CN206312923U - Upside-down mounting COB substrates - Google Patents
Upside-down mounting COB substrates Download PDFInfo
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- CN206312923U CN206312923U CN201621404314.9U CN201621404314U CN206312923U CN 206312923 U CN206312923 U CN 206312923U CN 201621404314 U CN201621404314 U CN 201621404314U CN 206312923 U CN206312923 U CN 206312923U
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Abstract
The utility model discloses upside-down mounting COB substrates, including substrate layer, upper insulating barrier, adhesive layer, line layer, pad layer and solder mask；The top surface of substrate layer is provided with insulating barrier, and line layer is bonded in the top surface of upper insulating barrier by adhesive layer；Line layer top surface is provided with first area and second area, and first area is provided with pad layer, and second area is provided with solder mask；Pad layer includes the electrode pad of the pin for connecting external LED chip and the external pad for connecting the circuit of outside；The cross-sectional area of the line layer is more than the 30% of the cross-sectional area of substrate layer.The utility model has the advantage of a kind of structure of suitable upside-down mounting COB and preparation method thereof is provided, conventional LED chip formal dress mode is substituted, without gold thread, direct chip attachment improves radiating, light extraction efficiency, stability on substrate.
Description
Technical field
The utility model is related to emitting semiconductor encapsulation technology, more particularly to upside-down mounting COB encapsulation technologies.
Background technology
Formal dress chip technology is traditional microelectronic packaging technology, and its technology maturation has wide range of applications.In the market
Most LED are forward LED, and LED chip formal dress on substrate, under, electrode is welded upper Sapphire Substrate with gold thread
Realize electrical connection.When packed LED chip is lighted, heat is transferred to heat-conducting substrate by Sapphire Substrate, and thermally conductive pathways are more long,
The thermal resistance of chip is big, junction temperature is high；The light that chip sends can be covered by gold thread and electrode, influence light extraction efficiency；And tiny gold
Line is very fragile, is not sufficiently stable.
Utility model content
In order to overcome the deficiencies in the prior art, the purpose of this utility model is to provide the upside-down mounting for upside-down mounting COB encapsulation
COB substrates, it can solve the problems, such as that positive cartridge chip is unstable.
The purpose of this utility model is realized using following technical scheme：
Upside-down mounting COB substrates, including substrate layer, upper insulating barrier, adhesive layer, line layer, pad layer and solder mask；Substrate layer
Top surface is provided with insulating barrier, and line layer is bonded in the top surface of upper insulating barrier by adhesive layer；
Line layer top surface is provided with first area and second area, and first area is provided with pad layer, and second area is provided with resistance
Layer；Pad layer includes the electrode pad of the pin for connecting external LED chip and for connecting the external of outside circuit
Pad；The cross-sectional area of the line layer is more than the 30% of the cross-sectional area of substrate layer.
Further, electrode pad includes P poles pad and N poles pad, and trough is provided between P poles pad and N poles pad
Domain.
Further, the bottom surface of substrate layer is provided with lower insulating barrier.
Further, the thickness of substrate layer is 0.3mm-2mm.
Further, the thickness of upper insulating barrier is 20um-70um.
Further, the thickness of adhesive layer is 1um-5um.
Further, the thickness of line layer is 10um-100um.
Further, the thickness of solder mask is 3um-50um.
Compared to existing technology, the beneficial effects of the utility model are：A kind of structure and its system of suitable upside-down mounting COB are provided
Make method, substitute conventional LED chip formal dress mode, without gold thread, direct chip attachment on substrate, improve radiating, light extraction efficiency,
Stability.
Brief description of the drawings
Fig. 1 is the longitudinal section of upside-down mounting COB substrates of the present utility model；
Fig. 2 is the top view one of upside-down mounting COB substrates of the present utility model；
Fig. 3 is the top view of electrode pad of the present utility model；
Fig. 4 is the top view two of upside-down mounting COB substrates of the present utility model；
Fig. 5 is the structural representation of the jigsaw of upside-down mounting COB substrates of the present utility model.
