CN202839737U - Infrared COB light source module - Google Patents
Infrared COB light source module Download PDFInfo
- Publication number
- CN202839737U CN202839737U CN2012205057799U CN201220505779U CN202839737U CN 202839737 U CN202839737 U CN 202839737U CN 2012205057799 U CN2012205057799 U CN 2012205057799U CN 201220505779 U CN201220505779 U CN 201220505779U CN 202839737 U CN202839737 U CN 202839737U
- Authority
- CN
- China
- Prior art keywords
- infrared
- copper foil
- foil layer
- substrate
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The utility model relates to an infrared COB light source module, including a substrate and at least one group of infrared wafer arranged on the substrate. An upper surface of the substrate is provided with a copper foil layer I and a copper foil layer II, and a gap exists between the copper foil layer I and the copper foil layer II. A fixed welding point and a first electrical connection welding point are arranged on the first copper foil layer I. An electrode welding point and a second electrical connection welding point are arranged on the second copper foil layer II. The infrared wafer is fixed on the copper foil layer I. One electrode of the infrared wafer is connected with the fixed welding point. The other electrode of the infrared wafer is connected with the electrode welding point. The infrared COB light source module has the advantages that the infrared wafer is fixedly connected to the copper foil layer I arranged on the substrate, and the heat generated by the infrared wafer is transferred from the copper foil layer I to the substrate, so that the heat conduction efficiency is improved, the stability of the COB light source is improved, and the service life is increased.
Description
Technical field
The utility model relates to a kind of infrared COB light source module.
Background technology
The infrared light supply module is as a kind of a kind of version of led light source encapsulation, and existing infrared light supply is mostly by being bundled in infrared wafer encapsulated moulding on the special-purpose led support, by scolding tin the support pin being welded on and forming on the substrate again, the heat of infrared like this wafer must be led on the heat-radiating substrate by led support first again, LED work produces on the difficult substrate that sheds rapidly of heat, thereby produce excess Temperature when making LED work, reduce LED useful life, reduced result of use, poor stability.
The utility model content
The existing infrared light supply radiating effect of the technical problems to be solved in the utility model is poor, and result of use is poor, the technical problem of poor stability, thus a kind of infrared COB light source module is provided.
In order to solve the problems of the technologies described above, the utility model is achieved through the following technical solutions: a kind of infrared COB light source module, comprise substrate, at least one group of infrared wafer that is arranged on the substrate, the upper surface of described substrate is provided with copper foil layer I and the copper foil layer II that has each other the gap, described copper foil layer I is provided with fixedly pad and the first electrical connection pad, described copper foil layer II is provided with electrode welding point and the second electrical connection pad, described infrared wafer is fixed on the copper foil layer I, one utmost point of described infrared wafer is connected with fixing pad, and another utmost point of described infrared wafer is connected with electric electrode welding point.
Preferably, one extremely direct and fixedly pad welding of described infrared wafer, another utmost point of described infrared wafer is connected with electrode welding point by bonding gold wire, be provided with the elargol that infrared wafer and copper foil layer I is fixing between described infrared wafer and the copper foil layer I, described infrared wafer and bonding gold wire pass through the LED silica gel packaging on the copper foil layer I, elargol conducts electricity very well, adhesive property is good, bonding gold wire has good electrical conductance and hot press performance, connect reliable, result of use is good, is convenient to the fixing of infrared wafer.
Preferably, described fixedly pad is gold-plated or silver-plated pad, be convenient to the welding, electric conductivity is all right, contact resistance is low, corrosion resistance is strong.
Preferably, described copper foil layer I, copper foil layer II all are fixed on the substrate by insulating cement, and insulating cement has good electrical insulating property, and result of use is good.
Preferably, the longitudinal section of described substrate is rectangle or puts shape or circle, and described substrate is provided with at least two fixing holes, also can be for other shapes of being convenient to process, and simple in structure, result of use is good, is convenient to substrate and installs fixing.
Preferably, the cross section of described fixing hole is circular, also can be other shapes of being convenient to process, and circular configuration is simple, and is easy to use.
Preferably, at least one group of optical lens external member is installed also on the described substrate, is convenient to light-resource fousing.
Preferably, described optical lens external member comprises that described optical lens external member comprises lens carrier, is fixed on the lens on the lens carrier, the bottom of described lens is provided with the groove that holds infrared wafer and packaged LED silica gel, the bottom of described lens carrier contacts with upper surface of base plate, lens, lens carrier result of use are good, simple in structure, groove is convenient to the placement of infrared wafer.
Preferably, the both sides of described lens are equipped with fixture block, and described lens carrier is provided with the draw-in groove that matches with fixture block, also can be other syndetons of being convenient to be fixedly connected with, and fixture block is connected with draw-in groove reliably, easy installation and removal, good practical effect.
In sum, advantage of the present utility model: infrared wafer is fixedly connected on the copper foil layer I that substrate is provided with, and the heat that infrared wafer is produced is delivered on the substrate from the copper foil layer I, thereby has improved heat conduction efficiency, improve the stability of COB light source, improved useful life.
