CN209981212U - Display device and display module - Google Patents
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- CN209981212U CN209981212U CN201920699796.2U CN201920699796U CN209981212U CN 209981212 U CN209981212 U CN 209981212U CN 201920699796 U CN201920699796 U CN 201920699796U CN 209981212 U CN209981212 U CN 209981212U
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Abstract
The display device comprises a flip chip and a substrate, wherein the substrate comprises a first bonding pad layer, a second line layer, a third line layer and a fourth bonding pad layer, the flip chip is attached to the first bonding pad layer, and the line connection and the circuit logic of the substrate are realized in the second line layer and the third line layer. The display module comprises a plurality of display devices arranged on the back plate, each independent display device forming the display module comprises a plurality of pixel points, and the pixel points are arranged on the substrate at equal intervals. The display device is high in reliability, small in gap and small in pixel point distance, the display module can achieve high-definition display, the surface is smooth, the appearance is consistent, the consistency of visual effect is good, and high-definition display is achieved.
Description
[ technical field ] A method for producing a semiconductor device
The application relates to the field of display, in particular to an LED display device and a display module.
[ background of the invention ]
In the existing display module, a display device of the existing display module consists of a packaging bracket 110, a normally-mounted chip 120, a die attach adhesive, a gold wire 130 and a black adhesive; in the display device, three normal chips are bonded in a package support through die attach adhesives, and then electrodes of the chips and conductive pins 140 of the package support are connected through gold wires to realize conductive connection, as shown in fig. 1; such a display device has a structure resembling a rectangular parallelepiped. The existing display device and the module thereof can realize the pixel point spacing of more than 1.0 mm;
in the prior art, the display device adopts a normally-installed chip, and a gold wire is required to realize conductive connection, but the mode has low efficiency and is easy to cause disconnection failure, so the reliability of the device is low; the conductive pins of the packaging bracket used by the display device are positioned outside the packaging bracket and exposed outside, so the packaging bracket is easy to oxidize and has poor reliability; the display devices are not regular cuboids in appearance, and after the display modules are spliced, gaps among the display devices are large, namely, the pixel point spacing is large, and the definition is low; the conductive pins of the packaging support of the display device are uneven, and after the packaging support is spliced into a display module, the surface flatness is low, and the visual consistency is poor.
Therefore, it is necessary to provide a highly reliable chip, and thus a display device with a small pixel pitch and high definition, and a display module with high flatness and high visual uniformity.
[ summary of the invention ]
The present application aims to provide a display device with a small pixel pitch and high definition.
Another objective of the present application is to provide a display module with high visual uniformity.
In order to realize the purpose of the application, the following technical scheme is provided:
the application provides a display device, it includes flip chip and base plate, the base plate includes first pad layer, second line layer, third line layer, fourth pad layer, flip chip pastes the dress on first pad layer, be equipped with the insulating layer between first pad layer, second line layer, third line layer, the fourth pad layer, this first pad layer and second pad layer set up the pad face of connecting flip chip and following backplate, and the line connection and the circuit logic of this base plate realize in second line layer and third line layer.
In some embodiments, the display device further comprises a layer of black glue coated on the substrate, wherein the black glue comprises transparent glue, nano-scale black particles and nano-scale particle additives.
In some embodiments, the display device includes uniformly arranged pixel dots, and each pixel dot includes a flip chip with three colors of red, green, and blue.
In some embodiments, the arrangement of the bonding pads of the first bonding pad layer of the substrate is a matrix arrangement, or an equilateral triangle or a circle arrangement, and the bonding pads of the fourth bonding pad layer are arranged near the periphery of the substrate.
In some embodiments, the display device has a regular rectangular parallelepiped shape.