In figure：001st, V-type groove；01st, substrate layer；02nd, insulating barrier；03rd, adhesive layer；04th, line layer；05th, pad layer；
050th, reserved area；051st, electrode pad；052nd, external pad；06th, solder mask；07th, box dam mark point；08th, pin.
Specific embodiment
Below, with reference to accompanying drawing and specific embodiment, the utility model is described further：
Upside-down mounting COB substrates, as shown in Figures 1 to 4, including substrate layer 01, adhesive layer 03, line layer 04, the and of pad layer 05
Solder mask 06；
The substrate layer 01 is aluminium base layer, and the thickness of substrate layer 01 is 0.3mm-2mm；The comprehensive periphery of substrate layer 01 sets
There is a layer insulating 02, specifically, the top surface of substrate layer 01, bottom surface and side wall are equipped with insulating barrier 02；The insulating barrier 02 is
Alumina insulating layer, the thickness of insulating barrier 02 is 20um-70um；The insulating barrier 02 has the characteristics of insulating properties is strong, adhesive force is strong.
Line layer 04 is bonded in the top surface of the insulating barrier 02 of the top surface of substrate layer 01 by adhesive layer 03；Adhesive layer 03 for wait from
Sub- ti interlayer, thickness is 1um-5um；Line layer 04 is copper foil circuit layer, and required circuit is etched on Copper Foil, forms line
Road floor 04, the thickness of line layer 04 is 10um-100um.
The top surface of line layer 04 is provided with first area and second area, and first area is the default area for needing and being electrically connected with
Domain, second area is to preset the region for needing electric insulation；First area is provided with pad layer 05, and second area is provided with solder mask
06；The pad layer 05 includes the electrode pad 051 of the pin 08 of the LED chip for connecting outside and for connecting outside
The external pad 052 of circuit；The electrode pad 051 includes P poles pad and N poles pad, is set between P poles pad and N poles pad
There is reserved area 050, reserved area 050 is not carry out welding resistance in white space, reserved area 050.Reserved area 050 is used to keep away
Exempt from LED chip it is padded and influence welding quality increase product failure risk because spacing very little between LED chip pad, and spray
Solder mask has error, if carrying out welding resistance to reserved area 050, welding resistance white oil may be sprayed on pad, will be during welding
Chip is padded so as to influence welding quality.The thickness of solder mask 06 is 3um-50um.
The electrode pad 051 is provided with pin 08；Pin 08 is connected by scolding tin and electrode pad 051.Electrode pad
The area of 051 cross section 1%-20% bigger than the cross-sectional area of pin 08；Because exist when placing LED chip missing
Difference, might have certain deviation, and the cross section of electrode pad 051 is more slightly larger than the cross section of pin 08, and scolding tin can fully wrapped around pin
08, welding quality can be improved, also will not greatly cause very much LED chip to shift because of electrode pad 051.
The cross-sectional area of the line layer 04 is more than the 30% of the cross-sectional area of substrate layer 01, can improve radiating
Ability.
The solder mask 06 is high reflection material, and the thickness of solder mask 06 is 3-50um；Solder mask 06 can be to LED chip
The light for sending is reflected and is carried out insulation protection to line layer 04.
Two box dam mark points 07 are set on solder mask 06, for positioning box dam central point, two during subsequent production
The midpoint of the individual line of box dam mark point 07 is box dam central point.
In the present embodiment, the cross section of substrate layer 01 is rectangle, and any two of the rectangle is diagonally removed shape
Into a breach for arc, the breach is used for the fixed screw in application.
