茂福 | Light-emitting diode (LED) double-sided circuit board made by four wires |
| CN103545439A (en) * | 2013-10-09 | 2014-01-29 | 厦门吉瓦特照明科技有限公司 | Flip-chip LED COB light source radiating substrate device |
| CN106097913A (en) * | 2016-08-18 | 2016-11-09 | 武汉华尚绿能科技股份有限公司 | A kind of clear glass base display screen and preparation technology thereof |
| CN206312923U (en) * | 2016-12-20 | 2017-07-07 | 广州硅能照明有限公司 | Upside-down mounting COB substrates |
| CN108807356A (en) * | 2018-06-05 | 2018-11-13 | 深圳市智讯达光电科技有限公司 | A kind of four-in-one mini-LED modules, display screen and manufacturing method |
| CN109411455A (en) * | 2018-09-27 | 2019-03-01 | 佛山市国星光电股份有限公司 | A kind of LED display unit group and display panel |
| CN209981212U (en) * | 2019-05-16 | 2020-01-21 | 深圳市兆驰节能照明股份有限公司 | Display device and display module |
| WO2023221481A1 (en) * | 2022-05-17 | 2023-11-23 | 佛山市国星光电股份有限公司 | Substrate module, method for manufacturing substrate module, and display module |
-
2019
- 2019-05-16 CN CN201910410517.0A patent/CN110112126A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010013425A1 (en) * | 1999-03-11 | 2001-08-16 | Shinko Electric Industries Co., Ltd. | Multilayered Substrate for Semiconductor Device |
| JP2005347401A (en) * | 2004-06-01 | 2005-12-15 | Meiko:Kk | Optical element chip component |
| JP2006216744A (en) * | 2005-02-03 | 2006-08-17 | Toppan Printing Co Ltd | Wiring board |
| CN101877331A (en) * | 2009-04-28 | 2010-11-03 | 三星康宁精密琉璃株式会社 | Flexible substrate for display panel and manufacturing method thereof |
| CN103167724A (en) * | 2011-12-16 | 2013-06-19 | 田茂福 | Light-emitting diode (LED) double-sided circuit board made by four wires |
| CN202455645U (en) * | 2011-12-16 | 2012-09-26 | 田茂福 | Light-emitting diode (LED) single-sided circuit board produced with three wires |
| CN102510662A (en) * | 2011-12-31 | 2012-06-20 | 珠海市耀宏电子科技有限公司 | Novel LED sinkless copper plated lamp tape circuit board and manufacturing process thereof |
| CN103545439A (en) * | 2013-10-09 | 2014-01-29 | 厦门吉瓦特照明科技有限公司 | Flip-chip LED COB light source radiating substrate device |
| CN106097913A (en) * | 2016-08-18 | 2016-11-09 | 武汉华尚绿能科技股份有限公司 | A kind of clear glass base display screen and preparation technology thereof |
| CN206312923U (en) * | 2016-12-20 | 2017-07-07 | 广州硅能照明有限公司 | Upside-down mounting COB substrates |
| CN108807356A (en) * | 2018-06-05 | 2018-11-13 | 深圳市智讯达光电科技有限公司 | A kind of four-in-one mini-LED modules, display screen and manufacturing method |
| CN109411455A (en) * | 2018-09-27 | 2019-03-01 | 佛山市国星光电股份有限公司 | A kind of LED display unit group and display panel |
| CN209981212U (en) * | 2019-05-16 | 2020-01-21 | 深圳市兆驰节能照明股份有限公司 | Display device and display module |
| WO2023221481A1 (en) * | 2022-05-17 | 2023-11-23 | 佛山市国星光电股份有限公司 | Substrate module, method for manufacturing substrate module, and display module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111489661A (en) * | 2019-11-15 | 2020-08-04 | 友达光电股份有限公司 | Display device |
| CN111373553A (en) * | 2019-12-30 | 2020-07-03 | 重庆康佳光电技术研究院有限公司 | Light-emitting device, preparation method thereof and display device |
| WO2021134239A1 (en) * | 2019-12-30 | 2021-07-08 | 重庆康佳光电技术研究院有限公司 | Light emitting device and manufacturing method therefor, and display apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10847691B2 (en) | LED flip chip structures with extended contact pads formed by sintering silver | |
| CN106992169A (en) | A kind of upside-down mounting RGB LED encapsulation modules and its display screen | |
| TWI419272B (en) | Semiconductor chip assembly with post/base heat spreader and signal post | |
| CN106783817A (en) | LED package assemblings, LED modules and its manufacture method | |
| CN106486490B (en) | Novel LED panel assembly, 3D panel assembly and 3D display screen | |
| CN110112126A (en) | Display device and display module and its manufacturing method | |
| CN207587722U (en) | A kind of LED display of SMT all-colour LEDs module and its composition | |
| CN203433761U (en) | Light-emitting diode (LED) light-emitting display board | |
| CN205081118U (en) | Novel LED panel components , 3D panel components and 3D display screen | |
| CN115394763A (en) | Display module and manufacturing method thereof | |
| CN114284420A (en) | Light emitting unit, manufacturing method thereof and light emitting assembly | |
| CN207781646U (en) | A kind of LED chip face-down bonding structure and LED lamp bead | |
| CN206947335U (en) | A kind of upside-down mounting RGB LED encapsulation modules and its display screen | |
| CN110635016B (en) | Miniature substrate packaging method | |
| CN107146542A (en) | A kind of LED display module | |
| CN209087907U (en) | A kind of flip LED mould group | |
| CN209981212U (en) | Display device and display module | |
| CN203433760U (en) | Flexible LED (light-emitting diode) display panel | |
| US20220231198A1 (en) | Substrate structure and electronic device | |
| CN110010753A (en) | Semiconductor light-emitting apparatus and its manufacturing method | |
| CN205960016U (en) | Adopt LED packaging structure who electroplates base plate | |
| CN110931627B (en) | Miniature light-emitting diode display back plate and manufacturing method thereof | |
| CN203339210U (en) | LED eutectic packaging pedestal, | |
| CN109166846A (en) | A kind of novel LED display device and manufacture craft | |
| CN104465427A (en) | Packaging structure and semiconductor process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.199, Hujia Road, Changdong Industrial Park, Qingshanhu District, Nanchang City, Jiangxi Province 330000 (office building) (1st-3rd floor) Applicant after: Jiangxi zhaochi Guangyuan Technology Co.,Ltd. Address before: 518000 zhaochi Innovation Industrial Park, No.1, LiLang Road, xialilang community, Nanwan street, Longgang District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN MTC OPTRONICS Co.,Ltd. |