CN104538538A - Flip chip support and LED packaging process - Google Patents
Flip chip support and LED packaging process Download PDFInfo
- Publication number
- CN104538538A CN104538538A CN201410813660.1A CN201410813660A CN104538538A CN 104538538 A CN104538538 A CN 104538538A CN 201410813660 A CN201410813660 A CN 201410813660A CN 104538538 A CN104538538 A CN 104538538A
- Authority
- CN
- China
- Prior art keywords
- chip
- flip
- support
- bonding area
- capillary structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Abstract
The invention discloses a flip chip support and an LED packaging process. The flip chip support comprises a support body, wherein the support body is provided with a die bonding region, and the surface of the die bonding region is provided with a capillary structure made through the gaseous phase forming process. The LED packaging process comprises the steps that the capillary structure is made, solder paste is dotted, a chip is placed, and reflow soldering is conducted. The support of the structure and the packaging process can make flowing of the solder paste more uniform, reduce the amount of the solder paste flowing out of the die bonding region, reduce the porosity of the solder paste and make the chip fixed firmly and good in electric conductivity and heat-conducting property.
Description
Technical field
The present invention relates to the packaging technology of LED chip support and LED, especially flip LED chips support.
Background technology
At present, chip mainly contains two kinds, and one is positive cartridge chip, and one is flip-chip, and positive cartridge chip is mainly used to encapsulate low power LED, and flip-chip is mainly used to the LED of packaged high-power.Because the electrode of positive cartridge chip is arranged on front, electrode can shelter from part bright dipping, can affect light emission rate, and therefore, the application of present flip-chip is more and more extensive.
The fixing of flip-chip normally passes through at the crystal bonding area of support point tin cream, then flip-chip is attached on support, make the electrode of flip-chip corresponding with tin cream, realize fixing through Reflow Soldering, as at application number be 201410076151.5 patent documentation in disclose the method for packing of a kind of LED.Adopt in this way, because crystal bonding area is generally light face, therefore, when through Reflow Soldering, tin cream can be caused to flow uneven, tin cream easily flows out crystal bonding area on rack body, after Reflow Soldering completes, the phenomenon that tin cream porosity is large can be produced, like this, not only flip-chip is fixing insecure, and can affect electrical property and heat conductivility.
Summary of the invention
In order to make the flowing of tin cream more even, reducing tin cream and flowing out crystal bonding area, reducing the porosity of tin cream, the invention provides a kind of flip-chip support.
In order to improve the fixing fastness of chip, improving electric conductivity and heat conductivility, the invention provides the packaging technology of a kind of LED.
For reaching above-mentioned first object, a kind of flip-chip support, comprises rack body, rack body is provided with die bond; The surface of crystal bonding area is provided with the capillary structure formed by gas phase moulding process.
The support of said structure, owing to being provided with capillary structure on crystal bonding area, like this, in reflow process, the flowing of tin cream is more even, and tin cream not easily flows out crystal bonding area, after Reflow Soldering completes, the porosity of detection tin cream is little, therefore, the fixation of flip-chip, the conducting electricity very well of flip-chip, good heat conductivity.
Further, between the edge of capillary structure and rack body, be formed with line of demarcation, effectively can reduce tin cream and flow out crystal bonding area.
For reaching above-mentioned second object, the packaging technology of a kind of LED, first shaped support, its method is: on the crystal bonding area of flip-chip support, make capillary structure by gas phase moulding process; Then on crystal bonding area, put tin cream, then by the electrode alignment crystal bonding area of flip-chip, and flip-chip is placed on support, finally by Reflow Soldering, flip-chip and support is fixed up.
The packaging technology of above-mentioned LED, owing to being provided with capillary structure in crystal bonding area, like this, in reflow process, the flowing of tin cream is more even, and tin cream not easily flows out crystal bonding area, after Reflow Soldering completes, the porosity of detection tin cream is little, therefore, the fixation of flip-chip, the conducting electricity very well of flip-chip, good heat conductivity.
Further, when shaping capillary structure, between the edge of capillary structure and rack body, form line of demarcation, effectively can reduce tin cream and flow out crystal bonding area.
Accompanying drawing explanation
Fig. 1 is the vertical view of flip-chip support.
Fig. 2 is A-A cutaway view in Fig. 1.
Fig. 3 is the schematic diagram of LED.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated.