The present application also provides a method of manufacturing a display device, which includes the steps of:
(1) coating solder on the first pad layer of the substrate in batch, wherein the dosage of the solder is equivalent to the size of the electrode of the flip chip;
(2) placing flip chips on the solder in batches, wherein the positive electrode of each flip chip is connected with the positive bonding pad on the first bonding pad layer of the substrate, and the negative electrode of each flip chip is connected with the negative bonding pad on the first bonding pad layer of the substrate;
(3) placing the substrate coated with the solder and placed with the flip chip in a high-temperature furnace for heating, wherein the temperature in the high-temperature furnace is higher than the melting point of the high-temperature solder alloy; the high temperature furnace can be electroheating or photothermal; after the high-temperature solder is melted, welding the flip chip and the first pad layer of the substrate together to form conductive connection;
(4) stirring and mixing the nano black particles, the transparent glue and the nano granular additives uniformly at a high speed (the stirring speed is about 1200rpm) under a vacuum condition to form black glue; coating the black glue on the welded substrate; leveling the surface of the black rubber in a mould pressing mode, a scraping mode or a grinding mode; curing the black glue at 150 ℃;
(5) and cutting and separating the semi-finished products along the middle line of the adjacent single display device to finish the batch manufacturing of the display device.
In some embodiments, the solder in step (1) is a high temperature solder, the alloy melting point of the solder is higher than 200 ℃; the solder can be coated by one or more of spot coating, spraying and printing.
In some embodiments, the method for manufacturing a substrate includes the steps of:
(1) pressing two copper foils and an insulating material to prepare a double-sided copper-clad plate, wherein the double-sided copper-clad plate is arranged in the display device and forms a copper foil of a second circuit layer, an insulating layer and a copper foil of a third circuit layer of the substrate;
(2) penetrating an upper layer copper foil, an insulating layer and a lower layer copper foil of a double-sided copper-clad plate through a through hole;
(3) electroplating copper in the through hole of the copper-clad plate in an electroplating mode to enable the upper layer copper foil and the lower layer copper foil of the double-sided copper-clad plate to realize conductive connection;
(4) etching the unnecessary copper foils on the upper copper foil and the lower copper foil of the double-sided copper-clad plate through chemical displacement reaction, and reserving the required lower circuit to finish the manufacture of a second circuit layer and a third circuit layer;
(5) respectively laminating an insulating layer and copper foils on the upper side and the lower side of the semi-finished product substrate to form a copper foil of a first bonding pad layer and a copper foil of a fourth bonding pad layer;
(6) punching holes in the copper foil of the first bonding pad layer and the copper foil of the fourth bonding pad layer, wherein the hole depth of the copper foil of the first bonding pad layer reaches the second circuit layer, and the hole depth of the copper foil of the fourth bonding pad layer reaches the third circuit layer;
(7) electroplating copper in the through hole of the semi-finished substrate in an electroplating mode to enable the copper foil of the first pad layer to be in conductive connection with the second circuit layer and enable the copper foil of the fourth pad layer to be in conductive connection with the third circuit layer;
(8) etching the copper foils which are not needed on the copper foil of the first pad layer and the copper foil of the fourth pad layer through chemical displacement reaction to finish the manufacture of the first pad layer and the fourth pad layer;
(9) and performing surface treatment on the surfaces of the first bonding pad layer and the fourth bonding pad layer, and coating a silver layer on the surfaces of the bonding pads to prevent the surfaces of the bonding pads from being oxidized.
The application also provides a display module, it includes a plurality of as above display device equidistant array mode arrange on the backplate and conductive connection, have the metal pad of equidistant matrix arrangement on this backplate, the relative position of this pad and the pad of this display device base plate correspond, contain a plurality of pixel points in every independent display device who constitutes this display module, each pixel point is with equidistant range on the base plate.
The application also provides a manufacturing method of the display module, which comprises the following steps:
(1) coating solder on the module backboard, wherein the mode of coating the solder can be one or more of spot coating, spraying and printing; the dosage of the solder is equivalent to the size of the fourth pad layer of the substrate in the display device;
(2) the display devices are arranged in an equidistant array according to the corresponding positions on the back plate;
(3) and placing the backboard and the display device in a high-temperature furnace for heating, and welding the display device and the backboard welding pad together after the medium-temperature solder is melted to form conductive connection.