Description of drawings
The utility model is described in further detail below in conjunction with accompanying drawing:
Fig. 1 is the structural representation of a kind of infrared COB light source module of the utility model;
Fig. 2 is that infrared wafer is fixed on the structural representation on the substrate;
Fig. 3 is the structural representation of substrate.
Embodiment
Such as Fig. 1, Fig. 2, shown in Figure 3, a kind of infrared COB light source module, comprise substrate 1, at least one group of infrared wafer 2 that is arranged on the substrate 1, the upper surface of described substrate 1 is provided with copper foil layer I 3 and the copper foil layer II 9 that has each other the gap, described copper foil layer I 3 is provided with fixedly pad 31 and the first electrical connection pad 32, described copper foil layer II 9 is provided with electrode welding point 33 and the second electrical connection pad 34, described infrared wafer 2 is fixed on the copper foil layer I 3, one utmost point of described infrared wafer 2 is connected with fixing pad 31, another utmost point of described infrared wafer 2 is connected with electrode welding point 33, one extremely direct and fixedly pad 31 welding of described infrared wafer 2, another utmost point of described infrared wafer 2 is connected with electrode welding point 33 by bonding gold wire 7, be provided with the elargol 6 that infrared wafer 2 and copper foil layer I 3 are fixed between described infrared wafer 2 and the copper foil layer I 3, described infrared wafer 2 is encapsulated on the copper foil layer I 3 by LED silica gel 4, elargol 6 conducts electricity very well, adhesive property is good, bonding gold wire 7 has good electrical conductance and hot press performance, connect reliable, result of use is good, be convenient to the fixing of infrared wafer 2, described fixedly pad 31 is gold-plated or silver-plated pad, be convenient to welding, electric conductivity is all right, contact resistance is low, corrosion resistance is strong, described copper foil layer I 3, copper foil layer II 9 all is fixed on the substrate 1 by insulating cement 5, insulating cement 5 has good electrical insulating property, result of use is good, the longitudinal section of described substrate 1 is that rectangle is square or circular, described substrate 1 is provided with at least two fixing holes 11, also can be other shapes of being convenient to process, simple in structure, result of use is good, being convenient to substrate installs fixing, the cross section of described fixing hole 11 is circular, also can be other shapes of being convenient to process, circular configuration is simple, easy to use, at least one group of optical lens external member 8 also is installed on the described substrate 1, be convenient to light-resource fousing, described optical lens external member 8 comprises lens carrier 82, be fixed on the lens 81 on the lens carrier 82, the bottom of described lens 81 is provided with the groove 85 that holds infrared wafer 2 and packaged LED silica gel 4, the bottom of described lens carrier 82 contacts with substrate 1 upper surface, lens 81, lens carrier 82 results of use are good, simple in structure, groove 85 is convenient to the placement of infrared wafer 2, the both sides of described lens 81 are equipped with fixture block 83, described lens carrier 82 is provided with the draw-in groove 84 that matches with fixture block 83, also can be other syndetons of being convenient to be fixedly connected with, fixture block 83 is connected with draw-in groove 84 reliably, easy installation and removal, good practical effect.
The COB light source module can be installed on the heat dissipation metal structure and use, the upper use of this PCB heat radiation version also can be installed, between two groups, establish gapped copper foil layer I 3 by insulating cement 5, copper foil layer II 9 sticking being posted on the substrate 1, be provided with fixedly pad 31 and the first electrical connection pad 32 on the copper foil layer I 3, copper foil layer II 9 is provided with electrode welding point 33 and the second electrical connection pad 34, copper foil layer I 3 areas that assurance is provided with fixing pad 31 and the first electrical connection pad 32 are large as far as possible, by elargol 6 utmost point of infrared wafer 2 is welded on fixedly on the pad 31, another utmost point of infrared wafer 2 is fixed on the electrode welding point 33 by bonding gold wire 7, and by LED silica gel 4 infrared wafer 2 and bonding gold wire 7 are encapsulated on the copper foil layer I 3, the draw-in groove 84 that scioptics support 82 is provided with cooperates with the fixture block 83 that lens 81 are provided with, lens carrier 82 sticking being posted on are guaranteed also on the substrate 1 that the groove 85 that is arranged on the lens 81 cooperates with infrared wafer 2, by the first electrical connection pad 32 and 34 energisings of the second electrical connection pad, make infrared wafer 2 luminous, the heat of infrared wafer 2 is delivered on the substrate 1 by copper foil layer I 3.
Infrared wafer is fixedly connected on the copper foil layer I that substrate is provided with, and the heat that infrared wafer is produced is delivered on the substrate from the copper foil layer I, thereby has improved heat conduction efficiency, has improved the stability of COB light source, has improved useful life.
Claims (9)
1. one kind infrared COB light source module, comprise substrate (1), at least one group of infrared wafer (2) that is arranged on the substrate (1), it is characterized in that: the upper surface of described substrate (1) is provided with copper foil layer I (3) and the copper foil layer II (9) that has each other the gap, described copper foil layer I (3) is provided with fixedly pad (31) and the first electrical connection pad (32), described copper foil layer II (9) is provided with electrode welding point (33) and the second electrical connection pad (34), described infrared wafer (2) is fixed on the copper foil layer I (3), one utmost point of described infrared wafer (2) is connected with fixing pad (31), and another utmost point of described infrared wafer (2) is connected with electrode welding point (33).