The present embodiment chooses one piece of larger substrate layer 01 in actual production, sets multiple viscous on the substrate layer 01
Close layer 03, line layer 04, pad layer 05 and solder mask 06；A jigsaw comprising multiple upside-down mounting COB substrates is ultimately formed, is such as schemed
Shown in 5；Depth is provided with for 0.05mm- by V-cut techniques on substrate layer 01 between two neighboring upside-down mounting COB substrates
The V-type groove 001 of 0.5mm, to discharge thermal stress of the upside-down mounting COB substrates in production, when placing subsequent production baking, base material
The thermal expansion coefficients of layer 01 and insulating barrier 02 are different and cause substrate layer 01 to bend.Fallen at a certain angle of the jigsaw
Angle is processed, and cuts off some angle, so as to distinguish the direction of substrate layer 01 during subsequent production to producers' mark.The jigsaw
In actual applications, being removed single upside-down mounting COB substrates by V-type groove 001 carries out practical application.
Method for manufacturing above-mentioned upside-down mounting COB substrates is comprised the following steps：
Step 101, one piece of substrate layer of selection；The substrate layer is aluminium base layer, and the thickness of substrate layer is 0.3mm-2mm；
Step 102, comprehensive oxidation is carried out in substrate layer, the top surface, bottom surface and side wall in substrate layer are respectively formed one layer of oxygen
Change aluminum insulation layer；
Step 103, substrate layer top surface insulating barrier top surface with plasma spraying techniques make one layer of adhesive layer, institute
Adhesive layer is stated for plasma ti interlayer, thickness is 1um-5um；
Step 104, adhesive layer top surface carry out copper plating be respectively formed one layer of copper foil layer, needs are etched on copper foil layer
Circuit, forms line layer；
Step 105, the first area on line layer set pad layer；Turmeric, electricity silver, spray tin etc. are carried out to pad layer
Reason, improves the oxidation resistance and solderability of pad layer；The pad layer includes the electricity of the LED chip pin for connecting outside
Pole pad and the external pad for connecting the circuit of outside；Reserved in the periphery of pad layer and expose at least circuit of 0.1mm
Layer, it is to avoid LED chip vacantly causes the product reliability to reduce because be when making exposed after spraying solder mask come line
Road floor region sprays solder mask and there is error as pad, if not reserving the line layer of certain area outside pad layer region, spray
When the solder mask of painting has error, the size for exposing the pad layer for coming may not be inconsistent with design size.
Step 106, the second area on line layer coat highly reflective material to form solder mask；The solder mask 06
It is high reflection material, the thickness of solder mask 06 is 3-50um；The light that solder mask 06 can send to LED chip reflected and
Insulation protection is carried out to line layer.
Step 107, silk-screen both positive and negative polarity symbol and/or logo characters are carried out on solder mask 6, box dam mark point is set, it is right
Substrate layer carries out V-cut, stamping or gong plate, finally gives required substrate layer shape；The angle of the V-cut knives be 10 ° and-
70°。
The utility model provides a kind of structure of suitable upside-down mounting COB and preparation method thereof, substitutes conventional LED chip formal dress side
Formula, without gold thread, direct chip attachment improves radiating, light extraction efficiency, stability on substrate, and substrate includes substrate layer 01, insulation
Layer 02, adhesive layer 03, line layer 04, solder mask 06 and pad layer 05.
During flip LED chips, on substrate, such combination can be very good to improve heat-sinking capability direct chip attachment,
So that thermal resistance is relatively low；The light that chip sends improves light extraction efficiency from top transparent Sapphire Substrate outgoing, have better performance and
Reliability.Compared with forward LED, flip LED also has simpler encapsulation process, lower packaging cost, encapsulation higher
The advantages such as yields.
It will be apparent to those skilled in the art that technical scheme that can be as described above and design, make other various
It is corresponding to change and deformation, and all these change and deformation should all belong to the protection of the utility model claim
Within the scope of.