In some embodiments, the solder is a medium temperature solder with a melting point below 200 ℃.
Compared with the prior art, the method has the following advantages:
the display device uses the flip chip, so that the manufacturing process efficiency is high, the problem of disconnection failure is solved, and the reliability is high; the display device is completely connected in the substrate through the circuit, and the circuit is not exposed, so that the oxidation risk is avoided, and the reliability is high; the display devices are regular cuboids, after the display modules are spliced, gaps among the display devices are small, pixel point intervals are small, high-definition display can be achieved, and the spliced display modules are smooth in surface, consistent in appearance and good in visual effect consistency; the display device, the module and the manufacturing method thereof realize high-definition display of pixel pitch below 0.8 mm.
[ description of the drawings ]
FIG. 1 is a schematic diagram of a prior art display device;
FIG. 2 is a schematic diagram of a substrate structure of a display device according to the present application;
FIG. 3 is a schematic diagram of a display device of the present application;
FIGS. 4a to 4f are schematic diagrams of pad design embodiments of a first pad layer in a display device according to the present application;
FIGS. 5 a-5 b are schematic diagrams of bonding pad design embodiments of a fourth bonding pad layer in a display device of the present application
FIGS. 6 a-6 c are diagrams of embodiments of a display device of the present application showing placement of a flip chip on a first bonding pad layer;
FIG. 7 is a flow chart of a method of fabricating a display device of the present application;
FIGS. 8 a-8 b are schematic views illustrating exemplary backplane pad designs for a display module according to the present application;
FIG. 9 is a side view of a display module according to the present application;
FIGS. 10a to 10b are schematic layout views of display devices of the display module of the present application;
fig. 11 is a flowchart illustrating a method of manufacturing a display module according to the present application.
[ detailed description ] embodiments
Referring to fig. 2 and 3, a display device 200 of the present application includes a flip chip 202 and a substrate 201, where the substrate includes a first pad layer 210, a second line layer 220, a third line layer 230, and a fourth pad layer 240, the flip chip is mounted on the first pad layer, an insulating layer 250 is disposed between the first pad layer, the second line layer, the third line layer, and the fourth pad layer, the first pad layer and the second pad layer are disposed to connect the flip chip and a pad surface of a lower backplane, and line connection and circuit logic of the substrate are implemented in the second pad layer and the third pad layer.
The display device further comprises a layer of black glue 203 coated on the substrate, wherein the black glue comprises transparent glue, nano-scale black particles and nano-scale particle additives.
The display device comprises pixel points which are uniformly distributed, and each pixel point comprises a flip chip with red, green and blue colors. All flip chips used by the display device are flip chips, and two electrodes, namely a positive electrode and a negative electrode, are arranged below the flip chips.
Referring to fig. 4a to 4f, the pad arrangement of the first pad layer 210 of the substrate is a matrix arrangement, or an equilateral triangle or circle arrangement, a symmetrical arrangement or a mirror arrangement. Referring to fig. 5a to 5b, the bonding pads of the fourth bonding pad layer 240 are arranged near the periphery of the substrate. The pads of the first pad layer 210 and the pads of the fourth pad layer 240 may have various geometric shapes such as a square, a rectangle, a circle, and a triangle.
Referring to fig. 6a to 6c, the bonding pads of the first bonding pad layer 210 are independent from each other and are not connected to each other by a circuit; in a first bonding pad layer of the substrate, every two bonding pads correspond to the position of a flip chip, every two bonding pads form a pair, one of the bonding pads is a positive electrode, the other bonding pad is a negative electrode, each bonding pad is connected with an electrode of the flip chip through high-temperature solder, a positive bonding pad of the first bonding pad layer is connected with the positive electrode of the flip chip, and a negative bonding pad of the first bonding pad layer is connected with the negative electrode of the flip chip; in the first bonding pad layer, every 6 bonding pads correspond to the position of a pixel point. The pads of the fourth pad layer 240 are independent of each other and are not connected by a circuit; the pad shapes of the first pad layer 210 and the fourth pad layer 240 may be the same or different.