As depicted in figs. 1 and 2, flip-chip support comprises rack body 1, and rack body 1 is provided with crystal bonding area 2; The surface of crystal bonding area 2 is provided with the capillary structure formed by gas phase moulding process.Line of demarcation is formed between the edge of capillary structure and rack body.
As shown in Figure 3, LED comprises above-mentioned flip-chip support, tin paste layer 4 and chip 3, and chip 3 is fixed on flip-chip support by tin paste layer 4.
The packaging technology of LED is: first shaped support, its method is: on the crystal bonding area 2 of flip-chip support, make capillary structure by gas phase moulding process, when shaping capillary structure, between the edge of capillary structure and rack body, form line of demarcation, can effectively prevent tin cream from flowing out crystal bonding area 2; Then on crystal bonding area 2, put tin cream, then by electrode alignment die bond 2 district of flip-chip, and flip-chip is placed on support, finally by Reflow Soldering, flip-chip and support is fixed up.
The support of said structure and packaging technology, owing to being provided with capillary structure on crystal bonding area 2, like this, in reflow process, the flowing of tin cream is more even, and tin cream not easily flows out crystal bonding area, after Reflow Soldering completes, the porosity of detection tin cream is little, therefore, the fixation of flip-chip, the conducting electricity very well of flip-chip, good heat conductivity.
Claims (4)
1. a flip-chip support, comprises rack body, and rack body is provided with crystal bonding area; It is characterized in that: on the surface of crystal bonding area, be provided with the capillary structure formed by gas phase moulding process.
2. flip-chip support according to claim 1, is characterized in that: be formed with line of demarcation between the edge of capillary structure and rack body.
3. a packaging technology of LED, is characterized in that: first shaped support, and its method is: on the crystal bonding area of flip-chip support, make capillary structure by gas phase moulding process; Then on crystal bonding area, put tin cream, then by the electrode alignment crystal bonding area of flip-chip, and flip-chip is placed on support, finally by Reflow Soldering, flip-chip and support is fixed up.
4. the packaging technology of LED according to claim 3, is characterized in that: when shaping capillary structure, forms line of demarcation between the edge of capillary structure and rack body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410813660.1A CN104538538A (en) | 2014-12-24 | 2014-12-24 | Flip chip support and LED packaging process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410813660.1A CN104538538A (en) | 2014-12-24 | 2014-12-24 | Flip chip support and LED packaging process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538538A true CN104538538A (en) | 2015-04-22 |
Family
ID=52854035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410813660.1A Pending CN104538538A (en) | 2014-12-24 | 2014-12-24 | Flip chip support and LED packaging process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104538538A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224279A1 (en) * | 2006-10-18 | 2009-09-10 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of manufacturing optical semiconductor device |
| CN103337583A (en) * | 2013-06-26 | 2013-10-02 | 深圳雷曼光电科技股份有限公司 | LED inverted structure and inversion process |
| CN203406326U (en) * | 2013-07-30 | 2014-01-22 | 简稚文 | A light emitting diode with a special support structure |
| CN103811633A (en) * | 2013-12-31 | 2014-05-21 | 深圳市斯迈得光电子有限公司 | High-reliability light emitting diode support |
-
2014
- 2014-12-24 CN CN201410813660.1A patent/CN104538538A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090224279A1 (en) * | 2006-10-18 | 2009-09-10 | Kabushiki Kaisha Toshiba | Optical semiconductor device and method of manufacturing optical semiconductor device |
| CN103337583A (en) * | 2013-06-26 | 2013-10-02 | 深圳雷曼光电科技股份有限公司 | LED inverted structure and inversion process |
| CN203406326U (en) * | 2013-07-30 | 2014-01-22 | 简稚文 | A light emitting diode with a special support structure |
| CN103811633A (en) * | 2013-12-31 | 2014-05-21 | 深圳市斯迈得光电子有限公司 | High-reliability light emitting diode support |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Applicant after: Hongli Newell group Limited by Share Ltd Address before: Huadu District, Guangdong city of Guangzhou Province, 510800 East Town Airport high-tech industrial base and SAST Jingu South Road intersection Applicant before: Guangzhou Hongli Tronic Co., Ltd. |
|
| COR | Change of bibliographic data | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150422 |
|
| RJ01 | Rejection of invention patent application after publication |