Claims (8)
1. upside-down mounting COB substrates, it is characterised in that including substrate layer, upper insulating barrier, adhesive layer, line layer, pad layer and welding resistance
Layer；The top surface of substrate layer is provided with insulating barrier, and line layer is bonded in the top surface of upper insulating barrier by adhesive layer；
Line layer top surface is provided with first area and second area, and first area is provided with pad layer, and second area is provided with solder mask；
Pad layer includes the electrode pad of the pin for connecting external LED chip and the external pad for connecting the circuit of outside；
The cross-sectional area of the line layer is more than the 30% of the cross-sectional area of substrate layer.
2. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that electrode pad includes P poles pad and N poles pad, P
Reserved area is provided between pole pad and N poles pad.
3. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that the bottom surface of substrate layer is provided with lower insulating barrier.
4. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that the thickness of substrate layer is 0.3mm-2mm.
5. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that the thickness of upper insulating barrier is 20um-70um.
6. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that the thickness of adhesive layer is 1um-5um.
7. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that the thickness of line layer is 10um-100um.
8. upside-down mounting COB substrates as claimed in claim 1, it is characterised in that the thickness of solder mask is 3um-50um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404314.9U CN206312923U (en) | 2016-12-20 | 2016-12-20 | Upside-down mounting COB substrates |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621404314.9U CN206312923U (en) | 2016-12-20 | 2016-12-20 | Upside-down mounting COB substrates |
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| Publication Number | Publication Date |
|---|---|
| CN206312923U true CN206312923U (en) | 2017-07-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621404314.9U Active CN206312923U (en) | 2016-12-20 | 2016-12-20 | Upside-down mounting COB substrates |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107504380A (en) * | 2017-08-22 | 2017-12-22 | 广东欧曼科技股份有限公司 | A kind of flexible LED lamp plate |
| CN108878391A (en) * | 2018-06-07 | 2018-11-23 | 珠海格力电器股份有限公司 | Intelligent power module structure and its manufacturing method |
| CN109257872A (en) * | 2018-10-23 | 2019-01-22 | 广东晶科电子股份有限公司 | A kind of Mini LED module and preparation method thereof |
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
| CN112969311A (en) * | 2021-01-29 | 2021-06-15 | 广东浩轩光电有限公司 | Processing technology of CSPLED mounted planting type substrate |
| CN115020393A (en) * | 2022-06-22 | 2022-09-06 | 江西煜明智慧光电股份有限公司 | Fluorescent powder-free multi-primary-color LED packaging structure |
-
2016
- 2016-12-20 CN CN201621404314.9U patent/CN206312923U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107504380A (en) * | 2017-08-22 | 2017-12-22 | 广东欧曼科技股份有限公司 | A kind of flexible LED lamp plate |
| CN108878391A (en) * | 2018-06-07 | 2018-11-23 | 珠海格力电器股份有限公司 | Intelligent power module structure and its manufacturing method |
| CN109257872A (en) * | 2018-10-23 | 2019-01-22 | 广东晶科电子股份有限公司 | A kind of Mini LED module and preparation method thereof |
| CN109257872B (en) * | 2018-10-23 | 2024-03-26 | 广东晶科电子股份有限公司 | Mini LED module and manufacturing method thereof |
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
| CN112969311A (en) * | 2021-01-29 | 2021-06-15 | 广东浩轩光电有限公司 | Processing technology of CSPLED mounted planting type substrate |
| CN115020393A (en) * | 2022-06-22 | 2022-09-06 | 江西煜明智慧光电股份有限公司 | Fluorescent powder-free multi-primary-color LED packaging structure |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 510000 Room 201, building A4, No. 11, Kaiyuan Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Silicon energy photoelectric semiconductor (Guangzhou) Co.,Ltd. Address before: 510000 second floor, building A4, No. 11, Kaiyuan Avenue, Science City, Guangzhou Development Zone, Guangzhou, Guangdong Patentee before: GUANGZHOU LEDTEEN OPTOELECTRONICS Co.,Ltd. |