Referring to fig. 7, the present application further provides a method for manufacturing a display device, which includes the following steps:
(1) coating solder on the first pad layer of the substrate in batch, wherein the dosage of the solder is equivalent to the size of the electrode of the flip chip;
(2) placing flip chips on the solder in batches, wherein the positive electrode of each flip chip is connected with the positive bonding pad on the first bonding pad layer of the substrate, and the negative electrode of each flip chip is connected with the negative bonding pad on the first bonding pad layer of the substrate;
(3) placing the substrate coated with the solder and placed with the flip chip in a high-temperature furnace for heating, wherein the temperature in the high-temperature furnace is higher than the melting point of the high-temperature solder alloy; the high temperature furnace can be electroheating or photothermal; after the high-temperature solder is melted, welding the flip chip and the first pad layer of the substrate together to form conductive connection;
(4) stirring and mixing the nano black particles, the transparent glue and the nano granular additives uniformly at a high speed (the stirring speed is about 1200rpm) under a vacuum condition to form black glue; coating the black glue on the welded substrate; leveling the surface of the black rubber in a mould pressing mode, a scraping mode or a grinding mode; curing the black glue at 150 ℃;
(5) and cutting and separating the semi-finished products along the middle line of the adjacent single display device to finish the batch manufacturing of the display device.
The solder in the step (1) is high-temperature solder, the solder comprises one of SnAgCu alloy, SnSb alloy and SnCu alloy, and the alloy melting point of the solder is higher than 200 ℃; the solder can be coated by one or more of spot coating, spraying and printing.
The manufacturing method of the substrate comprises the following steps:
(1) pressing two copper foils and an insulating material to prepare a double-sided copper-clad plate, wherein the thickness of the copper foil is 20 mu m, and the thickness of the insulating layer is 0.1 mm; the double-sided copper-clad plate is arranged in the display device, and a copper foil of a second circuit layer, an insulating layer and a copper foil of a third circuit layer of the substrate are formed;
(2) penetrating an upper layer copper foil, an insulating layer and a lower layer copper foil of a double-sided copper-clad plate through a through hole;
(3) electroplating copper in the through hole of the copper-clad plate by an electroplating mode, wherein the reaction formula is as follows: cu2+ +2e- → Cu, and filling the holes, so that the upper layer copper foil and the lower layer copper foil of the double-sided copper-clad plate are conductively connected;
(4) through chemical replacement reaction, the reaction formula is as follows: 2FeCl3+ Cu is CuCl2+ +2FeCl2, unnecessary copper foils on the upper layer copper foil and the lower layer copper foil of the double-sided copper-clad plate are etched away, a required lower circuit is reserved, and the second circuit layer and the third circuit layer are manufactured;
(5) respectively laminating an insulating layer and copper foils on the upper side and the lower side of the semi-finished product substrate to form a copper foil of a first bonding pad layer and a copper foil of a fourth bonding pad layer; the thickness of the copper foil is 20 um;
(6) punching holes in the copper foil of the first bonding pad layer and the copper foil of the fourth bonding pad layer, wherein the hole depth of the copper foil of the first bonding pad layer reaches the second circuit layer, and the hole depth of the copper foil of the fourth bonding pad layer reaches the third circuit layer;
(7) electroplating copper in the through hole of the semi-finished product substrate in an electroplating mode, wherein the reaction formula is as follows: cu2+ +2e- → Cu, and filling the holes, so that the copper foil of the first pad layer is in conductive connection with the second circuit layer, and the copper foil of the fourth pad layer is in conductive connection with the third circuit layer;
(8) through chemical replacement reaction, the reaction formula is as follows: 2FeCl3+ Cu is CuCl2+ +2FeCl2, unnecessary copper foils on the first pad layer copper foil and the fourth pad layer copper foil are etched, and the first pad layer and the fourth pad layer are manufactured;
(9) performing surface treatment on the surfaces of the first bonding pad layer and the fourth bonding pad layer, and coating a silver layer on the surfaces of the bonding pads, wherein the thickness of the silver layer is 0.1-0.5 um; the pad surface is prevented from being oxidized.