2. a kind of infrared COB light source module according to claim 1, it is characterized in that: extremely direct and fixedly pad (a 31) welding of described infrared wafer (2), another utmost point of described infrared wafer (2) is connected with electrode welding point (33) by bonding gold wire (7), be provided with the elargol (6) that infrared wafer (2) and copper foil layer I (3) is fixing between described infrared wafer (2) and the copper foil layer I (3), described infrared wafer (2) and bonding gold wire (7) are encapsulated on the copper foil layer I (3) by LED silica gel (4).
3. a kind of infrared COB light source module according to claim 1 and 2, it is characterized in that: described fixedly pad (31) is gold-plated or silver-plated pad.
4. a kind of infrared COB light source module according to claim 1, it is characterized in that: described copper foil layer I (3), copper foil layer II (9) all are fixed on the substrate (1) by insulating cement (5).
5. a kind of infrared COB light source module according to claim 1, it is characterized in that: the longitudinal section of described substrate (1) is that rectangle is square or circular, and described substrate (1) is provided with at least two fixing holes (11).
6. a kind of infrared COB light source module according to claim 5 is characterized in that: the cross section of described fixing hole (11) is for circular.
7. a kind of infrared COB light source module according to claim 5 is characterized in that: at least one group of optical lens external member (8) also is installed on the described substrate (1).
8. a kind of infrared COB light source module according to claim 7, it is characterized in that: described optical lens external member (8) comprises lens carrier (82), is fixed on the lens (81) on the lens carrier (82), the bottom of described lens (81) is provided with the groove (85) that holds infrared wafer (2) and packaged LED silica gel (4), and the bottom of described lens carrier (82) contacts with substrate (1) upper surface.
9. a kind of infrared COB light source module according to claim 8, it is characterized in that: the both sides of described lens (81) are equipped with fixture block (83), and described lens carrier (82) is provided with the draw-in groove (84) that matches with fixture block (83).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205057799U CN202839737U (en) | 2012-09-28 | 2012-09-28 | Infrared COB light source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012205057799U CN202839737U (en) | 2012-09-28 | 2012-09-28 | Infrared COB light source module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202839737U true CN202839737U (en) | 2013-03-27 |
Family
ID=47951372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012205057799U Expired - Fee Related CN202839737U (en) | 2012-09-28 | 2012-09-28 | Infrared COB light source module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202839737U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106662702A (en) * | 2014-07-16 | 2017-05-10 | Bsh家用电器有限公司 | Display device and domestic appliance having such display device |
-
2012
- 2012-09-28 CN CN2012205057799U patent/CN202839737U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106662702A (en) * | 2014-07-16 | 2017-05-10 | Bsh家用电器有限公司 | Display device and domestic appliance having such display device |
| CN106662702B (en) * | 2014-07-16 | 2020-04-24 | Bsh家用电器有限公司 | Display device and household appliance having such a display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201187696Y (en) | Flexible circuit board of LED illumination array | |
| CN101198216A (en) | Flexible circuit board of LED illumination array | |
| CN201149869Y (en) | LED encapsulation structure | |
| US9748462B2 (en) | Floating heat sink support with conductive sheets and LED package assembly for LED flip chip package | |
| CN201589092U (en) | LED light source module for generating rectangular light spot | |
| CN202855803U (en) | High heat conduction LED packaging substrate | |
| CN202839737U (en) | Infrared COB light source module | |
| CN203131498U (en) | Light emitting diode (LED) lamp source based on chip on board (COB) substrate | |
| CN202532210U (en) | Heat pipe type LED lamp | |
| CN202067829U (en) | LED support | |
| CN201339833Y (en) | Packaging structure of surface package type light emitting diode lamp | |
| CN203103348U (en) | COB base plate structure-equipped LED lamp source | |
| CN201994339U (en) | Light-emitting diode (LED) support | |
| CN202101047U (en) | High-power LED (light-emitting diode) light source module with excellent heat dissipation performance | |
| CN202712257U (en) | Ceramic base material LED light source module support | |
| CN201611667U (en) | LED lighting unit | |
| CN201985138U (en) | Integrated bypass module for solar power generation | |
| CN201732809U (en) | Encapsulating structure of LED lighting source | |
| CN103438409A (en) | Aluminum heat radiating module of LED (Light Emitting Diode) | |
| CN202719423U (en) | LED (light-emitting diode) light source module | |
| CN201378598Y (en) | Encapsulation structure of high-power light emitting diode with high light emitting rate | |
| CN204029801U (en) | Adopt the integrated module LED light source of Flip-Chip Using | |
| CN204611682U (en) | A kind of straight-through thermally conductive LED heat-radiating substrate | |
| CN215675078U (en) | Combined lamp bead support | |
| CN203521476U (en) | LED packaging structure with high heat conduction performance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130327 Termination date: 20180928 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |