CN104218072A - Surface contact type diode - Google Patents
Surface contact type diode Download PDFInfo
- Publication number
- CN104218072A CN104218072A CN201410521504.8A CN201410521504A CN104218072A CN 104218072 A CN104218072 A CN 104218072A CN 201410521504 A CN201410521504 A CN 201410521504A CN 104218072 A CN104218072 A CN 104218072A
- Authority
- CN
- China
- Prior art keywords
- layer
- alloy
- diode
- sheet metal
- pin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910001245 Sb alloy Inorganic materials 0.000 claims description 5
- 239000002140 antimony alloy Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000956 alloy Substances 0.000 abstract 5
- 229910045601 alloy Inorganic materials 0.000 abstract 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008571 general function Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a surface contact type diode. The surface contact type diode comprises a cathode pin which is in ohmic contact with a metal piece; a base is arranged above the metal piece; a first alloy layer is arranged above the base; an N type area is arranged above the first alloy layer; a second alloy layer is arranged above the N type area; a P-N junction is arranged between the N type area and the second alloy layer; an anode pin is arranged above the second alloy layer. The surface contact type diode is simple in structure, easy to encapsulate, low in manufacturing cost, large in borne rectifier current and response voltage and not easy to strike through.
Description
Technical field
The present invention relates to a kind of semiconductor device, relate in particular to a kind of face contact diode.
Background technology
Diode (Diode), in the middle of electronic component, a kind of device with two electrodes, only allows electric current to be flow through by single direction.Many uses are the functions of its rectification of application.Variable capacitance diode (Varicap Diode) is used for being used as the adjustable condenser of electronic type.
We are referred to as " rectification (Rectifying) " function conventionally the sense of current that most of diode possesses.The most general function of diode be exactly only allow electric current by single direction by (being called forward bias voltage drop), blocking-up (being called reverse bias) oppositely time.Therefore, diode can be thought of as the non-return valve of electronic edition.But in fact diode can't show the so perfectly directivity of Push And Release, but comparatively complicated non-linear electronic characteristic---this is to be determined by the diode technologies of particular type.Diode uses upper a lot of other functions that also have except being used as the mode of switch.
At present, diode manufacturing technology is quite ripe, but still there is complex structure, cost is high, encapsulation is difficult, the problem such as easy breakdown.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of simple in structure, easy encapsulation, cheap for manufacturing cost, and the rectified current, the repercussion voltage that carry are larger, are difficult for breakdown face contact diode.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of face contact diode, comprise negative electrode pin, described negative electrode pin and sheet metal ohmic contact, described sheet metal top is provided with base, described base top is provided with the first alloy-layer, and described the first alloy-layer top is provided with N-type district, and top, described N-type district is provided with the second alloy-layer, between described N-type district and the second alloy-layer, be provided with PN junction, described the second alloy-layer top is provided with anode pin.
Semiconductor diode is a PN junction interface being formed by the first alloy-layer and the second alloy-layer.Both sides at its interface form space charge layer, form built-in field.In the time that applied voltage equals zero, because the concentration difference of PN junction both sides charge carrier causes dissufion current and the drift current that caused by built-in field equates and in electric equilibrium state, described base respectively with the first alloy-layer and the conducting of negative electrode pin, for the output of electric current.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described sheet metal is copper sheet metal, and described copper sheet metal resistor rate is low, conductivity is strong, for collection and the transmission of PN junction rectified current.
Further, described anode pin, negative electrode pin are copper facing metal, and described copper facing metal hardness is large, be conducive to pin support, simultaneously copper facing pin resistivity is low, contributes to reduce the interference to rectified current.
Further, described the second alloy-layer is aluminium alloy layer, and described aluminium alloy layer is P-type material, for building PN junction.
Further, described the first alloy-layer is golden antimony alloy layer, and described golden antimony alloy layer is n type material, for building the transmission of PN junction and charge carrier.
The invention has the beneficial effects as follows: simple in structure, easy encapsulation, cheap for manufacturing cost, the rectified current, the repercussion voltage that carry are larger, are difficult for breakdown.
Brief description of the drawings
Fig. 1 is a kind of face contact diode of the present invention structural representation;
In accompanying drawing, the list of parts of each label representative is as follows: 1, negative electrode pin, 2, sheet metal, 3, base, 4, the first alloy-layer, 5, N-type district, 6, PN junction, 7, the second alloy-layer, 8, anode pin.
Embodiment
Below in conjunction with accompanying drawing, principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of face contact diode, comprise negative electrode pin 1, described negative electrode pin 1 and sheet metal 2 ohmic contact, described sheet metal 2 tops are provided with base 3, and described base 3 tops are provided with the first alloy-layer 4, described the first alloy-layer 4 tops are provided with N-type district 5,5 tops, described N-type district are provided with the second alloy-layer 7, between described N-type district 5 and the second alloy-layer 7, are provided with PN junction 6, and described the second alloy-layer 7 tops are provided with anode pin 8.
Semiconductor diode is PN junction 6 interfaces that formed by the first alloy-layer 4 and the second alloy-layer 7.Both sides at its interface form space charge layer, form built-in field.In the time that applied voltage equals zero, because the concentration difference of PN junction 6 both sides charge carriers causes dissufion current and the drift current that caused by built-in field equates and in electric equilibrium state, described base 3 respectively with the first alloy-layer 4 and 1 conducting of negative electrode pin, for the output of electric current.
Described sheet metal 2 is copper sheet metal, and described copper sheet metal resistor rate is low, conductivity is strong, for collection and the transmission of PN junction 6 rectified currents; Described anode pin 8, negative electrode pin 1 is copper facing metal, and described copper facing metal hardness is large, be conducive to pin support, the pin of copper facing simultaneously resistivity is low, contributes to reduce the interference to rectified current; Described the second alloy-layer 7 is aluminium alloy layer, and described aluminium alloy layer is P-type material, for building PN junction 6; Described the first alloy-layer 4 is golden antimony alloy layer, and described golden antimony alloy layer is n type material, for building the transmission of PN junction 6 and charge carrier.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. a face contact diode, it is characterized in that, comprise negative electrode pin, described negative electrode pin and sheet metal ohmic contact, described sheet metal top is provided with base, and described base top is provided with the first alloy-layer, described the first alloy-layer top is provided with N-type district, top, described N-type district is provided with the second alloy-layer, between described N-type district and the second alloy-layer, is provided with PN junction, and described the second alloy-layer top is provided with anode pin.
2. a kind of face contact diode according to claim 1, is characterized in that, described sheet metal is copper sheet metal.
3. a kind of face contact diode according to claim 1, is characterized in that, described anode pin, negative electrode pin are copper facing metal.
4. a kind of face contact diode according to claim 1, is characterized in that, described the second alloy-layer is aluminium alloy layer.
5. a kind of face contact diode according to claim 1, is characterized in that, described the first alloy-layer is golden antimony alloy layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410521504.8A CN104218072A (en) | 2014-09-30 | 2014-09-30 | Surface contact type diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410521504.8A CN104218072A (en) | 2014-09-30 | 2014-09-30 | Surface contact type diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104218072A true CN104218072A (en) | 2014-12-17 |
Family
ID=52099396
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410521504.8A Pending CN104218072A (en) | 2014-09-30 | 2014-09-30 | Surface contact type diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104218072A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
-
2014
- 2014-09-30 CN CN201410521504.8A patent/CN104218072A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105023954A (en) * | 2015-08-07 | 2015-11-04 | 南通明芯微电子有限公司 | Surface contact rectifying diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20141217 |
|
| WD01 | Invention patent application deemed withdrawn after publication |