Referring to fig. 8a, 8b, 9, 10a and 10b, the present application further provides a display module, which includes a plurality of display devices 200 arranged on a backplane 302 in an equidistant array manner and electrically connected to the backplane, the backplane having metal pads 301 arranged in an equidistant matrix, the pads corresponding to the pads of the substrate of the display device, each individual display device constituting the display module including a plurality of pixels, each pixel being arranged on the substrate at an equal interval. The individual display devices 200 in a batch are arranged in an equally spaced array on the backplane 302 and electrically connected by a medium temperature solder.
The back plate 302 is provided with metal pads 301 which are arranged in an equal-interval matrix, and the relative positions of the pads correspond to the relative positions of the pads of the fourth pad layer of the substrate of the display device 200 one by one; each independent display device forming the display module comprises a plurality of pixel points, and the pixel points are arranged on the substrate at equal intervals; the single substrate used by the single display device is arranged on the whole back plate in an equal-interval array;
referring to fig. 11, the present application further provides a method for manufacturing a display module, which includes the following steps:
(1) coating solder on the module backboard, wherein the mode of coating the solder can be one or more of spot coating, spraying and printing; the dosage of the solder is equivalent to the size of the fourth pad layer of the substrate in the display device;
(2) the display devices are arranged in an equidistant array according to the corresponding positions on the back plate;
(3) heating the back plate and the display device in a high-temperature furnace, wherein the temperature in the high-temperature furnace is higher than the melting point of the medium-temperature solder alloy but lower than 200 ℃; the high temperature furnace can be electroheating or photothermal; and after the medium-temperature solder is melted, welding the display device and the backboard welding pad together to form conductive connection.
Wherein the solder is medium-temperature solder, and the melting point is lower than 200 ℃.
One of the specific embodiments is as follows:
(1) pressing two copper foils and an insulating material to prepare a double-sided copper-clad plate, wherein the thickness of the copper foil is 20 mu m, and the thickness of the insulating layer is 0.1 mm; the double-sided copper-clad plate is arranged in the display device, and a copper foil of a second circuit layer, an insulating layer and a copper foil of a third circuit layer of the substrate are formed;
(2) penetrating an upper layer copper foil, an insulating layer and a lower layer copper foil of a double-sided copper-clad plate through a through hole;
(3) electroplating copper in the through hole of the copper-clad plate by an electroplating mode, wherein the reaction formula is as follows: cu2+ +2e- → Cu, and filling the holes, so that the upper layer copper foil and the lower layer copper foil of the double-sided copper-clad plate are conductively connected;
(4) through chemical replacement reaction, the reaction formula is as follows: 2FeCl3+ Cu is CuCl2+ +2FeCl2, unnecessary copper foils on the upper layer copper foil and the lower layer copper foil of the double-sided copper-clad plate are etched away, a required lower circuit is reserved, and the second circuit layer and the third circuit layer are manufactured;
(5) respectively laminating an insulating layer and copper foils on the upper side and the lower side of the semi-finished product substrate to form a copper foil of a first bonding pad layer and a copper foil of a fourth bonding pad layer; the thickness of the copper foil is 20 um;
(6) punching holes in the copper foil of the first bonding pad layer and the copper foil of the fourth bonding pad layer, wherein the hole depth of the copper foil of the first bonding pad layer reaches the second circuit layer, and the hole depth of the copper foil of the fourth bonding pad layer reaches the third circuit layer;
(7) electroplating copper in the through hole of the semi-finished product substrate in an electroplating mode, wherein the reaction formula is as follows: cu2+ +2e- → Cu, and filling the holes, so that the copper foil of the first pad layer is in conductive connection with the second circuit layer, and the copper foil of the fourth pad layer is in conductive connection with the third circuit layer;
(8) through chemical replacement reaction, the reaction formula is as follows: 2FeCl3+ Cu is CuCl2+ +2FeCl2, unnecessary copper foils on the first pad layer copper foil and the fourth pad layer copper foil are etched, and the first pad layer and the fourth pad layer are manufactured;
(9) performing surface treatment on the surfaces of the first bonding pad layer and the fourth bonding pad layer, and coating a silver layer on the surfaces of the bonding pads, wherein the thickness of the silver layer is 0.1-0.5 um; the pad surface is prevented from being oxidized.
(10) Printing solder on the first pad layer of the whole substrate in batch, wherein the solder is high-temperature solder, the solder comprises SnAgCu alloy, and the alloy melting point of the solder is higher than 220 ℃;
(11) placing flip chips on the solder in batch, wherein the positive electrode of the flip chips is connected with the positive bonding pad of the first bonding pad layer of the substrate, the negative electrode of the flip chips is connected with the negative bonding pad of the first bonding pad layer of the substrate, and the arrangement mode of the flip chips is shown in fig. 6 a;
(12) placing the substrate printed with the solder and placed with the flip chip in a high-temperature furnace at 245 ℃ for heating, and welding the flip chip and the first pad layer of the substrate together to form conductive connection after the high-temperature solder is melted;
(13) stirring and mixing the nano black particles, the transparent glue and the nano granular additives uniformly at a high speed (the stirring speed is about 1200rpm) under a vacuum condition to form black glue; coating the black glue on the welded substrate; leveling the surface of the black rubber in a mould pressing mode, a scraping mode or a grinding mode; curing the black glue at 150 ℃;
(14) cutting and separating the semi-finished products along the middle line of the adjacent single display device to finish the batch manufacturing of the display device;
(15) printing solder on the module backboard, wherein the solder is medium-temperature solder and has a melting point of 180 ℃;
(16) the display devices are arranged in an equidistant array according to corresponding positions on the back plate;
(17) heating the backboard and the display device in a high-temperature furnace, wherein the temperature in the high-temperature furnace is 200 ℃; welding the display device and the backboard welding pad together to form conductive connection;
the second embodiment is as follows:
(1) pressing two copper foils and 1 insulating material to prepare a double-sided copper-clad plate, wherein the thickness of the copper foil is 20 mu m, and the thickness of the insulating layer is 0.1 mm;
(2) penetrating the upper copper foil, the insulating layer and the lower copper foil of the double-sided copper-clad plate through holes;
(3) electroplating copper in the through hole of the copper-clad plate, and filling the hole to enable the upper layer copper foil and the lower layer copper foil to realize conductive connection;
(4) etching the unnecessary copper on the upper layer copper foil and the lower layer copper foil, and reserving the required lower circuit to finish the manufacture of the second circuit layer and the third circuit layer;
(5) respectively laminating an insulating layer and copper foils on the upper side and the lower side of the semi-finished product substrate to form a copper foil of the first pad layer and a copper foil of the fourth pad layer, wherein the thickness of the copper foils is 20 mu m;
(6) punching holes on the first pad layer copper foil and the fourth pad layer copper foil, wherein the hole depth on the first pad layer copper foil reaches the second circuit layer, and the hole depth on the fourth pad layer copper foil reaches the third circuit layer;
(7) electroplating copper in the through hole of the semi-finished substrate, and filling the hole to ensure that the copper foil of the first pad layer is in conductive connection with the second circuit layer and the copper foil of the four pad layers is in conductive connection with the third circuit layer;
(8) etching the copper foils which are not needed on the first pad layer copper foil and the fourth pad layer copper foil to finish the manufacture of the first pad layer and the fourth pad layer;
(9) performing surface treatment on the surfaces of the first bonding pad layer and the fourth bonding pad layer, and coating a silver layer on the surfaces of the bonding pads, wherein the thickness of the silver layer is 0.1-0.5 um;
(10) printing solder on the first pad layer of the whole substrate in batch, wherein the solder is high-temperature solder, the solder comprises SnAgCu alloy, and the alloy melting point of the solder is higher than 220 ℃;
(11) placing flip chips on the solder in batch, wherein the positive electrode of the flip chips is connected with the positive bonding pad of the first bonding pad layer of the substrate, the negative electrode of the flip chips is connected with the negative bonding pad of the first bonding pad layer of the substrate, and the arrangement mode of the flip chips is shown in fig. 6 c;
(12) placing the substrate printed with the solder and placed with the flip chip in a high-temperature furnace at 245 ℃ for heating, and welding the flip chip and the first pad layer of the substrate together to form conductive connection after the high-temperature solder is melted;
(13) stirring and mixing the nano black particles, the transparent glue and the nano granular additives uniformly at a high speed (the stirring speed is about 1200rpm) under a vacuum condition to form black glue; coating the black glue on the welded substrate; leveling the surface of the black rubber in a mould pressing mode, a scraping mode or a grinding mode; curing the black glue at 150 ℃;
(14) cutting and separating the semi-finished products along the middle line of the adjacent single display device to finish the batch manufacturing of the display device, as shown in fig. 7;
(15) printing solder on the module backboard, wherein the solder is medium-temperature solder and has a melting point of 180 ℃;
(16) the display devices are arranged in an equidistant array according to corresponding positions on the back plate; heating the backboard and the display device in a high-temperature furnace, wherein the temperature in the high-temperature furnace is 200 ℃; and welding the display device and the backboard welding pad together to form conductive connection.
The above description is only a preferred embodiment of the present application, and the protection scope of the present application is not limited thereto, and any equivalent changes based on the technical solutions of the present application are included in the protection scope of the present application.
Claims (5)
1. The utility model provides a display device, its characterized in that, it includes flip chip and base plate, the base plate includes first pad layer, second circuit layer, third circuit layer, fourth pad layer, flip chip pastes the dress on first pad layer, be equipped with the insulating layer between first pad layer, second circuit layer, third circuit layer, the fourth pad layer, this first pad layer and second pad layer set up the pad face of connecting flip chip and backplate below, and the line connection and the circuit logic of this base plate realize in second circuit layer and third circuit layer.
2. The display device of claim 1, further comprising a layer of black glue coated on the substrate, the black glue comprising clear glue, nano-scale black particles, nano-scale particulate additives.
3. The display device of claim 1, wherein the display device comprises a uniform arrangement of pixels, each pixel comprising a red, green, and blue color flip chip.
4. The display device of claim 1, wherein the first bonding pad layer of the substrate is arranged in a matrix or an equilateral triangle or a circle, and the bonding pads of the fourth bonding pad layer are arranged near the periphery of the substrate.
5. A display module, characterized in that, it includes a plurality of display devices according to any claim 1-4 arranged on the backboard in the manner of equidistant array and connected in an electric conduction manner, the backboard has metal pads arranged in the manner of equidistant matrix, the relative position of the pads corresponds to the pads of the display device substrate, each individual display device composing the display module includes a plurality of pixel points, each pixel point is arranged on the substrate in the manner of equidistant.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920699796.2U CN209981212U (en) | 2019-05-16 | 2019-05-16 | Display device and display module |
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| CN201920699796.2U CN209981212U (en) | 2019-05-16 | 2019-05-16 | Display device and display module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
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